CN111785705A - 电子部件模块及其制造方法 - Google Patents

电子部件模块及其制造方法 Download PDF

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CN111785705A
CN111785705A CN202010781491.3A CN202010781491A CN111785705A CN 111785705 A CN111785705 A CN 111785705A CN 202010781491 A CN202010781491 A CN 202010781491A CN 111785705 A CN111785705 A CN 111785705A
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electronic component
component module
mounting substrate
conductive film
mask tape
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折笠诚
堀川雄平
阿部寿之
上林义广
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TDK Corp
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Abstract

本说明书中公开的电子部件模块具备电子部件、密封所述电子部件的密封树脂、覆盖所述密封树脂的表面的导电膜、覆盖所述导电膜的表面的保护膜。所述保护膜包含低反射层和保护层。所述低反射层不与导电膜相接。

Description

电子部件模块及其制造方法
本申请是申请日为2017年10月25日、申请号为201711008406.4、发明名称为电子 部件模块及其制造方法的专利申请的分案申请。
技术领域
本发明涉及电子部件模块及其制造方法。
背景技术
作为以防止从内置于电子部件模块等的电子部件产生的电磁波噪声的泄漏，并且阻止从周边环境产生的电磁波噪声的侵入为目的，进行着通过由金属膜构成的电磁波屏蔽覆盖电子部件的周围的研究。近年来，随着电子部件的小型化及高性能化的要求，在电磁波屏蔽上也要求小型化及高性能化。
公开有通过在电子部件模块的表面直接形成金属膜而减少空间的技术。
例如，日本特开2012－151326号公报中描述的电子部件的屏蔽方法具有通过含有填料的密封树脂密封安装于基板的半导体装置的工序、刮削密封树脂的表面使填料的一部分露出的工序、通过对露出的填料进行蚀刻而在密封树脂的表面形成孔的工序、在包含孔的内面的密封树脂的表面形成金属膜的工序。根据该屏蔽方法，金属膜的锚定效应提高，金属膜在密封树脂的表面的紧密附着性提高。另外，由于在密封树脂的表面直接形成成为电磁屏蔽层的金属膜，所以与通过金属板包围元件整体的情况相比，能够使包含电磁屏蔽的电子部件模块整体小型化。
但是，在电子部件模块的表面形成金属膜时光的反射率增高，在进行通过图像识别的位置检测时，因晕影图像识别装置不能正确识别电子部件模块，往往位置检测的精度降低。
为了提高图像识别的精度，优选金属膜的反射率低。作为使金属膜的反射率降低的方法，列举进行金属膜的粗化处理(黑化处理)的方法，但进行金属膜的粗化处理(黑化处理)时，金属膜从侧面被蚀刻，由金属膜构成的屏蔽可能会剥离。
发明内容
因此，本发明的目的之一，提供一种具备紧密附着性高且光的反射率低的导电膜的电子部件模块。
为了解决上述课题，本发明人们等进行了深入研究，结果是，本发明人们发明一种电子部件模块，其特征在于，具备电子部件、密封所述电子部件的密封树脂、覆盖所述密封树脂的表面的导电膜、覆盖所述导电膜的表面的保护膜，所述保护膜分为低反射区域和导电区域，所述低反射区域不与导电膜相接。
根据本发明，能够提供一种具备紧密附着性高且光的反射率低的导电膜的电子部件模块。
附图说明
图1是表示本发明优选的第一实施方式的电子部件模块的构造的简略剖视图。
图2是图1所示的电子部件模块的局部放大图。
图3A及图3B是用于说明保护层和低反射层的边界线的示意图。
图4A～图4D、图5A～图5C是用于说明图1所示的电子部件模块的制造方法的流程图。
图6是表示本发明优选的第二实施方式的电子部件模块的构造的简略剖视图。
图7是图6所示的电子部件模块的局部放大图。
图8A～图8C是用于说明比较例2～4的样品的制造方法的流程图。
图9是表示实施例1～5及比较例1～4的评价结果的表。
具体实施方式
以下，参照附图并对本发明优选的实施方式详细进行说明。
图1是表示本发明优选的第一实施方式的电子部件模块1的构造的简略剖视图。另外，图2是电子部件模块1的局部放大图。
如图1及图2所示，电子部件模块1具备安装基板10、安装于安装基板10上的电子部件11、密封电子部件11的密封树脂(模塑树脂)12、覆盖密封树脂12的露出面的导电膜13、覆盖导电膜13的保护膜14。
安装基板10是在绝缘基板的表面及背面分别形成有配线图案10a、10b的印刷线路基板。作为绝缘基板，例如能够使用FR4(阻燃型4，Flame Retardant Type 4)等玻璃环氧树脂板，但也可以使用氧化铝或SiC、氮化铝等陶瓷基板，没有特别限定。安装基板10具有贯通绝缘基板而连接配线图案10a和配线图案10b的通孔导体10c。安装基板10的背面的配线图案10b经由通孔导体10c及接合线16与电子部件11的焊盘电极11a电连接。
电子部件11的代表例是半导体IC芯片，通过焊接安装在安装基板10上。电子部件11的焊盘电极11a经由接合线16与配线图案10a连接。电子部件11也可以是片式电容器、片式电感等分立元件。另外，将多个电子部件11搭载于安装基板10也没关系。
密封树脂12是起到保护电子部件11不受外部应力、湿气、污染物质等影响的作用的物质。作为密封树脂12的材料，能够使用环氧树脂。密封树脂12中包含由氧化物粒子构成的填料(充填剂)，由此，实现热膨胀系数的降低、热传导度的提高等。
导电膜13起到遮蔽入射到电子部件11内的电磁场噪声或从电子部件11辐射的电磁场噪声的作为电磁波屏蔽的作用。导电膜13覆盖密封树脂12的表面。在此，密封树脂12的表面是指未形成导电膜13的状态的密封树脂12的露出面，即位于电子部件11的安装面(安装基板10的上表面)的相反侧的密封树脂12的上表面12a、和与安装面正交的密封树脂12的四个侧面12b的面。导电膜13因形成于密封树脂12的露出面整体、即不仅形成于密封树脂12的上表面12a，还形成于侧面12b，所以能够提高屏蔽效果。进而，导电膜13也形成于安装基板10的侧面。
作为导电膜13的材料，优选Cu(铜)。Cu的导电率高，在加工性及成本方面也有利，因此，作为电磁波屏蔽的材料适合。
导电膜13也可以是以Cu为主成分的合金膜，该情况下，优选合金膜还包含选自Ni、Co、Fe的至少一种金属。以Cu为主成分的金属膜还包含这些金属的至少一种的情况下，能够降低导电膜13的应力。
保护膜14具有将保护层14a和低反射层14b按顺序层叠的二层构造。低反射层14b是光的反射率比导电膜13低的层，优选光的反射率小于20％。因此，可抑制晕影，能够提高图像识别性。低反射层14b能够通过利用镀敷法或蚀刻法形成粗的表面或使平滑的表面变粗糙来制作。
在此，在通过使保护膜14的表面变粗糙而形成低反射层14b的情况下，如图3A所示，将连结形成于保护膜14的表面的凹部的线L定义为保护层14a和低反射层14b的边界。边界未达到导电膜13。即，低反射层14b和导电膜13不直接相接，在低反射层14b和导电膜13之间必须介有保护层14a。与之相对，如作为比较例的图3B所示，当表示边界的线L达到导电膜13时，低反射层14b和导电膜13相接，产生了在低反射层14b和导电膜13之间不介有保护层14a的部分。
作为保护层14a的材料，优选Ni。Ni耐腐蚀性高，具有抑制导电膜的腐蚀的效果。
保护层14a也可以是以Ni为主成分的合金膜，该情况下，优选含有P(磷)，优选P的浓度为2～19原子％。如果将P的浓度设定在该范围内，能够得到高的耐腐蚀性、耐磨损性。
图4A～图4D、图5A～图5C是用于说明电子部件模块1的制造方法的流程图。如图4A所示，在电子部件模块1的制造时，首先，准备在安装基板10上安装电子部件11并通过含有填料的密封树脂12密封电子部件11的作为中间制品的电子部件模块1a(步骤1)。
接着，如图4B所示，在构成电子部件模块的安装基板10的背面贴附掩模带31，利用掩模带31覆盖形成于安装基板10的背面的配线图案10b(步骤2)。掩模带31的平面尺寸比安装基板10的平面尺寸大，因此，通过掩模带31覆盖安装基板10的背面的整个面。
接着，如图4C所示，在密封树脂12的表面形成以Cu为主成分的导电膜13(步骤3)。
接着，如图4D所示，剥离掩模带31后，利用另外的掩模带32覆盖形成于安装基板10的背面的配线图案10b(步骤4)。此时，其他的掩模带32使用尺寸比最初的掩模带31小的掩模带，以使导电膜13的端面、即导电膜13和最初的掩模带31的接触面露出。掩模带32的平面尺寸也可以与安装基板10的平面尺寸相同。该情况下，通过掩模带32覆盖安装基板10的背面的整个面。
接着，如图5A所示，在导电膜13的表面形成以Ni为主成分的保护膜14(步骤5)。
导电膜13及保护膜14的形成方法没有特别限定，也可以通过非电解镀敷法或溅射法、印刷法等进行。
接着，如图5B所示，对保护膜14进行黑化处理，使保护膜14的表面变成低反射层14b(步骤6)。保护膜14中未变成低反射层14b的剩余的部分成为保护层14a。
黑化处理可以通过非电解镀敷法或蚀刻法等进行。通过非电解镀敷形成低反射层14b的理由是因为非电解镀敷引起的析出物堆积在保护膜14的表面，在保护膜14的表面形成凹凸。为了抑制晕影，优选低反射层14b的表面粗糙。
接着，如图5C所示，剥离掩模带(步骤7)。
如上，完成具有利用导电膜13覆盖密封树脂12的表面的构造的电子部件模块1。这样，在本实施方式的电子部件模块的制造方法中，在用平面尺寸大的掩模带31覆盖的状态下形成导电膜13后，剥离掩模带31，在利用平面尺寸小的其它的掩模带32覆盖的状态下，形成保护膜14，因此，能够利用保护膜14完全覆盖导电膜13的端面。
图6是表示本发明优选的第二实施方式的电子部件模块2的构造的略剖视图。另外，图7是电子部件模块2的局部放大图。
如图6及图7所示，电子部件模块2在导电膜13、保护层14a及低反射层14b的一部分迂回到安装基板10的背面这一点与上述的电子部件模块1不同。其它的结构与上述的电子部件模块1相同，因此在相同的要素标注相同的符号，重复的说明省略。根据本实施方式的电子部件模块2，因导电膜13的紧密附着性更高，所以导电膜13的剥落更难以产生。此外，形成于安装基板10的背面的保护层14a的端面也可以不由低反射层14b覆盖而露出。
本实施方式的电子部件模块2能够通过使图4D所示的掩模带32的宽度比安装基板的宽度短而制作。
以上，对本发明优选的实施方式进行了说明，但本发明不限定于上述的实施方式，在不脱离本发明的主旨的范围内可进行各种变更，不言而喻，这些也包含于本发明的范围内。
实施例
·实施例1～5
实际制作具有与图1所示的电子部件模块1相同的构造的实施例1～4的样品、具有与图6所示的电子部件模块2相同的构造的实施例5的样品。
首先，准备在安装基板上安装电子部件并通过含有由二氧化硅构成的填料的密封树脂(塑型树脂)密封电子部件的作为中间制品的电子部件模块的样品(参照图4A)。作为安装基板，使用了FR4(阻燃型4，Flame Retardant Type 4)树脂印刷线路基板。
接着，在安装基板的底面粘贴掩模带，覆盖安装基板的底面整体(参照图4B)。接着，通过非电解镀敷法形成导电膜(参照图4C)。在非电解镀敷工序中，首先，将电子部件模块浸渍在包含Sn和Pd的胶质的水溶液5分钟后，利用纯水进行清洗，之后，在非电解镀Cu液中浸渍50分钟后，用纯水进行清洗，得到厚度2.0μm的Cu膜。
接着，剥下掩模带，以先制作成的Cu膜的端面露出的方式再次粘贴掩模带，覆盖配线图案(参照图4D)。此时，对于实施例1～4的样品，使用具有与安装基板相同的平面尺寸的掩模带。另一方面，对于实施例5的样品，使用平面尺寸比安装基板小的掩模带，由此，使安装基板的背面的最外周部分露出，只覆盖被最外周部分包围的中心部分。
接着，在包含Pd离子的水溶液中浸渍5分钟，用纯水进行清洗后，在非电解镀Ni液中浸渍10分钟，用纯水进行清洗，得到2.0μm的Ni膜(参照图5A)。在实施例5的样品中，因掩模带的平面尺寸比安装基板小，所以在安装基板的背面的最外周部分也形成有Ni膜。
接着，通过浸渍在过硫酸钠10％水溶液中，对非电解镀Ni进行黑化处理(参照图5B)。由此，将非电解镀Ni的表面变成低反射层。通过改变黑化处理的时间，制作实施例1～5的样品。最后，剥离掩模带(参照图5C)。
·比较例1
除省略通过黑化处理形成低反射层之外，以与实施例1同样的顺序制作比较例1的样品。
·比较例2、3、4
实际制作具有与图3B所示的电子部件模块相同的构造的比较例2～4的样品。
首先，准备在安装基板上安装电子部件并通过包含由二氧化硅构成的填料的密封树脂(模塑树脂)密封电子部件的、作为中间制品的电子部件模块的样品(参照图4A)。作为安装基板，使用了FR4(Flame Retardant Type4)树脂印刷线路基板。
接着，在安装基板的底面粘贴掩模带，覆盖安装基板的底面整体(参照图4B)。接着，通过非电解镀敷法形成导电膜(参照图4C)。在非电解镀敷工序中，首先，将电子部件模块浸渍在包含Sn和Pd的胶质的水溶液中5分钟后，用纯水进行清洗后，在非电解镀Cu液中浸渍50分钟后，用纯水进行清洗，得到厚度2.0μm的Cu膜。接着，依然贴附掩模带，在含有Pd离子的水溶液中浸渍5分钟，用纯水进行清洗后，在非电解镀Ni液浸渍10分钟，用纯水进行清洗，得到2.0μm的Ni膜(参照图8A)。
接着，通过在10％过硫酸钠水溶液中浸渍，对非电解镀Ni进行黑化处理(参照图8B)。由此，非电解镀Ni的表面变成低反射层。通过改变黑化处理的时间，制作成比较例2～4的样品。最后，剥离掩模带(参照图8C)。
对于以上的电子部件模块的实施例1～5、比较例1～4，进行图像解析及带剥离试验。就可见光反射率而言，使用Spectrophotometer CM-5(柯尼卡美能达制)，在360nm至740nm的波长域测定反射光，评价平均值。低反射层进行剖面抛光，评价保护层和低反射层的边界。在不能看到边界线的情况，通过连结剖面的凹部的底的外侧(低反射区域)和内侧(保护层区域)定义边界(参照图3A、3B所示的虚线L)，评价低反射层的凹部的底是否达到导电层。分别用1个样品在相同部位反复10次进行图像解析，将检测位置相对于实际的样品的侧面位置的偏差为10μm以下的情况视为◎，将20μm以下的情况视为○，将偏差最大50μm以上的情况视为×。
将胶带牢固地粘贴于样品的底面，其约3分钟后超过0.5～1.0秒以接近于60°的角度进行胶带的剥离，评价紧密附着性。
胶带剥离后，通过目视确认表面状态，通过以下的五阶段评价金属膜相对于密封树脂的紧密附着性(剥落状态)。
在此，5阶段评价的情况：
(1)为具有小范围的剥落的情况(剥落率为5％以下)，
(2)为剥落为5～15％左右的情况，
(3)为局部或全面性大范围剥落，和/或局部或全面性剥落的情况(剥落15～35％左右)，
(4)为局部或全面性大范围剥落，和/或局部或全面性剥落的情况(剥落35％以上)，
(5)为剥落比(4)更大的情况。
(1)、(2)是金属膜的紧密附着性良好，(3)、(4)、(5)是金属膜的紧密附着性不良。
将结果示于图9。如图9所示，比较例1的样品，导电膜的紧密附着性好，但反射率高，通过图像识别时具有超过20μm的偏差。比较例2～4的样品，反射率低但紧密附着性差。实施例1～4的样品，图像识别性好，紧密附着性也好。特别是实施例5的样品，图像识别性好，紧密附着性更好。

Claims (7)

1.一种电子部件模块的制造方法，其特征在于，
包括：
由第一掩模带覆盖在表面形成有电子部件及覆盖所述电子部件的密封树脂的安装基板的背面的工序；
在由所述第一掩模带覆盖所述安装基板的所述背面的状态下，在所述密封树脂的表面及所述安装基板的侧面形成导电膜的工序；
在形成所述导电膜后剥下所述第一掩模带的工序；
由比所述第一掩模带小的第二掩模带覆盖所述安装基板的背面的工序；
在由所述第二掩模带覆盖所述安装基板的所述背面的状态下，在所述导电膜上形成保护膜的工序；及
将所述保护膜的表面加工成低反射层的工序，所述低反射层的光的反射率比所述导电膜的光的反射率低。
2.根据权利要求1所述的电子部件模块的制造方法，其特征在于，
加工成所述低反射层的工序通过对所述保护膜的所述表面进行蚀刻而进行。
3.根据权利要求1所述的电子部件模块的制造方法，其特征在于，
加工成所述低反射层的工序通过在所述保护膜的所述表面实施非电解镀敷而进行。
4.根据权利要求1所述的电子部件模块的制造方法，其特征在于，
所述第一掩模带覆盖所述安装基板的所述背面的整个面。
5.根据权利要求4所述的电子部件模块的制造方法，其特征在于，
所述第二掩模带不覆盖所述导电膜的端部而覆盖所述安装基板的所述背面。
6.根据权利要求5所述的电子部件模块的制造方法，其特征在于，
所述第二掩模带覆盖所述安装基板的所述背面的整个面。
7.根据权利要求5所述的电子部件模块的制造方法，其特征在于，
所述安装基板的所述背面包含最外周部分和被所述最外周部分包围的中心部分，
所述第二掩模带不覆盖所述最外周部分而覆盖所述中心部分。
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