CN111223814A - 面板及其制造方法 - Google Patents

面板及其制造方法 Download PDF

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CN111223814A
CN111223814A CN201911041367.7A CN201911041367A CN111223814A CN 111223814 A CN111223814 A CN 111223814A CN 201911041367 A CN201911041367 A CN 201911041367A CN 111223814 A CN111223814 A CN 111223814A
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transparent conductive
conductive layer
panel
substrate
layer
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陈少宏
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Innolux Corp
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Abstract

本发明公开了一种用于制造一面板的方法，包括下述步骤：提供一基板；在该基板上形成一第一透明导电层；以具有低还原能力的一气体的一等离子体处理该第一透明导电层；及在该第一透明导电层上形成一第一绝缘层来制得一面板，其中该面板的一穿透度大于或等于90％且小于100％。本发明还提供由本发明的上述方法制造的一面板。

Description

面板及其制造方法
技术领域
本发明涉及一种面板及其制造方法领域，更具体地，本发明涉及具有高穿透度的一面板及其制造方法。
背景技术
现在，多数电子装置具有一或以上个面板。至少一透明导电层被使用在这些面板中，其通常包括一透明导电氧化物，例如一金属氧化物。然而，在金属氧化物中的金属经常被还原，导致面板的穿透度下降。
因此，希望提供一面板及其制造方法来降低上述问题。
发明内容
本发明提供一种用于制造一面板的方法，包括下述步骤：提供一基板；在基板上形成一第一透明导电层；以具有低还原能力的一气体的一等离子体处理第一透明导电层；及在第一透明导电层上形成一第一绝缘层来制得一面板，其中面板的一穿透度大于或等于90％且小于100％。
本发明也提供由本发明的上述方法制造的一面板，其中面板包括：一基板；一第一透明导电层，设置于基板上；及一第一绝缘层，设置于第一透明导电层上，其中以具有低还原能力的一气体的一等离子体处理第一透明导电层，而面板的一穿透度大于或等于90％且小于100％。
本发明还提供一电子装置，其包括上述面板。
从下列的详细描述并结合附图，本发明的其他的新颖特征将变得更为清楚。
附图说明
图1A-1D为本发明一实施例揭示用于形成面板的过程的剖面图；
图2A-2C为本发明另一实施例揭示用于形成面板的过程的剖面图。
符号说明：
11 基板
12 栅极
13 第二绝缘层
15 半导体层
16 第一透明导电层
17 第一绝缘层
18 第二透明导电层
141 第一电极
142 第二电极
151 底层
152 顶层
T1、T2、T3、T4、T5、T6、T7、T8 厚度
TFT 电晶体
具体实施方式
当结合附图阅读时，下列实施例用于清楚地展示本发明的上述及其他技术内容、特征及/或效果。通过具体实施方式的阐述，人们将进一步了解本发明所采用的技术手段及效果，以达到上述的目的。此外，由于本发明所揭示的内容应易于理解且可为本领域技术人员所实施，因此，所有不脱离本发明的概念的相等置换或修改应包含在权利要求中。
此外，说明书及权利要求中例如“第一”或“第二”等序数仅为描述所请求的元件，而不代表或不表示所请求的元件具有任何顺序的序数，且不是所请求的元件及另一所请求的元件之间或制造方法的步骤之间的顺序。这些序数的使用仅是为了将具有特定名称的一个请求元件与具有相同名称的另一请求元件区分开来。
此外，说明书及权利要求中例如“上方”、“上面”或“之上”不仅指与另一元件直接接触，也可指与另一元件间接接触。相同地，说明书及权利要求中例如“下方”、或“下面”不仅指与另一元件直接接触，也可指与另一元件间接接触。
此外，说明书及权利要求中例如“连接”一词不仅指与另一元件直接连接，也可指与另一元件间接连接及电性连接。
此外，当值在第一值到第二值的范围内时，该值可以为第一值、第二值、或第一值及第二值之间的另一个值。
此外，“约”、“接近”、“几乎”、“大约”、或“基本上”一词通常表示在给定值或范围的20％、10％、5％、3％、2％、1％、或在0.5％内。在此处给出的数量为近似数量，即，在缺少“约”、“接近”、“几乎”、“大约”、或“基本上”的具体描述的情况下，“约”、“接近”、“几乎”、“大约”、或“基本上”的含义仍然可以被暗示。另外，本发明所揭示的不同实施例的技术特征可结合形成另一实施例。
图1A-1D为本发明一实施例揭示用于形成面板的过程的剖面图。
如图1A所揭示，提供一基板11。基板11可为一石英基板、一玻璃基板、一晶圆、或一蓝宝石基板等。基板11也可为一可挠性基板或一膜，而其材料可包括聚碳酸酯(polycarbonate，PC)、聚酰亚胺(polyimide，PI)、聚丙烯(polypropylene，PP)、聚对苯二甲酸乙二醇酯(polyethylene terephthalate，PET)、其他塑料或聚合物材料、或其组合。然而，本发明不限于此。
接着，一栅极12形成于基板11上。栅极12的材料可包括金属(例如铜、铝、钛、铬、或钼)、其合金、金属氧化物、金属氮氧化物、或其他电极材料，但本发明不限于此。另外，栅极12可具有一单层结构或一多层结构。在本发明一实施例中，栅极12可具有一双层结构，其中栅极12的一底层可为一钼层，而栅极12的一顶层可为一氮化钼层，但本发明不限于此。此外，在本发明一实施例中，栅极12的一厚度T1可为0.2μm至1μm的范围内(0.2μm≤T1≤1μm)，但本发明不限于此。
应注意在说明书及权利要求中的“一特定层的一厚度”一词语是指沿基板的一法线方向在一相对平坦的区域中测量的最大厚度。
然后，一第二绝缘层13形成于基板11上。第二绝缘层13的材料可包括氧化硅、氮氧化硅、氮化硅、氧化铝、树脂、聚合物、光阻或其组合，但本发明不限于此。在本发明一实施例中，第二绝缘层13的材料可包括氮化硅，但本发明不限于此。在本发明一实施例中，第二绝缘层13的一厚度T2可为0.3μm至1μm的范围内(0.3μm≤T2≤1μm)，但本发明不限于此。
在第二绝缘层13形成之后，一半导体层15形成于第二绝缘层13上。半导体层15的材料可包括非晶硅、多晶硅、或金属氧化物，例如IGZO(铟镓锌氧化物)、AIZO(铝铟锌氧化物)、HIZO(铪铟锌氧化物)、ITZO(铟锡锌氧化物)、IGZTO(铟镓锌锡氧化物)、或IGTO(铟镓锡氧化物)，但本发明不限于此。另外，半导体层15可具有一单层结构或一多层结构。在本发明一实施例中，半导体层15可具有一双层结构，其中一底层151可为一非晶硅层，而一顶层152可为一掺杂非晶硅层。在本发明另一实施例中，半导体层15可具有一单层结构，而半导体层15可为一非晶硅层或一掺杂非晶硅层。然而，本发明不限于此。此外，在本发明一实施例中，底层151的一厚度T3可为0.1μm至0.3μm的范围内(0.1μm≤T3≤0.3μm)，而顶层152的一厚度T4可为0.02μm至0.05μm的范围内(0.02μm≤T4≤0.05μm)，但本发明不限于此。
然后，一第一电极141及一第二电极142形成于半导体层15上，其中第一电极141及第二电极142与半导体层15电性连接(尤其是半导体层15的顶层152)。因此，可制得一电晶体TFT，其包括：栅极12、对应栅极12而设置的半导体层15、及与半导体层15电性连接的第一电极141和第二电极142。在本发明一些实施例中，第一电极为一源极，而第二电极为一漏极。在本发明其他实施例中，第一电极为一漏极，而第二电极为一源极，但本发明不限于此。第一电极141及第二电极142的材料可包括金属(例如铜、铝、钛、铬、或钼)、其合金、金属氧化物、金属氮氧化物、其他电极材料、或其组合，但本发明不限于此。另外，第一电极141及第二电极142可具有一单层结构或一多层结构，且相似的使用上述材料。在本发明另一实施例中，第一电极141及第二电极142可具有一三层结构，但本发明不限于此。此外，在本发明一实施例中，第一电极141及/或第二电极142的厚度T5可为0.2μm至1μm的范围内(0.2μm≤T5≤1μm)，但本发明不限于此。
如图1B所揭示，一第一透明导电层16形成于基板11上。于此，电晶体TFT与第一透明导电层16电性连接。第一透明导电层的材料可包括任何具有高导电性及高穿透度的导电材料。例如，第一透明导电层的材料可包括一透明导电氧化物，例如一金属氧化物。透明导电氧化物的示例可包括，但不限于，ITO(铟锡氧化物)、IZO(铟锌氧化物)、ITZO(铟锡锌氧化物)、IGZO(铟镓锌氧化物)、AZO(铝锌氧化物)、或其组合。在本发明一实施例中，第一透明导电层16的材料可包括ITO，但本发明不限于此。此外，在本发明一实施例中，第一透明导电层16的一厚度T6可为0.03μm至0.2μm的范围内(0.03μm≤T6≤0.2μm)，但本发明不限于此。
在第一透明导电层16形成之后，以一等离子体处理第一透明导电层16。如图1B所揭示，H2等离子体经常用来处理第一透明导电层16。然而，H2等离子体内的氢离子会还原包括在第一透明导电层16中的金属，导致第一透明导电层16的穿透度下降。
因此，在本发明的方法中，使用具有低还原能力的气体处理第一透明导电层16。在本发明中，“具有低还原能力的气体”是指一气体还原第一透明导电层16中所包含金属的能力小于H2还原第一透明导电层16中所包含金属的能力。在本发明一些实施例中，具有低还原能力的气体可包括氮氧化物(N2O)、氧气(O2)、氮气(N2)、惰性气体，例如为氩气(Ar)或氦气(He)、或其组合，但本发明不限于此。因用于本发明的气体具有比H2低的还原能力，所以第一透明导电层16所包含金属的被还原状况可被降低。当第一透明导电层16所包含金属的被还原状况降低时，第一透明导电层16的穿透度可被改善，导致所制得面板的穿透度增加。
以具有低还原能力的气体的等离子体处理第一透明导电层16之后，基板11的温度可被增加。另外，施加等离子体的时间、施加等离子体的功率、施加的等离子体中含有的气体、及施加等离子体的气体流量没有特别限制，且可根据第一透明导电层16的表面状态或基板11所需的温度而调整。
如图1C所揭示，第一透明导电层16处理之后，一第一绝缘层17形成于第一透明导电层16上。第一绝缘层17的材料可为任何具有高电阻、能减少水气或氧气入侵的材料。第一绝缘层17的示例可包括氧化硅、氮氧化硅、氮化硅、或其组合，但本发明不限于此。于此，用于形成第一绝缘层17的材料可包括甲硅烷(SiH4)或包括硅的化合物，但本发明不限于此。另外，第一绝缘层17可由一沉积过程形成，例如为一化学气相沉积过程，但本发明不限于此。此外，在本发明一实施例中，第一绝缘层17的一厚度T7可为0.3μm至1μm的范围内(0.3μm≤T7≤1μm)，但本发明不限于此。于此，第一透明导电层16的厚度T6小于第一绝缘层17的厚度T7。
如图1D所揭示，第一绝缘层17形成之后，一第二透明导电层18形成于第一绝缘层17上。第二透明导电层18的材料相似于第一透明导电层16，而在此不再重复描述。另外，在本发明一实施例中，第二透明导电层18的一厚度T8可为0.03μm至0.2μm的范围内(0.03μm≤T8≤0.2μm)，但本发明不限于此。
经过上述过程，制得本实施例的一面板，其包括：一基板11、设置于基板11上的一第一透明导电层16、及设置于第一透明导电层16上的一第一绝缘层17。另外，本实施例的面板还可包括：设置于第一透明导电层16与基板11之间的一第二绝缘层13、设置于第一绝缘层17上的一第二透明导电层18、及设置于基板11上且与第一透明导电层16电性连接的一电晶体TFT。此外，本实施例的面板还可包括：设置于第二透明导电层18上的一显示介质层(图中未揭示)、及设置相对于基板11的一相对基板(图中未揭示)，其中显示介质层设置于基板11及相对基板之间。
在本发明一些实施例中，面板可为一液晶显示面板(LCD)。例如，LCD面板可为一面内切换液晶显示面板(IPS)或一边缘场切换液晶显示面板(FFS)，但本发明不限于此。在本发明一些实施例中，第一绝缘层17设置于第一透明导电层16及第二透明导电层18之间以形成用于触发显示介质层中的液晶分子旋转的一电容。
在一些实施例中，以具有低还原能力的气体的等离子体处理第一透明导电层16，因此面板的穿透度可大于或等于90％且小于100％(90％≤穿透度＜100％)。在一些实施例中，面板的穿透度可大于或等于93％且小于或等于97％(93％≤穿透度≤97％)。在另一实施例中，面板的穿透度可大于或等于95％且小于或等于97％(95％≤穿透度≤97％)。应注意面板的穿透度由测量面板的TFT基板所定义，一TFT基板的结构如图1D所揭示，但本发明不限于此。更具体地，应在具有第一透明导电层16，但不具有不透明材料例如金属电极(未揭示)或金属接线(未揭示)的区域中测量一TFT基板的穿透度。
图2A-2C为本发明另一实施例揭示用于形成一面板的一过程的剖面图。
本实施例的用于制造面板的过程相似于揭示在图1A-1D中的上述实施例，除了下述差异之外。
如图2A所揭示，在基板11上形成栅极12之后，第一透明导电层16形成于基板11上，随后以具有低还原能力的一气体的一等离子体处理第一透明导电层16。接着，如图2B所揭示，一第一绝缘层17形成于第一透明导电层16及栅极12上，且第一绝缘层17具有至少一通孔。然后，如图2C所揭示，在形成第一绝缘层17之后，一电晶体TFT形成于基板11上，且电晶体TFT通过通孔与第一透明导电层16电性连接。然后，第二绝缘层13及第二透明导电层18依序形成，以制得本实施例的面板。
如图2A-2C所揭示，本实施例的特征(例如，每一层的材料或厚度、用于形成面板的每一层的过程及用于处理第一透明导电层16的过程)相似于揭示在图1A-1D的前述实施例，而在此不再重复描述。本发明也提供具有一高穿透度面板的一电子装置，其可包括上述任一面板(例如，图1D或图2C所揭示的面板)，其中，面板包括一基板11、设置于基板11上的一第一透明导电层16、及设置于第一透明导电层16上的一第一绝缘层17。于此，以具有低还原能力的一气体的一等离子体处理第一透明导电层16，而面板的一穿透度大于或等于90％且小于100％。
在上述实施例中，公开了一种面板，例如可用于显示装置上的显示面板。然而，本发明不限于此。尤其是，以具有低还原能力的一气体的一等离子体处理透明导电层，然后在透明导电层上形成一绝缘层的过程可用于任何其他电子装置的面板，其他电子装置例如可为一触控装置、一感测装置、一发光装置、或其他具有将一绝缘层设置于一透明导电层上以制得具有高穿透度的一面板的装置。
虽然本发明已结合实施例说明，但应当理解在不脱离本发明下述的权利要求的精神和范围的情况下，可以进行许多其他可能的组合、修改和变化。

Claims (10)

1.一种用于制造一面板的方法，其特征在于，包括下述步骤：
提供一基板；
在该基板上形成一第一透明导电层；
以具有低还原能力的一气体的一等离子体处理该第一透明导电层；及
在该第一透明导电层上形成一第一绝缘层，其中该面板的一穿透度大于或等于90％且小于100％。
2.根据权利要求1所述的方法，其特征在于，其中该面板的该穿透度大于或等于93％且小于或等于97％。
3.根据权利要求1所述的方法，其特征在于，其中该气体的还原能力较H2的还原能力弱。
4.根据权利要求3所述的方法，其特征在于，其中该气体包括N2O、Ar、O2、N2、He、或其组合。
5.根据权利要求1所述的方法，其特征在于，其中该第一透明导电层的厚度小于该第一绝缘层的厚度。
6.根据权利要求1所述的方法，其特征在于，还包括在提供该基板的该步骤及在该基板上形成该第一透明导电层的该步骤之间，形成一第二绝缘层的步骤。
7.根据权利要求1所述的方法，其特征在于，还包括在该第一透明导电层上形成该第一绝缘层的该步骤之后，在该第一绝缘层上形成一第二透明导电层的步骤。
8.根据权利要求1所述的方法，其特征在于，还包括在该基板上形成该第一透明导电层的该步骤之前或之后，在该基板上形成一电晶体的步骤，其中该电晶体与该第一透明导电层电性连接。
9.根据权利要求1所述的方法，其特征在于，其中该第一透明导电层的一材料包括ITO、IZO、ITZO、IGZO、AZO、或其组合。
10.一面板，其特征在于，包括：
一基板；
一第一透明导电层，设置于该基板上；及
一第一绝缘层，设置于该第一透明导电层上；
其中以具有低还原能力的一气体的一等离子体处理该第一透明导电层，而该面板的一穿透度大于或等于90％且小于100％。
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