TWI785135B - 構件連接方法 - Google Patents

構件連接方法 Download PDF

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Publication number
TWI785135B
TWI785135B TW107137423A TW107137423A TWI785135B TW I785135 B TWI785135 B TW I785135B TW 107137423 A TW107137423 A TW 107137423A TW 107137423 A TW107137423 A TW 107137423A TW I785135 B TWI785135 B TW I785135B
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Taiwan
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region
coating film
connection
area
copper
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TW107137423A
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English (en)
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TW201926484A (zh
Inventor
根岸征央
中子偉夫
川名祐貴
石川大
須鎌千絵
江尻芳則
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日商昭和電工材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
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    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
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    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
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    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Powder Metallurgy (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Non-Disconnectible Joints And Screw-Threaded Joints (AREA)

Abstract

該構件連接方法包括：印刷步驟，於各構件2、3的連接區域5，以規定的印刷圖案9形成連接用的銅膏的塗膜8；積層步驟，介隔塗膜8將各構件2、3積層；以及燒結步驟，將塗膜8燒結而形成銅燒結體4，且藉由該銅燒結體4而將各構件2、3連接，印刷步驟中，於印刷圖案9中形成供塗膜8形成的塗膜形成區域10、及不形成塗膜8的無塗膜形成區域20，塗膜形成區域10藉由以將連接區域5的邊緣部6中彼此隔開的各點A～D連結的方式設置的多個線狀區域21a～21c而被分割為多個同心狀的區域12a～12c及多個放射狀的區域13a、13b。

Description

構件連接方法
本揭示是有關於一種構件連接方法。
先前，已知有藉由銅燒結體而將第一構件與第二構件連接的構件連接方法（例如參照專利文獻1）。作為該構件連接方法，有藉由網版印刷或分配印刷等來印刷連接用的銅膏的塗膜的方法。具體而言，首先，於印刷步驟中，藉由印刷而於第一構件與第二構件的連接區域形成連接用的銅膏的塗膜。繼而，於積層步驟中，介隔塗膜將第一構件與第二構件積層。並且，於燒結步驟中，藉由塗膜的燒結而形成將各構件彼此連接的銅燒結體。 [現有技術文獻] [專利文獻]
專利文獻1：日本專利特開2008-244242號公報
[發明所欲解決之課題] 於如上所述的先前的構件連接方法中，於印刷步驟中，於連接區域的整體形成塗膜，且於其後的積層步驟中，將各構件介隔塗膜而積層。此時，成為塗膜覆蓋各構件的連接面（塗膜側的表面）的整體的狀態，故塗膜的面積大，空氣容易進入塗膜的內部。另外，若各構件的連接面具有凹凸，則因該凹凸，在塗膜與各構件之間亦容易進入空氣。若如上所述在進入有空氣的狀態下於燒結步驟中將塗膜燒結，則在藉由燒結而形成的銅燒結體的內部、或銅燒結體與各構件之間，空氣以孔隙（void）（空隙）的形式殘存。孔隙成為將各構件彼此連接而成的連接體的結構缺陷，從而成為使各構件的連接性下降的因素。
本揭示的目的在於提供一種可抑制銅燒結體的內部或銅燒結體與各構件之間的孔隙的構件連接方法。 [解決課題之手段]
本揭示的構件連接方法是藉由銅燒結體而將第一構件與第二構件連接的構件連接方法，其包括：印刷步驟，於第一構件與第二構件的連接區域，以規定的印刷圖案形成連接用的銅膏的塗膜；積層步驟，介隔塗膜將第一構件與第二構件積層；以及燒結步驟，將塗膜燒結而形成銅燒結體，且藉由該銅燒結體而將第一構件與第二構件連接，印刷步驟中，於印刷圖案中形成供塗膜形成的塗膜形成區域、及不形成塗膜的無塗膜形成區域，塗膜形成區域藉由以將連接區域的邊緣部中彼此隔開的第一點與第二點連結的方式設置的一個或多個無塗膜形成區域而被分割為多個區域，塗膜形成區域中的多個區域包含自連接區域的中心側向邊緣部呈放射狀排列的區域、及圍繞連接區域的中心呈同心狀排列的區域的至少一者。
該構件連接方法中，印刷步驟中所形成的印刷圖案包括供塗膜形成的塗膜形成區域、及不形成塗膜的無塗膜形成區域。另外，塗膜形成區域藉由以將連接區域的邊緣部中彼此隔開的第一點與第二點連結的方式設置的一個或多個無塗膜形成區域而被分割為多個區域。藉此，當於積層步驟中將各構件介隔塗膜而積層時，無塗膜形成區域作為空氣退避至連接區域外的退避部而發揮功能。藉由積層步驟中的各構件的自重或賦予按壓力等，塗膜形成區域的多個區域擴張，藉此無塗膜形成區域消失。因此，燒結步驟中，呈銅膏的塗膜大致均勻地塗佈於連接區域的狀態，可抑制於燒結後的銅燒結體的內部、或銅燒結體與各構件之間殘存孔隙。進而，該構件連接方法中，塗膜形成區域中的多個區域包含呈放射狀排列的區域及呈同心狀排列的區域的至少一者，故能夠使塗膜在連接區域均勻地擴張，同時藉由無塗膜形成區域而使空氣有效率地退避至連接區域外。因此，可充分確保孔隙的抑制效果。
另外，塗膜形成區域中的多個區域亦可包含呈放射狀排列的區域、及呈同心狀排列的區域的兩者。該情況下，能夠使塗膜在連接區域更均勻地擴張，同時藉由無塗膜形成區域而使空氣更有效率地退避至連接區域外。
另外，塗膜形成區域中的多個區域亦可包含呈放射狀排列的區域及呈同心狀排列的區域自連接區域的中心側向邊緣部呈放射狀交替配置的部分。該情況下，能夠使塗膜在連接區域更均勻地擴張，同時藉由無塗膜形成區域而使空氣更有效率地退避至連接區域外。
另外，亦可為連接區域具有多個邊，且無塗膜形成區域是以將位於彼此不同的邊上的第一點與第二點連結的方式設置。該情況下，能夠藉由無塗膜形成區域而使空氣更有效率地退避至連接區域外。
另外，亦可為連接區域為矩形形狀的區域，且塗膜形成區域包含對應於連接區域的角部而配置的區域。該情況下，可防止連接區域的角部中的塗膜的不足。因此，可更確實地形成銅膏的塗膜大致均勻地塗佈於連接區域的狀態。
另外，塗膜形成區域中的多個區域可越為配置於靠近連接區域的邊緣部的位置的區域則面積越大。該情況下，可防止連接區域的邊緣部側中的塗膜的不足。因此，可更確實地形成銅膏的塗膜大致均勻地塗佈於連接區域的狀態。
另外，可為第一構件及第二構件中的至少一者為半導體元件。藉由將所述構件連接方法應用於半導體元件的連接中，可實現可靠性高的半導體裝置的製造。 [發明的效果]
根據本揭示，可提供一種能夠抑制銅燒結體的內部或銅燒結體與各構件之間的孔隙的構件連接方法。
以下，一面參照隨附圖式一面對本發明的較佳實施形態進行詳細說明。再者，於圖式的說明中，對相同要素標註相同符號，省略重覆說明。本說明書中例示的材料只要無特別說明，則可單獨使用一種或者將兩種以上組合使用。關於連接用金屬膏中的各成分的含量，於連接用金屬膏中存在多種相當於各成分的物質的情況下，只要無特別說明，則是指連接用金屬膏中所存在的該多種物質的合計量。使用「～」所表示的數值範圍表示包含「～」的前後所記載的數值分別作為最小值及最大值的範圍。本說明書中階段性地記載的數值範圍中，某階段的數值範圍的上限值或下限值亦可置換為另一階段的數值範圍的上限值或下限值。 （第1實施形態）
首先，對藉由第1實施形態的構件連接方法連接而成的連接體的一例進行說明。圖1是藉由第1實施形態的構件連接方法連接而成的連接體1的示意剖面圖。
如圖1所示，連接體1包括：構件2（第一構件）、構件3（第二構件）、以及將構件2與構件3連接的銅燒結體4。本實施形態中所謂「連接」，包含「接合」，即連接並結合。作為各構件2、3，例如可列舉：絕緣閘雙極電晶體（Insulated Gate Bipolar Transistor，IGBT）、二極體、肖特基能障二極體（Schottky-barrier diode）、金屬-氧化物半導體場效電晶體（Metal-Oxide-Semiconductor Field-Effect Transistor，MOS-FET）、閘流體、邏輯電路、感測器、類比積體電路、發光二極體（Light-Emitting Diode，LED）、半導體雷射、發信器等半導體元件；引線框架、貼附有金屬板的陶瓷基板（例如直接覆銅板（direct bonded copper，DBC））、LED封裝體等半導體元件搭載用基材；銅帶、金屬塊、端子等供電用構件；散熱板；水冷板等。
銅燒結體4是藉由對銅離子分散所得的銅膏進行燒結而形成。銅燒結體4亦可包含銅以外的成分（例如銅以外的金屬、合金、金屬間化合物、無機化合物、樹脂）。作為燒結方法，可使用不加壓燒結、加壓燒結（單軸加壓燒結、熱均壓（hot isostatic pressing，HIP）燒結）、通電燒結等。於將本實施形態的銅燒結體4用於半導體裝置的連接中的情況下，銅燒結體4較佳為藉由不加壓燒結而製作者。不加壓燒結就與加壓燒結相比可提高產量、半導體元件不易受損的方面而言較佳。
銅燒結體4較佳為銅的緻密度為40體積%以上且95體積%以下，更佳為50體積%以上且95體積%以下，進而佳為60體積%以上且95體積%以下。若銅的緻密度處於所述範圍，則可充分確保燒結體自身的機械特性、導熱性及導電性。另外，當將構件連接時容易獲得應力緩和的效果，可具有高連接可靠性。
銅燒結體4中銅的緻密度例如可藉由以下程序而求出。首先，將銅燒結體4切取為長方體。其次，利用遊標卡尺或外形形狀測定裝置來測定銅燒結體4的縱、橫的長度，並利用膜厚計測定厚度，藉此計算銅燒結體4的體積。根據所切取的銅燒結體4的體積、及利用精密天平而測定的銅燒結體4的質量，求出視密度M1 （g/cm3 ）。使用所求出的M1 及銅的理論密度8.96 g/cm3 ，根據下述式（A）求出銅燒結體中的銅的緻密度（體積%）。 銅燒結體中的銅的緻密度（體積%）=[（M1 ）/8.96]×100…（A）
其次，對本實施形態的構件連接方法進行說明。
本實施形態的構件連接方法為將構件2與構件3連接的構件連接方法，其包括以下的印刷步驟、積層步驟及燒結步驟。首先，於印刷步驟中，藉由印刷而於構件2與構件3的連接區域塗佈連接用的銅膏，以規定的印刷圖案形成該銅膏的塗膜。連接區域為當俯視構件2與構件3時各構件2、3彼此連接的區域。作為印刷方法，例如可使用：網版印刷、轉印印刷、膠版印刷、噴射印刷法、分配器、噴射分配器、針形分配器（needle dispenser）、螺桿分配器、缺角輪塗佈機、狹縫塗佈機、模塗機、凹版塗佈機（gravure coater）、狹縫塗佈、凸版印刷、凹版印刷、凹版印刷（gravure printing）、模版印刷（stencil printing）、軟微影（soft lithograph）、棒塗、敷料器（applicator）、粒子堆積法、噴霧塗佈機、旋轉塗佈機、浸漬塗佈機、或電沈積塗裝等。
繼而，於積層步驟中，介隔塗膜將構件2與構件3積層。於積層步驟中，可設為僅各構件2、3的自重施加至塗膜的不加壓，亦可除各構件2、3的自重外，亦對塗膜賦予0.01 MPa以下、較佳為0.005 MPa以下的按壓力。若對塗膜賦予的按壓力為所述範圍內，則不需要特別的加壓裝置，因此可不損及良率地減少孔隙、提高晶片剪切強度及連接性可靠度。作為使塗膜承受0.01 MPa以下的按壓力的方法，可列舉於構件2、3上載置砝碼的方法等。
於其後的燒結步驟中，對塗膜例如進行加熱處理，藉此將塗膜燒結而形成銅燒結體4。加熱處理中例如可使用：加熱板、溫風乾燥機、溫風加熱爐、氮氣乾燥機、紅外線乾燥機、紅外線加熱爐、遠紅外線加熱爐、微波加熱裝置、雷射加熱裝置、電磁加熱裝置、加熱器加熱裝置、蒸汽加熱爐等。於燒結步驟中，在對塗膜賦予各構件2、3的自重或所述範圍內的按壓力的狀態下將塗膜燒結。
其次，參照圖2，對本實施形態的印刷步驟中所形成的印刷圖案9進行詳細說明。圖2是表示本實施形態的印刷步驟中所形成的印刷圖案9的平面圖。如圖2所示，構件2與構件3的連接區域5亦為供印刷圖案9印刷的印刷區域。連接區域5為矩形形狀的區域，具有彼此相向的邊6a、6b及在與邊6a、6b的相向方向正交的方向上相向的邊6c、6d。連接區域5的邊緣部6包括邊6a～6d。
連接區域5於積層步驟中形成在彼此相向的構件2的連接面與構件3的連接面之間。再者，圖2中示出連接區域5的邊緣部6較構件2的連接面2a位於更內側的態樣，連接區域5的邊緣部6亦可與連接面2a的邊緣部一致。印刷圖案9形成於連接區域5。印刷圖案9包括供塗膜8形成的塗膜形成區域10、及不形成塗膜8的無塗膜形成區域20。
塗膜形成區域10包含分割區域11及角區域14。分割區域11包含：自連接區域5的中心P側向邊緣部6呈放射狀排列的放射區域12、及圍繞連接區域5的中心P呈同心圓狀或同心多邊形狀配置的同心區域13。所謂中心P，是指以距邊緣部6的各邊6a、6b的距離彼此同等，且距各邊6c、6d的距離彼此同等的方式定位的點。本實施形態中所謂「同等」，除相等的情況外，亦可將包含測定誤差或預先設定的範圍內的微差等的值視為同等。所謂呈放射狀排列，例如是指沿著朝向自連接區域5的中心P側向邊緣部6的直徑方向（以下簡稱為「直徑方向」）的假想直線而配置。所謂呈同心圓狀或多邊形狀配置，例如是指沿著將連接區域5的中心P視為共有的中心的多個假想同心圓或假想多邊形而配置。
具體而言，放射區域12包含分別沿著自連接區域5的中心P向各角部R1、R2、R3、R4的四條假想直線而各配置有三個的12個區域12a～12c。即，放射區域12包含與假想直線對應的（4組）沿著相同的假想直線的三個區域12a～12c。沿著相同的假想直線的各區域12a～12c在直徑方向上彼此隔開地排列。
同心區域13包含彼此共有中心P並且分別沿著距中心P的距離彼此不同的假想同心圓及假想多邊形而各配置有四個的8個區域13a、13b。即，同心區域13包含沿著相同的假想同心圓的4個區域13a、及沿著相同的假想多邊形的4個區域13b。假想多邊形位於較假想同心圓而更靠近遠離中心P側的邊緣部6。4個區域13a及4個區域13b分別在圓周方向上彼此隔開地排列。
與位於中心P側的區域12b的面積相比，位於邊緣部6側的區域12c的面積更大。另外，與位於中心P側的各區域13a的面積相比，位於邊緣部6側的各區域13b的面積更大。即，分割區域11所包含的多個區域中，區域12b、區域12c及區域13a、區域13b（區域12a以外的區域）是越為配置於靠近連接區域5的邊緣部6的位置的區域則面積越大。
塗膜形成區域10中，放射區域12與同心區域13包含自連接區域5的中心P側向邊緣部6呈放射狀交替配置的部分。即，塗膜形成區域10中，在直徑方向上相鄰的各區域13a與各區域13b之間分別定位有區域12c。該些放射區域12的區域12c發揮利用塗膜8將同心區域13中在直徑方向上相鄰的各區域13a與各區域13b之間填埋的作用。
角區域14是對應於連接區域5的各角部R1～R4而配置的區域。角區域14包含：對應於角部R1而配置的區域14a、對應於角部R2而配置的區域14b、對應於角部R3而配置的區域14c、以及對應於角部R4而配置的區域14d。各區域14a～14d位於較同心區域13中最靠外的各區域13b更靠邊緣部6側。各區域14a～14d以利用塗膜8將較各區域13b更靠邊緣部6側填埋的方式定位。
無塗膜形成區域20是以將連接區域5的邊緣部6中彼此隔開的第一點與第二點連結的方式設置，且包含將塗膜形成區域10分割為多個區域（本實施形態中為各區域12a～12c、各區域13a、13b）的多個線狀區域21。線狀區域21於積層步驟中作為空氣向連接區域5外退避的退避部而發揮功能。線狀區域21包含：以連結邊緣部6中的點A與點B的方式設置，使空氣自點A及點B的至少一側退避的線狀區域21a；以連結邊緣部6中的點C與點D的方式設置，使空氣自點C及點D的至少一側退避的線狀區域21b；以及以與線狀區域21a、21b相連的方式設置，使空氣經由線狀區域21a、21b退避的線狀區域21c。
線狀區域21a於連接區域5內自邊6a至邊6b呈直線狀延伸。線狀區域21a位於分割區域11所包含的各區域中在邊6a、6c的相向方向上相向的區域之間（各區域12a之間、各區域13a之間、各區域13b之間）。
線狀區域21b於連接區域5內自邊6c至邊6d呈直線狀延伸。線狀區域21b位於分割區域11所包含的各區域中在邊6c、6d的相向方向上相向的區域之間（各區域12a之間、各區域13a之間、各區域13b之間）。
線狀區域21c呈距中心P側的距離不同的同心圓狀或同心多邊形狀而排列有多個（本實施形態中為4個）。線狀區域21c位於分割區域11所包含的各區域中在直徑方向上相向的區域之間（各區域12a與各區域12b之間、各區域12b與各區域13a之間、各區域13a與各區域12c之間、各區域12c與各區域13b之間）。
其次，對本實施形態的印刷步驟中使用的連接用的銅膏的詳細情況進行說明。 （連接用銅膏）
本實施形態的連接用銅膏可包含金屬粒子及分散媒。
作為本實施形態的金屬粒子，可列舉：次微米銅粒子、微米銅粒子、該些以外的銅粒子、其他金屬粒子等。本說明書中，所謂次微米銅粒子是指粒徑或最大直徑為0.1 μm以上且小於1.0 μm的粒子，所謂微米銅粒子是指粒徑或最大直徑為1.0 μm以上且50 μm以下的粒子。 （次微米銅粒子）
作為次微米銅粒子，可列舉包含粒徑為0.12 μm以上且0.8 μm以下的銅粒子者，例如可使用體積平均粒徑為0.12 μm以上且0.8 μm以下的次微米銅粒子。若次微米銅粒子的體積平均粒徑為0.12 μm以上，則容易獲得次微米銅粒子的合成成本的抑制、良好的分散性、表面處理劑的使用量的抑制等效果。若次微米銅粒子的體積平均粒徑為0.8 μm以下，則容易獲得次微米銅粒子的燒結性優異的效果。就更進一步發揮所述效果的觀點而言，次微米銅粒子的體積平均粒徑可為0.15 μm以上且0.8 μm以下，亦可為0.15 μm以上且0.6 μm以下，亦可為0.2 μm以上且0.5 μm以下，亦可為0.3 μm以上且0.45 μm以下。
再者，本申請案說明書中所謂體積平均粒徑是指50%體積平均粒徑。在欲求出銅粒子的體積平均粒徑的情況下，可藉由如下方法等而求出：利用光散射法粒度分佈測定裝置（例如島津奈米粒子徑分佈測定裝置（SALD-7500nano，島津製作所股份有限公司製造）），對使用分散劑而將作為原料的銅粒子、或自連接用銅膏去除了揮發成分的乾燥銅粒子分散於分散媒中而成者進行測定。於使用光散射法粒度分佈測定裝置的情況下，作為分散媒，可使用己烷、甲苯、α-萜品醇等。
次微米銅粒子可含有10質量%以上的粒徑為0.12 μm以上且0.8 μm以下的銅粒子。就連接用銅膏的燒結性的觀點而言，次微米銅粒子可含有20質量%以上的粒徑為0.12 μm以上且0.8 μm以下的銅粒子，可含有30質量%以上，可含有100質量%。若次微米銅粒子中的粒徑為0.12 μm以上且0.8 μm以下的銅粒子的含有比例為20質量%以上，則銅粒子的分散性進一步提高，從而可進一步抑制黏度的上昇、膏濃度的下降。
銅粒子的粒徑可藉由下述方法而求出。銅粒子的粒徑例如可根據掃描式電子顯微鏡（Scanning Electron Microscope，SEM）圖像而算出。利用刮勺（spatula）將銅粒子的粉末載置於SEM用的碳帶上，製成SEM用樣品。利用SEM裝置以5000倍來觀察該SEM用樣品。利用圖像處理軟體對外接該SEM圖像的銅粒子的四邊形進行繪圖，將其一邊設為所述粒子的粒徑。
以金屬粒子的總質量為基準，次微米銅粒子的含量可為20質量%以上且90質量%以下，亦可為30質量%以上且90質量%以下，亦可為35質量%以上且85質量%以下，亦可為40質量%以上且80質量%以下。若次微米銅粒子的含量為所述範圍內，則容易形成以上所述的本實施形態的銅燒結體。
以次微米銅粒子的質量及片狀微米銅粒子的質量的合計為基準，次微米銅粒子的含量可為20質量%以上且90質量%以下。若次微米銅粒子的所述含量為20質量%以上，則可將片狀微米銅粒子之間充分地填充，容易形成以上所述的本實施形態的銅燒結體。若次微米銅粒子的所述含量為90質量%以下，則可充分抑制將連接用銅膏燒結時的體積收縮，因此容易形成以上所述的本實施形態的銅燒結體。就更進一步發揮所述效果的觀點而言，以次微米銅粒子的質量及片狀微米銅粒子的質量的合計為基準，次微米銅粒子的含量可為30質量%以上且85質量%以下，亦可為35質量%以上且85質量%以下，亦可為40質量%以上且80質量%以下。
次微米銅粒子的形狀並無特別限定。作為次微米銅粒子的形狀，例如可列舉：球狀、塊狀、針狀、片狀、大致球狀及該些的凝聚體。就分散性及填充性的觀點而言，次微米銅粒子的形狀可為球狀、大致球狀、片狀，就燃燒性、分散性、與片狀微米銅粒子的混合性等觀點而言，可為球狀或大致球狀。本說明書中，所謂「片狀」，包含板狀、鱗片狀等平板狀的形狀。
就分散性、填充性及與片狀微米銅粒子的混合性的觀點而言，次微米銅粒子的縱橫比可為5以下，亦可為3以下。本說明書中，所謂「縱橫比」表示粒子的長邊/厚度。粒子的長邊及厚度的測定例如可根據粒子的SEM圖像而求出。
次微米銅粒子可經特定的表面處理劑處理。作為特定的表面處理劑，例如可列舉碳數8～16的有機酸。作為碳數8～16的有機酸，例如可列舉：辛酸、甲基庚酸、乙基己酸、丙基戊酸、壬酸、甲基辛酸、乙基庚酸、丙基己酸、癸酸、甲基壬酸、乙基辛酸、丙基庚酸、丁基己酸、十一酸、甲基癸酸、乙基壬酸、丙基辛酸、丁基庚酸、月桂酸、甲基十一酸、乙基癸酸、丙基壬酸、丁基辛酸、戊基庚酸、十三酸、甲基十二酸、乙基十一酸、丙基癸酸、丁基壬酸、戊基辛酸、肉豆蔻酸、甲基十三酸、乙基十二酸、丙基十一酸、丁基癸酸、戊基壬酸、己基辛酸、十五酸、甲基十四酸、乙基十三酸、丙基十二酸、丁基十一酸、戊基癸酸、己基壬酸、棕櫚酸、甲基十五酸、乙基十四酸、丙基十三酸、丁基十二酸、戊基十一酸、己基癸酸、庚基壬酸、甲基環己烷羧酸、乙基環己烷羧酸、丙基環己烷羧酸、丁基環己烷羧酸、戊基環己烷羧酸、己基環己烷羧酸、庚基環己烷羧酸、辛基環己烷羧酸、壬基環己烷羧酸等飽和脂肪酸；辛烯酸、壬烯酸、甲基壬烯酸、癸烯酸、十一碳烯酸、十二碳烯酸、十三碳烯酸、十四碳烯酸、肉豆蔻油酸、十五碳烯酸、十六碳烯酸、棕櫚油酸、十六碳-6-烯酸（sapienic acid）等不飽和脂肪酸；對苯二甲酸、均苯四甲酸、鄰苯氧基苯甲酸、甲基苯甲酸、乙基苯甲酸、丙基苯甲酸、丁基苯甲酸、戊基苯甲酸、己基苯甲酸、庚基苯甲酸、辛基苯甲酸、壬基苯甲酸等芳香族羧酸。有機酸可單獨使用一種，亦可將兩種以上組合使用。藉由將此種有機酸與所述次微米銅粒子加以組合，而存在可兼具次微米銅粒子的分散性與燒結時的有機酸的脫離性的傾向。
表面處理劑的處理量可為0.07質量%以上且2.1質量%以下，亦可為0.10質量%以上且1.6質量%以下，亦可為0.2質量%以上且1.1質量%以下。
作為次微米銅粒子，可使用市售品。作為市售的次微米銅粒子，例如可列舉：Cu-C-40（福田金屬箔粉工業股份有限公司製造，體積平均粒徑0.6 μm）、EFC-20LML（福田金屬箔粉工業股份有限公司製造，數量平均粒徑0.2 μm）、CH-0200（三井金屬礦業股份有限公司製造，體積平均粒徑0.36 μm）、HT-14（三井金屬礦業股份有限公司製造，體積平均粒徑0.41 μm）、CT-500（三井金屬礦業股份有限公司製造，體積平均粒徑0.72 μm）、Tn-Cu100（太陽日酸股份有限公司製造，體積平均粒徑0.12 μm）。 （微米銅粒子）
作為微米銅粒子，可列舉含有粒徑為2 μm以上且50 μm以下的銅粒子者，例如可使用體積平均粒徑為2 μm以上且50 μm以下的銅粒子。若微米銅粒子的體積平均粒徑為所述範圍內，則可充分減少將連接用銅膏燒結時的體積收縮，容易確保使連接用銅膏燒結而製造的連接體的連接強度。於將連接用銅膏用於半導體元件的連接中的情況下，若微米銅粒子的體積平均粒徑為所述範圍內，則存在半導體裝置顯示出良好的晶片剪切強度及連接可靠性的傾向。就更進一步發揮所述效果的觀點而言，微米銅粒子的體積平均粒徑可為3 μm以上且20 μm以下，亦可為3 μm以上且10 μm以下。
微米銅粒子可含有50質量%以上的粒徑為2 μm以上且50 μm以下的銅粒子。就連接體內的配向、增強效果、連接膏的填充性的觀點而言，微米銅粒子可含有70質量%以上的粒徑為2 μm以上且50 μm以下的銅粒子，可含有80質量%以上，可含有100質量%。就抑制連接不良的觀點而言，微米銅粒子較佳為不含例如最大直徑超過20 μm的粒子等尺寸超出連接厚度的粒子。
以金屬粒子的總質量為基準，微米銅粒子的含量可為10質量%以上且90質量%以下，亦可為15質量%以上且65質量%以下，亦可為20質量%以上且60質量%以下。若微米銅粒子的含量為所述範圍內，則容易確保使連接用銅膏燒結而製造的連接體的連接強度。於將連接用銅膏用於半導體元件的連接中的情況下，若微米銅粒子的含量為所述範圍內，則存在半導體裝置顯示出良好的晶片剪切強度及連接可靠性的傾向。
以金屬粒子的總質量為基準，次微米銅粒子的含量及微米銅粒子的含量的合計可設為80質量%以上。若次微米銅粒子的含量及微米銅粒子的含量的合計為所述範圍內，則可充分減少將連接用銅膏燒結時的體積收縮，容易確保使連接用銅膏燒結而製造的連接體的連接強度。於將連接用銅膏用於半導體元件的連接中的情況下，存在半導體裝置顯示出良好的晶片剪切強度及連接可靠性的傾向。就更進一步發揮所述效果的觀點而言，以金屬粒子的總質量為基準，次微米銅粒子的含量及微米銅粒子的含量的合計可為90質量%以上，亦可為95質量%以上，亦可為100質量%。
微米銅粒子的形狀並無特別限定。作為微米銅粒子的形狀，例如可列舉：球狀、塊狀、針狀、片狀、大致球狀及該些的凝聚體。其中，微米銅粒子的形狀較佳為片狀。藉由使用片狀的微米銅粒子，從而連接用銅膏內的微米銅粒子相對於連接面而大致平行地配向，藉此可抑制使連接用銅膏燒結時的體積收縮，容易確保使連接用銅膏燒結而製造的連接體的連接強度。於將連接用銅膏用於半導體元件的連接中的情況下，存在半導體裝置顯示出良好的晶片剪切強度及連接可靠性的傾向。其中，就更進一步發揮所述效果的觀點而言，作為片狀的微米銅粒子，縱橫比可為4以上，亦可為6以上。
對於微米銅粒子而言，有無表面處理劑的處理並無特別限定。就分散穩定性及耐氧化性的觀點而言，微米銅粒子可經表面處理劑處理。表面處理劑可為在連接時被去除者。作為此種表面處理劑，例如可列舉：棕櫚酸、硬脂酸、花生酸（arachidic acid）、油酸等脂肪族羧酸；對苯二甲酸、均苯四甲酸、鄰苯氧基苯甲酸等芳香族羧酸；鯨蠟醇、硬脂醇、異冰片基環己醇、四乙二醇等脂肪族醇；對苯基苯酚等芳香族醇；辛基胺、十二烷基胺、硬脂基胺等烷基胺；硬脂腈、癸腈等脂肪族腈；烷基烷氧基矽烷等矽烷偶合劑；聚乙二醇、聚乙烯醇、聚乙烯吡咯啶酮、矽酮寡聚物等高分子處理劑等。表面處理劑可單獨使用一種，亦可將兩種以上組合使用。表面處理劑的處理量通常為0.001質量%以上。
於僅由所述次微米銅粒子來製備連接用銅膏的情況下，伴隨分散媒的乾燥的體積收縮及燒結收縮大，因此在連接用銅膏的燒結時容易自被接著面剝離，從而於半導體元件等的連接中難以獲得充分的晶片剪切強度及連接可靠性。藉由併用次微米銅粒子與微米銅粒子，使連接用銅膏燒結時的體積收縮得到抑制，連接體可具有充分的連接強度。於將連接用銅膏用於半導體元件的連接中的情況下，可獲得半導體裝置顯示出良好的晶片剪切強度及連接可靠性的效果。
作為本實施形態的微米銅粒子，可使用市售品。作為市售的微米銅粒子，例如可列舉：MA-C025（三井金屬礦業股份有限公司製造，體積平均粒徑7.5 μm）、MA-C025KFD（三井金屬礦業股份有限公司製造，體積平均粒徑5 μm）、MA-C08JF（三井金屬礦業股份有限公司製造，體積平均粒徑13.2 μm）、3L3（福田金屬箔粉工業股份有限公司製造，體積平均粒徑6.0 μm）、2L3（福田金屬箔粉工業股份有限公司製造，體積平均粒徑10.0 μm）、4L3（福田金屬箔粉工業股份有限公司製造，體積平均粒徑3.0 μm）、C3（福田金屬箔粉工業股份有限公司製造，體積平均粒徑37.0 μm）、E3（福田金屬箔粉工業股份有限公司製造，體積平均粒徑37.0 μm）、1110F（三井金屬礦業股份有限公司製造，體積平均粒徑3.8 μm）、1400YP（三井金屬礦業股份有限公司製造，體積平均粒徑5.2 μm）、1400YF（三井金屬礦業股份有限公司製造，體積平均粒徑6.8 μm）、1050YP（三井金屬礦業股份有限公司製造，體積平均粒徑0.94 μm）、1050YF（三井金屬礦業股份有限公司製造，體積平均粒徑1.7 μm）、Cu-HWQ3.0 μm（福田金屬箔粉工業股份有限公司製造，體積平均粒徑3.0 μm）。
（銅粒子以外的其他金屬粒子）
作為金屬粒子，亦可包含次微米銅粒子及微米銅粒子以外的其他金屬粒子，例如亦可包含鎳、銀、金、鈀、鉑等的粒子。其他金屬粒子的體積平均粒徑可為0.01 μm以上且10 μm以下，亦可為0.01 μm以上且5 μm以下，亦可為0.05 μm以上且3 μm以下。於包含其他金屬粒子的情況下，就獲得充分的連接性的觀點而言，以金屬粒子的總質量為基準，其含量可小於20質量%，亦可為10質量%以下。亦可不含其他金屬粒子。其他金屬粒子的形狀並無特別限定。
藉由包含銅粒子以外的金屬粒子，可獲得固溶或分散有多種金屬的燒結體，因此燒結體的降伏應力、疲勞強度等機械特性得到改善，從而容易提高連接可靠性。另外，藉由添加多種金屬粒子，可使連接用銅膏的燒結體對於特定的被接著體具有充分的連接強度。於將連接用銅膏用於半導體元件的連接中的情況下，容易提高半導體裝置的晶片剪切強度及連接可靠性。
（分散媒）
分散媒並無特別限定，可為揮發性的分散媒。作為揮發性的分散媒，例如可列舉：戊醇、己醇、庚醇、辛醇、癸醇、乙二醇、二乙二醇、丙二醇、丁二醇、α-萜品醇、異冰片基環己醇（MTPH）等一元及多元醇類；乙二醇丁醚、乙二醇苯醚、二乙二醇甲醚、二乙二醇乙醚、二乙二醇丁醚、二乙二醇異丁醚、二乙二醇己醚、三乙二醇甲醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇二丁醚、二乙二醇丁基甲基醚、二乙二醇異丙基甲基醚、三乙二醇二甲醚、三乙二醇丁基甲基醚、丙二醇丙醚、二丙二醇甲醚、二丙二醇乙醚、二丙二醇丙醚、二丙二醇丁醚、二丙二醇二甲醚、三丙二醇甲醚、三丙二醇二甲醚等醚類；乙二醇乙醚乙酸酯、乙二醇丁醚乙酸酯、二乙二醇乙醚乙酸酯、二乙二醇丁醚乙酸酯、二丙二醇甲醚乙酸酯（dipropylene glycol methyl ether acetate，DPMA）、乳酸乙酯、乳酸丁酯、甘油三丁酸酯（tributyrin）、硬脂酸丁酯、鯊烷（squalane）、癸二酸二丁酯、己二酸雙(2-乙基己基)酯、γ-丁內酯、碳酸伸丙酯等酯類；N-甲基-2-吡咯啶酮、N,N-二甲基乙醯胺、N,N-二甲基甲醯胺等酸醯胺；環己烷、辛烷、壬烷、癸烷、十一烷等脂肪族烴；苯、甲苯、二甲苯等芳香族烴；具有碳數1～18的烷基的硫醇類；具有碳數5～7的環烷基的硫醇類。作為具有碳數1～18的烷基的硫醇類，例如可列舉：乙基硫醇、正丙基硫醇、異丙基硫醇、正丁基硫醇、異丁基硫醇、第三丁基硫醇、戊基硫醇、己基硫醇及十二烷基硫醇。作為具有碳數5～7的環烷基的硫醇類，例如可列舉：環戊基硫醇、環己基硫醇及環庚基硫醇。
以金屬粒子的總質量為100質量份計，分散媒的含量可為5質量份～50質量份。若分散媒的含量為所述範圍內，則可將連接用銅膏調整為更適當的黏度，而且不易阻礙銅粒子的燒結。 （添加劑）
連接用銅膏中視需要亦可適宜地添加非離子系界面活性劑、氟系界面活性劑等潤濕性提昇劑；矽酮油等消泡劑；無機離子交換體等離子捕捉劑等。
其次，與先前的構件連接方法相比較，對本實施形態的構件連接方法的作用及效果進行說明。先前的構件連接方法與本實施形態的構件連接方法相比，不同點在於印刷步驟中的印刷圖案不同。圖3（a）、圖3（b）是將先前與本實施形態的印刷圖案加以比較來表示的圖。圖3（a）表示先前的印刷圖案100，圖3（b）表示本實施形態的印刷圖案9。圖4（a）、圖4（b）是表示使用超音波觀察裝置分別對先前及本實施形態的燒結後的銅燒結體4與構件2的界面進行觀察所得的結果的照片。圖4（a）表示圖3（a）的先前的印刷圖案100的情況下的結果，圖4（b）表示圖3（b）的本實施形態的印刷圖案9的情況下的結果。圖4（a）、圖4（b）中以虛線表示連接區域5。
如圖3（a）所示，於先前的構件連接方法的印刷步驟中，所形成的印刷圖案100呈沿著連接區域5的邊緣部6的矩形形狀。即，於連接區域5的整體形成有塗膜8。因此，若於其後的積層步驟中將各構件2、3介隔塗膜8而積層，則將各構件2、3的連接面的整體覆蓋的塗膜8的面積大，空氣容易進入塗膜8的內部。另外，若各構件2、3的連接面具有凹凸，則因該凹凸，在塗膜8與各構件2、3之間亦容易進入空氣。若如上所述在進入有空氣的狀態下於燒結步驟中將塗膜8燒結，則在藉由燒結而形成的銅燒結體4的內部、或銅燒結體4與各構件2、3之間，空氣以孔隙（空隙）的形式殘存。例如，如圖4（a）所示，在銅燒結體4與構件2之間，殘存有以白色來表示的孔隙。孔隙成為將各構件2、3彼此連接而成的連接體1的結構缺陷，從而成為使各構件2、3的連接性下降的因素。
與此相對，如圖3（b）所示，本實施形態的構件連接方法中，印刷步驟中所形成的印刷圖案9包括供塗膜8形成的塗膜形成區域10、及不形成塗膜8的無塗膜形成區域20。另外，塗膜形成區域10藉由線狀區域21a～21c（線狀區域21）而被分割為多個區域12a～12c、13a、13b。藉此，於積層步驟中，進入塗膜8的內部的空氣及進入塗膜8與各構件2、3之間的空氣自各區域12a～12c、13a、13b直接流向線狀區域21a、21b，或者自各區域12a～12c、13a、13b經由線狀區域21c流向線狀區域21a、21b。流向線狀區域21a、21b的空氣可自連接區域5的邊緣部6向連接區域5外脫出。藉由積層步驟中的各構件2、3的自重或賦予按壓力等，多個區域12a～12c、13a、13b、14a～14d擴張，藉此無塗膜形成區域20消失。因此，燒結步驟中，呈銅膏的塗膜8大致均勻地塗佈於連接區域5的狀態，可抑制於燒結後的銅燒結體4的內部、或銅燒結體4與各構件2、3之間殘存孔隙。例如，如圖4（b）所示，在銅燒結體4與構件2之間未殘存孔隙。結果，可提高各構件2、3的連接性。
再者，與先前的印刷圖案相比，本實施形態的印刷圖案9需要加厚印刷厚度，但可藉由調整印刷體積而設為與先前的印刷圖案100同等的印刷量。由此，能夠以與先前的印刷圖案100同等的塗佈量來實現孔隙的抑制。
本實施形態中，塗膜形成區域10包含：呈放射狀排列的放射區域12、及呈同心圓狀或同心多邊形狀排列的同心區域13。由此，能夠藉由線狀區域21a～21c而使空氣有效率地退避至連接區域5外，可充分確保孔隙的抑制效果。
另外，本實施形態中，塗膜形成區域10中，放射區域12與同心區域13包含自連接區域5的中心P側向邊緣部6呈放射狀交替配置的部分。藉此，可防止直徑方向上相鄰的各區域13a與各區域13b之間的塗膜8的不足。因此，可更確實地形成銅膏的塗膜8大致均勻地塗佈於連接區域5的狀態。另外，本實施形態中，連接區域5具有多個邊6a～6d，且無塗膜形成區域20是以將位於彼此不同的邊上的點A、B及點C、D連結的方式設置。藉由此種構成，能夠使塗膜8在連接區域5更均勻地擴張，同時藉由無塗膜形成區域20而使空氣更有效率地退避至連接區域外。
進而，本實施形態中，塗膜形成區域10包含對應於連接區域5的各角部R1～R4而配置的角區域14。由此，可防止連接區域5的各角部R1～R4中的塗膜8的不足。另外，分割區域11所包含的多個區域12b、12c、13a、13b是越為配置於靠近連接區域5的邊緣部6的位置的區域則面積越大。由此，可防止連接區域5的邊緣部6側中的塗膜8的不足。
藉由將本實施形態的構件連接方法應用於半導體元件的連接中，可實現可靠性高的半導體裝置的製造。 （第2實施形態）
其次，參照圖5，對第2實施形態的構件連接方法的印刷步驟中所形成的印刷圖案9A進行說明。圖5是表示第2實施形態的印刷圖案9A的平面圖。如圖5所示，第2實施形態中，塗膜形成區域10僅包含分割區域11，不包含角區域14，且分割區域11中僅包含自連接區域5的中心側向邊緣部6呈放射狀排列的放射區域12。
具體而言，放射區域12包含分別沿著自連接區域5的中心P向邊緣部6的八條假想直線而各配置有五個的40個區域12d～12h。即，放射區域12包含與假想直線對應的（8組）沿著相同的假想直線的五個區域12d～12h。沿著相同的假想直線的各區域12d～12h在直徑方向上彼此隔開地排列。
沿著相同的假想直線的各區域12d～12h的面積依照區域12d、區域12e、區域12f、區域12g、區域12h的順序變大。即，分割區域11所包含的多個區域12d～12h是越為配置於靠近連接區域5的邊緣部6的位置的區域則面積越大。
本實施形態中同樣地，無塗膜形成區域20是以將連接區域5的邊緣部6中彼此隔開的第一點與第二點連結的方式設置，且包含將塗膜形成區域10分割為多個區域（本實施形態中為各區域12d～12h）的多個線狀區域21。由此，當於積層步驟中將各構件2、3介隔塗膜8而積層時，線狀區域21作為空氣退避至連接區域5外的退避部而發揮功能。因此，與所述實施形態同樣，可抑制於燒結後的銅燒結體4的內部、或銅燒結體4與各構件2、3之間殘存孔隙。 （第3實施形態）
其次，參照圖6，對第3實施形態的構件連接方法的印刷步驟中所形成的印刷圖案9B進行說明。圖6是表示第3實施形態的印刷圖案9B的平面圖。如圖6所示，第3實施形態中，分割區域11僅包含圍繞連接區域5的中心P呈同心圓狀配置的同心區域13。
具體而言，同心區域13包含彼此共有中心P並且分別沿著距中心P的距離彼此不同的四個假想同心圓而各配置有四個的16個區域13c～13f。即，同心區域13包含與假想同心圓對應的（4組）沿著相同的假想同心圓的四個各區域13c～13f。沿著相同的假想同心圓的各區域13c～13f在圓周方向上彼此隔開地排列。
各區域13c～13f的面積依照區域13c、區域13d、區域13e、區域13f的順序變大。即，分割區域11所包含的多個區域13c～13f是越為配置於靠近連接區域5的邊緣部6的位置的區域則面積越大。
本實施形態中同樣地，無塗膜形成區域20是以將連接區域5的邊緣部6中彼此隔開的第一點與第二點連結的方式設置，且包含將塗膜形成區域10分割為多個區域（本實施形態中為各區域13c～13f）的多個線狀區域21。由此，當於積層步驟中將各構件2、3介隔塗膜8而積層時，線狀區域21作為空氣退避至連接區域5外的退避部而發揮功能。因此，與所述實施形態同樣，可抑制於燒結後的銅燒結體4的內部、或銅燒結體4與各構件2、3之間殘存孔隙。 （第4實施形態）
其次，參照圖7，對第4實施形態的構件連接方法的印刷步驟中所形成的印刷圖案9C進行說明。圖7是表示第4實施形態的印刷圖案9C的平面圖。如圖7所示，第4實施形態中，分割區域11僅包含呈格子狀排列的格子區域15。所謂呈格子狀排列，例如是指配置於連接區域5內的網眼狀的等間隔的假想水平線及假想垂直線的交點。本實施形態中，於連接區域5內，格子區域15包含6列×6行的共計36個矩形形狀的區域15a。
本實施形態中同樣地，無塗膜形成區域20是以將連接區域5的邊緣部6中彼此隔開的第一點與第二點連結的方式設置，且包含將塗膜形成區域10分割為多個區域（本實施形態中為各區域15a）的多個線狀區域21。由此，當於積層步驟中將各構件2、3介隔塗膜8而積層時，線狀區域21作為空氣退避至連接區域5外的退避部而發揮功能。因此，與所述實施形態同樣，可抑制於燒結後的銅燒結體4的內部、或銅燒結體4與各構件2、3之間殘存孔隙。本實施形態中，亦能夠藉由多個線狀區域21而使空氣有效率地退避至連接區域5外，可充分確保孔隙的抑制效果。 （第5實施形態）
其次，參照圖8，對第5實施形態的構件連接方法的印刷步驟中所形成的印刷圖案9D進行說明。圖8是表示第5實施形態的印刷圖案9D的平面圖。如圖8所示，第5實施形態中，分割區域11僅包含四個三角狀區域16。各三角狀區域16使一個頂點朝向連接區域5的中心P而自中心P向連接區域5的邊緣部6擴展。
本實施形態中同樣地，無塗膜形成區域20是以將連接區域5的邊緣部6中彼此隔開的第一點與第二點連結的方式設置，且包含將塗膜形成區域10分割為多個區域（本實施形態中為各三角狀區域16）的多個線狀區域21。由此，當於積層步驟中將各構件2、3介隔塗膜8而積層時，線狀區域21作為空氣退避至連接區域5外的退避部而發揮功能。因此，與所述實施形態同樣，可抑制於燒結後的銅燒結體4的內部、或銅燒結體4與各構件2、3之間殘存孔隙。 （第6實施形態）
其次，參照圖9，對第6實施形態的構件連接方法的印刷步驟中所形成的印刷圖案9E進行說明。圖9是表示第6實施形態的印刷圖案9E的平面圖。如圖9所示，第6實施形態中，分割區域11僅包含格子區域17。格子區域17與所述第4實施形態同樣，為呈格子狀排列的區域。本實施形態中，格子區域17包含10列×10行的共計100個圓形形狀的區域17a。區域17a的內側可如圖所示被塗膜8填埋，亦可無塗膜8而開口。
本實施形態中同樣地，無塗膜形成區域20是以將連接區域5的邊緣部6中彼此隔開的第一點與第二點連結的方式設置，且包含將塗膜形成區域10分割為多個區域（本實施形態中為各區域17a）的多個線狀區域21。因此，與所述實施形態同樣，本實施形態中，亦能夠藉由多個線狀區域21而使空氣有效率地退避至連接區域5外，可充分確保孔隙的抑制效果。 （第7實施形態）
其次，參照圖10，對第7實施形態的構件連接方法的印刷步驟中所形成的印刷圖案9F進行說明。圖10是表示第7實施形態的印刷圖案9F的平面圖。如圖10所示，第7實施形態中，分割區域11僅包含格子區域18。格子區域18與所述第4實施形態同樣，為呈格子狀排列的區域。本實施形態中，格子區域18包含4列×4行的共計16個十字狀的區域18a。區域18a的內側可如圖所示被塗膜8填埋，亦可無塗膜8而開口。
本實施形態中同樣地，無塗膜形成區域20是以將連接區域5的邊緣部6中彼此隔開的第一點與第二點連結的方式設置，且包含將塗膜形成區域10分割為多個區域（本實施形態中為各區域18a）的多個線狀區域21。因此，與所述實施形態同樣，本實施形態中，亦能夠藉由多個線狀區域21而使空氣有效率地退避至連接區域5外，可充分確保孔隙的抑制效果。 （第8實施形態）
其次，參照圖11，對第8實施形態的構件連接方法的印刷步驟中所形成的印刷圖案9G進行說明。圖11是表示第8實施形態的印刷圖案9G的平面圖。如圖11所示，第8實施形態中，塗膜形成區域10包含分割區域11及角區域14。分割區域11包含放射區域12、同心區域13、及角附近區域19。
本實施形態中，放射區域12包含分別沿著自連接區域5的中心P向邊緣部6的八條假想直線而各配置有四個的32個區域12m、12n、12o、12p。即，放射區域12包含與假想直線對應的（8組）沿著相同的假想直線的四個區域12m～12p。沿著相同的假想直線的各區域12m～12p在直徑方向上彼此隔開地排列。
同心區域13包含彼此共有連接區域5的中心P並且距中心P的距離彼此不同的七個同心圓狀的區域13m、13n、13o、13p、13q、13r、13s、13t。區域12m位於區域13m與區域13n之間。區域13m與區域13n藉由區域12m而彼此連接。區域12n位於區域13o與區域13p之間。區域13o與區域13p藉由區域12n而彼此連接。區域12o位於區域13q與區域13r之間。區域13q與區域13r藉由區域12o而彼此連接。區域12p位於區域13s與區域13t之間。區域13s與區域13t藉由區域12p而彼此連接。
區域13n與區域13o之間可如圖所示般隔開，亦可被塗膜8填埋。區域13p與區域13q之間可如圖所示般隔開，亦可被塗膜8填埋。區域13r與區域13s之間可如圖所示般隔開，亦可被塗膜8填埋。
角附近區域19在所對應的角部R1～R4的附近各配置有四個。角附近區域19位於較同心區域13中最靠外的區域13t更靠外側（邊緣部6側）。各角附近區域19包含大致梯形形狀的開口區域19a、及配置於開口區域19a的內部的開口內區域19b。開口區域19a包含：位於較區域13t更靠外側（邊緣部6側）的圓弧部19a1 、位於較圓弧部19a1 更靠外側（邊緣部6側）且較圓弧部19a1 更短的圓弧部19a2 、及沿著邊緣部6延伸而將圓弧部19a1 與圓弧部19a2 連接的一對邊部19a3 。圓弧部19a1 與圓弧部19a2 彼此共有中心P並且分別沿著距中心P的距離彼此不同的假想同心圓，且彼此大致平行。開口區域19a可如圖所示般開口，亦可被塗膜8填埋。
開口內區域19b在自中心P向所對應的角部R1～R4的假想直線上，且配置於較放射區域12中最靠外的區域12p更靠外側（邊緣部6側）。開口內區域19b位於圓弧部19a1 與圓弧部19a2 之間，將圓弧部19a1 與圓弧部19a2 連接。
本實施形態中，角區域14中的各區域14a～14d位於較角附近區域19更靠外側（邊緣部6側）。即，各區域14a～14d位於自中心P向所對應的角部R1～R4的假想直線上的最靠近邊緣部6處。
本實施形態中，同心區域13包含七個同心圓狀的區域13m～13t，且放射區域12中的各區域12m～12p以利用塗膜8將區域13m與區域13n之間、區域13o與區域13p之間、區域13q與區域13r之間、及區域13s與區域13t之間填埋的方式定位。角附近區域19以利用塗膜8將較同心區域13中最靠外的區域13t更靠外側填埋的方式定位。角附近區域19中，開口內區域19b以利用塗膜8將開口區域19a內填埋的方式定位。角區域14以利用塗膜8將較角附近區域19更靠外側填埋的方式定位。由此，藉由積層步驟中的各構件2、3的自重或賦予按壓力等，各區域12m～12p、13m～13t、19a、19b、14a～14d擴張，藉此容易將各區域12m～12p、13m～13t、19a、19b、14a～14d彼此連接，無塗膜形成區域20確實地消失。
本實施形態中，線狀區域21形成在區域13t與開口區域19a的圓弧部19a1 之間。即，無塗膜形成區域20包含分割出區域13t與開口區域19a的圓弧部19a1 的四個線狀區域21。由此，當於積層步驟中將各構件2、3介隔塗膜8而積層時，線狀區域21作為空氣退避至連接區域5外的退避部而發揮功能。因此，與所述實施形態同樣，可抑制於燒結後的銅燒結體4的內部、或銅燒結體4與各構件2、3之間殘存孔隙。
以上，對本實施形態的各種實施形態進行了說明，但本發明並非限定於所述實施形態者，亦可以不變更申請專利範圍各項中記載的要旨的範圍加以變形，或應用於其他實施形態。
例如，沿著相同的假想直線的各區域12a～12c、及沿著相同的假想直線的各區域12d～12h亦可並非在直徑方向上彼此隔開地排列，可在直徑方向上彼此連結而連續地延伸。另外，沿著相同的假想圓的各區域13a、沿著相同的假想多邊形的各區域13b、及沿著相同的假想圓的各區域13c～13f亦可並非在圓周方向上彼此隔開地排列，可在圓周方向上彼此連結而連續地延伸。
並不限於使一個區域12c位於在直徑方向上相鄰的各區域13a與各區域13b之間，亦可使多個區域12c位於此處。
分割區域11所包含的多個區域12b、12c、區域12d～12h、區域13a、13b及區域13c～13f亦可並非越為配置於靠近連接區域5的邊緣部6的位置的區域則面積越大。
所述第1實施形態、第8實施形態中，塗膜形成區域10亦可不包含角區域14，所述第2實施形態～第7實施形態中，塗膜形成區域10亦可包含角區域14。
所述實施形態中，對塗膜形成區域10被多個線狀區域21分割為多個區域的例子進行了說明，但線狀區域21只要為至少一個即可，塗膜形成區域10亦可被一個線狀區域21分割為兩個區域。
所述第5實施形態中，對各三角狀區域16為塗膜8的形成區域的例子進行了說明，但亦可為各三角狀區域16中不形成塗膜8，而於各三角狀區域16之間的區域形成塗膜8。即，供塗膜8形成的塗膜形成區域10亦可呈X字狀。
所述實施形態中，對格子區域15、17、18中的列及行整齊排列的例子進行了說明，但格子區域15、17、18中的列及行亦可錯位而彼此不同地排列。
1‧‧‧連接體 2、3‧‧‧構件 2a‧‧‧連接面 4‧‧‧銅燒結體 5‧‧‧連接區域 6‧‧‧邊緣部 6a～6d‧‧‧邊 8‧‧‧塗膜 9、9A～9G‧‧‧印刷圖案 10‧‧‧塗膜形成區域 11‧‧‧分割區域 12‧‧‧放射區域 12a～12h、12m～12p‧‧‧區域 13‧‧‧同心區域 13a～13f、13m～13t‧‧‧區域 14‧‧‧角區域 14a～14d‧‧‧區域 15、17、18‧‧‧格子區域 15a、17a、18a‧‧‧區域 16‧‧‧三角狀區域 19‧‧‧角附近區域 19a‧‧‧開口區域 19a1 、19a2 ‧‧‧圓弧部 19a3 ‧‧‧邊部 19b‧‧‧開口內區域 20‧‧‧無塗膜形成區域 21、21a～21c‧‧‧線狀區域 100‧‧‧先前的印刷圖案 A、B、C、D‧‧‧點 P‧‧‧中心 R1～R4‧‧‧角部
圖1是藉由第1實施形態的構件連接方法連接而成的連接體的示意剖面圖。 圖2是表示第1實施形態的印刷步驟中所形成的印刷圖案的平面圖。 圖3（a）、圖3（b）是將先前與本實施形態的印刷圖案加以比較來表示的圖。 圖4（a）、圖4（b）是表示使用超音波觀察裝置分別對先前及本實施形態的燒結後的銅燒結體與第一構件的界面進行觀察所得的結果的照片。 圖5是表示第2實施形態的印刷圖案的平面圖。 圖6是表示第3實施形態的印刷圖案的平面圖。 圖7是表示第4實施形態的印刷圖案的平面圖。 圖8是表示第5實施形態的印刷圖案的平面圖。 圖9是表示第6實施形態的印刷圖案的平面圖。 圖10是表示第7實施形態的印刷圖案的平面圖。 圖11是表示第8實施形態的印刷圖案的平面圖。
2‧‧‧構件
2a‧‧‧連接面
5‧‧‧連接區域
6‧‧‧邊緣部
6a~6d‧‧‧邊
8‧‧‧塗膜
9‧‧‧印刷圖案
10‧‧‧塗膜形成區域
11‧‧‧分割區域
12‧‧‧放射區域
12a~12c‧‧‧區域
13‧‧‧同心區域
13a、13b‧‧‧區域
14‧‧‧角區域
14a~14d‧‧‧區域
20‧‧‧無塗膜形成區域
21、21a~21c‧‧‧線狀區域
A、B、C、D‧‧‧點
P‧‧‧中心
R1~R4‧‧‧角部

Claims (5)

  1. 一種構件連接方法，其為藉由銅燒結體而將第一構件與第二構件連接的構件連接方法，其包括：印刷步驟，於所述第一構件與所述第二構件的連接區域，以規定的印刷圖案形成連接用的銅膏的塗膜；積層步驟，介隔所述塗膜將所述第一構件與所述第二構件積層；以及燒結步驟，將所述塗膜燒結而形成所述銅燒結體，且藉由所述銅燒結體而將所述第一構件與所述第二構件連接，所述印刷步驟中，於所述印刷圖案中形成供所述塗膜形成的塗膜形成區域、及不形成所述塗膜的無塗膜形成區域，所述塗膜形成區域藉由以將所述連接區域的邊緣部中彼此隔開的第一點與第二點連結的方式設置的一個或多個所述無塗膜形成區域而被分割為多個區域，所述塗膜形成區域中的所述多個區域包含自所述連接區域的中心側向所述邊緣部呈放射狀排列的區域及圍繞所述連接區域的中心呈同心狀排列的區域自所述連接區域的中心側向所述邊緣部呈放射狀交替配置的部分。
  2. 如申請專利範圍第1項所述的構件連接方法，其中所述連接區域具有多個邊，且所述無塗膜形成區域是以將位於彼此不同的邊上的所述第一點與所述第二點連結的方式設置。
  3. 如申請專利範圍第1項或第2項所述的構件連接方法，其中所述連接區域為矩形形狀的區域，且所述塗膜形成區域包含對應於所述連接區域的角部而配置的區域。
  4. 如申請專利範圍第1項或第2項所述的構件連接方法，其中所述塗膜形成區域中的所述多個區域越為配置於靠近所述連接區域的所述邊緣部的位置的區域則面積越大。
  5. 如申請專利範圍第1項或第2項所述的構件連接方法，其中所述第一構件及所述第二構件中的至少一者為半導體元件。
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