CN111968961B - 侧壁互联板及其制作工艺 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 144
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 144
- 239000010703 silicon Substances 0.000 claims abstract description 144
- 238000003466 welding Methods 0.000 claims abstract description 36
- 229910000679 solder Inorganic materials 0.000 claims abstract description 27
- 229910052802 copper Inorganic materials 0.000 claims description 42
- 239000010949 copper Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 40
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 229910052716 thallium Inorganic materials 0.000 claims description 12
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052718 tin Inorganic materials 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 74
- 238000010586 diagram Methods 0.000 description 10
- FPWNLURCHDRMHC-UHFFFAOYSA-N 4-chlorobiphenyl Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1 FPWNLURCHDRMHC-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Abstract
本发明涉及一种侧壁互联板及其制作工艺,在硅片的每个侧面均设有硅片侧面焊盘,在每个硅片侧面焊盘上均设有硅片侧面焊球,在硅片内设有竖直向设置的联接柱,在硅片的正面设有硅片正面焊盘,在硅片背面焊盘上设有硅片背面焊球;芯片包括芯片本体,在芯片本体的背面设有芯片背面焊盘,在芯片背面焊盘上设有芯片背面焊球;堆叠模组固定在PCB板凹槽内,硅片侧面焊球与PCB板侧面焊盘焊接固定,硅片背面焊球与PCB板底面焊盘焊接固定,芯片背面焊球与硅片正面焊盘焊接固定。本发明能减小PCB板的面积,堆叠模组的厚度可调且堆叠模组的侧壁面积可以随着需要增加或者减小。
Description
技术领域
本发明涉及半导体技术领域,具体地说是一种侧壁互联板及其制作工艺。
背景技术
电子半导体行业发展迅速,随着5nm工艺制程的普及,人工智能芯片和微处理器芯片的尺寸越来越小,但是芯片的互联PAD却越来越多,为了使芯片能够跟PCB板做互联,传统的封装方式一般是采用FAN-OUT的方式或者转接板扇出的方式来进行焊接,把密集的PAD通过互联线扇出到面积更大的区域,然后通过BGA焊球或者LGA引脚跟PCB板固定。
但是这种互联工艺只考虑到把芯片的焊脚做了再分布,却没有考虑到BGA或者LGA在PCB板上占的面积却几乎没有变化。而伴随着芯片的尺寸变小,终端同样面临相似的趋势,要么终端直接微型化,或者终端上的芯片更密集,功能更全,这就要求芯片在终端PCB上的焊接面积不能太大,很明显现在的扇出工艺不能解决这个问题。同时因为现有芯片普遍厚度不超过400um,而PCB板可以达到几个毫米的厚度,还有较大可利用空间,因此只是用芯片侧壁做互联,能节省的面积有限。
发明内容
本发明的目的是克服现有技术中存在的不足,提供一种能减小PCB板的面积、堆叠模组的厚度可调且堆叠模组的侧壁面积可以随着需要增加或者减小的侧壁互联板及其制作工艺。
按照本发明提供的技术方案,所述侧壁互联板,它包括堆叠模组、芯片与PCB板;
所述堆叠模组包括硅片,在硅片的每个侧面均设有硅片侧面焊盘,在每个硅片侧面焊盘上均设有硅片侧面焊球,在硅片内设有竖直向设置的联接柱,在硅片的正面设有硅片正面焊盘,在硅片的背面设有硅片背面焊盘,联接柱的上端与硅片正面焊盘相接,联接柱的下端与硅片背面焊盘相接,在硅片背面焊盘上设有硅片背面焊球;
所述芯片包括芯片本体,在芯片本体的背面设有芯片背面焊盘,在芯片背面焊盘上设有芯片背面焊球;
所述PCB板包括PCB板本体,在PCB板本体上开设有PCB板凹槽,在PCB板凹槽的侧壁设有PCB板侧面焊盘,在PCB板凹槽的底面上设有PCB板底面焊盘;
所述堆叠模组固定在PCB板凹槽内,硅片侧面焊球与PCB板侧面焊盘焊接固定,硅片背面焊球与PCB板底面焊盘焊接固定,芯片背面焊球与硅片正面焊盘焊接固定。
上述侧壁互联板的制作工艺包括以下步骤:
1a、通过光刻、刻蚀工艺在硅片的正面制作TSV凹槽;
1b、在硅片的正面形成绝缘层,在绝缘层上方制作种子层;在硅片的正面镀铜,使铜金属充满TSV凹槽,通过铜CMP工艺使硅片的正面的铜金属去除,只剩下TSV凹槽内的铜金属而形成嵌入式的硅片侧面焊盘;
1c、通过光刻、刻蚀工艺在硅片的正面制作TSV深孔,在硅片的正面沉积绝缘层或者直接热氧化形成绝缘层,通过物理溅射、磁控溅射或者蒸镀工艺在绝缘层上方制作种子层;在硅片的正面镀铜,使铜金属充满TSV深孔,通过铜CMP工艺使硅片的正面的铜金属去除,只剩下TSV深孔内的铜金属而形成联接柱,硅片的正面的绝缘层予以保留;
1d、首先在绝缘层上方制作种子层,然后光刻定义RDL和焊盘位置,通过电镀工艺在TSV深孔口露出端制作RDL和焊盘金属,形成硅片正面焊盘;
1e、对硅片的正面做临时键合,然后减薄背面,使TSV露出,在背面做钝化层,抛光使TSV金属露出,然后继续制作RDL和硅片背面焊盘,形成转接板;
1f、拆除临时键合,把多层转接板做晶圆级键合形成整晶圆堆叠模组;
1g、切割整晶圆堆叠模组,得到单个堆叠模组,使嵌入式硅片侧面焊盘露出;
1h、在单个堆叠模组的硅片背面焊盘和硅片侧面焊盘做植球,形成硅片背面焊球与硅片侧面焊球,通过压力把硅片背面焊球与硅片侧面焊球做压扁处理;
1p、把芯片焊接在堆叠模组的正面,使芯片背面焊球与硅片正面焊盘焊接固定;
1r、把带有芯片的堆叠模组焊接在已开槽的PCB板上,使硅片侧面焊球与PCB板侧面焊盘焊接固定、硅片背面焊球与PCB板底面焊盘焊接固定,再经缝隙填充得到最终结构。
作为优选,步骤1a中,所述TSV凹槽的长宽范围在1um到1000um、深度在10um到1000um。
作为优选,步骤1b中,在硅片的正面沉积氧化硅或者氮化硅材质的绝缘层或者直接热氧化形成绝缘层,绝缘层的厚度范围在10nm到100um,通过物理溅射、磁控溅射或者蒸镀工艺在绝缘层上方制作种子层,种子层厚度范围在1nm到100um,种子层是一层或者多层,种子层的材质为钛、铜、铝、银、钯、金、铊、锡或者镍,硅片的正面的绝缘层用干法刻蚀或者湿法腐蚀工艺去除,或者,硅片的正面的绝缘层予以保留。
作为优选,步骤1c中,所述TSV深孔的直径范围在1um到1000um、深度在10um到1000um,在硅片的正面沉积氧化硅或者氮化硅材质的绝缘层或者直接热氧化形成绝缘层,绝缘层的厚度范围在10nm到100um,通过物理溅射、磁控溅射或者蒸镀工艺在绝缘层上方制作种子层,种子层厚度范围在1nm到100um,种子层是一层或者多层,种子层的材质为钛、铜、铝、银、钯、金、铊、锡或者镍。
作为优选,步骤1d中,首先通过物理溅射、磁控溅射或者蒸镀工艺在绝缘层上方制作种子层,种子层厚度范围在1nm到100um,种子层是一层或者多层,种子层的材质是钛、铜、铝、银、钯、金、铊、锡或者镍;
其次光刻定义RDL和焊盘位置,通过电镀工艺在TSV深孔口露出端制作RDL和焊盘金属,焊盘金属厚度范围1um到100um,焊盘金属是一层或者多层,焊盘金属的材质是钛、铜、铝、银、钯、金、铊、锡或者镍。
本发明通过硅材质中间层布线、TSV互联以及侧壁植球技术制作一个侧壁带互联线的堆叠模组,使堆叠模组的正面、背面和侧面都有焊接点,这样芯片跟堆叠模组焊接,堆叠模组再与PCB焊接,就只是占用了PCB板的一部分侧壁,而不会增加对PCB板正面面积的使用,这种方式能减小PCB板的面积;同时堆叠模组厚度可调,其侧壁面积可以随着需要增加或者减小。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍。显而易见地,下面描述中的附图仅仅是本发明中记载的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是经过步骤1a处理后的结构图。
图2是经过步骤1b处理后的结构图。
图3是经过步骤1c处理后的结构图。
图4是经过步骤1d处理后的结构图。
图5是经过步骤1e处理后的结构图。
图6是经过步骤1f处理后的结构图。
图7是经过步骤1g处理后的结构图。
图8是经过步骤1h处理后的结构图。
图9是经过步骤1p处理后的结构图。
图10是经过步骤1r处理后的结构图。
具体实施方式
下面结合具体实施例对本发明作进一步说明。
以下将结合附图所示的具体实施方式对本发明进行详细描述。但这些实施方式并不限制本发明,本领域的普通技术人员根据这些实施方式所做出的结构、方法、或功能上的变换均包含在本发明的保护范围内。
此外,在不同的实施例中可能使用重复的标号或标示。这些重复仅为了简单清楚地叙述本发明,不代表所讨论的不同实施例及/或结构之间具有任何关联性。
一种侧壁互联板,它包括堆叠模组1、芯片2与PCB板3;
所述堆叠模组1包括硅片11,在硅片11的每个侧面均设有硅片侧面焊盘12,在每个硅片侧面焊盘12上均设有硅片侧面焊球13,在硅片11内设有竖直向设置的联接柱14,在硅片11的正面设有硅片正面焊盘15,在硅片11的背面设有硅片背面焊盘16,联接柱14的上端与硅片正面焊盘15相接,联接柱14的下端与硅片背面焊盘16相接,在硅片背面焊盘16上设有硅片背面焊球17;
所述芯片2包括芯片本体21,在芯片本体21的背面设有芯片背面焊盘22,在芯片背面焊盘22上设有芯片背面焊球23;
所述PCB板3包括PCB板本体31,在PCB板本体31上开设有PCB板凹槽,在PCB板凹槽的侧壁设有PCB板侧面焊盘32,在PCB板凹槽的底面上设有PCB板底面焊盘33;
所述堆叠模组1固定在PCB板凹槽内,硅片侧面焊球13与PCB板侧面焊盘32焊接固定,硅片背面焊球17与PCB板底面焊盘33焊接固定,芯片背面焊球23与硅片正面焊盘15焊接固定。
一种侧壁互联板的制作工艺包括以下步骤:
1a、通过光刻、刻蚀工艺在硅片11的正面制作TSV凹槽,TSV凹槽的长宽范围在1um到1000um、深度在10um到1000um;
1b、在硅片11的正面形成绝缘层,在绝缘层上方制作种子层;在硅片11的正面镀铜,使铜金属充满TSV凹槽,通过铜CMP工艺使硅片11的正面的铜金属去除,只剩下TSV凹槽内的铜金属而形成嵌入式的硅片侧面焊盘12;具体的,步骤1b中,在硅片11的正面沉积氧化硅或者氮化硅材质的绝缘层或者直接热氧化形成绝缘层,绝缘层的厚度范围在10nm到100um,通过物理溅射、磁控溅射或者蒸镀工艺在绝缘层上方制作种子层,种子层厚度范围在1nm到100um,种子层是一层或者多层,种子层的材质为钛、铜、铝、银、钯、金、铊、锡或者镍,硅片11的正面的绝缘层用干法刻蚀或者湿法腐蚀工艺去除,或者,硅片11的正面的绝缘层予以保留;
1c、通过光刻、刻蚀工艺在硅片11的正面制作TSV深孔,在硅片11的正面沉积绝缘层或者直接热氧化形成绝缘层,通过物理溅射、磁控溅射或者蒸镀工艺在绝缘层上方制作种子层;在硅片11的正面镀铜,使铜金属充满TSV深孔,通过铜CMP工艺使硅片11的正面的铜金属去除,只剩下TSV深孔内的铜金属而形成联接柱14,硅片11的正面的绝缘层予以保留;具体的,步骤1c中,所述TSV深孔的直径范围在1um到1000um、深度在10um到1000um,在硅片11的正面沉积氧化硅或者氮化硅材质的绝缘层或者直接热氧化形成绝缘层,绝缘层的厚度范围在10nm到100um,通过物理溅射、磁控溅射或者蒸镀工艺在绝缘层上方制作种子层,种子层厚度范围在1nm到100um,种子层是一层或者多层,种子层的材质为钛、铜、铝、银、钯、金、铊、锡或者镍;
1d、首先在绝缘层上方制作种子层,然后光刻定义RDL和焊盘位置,通过电镀工艺在TSV深孔口露出端制作RDL和焊盘金属,形成硅片正面焊盘15;具体的,步骤1d中,首先通过物理溅射、磁控溅射或者蒸镀工艺在绝缘层上方制作种子层,种子层厚度范围在1nm到100um,种子层是一层或者多层,种子层的材质是钛、铜、铝、银、钯、金、铊、锡或者镍;
其次光刻定义RDL和焊盘位置,通过电镀工艺在TSV深孔口露出端制作RDL和焊盘金属,焊盘金属厚度范围1um到100um,焊盘金属是一层或者多层,焊盘金属的材质是钛、铜、铝、银、钯、金、铊、锡或者镍;
1e、对硅片11的正面做临时键合,然后减薄背面,使TSV露出,在背面做钝化层,抛光使TSV金属露出,然后继续制作RDL和硅片背面焊盘16,形成转接板;
1f、拆除临时键合,把多层转接板做晶圆级键合形成整晶圆堆叠模组;
1g、切割整晶圆堆叠模组,得到单个堆叠模组1,使嵌入式硅片侧面焊盘12露出;
1h、在单个堆叠模组1的硅片背面焊盘16和硅片侧面焊盘12做植球,形成硅片背面焊球17与硅片侧面焊球13,通过压力把硅片背面焊球17与硅片侧面焊球13做压扁处理;
1p、把芯片2焊接在堆叠模组1的正面,使芯片背面焊球23与硅片正面焊盘15焊接固定;
1r、把带有芯片2的堆叠模组1焊接在已开槽的PCB板3上,使硅片侧面焊球13与PCB板侧面焊盘32焊接固定、硅片背面焊球17与PCB板底面焊盘33焊接固定,再经缝隙填充得到最终结构。
对本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。因此,无论从哪一点来看,均应将实施例看作是示范性的,而且是非限制性的,本发明的范围由所附权利要求而不是上述说明限定,因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。
此外,应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施例中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。
Claims (6)
1.一种侧壁互联板,其特征是:它包括堆叠模组(1)、芯片(2)与PCB板(3);
所述堆叠模组(1)包括硅片(11),在硅片(11)的每个侧面均设有硅片侧面焊盘(12),在每个硅片侧面焊盘(12)上均设有硅片侧面焊球(13),在硅片(11)内设有竖直向设置的联接柱(14),在硅片(11)的正面设有硅片正面焊盘(15),在硅片(11)的背面设有硅片背面焊盘(16),联接柱(14)的上端与硅片正面焊盘(15)相接,联接柱(14)的下端与硅片背面焊盘(16)相接,在硅片背面焊盘(16)上设有硅片背面焊球(17);
所述芯片(2)包括芯片本体(21),在芯片本体(21)的背面设有芯片背面焊盘(22),在芯片背面焊盘(22)上设有芯片背面焊球(23);
所述PCB板(3)包括PCB板本体(31),在PCB板本体(31)上开设有PCB板凹槽,在PCB板凹槽的侧壁设有PCB板侧面焊盘(32),在PCB板凹槽的底面上设有PCB板底面焊盘(33);
所述堆叠模组(1)固定在PCB板凹槽内,硅片侧面焊球(13)与PCB板侧面焊盘(32)焊接固定,硅片背面焊球(17)与PCB板底面焊盘(33)焊接固定,芯片背面焊球(23)与硅片正面焊盘(15)焊接固定。
2.一种侧壁互联板的制作工艺包括以下步骤:
1a、通过光刻、刻蚀工艺在硅片(11)的正面制作TSV凹槽;
1b、在硅片(11)的正面形成绝缘层,在绝缘层上方制作种子层;在硅片(11)的正面镀铜,使铜金属充满TSV凹槽,通过铜CMP工艺使硅片(11)的正面的铜金属去除,只剩下TSV凹槽内的铜金属而形成嵌入式的硅片侧面焊盘(12);
1c、通过光刻、刻蚀工艺在硅片(11)的正面制作TSV深孔,在硅片(11)的正面沉积绝缘层或者直接热氧化形成绝缘层,通过物理溅射、磁控溅射或者蒸镀工艺在绝缘层上方制作种子层;在硅片(11)的正面镀铜,使铜金属充满TSV深孔,通过铜CMP工艺使硅片(11)的正面的铜金属去除,只剩下TSV深孔内的铜金属而形成联接柱(14),硅片(11)的正面的绝缘层予以保留;
1d、首先在绝缘层上方制作种子层,然后光刻定义RDL和焊盘位置,通过电镀工艺在TSV深孔口露出端制作RDL和焊盘金属,形成硅片正面焊盘(15);
1e、对硅片(11)的正面做临时键合,然后减薄背面,使TSV露出,在背面做钝化层,抛光使TSV金属露出,然后继续制作RDL和硅片背面焊盘(16),形成转接板;
1f、拆除临时键合,把多层转接板做晶圆级键合形成整晶圆堆叠模组;
1g、切割整晶圆堆叠模组,得到单个堆叠模组(1),使嵌入式硅片侧面焊盘(12)露出;
1h、在单个堆叠模组(1)的硅片背面焊盘(16)和硅片侧面焊盘(12)做植球,形成硅片背面焊球(17)与硅片侧面焊球(13),通过压力把硅片背面焊球(17)与硅片侧面焊球(13)做压扁处理;
1p、把芯片(2)焊接在堆叠模组(1)的正面,使芯片背面焊球(23)与硅片正面焊盘(15)焊接固定;
1r、把带有芯片(2)的堆叠模组(1)焊接在已开槽的PCB板(3)上,使硅片侧面焊球(13)与PCB板侧面焊盘(32)焊接固定、硅片背面焊球(17)与PCB板底面焊盘(33)焊接固定,再经缝隙填充得到最终结构。
3.根据权利要求2所述的侧壁互联板的制作工艺,其特征是:步骤1a中,所述TSV凹槽的长宽范围在1um到1000um、深度在10um到1000um。
4.根据权利要求2所述的侧壁互联板的制作工艺,其特征是:步骤1b中,在硅片(11)的正面沉积氧化硅或者氮化硅材质的绝缘层或者直接热氧化形成绝缘层,绝缘层的厚度范围在10nm到100um,通过物理溅射、磁控溅射或者蒸镀工艺在绝缘层上方制作种子层,种子层厚度范围在1nm到100um,种子层是一层或者多层,种子层的材质为钛、铜、铝、银、钯、金、铊、锡或者镍,硅片(11)的正面的绝缘层用干法刻蚀或者湿法腐蚀工艺去除,或者,硅片(11)的正面的绝缘层予以保留。
5.根据权利要求2所述的侧壁互联板的制作工艺,其特征是:步骤1c中,所述TSV深孔的直径范围在1um到1000um、深度在10um到1000um,在硅片(11)的正面沉积氧化硅或者氮化硅材质的绝缘层或者直接热氧化形成绝缘层,绝缘层的厚度范围在10nm到100um,通过物理溅射、磁控溅射或者蒸镀工艺在绝缘层上方制作种子层,种子层厚度范围在1nm到100um,种子层是一层或者多层,种子层的材质为钛、铜、铝、银、钯、金、铊、锡或者镍。
6.根据权利要求2所述的侧壁互联板的制作工艺,其特征是:步骤1d中,首先通过物理溅射、磁控溅射或者蒸镀工艺在绝缘层上方制作种子层,种子层厚度范围在1nm到100um,种子层是一层或者多层,种子层的材质是钛、铜、铝、银、钯、金、铊、锡或者镍;
其次光刻定义RDL和焊盘位置,通过电镀工艺在TSV深孔口露出端制作RDL和焊盘金属,焊盘金属厚度范围1um到100um,焊盘金属是一层或者多层,焊盘金属的材质是钛、铜、铝、银、钯、金、铊、锡或者镍。
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