SG11202003379XA - Member connection method - Google Patents

Member connection method

Info

Publication number
SG11202003379XA
SG11202003379XA SG11202003379XA SG11202003379XA SG11202003379XA SG 11202003379X A SG11202003379X A SG 11202003379XA SG 11202003379X A SG11202003379X A SG 11202003379XA SG 11202003379X A SG11202003379X A SG 11202003379XA SG 11202003379X A SG11202003379X A SG 11202003379XA
Authority
SG
Singapore
Prior art keywords
connection method
member connection
connection
Prior art date
Application number
SG11202003379XA
Inventor
Motohiro Negishi
Hideo Nakako
Yuki Kawana
Dai Ishikawa
Chie Sugama
Yoshinori Ejiri
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11202003379XA publication Critical patent/SG11202003379XA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
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    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
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    • B22F2007/047—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method non-pressurised baking of the paste or slurry containing metal powder
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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Powder Metallurgy (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
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SG11202003379XA 2017-10-23 2018-10-23 Member connection method SG11202003379XA (en)

Applications Claiming Priority (2)

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JP2017204686A JP7127269B2 (en) 2017-10-23 2017-10-23 Member connection method
PCT/JP2018/039372 WO2019082896A1 (en) 2017-10-23 2018-10-23 Member connection method

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SG11202003379XA true SG11202003379XA (en) 2020-05-28

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7155791B2 (en) * 2018-09-18 2022-10-19 昭和電工マテリアルズ株式会社 Member connection method and connection body
JP7023302B2 (en) * 2020-02-04 2022-02-21 田中貴金属工業株式会社 Joining member and joining method provided with conductive joining material

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917600B2 (en) * 1979-11-02 1984-04-21 松下電器産業株式会社 Bimorph device manufacturing method
JPH05175617A (en) * 1991-12-24 1993-07-13 Matsushita Electric Works Ltd Chip mounting board
JPH07111275A (en) * 1993-10-14 1995-04-25 Fujitsu Ltd Resin die-bonding method
JPH0817997A (en) * 1994-07-01 1996-01-19 Toppan Printing Co Ltd Manufacture of semiconductor device wiring board
JP3896696B2 (en) * 1998-07-06 2007-03-22 株式会社デンソー Electronic component mounting method
JP2001319967A (en) * 2000-05-11 2001-11-16 Ibiden Co Ltd Method for manufacturing ceramic substrate
DE10349167A1 (en) * 2003-10-22 2005-05-19 Marconi Communications Gmbh Method for bonding a circuit component to a circuit carrier
JP2005203557A (en) 2004-01-15 2005-07-28 Renesas Technology Corp Semiconductor device
JP4743002B2 (en) 2006-06-13 2011-08-10 日産自動車株式会社 Joining method
JP2008004651A (en) * 2006-06-21 2008-01-10 Hitachi Ltd Bonding material using anisotropic fine particles
JP5018117B2 (en) 2007-02-15 2012-09-05 富士通セミコンダクター株式会社 Electronic component mounting method
JP5006081B2 (en) 2007-03-28 2012-08-22 株式会社日立製作所 Semiconductor device, manufacturing method thereof, composite metal body and manufacturing method thereof
JP5012239B2 (en) * 2007-06-13 2012-08-29 株式会社デンソー Joining method and joined body
DE102007063308A1 (en) 2007-12-28 2009-07-02 Robert Bosch Gmbh diode
JP2012106328A (en) * 2010-03-25 2012-06-07 Toyo Tire & Rubber Co Ltd Laminate polishing pad
DE102011078582A1 (en) 2011-07-04 2013-01-10 Robert Bosch Gmbh Method for producing structured sintered layers and semiconductor component with structured sintered layer
JP6160037B2 (en) * 2012-07-31 2017-07-12 三菱マテリアル株式会社 Manufacturing method of joined body, manufacturing method of power module, joined body, power module, and substrate for power module
KR102172164B1 (en) 2012-09-19 2020-10-30 어플라이드 머티어리얼스, 인코포레이티드 Methods for bonding substrates
JP6206021B2 (en) * 2013-09-12 2017-10-04 三菱電機株式会社 Power semiconductor device manufacturing method and power semiconductor device
JP6129107B2 (en) * 2014-03-27 2017-05-17 三菱電機株式会社 Power semiconductor device and method for manufacturing power semiconductor device
US11389865B2 (en) * 2014-06-12 2022-07-19 Alpha Assembly Solutions Inc. Sintering materials and attachment methods using same
KR102545990B1 (en) * 2015-09-07 2023-06-20 가부시끼가이샤 레조낙 junctions and semiconductor devices
WO2017043545A1 (en) * 2015-09-07 2017-03-16 日立化成株式会社 Copper paste for joining, method for producing joined body, and method for producing semiconductor device
JP6128267B2 (en) * 2016-06-10 2017-05-17 日亜化学工業株式会社 Semiconductor element mounting member and semiconductor device

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