TWI775995B - 奈米線或奈米層片電晶體元件之電晶體延遲的控制方法 - Google Patents

奈米線或奈米層片電晶體元件之電晶體延遲的控制方法 Download PDF

Info

Publication number
TWI775995B
TWI775995B TW107143538A TW107143538A TWI775995B TW I775995 B TWI775995 B TW I775995B TW 107143538 A TW107143538 A TW 107143538A TW 107143538 A TW107143538 A TW 107143538A TW I775995 B TWI775995 B TW I775995B
Authority
TW
Taiwan
Prior art keywords
fin structure
stacked
channel
channel material
stacked fin
Prior art date
Application number
TW107143538A
Other languages
English (en)
Chinese (zh)
Other versions
TW201937569A (zh
Inventor
傑佛瑞 史密斯
蘇巴迪普 卡爾
安東 德維利耶
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201937569A publication Critical patent/TW201937569A/zh
Application granted granted Critical
Publication of TWI775995B publication Critical patent/TWI775995B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0193—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including FinFETs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Networks Using Active Elements (AREA)
  • Pulse Circuits (AREA)
TW107143538A 2017-12-04 2018-12-04 奈米線或奈米層片電晶體元件之電晶體延遲的控制方法 TWI775995B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762594352P 2017-12-04 2017-12-04
US62/594,352 2017-12-04

Publications (2)

Publication Number Publication Date
TW201937569A TW201937569A (zh) 2019-09-16
TWI775995B true TWI775995B (zh) 2022-09-01

Family

ID=66659359

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107143538A TWI775995B (zh) 2017-12-04 2018-12-04 奈米線或奈米層片電晶體元件之電晶體延遲的控制方法

Country Status (6)

Country Link
US (2) US10714391B2 (https=)
JP (1) JP7089656B2 (https=)
KR (2) KR102449793B1 (https=)
CN (1) CN111566803B (https=)
TW (1) TWI775995B (https=)
WO (1) WO2019112954A1 (https=)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11404325B2 (en) 2013-08-20 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Silicon and silicon germanium nanowire formation
KR102434993B1 (ko) * 2015-12-09 2022-08-24 삼성전자주식회사 반도체 소자
US12408431B2 (en) * 2018-04-06 2025-09-02 International Business Machines Corporation Gate stack quality for gate-all-around field-effect transistors
US10825933B2 (en) * 2018-06-11 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure and manufacturing method for the same
US20200295127A1 (en) * 2019-03-13 2020-09-17 Intel Corporation Stacked transistors with different crystal orientations in different device strata
US11069679B2 (en) 2019-04-26 2021-07-20 International Business Machines Corporation Reducing gate resistance in stacked vertical transport field effect transistors
US11037905B2 (en) * 2019-04-26 2021-06-15 International Business Machines Corporation Formation of stacked vertical transport field effect transistors
WO2020232025A2 (en) * 2019-05-13 2020-11-19 Board Of Regents, The University Of Texas System Catalyst influenced chemical etching for fabricating three-dimensional sram architectures and optical waveguides
US11710667B2 (en) * 2019-08-27 2023-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the same
US11557655B2 (en) 2019-10-11 2023-01-17 Tokyo Electron Limited Device and method of forming with three-dimensional memory and three-dimensional logic
CN112951912B (zh) * 2019-12-10 2024-05-14 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US11302692B2 (en) * 2020-01-16 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
US20210296306A1 (en) 2020-03-18 2021-09-23 Mavagail Technology, LLC Esd protection for integrated circuit devices
US11837280B1 (en) * 2020-05-20 2023-12-05 Synopsys, Inc. CFET architecture for balancing logic library and SRAM bitcell
CN116325174A (zh) * 2020-09-29 2023-06-23 华为技术有限公司 晶体管及其制作方法、集成电路、电子设备
EP4250265A4 (en) 2020-11-20 2024-11-27 Drovid Technologies METHOD FOR TRANSMITTING AND MONITORING PARAMETERS DETECTED BY DRONES VIA (PAAS) WITH (AI)
CN116250077B (zh) * 2020-11-24 2025-08-22 中芯国际集成电路制造(上海)有限公司 半导体结构及半导体结构的形成方法
US11527535B2 (en) 2021-01-21 2022-12-13 International Business Machines Corporation Variable sheet forkFET device
US11424120B2 (en) 2021-01-22 2022-08-23 Tokyo Electron Limited Plasma etching techniques
CN115050646B (zh) * 2021-03-08 2025-05-27 北方集成电路技术创新中心(北京)有限公司 半导体结构及其形成方法
CN113130489A (zh) * 2021-03-12 2021-07-16 中国科学院微电子研究所 一种半导体器件的制造方法
CN115425076A (zh) * 2021-05-14 2022-12-02 三星电子株式会社 纳米片晶体管器件及其形成方法
US12170322B2 (en) * 2021-05-14 2024-12-17 Samsung Electronics Co., Ltd. Devices including stacked nanosheet transistors
US11843001B2 (en) 2021-05-14 2023-12-12 Samsung Electronics Co., Ltd. Devices including stacked nanosheet transistors
CN115347043A (zh) * 2021-05-14 2022-11-15 三星电子株式会社 纳米片晶体管器件及其形成方法
KR102864496B1 (ko) 2021-06-24 2025-09-24 삼성전자주식회사 반도체 장치 및 그 제조 방법
US12087770B2 (en) 2021-08-05 2024-09-10 International Business Machines Corporation Complementary field effect transistor devices
KR102877120B1 (ko) * 2021-08-13 2025-10-27 삼성전자주식회사 반도체 소자
US12166037B2 (en) * 2021-08-27 2024-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation layers in stacked semiconductor devices
US12113067B2 (en) 2021-09-13 2024-10-08 International Business Machines Corporation Forming N-type and P-type horizontal gate-all-around devices
US11837604B2 (en) 2021-09-22 2023-12-05 International Business Machine Corporation Forming stacked nanosheet semiconductor devices with optimal crystalline orientations around devices
US12191208B2 (en) * 2021-09-23 2025-01-07 International Business Machines Corporation Dual strained semiconductor substrate and patterning
US12563797B2 (en) * 2021-10-15 2026-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
KR102947675B1 (ko) 2021-10-28 2026-04-06 삼성전자주식회사 3차원 반도체 소자 및 그의 제조 방법
US12255099B2 (en) 2021-10-28 2025-03-18 Samsung Electronics Co., Ltd. Methods of forming fin-on-nanosheet transistor stacks
US12310062B2 (en) 2021-11-11 2025-05-20 Samsung Electronics Co., Ltd. Integrated circuit devices including stacked transistors and methods of forming the same
US12439641B2 (en) * 2021-11-19 2025-10-07 Tokyo Electron Limited Compact 3D design and connections with optimum 3D transistor stacking
US12324207B2 (en) 2021-12-03 2025-06-03 International Business Machines Corporation Channel protection of gate-all-around devices for performance optimization
US20230178435A1 (en) * 2021-12-07 2023-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Complementary fet (cfet) devices and methods
US20230207468A1 (en) * 2021-12-28 2023-06-29 International Business Machines Corporation Stacked staircase cmos with buried power rail
US20230261090A1 (en) * 2022-02-14 2023-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US12262559B2 (en) * 2022-04-07 2025-03-25 Applied Materials, Inc. Monolithic complementary field-effect transistors having carbon-doped release layers
KR102893178B1 (ko) 2022-05-17 2025-11-28 삼성전자주식회사 반도체 장치
JP2025517426A (ja) * 2022-05-20 2025-06-05 東京エレクトロン株式会社 アクティブデバイスの形成前にウェーハ接合を介してバックサイド電源供給ネットワークを組み込んだシーケンシャル相補型ｆｅｔ
KR102809779B1 (ko) * 2022-09-14 2025-05-16 연세대학교 산학협력단 재구성 가능한 양극성 트랜지스터
US20240136229A1 (en) * 2022-10-17 2024-04-25 Applied Materials, Inc. Channel uniformity horizontal gate all around device
US20240429102A1 (en) * 2023-06-21 2024-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7374986B2 (en) * 2004-09-07 2008-05-20 Samsung Electronics Co., Ltd. Method of fabricating field effect transistor (FET) having wire channels
US9224810B2 (en) * 2011-12-23 2015-12-29 Intel Corporation CMOS nanowire structure
TW201701359A (zh) * 2015-06-30 2017-01-01 台灣積體電路製造股份有限公司 半導體元件與其製作方法
US20170040321A1 (en) * 2015-08-06 2017-02-09 Imec Vzw Gate-all-around nanowire device and method for manufacturing such a device
CN106531632A (zh) * 2015-09-10 2017-03-22 中国科学院微电子研究所 堆叠纳米线mos晶体管制作方法
CN106960870A (zh) * 2016-01-11 2017-07-18 三星电子株式会社 半导体装置及其制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029503A (ja) 2009-07-28 2011-02-10 Toshiba Corp 半導体装置
US8551833B2 (en) * 2011-06-15 2013-10-08 International Businesss Machines Corporation Double gate planar field effect transistors
US9012284B2 (en) 2011-12-23 2015-04-21 Intel Corporation Nanowire transistor devices and forming techniques
KR101958530B1 (ko) * 2012-07-27 2019-03-14 인텔 코포레이션 나노와이어 트랜지스터 디바이스 및 형성 기법
KR102002380B1 (ko) * 2012-10-10 2019-07-23 삼성전자 주식회사 반도체 장치 및 그 제조 방법
EP3053185A4 (en) * 2013-10-03 2017-05-17 Intel Corporation Internal spacers for nanowire transistors and method of fabrication thereof
WO2015147792A1 (en) * 2014-03-24 2015-10-01 Intel Corporation Integration methods to fabricate internal spacers for nanowire devices
WO2017044107A1 (en) * 2015-09-10 2017-03-16 Intel Corporation Semiconductor nanowire device having cavity spacer and method of fabricating cavity spacer for semiconductor nanowire device
US9627540B1 (en) * 2015-11-30 2017-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9583399B1 (en) * 2015-11-30 2017-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US20170170268A1 (en) * 2015-12-15 2017-06-15 Qualcomm Incorporated NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (FETs) (MOSFETs) EMPLOYING A NANOWIRE CHANNEL STRUCTURE HAVING ROUNDED NANOWIRE STRUCTURES
KR102416133B1 (ko) 2016-01-11 2022-07-01 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102360333B1 (ko) 2016-02-18 2022-02-08 삼성전자주식회사 반도체 장치
TWI625785B (zh) * 2016-03-02 2018-06-01 Tokyo Electron Limited 具有可調節選擇性之等向性矽與矽化鍺蝕刻
WO2017171845A1 (en) * 2016-04-01 2017-10-05 Intel Corporation Beaded fin transistor
US9660028B1 (en) * 2016-10-31 2017-05-23 International Business Machines Corporation Stacked transistors with different channel widths

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7374986B2 (en) * 2004-09-07 2008-05-20 Samsung Electronics Co., Ltd. Method of fabricating field effect transistor (FET) having wire channels
US9224810B2 (en) * 2011-12-23 2015-12-29 Intel Corporation CMOS nanowire structure
TW201701359A (zh) * 2015-06-30 2017-01-01 台灣積體電路製造股份有限公司 半導體元件與其製作方法
US20170040321A1 (en) * 2015-08-06 2017-02-09 Imec Vzw Gate-all-around nanowire device and method for manufacturing such a device
CN106531632A (zh) * 2015-09-10 2017-03-22 中国科学院微电子研究所 堆叠纳米线mos晶体管制作方法
CN106960870A (zh) * 2016-01-11 2017-07-18 三星电子株式会社 半导体装置及其制造方法

Also Published As

Publication number Publication date
JP2021506141A (ja) 2021-02-18
KR102449793B1 (ko) 2022-09-29
WO2019112954A1 (en) 2019-06-13
CN111566803A (zh) 2020-08-21
KR102550501B1 (ko) 2023-06-30
US20190172751A1 (en) 2019-06-06
US10714391B2 (en) 2020-07-14
CN111566803B (zh) 2024-02-23
US20200303256A1 (en) 2020-09-24
US10991626B2 (en) 2021-04-27
JP7089656B2 (ja) 2022-06-23
TW201937569A (zh) 2019-09-16
KR20200085920A (ko) 2020-07-15
KR20220137168A (ko) 2022-10-11

Similar Documents

Publication Publication Date Title
TWI775995B (zh) 奈米線或奈米層片電晶體元件之電晶體延遲的控制方法
JP7117057B2 (ja) 相補型電界効果トランジスタ（ｃｆｅｔ）デバイスにおいて複数のチャネル材料を組み込む方法
US10916637B2 (en) Method of forming gate spacer for nanowire FET device
TWI710013B (zh) 使用單元隔離柱對主動奈米結構間的 n-p 空間之功函數金屬圖案化
CN114097074A (zh) 用于通过高k金属栅极(hkmg)膜堆叠的选择性沉积来进行阈值电压调谐的方法
CN119698055A (zh) 倒角的替代栅极结构
TW202226345A (zh) 用於高性能邏輯的多數個3d垂直cmos裝置
US20160086952A1 (en) Preventing epi damage for cap nitride strip scheme in a fin-shaped field effect transistor (finfet) device
US20240145595A1 (en) 3d isolation of a segmentated 3d nanosheet channel region
US10236291B2 (en) Methods, apparatus and system for STI recess control for highly scaled finFET devices
JP7824006B2 (ja) Ｎ／ｐ境界構造を有するナノシート半導体デバイス

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent