CN111748779B - 分割溅射靶及其制造方法 - Google Patents

分割溅射靶及其制造方法 Download PDF

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Publication number
CN111748779B
CN111748779B CN201911394975.6A CN201911394975A CN111748779B CN 111748779 B CN111748779 B CN 111748779B CN 201911394975 A CN201911394975 A CN 201911394975A CN 111748779 B CN111748779 B CN 111748779B
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CN
China
Prior art keywords
sputtering target
shielding material
backing plate
target member
plan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201911394975.6A
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English (en)
Chinese (zh)
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CN111748779A (zh
Inventor
梶山纯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by JX Nippon Mining and Metals Corp filed Critical JX Nippon Mining and Metals Corp
Publication of CN111748779A publication Critical patent/CN111748779A/zh
Application granted granted Critical
Publication of CN111748779B publication Critical patent/CN111748779B/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
CN201911394975.6A 2019-03-27 2019-12-30 分割溅射靶及其制造方法 Active CN111748779B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019061706A JP7311290B2 (ja) 2019-03-27 2019-03-27 分割スパッタリングターゲット及びその製造方法
JP2019-061706 2019-03-27

Publications (2)

Publication Number Publication Date
CN111748779A CN111748779A (zh) 2020-10-09
CN111748779B true CN111748779B (zh) 2022-10-14

Family

ID=72642092

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911394975.6A Active CN111748779B (zh) 2019-03-27 2019-12-30 分割溅射靶及其制造方法

Country Status (4)

Country Link
JP (1) JP7311290B2 (ja)
KR (1) KR102302468B1 (ja)
CN (1) CN111748779B (ja)
TW (1) TWI741477B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112021004413B4 (de) 2020-09-23 2024-06-13 Rohm Co. Ltd. Halbleitervorrichtung, Halbleitermodul, Motoransteuerungsvorrichtung und Fahrzeug
US11823878B2 (en) * 2021-08-30 2023-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition apparatus, deposition target structure, and method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10502707A (ja) * 1995-01-25 1998-03-10 アプライド コマツ テクノロジー株式会社 スパッタリングターゲット組立体のオートクレーブボンディング
CN101542696A (zh) * 2006-11-30 2009-09-23 株式会社神户制钢所 显示装置用Al合金膜、显示装置以及溅射靶材
JP2009249721A (ja) * 2008-04-10 2009-10-29 Mitsui Mining & Smelting Co Ltd スパッタリングターゲット
CN104379802A (zh) * 2012-07-20 2015-02-25 株式会社钢臂功科研 靶组装体
CN105908137A (zh) * 2015-02-24 2016-08-31 Ｊｘ金属株式会社 溅射靶

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5711172B2 (ja) 1973-12-11 1982-03-03
JP3759673B2 (ja) * 1998-01-12 2006-03-29 三井金属鉱業株式会社 スパッタリングターゲットおよびその製造方法
WO2012063523A1 (ja) 2010-11-08 2012-05-18 三井金属鉱業株式会社 分割スパッタリングターゲット及びその製造方法
WO2012063524A1 (ja) 2010-11-08 2012-05-18 三井金属鉱業株式会社 分割スパッタリングターゲット及びその製造方法
KR20120130518A (ko) * 2011-05-23 2012-12-03 삼성디스플레이 주식회사 스퍼터링용 분할 타겟 장치 및 그것을 이용한 스퍼터링 방법
KR20140036765A (ko) * 2012-09-18 2014-03-26 삼성디스플레이 주식회사 스퍼터링 장치
JP6079228B2 (ja) 2012-12-28 2017-02-15 東ソー株式会社 多分割スパッタリングターゲットおよびその製造方法
KR102450392B1 (ko) * 2015-11-26 2022-10-04 삼성디스플레이 주식회사 스퍼터링 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10502707A (ja) * 1995-01-25 1998-03-10 アプライド コマツ テクノロジー株式会社 スパッタリングターゲット組立体のオートクレーブボンディング
CN101542696A (zh) * 2006-11-30 2009-09-23 株式会社神户制钢所 显示装置用Al合金膜、显示装置以及溅射靶材
JP2009249721A (ja) * 2008-04-10 2009-10-29 Mitsui Mining & Smelting Co Ltd スパッタリングターゲット
CN104379802A (zh) * 2012-07-20 2015-02-25 株式会社钢臂功科研 靶组装体
CN105908137A (zh) * 2015-02-24 2016-08-31 Ｊｘ金属株式会社 溅射靶

Also Published As

Publication number Publication date
KR102302468B1 (ko) 2021-09-16
CN111748779A (zh) 2020-10-09
TW202035748A (zh) 2020-10-01
KR20200115039A (ko) 2020-10-07
JP2020158854A (ja) 2020-10-01
TWI741477B (zh) 2021-10-01
JP7311290B2 (ja) 2023-07-19

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