CN111247629A - 部件连接方法 - Google Patents

部件连接方法 Download PDF

Info

Publication number
CN111247629A
CN111247629A CN201880068321.1A CN201880068321A CN111247629A CN 111247629 A CN111247629 A CN 111247629A CN 201880068321 A CN201880068321 A CN 201880068321A CN 111247629 A CN111247629 A CN 111247629A
Authority
CN
China
Prior art keywords
region
coating film
regions
connection
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201880068321.1A
Other languages
English (en)
Other versions
CN111247629B (zh
Inventor
根岸征央
中子伟夫
川名祐贵
石川大
须镰千绘
江尻芳则
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of CN111247629A publication Critical patent/CN111247629A/zh
Application granted granted Critical
Publication of CN111247629B publication Critical patent/CN111247629B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0425—Copper-based alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/102—Metallic powder coated with organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
    • B22F2007/047—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method non-pressurised baking of the paste or slurry containing metal powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00—Metallic composition of the powder or its coating
    • B22F2301/10—Copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2304/00—Physical aspects of the powder
    • B22F2304/10—Micron size particles, i.e. above 1 micrometer up to 500 micrometer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
    • H01L2224/27312—Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
    • H01L2224/2732—Screen printing, i.e. using a stencil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
    • H01L2224/27416—Spin coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
    • H01L2224/27418—Spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
    • H01L2224/27422—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form by dipping, e.g. in a solder bath
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
    • H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
    • H01L2224/2744—Lamination of a preform, e.g. foil, sheet or layer by transfer printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2746—Plating
    • H01L2224/27462—Electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/2901—Shape
    • H01L2224/29011—Shape comprising apertures or cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/2901—Shape
    • H01L2224/29012—Shape in top view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/2901—Shape
    • H01L2224/29012—Shape in top view
    • H01L2224/29013—Shape in top view being rectangular or square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/2901—Shape
    • H01L2224/29012—Shape in top view
    • H01L2224/29014—Shape in top view being circular or elliptic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/2901—Shape
    • H01L2224/29012—Shape in top view
    • H01L2224/29015—Shape in top view comprising protrusions or indentations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/29078—Plural core members being disposed next to each other, e.g. side-to-side arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29247—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29364—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29369—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/2949—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H01L2224/3001—Structure
    • H01L2224/3003—Layer connectors having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H01L2224/3005—Shape
    • H01L2224/30051—Layer connectors having different shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H01L2224/301—Disposition
    • H01L2224/3012—Layout
    • H01L2224/3013—Square or rectangular array
    • H01L2224/30131—Square or rectangular array being uniform, i.e. having a uniform pitch across the array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H01L2224/301—Disposition
    • H01L2224/3012—Layout
    • H01L2224/3013—Square or rectangular array
    • H01L2224/30132—Square or rectangular array being non uniform, i.e. having a non uniform pitch across the array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H01L2224/301—Disposition
    • H01L2224/3012—Layout
    • H01L2224/3014—Circular array, i.e. array with radial symmetry
    • H01L2224/30141—Circular array, i.e. array with radial symmetry being uniform, i.e. having a uniform pitch across the array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H01L2224/301—Disposition
    • H01L2224/3012—Layout
    • H01L2224/3014—Circular array, i.e. array with radial symmetry
    • H01L2224/30142—Circular array, i.e. array with radial symmetry being non uniform, i.e. having a non uniform pitch across the array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H01L2224/301—Disposition
    • H01L2224/3012—Layout
    • H01L2224/3014—Circular array, i.e. array with radial symmetry
    • H01L2224/30143—Circular array, i.e. array with radial symmetry covering only portions of the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H01L2224/301—Disposition
    • H01L2224/3012—Layout
    • H01L2224/3015—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
    • H01L2224/30151—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry being uniform, i.e. having a uniform pitch across the array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H01L2224/301—Disposition
    • H01L2224/3012—Layout
    • H01L2224/3015—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
    • H01L2224/30152—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry being non uniform, i.e. having a non uniform pitch across the array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H01L2224/301—Disposition
    • H01L2224/3012—Layout
    • H01L2224/3015—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
    • H01L2224/30154—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry covering only portions of the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H01L2224/301—Disposition
    • H01L2224/3012—Layout
    • H01L2224/30177—Combinations of arrays with different layouts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H01L2224/301—Disposition
    • H01L2224/3012—Layout
    • H01L2224/30179—Corner adaptations, i.e. disposition of the layer connectors at the corners of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/404—Connecting portions
    • H01L2224/40475—Connecting portions connected to auxiliary connecting means on the bonding areas
    • H01L2224/40499—Material of the auxiliary connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75272—Oven
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75283—Means for applying energy, e.g. heating means by infrared heating, e.g. infrared heating lamp
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/83054—Composition of the atmosphere
    • H01L2224/83075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H01L2224/83204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83208—Compression bonding applying unidirectional static pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8321—Applying energy for connecting using a reflow oven
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/83224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/8323—Polychromatic or infrared lamp heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/8484—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Powder Metallurgy (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Non-Disconnectible Joints And Screw-Threaded Joints (AREA)

Abstract

该部件连接方法包括：以规定的印刷图案(9)在各部件(2)、(3)的连接区域(5)形成连接用的铜糊剂的涂膜(8)的印刷工序；经由涂膜(8)层叠各部件(2)、(3)的层叠工序；以及烧结涂膜(8)而形成铜烧结体(4)，并利用该铜烧结体(4)连接各部件(2)、(3)的烧结工序，在印刷工序中，在印刷图案(9)上形成形成涂膜(8)的涂膜形成区域(10)和未形成涂膜(8)的涂膜非形成区域(20)，涂膜形成区域(10)被以连结在连接区域(5)的边缘部(6)相互分离的各点(A)～(D)的方式设置的多个线状区域(21a)～(21c)分割成多个同心状的区域(12a)～(12c)以及多个放射状的区域(13a)、(13b)。

Description

部件连接方法
技术领域
本公开涉及部件连接方法。
背景技术
以往，已知有利用铜烧结体连接第一部件与第二部件的部件连接方法(例如，参照专利文献1)。作为该部件连接方法，有通过丝网印刷或点胶(Dispense)印刷等印刷连接用的铜糊剂的涂膜的方法。具体而言，首先，在印刷工序中，在第一部件与第二部件的连接区域上通过印刷形成连接用的铜糊剂的涂膜。接着，在层叠工序中，隔着涂膜层叠第一部件与第二部件。然后，在烧结工序中，通过涂膜的烧结形成将各部件彼此连接的铜烧结体。
现有技术文献
专利文献
专利文献1：日本特开2008－244242号公报
发明内容
发明要解决的课题
在上述以往的部件连接方法中，在印刷工序中，在连接区域的整体形成涂膜，在之后的层叠工序中，隔着涂膜层叠各部件。此时，成为涂膜覆盖各部件的连接面(涂膜侧的表面)的整体的状态，因此涂膜的面积大，空气容易进入涂膜的内部。另外，当各部件的连接面有具有凹凸时，因该凹凸，空气也容易进入涂膜与各部件之间。这样，若在空气进入的状态下在烧结工序中对涂膜进行烧结，则在通过烧结形成的铜烧结体的内部、或铜烧结体与各部件之间，空气作为空隙(void)而残留。空隙成为各部件相互连接而成的连接体的结构缺陷，可能成为使各部件的连接性降低的重要因素。
本公开目的在于，提供一种能够抑制铜烧结体与各部件之间的空隙的部件连接方法。
用来解决课题的手段
本公开的部件连接方法，利用铜烧结体连接第一部件与第二部件，其中，该部件连接方法包括：印刷工序，以规定的印刷图案在第一部件与第二部件的连接区域形成连接用的铜糊剂的涂膜；层叠工序，将第一部件与第二部件隔着涂膜而层叠；以及烧结工序，烧结涂膜而形成铜烧结体，利用该铜烧结体连接第一部件与第二部件，在印刷工序中，在印刷图案上形成涂膜形成区域和涂膜非形成区域，该涂膜形成区域形成涂膜，该涂膜非形成区域不形成涂膜，涂膜形成区域被以连结在连接区域的边缘部相互分离的第一点与第二点的方式设置的一个或多个涂膜非形成区域分割成多个区域，涂膜形成区域中的多个区域包括从连接区域的中心侧朝向边缘部以放射状排列的区域、以及绕连接区域的中心以同心状排列的区域中的至少一方。
在该部件连接方法中，在印刷工序中形成的印刷图案由形成涂膜的涂膜形成区域和未形成涂膜的涂膜非形成区域构成。另外，涂膜形成区域被以连结在连接区域的边缘部相互分离的第一点与第二点的方式设置的一个或多个涂膜非形成区域分割成多个区域。由此，在层叠工序中隔着涂膜层叠各部件时，涂膜非形成区域作为使空气向连接区域外逸出的逸出部而发挥功能。涂膜形成区域的多个区域因层叠工序中的各部件的自重或按压力的施加等而扩张，从而使涂膜非形成区域消失。因而，在烧结工序中，成为对连接区域大致均匀地涂覆有铜糊剂的涂膜的状态，能够抑制在烧结后的铜烧结体的内部、或铜烧结体与各部件之间残留空隙。而且，在该部件连接方法中，由于涂膜形成区域中的多个区域包括以放射状排列的区域以及以同心状排列的区域中的至少一方，因此能够使涂膜在连接区域均匀地扩张，并且能够通过涂膜非形成区域使空气高效地向连接区域外逸出。因而，能够充分地确保空隙的抑制效果。
另外，也可以是，涂膜形成区域中的多个区域包括以放射状排列的区域以及以同心状排列的区域这两方。在该情况下，能够使涂膜在连接区域更均匀地扩张，并且能够通过涂膜非形成区域使空气更高效地向连接区域外逸出。
另外，也可以是，涂膜形成区域中的多个区域包括以放射状排列的区域与以同心状排列的区域从连接区域的中心侧朝向边缘部以放射状交替地配置的部分。在该情况下，能够使涂膜在连接区域更均匀地扩张，并且能够通过涂膜非形成区域使空气更高效地向连接区域外逸出。
另外，也可以是，连接区域具有多个边，涂膜非形成区域以连结位于互不相同的边的第一点与第二点的方式设置。在该情况下，能够通过涂膜非形成区域使空气更高效地向连接区域外逸出。
另外，也可以是，连接区域是矩形状的区域，涂膜形成区域包括与连接区域的角部对应地配置的区域。在该情况下，能够防止连接区域的角部的涂膜的不足。因而，能够更可靠地形成在连接区域大致均匀地涂覆有铜糊剂的涂膜的状态。
另外，也可以是，在涂膜形成区域中的多个区域中，越是配置于靠近连接区域的边缘部的位置的区域，其面积越大。在该情况下，能够防止连接区域的边缘部侧的涂膜的不足。因而，能够更可靠地形成在连接区域大致均匀地涂覆有铜糊剂的涂膜的状态。
另外，也可以是，第一部件以及所述第二部件中的至少一方为半导体元件。通过将上述部件连接方法应用于半导体元件的连接，能够实现可靠性高的半导体装置的制造。
发明效果
根据本公开，能够提供一种可以抑制铜烧结体的内部、或铜烧结体与各部件之间的空隙的部件连接方法。
附图说明
图1是通过第一实施方式的部件连接方法连接而成的连接体的示意剖面图。
图2是表示在第一实施方式的印刷工序中形成的印刷图案的俯视图。
图3是对以往与本实施方式中的印刷图案进行比较而示出的图。
图4是针对以往以及本实施方式分别示出使用超声波观察装置观察烧结后的铜烧结体与第一部件的界面的结果的照片。
图5是表示第二实施方式的印刷图案的俯视图。
图6是表示第三实施方式的印刷图案的俯视图。
图7是表示第四实施方式的印刷图案的俯视图。
图8是表示第五实施方式的印刷图案的俯视图。
图9是表示第六实施方式的印刷图案的俯视图。
图10是表示第七实施方式的印刷图案的俯视图。
图11是表示第八实施方式的印刷图案的俯视图。
具体实施方式
以下，参照添附的附图对本发明的优选实施方式进行详细说明。另外，在附图的说明中对相同的要素标注相同的附图标记，并省略重复的说明。在本说明书中，所例示的材料只要没有特别说明，则能够单独使用一种或组合使用两种以上。关于连接用金属糊剂中的各成分的含量，在连接用金属糊剂中存在多个相当于各成分的物质的情况下，只要没有特别说明，则是指存在于连接用金属糊剂中的该多个物质的合计量。使用“～”表示的数值范围是指分别包含“～”的前后所记载的数值作为最小值以及最大值的范围。在本说明书中阶段性地记载的数值范围中，某一阶段的数值范围的上限值或下限值也可以替换为其他阶段的数值范围的上限值或下限值。
(第一实施方式)
首先，对通过第一实施方式的部件连接方法连接而成的连接体的一个例子进行说明。图1是通过第一实施方式的部件连接方法连接而成的连接体1的示意剖面图。
如图1所示，连接体1具有部件2(第一部件)、部件3(第二部件)、以及将部件2与部件3连接的铜烧结体4。在本实施方式中，所谓“连接”，包括“接合”、即连接并接合。作为各部件2、3，例如可列举IGBT、二极管、肖特基势垒二极管等、MOS－FET、晶闸管、逻辑电路、传感器、模拟集成电路、LED、半导体激光器、发送器等半导体元件、引线框、金属板粘贴陶瓷基板(例如DBC)、LED封装等半导体元件搭载用基材、铜带、金属块、端子等供电用部件、散热板、水冷板等。
铜烧结体4通过对分散有铜粒子的铜糊剂进行烧结而形成。铜烧结体4也可以包含铜以外的成分(例如铜以外的金属、合金、金属间化合物、无机化合物、树脂)。作为烧结方法，能够使用无加压烧结、加压烧结(单轴加压烧结、HIP烧结)、通电烧结等。在本实施方式的铜烧结体4为半导体装置的连接用的情况下，铜烧结体4优选用无加压烧结来制作。无加压烧结与加压烧结相比能够提高生产率，从半导体元件不易损伤的方面考虑是优选的。
铜烧结体4的铜的致密度优选为40体积％以上且95体积％以下，更优选为50体积％以上且95体积％以下，进一步优选为60体积％以上且95体积％以下。若铜的致密度在上述范围内，则能够充分确保烧结体自身的机械特性、热传导性以及电传导性。另外，在连接部件时容易获得缓和应力的效果，能够具有较高的连接可靠性。
铜烧结体4中的铜的致密度例如能够通过以下的步骤求出。首先，将铜烧结体4切割成长方体。接下来，用游标卡尺或外形形状测定装置测定铜烧结体4的纵向、横向的长度，用膜厚计测定厚度，从而计算铜烧结体4的体积。根据切割出的铜烧结体4的体积和由精密天平测定的铜烧结体的质量，求出表观密度M1(g/cm3)。使用求出的M1和铜的理论密度8.96g/cm3，根据下述式(A)求出铜烧结体中的铜的致密度(体积％)。
铜烧结体中的铜的致密度(体积％)＝[(M1)/8.96]×100…(A)
接下来，对本实施方式的部件连接方法进行说明。
本实施方式的部件连接方法是将部件2与部件3连接的部件连接方法，并且包括以下的印刷工序、层叠工序以及烧结工序。首先，在印刷工序中，在部件2与部件3的连接区域，通过印刷涂覆连接用的铜糊剂，以规定的印刷图案形成该铜糊剂的涂膜。连接区域在俯视部件2与部件3时，为各部件2、3相互连接的区域。作为印刷方法，例如能够使用丝网印刷、转印印刷、胶版印刷、射流打印法、分配器、喷射分配器、针式分配器、螺杆分配器、缺角轮涂布机(comma coater)、狭缝涂布机、模涂布机、凹版涂布机、狭缝涂布、凸版印刷、凹版印刷、照相凹版(gravure)印刷、模版印刷、软平版印刷、棒涂、施涂器(applicator)、颗粒沉积法、喷涂器、旋涂器、浸涂器、或电沉积涂装等。
接着，在层叠工序中，隔着涂膜层叠部件2与部件3。在层叠工序中，可以设为仅将各部件2、3的自重施加于涂膜的无加压，也可以在各部件2、3的自重基础上，对涂膜施加0.01MPa以下、优选为0.005MPa以下的按压力。若对涂膜施加的按压力在上述范围内，则不需要特别的加压装置，因此不会损害成品率，能够实现空隙的减少、提高芯片剪切强度以及连接可靠性。作为涂膜受到0.01MPa以下的按压力的方法，可列举在部件2、3上载置重物的方法等。
在之后的烧结工序中，例如通过对涂膜进行加热处理，来对涂膜进行烧结，从而形成铜烧结体4。在加热处理中，例如能够使用加热板，暖风干燥机、暖风加热炉、氮气干燥机、红外线干燥机、红外线加热炉、远红外线加热炉、微波加热装置、激光加热装置、电磁加热装置、加热器加热装置、蒸气加热炉等。在烧结工序中，在对涂膜施加各部件2、3的自重、或上述范围内的按压力的状态下，对涂膜进行烧结。
接下来，参照图2，对在本实施方式的印刷工序中形成的印刷图案9进行详细说明。图2是表示由本实施方式的印刷工序形成的印刷图案9的俯视图。如图2所示，部件2与部件3的连接区域5也是供印刷图案9印刷的印刷区域。连接区域5是具有相互对置的边6a、6b、以及在与边6a、6b的对置方向正交的方向上对置的边6c、6d的矩形状的区域。连接区域5的边缘部6由边6a～6d构成。
连接区域5形成于层叠工序中相互对置的部件2的连接面与部件3的连接面之间。另外，在图2中，示出了连接区域5的边缘部6位于比部件2的连接面2a更靠内侧的方式，但连接区域5的边缘部6也可以与连接面2a的边缘部一致。印刷图案9形成于连接区域5。印刷图案9由形成涂膜8的涂膜形成区域10、以及未形成涂膜8的涂膜非形成区域20构成。
涂膜形成区域10包括分割区域11和角区域14。分割区域11包括从连接区域5的中心P侧朝向边缘部6以放射状排列的放射区域12、以及绕连接区域5的中心P以同心圆状或同心多边形状配置的同心区域13。中心P是指，以距边缘部6的各边6a、6b的距离彼此同等、并且距各边6c、6d的距离彼此同等的方式定位的点。在本实施方式中，所谓“同等”，除了相等之外，也可以为使包含测定误差或预先设定的范围内的微差等的值同等。以放射状排列例如是指，沿着朝向从连接区域5的中心P侧朝向边缘部6的径向(以下，简单称为“径向”。)的虚拟直线而配置。以同心圆状或多边形状配置例如是指，沿着以连接区域5的中心P为共享的中心的多个虚拟同心圆或虚拟多边形而配置。
具体而言，放射区域12包括分别沿着连接区域5中的从中心P朝向各角部R1、R2、R3、R4的4条虚拟直线各配置有3个的12个区域12a～12c。即，放射区域12包含虚拟直线量(4组)的沿着相同的虚拟直线的3个区域12a～12c。沿着相同的虚拟直线的各区域12a～12c在径向上相互分离地排列。
同心区域13包括分别沿着彼此共享中心P并且距中心P的距离互不相同的虚拟同心圆以及虚拟多边形各配置有4个的8个区域13a、13b。即，同心区域13包括沿着相同的虚拟同心圆的4个区域13a、以及沿着相同的虚拟多边形的4个区域13b。虚拟多边形位于比虚拟同心圆更靠远离中心P侧的边缘部6的位置。4个区域13a以及4个区域13b分别在周向上相互分离地排列。
与位于中心P侧的区域12b的面积相比，位于边缘部6侧的区域12c的面积更大。另外，与位于中心P侧的各区域13a的面积相比，位于边缘部6侧的各区域13b的面积更大。即，关于分割区域11所含的多个区域中的区域12b、12c以及区域13a、13b(区域12a以外的区域)，越是配置于靠近连接区域5的边缘部6的位置的区域，面积越大。
在涂膜形成区域10中，放射区域12与同心区域13包括从连接区域5的中心P侧朝向边缘部6以放射状交替地配置的部分。即，在涂膜形成区域10中，在径向上相邻的各区域13a与各区域13b之间分别存在区域12c。这些放射区域12的区域12c发挥用涂膜8填埋在同心区域13中在径向上相邻的各区域13a与各区域13b之间的作用。
角区域14是与连接区域5的各角部R1～R4对应地配置的区域。角区域14包括与角部R1对应地配置的区域14a、与角部R2对应地配置的区域14b、与角部R3对应地配置的区域14c、以及与角部R4对应地配置的区域14d。各区域14a～14d位于比同心区域13中的最外的各区域13b靠边缘部6侧的位置。各区域14a～14d被定位成用涂膜8填埋比各区域13b靠边缘部6侧的位置。
涂膜非形成区域20包括多个线状区域21，该线状区域21以连结在连接区域5的边缘部6相互分离的第一点与第二点的方式设置，并且将涂膜形成区域10分割成多个区域(在本实施方式中，为各区域12a～12c、各区域13a、13b)。线状区域21在层叠工序中，作为使空气向连接区域5外逸出的逸出部而发挥功能。线状区域21包括：以连结边缘部6的点A与点B的方式设置，使空气从点A以及点B的至少一方侧逸出的线状区域21a；以连结边缘部6的点C与点D的方式设置，使空气从点C以及点D侧的至少一方侧逸出的线状区域21b；以及以连结于线状区域21a、21b的方式设置，使空气经由线状区域21a、21b逸出的线状区域21c。
线状区域21a在连接区域5内从边6a到边6b呈直线状延伸。线状区域21a位于分割区域11所含的各区域中的在边6a、6c的对置方向上对置的区域之间(各区域12a之间、各区域13a之间、各区域13b之间)。
线状区域21b在连接区域5内从边6c到边6d呈直线状延伸。线状区域21b位于分割区域11所含的各区域中的在边6c、6d的对置方向上对置的区域之间(各区域12a之间、各区域13a之间、各区域13b之间)。
线状区域21c以距中心P侧的距离不同的同心圆状或同心多边形状排列有多个(在本实施方式中，为4个)。线状区域21c位于分割区域11所含的各区域中的在径向上对置的区域之间(各区域12a与各区域12b之间、各区域12b与各区域13a之间、各区域13a与各区域12c之间、各区域12c与各区域13b之间)。
接下来，对本实施方式的印刷工序中所使用的连接用的铜糊剂的详细情况进行说明。
(连接用铜糊剂)
本实施方式的连接用铜糊剂能够包含金属粒子和分散介质。
作为本实施方式的金属粒子，可列举亚微铜粒子、微铜粒子、除它们以外的铜粒子、其他金属粒子等。在本说明书中，亚微铜粒子是指粒径或最大径为0.1μm以上且小于1.0μm的粒子，微铜粒子是指粒径或最大径为1.0μm以上且50μm以下的粒子。
(亚微铜粒子)
作为亚微铜粒子，可列举包含粒径为0.12μm以上且0.8μm以下的铜粒子的物质，例如，能够使用体积平均粒径0.12μm以上且0.8μm以下的亚微铜粒子。若亚微铜粒子的体积平均粒径为0.12μm以上，则容易获得亚微铜粒子的合成成本的抑制、良好的分散性、表面处理剂的使用量的抑制的效果。若亚微铜粒子的体积平均粒径为0.8μm以下，则容易获得亚微铜粒子的烧结性优异的效果。从进一步起到上述效果的观点出发，亚微铜粒子的体积平均粒径可以为0.15μm以上且0.8μm以下，可以为0.15μm以上且0.6μm以下，可以为0.2μm以上且0.5μm以下，也可以为0.3μm以上且0.45μm以下。
另外，在本申请说明书中，体积平均粒径是指，50％体积平均粒径。在求解铜粒子的体积平均粒径的情况下，能够通过如下方法等求出：利用光散射法粒度分布测定装置(例如，岛津纳米粒子径分布测定装置(SALD－7500nano，株式会社岛津制作所制))，对使用分散剂将从成为原料的铜粒子、或连接用铜糊剂去除了挥发成分的干燥铜粒子分散在分散介质中而得的物质进行测定。在使用光散射法粒度分布测定装置的情况下，作为分散介质，能够使用己烷、甲苯、α-松油醇等。
亚微铜粒子能够包含10质量％以上的粒径为0.12μm以上且0.8μm以下的铜粒子。从连接用铜糊剂的烧结性的观点出发，亚微铜粒子能够包含20质量％以上的粒径为0.12μm以上且0.8μm以下的铜粒子，能够包含30质量％以上的粒径为0.12μm以上且0.8μm以下的铜粒子，能够包含100质量％的粒径为0.12μm以上且0.8μm以下的铜粒子。若亚微铜粒子中的粒径为0.12μm以上且0.8μm以下的铜粒子的包含比例为20质量％以上，则能够进一步提高铜粒子的分散性，进一步抑制粘度的上升、糊剂浓度的降低。
铜粒子的粒径能够通过下述方法来求出。铜粒子的粒径例如能够根据SEM像来计算。用刮刀将铜粒子的粉末载置于SEM用的碳带上，作为SEM用样品。通过SEM装置以5000倍观察该SEM用样品。利用图像处理软件对与该SEM像的铜粒子外接的四边形作图，将其一边设为该粒子的粒径。
以金属粒子的总质量为基准，亚微铜粒子的含量可以为20质量％以上且90质量％以下，可以为30质量％以上且90质量％以下，可以为35质量％以上且85质量％以下，也可以为40质量％以上且80质量％以下。若亚微铜粒子的含量在上述范围内，则容易形成上述本实施方式的铜烧结体。
以亚微铜粒子的质量以及薄片状微铜粒子的质量的合计为基准，亚微铜粒子的含量也可以为20质量％以上且90质量％以下。若亚微铜粒子的上述含量为20质量％以上，则能够充分填充薄片状微铜粒子之间，容易形成上述本实施方式的铜烧结体。若亚微铜粒子的上述含量为90质量％以下，由于能够充分抑制烧结连接用铜糊剂时的体积收缩，因此容易形成上述本实施方式的铜烧结体。从进一步起到上述效果的观点出发，以亚微铜粒子的质量以及薄片状微铜粒子的质量的合计为基准，亚微铜粒子的含量可以为30质量％以上且85质量％以下，可以为35质量％以上且85质量％以下，也可以为40质量％以上且80质量％以下。
亚微铜粒子的形状并未被特别限定。作为亚微铜粒子的形状，例如可列举球状、块状、针状、薄片状、大致球状以及它们的凝聚体。从分散性以及填充性的观点出发，亚微铜粒子的形状可以为球状、大致球状、薄片状，从燃烧性、分散性、与薄片状微铜粒子的混合性等观点出发，也可以是球状或大致球状。在本说明书中，所谓“薄片状”包含板状、鳞片状等平板状的形状。
从分散性、填充性以及与薄片状微铜粒子的混合性的观点出发，亚微铜粒子的纵横比可以为5以下，也可以为3以下。在本说明书中，所谓“纵横比”是指粒子的长边/厚度。粒子的长边以及厚度的测定例如能够根据粒子的SEM像来求出。
亚微铜粒子也可以用特定的表面处理剂来处理。作为特定的表面处理剂，例如可列举碳原子数8～16的有机酸。作为碳原子数8～16的有机酸，例如可列举辛酸、甲基庚酸、乙基己酸、丙基戊酸、壬酸、甲基辛酸、乙基庚酸、丙基己酸、癸酸、甲基壬酸、乙基辛酸、丙基庚酸、丁基己酸、十一烷酸、甲基癸酸、乙基壬酸、丙基辛酸、丁基庚酸、月桂酸、甲基十一烷酸、乙基癸酸、丙基壬酸、丁基辛酸、戊基庚酸、十三烷酸、甲基十二烷酸、乙基十一烷酸、丙基癸酸、丁基壬酸、戊基辛酸、肉豆蔻酸、甲基十三烷酸、乙基十二烷酸、丙基十一烷酸、丁基癸酸、戊基壬酸、己基辛酸、十五烷酸、甲基十四烷酸、乙基十三烷酸、丙基十二烷酸、丁基十一烷酸、戊基癸酸、己基壬酸、棕榈酸、甲基十五烷酸、乙基十四烷酸、丙基十三烷酸、丁基十二烷酸、戊基十一烷酸、己基癸酸、庚基壬酸、甲基环己烷羧酸、乙基环己烷羧酸、丙基环己烷羧酸、丁基环己烷羧酸、戊基环己烷羧酸、己基环己烷羧酸、庚基环己烷羧酸、辛基环己烷羧酸、壬基环己烷羧酸等饱和脂肪酸；辛烯酸、壬烯酸、甲基壬烯酸、癸烯酸、十一碳烯酸、十二碳烯酸、十三碳烯酸、十四碳烯酸、肉豆蔻脑酸、十五烯酸、十六烯酸、棕榈油酸、十六碳烯酸等不饱和脂肪酸；对苯二甲酸、均苯四酸、邻苯氧基苯甲酸、甲基苯甲酸、乙基苯甲酸、丙基苯甲酸、丁基苯甲酸、戊基苯甲酸、己基苯甲酸、庚基苯甲酸、辛基苯甲酸、壬基苯甲酸等芳香族羧酸。有机酸可以单独使用一种，也可以组合使用两种以上。通过将这样的有机酸与上述亚微铜粒子组合，呈现能够兼顾亚微铜粒子的分散性与烧结时的有机酸的脱离性的趋势。
表面处理剂的处理量可以为0.07质量％以上且2.1质量％以下，可以为0.10质量％以上且1.6质量％以下，也可以为0.2质量％以上且1.1质量％以下。
作为亚微铜粒子，能够使用市售的物质。作为市售的亚微铜粒子，例如可列举Cu－C－40(福田金属箔粉工业株式会社制，体积平均粒径0.6μm)、EFC－20LML(福田金属箔粉工业株式会社制、数平均粒径0.2μm)、CH－0200(三井金属矿业株式会社制，体积平均粒径0.36μm)、HT－14(三井金属矿业株式会社制，体积平均粒径0.41μm)、CT－500(三井金属矿业株式会社制，体积平均粒径0.72μm)、Tn－Cu100(Taiyo Nippon Sanso Corporation制，体积平均粒径0.12μm)。
(微铜粒子)
作为微铜粒子，可列举包含粒径为2μm以上且50μm以下的铜粒子的物质，例如，能够使用体积平均粒径为2μm以上且50μm以下的铜粒子。若微铜粒子的体积平均粒径在上述范围内，则能够充分减少烧结连接用铜糊剂时的体积收缩，容易确保烧结连接用铜糊剂而制造的连接体的连接强度。在将连接用铜糊剂用于半导体元件的连接的情况下，若微铜粒子的体积平均粒径为上述范围内，则呈现半导体装置显示出良好的芯片剪切强度以及连接可靠性的趋势。从进一步起到上述效果的观点出发，微铜粒子的体积平均粒径可以为3μm以上且20μm以下，也可以为3μm以上且10μm以下。
微铜粒子能够包含50质量％以上的粒径为2μm以上且50μm以下的铜粒子。从在连接体内的取向、加强效果、连接糊剂的填充性的观点出发，微铜粒子能够包含70质量％以上的粒径为2μm以上且50μm以下的铜粒子，能够包含80质量％以上的粒径为2μm以上且50μm以下的铜粒子，能够包含100质量％的粒径为2μm以上且50μm以下的铜粒子。从抑制连接不良的观点出发，微铜粒子例如优选不包含最大径超过20μm的粒子等超过连接厚度的尺寸的粒子。
以金属粒子的总质量为基准，微铜粒子的含量可以为10质量％以上且90质量％以下，可以为15质量％以上且65质量％以下，也可以为20质量％以上且60质量％以下。若微铜粒子的含量在上述范围内，容易确保烧结连接用铜糊剂而制造的连接体的连接强度。在将连接用铜糊剂用于半导体元件的连接的情况下，若微铜粒子的含量在上述范围内，则呈现半导体装置显示出良好的芯片剪切强度以及连接可靠性的趋势。
以金属粒子的总质量为基准，亚微铜粒子的含量以及微铜粒子的含量的合计能够设为80质量％以上。若亚微铜粒子的含量以及微铜粒子的含量的合计在上述范围内，则能够充分减少烧结连接用铜糊剂时的体积收缩，容易确保烧结连接用铜糊剂而制造的连接体的连接强度。在将连接用铜糊剂用于半导体元件的连接的情况下，呈现半导体装置显示出良好的芯片剪切强度以及连接可靠性的趋势。从进一步起到上述效果的观点出发，以金属粒子的总质量为基准，亚微铜粒子的含量以及微铜粒子的含量的合计可以为90质量％以上，可以为95质量％以上，也可以为100质量％。
微铜粒子的形状并未被特别限定。作为微铜粒子的形状，例如可列举球状、块状、针状、薄片状、大致球状以及它们的凝聚体。其中，微铜粒子的形状也优选为薄片状。通过使用薄片状的微铜粒子，连接用铜糊剂内的微铜粒子相对于连接面大致平行地取向，从而能够抑制使连接用铜糊剂烧结时的体积收缩，容易确保烧结连接用铜糊剂而制造的连接体的连接强度。在将连接用铜糊剂用于半导体元件的连接的情况下，呈现半导体装置显示出良好的芯片剪切强度以及连接可靠性的趋势。从进一步起到上述效果的观点出发，其中，作为薄片状的微铜粒子，纵横比可以为4以上，也可以为6以上。
在微铜粒子中，表面处理剂的处理的有无并没有特别限定。从分散稳定性以及耐氧化性的观点出发，微铜粒子也可以用表面处理剂进行处理。表面处理剂也可以在连接时被去除。作为这样的表面处理剂，例如可列举：棕榈酸、硬脂酸、花生酸、油酸等脂肪族羧酸；对苯二甲酸、均苯四酸、邻苯氧基苯甲酸等芳香族羧酸；鲸蜡醇、硬脂醇、异冰片基环己醇、四甘醇等脂肪族醇；对苯基苯酚等芳香族醇；辛胺、十二烷胺、硬脂胺等烷基胺；硬脂腈、癸烷腈等脂肪族腈；烷基烷氧基硅烷等硅烷偶联剂；聚乙二醇、聚乙烯醇、聚乙烯基吡咯烷酮、有机硅低聚物等高分子处理剂等。表面处理剂可以单独使用一种，也可以组合使用两种以上。表面处理剂的处理量通常为0.001质量％以上。
在仅由上述亚微铜粒子调制连接用铜糊剂的情况下，由于分散介质伴随着干燥的体积收缩以及烧结收缩较大，因此在烧结连接用铜糊剂时容易从被粘面剥离，在半导体元件等连接中难以获得充分的芯片剪切强度以及连接可靠性。通过同时采用亚微铜粒子与微铜粒子，可抑制使连接用铜糊剂烧结时的体积收缩，连接体能够具有充分的连接强度。在将连接用铜糊剂用于半导体元件的连接的情况下，可获得半导体装置表现出良好的芯片剪切强度以及连接可靠性的效果。
作为本实施方式的微铜粒子，能够使用市售的物质。作为市售的微铜粒子，例如可列举MA－C025(三井金属矿业株式会社制，体积平均粒径7.5μm)、MA－C025KFD(三井金属矿业株式会社制，体积平均粒径5μm)、MA－C08JF(三井金属矿业株式会社制，体积平均粒径13.2μm)、3L3(福田金属箔粉工业株式会社制，体积平均粒径6.0μm)、2L3(福田金属箔粉工业株式会社制，体积平均粒径10.0μm)、4L3(福田金属箔粉工业株式会社制，体积平均粒径3.0μm)、C3(福田金属箔粉工业株式会社制，体积平均粒径37.0μm)、E3(福田金属箔粉工业株式会社制，体积平均粒径37.0μm)、1110F(三井金属矿业株式会社制，体积平均粒径3.8μm)、1400YP(三井金属矿业株式会社制，体积平均粒径5.2μm)、1400YF(三井金属矿业株式会社制，体积平均粒径6.8μm)、1050YP(三井金属矿业株式会社制，体积平均粒径0.94μm)、1050YF(三井金属矿业株式会社制，体积平均粒径1.7μm)、Cu－HWQ3.0μm(福田金属箔粉工业株式会社制，体积平均粒径3.0μm)。
(铜粒子以外的其他金属粒子)
作为金属粒子，也可以包含亚微铜粒子以及微铜粒子以外的其他金属粒子，例如也可以包含镍、银、金、钯、铂等粒子。其他金属粒子的体积平均粒径可以为0.01μm以上且10μm以下，可以为0.01μm以上且5μm以下，也可以为0.05μm以上且3μm以下。在包含其他金属粒子的情况下，从获得充分的连接性的观点出发，以金属粒子的总质量为基准，其含量可以小于20质量％，也可以为10质量％以下。也可以不包含其他金属粒子。其他金属粒子的形状并未被特别限定。
通过包含铜粒子以外的金属粒子，能够获得固溶或分散有多种金属的烧结体，因此烧结体的屈服应力、疲劳强度等机械特性被改善，容易提高连接可靠性。另外，通过添加多种金属粒子，连接用铜糊剂的烧结体能够对特定的被粘体具有充分的连接强度。在将连接用铜糊剂用于半导体元件的连接的情况下，容易提高半导体装置的芯片剪切强度以及连接可靠性。
(分散介质)
分散介质并未被特别限定，也可以是挥发性的物质。作为挥发性的分散介质，例如可列举：戊醇、己醇、庚醇、辛醇、癸醇、乙二醇、、二甘醇、丙二醇、丁二醇、α－松油醇、异冰片烷基环己醇(MTPH)等一元和多元醇类；乙二醇丁基醚、乙二醇苯基醚、二乙二醇甲基醚、二乙二醇乙基醚、二乙二醇丁基醚、二乙二醇异丁基醚、二乙二醇己基醚、三乙二醇甲基醚、二乙二醇二甲基醚、二乙二醇二乙基醚、二乙二醇二丁基醚、二乙二醇丁基甲基醚、二乙二醇异丙基甲基醚、三乙二醇二甲基醚、三乙二醇丁基甲基醚、丙二醇丙基醚、二丙二醇甲基醚、二丙二醇乙基醚、二丙二醇丙基醚、二丙二醇丁基醚、二丙二醇二甲基醚、三丙二醇甲基醚、三丙二醇二甲基醚等醚类；乙二醇乙基醚乙酸酯、乙二醇丁基醚乙酸酯、二乙二醇乙基醚乙酸酯、二乙二醇丁基醚乙酸酯、二丙二醇甲基醚乙酸酯(DPMA)、乳酸乙酯、乳酸丁酯、三丁酸甘油酯、硬脂酸丁酯、角鲨烷、癸二酸二丁酯、己二酸双(2－乙基己基)酯、γ－丁内酯、碳酸亚丙酯等酯类；N－甲基－2－吡咯烷酮、N，N－二甲基乙酰胺、N，N－二甲基甲酰胺等酸酰胺；环己酮、辛烷、壬烷、癸烷、十一烷等脂肪族烃；苯、甲苯、二甲苯等芳香族烃；具有碳原子数1～18的烷基的硫醇类；具有碳原子数5～7的环烷基的硫醇类。作为具有碳原子数1～18的烷基的硫醇类，例如可列举乙基硫醇、正丙基硫醇、异丙基硫醇、正丁基硫醇、异丁基硫醇、叔丁基硫醇、戊基硫醇、己基硫醇以及十二碳烷基硫醇。作为具有碳原子数5～7的环烷基的硫醇类，例如可列举环戊硫醇、环己基硫醇以及环庚基硫醇。
在将金属粒子的总质量设为100质量份时，分散介质的含量也可以为5～50质量份。若分散介质的含量在上述范围内，则能够将连接用铜糊剂调整为更适当的粘度，并且不易阻碍铜粒子的烧结。
(添加剂)
在连接用铜糊剂中，也可以根据需要，适当添加非离子系表面活性剂、氟系表面活性剂等润湿改善剂；有机硅油等消泡剂；无机离子交换体等离子捕捉剂等。
接下来，与以往的部件连接方法进行比较，对本实施方式的部件连接方法的作用以及效果进行说明。以往的部件连接方法与本实施方式的部件连接方法相比，不同点在于印刷工序中的印刷图案不同。图3是对以往与本实施方式中的印刷图案进行比较而示出的图。图3的(a)示出了以往的印刷图案100，图3的(b)示出了本实施方式的印刷图案9。图4是针对以往以及本实施方式分别表示使用超声波观察装置来观察烧结后的铜烧结体4与部件2的界面的结果的照片。图4的(a)示出了图3的(a)的以往的印刷图案100的情况下的结果，图4的(b)示出了图3的(b)的本实施方式的印刷图案9的情况下的结果。在图4中，用虚线表示连接区域5。
如图3的(a)所示，在以往的部件连接方法的印刷工序中，所形成的印刷图案100成为沿着连接区域5的边缘部6的矩形状。即，在连接区域5的整体形成有涂膜8。因此，当在之后的层叠工序中隔着涂膜8层叠各部件2、3时，覆盖各部件2、3的连接面的整体的涂膜8的面积变大，空气容易进入涂膜8的内部。另外，当各部件2、3的连接面具有凹凸时，因该凹凸，空气也容易进入涂膜8与各部件2、3之间。这样，若在的空气进入的状态下在烧结工序中对涂膜8进行烧结，则在通过烧结形成的铜烧结体4的内部、或铜烧结体4与各部件2、3之间，空气作为空隙(void)而残留。例如，如图4的(a)所示那样，在铜烧结体4与部件2之间残留有由白色表示的空隙。空隙成为各部件2、3相互连接而成的连接体1的结构缺陷，可能成为使各部件2、3的连接性降低的重要因素。
与此相对，如图3的(b)所示，在本实施方式的部件连接方法中，在印刷工序中形成的印刷图案9由形成涂膜8的涂膜形成区域10、以及未形成涂膜8的涂膜非形成区域20构成。另外，涂膜形成区域10被线状区域21a～21c(线状区域21)分割成多个区域12a～12c、13a、13b。由此，在层叠工序中，进入到涂膜8的内部的空气以及进入到涂膜8与各部件2、3之间的空气从各区域12a～12c、13a、13b直接流向线状区域21a、21b，或者从各区域12a～12c、13a、13b经由线状区域21c流向线状区域21a、21b。流向线状区域21a、21b的空气能够从连接区域5的边缘部6向连接区域5外排出。多个区域12a～12c、13a、13b、14a～14d由于层叠工序中的各部件2、3的自重或按压力的施加等而扩张，从而使涂膜非形成区域20消失。因而，在烧结工序中，成为对连接区域5大致均匀地涂覆有铜糊剂的涂膜8的状态，能够抑制在烧结后的铜烧结体4的内部、或铜烧结体4与各部件2、3之间残留空隙。例如，如图4的(b)所示，在铜烧结体4与部件2之间未残留空隙。其结果，能够提高各部件2、3的连接性。
另外，本实施方式的印刷图案9与以往的印刷图案相比，需要加厚印刷厚度，但通过调整印刷体积，能够为与以往的印刷图案100同等的印刷量。由此，能够以与以往的印刷图案100同等的涂覆量来实现空隙的抑制。
在本实施方式中，涂膜形成区域10包括以放射状排列的放射区域12、以及以同心圆状或同心多边形状排列的同心区域13。由此，能够通过线状区域21a～21c使空气高效地向连接区域5外逸出，充分地确保空隙的抑制效果。
另外，在本实施方式中，在涂膜形成区域10中，包括放射区域12与同心区域13从连接区域5的中心P侧朝向边缘部6以放射状交替地配置的部分。由此，能够防止在径向上相邻各区域13a与各区域13b之间的涂膜8的不足。因而，能够更可靠地形成在连接区域5大致均匀地涂覆有铜糊剂的涂膜8的状态。另外，在本实施方式中，连接区域5具有多个边6a～6d，涂膜非形成区域20被设为连结位于互不相同的边的点A、B以及点C、D。通过这种构成，能够使涂膜8在连接区域5更均匀地扩张，并且能够通过涂膜非形成区域20使空气更高效地向连接区域外逸出。
而且，在本实施方式中，涂膜形成区域10包括与连接区域5的各角部R1～R4对应地配置的角区域14。由此，能够防止连接区域5的各角部R1～R4中的涂膜8的不足。另外，关于分割区域11所含的多个区域12b、12c、13a、13b，越是配置于靠近连接区域5的边缘部6的位置的区域，面积越大。由此，能够防止连接区域5的边缘部6侧的涂膜8的不足。
通过将本实施方式的部件连接方法应用于半导体元件的连接，能够实现可靠性高的半导体装置的制造。
(第二实施方式)
接下来，参照图5，对在第二实施方式的部件连接方法的印刷工序中形成的印刷图案9A进行说明。图5是表示第二实施方式的印刷图案9A的俯视图。在第二实施方式中，如图5所示，涂膜形成区域10仅包括分割区域11，不包括角区域14，并且在分割区域11中仅包括从连接区域5的中心侧朝向边缘部6以放射状排列的放射区域12。
具体而言，放射区域12包括分别沿着从连接区域5中的中心P朝向边缘部6的8条虚拟直线各配置有5个的40个区域12d～12h。即，放射区域12包括虚拟直线量(8组)的沿着相同的虚拟直线的5个区域12d～12h。沿着相同的虚拟直线的各区域12d～12h在径向上相互分离地排列。
沿着相同的虚拟直线的各区域12d～12h的面积按区域12d、区域12e、区域12f、区域12g、区域12h的顺序变大。即，关于分割区域11所含的多个区域12d～12h，越是配置于靠近连接区域5的边缘部6的位置的区域，面积越大。
在本实施方式中，涂膜非形成区域20也包括以连结在连接区域5的边缘部6相互分离的第一点与第二点的方式设置、并且将涂膜形成区域10分割成多个区域(在本实施方式中，为各区域12d～12h)的多个线状区域21。由此，当在层叠工序中隔着涂膜8层叠各部件2、3时，线状区域21作为使空气向连接区域5外逸出的逸出部而发挥功能。因而，与上述实施方式相同，能够抑制在烧结后的铜烧结体4的内部、或铜烧结体4与各部件2、3之间残留空隙。
(第三实施方式)
接下来，参照图6，对在第三实施方式的部件连接方法的印刷工序中形成的印刷图案9B进行说明。图6是表示第三实施方式的印刷图案9B的俯视图。在第三实施方式中，如图6所示，在分割区域11中仅包括绕连接区域5的中心P以同心圆状配置的同心区域13。
具体而言，同心区域13包括分别沿着彼此共享中心P并且距中心P的距离互不相同的4个虚拟同心圆各配置有4个的16个区域13c～13f。即，同心区域13包括虚拟同心圆量(4组)的沿着相同的虚拟同心圆的4个各区域13c～13f。沿着相同的虚拟同心圆的各区域13c～13f在周向上相互分离地排列。
各区域13c～13f的面积按区域13c、区域13d、区域13e、区域13f的顺序变大。即，关于分割区域11所含的多个区域13c～13f，越是配置于靠近连接区域5的边缘部6的位置的区域，面积越大。
在本实施方式中，涂膜非形成区域20也包括以连结在连接区域5的边缘部6相互分离的第一点与第二点的方式设置、并且将涂膜形成区域10分割成多个区域(在本实施方式中，为各区域13c～13f)的多个线状区域21。由此，当在层叠工序中隔着涂膜8层叠各部件2、3时，线状区域21作为使空气向连接区域5外逸出的逸出部而发挥功能。因而，上述实施方式相同，能够抑制在烧结后的铜烧结体4的内部、或铜烧结体4与各部件2、3之间残留空隙。
(第四实施方式)
接下来，参照图7，对在第四实施方式的部件连接方法的印刷工序中形成的印刷图案9C进行说明。图7是表示第四实施方式的印刷图案9C的俯视图。在第四实施方式中，如图7所示，在分割区域11中仅包括以格子状排列的格子区域15。以格子状排列例如是指，配置于连接区域5内的网眼状的等间隔的虚拟水平线以及虚拟垂直线的交点。在本实施方式中，在连接区域5内，格子区域15包括6行×6列的共36个矩形状的区域15a。
在本实施方式中，涂膜非形成区域20也包括以连结在连接区域5的边缘部6相互分离的第一点与第二点的方式设置、并且将涂膜形成区域10分割成多个区域(在本实施方式中，为各区域15a)的多个线状区域21。由此，当在层叠工序中隔着涂膜8层叠各部件2、3时，线状区域21作为使空气向连接区域5外逸出的逸出部而发挥功能。因而，与上述实施方式相同，能够抑制在烧结后的铜烧结体4的内部、或铜烧结体4与各部件2、3之间残留空隙。在本实施方式中，也能够通过多个线状区域21使空气高效地向连接区域5外逸出，并能够充分地确保空隙的抑制效果。
(第五实施方式)
接下来，参照图8，对在第五实施方式的部件连接方法的印刷工序中形成的印刷图案9D进行说明。图8是表示第五实施方式的印刷图案9D的俯视图。在第五实施方式中，如图8所示，在分割区域11中仅包括4个三角状区域16。各三角状区域16使一个顶点朝向连接区域5的中心P而从中心P朝向连接区域5的边缘部6扩展。
在本实施方式中，涂膜非形成区域20也包括以连结在连接区域5的边缘部6相互分离的第一点与第二点的方式设置、并且将涂膜形成区域10分割成多个区域(在本实施方式中，为各三角状区域16)的多个线状区域21。由此，当在层叠工序中隔着涂膜8层叠各部件2、3时，线状区域21作为使空气向连接区域5外逸出的逸出部而发挥功能。因而，与上述实施方式相同，能够抑制在烧结后的铜烧结体4的内部、或铜烧结体4与各部件2、3之间残留空隙。
(第六实施方式)
接下来，参照图9，对在第六实施方式的部件连接方法的印刷工序中形成的印刷图案9E进行说明。图9是表示第六实施方式的印刷图案9E的俯视图。在第六实施方式中，如图9所示，在分割区域11中仅包括格子区域17。格子区域17与上述第四实施方式相同，是以格子状排列的区域。在本实施方式中，格子区域17包括10行×10列的共100个圆形状的区域17a。区域17a的内侧可以如图示那样用涂膜8填埋，也可以没有涂膜8而开口。
在本实施方式中，涂膜非形成区域20也包括以连结在连接区域5的边缘部6相互分离的第一点与第二点的方式设置、并且将涂膜形成区域10分割成多个区域(在本实施方式中，为各区域17a)的多个线状区域21。因而，与上述实施方式相同，在本实施方式中，也能够通过多个线状区域21使空气高效地向连接区域5外逸出，并能够充分地确保空隙的抑制效果。
(第七实施方式)
接下来，参照图10，对在第七实施方式的部件连接方法的印刷工序中形成的印刷图案9F进行说明。图10是表示第七实施方式的印刷图案9F的俯视图。在第七实施方式中，如图10所示，在分割区域11中仅包括格子区域18。格子区域18与上述第四实施方式相同，是以格子状排列的区域。在本实施方式中，格子区域18包括4行×4列的共16个十字状的区域18a。区域18a的内侧可以如图示那样用涂膜8填埋，也可以没有涂膜8而开口。
在本实施方式中，涂膜非形成区域20也包括以连结在连接区域5的边缘部6相互分离的第一点与第二点的方式设置、并且将涂膜形成区域10分割成多个区域(在本实施方式中，为各区域18a)的多个线状区域21。因而，与上述实施方式相同，在本实施方式中，也能够通过多个线状区域21使空气高效地向连接区域5外逸出，并能够充分地确保空隙的抑制效果。
(第八实施方式)
接下来，参照图11，对在第八实施方式的部件连接方法的印刷工序中形成的印刷图案9G进行说明。图11是表示第八实施方式的印刷图案9G的俯视图。在第八实施方式中，如图11所示，涂膜形成区域10包括分割区域11和角区域14。分割区域11包括放射区域12、同心区域13、以及角附近区域19。
在本实施方式中，放射区域12包括分别沿着从连接区域5中的中心P朝向边缘部6的8条虚拟直线各配置有4个的32个区域12m、12n、12o、12p。即，放射区域12包括虚拟直线量(8组)的沿着相同的虚拟直线的4个区域12m～12p。沿着相同的虚拟直线的各区域12m～12p在径向上相互分离地排列。
同心区域13包括彼此共享连接区域5中的中心P、并且距中心P的距离互不相同的7个同心圆状的区域13m、13n、13o、13p、13q、13r、13s、13t。在区域13m与区域13n之间存在区域12m。区域13m与区域13n通过区域12m而相互连接。在区域13o与区域13p之间存在区域12n。区域13o与区域13p通过区域12n而相互连接。在区域13q与区域13r之间存在区域12o。区域13q与区域13r通过区域12o而相互连接。在区域13s与区域13t之间存在区域12p。区域13s与区域13t通过区域12p而相互连接。
区域13n与区域13o之间可以如图示那样分离，也可以用涂膜8填埋。区域13p与区域13q之间可以如图示那样分离，也可以用涂膜8填埋。区域13r与区域13s之间可以如图示那样分离，也可以用涂膜8填埋。
角附近区域19在对应的角部R1～R4的附近分别配置有4个。角附近区域19位于比同心区域13中的最外的区域13t靠外侧(边缘部6侧)的位置。各角附近区域19包括大致梯形形状的开口区域19a、以及配置于开口区域19a的内部的开口内区域19b。开口区域19a包括：位于比区域13t靠外侧(边缘部6侧)的圆弧部19a1；位于比圆弧部19a1靠外侧(边缘部6侧)、并且比圆弧部19a1短的圆弧部19a2；以及沿着边缘部6延伸并连接圆弧部19a1与圆弧部19a2的一对边部19a3。圆弧部19a1与圆弧部19a2分别沿着彼此共享中心P并且距中心P的距离互不相同的虚拟同心圆而相互大致平行。开口区域19a可以如图示那样开口，也可以用涂膜8填埋。
开口内区域19b配置于从中心P朝向对应的角部R1～R4的虚拟直线上、并且是比放射区域12中的最外的区域12p靠外侧(边缘部6侧)的位置。开口内区域19b位于圆弧部19a1与圆弧部19a2之间，并将圆弧部19a1与圆弧部19a2连接。
在本实施方式中，角区域14中的各区域14a～14d位于比角附近区域19靠外侧(边缘部6侧)的位置。即，各区域14a～14d位于从中心P朝向对应的角部R1～R4的虚拟直线上的最靠近边缘部6的位置。
在本实施方式中，同心区域13包括7个同心圆状的区域13m～13t，以用涂膜8填埋区域13m与区域13n之间、区域13o与区域13p之间、区域13q与区域13r之间以及区域13s与区域13t之间的方式，定位放射区域12中的各区域12m～12p。以用涂膜8填埋比同心区域13中的最外的区域13t靠外侧的位置的方式，定位角附近区域19。在角附近区域19中，以用涂膜8填埋开口区域19a内的方式，定位开口内区域19b。以用涂膜8填埋比角附近区域19靠外侧的位置的方式，定位角区域14。由此，各区域12m～12p、13m～13t、19a、19b、14a～14d因层叠工序中的各部件2、3的自重或按压力的施加等而扩张，从而各区域12m～12p、13m～13t、19a、19b、14a～14d彼此容易连接，使涂膜非形成区域20可靠地消失。
在本实施方式中，线状区域21形成于区域13t与开口区域19a的圆弧部19a1之间。即，涂膜非形成区域20包括分割成区域13t与开口区域19a的圆弧部19a1的4个线状区域21。由此，当在层叠工序中隔着涂膜8层叠各部件2、3时，线状区域21作为使空气向连接区域5外逸出的逸出部而发挥功能。因而，与上述实施方式相同，能够抑制在烧结后的铜烧结体4的内部、或铜烧结体4与各部件2、3之间残留空隙。
以上，对本实施方式的各种实施方式进行了说明，但本发明并不限定于上述实施方式，也可以在不变更各权利要求所记载的的主旨的范围内进行变形，或应用于其他实施方式。
例如，沿着相同的虚拟直线的各区域12a～12c以及沿着相同的虚拟直线的各区域12d～12h也可以不在径向上相互分离地排列，而在径向上相互连结而连续地延伸。另外，沿着相同的虚拟同心圆的各区域13a、沿着相同的虚拟多边形的各区域13b、以及沿着相同的虚拟同心圆的各区域13c～13f也可以不在周向上相互分离地排列，而在周向上相互相互连结而连续地延伸。
在径向上相邻的各区域13a与各区域13b之间并不限定于一个区域12c，也可以存在多个区域12c。
关于分割区域11所含的多个区域12b、12c、区域12d～12h、区域13a、13b、以及区域13c～13f，也可以不为，越是配置于靠近连接区域5的边缘部6的位置的区域、面积越大。
在上述第一、第八实施方式中，涂膜形成区域10也可以不包括角区域14，在上述第二～七实施方式中，涂膜形成区域10也可以包括角区域14。
在上述实施方式中，对涂膜形成区域10被多个线状区域21分割成多个区域的例子进行了说明，但线状区域21至少一个即可，涂膜形成区域10也可以被一个线状区域21分割成两个区域。
在上述第五实施方式中，对各三角状区域16为涂膜8的形成区域的例子进行了说明，但也可以不在各三角状区域16形成涂膜8，而在各三角状区域16之间的区域形成有涂膜8。即，形成涂膜8的涂膜形成区域10也可以呈X字状。
在上述实施方式中，对格子区域15、17、18中的行以及列对齐而排列的例子进行了说明，但格子区域15、17、18中的行或列也可以错开而互不相同地排列。
附图标记说明
2、3…部件，4…铜烧结体，5…连接区域，6…边缘部，8…涂膜，9、9A～9G…印刷图案，10…涂膜形成区域，11…分割区域，12…放射区域，12a～12h、12m～12p…区域，13…同心区域，13a～13f、13m～13t…区域，14…角区域，14a～14d…区域，15、17、18…格子区域，15a、17a、18a…区域，16…三角状区域，19…角附近区域，19a…开口区域，19b…开口内区域，20…涂膜非形成区域，21、21a～21c…线状区域，A、B、C、D…点，R1～R4…角部。

Claims (7)

1.一种部件连接方法，利用铜烧结体连接第一部件与第二部件，其中，该部件连接方法包括：
印刷工序，以规定的印刷图案在所述第一部件与所述第二部件的连接区域形成连接用的铜糊剂的涂膜；
层叠工序，将所述第一部件与所述第二部件隔着所述涂膜而层叠；以及
烧结工序，烧结所述涂膜而形成所述铜烧结体，利用该铜烧结体连接所述第一部件与所述第二部件，
在所述印刷工序中，在所述印刷图案上形成涂膜形成区域和涂膜非形成区域，该涂膜形成区域形成所述涂膜，该涂膜非形成区域不形成所述涂膜，
所述涂膜形成区域被以连结在所述连接区域的边缘部相互分离的第一点与第二点的方式设置的一个或多个所述涂膜非形成区域分割成多个区域，
所述涂膜形成区域中的所述多个区域包括从所述连接区域的中心侧朝向所述边缘部以放射状排列的区域、以及绕所述连接区域的中心以同心状排列的区域中的至少一方。
2.如权利要求1所述的部件连接方法，其中，
所述涂膜形成区域中的所述多个区域包括所述以放射状排列的区域以及所述以同心状排列的区域这两方。
3.如权利要求2所述的部件连接方法，其中，
所述涂膜形成区域中的所述多个区域包括所述以放射状排列的区域与所述以同心状排列的区域从所述连接区域的中心侧朝向所述边缘部以放射状交替地配置的部分。
4.如权利要求1～3中任一项所述的部件连接方法，其中，
所述连接区域具有多个边，
所述涂膜非形成区域以连结位于互不相同的边的所述第一点与所述第二点的方式设置。
5.如权利要求1～4中任一项所述的部件连接方法，其中，
所述连接区域是矩形状的区域，
所述涂膜形成区域包括与所述连接区域的角部对应地配置的区域。
6.如权利要求1～5中任一项所述的部件连接方法，其中，
在所述涂膜形成区域中的所述多个区域中，越是配置于靠近所述连接区域的所述边缘部的位置的区域，其面积越大。
7.如权利要求1～6中任一项所述的部件连接方法，其中，
所述第一部件以及所述第二部件中的至少一方为半导体元件。
CN201880068321.1A 2017-10-23 2018-10-23 部件连接方法 Active CN111247629B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-204686 2017-10-23
JP2017204686A JP7127269B2 (ja) 2017-10-23 2017-10-23 部材接続方法
PCT/JP2018/039372 WO2019082896A1 (ja) 2017-10-23 2018-10-23 部材接続方法

Publications (2)

Publication Number Publication Date
CN111247629A true CN111247629A (zh) 2020-06-05
CN111247629B CN111247629B (zh) 2023-09-15

Family

ID=66247458

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880068321.1A Active CN111247629B (zh) 2017-10-23 2018-10-23 部件连接方法

Country Status (8)

Country Link
US (1) US11887960B2 (zh)
EP (2) EP4099381A3 (zh)
JP (1) JP7127269B2 (zh)
KR (1) KR20200070232A (zh)
CN (1) CN111247629B (zh)
SG (1) SG11202003379XA (zh)
TW (1) TWI785135B (zh)
WO (1) WO2019082896A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7155791B2 (ja) * 2018-09-18 2022-10-19 昭和電工マテリアルズ株式会社 部材接続方法及び接続体
JP7023302B2 (ja) * 2020-02-04 2022-02-21 田中貴金属工業株式会社 導電性接合材料を備える接合部材及び接合方法
JP2021127505A (ja) * 2020-02-14 2021-09-02 昭和電工マテリアルズ株式会社 接合用金属ペースト、接合体、半導体装置、及び接合体の製造方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175617A (ja) * 1991-12-24 1993-07-13 Matsushita Electric Works Ltd チップ実装用基板
JPH07111275A (ja) * 1993-10-14 1995-04-25 Fujitsu Ltd 樹脂ダイボンディング方法
JP2001319967A (ja) * 2000-05-11 2001-11-16 Ibiden Co Ltd セラミック基板の製造方法
US20070298244A1 (en) * 2006-06-21 2007-12-27 Yusuke Yasuda Bonding materials having particle with anisotropic shape
JP2014029964A (ja) * 2012-07-31 2014-02-13 Mitsubishi Materials Corp 接合体の製造方法、パワーモジュールの製造方法、及びパワーモジュール
CN103635997A (zh) * 2011-07-04 2014-03-12 罗伯特·博世有限公司 用于制造结构化的烧结连接层的方法以及具有结构化的烧结连接层的半导体器件
JP2015056550A (ja) * 2013-09-12 2015-03-23 三菱電機株式会社 電力用半導体装置の製造方法および電力用半導体装置
JP2015188026A (ja) * 2014-03-27 2015-10-29 三菱電機株式会社 電力用半導体装置、および電力用半導体装置の製造方法
JP2016184756A (ja) * 2016-06-10 2016-10-20 日亜化学工業株式会社 半導体素子実装部材及び半導体装置
WO2017043540A1 (ja) * 2015-09-07 2017-03-16 日立化成株式会社 接合体及び半導体装置
US20170144221A1 (en) * 2014-06-12 2017-05-25 Alpha Metals, Inc. Sintering Materials and Attachment Methods Using Same
CN107949447A (zh) * 2015-09-07 2018-04-20 日立化成株式会社 接合用铜糊料、接合体的制造方法及半导体装置的制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917600B2 (ja) * 1979-11-02 1984-04-21 松下電器産業株式会社 バイモルフ素子の製造方法
JPH0817997A (ja) * 1994-07-01 1996-01-19 Toppan Printing Co Ltd 半導体装置用配線基板の製造方法
JP3896696B2 (ja) 1998-07-06 2007-03-22 株式会社デンソー 電子部品の実装方法
DE10349167A1 (de) 2003-10-22 2005-05-19 Marconi Communications Gmbh Verfahren zum Kleben einer Schaltungskomponente auf einem Schaltungsträger
JP2005203557A (ja) 2004-01-15 2005-07-28 Renesas Technology Corp 半導体装置
JP4743002B2 (ja) 2006-06-13 2011-08-10 日産自動車株式会社 接合方法
JP5018117B2 (ja) 2007-02-15 2012-09-05 富士通セミコンダクター株式会社 電子部品の実装方法
JP5006081B2 (ja) 2007-03-28 2012-08-22 株式会社日立製作所 半導体装置、その製造方法、複合金属体及びその製造方法
JP5012239B2 (ja) * 2007-06-13 2012-08-29 株式会社デンソー 接合方法及び接合体
DE102007063308A1 (de) 2007-12-28 2009-07-02 Robert Bosch Gmbh Diode
JP2012106328A (ja) * 2010-03-25 2012-06-07 Toyo Tire & Rubber Co Ltd 積層研磨パッド
WO2014046840A1 (en) 2012-09-19 2014-03-27 Applied Materials, Inc. Methods for bonding substrates

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175617A (ja) * 1991-12-24 1993-07-13 Matsushita Electric Works Ltd チップ実装用基板
JPH07111275A (ja) * 1993-10-14 1995-04-25 Fujitsu Ltd 樹脂ダイボンディング方法
JP2001319967A (ja) * 2000-05-11 2001-11-16 Ibiden Co Ltd セラミック基板の製造方法
US20070298244A1 (en) * 2006-06-21 2007-12-27 Yusuke Yasuda Bonding materials having particle with anisotropic shape
CN103635997A (zh) * 2011-07-04 2014-03-12 罗伯特·博世有限公司 用于制造结构化的烧结连接层的方法以及具有结构化的烧结连接层的半导体器件
JP2014029964A (ja) * 2012-07-31 2014-02-13 Mitsubishi Materials Corp 接合体の製造方法、パワーモジュールの製造方法、及びパワーモジュール
JP2015056550A (ja) * 2013-09-12 2015-03-23 三菱電機株式会社 電力用半導体装置の製造方法および電力用半導体装置
JP2015188026A (ja) * 2014-03-27 2015-10-29 三菱電機株式会社 電力用半導体装置、および電力用半導体装置の製造方法
US20170144221A1 (en) * 2014-06-12 2017-05-25 Alpha Metals, Inc. Sintering Materials and Attachment Methods Using Same
WO2017043540A1 (ja) * 2015-09-07 2017-03-16 日立化成株式会社 接合体及び半導体装置
CN107949447A (zh) * 2015-09-07 2018-04-20 日立化成株式会社 接合用铜糊料、接合体的制造方法及半导体装置的制造方法
JP2016184756A (ja) * 2016-06-10 2016-10-20 日亜化学工業株式会社 半導体素子実装部材及び半導体装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
蔡一湘,刘伯武: "钨铜复合材料致密化问题和方法", 粉末冶金技术, no. 02 *

Also Published As

Publication number Publication date
WO2019082896A1 (ja) 2019-05-02
US11887960B2 (en) 2024-01-30
CN111247629B (zh) 2023-09-15
TWI785135B (zh) 2022-12-01
TW201926484A (zh) 2019-07-01
EP3703109A4 (en) 2022-02-16
SG11202003379XA (en) 2020-05-28
EP3703109A1 (en) 2020-09-02
JP2019079883A (ja) 2019-05-23
EP4099381A3 (en) 2023-07-19
JP7127269B2 (ja) 2022-08-30
US20210351157A1 (en) 2021-11-11
KR20200070232A (ko) 2020-06-17
EP4099381A2 (en) 2022-12-07

Similar Documents

Publication Publication Date Title
CN107949447B (zh) 接合用铜糊料、接合体的制造方法及半导体装置的制造方法
KR102379883B1 (ko) 접합용 구리 페이스트, 접합체의 제조 방법 및 반도체 장치의 제조 방법
CN107921541B (zh) 接合体及半导体装置
JP2022130365A (ja) 接合用銅ペースト、接合体の製造方法及び半導体装置の製造方法
US11024598B2 (en) Metallic sintered bonding body and die bonding method
CN111247629A (zh) 部件连接方法
KR20190105610A (ko) 무가압 접합용 구리 페이스트, 접합체 및 반도체 장치
WO2019093427A1 (ja) 接合体の製造方法及び接合材
JP7200527B2 (ja) 接合用金属ペースト及び接合体の製造方法
KR20190126297A (ko) 접합용 금속 페이스트, 접합체 및 그의 제조 방법, 및 반도체 장치 및 그의 제조 방법
JP6984146B2 (ja) 樹脂含有銅焼結体及びその製造方法、接合体、並びに半導体装置
JP7155791B2 (ja) 部材接続方法及び接続体
CN114450107A (zh) 接合用铜糊料、接合体的制造方法及接合体
JP7484097B2 (ja) 半導体装置
US20240181575A1 (en) Copper paste for forming sintered copper pillars and method for producing bonded body
JP7127407B2 (ja) 接合用金属ペースト、接合体及び接合体の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: Tokyo

Applicant after: Lishennoco Co.,Ltd.

Address before: Tokyo

Applicant before: HITACHI CHEMICAL Co.,Ltd.

CB02 Change of applicant information
GR01 Patent grant
GR01 Patent grant