JP7040608B2 - 半導体ウェーハの評価方法および半導体ウェーハの製造方法 - Google Patents

半導体ウェーハの評価方法および半導体ウェーハの製造方法 Download PDF

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JP7040608B2
JP7040608B2 JP2020513156A JP2020513156A JP7040608B2 JP 7040608 B2 JP7040608 B2 JP 7040608B2 JP 2020513156 A JP2020513156 A JP 2020513156A JP 2020513156 A JP2020513156 A JP 2020513156A JP 7040608 B2 JP7040608 B2 JP 7040608B2
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semiconductor wafer
value
axis
evaluated
manufacturing
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JPWO2019198458A1 (ja
Inventor
賢史 村上
啓一 高梨
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Sumco Corp
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Sumco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/255—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring radius of curvature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2020513156A 2018-04-13 2019-03-22 半導体ウェーハの評価方法および半導体ウェーハの製造方法 Active JP7040608B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018077370 2018-04-13
JP2018077370 2018-04-13
PCT/JP2019/011954 WO2019198458A1 (ja) 2018-04-13 2019-03-22 半導体ウェーハの評価方法および半導体ウェーハの製造方法

Publications (2)

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JPWO2019198458A1 JPWO2019198458A1 (ja) 2021-05-13
JP7040608B2 true JP7040608B2 (ja) 2022-03-23

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JP2020513156A Active JP7040608B2 (ja) 2018-04-13 2019-03-22 半導体ウェーハの評価方法および半導体ウェーハの製造方法

Country Status (6)

Country Link
JP (1) JP7040608B2 (de)
KR (1) KR102518971B1 (de)
CN (1) CN112020764B (de)
DE (1) DE112019001948T5 (de)
TW (1) TWI695156B (de)
WO (1) WO2019198458A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110993537A (zh) * 2019-12-20 2020-04-10 徐州鑫晶半导体科技有限公司 确定半导体晶圆边缘抛光形状的方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008537316A (ja) 2005-04-19 2008-09-11 株式会社荏原製作所 基板処理装置
JP2012231005A (ja) 2011-04-26 2012-11-22 Shin Etsu Handotai Co Ltd 半導体ウェーハ及びその製造方法
JP2013137295A (ja) 2011-12-02 2013-07-11 Kobe Steel Ltd 貼合基板の回転ズレ量計測装置、貼合基板の回転ズレ量計測方法、及び貼合基板の製造方法
JP2016130738A (ja) 2016-02-12 2016-07-21 株式会社東京精密 ウェーハ形状測定装置及び方法
JP2017503164A (ja) 2013-12-24 2017-01-26 エルジー・シルトロン・インコーポレーテッド ウェハー形状分析方法および装置
JP2016517631A5 (de) 2014-03-11 2017-04-13
WO2018061337A1 (ja) 2016-09-29 2018-04-05 株式会社Sumco シリコンウェーハの評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコンウェーハ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1335420B1 (de) * 2000-11-16 2015-01-07 Shin-Etsu Handotai Co., Ltd. Herstellung, anordnung und methode zur evaluierung der form von halbleiterscheiben und auswahlmethode von halbleiterscheiben
JP3838341B2 (ja) * 2001-09-14 2006-10-25 信越半導体株式会社 ウェーハの形状評価方法及びウェーハ並びにウェーハの選別方法
JP2004022677A (ja) * 2002-06-13 2004-01-22 Shin Etsu Handotai Co Ltd 半導体ウエーハ
JP2007205864A (ja) * 2006-02-01 2007-08-16 Reitetsukusu:Kk 基盤検査装置、及び、基盤検査方法
US8492178B2 (en) * 2007-02-23 2013-07-23 Rudolph Technologies, Inc. Method of monitoring fabrication processing including edge bead removal processing
WO2009054403A1 (ja) * 2007-10-23 2009-04-30 Shibaura Mechatronics Corporation 円盤状基板の検査装置
US9052190B2 (en) * 2013-03-12 2015-06-09 Kla-Tencor Corporation Bright-field differential interference contrast system with scanning beams of round and elliptical cross-sections

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008537316A (ja) 2005-04-19 2008-09-11 株式会社荏原製作所 基板処理装置
JP2012231005A (ja) 2011-04-26 2012-11-22 Shin Etsu Handotai Co Ltd 半導体ウェーハ及びその製造方法
JP2013137295A (ja) 2011-12-02 2013-07-11 Kobe Steel Ltd 貼合基板の回転ズレ量計測装置、貼合基板の回転ズレ量計測方法、及び貼合基板の製造方法
JP2017503164A (ja) 2013-12-24 2017-01-26 エルジー・シルトロン・インコーポレーテッド ウェハー形状分析方法および装置
JP2016517631A5 (de) 2014-03-11 2017-04-13
JP2016130738A (ja) 2016-02-12 2016-07-21 株式会社東京精密 ウェーハ形状測定装置及び方法
WO2018061337A1 (ja) 2016-09-29 2018-04-05 株式会社Sumco シリコンウェーハの評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコンウェーハ

Also Published As

Publication number Publication date
CN112020764B (zh) 2024-02-20
TWI695156B (zh) 2020-06-01
TW202004125A (zh) 2020-01-16
CN112020764A (zh) 2020-12-01
JPWO2019198458A1 (ja) 2021-05-13
WO2019198458A1 (ja) 2019-10-17
DE112019001948T5 (de) 2021-01-21
KR20200140893A (ko) 2020-12-16
KR102518971B1 (ko) 2023-04-05

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