CN111316452B - 一种磊晶结构及其制备方法、led - Google Patents
一种磊晶结构及其制备方法、led Download PDFInfo
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Abstract
本发明公开了一种磊晶结构及其制备方法、LED,所述磊晶结构包括:依次设置的蓝宝石衬底、GaN层、缺陷暴露层、缺陷终止层。在蓝宝石衬底上制备缓冲层(GaN层)之后,本发明通过缺陷暴露层,将缓冲层中的缺陷扩大,并暴露出来,然后通过缺陷终止层改变缺陷的方向,终止缺陷继续扩大。因此,在缺陷终止层上继续制备后续层时,后续层不会在缓冲层的缺陷的基础上形成更大的缺陷。
Description
技术领域
本发明涉及磊晶结构技术领域,尤其涉及的是一种磊晶结构及其制备方法、LED。
背景技术
发光二极管(Light-emitting diode,LED)是一种能发光的半导体电子组件,透过三价与五价元素所组成的复合光源,可应用在照明,广告广告牌,手机背光等,目前所使用的材料为InGaN,但目前是在蓝宝石基板(sapphire)透过MOCVD机台成长InGaN为主的蓝绿光LED,但因是不同材料所堆栈(异质磊晶)进而造成许多缺陷(10-9~10-10cm-2)进而影响电子及空穴复合效率而降低整体组件发光效率。即是说,在磊晶制程中大致分为同质磊晶(A材料长在A材料基板上)以及异质磊晶(A材料长在B材料基板上),目前在GaN基LED制程上目前是GaN材料长在蓝宝石基板上,因为GaN和蓝宝石基板的晶格常数不匹配达14%,因此,GaN长在蓝宝石基板上会产生应力,进而产生材料缺陷,这些缺陷将会存在悬浮键,这将会导致影响捕捉电子或空穴,使得电子电洞符合效率变差,而使整体组件发光效率变差。
因此,现有技术还有待于改进和发展。
发明内容
本发明要解决的技术问题在于,针对现有技术的上述缺陷,提供一种磊晶结构及其制备方法、LED,旨在解决现有技术中GaN长在蓝宝石基板上时产生缺陷的问题。
本发明解决技术问题所采用的技术方案如下:
一种磊晶结构,其中,包括:依次设置的蓝宝石衬底、GaN层、缺陷暴露层、缺陷终止层。
所述的磊晶结构,其中,所述GaN层为高温无掺杂GaN层,所述缺陷暴露层为低温无掺杂GaN层或低温无掺杂InGaN层,所述缺陷终止层为岛状掺杂GaN层。
所述的磊晶结构,其中,所述岛状掺杂GaN层为岛状硅掺杂GaN层或岛状镁掺杂GaN层,所述岛状掺杂GaN层的掺杂浓度大于1019cm-3。
所述的磊晶结构,其中,所述磊晶结构还包括:依次设置在所述缺陷终止层上的n型GaN层、发光层、EBL层、p型GaN层。
一种LED,其中,包括:如上述任意一项所述的磊晶结构。
一种如上述任意一项所述的磊晶结构的制备方法,其中,所述方法包括以下步骤:
提供一蓝宝石衬底,并在所述蓝宝石衬底上生长GaN层;
在所述GaN层上生长缺陷暴露层;
在所述缺陷暴露层上生长缺陷终止层。
所述的磊晶结构的制备方法,其中,所述在所述蓝宝石衬底上生长GaN层,包括:
在所述蓝宝石衬底上生长非晶GaN;
对所述非晶GaN进行加热处理得到单晶GaN;其中,所述加热处理的温度为950-1050℃;
以所述单晶GaN为晶种生长得到GaN层。
所述的磊晶结构的制备方法,其中,所述在所述GaN层上生长缺陷暴露层,包括:
在所述GaN层上生长GaN或InGaN得到缺陷暴露层;其中,所述生长GaN或InGaN的温度为600-800℃,V-III比为1000-2500;
所述在所述缺陷暴露层上生长缺陷终止层,包括:
在所述缺陷暴露层上生长掺杂GaN得到缺陷终止层;其中,所述生长掺杂GaN的温度为1000-1100℃,V-III比为4500-7500。
所述的磊晶结构的制备方法,其中,所述生长掺杂GaN中采用硅或镁掺杂,掺杂浓度大于1019cm-3。
所述的磊晶结构的制备方法,其中,所述方法还包括:
在所述缺陷终止层上依次生长n型GaN层、发光层、EBL层、p型GaN层。
有益效果:在蓝宝石衬底上制备缓冲层(GaN层)之后,本发明通过缺陷暴露层,将缓冲层中的缺陷扩大,并暴露出来,然后通过缺陷终止层改变缺陷的方向,终止缺陷继续扩大。因此,在缺陷终止层上继续制备后续层时,后续层不会在缓冲层的缺陷的基础上形成更大的缺陷。
附图说明
图1是现有技术中缺陷的结构示意图。
图2是现有技术中磊晶结构的示意图。
图3是本发明中磊晶结构的示意图。
图4是现有技术中磊晶结构的AFM(原子力显微镜)图。
图5是本发明中磊晶结构的AFM图。
图6是本发明中GaN的晶胞的结构示意图。
图7是本发明中磊晶结构的制备方法的流程图。
具体实施方式
为使本发明的目的、技术方案及优点更加清楚、明确,以下参照附图并举实施例对本发明进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
请同时参阅图3-图6,本发明提供了一种磊晶结构的一些实施例。
需要说明的是,如图1和图2所示,磊晶结构通常包括:依次设置的蓝宝石衬底1、无掺杂GaN层(即缓冲层2)、N型GaN层3、应力释放层4、发光层5(可以采用多量子阱层,MQWs)、EBL层6(即电子阻挡层,如p型AlGaN层)以及p型GaN层7。由于缓冲层2的GaN与蓝宝石衬底1晶格常数不匹配达,在蓝宝石衬底1上生长GaN时,存在应力,因而产生许多缺陷(即V-pits坑),缺陷密度通常为109-1010cm-2(一平方公分的面积内有910~1010个缺陷),在后续层的生长过程中,后续层会照着有V-pits坑的晶格继续成长,因此该V-pits坑将会一直延伸到最外层P-GaN层,且V-pits坑会越变越大。一旦磊晶结构中有缺陷存在,电子及空穴将会走最短路径,即缺陷路径(或者说漏电路径),将不会经过发光层5,而使得磊晶结构不会发光,也会使得起始电压异常偏低,造成组件无法正常操作。
如图3所示,本发明的一种磊晶结构,包括:依次设置的蓝宝石衬底1、GaN层、缺陷暴露层21、缺陷终止层22。
值得说明的是,在蓝宝石衬底1上制备缓冲层2(GaN层)之后,本发明通过缺陷暴露层21,将缓冲层2中的缺陷扩大,并暴露出来,然后通过缺陷终止层22改变缺陷的方向,终止缺陷继续扩大。因此,在缺陷终止层22上继续制备后续层(例如,N型GaN层3、应力释放层4、多量子阱层、电子阻挡层、p型AlGaN层、p型GaN层7)时,后续层不会在缓冲层2的V-pits坑的基础上形成更大的V-pits坑。
如图4所示,现有技术中磊晶结构(包括后续层)的AFM图中有多个V-pits坑,而如图5所示,本发明中磊晶结构(包括后续层)的AFM图中没有V-pits坑。
在本发明的一个较佳实施例中,所述GaN层为高温无掺杂GaN层,所述缺陷暴露层21为低温无掺杂GaN层或低温无掺杂InGaN层,所述缺陷终止层22为岛状掺杂GaN层。
具体地,这里的“高温”和“低温”是相对而言的,也就是说,相对于缺陷暴露层21中的GaN或InGaN来说,缓冲层2中的GaN采用高温制备,具体温度为950-1050℃。相对于缓冲层2中的GaN来说,缺陷暴露层21中的GaN或InGaN采用低温制备,具体温度为600-800℃。采用低温制备GaN或InGaN时,有利于将缓冲层2中的V-pits坑放大,也就是说,可以使V-pits坑的开口更大,将V-pits坑提前暴露出来,便于通过缺陷终止层22将暴露出来的V-pits坑终止。
如图6所示,GaN为六方晶系(晶胞呈六棱柱状),GaN在c轴和a轴上的生长速率是既定的,缺陷终止层22采用掺杂GaN形成岛状结构,也即岛状掺杂GaN层,由于这里的GaN进行了掺杂,GaN在c轴和a轴上的生长速率不相同,随着掺杂浓度的提高,a轴的生长速率逐渐升高,c轴的生长速率逐渐降低。在磊晶结构中,c轴垂直与蓝宝石衬底1,a轴平行于蓝宝石衬底1,由于掺杂的GaN的a轴的生长速率提高,c轴的生长速率降低,掺杂的GaN倾向侧长,向水平方向扩展,V-pits坑随着掺杂的GaN倾向侧长而转弯,因此不会延伸到后续层中,不会形成更大的V-pits坑。
在本发明的一个较佳实施例中,所述岛状掺杂GaN层为岛状硅掺杂GaN层或岛状镁掺杂GaN层,所述岛状掺杂GaN层的掺杂浓度大于1019cm-3。
具体地,硅源可以采用硅烷(SiH4),镁源采用二茂镁(Cp2Mg),硅或镁的掺杂浓度大于1019cm-3,也就是说,在一立方公分体积内,Si原子取代Ga原子数目大于1020个,因Si外围电子数目比Ga原子数目多一个电子,因此,掺杂GaN为主要电子提供材料。
在本发明的一个较佳实施例中,如图3所示,所述磊晶结构还包括:依次设置在所述缺陷终止层22上的N型GaN层3、发光层5、EBL层6、p型GaN层7。当然在N型GaN层3和发光层5之间还可以设置应力释放层4。
基于上述磊晶结构,本发明还提供了一种LED的较佳实施例:
本发明实施例所述一种LED,包括如上述任意一实施例所述的磊晶结构。
基于上述磊晶结构,本发明还提供了一种磊晶结构的制备方法的较佳实施例:
如图7所示,本发明实施例所述一种磊晶结构的制备方法,包括以下步骤:
步骤S100、提供一蓝宝石衬底1,并在所述蓝宝石衬底1上生长GaN层。
具体地,步骤S100包括:
步骤S110、提供一蓝宝石衬底1。
步骤S120、在所述蓝宝石衬底1上生长非晶GaN。
步骤S130、对所述非晶GaN进行加热处理得到单晶GaN;其中,所述加热处理的温度为950-1050℃。
步骤S140、以所述单晶GaN为晶种生长得到GaN层。
步骤S200、在所述GaN层上生长缺陷暴露层21。
具体地,步骤S200包括:
步骤S210、在所述GaN层上生长GaN或InGaN得到缺陷暴露层21;其中,所述生长GaN或InGaN的温度为600-800℃,V-III比(N源和Ga+In源的摩尔比)为1000-2500,生长压力为300-400torr。这里的N源采用氨气,Ga源采用三甲基镓或三乙基镓,In源采用三甲基铟。
具体地,缺陷暴露层21为低温无掺杂GaN层或低温无掺杂InGaN层,低温无掺杂InGaN层具体成分为InxGa1-xN(0.2≤x≤0.35)。缺陷暴露层21的厚度为0.5-1μm。
步骤S300、在所述缺陷暴露层21上生长缺陷终止层22。
具体地,步骤S300包括:
步骤S310、在所述缺陷暴露层21上生长掺杂GaN得到缺陷终止层22;其中,所述生长掺杂GaN的温度为1000-1100℃,V-III比为4500-7500。
具体地,缺陷暴露层21的厚度为1-1.5μm。所述生长掺杂GaN中采用硅或镁掺杂,掺杂浓度大于1019cm-3。掺杂浓度可以根据时间的延长增大,也就是说,随着缺陷暴露层21的生长,提高掺杂源的浓度。
步骤S400、在所述缺陷终止层22上依次生长N型GaN层3、发光层5、EBL层6、p型GaN层7。
具体地,也可以在N型GaN层3与发光层5之间生长应力释放层4。
综上所述,本发明所提供的一种磊晶结构及其制备方法、LED,所述磊晶结构包括:依次设置的蓝宝石衬底、GaN层、缺陷暴露层、缺陷终止层。在蓝宝石衬底上制备缓冲层(GaN层)之后,本发明通过缺陷暴露层,将缓冲层中的缺陷扩大,并暴露出来,然后通过缺陷终止层改变缺陷的方向,终止缺陷继续扩大。因此,在缺陷终止层上继续制备后续层时,后续层不会在缓冲层的缺陷的基础上形成更大的缺陷。
应当理解的是,本发明的应用不限于上述的举例,对本领域普通技术人员来说,可以根据上述说明加以改进或变换,所有这些改进和变换都应属于本发明所附权利要求的保护范围。
Claims (10)
1.一种磊晶结构,其特征在于,包括:依次设置的蓝宝石衬底、GaN层、缺陷暴露层、缺陷终止层;所述缺陷暴露层用于扩大所述GaN层的缺陷的开口,所述缺陷终止层用于改变所述缺陷的方向,以终止所述缺陷继续扩大;所述缺陷为V形坑。
2.根据权利要求1所述的磊晶结构,其特征在于,所述GaN层为高温无掺杂GaN层,所述缺陷暴露层为低温无掺杂GaN层或低温无掺杂InGaN层,所述缺陷终止层为岛状掺杂GaN层。
3.根据权利要求2所述的磊晶结构,其特征在于,所述岛状掺杂GaN层为岛状硅掺杂GaN层或岛状镁掺杂GaN层,所述岛状掺杂GaN层的掺杂浓度大于1019cm-3。
4.根据权利要求1所述的磊晶结构,其特征在于,所述磊晶结构还包括:依次设置在所述缺陷终止层上的n型GaN层、发光层、EBL层、p型GaN层。
5.一种LED,其特征在于,包括:如权利要求1-4任意一项所述的磊晶结构。
6.一种如权利要求1-4任意一项所述的磊晶结构的制备方法,其特征在于,所述方法包括以下步骤:
提供一蓝宝石衬底,并在所述蓝宝石衬底上生长GaN层;
在所述GaN层上生长缺陷暴露层;
在所述缺陷暴露层上生长缺陷终止层。
7.根据权利要求6所述的磊晶结构的制备方法,其特征在于,所述在所述蓝宝石衬底上生长GaN层,包括:
在所述蓝宝石衬底上生长非晶GaN;
对所述非晶GaN进行加热处理得到单晶GaN;其中,所述加热处理的温度为950-1050℃;
以所述单晶GaN为晶种生长得到GaN层。
8.根据权利要求6所述的磊晶结构的制备方法,其特征在于,所述在所述GaN层上生长缺陷暴露层,包括:
在所述GaN层上生长GaN或InGaN得到缺陷暴露层;其中,所述生长GaN或InGaN的温度为600-800℃,V-III比为1000-2500;
所述在所述缺陷暴露层上生长缺陷终止层,包括:
在所述缺陷暴露层上生长掺杂GaN得到缺陷终止层;其中,所述生长掺杂GaN的温度为1000-1100℃,V-III比为4500-7500。
9.根据权利要求8所述的磊晶结构的制备方法,其特征在于,所述生长掺杂GaN中采用硅或镁掺杂,掺杂浓度大于1019cm-3。
10.根据权利要求6所述的磊晶结构的制备方法,其特征在于,所述方法还包括:
在所述缺陷终止层上依次生长n型GaN层、发光层、EBL层、p型GaN层。
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