KR102518971B1 - 반도체 웨이퍼의 평가 방법 및 반도체 웨이퍼의 제조 방법 - Google Patents

반도체 웨이퍼의 평가 방법 및 반도체 웨이퍼의 제조 방법 Download PDF

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Publication number
KR102518971B1
KR102518971B1 KR1020207032385A KR20207032385A KR102518971B1 KR 102518971 B1 KR102518971 B1 KR 102518971B1 KR 1020207032385 A KR1020207032385 A KR 1020207032385A KR 20207032385 A KR20207032385 A KR 20207032385A KR 102518971 B1 KR102518971 B1 KR 102518971B1
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KR
South Korea
Prior art keywords
semiconductor wafer
value
manufacturing
axis
evaluation
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KR1020207032385A
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English (en)
Korean (ko)
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KR20200140893A (ko
Inventor
사토시 무라카미
케이이치 다카나시
Original Assignee
가부시키가이샤 사무코
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Publication of KR20200140893A publication Critical patent/KR20200140893A/ko
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Publication of KR102518971B1 publication Critical patent/KR102518971B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/255—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring radius of curvature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020207032385A 2018-04-13 2019-03-22 반도체 웨이퍼의 평가 방법 및 반도체 웨이퍼의 제조 방법 KR102518971B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018077370 2018-04-13
JPJP-P-2018-077370 2018-04-13
PCT/JP2019/011954 WO2019198458A1 (ja) 2018-04-13 2019-03-22 半導体ウェーハの評価方法および半導体ウェーハの製造方法

Publications (2)

Publication Number Publication Date
KR20200140893A KR20200140893A (ko) 2020-12-16
KR102518971B1 true KR102518971B1 (ko) 2023-04-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020207032385A KR102518971B1 (ko) 2018-04-13 2019-03-22 반도체 웨이퍼의 평가 방법 및 반도체 웨이퍼의 제조 방법

Country Status (6)

Country Link
JP (1) JP7040608B2 (de)
KR (1) KR102518971B1 (de)
CN (1) CN112020764B (de)
DE (1) DE112019001948T5 (de)
TW (1) TWI695156B (de)
WO (1) WO2019198458A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110993537A (zh) * 2019-12-20 2020-04-10 徐州鑫晶半导体科技有限公司 确定半导体晶圆边缘抛光形状的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101540569B1 (ko) * 2013-12-24 2015-07-31 주식회사 엘지실트론 웨이퍼의 형상 분석 방법 및 장치
JP2016517631A (ja) * 2013-03-12 2016-06-16 ケーエルエー−テンカー コーポレイション 明視野差分干渉コントラストを用いた強化検査及び計測技法及びシステム
JP2016130738A (ja) * 2016-02-12 2016-07-21 株式会社東京精密 ウェーハ形状測定装置及び方法
WO2018061337A1 (ja) * 2016-09-29 2018-04-05 株式会社Sumco シリコンウェーハの評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコンウェーハ

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Publication number Priority date Publication date Assignee Title
US6828163B2 (en) * 2000-11-16 2004-12-07 Shin-Etsu Handotai Co., Ltd. Wafer shape evaluating method and device producing method, wafer and wafer selecting method
JP3838341B2 (ja) * 2001-09-14 2006-10-25 信越半導体株式会社 ウェーハの形状評価方法及びウェーハ並びにウェーハの選別方法
JP2004022677A (ja) * 2002-06-13 2004-01-22 Shin Etsu Handotai Co Ltd 半導体ウエーハ
CN1977361B (zh) * 2005-04-19 2011-04-27 株式会社荏原制作所 基底处理设备
JP2007205864A (ja) * 2006-02-01 2007-08-16 Reitetsukusu:Kk 基盤検査装置、及び、基盤検査方法
WO2008103994A2 (en) * 2007-02-23 2008-08-28 Rudolph Technologies, Inc. Wafer fabrication monitoring systems and methods, including edge bead removal processing
KR101202883B1 (ko) * 2007-10-23 2012-11-19 시바우라 메카트로닉스 가부시키가이샤 원반형 기판의 검사 장치
JP5621702B2 (ja) * 2011-04-26 2014-11-12 信越半導体株式会社 半導体ウェーハ及びその製造方法
JP5836223B2 (ja) * 2011-12-02 2015-12-24 株式会社神戸製鋼所 貼合基板の回転ズレ量計測装置、貼合基板の回転ズレ量計測方法、及び貼合基板の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016517631A (ja) * 2013-03-12 2016-06-16 ケーエルエー−テンカー コーポレイション 明視野差分干渉コントラストを用いた強化検査及び計測技法及びシステム
KR101540569B1 (ko) * 2013-12-24 2015-07-31 주식회사 엘지실트론 웨이퍼의 형상 분석 방법 및 장치
JP2016130738A (ja) * 2016-02-12 2016-07-21 株式会社東京精密 ウェーハ形状測定装置及び方法
WO2018061337A1 (ja) * 2016-09-29 2018-04-05 株式会社Sumco シリコンウェーハの評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコンウェーハ

Also Published As

Publication number Publication date
TWI695156B (zh) 2020-06-01
DE112019001948T5 (de) 2021-01-21
JP7040608B2 (ja) 2022-03-23
JPWO2019198458A1 (ja) 2021-05-13
WO2019198458A1 (ja) 2019-10-17
TW202004125A (zh) 2020-01-16
CN112020764A (zh) 2020-12-01
KR20200140893A (ko) 2020-12-16
CN112020764B (zh) 2024-02-20

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