CN1116703C - 用于改善静电击穿电压的半导体器件的输入保护电路 - Google Patents

用于改善静电击穿电压的半导体器件的输入保护电路 Download PDF

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Publication number
CN1116703C
CN1116703C CN96110768A CN96110768A CN1116703C CN 1116703 C CN1116703 C CN 1116703C CN 96110768 A CN96110768 A CN 96110768A CN 96110768 A CN96110768 A CN 96110768A CN 1116703 C CN1116703 C CN 1116703C
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CN
China
Prior art keywords
diffusion layer
input signal
input
signal contact
protection device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN96110768A
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English (en)
Chinese (zh)
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CN1147152A (zh
Inventor
三木淳范
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NEC Corp
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NEC Corp
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Publication of CN1147152A publication Critical patent/CN1147152A/zh
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Publication of CN1116703C publication Critical patent/CN1116703C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
CN96110768A 1995-06-22 1996-06-22 用于改善静电击穿电压的半导体器件的输入保护电路 Expired - Fee Related CN1116703C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP155821/95 1995-06-22
JP155821/1995 1995-06-22
JP7155821A JP2638571B2 (ja) 1995-06-22 1995-06-22 半導体装置の入力保護装置

Publications (2)

Publication Number Publication Date
CN1147152A CN1147152A (zh) 1997-04-09
CN1116703C true CN1116703C (zh) 2003-07-30

Family

ID=15614230

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96110768A Expired - Fee Related CN1116703C (zh) 1995-06-22 1996-06-22 用于改善静电击穿电压的半导体器件的输入保护电路

Country Status (5)

Country Link
US (1) US5895958A (enExample)
JP (1) JP2638571B2 (enExample)
KR (1) KR100210554B1 (enExample)
CN (1) CN1116703C (enExample)
TW (1) TW322631B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218704B1 (en) * 1997-05-07 2001-04-17 International Business Machines Corporation ESD protection structure and method
JP4376348B2 (ja) * 1998-05-18 2009-12-02 パナソニック株式会社 半導体装置
US6355508B1 (en) * 1998-09-02 2002-03-12 Micron Technology, Inc. Method for forming electrostatic discharge protection device having a graded junction
KR20000018511A (ko) * 1998-09-02 2000-04-06 김영환 바이어스 전압 발생기의 레이 아웃방법
US5960290A (en) * 1998-10-29 1999-09-28 United Microelectronics Corp. Method for fabricating a protection circuit of electrostatic discharge on a field device
US6114194A (en) * 1998-11-17 2000-09-05 United Microelectronics Corp. Method for fabricating a field device transistor
US6285062B1 (en) * 1999-05-12 2001-09-04 Micron Technology, Inc. Adjustable high-trigger-voltage electrostatic discharge protection device
DE19934413A1 (de) * 1999-07-22 2001-01-25 Siemens Ag Vorrichtung zum Einbringen eines Zuschlagstoffes in ein Abgas
US6396107B1 (en) 2000-11-20 2002-05-28 International Business Machines Corporation Trench-defined silicon germanium ESD diode network
CN100388481C (zh) * 2003-12-24 2008-05-14 上海华虹Nec电子有限公司 集成电路芯片结构
FR2918504B1 (fr) * 2007-07-06 2009-11-27 St Microelectronics Sa Resistance integree diffusee
CN101819993B (zh) * 2010-04-13 2011-07-06 东南大学 降低热载流子效应的p型横向绝缘栅双极型器件
JP2013172085A (ja) * 2012-02-22 2013-09-02 Asahi Kasei Electronics Co Ltd 半導体装置の製造方法及び半導体装置
JP6664261B2 (ja) * 2016-04-07 2020-03-13 キヤノン株式会社 半導体装置及び液体吐出ヘッド用基板
CN109712972B (zh) * 2017-10-26 2024-06-04 上海维安电子股份有限公司 一种过压保护芯片的版图结构

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4602267A (en) * 1981-02-17 1986-07-22 Fujitsu Limited Protection element for semiconductor device
JPH03120751A (ja) * 1989-10-03 1991-05-22 Sharp Corp 半導体素子の静電保護装置

Also Published As

Publication number Publication date
KR970003928A (ko) 1997-01-29
CN1147152A (zh) 1997-04-09
JPH098232A (ja) 1997-01-10
KR100210554B1 (ko) 1999-07-15
TW322631B (enExample) 1997-12-11
US5895958A (en) 1999-04-20
JP2638571B2 (ja) 1997-08-06

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: NEC ELECTRONICS TAIWAN LTD.

Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD.

Effective date: 20031107

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20031107

Address after: Kawasaki, Kanagawa, Japan

Patentee after: NEC Corp.

Address before: Tokyo, Japan

Patentee before: NEC Corp.

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20030730