KR102600881B1 - 프로그래밍 가능한 온도 계수 아날로그 2차 곡률 보상 전압 기준 및 전압 기준 회로를 위한 트림 기술 - Google Patents
프로그래밍 가능한 온도 계수 아날로그 2차 곡률 보상 전압 기준 및 전압 기준 회로를 위한 트림 기술 Download PDFInfo
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- KR102600881B1 KR102600881B1 KR1020207019212A KR20207019212A KR102600881B1 KR 102600881 B1 KR102600881 B1 KR 102600881B1 KR 1020207019212 A KR1020207019212 A KR 1020207019212A KR 20207019212 A KR20207019212 A KR 20207019212A KR 102600881 B1 KR102600881 B1 KR 102600881B1
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- 238000005516 engineering process Methods 0.000 title description 2
- 230000000295 complement effect Effects 0.000 claims abstract description 75
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- 238000000034 method Methods 0.000 claims description 37
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- 101100269674 Mus musculus Alyref2 gene Proteins 0.000 description 5
- 101100026203 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) neg-1 gene Proteins 0.000 description 5
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- 229910044991 metal oxide Inorganic materials 0.000 description 2
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/832,515 US10290330B1 (en) | 2017-12-05 | 2017-12-05 | Programmable temperature coefficient analog second-order curvature compensated voltage reference |
| US15/832,515 | 2017-12-05 | ||
| US15/848,357 | 2017-12-20 | ||
| US15/848,357 US10120399B1 (en) | 2017-12-20 | 2017-12-20 | Trim techniques for voltage reference circuits |
| PCT/US2018/063911 WO2019113111A1 (fr) | 2017-12-05 | 2018-12-04 | Techniques de référence et de compensation de tension à compensation de courbure analogique de second ordre à coefficient de température programmable pour circuits de référence de tension |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200096586A KR20200096586A (ko) | 2020-08-12 |
| KR102600881B1 true KR102600881B1 (ko) | 2023-11-09 |
Family
ID=64902422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207019212A KR102600881B1 (ko) | 2017-12-05 | 2018-12-04 | 프로그래밍 가능한 온도 계수 아날로그 2차 곡률 보상 전압 기준 및 전압 기준 회로를 위한 트림 기술 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP3721314B1 (fr) |
| JP (1) | JP7281464B2 (fr) |
| KR (1) | KR102600881B1 (fr) |
| CN (1) | CN111448531B (fr) |
| WO (1) | WO2019113111A1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114115423B (zh) * | 2021-12-17 | 2022-12-20 | 贵州振华风光半导体股份有限公司 | 一种带数字控制的带隙基准电流源电路 |
| CN115793769B (zh) * | 2023-01-29 | 2023-06-02 | 江苏润石科技有限公司 | 带隙基准滑动温度补偿电路及方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0618012B2 (ja) * | 1983-01-25 | 1994-03-09 | セイコーエプソン株式会社 | 定電圧回路 |
| JP3586073B2 (ja) * | 1997-07-29 | 2004-11-10 | 株式会社東芝 | 基準電圧発生回路 |
| US6265857B1 (en) * | 1998-12-22 | 2001-07-24 | International Business Machines Corporation | Constant current source circuit with variable temperature compensation |
| JP4380343B2 (ja) | 2004-01-30 | 2009-12-09 | ソニー株式会社 | バンドギャップレファレンス回路及び同回路を有する半導体装置 |
| US7127368B2 (en) * | 2004-11-19 | 2006-10-24 | Stmicroelectronics Asia Pacific Pte. Ltd. | On-chip temperature sensor for low voltage operation |
| US7204638B2 (en) * | 2005-05-23 | 2007-04-17 | Etron Technology, Inc. | Precise temperature sensor with smart programmable calibration |
| JP2007065831A (ja) * | 2005-08-30 | 2007-03-15 | Sanyo Electric Co Ltd | 定電流回路 |
| CN100593768C (zh) * | 2007-12-05 | 2010-03-10 | 西安标新电子科技有限责任公司 | 一种输出可调正、负或零温度系数电流、电压基准的电路 |
| US8106707B2 (en) * | 2009-05-29 | 2012-01-31 | Broadcom Corporation | Curvature compensated bandgap voltage reference |
| TWI399631B (zh) * | 2010-01-12 | 2013-06-21 | Richtek Technology Corp | 可快速啟動的低電壓能隙參考電壓產生器 |
| JP5554134B2 (ja) * | 2010-04-27 | 2014-07-23 | ローム株式会社 | 電流生成回路およびそれを用いた基準電圧回路 |
| CN102880220B (zh) * | 2011-07-12 | 2016-01-06 | 联咏科技股份有限公司 | 温度系数电流触发产生器及温度系数电流触发产生模块 |
| JP6234038B2 (ja) | 2013-03-01 | 2017-11-22 | ローム株式会社 | 差動増幅器、それを用いたδσａ／ｄコンバータ、オーディオ信号処理回路、電子機器 |
| US20160246317A1 (en) * | 2015-02-24 | 2016-08-25 | Qualcomm Incorporated | Power and area efficient method for generating a bias reference |
-
2018
- 2018-12-04 WO PCT/US2018/063911 patent/WO2019113111A1/fr active Search and Examination
- 2018-12-04 JP JP2020530690A patent/JP7281464B2/ja active Active
- 2018-12-04 KR KR1020207019212A patent/KR102600881B1/ko active IP Right Grant
- 2018-12-04 CN CN201880078670.1A patent/CN111448531B/zh active Active
- 2018-12-04 EP EP18829584.4A patent/EP3721314B1/fr active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3721314B1 (fr) | 2022-01-26 |
| KR20200096586A (ko) | 2020-08-12 |
| CN111448531A (zh) | 2020-07-24 |
| CN111448531B (zh) | 2022-09-09 |
| JP2021506006A (ja) | 2021-02-18 |
| EP3721314A1 (fr) | 2020-10-14 |
| JP7281464B2 (ja) | 2023-05-25 |
| WO2019113111A1 (fr) | 2019-06-13 |
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