CN111952203A - 一种指纹识别封装及其形成方法 - Google Patents
一种指纹识别封装及其形成方法 Download PDFInfo
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- CN111952203A CN111952203A CN202010866032.5A CN202010866032A CN111952203A CN 111952203 A CN111952203 A CN 111952203A CN 202010866032 A CN202010866032 A CN 202010866032A CN 111952203 A CN111952203 A CN 111952203A
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 238000004806 packaging method and process Methods 0.000 claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 124
- 239000011241 protective layer Substances 0.000 claims description 44
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 29
- 229910052802 copper Inorganic materials 0.000 claims description 29
- 239000010949 copper Substances 0.000 claims description 29
- 229910000679 solder Inorganic materials 0.000 claims description 25
- 239000003822 epoxy resin Substances 0.000 claims description 12
- 229920000647 polyepoxide Polymers 0.000 claims description 12
- 239000003989 dielectric material Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000945 filler Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 3
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 description 28
- 238000005516 engineering process Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010866032.5A CN111952203B (zh) | 2020-08-25 | 2020-08-25 | 一种指纹识别封装及其形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010866032.5A CN111952203B (zh) | 2020-08-25 | 2020-08-25 | 一种指纹识别封装及其形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111952203A true CN111952203A (zh) | 2020-11-17 |
CN111952203B CN111952203B (zh) | 2022-09-23 |
Family
ID=73366309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010866032.5A Active CN111952203B (zh) | 2020-08-25 | 2020-08-25 | 一种指纹识别封装及其形成方法 |
Country Status (1)
Country | Link |
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CN (1) | CN111952203B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113205007A (zh) * | 2021-04-14 | 2021-08-03 | 济南橘子智能科技有限公司 | 一种生物传感器及其制造方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5668404A (en) * | 1994-06-02 | 1997-09-16 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and production method thereof |
JP2000040774A (ja) * | 1998-07-24 | 2000-02-08 | Kyocera Corp | 半導体装置 |
JP2009105362A (ja) * | 2007-10-03 | 2009-05-14 | Panasonic Corp | 半導体装置とその製造方法および半導体基板 |
CN102386146A (zh) * | 2010-08-25 | 2012-03-21 | 富士通株式会社 | 电子装置 |
JP2012227337A (ja) * | 2011-04-19 | 2012-11-15 | Toyota Motor Corp | 半導体装置 |
CN104485320A (zh) * | 2014-12-30 | 2015-04-01 | 华天科技(西安)有限公司 | 一种有垂直通孔的埋入式传感芯片封装结构及其制备方法 |
CN107146779A (zh) * | 2017-06-30 | 2017-09-08 | 中芯长电半导体(江阴)有限公司 | 指纹识别芯片的封装结构及封装方法 |
CN107611045A (zh) * | 2017-09-29 | 2018-01-19 | 中芯长电半导体(江阴)有限公司 | 一种三维芯片封装结构及其封装方法 |
CN108155160A (zh) * | 2018-01-29 | 2018-06-12 | 中芯长电半导体(江阴)有限公司 | 指纹识别芯片的封装结构及封装方法 |
CN110444535A (zh) * | 2019-07-29 | 2019-11-12 | 上海先方半导体有限公司 | 一种扇出形多芯片封装结构及其制备方法 |
TWI694555B (zh) * | 2019-02-28 | 2020-05-21 | 鴻海精密工業股份有限公司 | 晶片封裝結構及其製作方法 |
-
2020
- 2020-08-25 CN CN202010866032.5A patent/CN111952203B/zh active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5668404A (en) * | 1994-06-02 | 1997-09-16 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and production method thereof |
JP2000040774A (ja) * | 1998-07-24 | 2000-02-08 | Kyocera Corp | 半導体装置 |
JP2009105362A (ja) * | 2007-10-03 | 2009-05-14 | Panasonic Corp | 半導体装置とその製造方法および半導体基板 |
CN102386146A (zh) * | 2010-08-25 | 2012-03-21 | 富士通株式会社 | 电子装置 |
JP2012227337A (ja) * | 2011-04-19 | 2012-11-15 | Toyota Motor Corp | 半導体装置 |
CN104485320A (zh) * | 2014-12-30 | 2015-04-01 | 华天科技(西安)有限公司 | 一种有垂直通孔的埋入式传感芯片封装结构及其制备方法 |
CN107146779A (zh) * | 2017-06-30 | 2017-09-08 | 中芯长电半导体(江阴)有限公司 | 指纹识别芯片的封装结构及封装方法 |
CN107611045A (zh) * | 2017-09-29 | 2018-01-19 | 中芯长电半导体(江阴)有限公司 | 一种三维芯片封装结构及其封装方法 |
CN108155160A (zh) * | 2018-01-29 | 2018-06-12 | 中芯长电半导体(江阴)有限公司 | 指纹识别芯片的封装结构及封装方法 |
TWI694555B (zh) * | 2019-02-28 | 2020-05-21 | 鴻海精密工業股份有限公司 | 晶片封裝結構及其製作方法 |
CN110444535A (zh) * | 2019-07-29 | 2019-11-12 | 上海先方半导体有限公司 | 一种扇出形多芯片封装结构及其制备方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113205007A (zh) * | 2021-04-14 | 2021-08-03 | 济南橘子智能科技有限公司 | 一种生物传感器及其制造方法 |
CN113205007B (zh) * | 2021-04-14 | 2022-11-15 | 深圳市昊岳科技有限公司 | 一种生物传感器及其制造方法 |
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CN111952203B (zh) | 2022-09-23 |
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Effective date of registration: 20220901 Address after: 518000 building 4, left, 33 Dongfang Avenue, Songgang street, Bao'an District, Shenzhen City, Guangdong Province Applicant after: SHENZHEN TIANCHENG LIGHTING Co.,Ltd. Address before: 250000 shop a-108, building 3, Wanxiang xintiansi District, Wangsheren street, Licheng District, Jinan City, Shandong Province Applicant before: Shandong Yanding Electronic Technology Co.,Ltd. |
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Address after: 518000, 1st floor, Building 4, No. 263 Changfeng Road, Fenghuang Community, Fenghuang Street, Guangming District, Shenzhen, Guangdong Province Patentee after: Tiancheng High tech (Shenzhen) Co.,Ltd. Country or region after: China Address before: 518000 building 4, left, 33 Dongfang Avenue, Songgang street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN TIANCHENG LIGHTING Co.,Ltd. Country or region before: China |
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