CN111602225A - 欧姆接触和用于制造其的方法 - Google Patents

欧姆接触和用于制造其的方法 Download PDF

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CN111602225A
CN111602225A CN201980008573.XA CN201980008573A CN111602225A CN 111602225 A CN111602225 A CN 111602225A CN 201980008573 A CN201980008573 A CN 201980008573A CN 111602225 A CN111602225 A CN 111602225A
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许国阳
让-弗朗西斯·苏仁
C·高希
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Abstract

公开了包括材料的欧姆接触和用于在低温下在n‑型半导体基板上形成n‑型欧姆接触的方法。材料包括反应物层、n‑型掺杂剂层、封盖层，和在一些情况下，粘合层。封盖层可包括金属层和扩散阻挡层。欧姆接触可在150℃和250℃之间的温度下形成在n‑型半导体基板上，并且可抵抗操作期间的劣化。

Description

欧姆接触和用于制造其的方法
相关申请的交叉引用
本申请要求于2018年1月16日提交的美国临时专利申请号62/617,699和于2018年5月8日提交的美国临时专利申请号62/668,476的优先权的权益，其内容通过引用以它们的整体并入本文。
技术领域
本公开涉及粘合至由III-V半导体制成的基板的欧姆接触以及用于制造其的方法。
背景技术
半导体装置通常包括具有不同机械和物理特性的许多组分。例如，竖腔表面发射激光器(VCSEL)可包括由嵌入半导体材料(比如砷化镓(GaAs)、砷化铝(AlAs)和砷化镓铝(AlxGa1-xAs))中的陶瓷材料(比如氧化铝(Al2O3))组成的电流限制开口。
陶瓷和半导体的物理特性可明显不同。例如，陶瓷电流限制开口和其中嵌入陶瓷电流限制开口的半导体材料的热膨胀系数(CTE)可基本上不同。在这种情况下，在热处理期间，在陶瓷-半导体界面处可发展出热应力，例如，当将电接触粘合至基板。这些应力可足够在界面处产生微结构缺陷，从而导致降低的装置寿命。
降低热处理的温度可有效降低在界面处发展出的热应力。例如，在350℃下用于粘合电接触的热处理通常导致微结构缺陷，而较低的温度比如150℃-250℃可导致更少的缺陷或完全消除了缺陷。
因此，需要产生低温热处理之后的欧姆电接触的接触材料。欧姆接触应抵抗操作期间的劣化并且具有与欧姆接触粘合至的基板相同多数的电荷载流子类型(即，n-型或p-型)。
发明内容
本公开涉及在低温下粘合至n-型半导体基板的n-型欧姆电接触和用于制造其的方法。例如，在一个方面中，用于在n-型半导体基板上制造n-型欧姆接触的方法包括下述步骤：
o将反应物层沉积在n-型半导体基板上，反应物层包括金属反应物；
o将n-型掺杂剂层沉积在反应物层上，n-型掺杂剂层包括n-型掺杂剂；
o将封盖层沉积在反应物层上，封盖层包括金属层和扩散阻挡层；和
o将n-型半导体基板、反应物层、n-型掺杂剂层和封盖层加热至使得n-型掺杂剂从n-型掺杂剂层扩散至n-型半导体基板中，形成富含n-型掺杂剂的界面层，并且使得n-型掺杂剂和金属反应物相互扩散，从而形成邻近富含n-型掺杂剂的界面层的产物层的温度。
在一些情况下，用于制造n-型欧姆接触的方法进一步包括沉积粘合层的步骤。
在另一方面中，n-型欧姆接触包括n-型半导体基板，和嵌入n-型半导体基板中的富含n-型掺杂剂的界面层。富含n-型掺杂剂的界面层包括n-型掺杂剂。n-型欧姆接触进一步包括邻近富含n-型掺杂剂的界面层的产物层。产物层包括金属反应物和n-型掺杂剂。n-型欧姆接触进一步包括邻近产物层的封盖层。封盖层包括金属层和扩散阻挡层。
在一些情况下，n-型欧姆接触进一步包括在产物层和封盖层之间的粘合层。
其他方面、特征和优势将从下述详细描述、附图和权利要求中是显而易见的。
附图说明
图1A描绘了在加热之前沉积在基板上的层的示例。
图1B描绘了加热之后的示例层。
具体实施方式
图1A描绘了当根据本公开加工时的一系列层，产生具有n-型半导体基板102的n-型欧姆接触100。层包括反应物层104、n-型掺杂剂层106、粘合层108和封盖层110。封盖层110包括金属层112和扩散阻挡层114。层可通过电子束蒸发、溅射或热蒸发来沉积，但是可使用任何适当的方法，如对本领域普通技术人员显而易见的。
n-型半导体基板102可由一种或多种III族元素、一种或多种V族元素和n-型掺杂剂组成。图1A和图1B中描绘的示例n-型半导体基板102为砷化镓(GaAs)，但是其他III-V族半导体材料包括在本公开的范围内，比如砷化铝(AlAs)、砷化镓铝(AlxGa1-xAs)、锑化铟(InSb)和锑化镓(GaSb)。n-型掺杂剂可包括一种或多种掺杂的供体，比如硅、锗和锡，以提供适于特别的应用的载流子浓度。例如，当n-型半导体基板102整合在竖腔表面发射激光器中时，n-型掺杂剂可为硅掺杂的，以实现1×1017/cm3至2×1018/cm3之间的载流子浓度。
反应物层104包括金属反应物(未描绘)。与描绘在图1A中的示例反应物层104相关的示例金属反应物为钯，但是其他元素在本公开的范围内。例如，金属反应物可为选自由下述组成的组中的一种或多种元素：镍、钯和铂。描绘在图1A中的示例反应物层104为520埃厚，然而，其他厚度在本公开的范围内。例如，可沉积金属反应物，使得反应物层104在300埃和620埃之间。
n-型掺杂剂层106包括n-型掺杂剂(未描绘)。n-型掺杂剂可包括一种或多种类型的供体，比如硅、锗和锡。在一些情况下，沉积n-型掺杂剂，使得n-型掺杂剂层106在900埃和1860埃之间。在一些情况下，n-型掺杂剂层106为反应物层104的厚度的两倍和三倍之间。在一些情况下，n-型掺杂剂层106为反应物层102的厚度的约2.4倍。描绘在图1A中的示例n-型掺杂剂层106为1250埃厚并且n-型掺杂剂为锗。n-型掺杂剂配置为扩散通过反应物层104并且进入n-型半导体基板102中，并且与反应物层104相互混合。从而，n-型掺杂剂层106的组成和厚度可取决于期望的n-型掺杂剂扩散至n-型半导体基板102中的量、n-型掺杂剂与金属反应物(例如，在反应物层104中)的比例和随后的热处理的温度和持续时间。
封盖层110中的金属层112可包括选自由下述组成的组中的一种或多种元素：金和银。描绘在图1A和图1B中的示例金属层112为金。可沉积一种或多种元素，使得金属层的厚度在500埃和1500埃之间。示例金属层112为1000埃。金属层112配置为提供低接触电阻基板，用于另外的电接触。描绘在图1A和图1B中的示例包括与其他电接触(未描绘)电连通的焊料116。其他电接触，比如电镀金，包括在本公开的范围内。在一些情况下，两微米至三微米的金可电镀在金属层112上。
封盖层110中的扩散阻挡层114可包括选自由下述组成的组中的一种或多种元素：镍、钯和铂。沉积元素，使得扩散阻挡层114的厚度在650埃和850埃之间。描绘在图1A和图1B中的示例包括沉积的铂，使得扩散阻挡层114为750埃厚。扩散阻挡层114的组成和厚度可根据应用而改变。例如，在一些情况下，焊料116可包括可容易扩散通过层并且进入n-型半导体基板102中的成分(例如，铟)，从而破坏向其中整合n-型半导体基板102的半导体装置(例如，竖腔表面发射激光器)。从而，扩散阻挡层114的厚度和组成可强烈依赖于影响扩散速率的因素，比如期望的半导体装置的操作温度、粘合/焊接温度以及焊料116或其他电接触的组成。
粘合层108可包括选自由下述组成的组中的一种或多种元素：钛、锆和铪。在一些情况下，在与选自由钛、锆和铪组成的组中的一种或多种元素中的任何一种的合金、化合物、混合物或复合材料中，一种或多种元素可进一步包括钨、钽和/或钼。例如，粘合层108可包括钨化钛(TiW)。沉积一种或多种元素，使得粘合层的厚度在300埃和5000埃之间。描绘在图1A和图1B中的示例粘合层108包括沉积的钛，使得粘合层108的厚度为400埃。
在一些情况下，粘合层108可操作为防止n-型掺杂剂和在扩散阻挡层114中的元素相互扩散。从而，粘合层108的厚度和组成可取决于影响扩散速率的因素，比如n-型掺杂剂层104和扩散阻挡层114的组成，以及热处理的温度和持续时间。
在一些情况下，粘合层108可操作为应力补偿层或应力平衡层。粘合层108的特征可在于固有应力可操作为平衡或抵消在n-型欧姆接触100(比如n-型半导体基板100)的其他组分或整合至n-型半导体基板100(未描绘)中或在n-型半导体基板100(未描绘)上的任何组分的界面中或界面处的固有应力。在一些情况下，粘合层108可操作为平衡或抵消n-型欧姆接触100的其他组分中或在n-型欧姆接触100的其他组分的界面处的热应力。经已知赋予如沉积的材料中固有应力的技术，比如溅射，粘合层108可沉积为具有固有应力。例如，粘合层108可包括溅射的钨化钛。在一些情况下，粘合层108可操作为防止n-型掺杂剂的相互扩散并且可进一步可操作为应力补偿层，而在其他情况下，可完全省略粘合层108。
图1B描绘了热处理之后的示例n-型半导体基板102、反应物层104、n-型掺杂剂层106、粘合层108和封盖层110。热处理之后，与n-型半导体基板102一起形成n-型欧姆接触100。在惰性(例如，N2、Ar)或还原(95:5N2:H)气氛中，将n-型半导体基板102、反应物层104、n-型掺杂剂层106、粘合层108和封盖层110加热至比如150℃至250℃的温度。图1B中描绘的示例n-型欧姆接触100为在250℃下在N2气氛中热处理15分钟的结果。在一些情况下，采用缓慢攀升速率，以避免热休克(例如，可使用5℃/分钟-8℃/分钟的攀升速率)。
如上述，n-型掺杂剂层中的n-型掺杂剂扩散至n-型半导体基板102中，形成富含n-型掺杂剂的界面层118。而且，n-型掺杂剂和金属反应物相互扩散，形成产物层120。在一些情况下，产物层120包括由金属反应物和n-型掺杂剂以1:4的原子比组成的产物。在一些情况下，产物层120在反应物层104的厚度的50％和90％之间。
可对前述实施方案进行其他改进，并且在上面不同实施方案中描述的特征可在相同的实施方案中组合。因此，其他实施方案在权利要求的范围内。

Claims (23)

1.一种用于在n-型半导体基板上制造n-型欧姆接触的方法，所述方法包括下述步骤：
将反应物层沉积在所述n-型半导体基板上，所述反应物层包括金属反应物；
将n-型掺杂剂层沉积在所述反应物层上，所述n-型掺杂剂层包括n-型掺杂剂；
将封盖层沉积在所述反应物层上，所述封盖层包括金属层和扩散阻挡层；和
将所述n-型半导体基板、所述反应物层、所述n-型掺杂剂层和所述封盖层加热至使得所述n-型掺杂剂从所述n-型掺杂剂层扩散至所述n-型半导体基板中，形成富含n-型掺杂剂的界面层，并且使得所述n-型掺杂剂和所述金属反应物相互扩散，从而形成邻近所述富含n-型掺杂剂的界面层的产物层的温度。
2.根据权利要求1所述的方法，进一步包括沉积粘合层的步骤。
3.根据权利要求1所述的方法，其中所述n-型半导体基板由一种或多种III族元素、一种或多种V族元素和一种或多种n-型掺杂剂组成。
4.根据权利要求1所述的方法，其中所述金属反应物包括选自由镍、钯和铂组成的组中的一种或多种元素，其中沉积所述元素，使得所述反应物层的厚度为特定厚度。
5.根据权利要求4所述的方法，其中所述n-型掺杂剂包括选自由硅、锗和锡组成的组中的一种或多种元素，其中沉积所述元素使得所述n-型掺杂剂层的所述厚度在所述特定厚度的两倍和三倍之间。
6.根据权利要求5所述的方法，其中所述特定厚度在300埃和620埃之间并且所述n-型掺杂剂层的所述厚度在900埃和1860埃之间。
7.根据权利要求1所述的方法，其中所述金属层包括选自由金和银组成的组中的一种或多种元素，其中沉积所述元素使得所述金属层的所述厚度在500埃和1500埃之间。
8.根据权利要求1所述的方法，其中所述扩散阻挡层包括选自由镍、钯和铂组成的组中的一种或多种元素，其中沉积所述元素使得所述扩散阻挡层的所述厚度在650埃和850埃之间。
9.根据权利要求2所述的方法，其中所述粘合层包括选自由钛、锆和铪组成的组中的一种或多种元素，其中沉积所述元素使得所述粘合层的所述厚度在300埃和500埃之间。
10.根据权利要求1所述的方法，其中所述产物层包括由所述金属反应物和所述n-型掺杂剂以1:4的原子比组成的产物。
11.根据权利要求10所述的方法，其中所述产物层在所述反应物层的所述厚度的50％和90％之间。
12.根据权利要求1所述的方法，其中所述温度在150℃至250℃之间。
13.根据权利要求1所述的方法，其中在惰性或还原气氛中，将所述n-型半导体基板、所述反应物层、所述n-型掺杂剂层和所述封盖层加热至所述温度。
14.一种n-型欧姆接触，包括：
n-型半导体基板；
嵌入所述n-型半导体基板中的富含n-型掺杂剂的界面层，所述富含n-型掺杂剂的界面层包括n-型掺杂剂；
邻近所述富含n-型掺杂剂的界面层的产物层，所述产物层包括金属反应物和所述n-型掺杂剂；和
邻近所述产物层的封盖层，所述封盖层包括金属层和扩散阻挡层。
15.根据权利要求14所述的n-型欧姆接触，进一步包括在所述产物层和所述封盖层之间的粘合层。
16.根据权利要求14所述的n-型欧姆接触，其中所述产物层由所述金属反应物和所述n-型掺杂剂以1:4的原子比组成，并且所述产物层的所述厚度在150埃和558埃之间。
17.根据权利要求14所述的n-型欧姆接触，其中所述n-型掺杂剂包括选自由硅、锗和锡组成的组中的一种或多种元素，并且所述金属反应物包括选自由镍、钯和铂组成的组中的一种或多种元素。
18.根据权利要求14所述的n-型欧姆接触，其中所述金属层包括选自由金和银组成的组中的一种或多种元素，并且所述金属层的所述厚度在两微米和三微米之间。
19.根据权利要求14所述的n-型欧姆接触，其中所述扩散阻挡层包括选自由镍、钯和铂组成的组中的元素，并且所述扩散阻挡层的所述厚度在650埃和850埃之间。
20.根据权利要求15所述的n-型欧姆接触，其中所述粘合层包括选自由钛、锆和铪组成的组中的一种或多种元素，所述粘合层的所述厚度在300埃和5000埃之间。
21.根据权利要求15所述的n-型欧姆接触，其中所述粘合层操作为防止所述n-型掺杂剂的相互扩散和/或操作为应力补偿层。
22.根据权利要求21所述的n-型欧姆接触，其中所述粘合层包括钨化钛。
23.根据权利要求22所述的n-型欧姆接触，其中所述钨化钛通过溅射沉积在所述n-型掺杂剂层106上，使得所述钨化钛的特征在于固有应力。
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