JP7281464B2 - プログラマブル温度係数アナログ二次曲率補償電圧基準、および電圧基準回路のトリミング手法 - Google Patents
プログラマブル温度係数アナログ二次曲率補償電圧基準、および電圧基準回路のトリミング手法 Download PDFInfo
- Publication number
- JP7281464B2 JP7281464B2 JP2020530690A JP2020530690A JP7281464B2 JP 7281464 B2 JP7281464 B2 JP 7281464B2 JP 2020530690 A JP2020530690 A JP 2020530690A JP 2020530690 A JP2020530690 A JP 2020530690A JP 7281464 B2 JP7281464 B2 JP 7281464B2
- Authority
- JP
- Japan
- Prior art keywords
- current
- coupled
- fet
- voltage
- control voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/832,515 US10290330B1 (en) | 2017-12-05 | 2017-12-05 | Programmable temperature coefficient analog second-order curvature compensated voltage reference |
US15/832,515 | 2017-12-05 | ||
US15/848,357 | 2017-12-20 | ||
US15/848,357 US10120399B1 (en) | 2017-12-20 | 2017-12-20 | Trim techniques for voltage reference circuits |
PCT/US2018/063911 WO2019113111A1 (fr) | 2017-12-05 | 2018-12-04 | Techniques de référence et de compensation de tension à compensation de courbure analogique de second ordre à coefficient de température programmable pour circuits de référence de tension |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021506006A JP2021506006A (ja) | 2021-02-18 |
JP7281464B2 true JP7281464B2 (ja) | 2023-05-25 |
Family
ID=64902422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020530690A Active JP7281464B2 (ja) | 2017-12-05 | 2018-12-04 | プログラマブル温度係数アナログ二次曲率補償電圧基準、および電圧基準回路のトリミング手法 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP3721314B1 (fr) |
JP (1) | JP7281464B2 (fr) |
KR (1) | KR102600881B1 (fr) |
CN (1) | CN111448531B (fr) |
WO (1) | WO2019113111A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114115423B (zh) * | 2021-12-17 | 2022-12-20 | 贵州振华风光半导体股份有限公司 | 一种带数字控制的带隙基准电流源电路 |
CN115793769B (zh) * | 2023-01-29 | 2023-06-02 | 江苏润石科技有限公司 | 带隙基准滑动温度补偿电路及方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005216040A (ja) | 2004-01-30 | 2005-08-11 | Sony Corp | バンドギャップレファレンス回路及び同回路を有する半導体装置 |
US20100301832A1 (en) | 2009-05-29 | 2010-12-02 | Broadcom Corporation | Curvature Compensated Bandgap Voltage Reference |
JP2014171036A (ja) | 2013-03-01 | 2014-09-18 | Rohm Co Ltd | 差動増幅器、それを用いたδσa/dコンバータ、オーディオ信号処理回路、電子機器 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0618012B2 (ja) * | 1983-01-25 | 1994-03-09 | セイコーエプソン株式会社 | 定電圧回路 |
JP3586073B2 (ja) * | 1997-07-29 | 2004-11-10 | 株式会社東芝 | 基準電圧発生回路 |
US6265857B1 (en) * | 1998-12-22 | 2001-07-24 | International Business Machines Corporation | Constant current source circuit with variable temperature compensation |
US7127368B2 (en) * | 2004-11-19 | 2006-10-24 | Stmicroelectronics Asia Pacific Pte. Ltd. | On-chip temperature sensor for low voltage operation |
US7204638B2 (en) * | 2005-05-23 | 2007-04-17 | Etron Technology, Inc. | Precise temperature sensor with smart programmable calibration |
JP2007065831A (ja) * | 2005-08-30 | 2007-03-15 | Sanyo Electric Co Ltd | 定電流回路 |
CN100593768C (zh) * | 2007-12-05 | 2010-03-10 | 西安标新电子科技有限责任公司 | 一种输出可调正、负或零温度系数电流、电压基准的电路 |
TWI399631B (zh) * | 2010-01-12 | 2013-06-21 | Richtek Technology Corp | 可快速啟動的低電壓能隙參考電壓產生器 |
JP5554134B2 (ja) * | 2010-04-27 | 2014-07-23 | ローム株式会社 | 電流生成回路およびそれを用いた基準電圧回路 |
CN102880220B (zh) * | 2011-07-12 | 2016-01-06 | 联咏科技股份有限公司 | 温度系数电流触发产生器及温度系数电流触发产生模块 |
US20160246317A1 (en) * | 2015-02-24 | 2016-08-25 | Qualcomm Incorporated | Power and area efficient method for generating a bias reference |
-
2018
- 2018-12-04 WO PCT/US2018/063911 patent/WO2019113111A1/fr active Search and Examination
- 2018-12-04 JP JP2020530690A patent/JP7281464B2/ja active Active
- 2018-12-04 KR KR1020207019212A patent/KR102600881B1/ko active IP Right Grant
- 2018-12-04 CN CN201880078670.1A patent/CN111448531B/zh active Active
- 2018-12-04 EP EP18829584.4A patent/EP3721314B1/fr active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005216040A (ja) | 2004-01-30 | 2005-08-11 | Sony Corp | バンドギャップレファレンス回路及び同回路を有する半導体装置 |
US20100301832A1 (en) | 2009-05-29 | 2010-12-02 | Broadcom Corporation | Curvature Compensated Bandgap Voltage Reference |
JP2014171036A (ja) | 2013-03-01 | 2014-09-18 | Rohm Co Ltd | 差動増幅器、それを用いたδσa/dコンバータ、オーディオ信号処理回路、電子機器 |
Also Published As
Publication number | Publication date |
---|---|
EP3721314B1 (fr) | 2022-01-26 |
KR20200096586A (ko) | 2020-08-12 |
CN111448531A (zh) | 2020-07-24 |
KR102600881B1 (ko) | 2023-11-09 |
CN111448531B (zh) | 2022-09-09 |
JP2021506006A (ja) | 2021-02-18 |
EP3721314A1 (fr) | 2020-10-14 |
WO2019113111A1 (fr) | 2019-06-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10290330B1 (en) | Programmable temperature coefficient analog second-order curvature compensated voltage reference | |
US10642305B2 (en) | High-accuracy CMOS temperature sensor and operating method | |
US8648648B2 (en) | Bandgap voltage reference circuit, system, and method for reduced output curvature | |
US7948304B2 (en) | Constant-voltage generating circuit and regulator circuit | |
CN113168200B (zh) | 利用修整调节的精确带隙参考 | |
KR101357351B1 (ko) | 온―칩 발생된 전압 기준의 다이간 변동을 트리밍하는 방법 및 장치 | |
CN108345338B (zh) | 用于电压生成的系统和方法 | |
CN107305147B (zh) | 温度传感器和具有高准确度的温度传感器校准方法 | |
US20100156519A1 (en) | Electrical system, voltage reference generation circuit, and calibration method of the circuit | |
JP7281464B2 (ja) | プログラマブル温度係数アナログ二次曲率補償電圧基準、および電圧基準回路のトリミング手法 | |
US10454493B2 (en) | Integrated circuit with on chip variation reduction | |
US11088699B1 (en) | Piecewise compensation method for ultra-low temperature drift | |
KR20180017185A (ko) | 일정 전류 제공 장치 및 방법 | |
US20240162912A1 (en) | Piecewise Compensation for Voltage Reference Temperature Drift | |
JP2011215129A (ja) | 温度センサと、半導体装置およびその較正方法 | |
US10120399B1 (en) | Trim techniques for voltage reference circuits | |
US8994356B2 (en) | Method for adjusting a reference voltage based on a band-gap circuit | |
CN110198154A (zh) | 可变电阻电路、振荡电路以及半导体装置 | |
JP2023106298A (ja) | 温度変化においても基準電流または基準電圧を生成する半導体装置 | |
TW202236044A (zh) | 溫度補償電路 | |
CN115114107A (zh) | 集成电路与用于集成电路的温度传感器的操作方法 | |
US11929755B2 (en) | Piecewise compensation for voltage reference temperature drift | |
US11940831B2 (en) | Current generator for memory sensing | |
JP7292339B2 (ja) | 温度補償回路およびこれを用いた半導体集積回路 | |
US20230170914A1 (en) | Digital-to-analog converter circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A529 | Written submission of copy of amendment under article 34 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A529 Effective date: 20200731 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211118 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20221011 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221018 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230118 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230418 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230515 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7281464 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |