CN111448531B - 可编程温度系数模拟二阶曲率补偿电压参考以及电压参考电路的微调技术 - Google Patents

可编程温度系数模拟二阶曲率补偿电压参考以及电压参考电路的微调技术 Download PDF

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Publication number
CN111448531B
CN111448531B CN201880078670.1A CN201880078670A CN111448531B CN 111448531 B CN111448531 B CN 111448531B CN 201880078670 A CN201880078670 A CN 201880078670A CN 111448531 B CN111448531 B CN 111448531B
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China
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current
coupled
voltage
temperature
circuit
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CN201880078670.1A
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Chinese (zh)
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CN111448531A (zh
Inventor
U·R·卡马斯
J·K·詹宁斯
E·库伦
I·C·西卡尔
D·沃尔什
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Xilinx Inc
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Xilinx Inc
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Priority claimed from US15/832,515 external-priority patent/US10290330B1/en
Priority claimed from US15/848,357 external-priority patent/US10120399B1/en
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Publication of CN111448531A publication Critical patent/CN111448531A/zh
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
CN201880078670.1A 2017-12-05 2018-12-04 可编程温度系数模拟二阶曲率补偿电压参考以及电压参考电路的微调技术 Active CN111448531B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15/832,515 US10290330B1 (en) 2017-12-05 2017-12-05 Programmable temperature coefficient analog second-order curvature compensated voltage reference
US15/832,515 2017-12-05
US15/848,357 2017-12-20
US15/848,357 US10120399B1 (en) 2017-12-20 2017-12-20 Trim techniques for voltage reference circuits
PCT/US2018/063911 WO2019113111A1 (fr) 2017-12-05 2018-12-04 Techniques de référence et de compensation de tension à compensation de courbure analogique de second ordre à coefficient de température programmable pour circuits de référence de tension

Publications (2)

Publication Number Publication Date
CN111448531A CN111448531A (zh) 2020-07-24
CN111448531B true CN111448531B (zh) 2022-09-09

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EP (1) EP3721314B1 (fr)
JP (1) JP7281464B2 (fr)
KR (1) KR102600881B1 (fr)
CN (1) CN111448531B (fr)
WO (1) WO2019113111A1 (fr)

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Publication number Priority date Publication date Assignee Title
CN114115423B (zh) * 2021-12-17 2022-12-20 贵州振华风光半导体股份有限公司 一种带数字控制的带隙基准电流源电路
CN115793769B (zh) * 2023-01-29 2023-06-02 江苏润石科技有限公司 带隙基准滑动温度补偿电路及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265857B1 (en) * 1998-12-22 2001-07-24 International Business Machines Corporation Constant current source circuit with variable temperature compensation
CN101178610A (zh) * 2007-12-05 2008-05-14 西安标新电子科技有限责任公司 一种输出可调正、负或零温度系数电流、电压基准的电路
CN102880220A (zh) * 2011-07-12 2013-01-16 联咏科技股份有限公司 温度系数电流触发产生器及温度系数电流触发产生模块

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JPH0618012B2 (ja) * 1983-01-25 1994-03-09 セイコーエプソン株式会社 定電圧回路
JP3586073B2 (ja) * 1997-07-29 2004-11-10 株式会社東芝 基準電圧発生回路
JP4380343B2 (ja) 2004-01-30 2009-12-09 ソニー株式会社 バンドギャップレファレンス回路及び同回路を有する半導体装置
US7127368B2 (en) * 2004-11-19 2006-10-24 Stmicroelectronics Asia Pacific Pte. Ltd. On-chip temperature sensor for low voltage operation
US7204638B2 (en) * 2005-05-23 2007-04-17 Etron Technology, Inc. Precise temperature sensor with smart programmable calibration
JP2007065831A (ja) * 2005-08-30 2007-03-15 Sanyo Electric Co Ltd 定電流回路
US8106707B2 (en) * 2009-05-29 2012-01-31 Broadcom Corporation Curvature compensated bandgap voltage reference
TWI399631B (zh) * 2010-01-12 2013-06-21 Richtek Technology Corp 可快速啟動的低電壓能隙參考電壓產生器
JP5554134B2 (ja) * 2010-04-27 2014-07-23 ローム株式会社 電流生成回路およびそれを用いた基準電圧回路
JP6234038B2 (ja) 2013-03-01 2017-11-22 ローム株式会社 差動増幅器、それを用いたδσａ／ｄコンバータ、オーディオ信号処理回路、電子機器
US20160246317A1 (en) * 2015-02-24 2016-08-25 Qualcomm Incorporated Power and area efficient method for generating a bias reference

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265857B1 (en) * 1998-12-22 2001-07-24 International Business Machines Corporation Constant current source circuit with variable temperature compensation
CN101178610A (zh) * 2007-12-05 2008-05-14 西安标新电子科技有限责任公司 一种输出可调正、负或零温度系数电流、电压基准的电路
CN102880220A (zh) * 2011-07-12 2013-01-16 联咏科技股份有限公司 温度系数电流触发产生器及温度系数电流触发产生模块

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Publication number Publication date
EP3721314B1 (fr) 2022-01-26
KR20200096586A (ko) 2020-08-12
CN111448531A (zh) 2020-07-24
KR102600881B1 (ko) 2023-11-09
JP2021506006A (ja) 2021-02-18
EP3721314A1 (fr) 2020-10-14
JP7281464B2 (ja) 2023-05-25
WO2019113111A1 (fr) 2019-06-13

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