CN111566803B - 用于控制纳米线或纳米片晶体管器件的晶体管延迟的方法 - Google Patents

用于控制纳米线或纳米片晶体管器件的晶体管延迟的方法 Download PDF

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CN111566803B
CN111566803B CN201880085673.8A CN201880085673A CN111566803B CN 111566803 B CN111566803 B CN 111566803B CN 201880085673 A CN201880085673 A CN 201880085673A CN 111566803 B CN111566803 B CN 111566803B
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fin structure
stacked
channel
stacked fin
channel material
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CN111566803A (zh
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杰弗里·史密斯
苏巴迪普·卡尔
安东·J·德维莱尔
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Tokyo Electron Ltd
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    • H10D84/01Manufacture or treatment
    • H10D84/0123Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0193Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including FinFETs
    • BPERFORMING OPERATIONS; TRANSPORTING
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    • H10D30/0321Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D30/673Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
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  • Crystallography & Structural Chemistry (AREA)
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Thin Film Transistor (AREA)
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  • Pulse Circuits (AREA)
CN201880085673.8A 2017-12-04 2018-12-03 用于控制纳米线或纳米片晶体管器件的晶体管延迟的方法 Active CN111566803B (zh)

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US201762594352P 2017-12-04 2017-12-04
US62/594,352 2017-12-04
PCT/US2018/063623 WO2019112954A1 (en) 2017-12-04 2018-12-03 Method for controlling transistor delay of nanowire or nanosheet transistor devices

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CN111566803A CN111566803A (zh) 2020-08-21
CN111566803B true CN111566803B (zh) 2024-02-23

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US (2) US10714391B2 (https=)
JP (1) JP7089656B2 (https=)
KR (2) KR102550501B1 (https=)
CN (1) CN111566803B (https=)
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WO (1) WO2019112954A1 (https=)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11404325B2 (en) * 2013-08-20 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Silicon and silicon germanium nanowire formation
KR102434993B1 (ko) * 2015-12-09 2022-08-24 삼성전자주식회사 반도체 소자
US12408431B2 (en) * 2018-04-06 2025-09-02 International Business Machines Corporation Gate stack quality for gate-all-around field-effect transistors
US10825933B2 (en) * 2018-06-11 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure and manufacturing method for the same
US20200295127A1 (en) * 2019-03-13 2020-09-17 Intel Corporation Stacked transistors with different crystal orientations in different device strata
US11037905B2 (en) * 2019-04-26 2021-06-15 International Business Machines Corporation Formation of stacked vertical transport field effect transistors
US11069679B2 (en) * 2019-04-26 2021-07-20 International Business Machines Corporation Reducing gate resistance in stacked vertical transport field effect transistors
KR20250141848A (ko) * 2019-05-13 2025-09-29 더 보드 오브 리젠츠 오브 더 유니버시티 오브 텍사스 시스템 3차원 sram 아키텍처 및 광학 도파관의 제작을 위한 촉매 영향의 화학적 에칭
US11710667B2 (en) * 2019-08-27 2023-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the same
US11557655B2 (en) 2019-10-11 2023-01-17 Tokyo Electron Limited Device and method of forming with three-dimensional memory and three-dimensional logic
CN112951912B (zh) * 2019-12-10 2024-05-14 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US11302692B2 (en) * 2020-01-16 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
US11664656B2 (en) 2020-03-18 2023-05-30 Mavagail Technology, LLC ESD protection for integrated circuit devices
US11837280B1 (en) * 2020-05-20 2023-12-05 Synopsys, Inc. CFET architecture for balancing logic library and SRAM bitcell
CN116325174A (zh) * 2020-09-29 2023-06-23 华为技术有限公司 晶体管及其制作方法、集成电路、电子设备
US20240004381A1 (en) 2020-11-20 2024-01-04 Drovid Technologies Spa METHOD TO TRANSMIT AND TRACK PARAMETERS DETECTED BY DRONES USING (PaaS) WITH (AI)
WO2022109762A1 (zh) * 2020-11-24 2022-06-02 中芯国际集成电路制造(上海)有限公司 半导体结构及半导体结构的形成方法
US11527535B2 (en) 2021-01-21 2022-12-13 International Business Machines Corporation Variable sheet forkFET device
US11424120B2 (en) 2021-01-22 2022-08-23 Tokyo Electron Limited Plasma etching techniques
CN115050646B (zh) * 2021-03-08 2025-05-27 北方集成电路技术创新中心(北京)有限公司 半导体结构及其形成方法
CN113130489A (zh) * 2021-03-12 2021-07-16 中国科学院微电子研究所 一种半导体器件的制造方法
US11843001B2 (en) 2021-05-14 2023-12-12 Samsung Electronics Co., Ltd. Devices including stacked nanosheet transistors
TWI898138B (zh) * 2021-05-14 2025-09-21 南韓商三星電子股份有限公司 奈米薄片電晶體裝置及其形成方法
US12170322B2 (en) * 2021-05-14 2024-12-17 Samsung Electronics Co., Ltd. Devices including stacked nanosheet transistors
TW202249290A (zh) * 2021-05-14 2022-12-16 南韓商三星電子股份有限公司 奈米薄片電晶體裝置及其形成方法
KR102864496B1 (ko) 2021-06-24 2025-09-24 삼성전자주식회사 반도체 장치 및 그 제조 방법
US12087770B2 (en) 2021-08-05 2024-09-10 International Business Machines Corporation Complementary field effect transistor devices
KR102877120B1 (ko) * 2021-08-13 2025-10-27 삼성전자주식회사 반도체 소자
US12166037B2 (en) * 2021-08-27 2024-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation layers in stacked semiconductor devices
US12113067B2 (en) 2021-09-13 2024-10-08 International Business Machines Corporation Forming N-type and P-type horizontal gate-all-around devices
US11837604B2 (en) 2021-09-22 2023-12-05 International Business Machine Corporation Forming stacked nanosheet semiconductor devices with optimal crystalline orientations around devices
US12191208B2 (en) 2021-09-23 2025-01-07 International Business Machines Corporation Dual strained semiconductor substrate and patterning
US12563797B2 (en) * 2021-10-15 2026-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
KR102947675B1 (ko) 2021-10-28 2026-04-06 삼성전자주식회사 3차원 반도체 소자 및 그의 제조 방법
US12255099B2 (en) 2021-10-28 2025-03-18 Samsung Electronics Co., Ltd. Methods of forming fin-on-nanosheet transistor stacks
US12310062B2 (en) 2021-11-11 2025-05-20 Samsung Electronics Co., Ltd. Integrated circuit devices including stacked transistors and methods of forming the same
US12439641B2 (en) * 2021-11-19 2025-10-07 Tokyo Electron Limited Compact 3D design and connections with optimum 3D transistor stacking
US12324207B2 (en) 2021-12-03 2025-06-03 International Business Machines Corporation Channel protection of gate-all-around devices for performance optimization
US20230178435A1 (en) * 2021-12-07 2023-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Complementary fet (cfet) devices and methods
US20230207468A1 (en) * 2021-12-28 2023-06-29 International Business Machines Corporation Stacked staircase cmos with buried power rail
US12615812B2 (en) 2022-02-22 2026-04-28 International Business Machines Corporation Stacked field-effect transistors
US12262559B2 (en) * 2022-04-07 2025-03-25 Applied Materials, Inc. Monolithic complementary field-effect transistors having carbon-doped release layers
KR102893178B1 (ko) 2022-05-17 2025-11-28 삼성전자주식회사 반도체 장치
CN119522486A (zh) * 2022-05-20 2025-02-25 东京毅力科创株式会社 在形成有源器件之前通过晶片键合来结合背面电力分配网络的顺序互补型fet
KR102809779B1 (ko) * 2022-09-14 2025-05-16 연세대학교 산학협력단 재구성 가능한 양극성 트랜지스터
WO2024085972A1 (en) * 2022-10-17 2024-04-25 Applied Materials, Inc. Improved channel uniformity horizontal gate all around device
US20240429102A1 (en) * 2023-06-21 2024-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof
US12615817B2 (en) 2023-06-27 2026-04-28 International Business Machines Corporation Stacked FET with low parasitic-capacitance gate

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029503A (ja) * 2009-07-28 2011-02-10 Toshiba Corp 半導体装置
CN105518840A (zh) * 2013-10-03 2016-04-20 英特尔公司 用于纳米线晶体管的内部间隔体及其制造方法
WO2017044107A1 (en) * 2015-09-10 2017-03-16 Intel Corporation Semiconductor nanowire device having cavity spacer and method of fabricating cavity spacer for semiconductor nanowire device
US9660028B1 (en) * 2016-10-31 2017-05-23 International Business Machines Corporation Stacked transistors with different channel widths
CN106876275A (zh) * 2015-11-30 2017-06-20 台湾积体电路制造股份有限公司 半导体器件及其制造方法
CN107017205A (zh) * 2015-11-30 2017-08-04 台湾积体电路制造股份有限公司 半导体器件及其制造方法
WO2017171845A1 (en) * 2016-04-01 2017-10-05 Intel Corporation Beaded fin transistor

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI283066B (en) * 2004-09-07 2007-06-21 Samsung Electronics Co Ltd Field effect transistor (FET) having wire channels and method of fabricating the same
US8551833B2 (en) * 2011-06-15 2013-10-08 International Businesss Machines Corporation Double gate planar field effect transistors
US9224810B2 (en) 2011-12-23 2015-12-29 Intel Corporation CMOS nanowire structure
US9012284B2 (en) 2011-12-23 2015-04-21 Intel Corporation Nanowire transistor devices and forming techniques
WO2014018201A1 (en) 2012-07-27 2014-01-30 Intel Corporation Nanowire transistor devices and forming techniques
KR102002380B1 (ko) * 2012-10-10 2019-07-23 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9893167B2 (en) * 2014-03-24 2018-02-13 Intel Corporation Integration methods to fabricate internal spacers for nanowire devices
US9818872B2 (en) * 2015-06-30 2017-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate device and method of fabrication thereof
EP3127862B1 (en) 2015-08-06 2018-04-18 IMEC vzw A method of manufacturing a gate-all-around nanowire device comprising two different nanowires
CN106531632B (zh) * 2015-09-10 2020-01-03 中国科学院微电子研究所 堆叠纳米线mos晶体管制作方法
US20170170268A1 (en) * 2015-12-15 2017-06-15 Qualcomm Incorporated NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (FETs) (MOSFETs) EMPLOYING A NANOWIRE CHANNEL STRUCTURE HAVING ROUNDED NANOWIRE STRUCTURES
KR102360333B1 (ko) 2016-02-18 2022-02-08 삼성전자주식회사 반도체 장치
CN106960870B (zh) 2016-01-11 2021-09-10 三星电子株式会社 半导体装置及其制造方法
KR102416133B1 (ko) 2016-01-11 2022-07-01 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102323389B1 (ko) * 2016-03-02 2021-11-05 도쿄엘렉트론가부시키가이샤 튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029503A (ja) * 2009-07-28 2011-02-10 Toshiba Corp 半導体装置
CN105518840A (zh) * 2013-10-03 2016-04-20 英特尔公司 用于纳米线晶体管的内部间隔体及其制造方法
WO2017044107A1 (en) * 2015-09-10 2017-03-16 Intel Corporation Semiconductor nanowire device having cavity spacer and method of fabricating cavity spacer for semiconductor nanowire device
CN106876275A (zh) * 2015-11-30 2017-06-20 台湾积体电路制造股份有限公司 半导体器件及其制造方法
CN107017205A (zh) * 2015-11-30 2017-08-04 台湾积体电路制造股份有限公司 半导体器件及其制造方法
WO2017171845A1 (en) * 2016-04-01 2017-10-05 Intel Corporation Beaded fin transistor
US9660028B1 (en) * 2016-10-31 2017-05-23 International Business Machines Corporation Stacked transistors with different channel widths

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