JP7281464B2 - プログラマブル温度係数アナログ二次曲率補償電圧基準、および電圧基準回路のトリミング手法 - Google Patents

プログラマブル温度係数アナログ二次曲率補償電圧基準、および電圧基準回路のトリミング手法 Download PDF

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JP7281464B2
JP7281464B2 JP2020530690A JP2020530690A JP7281464B2 JP 7281464 B2 JP7281464 B2 JP 7281464B2 JP 2020530690 A JP2020530690 A JP 2020530690A JP 2020530690 A JP2020530690 A JP 2020530690A JP 7281464 B2 JP7281464 B2 JP 7281464B2
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current
coupled
fet
voltage
control voltage
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JP2021506006A (ja
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ウマナート アール. カマス,
ジョン ケー. ジェニングス,
エドワード カレン,
イオヌット シー. シカル,
ダラグ ウォルシュ,
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Xilinx Inc
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Xilinx Inc
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Priority claimed from US15/832,515 external-priority patent/US10290330B1/en
Priority claimed from US15/848,357 external-priority patent/US10120399B1/en
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
JP2020530690A 2017-12-05 2018-12-04 プログラマブル温度係数アナログ二次曲率補償電圧基準、および電圧基準回路のトリミング手法 Active JP7281464B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15/832,515 US10290330B1 (en) 2017-12-05 2017-12-05 Programmable temperature coefficient analog second-order curvature compensated voltage reference
US15/832,515 2017-12-05
US15/848,357 2017-12-20
US15/848,357 US10120399B1 (en) 2017-12-20 2017-12-20 Trim techniques for voltage reference circuits
PCT/US2018/063911 WO2019113111A1 (fr) 2017-12-05 2018-12-04 Techniques de référence et de compensation de tension à compensation de courbure analogique de second ordre à coefficient de température programmable pour circuits de référence de tension

Publications (2)

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JP2021506006A JP2021506006A (ja) 2021-02-18
JP7281464B2 true JP7281464B2 (ja) 2023-05-25

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EP (1) EP3721314B1 (fr)
JP (1) JP7281464B2 (fr)
KR (1) KR102600881B1 (fr)
CN (1) CN111448531B (fr)
WO (1) WO2019113111A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114115423B (zh) * 2021-12-17 2022-12-20 贵州振华风光半导体股份有限公司 一种带数字控制的带隙基准电流源电路
CN115793769B (zh) * 2023-01-29 2023-06-02 江苏润石科技有限公司 带隙基准滑动温度补偿电路及方法

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2005216040A (ja) 2004-01-30 2005-08-11 Sony Corp バンドギャップレファレンス回路及び同回路を有する半導体装置
US20100301832A1 (en) 2009-05-29 2010-12-02 Broadcom Corporation Curvature Compensated Bandgap Voltage Reference
JP2014171036A (ja) 2013-03-01 2014-09-18 Rohm Co Ltd 差動増幅器、それを用いたδσa/dコンバータ、オーディオ信号処理回路、電子機器

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JPH0618012B2 (ja) * 1983-01-25 1994-03-09 セイコーエプソン株式会社 定電圧回路
JP3586073B2 (ja) * 1997-07-29 2004-11-10 株式会社東芝 基準電圧発生回路
US6265857B1 (en) * 1998-12-22 2001-07-24 International Business Machines Corporation Constant current source circuit with variable temperature compensation
US7127368B2 (en) * 2004-11-19 2006-10-24 Stmicroelectronics Asia Pacific Pte. Ltd. On-chip temperature sensor for low voltage operation
US7204638B2 (en) * 2005-05-23 2007-04-17 Etron Technology, Inc. Precise temperature sensor with smart programmable calibration
JP2007065831A (ja) * 2005-08-30 2007-03-15 Sanyo Electric Co Ltd 定電流回路
CN100593768C (zh) * 2007-12-05 2010-03-10 西安标新电子科技有限责任公司 一种输出可调正、负或零温度系数电流、电压基准的电路
TWI399631B (zh) * 2010-01-12 2013-06-21 Richtek Technology Corp 可快速啟動的低電壓能隙參考電壓產生器
JP5554134B2 (ja) * 2010-04-27 2014-07-23 ローム株式会社 電流生成回路およびそれを用いた基準電圧回路
CN102880220B (zh) * 2011-07-12 2016-01-06 联咏科技股份有限公司 温度系数电流触发产生器及温度系数电流触发产生模块
US20160246317A1 (en) * 2015-02-24 2016-08-25 Qualcomm Incorporated Power and area efficient method for generating a bias reference

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005216040A (ja) 2004-01-30 2005-08-11 Sony Corp バンドギャップレファレンス回路及び同回路を有する半導体装置
US20100301832A1 (en) 2009-05-29 2010-12-02 Broadcom Corporation Curvature Compensated Bandgap Voltage Reference
JP2014171036A (ja) 2013-03-01 2014-09-18 Rohm Co Ltd 差動増幅器、それを用いたδσa/dコンバータ、オーディオ信号処理回路、電子機器

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Publication number Publication date
EP3721314B1 (fr) 2022-01-26
KR20200096586A (ko) 2020-08-12
CN111448531A (zh) 2020-07-24
KR102600881B1 (ko) 2023-11-09
CN111448531B (zh) 2022-09-09
JP2021506006A (ja) 2021-02-18
EP3721314A1 (fr) 2020-10-14
WO2019113111A1 (fr) 2019-06-13

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