CN111656514B - 半导体封装件 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 48
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- 229910016525 CuMo Inorganic materials 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
- H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
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- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/171—Frame
- H01L2924/172—Disposition
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Abstract
在基座板(1)之上设置有晶体管(2)以及匹配电路基板(3~6),它们彼此连接。框架(15)设置于基座板(1)之上,将晶体管(2)及匹配电路基板(3~6)的周围包围。框架(15)与基座板(1)相比线膨胀系数小。在框架(15)设置有螺钉固定部(17)。基座板(1)的尺寸小于框架(15)。
Description
技术领域
本发明涉及半导体封装件。
背景技术
就在微波波段下使用的半导体放大器而言,使用高功率内部匹配电路型晶体管的半导体封装件。当前,通过将螺钉紧固于半导体封装件的基座板的螺钉固定部,从而将半导体封装件安装于半导体放大器的框体(例如,参照专利文献1)。
专利文献1:日本特开2014-49726号公报
发明内容
以往,为了设置螺钉固定部而需要增大基座板的尺寸。但是,基座板与所安装的匹配电路基板或晶体管等其它部件相比线膨胀系数大。由于该线膨胀系数差,在这些部件的安装或封装时的高温处理中,半导体封装件发生翘曲。因此,存在以下问题,即,在将半导体封装件安装至半导体放大器的框体时,在基座板的下表面与框体之间产生间隙,从晶体管至接地即框体为止的路径改变,高频特性和可靠性下降。
本发明就是为了解决上述这样的课题而提出的,其目的在于得到能够提高高频特性和可靠性的半导体封装件。
本发明涉及的半导体封装件的特征在于,具有:基座板;晶体管及匹配电路基板,它们设置于所述基座板之上且彼此连接;以及框架,其设置于所述基座板之上,将所述晶体管及所述匹配电路基板的周围包围,所述框架与所述基座板相比线膨胀系数小,在所述框架设置螺钉固定部,所述基座板的尺寸小于所述框架。
发明的效果
在本发明中,增大线膨胀系数小的框架的尺寸而设置有螺钉固定部。因此,不需要在基座板设置螺钉固定部,所以能够将线膨胀系数大的基座板的尺寸设得比框架小。由此,能够抑制安装了匹配电路基板和晶体管后的基座板的翘曲。因此,基座板的下表面与半导体放大器的框体的密接性提高而实现接地,所以能够提高高频特性和可靠性。
附图说明
图1是表示实施方式1涉及的半导体封装件的俯视图。
图2是沿图1的I-II的剖面图。
图3是表示实施方式1涉及的半导体封装件的内部的俯视图。
图4是表示对比例涉及的半导体封装件的斜视图。
图5是表示对比例涉及的半导体封装件的背面的Z方向位移的斜视图。
图6是对比例涉及的半导体封装件的侧视图。
图7是表示实施方式2涉及的半导体封装件的剖面图。
图8是表示实施方式3涉及的半导体封装件的剖面图。
图9是表示实施方式4涉及的半导体封装件的剖面图。
图10是表示实施方式4涉及的半导体封装件的仰视图。
具体实施方式
参照附图,对实施方式涉及的半导体封装件进行说明。对相同或相应的结构要素标注相同的标号,有时省略重复说明。
实施方式1.
图1是表示实施方式1涉及的半导体封装件的俯视图。图2是沿图1的I-II的剖面图。图3是表示实施方式1涉及的半导体封装件的内部的俯视图。该半导体封装件是高功率内部匹配电路型晶体管。
在基座板1之上设置有晶体管2以及匹配电路基板3~6。输入引线端子7通过Au导线8而与匹配电路基板3的配线连接。匹配电路基板3与匹配电路基板4的配线通过Au导线9而连接。匹配电路基板4的配线通过Au导线10而与晶体管2的控制电极连接。晶体管2的下表面电极与基座板1连接。晶体管2的上表面电极通过Au导线11而与匹配电路基板5的配线连接。匹配电路基板5与匹配电路基板6的配线通过Au导线12而连接。匹配电路基板6的配线通过Au导线13而与输出引线端子14连接。
框架15设置于基座板1之上,将晶体管2以及匹配电路基板3~6的周围包围。盖16设置于框架15之上,覆盖晶体管2以及匹配电路基板3~6的上方。基座板1由线膨胀系数9.1[10-6/K]的CuMo构成。框架15及盖16由线膨胀系数5.2[10-6/K]的科瓦铁镍钴合金(Kovar)构成。因此,框架15及盖16与基座板1相比线膨胀系数小。
在框架15设置有螺钉固定部17。螺钉固定部17是在框架15的相对的2条边分别各设置了2个的切口,但也可以是螺钉孔。将螺钉18穿过该螺钉固定部17而将半导体封装件通过螺钉固定于半导体放大器的框体19。
接着,与对比例进行比较,对本实施方式的效果进行说明。图4是表示对比例涉及的半导体封装件的斜视图。图5是表示对比例涉及的半导体封装件的背面的Z方向位移的斜视图。图6是对比例涉及的半导体封装件的侧视图。在对比例中,由于在半导体封装件的基座板1设置螺钉固定部17,因此需要增大线膨胀系数大的基座板1的尺寸。因此,半导体封装件发生翘曲,所以在安装至半导体放大器的框体19时在基座板1的下表面与框体19之间产生间隙,从晶体管2至接地即框体19为止的路径改变,高频特性和可靠性下降。
与此相对,在本实施方式中,增大线膨胀系数小的框架15的尺寸而设置螺钉固定部17。因此,不需要在基座板1设置螺钉固定部17,所以能够将线膨胀系数大的基座板1的尺寸设得比框架15小。由此,能够抑制安装了匹配电路基板3~6和晶体管2后的基座板1的翘曲。因此,基座板1的下表面与半导体放大器的框体19之间的密接性提高而实现接地,所以能够提高高频特性和可靠性。另外,通过将相对于基座板1而位于上方的框架15通过螺钉固定于半导体放大器的框体19,从而与将基座板1通过螺钉进行固定的情况相比,基座板1的翘曲的矫正力大。
实施方式2.
图7是表示实施方式2涉及的半导体封装件的剖面图。在本实施方式中,增大盖16的尺寸而设置螺钉固定部17。并且,将线膨胀系数大的基座板1的尺寸设得比盖16小。由此,能够抑制基座板1的翘曲。因此,基座板1的下表面与半导体放大器的框体19的密接性提高而实现接地,因此能够提高高频特性和可靠性。另外,通过将相对于基座板1而位于上方的盖16通过螺钉固定于半导体放大器的框体19,从而与将基座板1通过螺钉进行固定的情况相比,基座板1的翘曲的矫正力大。
实施方式3.
图8是表示实施方式3涉及的半导体封装件的剖面图。在本实施方式中,在基座板1设置有螺钉固定部17。陶瓷基板20被埋入至在基座板1的下表面设置的槽中。陶瓷基板20与匹配电路基板3~6的材质(即线膨胀系数)、厚度以及大小相同。由此,能够抑制基座板1的翘曲。因此,基座板1的下表面与半导体放大器的框体19的密接性提高而实现接地,所以能够提高高频特性和可靠性。但是,为了维持晶体管2的散热性,在晶体管2的正下方未配置与基座板1相比热阻大的陶瓷基板20。
实施方式4.
图9是表示实施方式4涉及的半导体封装件的剖面图。图10是表示实施方式4涉及的半导体封装件的仰视图。在本实施方式中,在基座板1设置有螺钉固定部17。基座板1具有第1金属21和第2金属22,该第1金属21由在晶体管2的正下方配置的CuMo构成,该第2金属22由与第1金属21相比线膨胀系数小而热阻大的钼等构成。
通过将线膨胀系数小的第2金属22组装于基座板1,从而能够抑制基座板1的翘曲。因此,基座板1的下表面与半导体放大器的框体19的密接性提高而实现接地,因此能够提高高频特性和可靠性。
另外,将热阻小的第1金属21配置于晶体管2的正下方,由此确保散热性。具体地说,晶体管2的热通过从晶体管2的下表面朝向基座板1的下表面以45°的角度扩展的区域而扩散。因此,线膨胀系数小的第2金属22不设置于对其热阻有影响的区域内,而是设置于对热阻没有影响的区域。
标号的说明
1基座板,2晶体管,3~6匹配电路基板,15框架,16盖,17螺钉固定部,20陶瓷基板,21第1金属,22第2金属
Claims (2)
1.一种半导体封装件,其特征在于,具有:
基座板;
晶体管及匹配电路基板,它们设置于所述基座板之上且彼此连接;以及
框架,其设置于所述基座板之上,将所述晶体管及所述匹配电路基板的周围包围,
所述框架与所述基座板相比线膨胀系数小,
在所述框架设置螺钉固定部,
所述基座板的尺寸小于所述框架,
所述框架的下表面与所述基座板的上表面接触,
将螺钉穿过所述螺钉固定部而将所述框架以及所述基座板固定连接至框体。
2.一种半导体封装件,其特征在于,具有:
基座板;
晶体管及匹配电路基板,它们设置于所述基座板之上且彼此连接;
框架,其设置于所述基座板之上,将所述晶体管及所述匹配电路基板的周围包围;以及
盖,其设置于所述框架之上,覆盖所述晶体管及所述匹配电路基板的上方,
所述框架及所述盖与所述基座板相比线膨胀系数小,
在所述盖设置螺钉固定部,
所述基座板的尺寸小于所述盖,
所述框架的下表面与所述基座板的上表面接触,
将螺钉穿过所述螺钉固定部而将所述盖、所述框架以及所述基座板固定连接至框体。
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JP2008053588A (ja) | 2006-08-28 | 2008-03-06 | Daikin Ind Ltd | パワーモジュール |
JP5127617B2 (ja) * | 2008-07-23 | 2013-01-23 | 三菱電機株式会社 | 半導体装置 |
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JP2014207387A (ja) * | 2013-04-15 | 2014-10-30 | 株式会社東芝 | 半導体パッケージ |
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US4985753A (en) * | 1989-03-17 | 1991-01-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor package |
CN102931148A (zh) * | 2011-08-10 | 2013-02-13 | 三星电机株式会社 | 半导体封装基板 |
JP2013149912A (ja) * | 2012-01-23 | 2013-08-01 | Kyocera Corp | 配線基板および電子装置 |
CN105990277A (zh) * | 2015-03-16 | 2016-10-05 | 三菱电机株式会社 | 电力用半导体装置 |
JP2017073196A (ja) * | 2015-10-05 | 2017-04-13 | キヤノンファインテック株式会社 | 加熱装置、定着装置及び画像形成装置 |
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JPWO2019142349A1 (ja) | 2020-01-23 |
JP6358415B1 (ja) | 2018-07-18 |
WO2019142349A1 (ja) | 2019-07-25 |
US20210225717A1 (en) | 2021-07-22 |
DE112018006914T5 (de) | 2020-10-01 |
CN111656514A (zh) | 2020-09-11 |
US11315842B2 (en) | 2022-04-26 |
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