CN111566803B - 用于控制纳米线或纳米片晶体管器件的晶体管延迟的方法 - Google Patents

用于控制纳米线或纳米片晶体管器件的晶体管延迟的方法 Download PDF

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CN111566803B
CN111566803B CN201880085673.8A CN201880085673A CN111566803B CN 111566803 B CN111566803 B CN 111566803B CN 201880085673 A CN201880085673 A CN 201880085673A CN 111566803 B CN111566803 B CN 111566803B
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fin structure
stacked
channel
stacked fin
channel material
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CN111566803A (zh
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杰弗里·史密斯
苏巴迪普·卡尔
安东·J·德维莱尔
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Tokyo Electron Ltd
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    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0193—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including FinFETs
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    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
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  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Thin Film Transistor (AREA)
  • Networks Using Active Elements (AREA)
  • Pulse Circuits (AREA)
CN201880085673.8A 2017-12-04 2018-12-03 用于控制纳米线或纳米片晶体管器件的晶体管延迟的方法 Active CN111566803B (zh)

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US201762594352P 2017-12-04 2017-12-04
US62/594,352 2017-12-04
PCT/US2018/063623 WO2019112954A1 (en) 2017-12-04 2018-12-03 Method for controlling transistor delay of nanowire or nanosheet transistor devices

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CN111566803A CN111566803A (zh) 2020-08-21
CN111566803B true CN111566803B (zh) 2024-02-23

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US (2) US10714391B2 (https=)
JP (1) JP7089656B2 (https=)
KR (2) KR102449793B1 (https=)
CN (1) CN111566803B (https=)
TW (1) TWI775995B (https=)
WO (1) WO2019112954A1 (https=)

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