CN111316445A - Igbt功率器件及其制造方法 - Google Patents

Igbt功率器件及其制造方法 Download PDF

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CN111316445A
CN111316445A CN201980005569.8A CN201980005569A CN111316445A CN 111316445 A CN111316445 A CN 111316445A CN 201980005569 A CN201980005569 A CN 201980005569A CN 111316445 A CN111316445 A CN 111316445A
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power device
semiconductor substrate
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CN111316445B (zh
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刘伟
刘磊
毛振东
袁愿林
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Suzhou Oriental Semiconductor Co Ltd
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    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
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    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
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  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

一种IGBT功率器件，包括：p型集电极区；位于所述p型集电极区之上的n型漂移区；多个第一沟槽，每个所述第一沟槽的下方均设有一个第二沟槽；位于所述第一沟槽和所述第二沟槽中的栅极结构；位于相邻的两个所述第一沟槽之间的p型体区；位于所述p型体区内的n型发射极区；位于相邻的两个所述第二沟槽之间的n型的空穴电荷阻挡区。

Description

PCT国内申请，说明书已公开。

Claims (9)

  1. PCT国内申请，权利要求书已公开。
CN201980005569.8A 2018-02-09 2019-01-30 Igbt功率器件及其制造方法 Active CN111316445B (zh)

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CN201810132904.8A CN110137249A (zh) 2018-02-09 2018-02-09 Igbt功率器件及其制造方法
CN2018101329048 2018-02-09
PCT/CN2019/073915 WO2019154219A1 (zh) 2018-02-09 2019-01-30 Igbt功率器件及其制造方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114335170A (zh) * 2020-09-30 2022-04-12 苏州东微半导体股份有限公司 半导体功率器件

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Publication number Priority date Publication date Assignee Title
CN113299750A (zh) * 2020-02-21 2021-08-24 苏州东微半导体股份有限公司 半导体功率器件
CN114256342A (zh) * 2020-09-24 2022-03-29 比亚迪半导体股份有限公司 半导体元胞结构、igbt元胞结构、半导体结构及其制备方法
CN112331716B (zh) * 2020-09-27 2022-10-28 广东美的白色家电技术创新中心有限公司 一种半导体器件及其制作方法、家用电器
CN112271134B (zh) * 2020-10-20 2021-10-22 苏州东微半导体股份有限公司 半导体功率器件的制造方法
CN115332263A (zh) * 2021-05-11 2022-11-11 苏州东微半导体股份有限公司 半导体器件的制造方法
CN113838919B (zh) * 2021-09-23 2023-10-24 电子科技大学 三维沟槽栅电荷存储型igbt及其制作方法
CN113838921B (zh) * 2021-09-23 2023-04-25 电子科技大学 一种三维沟槽电荷存储型igbt及其制作方法
CN116264242A (zh) * 2021-12-15 2023-06-16 苏州东微半导体股份有限公司 Igbt器件
CN116936357A (zh) * 2022-04-08 2023-10-24 苏州东微半导体股份有限公司 Igbt器件的制造方法

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US20110062513A1 (en) * 2009-09-16 2011-03-17 Wei-Chieh Lin Overlapping trench gate semiconductor device and manufacturing method thereof
CN103035521A (zh) * 2012-11-05 2013-04-10 上海华虹Nec电子有限公司 实现少子存储层沟槽型igbt的工艺方法
JP2013120809A (ja) * 2011-12-07 2013-06-17 Hitachi Ltd 半導体装置及びそれを用いた電力変換装置
CN104103694A (zh) * 2014-07-25 2014-10-15 苏州东微半导体有限公司 一种沟槽型绝缘栅场效应晶体管及其制造方法
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US20160204238A1 (en) * 2012-03-28 2016-07-14 Infineon Technologies Americas Corp. IGBT Having Deep Gate Trench
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CN205488135U (zh) * 2016-03-23 2016-08-17 无锡新洁能股份有限公司 具有载流子存储结构的igbt器件
CN106252396A (zh) * 2015-06-03 2016-12-21 瑞萨电子株式会社 半导体器件及其制造方法
CN106486530A (zh) * 2015-08-31 2017-03-08 株式会社东芝 半导体装置及其制造方法
CN107634094A (zh) * 2017-08-29 2018-01-26 中山汉臣电子科技有限公司 一种绝缘栅双极性晶体管结构及其制造方法

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JP4817827B2 (ja) * 2005-12-09 2011-11-16 株式会社東芝 半導体装置
US9076838B2 (en) * 2013-09-13 2015-07-07 Infineon Technologies Ag Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing
KR20150061202A (ko) * 2013-11-27 2015-06-04 삼성전기주식회사 전력 반도체 소자
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JP2017208413A (ja) * 2016-05-17 2017-11-24 株式会社デンソー 半導体装置

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CN1705136A (zh) * 2004-05-31 2005-12-07 三菱电机株式会社 绝缘栅型半导体器件
US20110062513A1 (en) * 2009-09-16 2011-03-17 Wei-Chieh Lin Overlapping trench gate semiconductor device and manufacturing method thereof
JP2013120809A (ja) * 2011-12-07 2013-06-17 Hitachi Ltd 半導体装置及びそれを用いた電力変換装置
US20160204238A1 (en) * 2012-03-28 2016-07-14 Infineon Technologies Americas Corp. IGBT Having Deep Gate Trench
CN103035521A (zh) * 2012-11-05 2013-04-10 上海华虹Nec电子有限公司 实现少子存储层沟槽型igbt的工艺方法
JP2014207326A (ja) * 2013-04-12 2014-10-30 三菱電機株式会社 半導体装置および半導体装置の製造方法
CN104103694A (zh) * 2014-07-25 2014-10-15 苏州东微半导体有限公司 一种沟槽型绝缘栅场效应晶体管及其制造方法
CN106252396A (zh) * 2015-06-03 2016-12-21 瑞萨电子株式会社 半导体器件及其制造方法
CN106486530A (zh) * 2015-08-31 2017-03-08 株式会社东芝 半导体装置及其制造方法
CN205488135U (zh) * 2016-03-23 2016-08-17 无锡新洁能股份有限公司 具有载流子存储结构的igbt器件
CN105789290A (zh) * 2016-04-26 2016-07-20 电子科技大学 一种沟槽栅igbt器件及其制造方法
CN107634094A (zh) * 2017-08-29 2018-01-26 中山汉臣电子科技有限公司 一种绝缘栅双极性晶体管结构及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114335170A (zh) * 2020-09-30 2022-04-12 苏州东微半导体股份有限公司 半导体功率器件

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WO2019154219A1 (zh) 2019-08-15
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US20210036135A1 (en) 2021-02-04
US11450763B2 (en) 2022-09-20

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