TW322631B - - Google Patents

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Publication number
TW322631B
TW322631B TW085107497A TW85107497A TW322631B TW 322631 B TW322631 B TW 322631B TW 085107497 A TW085107497 A TW 085107497A TW 85107497 A TW85107497 A TW 85107497A TW 322631 B TW322631 B TW 322631B
Authority
TW
Taiwan
Prior art keywords
diffusion layer
input signal
input
protection
bipolar
Prior art date
Application number
TW085107497A
Other languages
English (en)
Chinese (zh)
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW322631B publication Critical patent/TW322631B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
TW085107497A 1995-06-22 1996-06-22 TW322631B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7155821A JP2638571B2 (ja) 1995-06-22 1995-06-22 半導体装置の入力保護装置

Publications (1)

Publication Number Publication Date
TW322631B true TW322631B (enExample) 1997-12-11

Family

ID=15614230

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085107497A TW322631B (enExample) 1995-06-22 1996-06-22

Country Status (5)

Country Link
US (1) US5895958A (enExample)
JP (1) JP2638571B2 (enExample)
KR (1) KR100210554B1 (enExample)
CN (1) CN1116703C (enExample)
TW (1) TW322631B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218704B1 (en) * 1997-05-07 2001-04-17 International Business Machines Corporation ESD protection structure and method
JP4376348B2 (ja) * 1998-05-18 2009-12-02 パナソニック株式会社 半導体装置
US6355508B1 (en) * 1998-09-02 2002-03-12 Micron Technology, Inc. Method for forming electrostatic discharge protection device having a graded junction
KR20000018511A (ko) * 1998-09-02 2000-04-06 김영환 바이어스 전압 발생기의 레이 아웃방법
US5960290A (en) * 1998-10-29 1999-09-28 United Microelectronics Corp. Method for fabricating a protection circuit of electrostatic discharge on a field device
US6114194A (en) * 1998-11-17 2000-09-05 United Microelectronics Corp. Method for fabricating a field device transistor
US6285062B1 (en) * 1999-05-12 2001-09-04 Micron Technology, Inc. Adjustable high-trigger-voltage electrostatic discharge protection device
DE19934413A1 (de) * 1999-07-22 2001-01-25 Siemens Ag Vorrichtung zum Einbringen eines Zuschlagstoffes in ein Abgas
US6396107B1 (en) 2000-11-20 2002-05-28 International Business Machines Corporation Trench-defined silicon germanium ESD diode network
CN100388481C (zh) * 2003-12-24 2008-05-14 上海华虹Nec电子有限公司 集成电路芯片结构
FR2918504B1 (fr) * 2007-07-06 2009-11-27 St Microelectronics Sa Resistance integree diffusee
CN101819993B (zh) * 2010-04-13 2011-07-06 东南大学 降低热载流子效应的p型横向绝缘栅双极型器件
JP2013172085A (ja) * 2012-02-22 2013-09-02 Asahi Kasei Electronics Co Ltd 半導体装置の製造方法及び半導体装置
JP6664261B2 (ja) * 2016-04-07 2020-03-13 キヤノン株式会社 半導体装置及び液体吐出ヘッド用基板
CN109712972B (zh) * 2017-10-26 2024-06-04 上海维安电子股份有限公司 一种过压保护芯片的版图结构

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4602267A (en) * 1981-02-17 1986-07-22 Fujitsu Limited Protection element for semiconductor device
JPH03120751A (ja) * 1989-10-03 1991-05-22 Sharp Corp 半導体素子の静電保護装置

Also Published As

Publication number Publication date
KR970003928A (ko) 1997-01-29
CN1116703C (zh) 2003-07-30
CN1147152A (zh) 1997-04-09
JPH098232A (ja) 1997-01-10
KR100210554B1 (ko) 1999-07-15
US5895958A (en) 1999-04-20
JP2638571B2 (ja) 1997-08-06

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