US20150115258A1 - Array substrate for liquid crystal display device and method of manufacturing the same - Google Patents

Array substrate for liquid crystal display device and method of manufacturing the same Download PDF

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US20150115258A1
US20150115258A1 US14/499,366 US201414499366A US2015115258A1 US 20150115258 A1 US20150115258 A1 US 20150115258A1 US 201414499366 A US201414499366 A US 201414499366A US 2015115258 A1 US2015115258 A1 US 2015115258A1
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source
drain
metal
layer
pattern
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US14/499,366
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Jung-Sun Beak
Jung-ho Bang
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LG Display Co Ltd
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LG Display Co Ltd
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Assigned to LG DISPLAY CO., LTD. reassignment LG DISPLAY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BANG, JUNG-HO, BEAK, JUNG-SUN
Publication of US20150115258A1 publication Critical patent/US20150115258A1/en
Priority to US15/360,468 priority Critical patent/US9842915B2/en
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Definitions

  • the present disclosure relates to an array substrate for a liquid crystal display device (LCD), and more particularly, to an array substrate for an LCD including a coplanar type thin film transistor (TFT) and a method of manufacturing the same.
  • LCD liquid crystal display device
  • TFT coplanar type thin film transistor
  • LCD liquid crystal display device
  • PDP plasma display panel
  • OLED organic light emitting diode display
  • the LCD has advantages of low power consumption due to low driving voltage and portability, and thus is widely used in various fields, such as laptop computer, monitor, spacecraft, and airplane.
  • an active matrix LCD device in which a thin film transistor (TFT) as a switching element is formed in each of pixels arranged in a matrix, has been commonly used.
  • TFT thin film transistor
  • the TFT are categorized into various types according to positions of a gate electrode, for example, a staggered type, an inverted staggered type, and a coplanar type.
  • the coplanar type TFT has excellent element property because an active layer thereof is not damaged when etching source and drain electrodes.
  • the coplanar type TFT has a structure that a gate electrode, and the source and drain electrodes are located over the active layer.
  • FIG. 1 is a cross-sectional view illustrating the coplanar type TFT according to the related art.
  • a buffer layer 11 is formed on a substrate 10 .
  • An active layer 24 is formed on the buffer layer 11 and includes a channel region 24 a and source and drain regions 24 b and 24 c at both sides, and a first insulating layer 15 a is formed on the active layer 24 .
  • a gate electrode 21 is formed on the first insulating layer 15 a, and a second insulating layer 15 b is formed on the gate electrode 21 and includes contact holes exposing the source and drain regions 24 b and 24 c.
  • Source and drain electrodes 22 and 23 are formed on the second insulating layer 15 b and contact the source and drain regions 24 b and 24 c , respectively.
  • the active layer 24 , the gate electrode 21 , and the source and drain electrodes 22 and 23 as described above form a coplanar type TFT.
  • a third insulating layer 15 c is formed on the source and drain electrodes 22 and 23 and includes a contact hole exposing the drain electrode 23 .
  • a pixel electrode 18 is formed on the third insulating layer 15 c and contacts the drain electrode 23 .
  • the active layer 24 is made of a ZnO based semiconductor material, thus has a high mobility and meets a constant current test condition, and thus is applicable to a large-sized display.
  • ZnO is a material that can have a conductor property, a semiconductor property, or a nonconductor property according to a content of oxygen. Accordingly, the active layer using ZnO is applicable to a large-sized display, for example, LCD or OLED.
  • the second insulating layer 15 b is formed to prevent the active layer 24 of the ZnO based material from being exposed, and thus a number of mask processes increases.
  • the present invention is directed to an array substrate for a liquid crystal display device (LCD) and method of manufacturing the same that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
  • LCD liquid crystal display device
  • An advantage of the present invention is to provide an array substrate for a liquid crystal display device (LCD) and method of manufacturing the same that can decrease steps of production processes and improve productivity.
  • LCD liquid crystal display device
  • an array substrate for a liquid crystal display device may include a substrate; a semiconductor layer on the substrate; a gate electrode on the semiconductor layer; source and drain electrodes on and in contact with the semiconductor layer; and an oxide layer on the gate electrode, the oxide layer including a plurality of metal atoms, wherein each of the source and drain electrodes includes a pattern of metal substantially made of the plurality of metal atoms.
  • a method of an array substrate for a liquid crystal display device may include forming semiconductor layer on a substrate; forming a gate electrode on the semiconductor layer; forming a first metal layer and a second metal layer sequentially on the gate electrode; patterning the first metal layer and the second metal layer to form a first metal pattern and a second metal pattern, respectively; etching the second metal pattern to expose a portion of the first metal pattern and form a first source pattern and a first drain pattern; and oxidizing the exposed portion of the first metal pattern to form an oxide layer, a second source pattern and a second drain pattern, wherein the first and second source patterns form a source electrode, and the first and second drain patterns form a drain electrode.
  • FIG. 1 is a cross-sectional view illustrating the coplanar type TFT according to the related art
  • FIG. 2 is a cross-sectional view illustrating an array substrate for an LCD according to an embodiment of the present invention.
  • FIGS. 3A to 3H are cross-sectional views illustrating a method for manufacturing an array substrate of an LCD according to an embodiment of the present invention.
  • a thin film transistor (TFT) of the present invention may be a polycrystalline type TFT, an amorphous type TFT, or oxide type TFT.
  • the oxide TFT is described in the embodiment below by way of example.
  • FIG. 2 is a cross-sectional view illustrating an array substrate for a liquid crystal display device (LCD) according to an embodiment of the present invention.
  • LCD liquid crystal display device
  • a buffer layer 111 is formed on a substrate 110 .
  • the buffer layer 111 may be eliminated.
  • An active layer 124 as a semiconductor layer is formed on the buffer layer 111 and includes a channel region 124 a and source and drain regions 124 b and 124 c at both sides, and a first insulating layer 115 a is formed on the channel region 124 a and covers a part of the channel region 124 a.
  • a gate electrode 121 is formed on the first insulating layer 115 a.
  • An oxide layer 126 covers the gate electrode 121 , substantially corresponding to the channel region 124 a.
  • Second source and drain patterns 122 b and 123 b cover and contact the source and drain regions 124 b and 124 c, respectively.
  • First source and drain patterns 122 a and 123 a are formed on and substantially have the same pattern as the second source and drain patterns 122 b and 123 b, respectively.
  • the first and second source patterns 122 a and 122 b form a source electrode 122
  • the first and second drain patterns 123 a and 123 b form a drain electrode 123 .
  • the active layer 124 , the gate electrode 121 , and the source and drain electrodes 122 and 123 as described above form a coplanar type TFT.
  • a second insulating layer 115 b is formed entirely on the second substrate 110 having the source and drain electrodes 122 and 123 , and includes a contact hole exposing a part of the drain electrode 123 .
  • a pixel electrode 118 is formed on the second insulating layer 115 b and contacts the drain electrode 123 via the contact hole of the second insulating layer 115 b.
  • the active layer 124 is formed of a ZnO based semiconductor material, for example, IGZO.
  • ZnO is a material that can have a conductor property, a semiconductor property, or a nonconductor property according to a content of oxygen. Accordingly, the active layer 124 using ZnO is applicable to a large-sized display, for example, LCD or OLED.
  • a concentration of oxygen in a reaction gas during the sputtering process by adjusting a concentration of oxygen in a reaction gas during the sputtering process, a concentration of carrier in the active layer 124 can be adjusted, and thus properties of the TFT can be adjusted.
  • the active layer 124 is made of the ZnO based semiconductor material, it has a high mobility and meets a constant current test condition, and thus is applicable to a large-sized display.
  • the active layer 124 is covered by the source and drain electrodes 122 and 123 and the oxide layer 126 .
  • the oxide layer 126 is formed by oxidizing a material that is used to form the second source and drain patterns 122 b and 123 b and is located at a region corresponding to the channel region 124 a. Accordingly, the oxide layer 126 covers the channel region 124 a , and the source and drain electrodes 122 and 123 cover the source and drain regions 124 b and 124 c, respectively. Accordingly, the second insulating layer ( 15 b of FIG. 1 ) of the related art is eliminated. Thus, a number of mask processes can be reduced, and production cost can be reduced and productivity can be improved.
  • the oxide layer 126 contacts the second source and drain patterns 122 b and 123 b at both sides.
  • the oxide layer 126 may extend such that it covers a part of the source and drain regions 124 b and 124 c.
  • FIGS. 3A to 3H are cross-sectional views illustrating a method for manufacturing an array substrate of an LCD according to an embodiment of the present invention.
  • the ZnO based semiconductor material is deposited on the buffer layer 111 to form the active layer 124 , and then the first insulating layer 115 a and the gate electrode 121 are sequentially formed on the active layer 124 .
  • the ZnO bsed semicondutor material is patterned in a first mask process to form the active layer 124 .
  • the ZnO bsed semicodncutor material may be formed , for example, using a complex target of Ga 2 O 3 , In 2 O 3 and ZnO in a sputtering method, and alternatively, in a CVD (chemical vapor deposition) method, or ALD (atomic layer deposition) method.
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • the first insulating layer 115 a may be formed of an inorganic insulating material, for example, SiNx or SiO 2 , or a high dielectric constant oxide material, for example, hafnium oxide or aluminum oxide.
  • the first insulating material 115 a may be formed in a CVD method, or PECVD (plasma enhanced CVD) method.
  • the gate electrode 121 may be formed of a conductive material having a low resistance and being opaque, for example, Al, Al alloy, W, Cu, Ni, Cr, Mo, Ti, Pt or Ta, or a transparent conductive material, for example, ITO or IZO.
  • the gate electrode 121 may have a multiple-layered structure using at least two of the above materials.
  • the first gate insulating material and the gate electrode material are deposited entirely on the substrate 110 and patterned in a second mask process to form the first insulating layer 115 a and the gate electrode 121 .
  • the first insulating layer 115 a and the gate electrode 121 may be formed using a dry etching process.
  • a first metal layer 113 and a second metal layer 114 are sequentially formed on the substrate 110 having the gate electrode 121 .
  • the first metal layer 113 may be formed of a metal having a low contact resistance for a conductor to meet a high mobility and a constant current test condition, for example, Al, Al alloy, Cu, Ni, Cr, Ti, Pt, Ta, Ti alloy, Mo or Mo alloy.
  • the first metal layer 113 may have a contact resistance less than the second metal layer 114 in connection with the source and drain regions 124 b and 124 c.
  • the second metal layer 114 may not be in direct contact with the source and drain regions 124 b and 124 c, a contact resistance of the second metal layer 114 may not be considered. Accordingly, the second metal layer 114 may be formed of a metal having a specific resistance less than the first metal layer 113 , for example, Cu, Au or Mo.
  • the first metal layer 113 may have a thickness of about 200 angstroms or less to meet a high mobility and a constant current test condition, and preferably has about 100 angstroms to about 200 angstroms.
  • a photoresist layer 128 is formed entirely on the substrate 110 having the first and second metal layers 113 and 114 .
  • exposing the photoresist layer 128 selectively to light is conducted.
  • the light exposure may be conducted using a single photo mask or a halftone mask 130 .
  • the halftone mask 130 is preferably used to reduce a number of mask processes.
  • the halftone mask 130 includes a transmissive portion I transmitting, a semi-transmissive portion II, and a blocking portion III.
  • a developing process of the photoresist layer 128 is conducted. Accordingly, a portion of the photoresist layer 128 corresponding to the transmissive portion I is removed, a portion of the photoresist layer 128 corresponding to the semi-transmissive portion II is partially removed to become a first photoresist pattern 128 a, and a portion of the photoresist layer 128 corresponding to the blocking portion III remains and becomes a second photoresist pattern 128 b that is thicker than the first photoresist pattern 128 a.
  • the second photoresist pattern 128 b is located at each of both sides of the first photoresist pattern 128 a. In other words, the second photo resist patterns 128 b are located corresponding to the source and drain regions 124 b and 124 c.
  • the first and second metal layers 113 and 114 are patterned using the first and second photoresist patterns 128 a and 128 b.
  • the first and second metal layers 113 and 114 are etched using the first and second photoresist patterns 128 a and 128 b to form the first and second metal patterns 113 a and 114 a.
  • This etching process may be a wet etching process.
  • the first and second metal patterns 113 a and 114 a are formed continuously over the active layer 124 .
  • an ashing process is conducted to remove the first photoresist pattern 128 a and partially remove the second photoresist patterns 128 b by a thickness of the first photoresist pattern 128 a.
  • the ashed second photoresist patterns 128 b corresponding to the source and drain regions 124 b and 124 c become third and fourth photoresist patterns 128 c and 128 d.
  • the second metal pattern 114 a is etched using the third and fourth photoresist patterns 128 c and 128 d.
  • This etching process may be a dry etching process. Accordingly, the first source and drain patterns 122 a and 123 a spaced apart from each other are formed.
  • a portion of the first metal pattern 113 a exposed between the third and fourth photoresist patterns 128 c and 128 d is oxidized.
  • an oxygen plasma treatment or a thermal treatment under oxygen atmosphere for a predetermined time is conducted to oxidize the exposed portion of the first metal pattern 113 a. Accordingly, the exposed portion of the first metal pattern 113 a becomes the oxide layer 126 .
  • the oxide layer 126 may be made of at least one of AlxOx, AlxOx alloy, CuxOx, NixOx, CrxOx, TixOx, PtxOx, TaxOx, TixOx alloy, MoxOx and MoxOx alloy.
  • the oxide layer 126 is a nonconductor and functions as an insulator. Accordingly, the first metal pattern 113 a is modified into the second source and drain patterns 122 b and 123 b and the oxide layer 126 between the second source and drain patterns 122 b and 123 b.
  • the third and fourth photoresist patterns 128 c and 128 d are stripped using an ashing process.
  • the source electrode 122 including the first and second source patterns 122 a and 122 b, and the drain electrode 123 including the first and second drain patterns 123 a and 123 b are formed.
  • the second insulating layer 115 b is formed entirely on the substrate 110 having the source and drain electrodes 122 and 123 . Then, the second insulating layer 115 b is patterned in a fourth mask process to form a contact hole exposing a part of the drain electrode 123 .
  • a third conductive layer is formed entirely on the second insulating layer 115 b and is patterned in a fifth mask process to form a pixel electrode 118 contacting the drain electrode 123 through the contact hole of the second insulating layer 115 b.
  • an array substrate of an LCD according to an embodiment is manufactured.
  • the active layer 124 is made of the ZnO based material, and thus the TFT has a high mobility and meets a constant current test condition.
  • the LCD is applicable to a large-sized display.
  • the first metal pattern 113 a is used to form the source and drain electrodes 122 and 123 and cover the active layer 124 , and a portion of the first metal pattern 113 a corresponding to the channel region 124 a is oxidized and covers the channel region 124 a. Accordingly, the second insulating layer ( 15 b of FIG. 1 ) according to the related art is eliminated, and thus a number of mask processes can be reduced, thereby reducing production cost and improving productivity.

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Abstract

An array substrate for a liquid crystal display device includes a substrate; a semiconductor layer on the substrate; a gate electrode on the semiconductor layer; source and drain electrodes on and in contact with the semiconductor layer; and an oxide layer on the gate electrode, the oxide layer including a plurality of metal atoms, wherein each of the source and drain electrodes includes a pattern of metal substantially made of the plurality of metal atoms.

Description

  • This application claims the benefit of Korean Patent Application No. 10-2013-0131396, filed on Oct. 31, 2013, which is hereby incorporated by reference for all purposes as if fully set forth herein.
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present disclosure relates to an array substrate for a liquid crystal display device (LCD), and more particularly, to an array substrate for an LCD including a coplanar type thin film transistor (TFT) and a method of manufacturing the same.
  • 2. Discussion of the Related Art
  • With the advancement of information society, demand for display device in various forms has increased. Recently, various flat panel display devices, such as a liquid crystal display device (LCD), a plasma display panel (PDP), and an organic light emitting diode display (OLED), have been used.
  • Among these flat panel display devices, the LCD has advantages of low power consumption due to low driving voltage and portability, and thus is widely used in various fields, such as laptop computer, monitor, spacecraft, and airplane.
  • Particularly, an active matrix LCD device, in which a thin film transistor (TFT) as a switching element is formed in each of pixels arranged in a matrix, has been commonly used.
  • The TFT are categorized into various types according to positions of a gate electrode, for example, a staggered type, an inverted staggered type, and a coplanar type.
  • The coplanar type TFT has excellent element property because an active layer thereof is not damaged when etching source and drain electrodes.
  • The coplanar type TFT has a structure that a gate electrode, and the source and drain electrodes are located over the active layer.
  • FIG. 1 is a cross-sectional view illustrating the coplanar type TFT according to the related art.
  • Referring to FIG. 1, a buffer layer 11 is formed on a substrate 10. An active layer 24 is formed on the buffer layer 11 and includes a channel region 24 a and source and drain regions 24 b and 24 c at both sides, and a first insulating layer 15 a is formed on the active layer 24.
  • A gate electrode 21 is formed on the first insulating layer 15 a, and a second insulating layer 15 b is formed on the gate electrode 21 and includes contact holes exposing the source and drain regions 24 b and 24 c. Source and drain electrodes 22 and 23 are formed on the second insulating layer 15 b and contact the source and drain regions 24 b and 24 c, respectively.
  • The active layer 24, the gate electrode 21, and the source and drain electrodes 22 and 23 as described above form a coplanar type TFT.
  • A third insulating layer 15 c is formed on the source and drain electrodes 22 and 23 and includes a contact hole exposing the drain electrode 23. A pixel electrode 18 is formed on the third insulating layer 15 c and contacts the drain electrode 23.
  • The active layer 24 is made of a ZnO based semiconductor material, thus has a high mobility and meets a constant current test condition, and thus is applicable to a large-sized display.
  • ZnO is a material that can have a conductor property, a semiconductor property, or a nonconductor property according to a content of oxygen. Accordingly, the active layer using ZnO is applicable to a large-sized display, for example, LCD or OLED.
  • However, the second insulating layer 15 b is formed to prevent the active layer 24 of the ZnO based material from being exposed, and thus a number of mask processes increases.
  • Thus, steps of production processes increase, thus production cost increases, and productivity decreases.
    • SUMMARY OF THE INVENTION
  • Accordingly, the present invention is directed to an array substrate for a liquid crystal display device (LCD) and method of manufacturing the same that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
  • An advantage of the present invention is to provide an array substrate for a liquid crystal display device (LCD) and method of manufacturing the same that can decrease steps of production processes and improve productivity.
  • Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. These and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
  • To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described herein, an array substrate for a liquid crystal display device may include a substrate; a semiconductor layer on the substrate; a gate electrode on the semiconductor layer; source and drain electrodes on and in contact with the semiconductor layer; and an oxide layer on the gate electrode, the oxide layer including a plurality of metal atoms, wherein each of the source and drain electrodes includes a pattern of metal substantially made of the plurality of metal atoms.
  • In another aspect, a method of an array substrate for a liquid crystal display device may include forming semiconductor layer on a substrate; forming a gate electrode on the semiconductor layer; forming a first metal layer and a second metal layer sequentially on the gate electrode; patterning the first metal layer and the second metal layer to form a first metal pattern and a second metal pattern, respectively; etching the second metal pattern to expose a portion of the first metal pattern and form a first source pattern and a first drain pattern; and oxidizing the exposed portion of the first metal pattern to form an oxide layer, a second source pattern and a second drain pattern, wherein the first and second source patterns form a source electrode, and the first and second drain patterns form a drain electrode.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. In the drawings:
  • FIG. 1 is a cross-sectional view illustrating the coplanar type TFT according to the related art;
  • FIG. 2 is a cross-sectional view illustrating an array substrate for an LCD according to an embodiment of the present invention; and
  • FIGS. 3A to 3H are cross-sectional views illustrating a method for manufacturing an array substrate of an LCD according to an embodiment of the present invention.
    •  DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS
  • Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. The same reference numbers may be used throughout the drawings to refer to the same or like parts.
  • A thin film transistor (TFT) of the present invention may be a polycrystalline type TFT, an amorphous type TFT, or oxide type TFT. For the purpose of explanations, the oxide TFT is described in the embodiment below by way of example.
  • FIG. 2 is a cross-sectional view illustrating an array substrate for a liquid crystal display device (LCD) according to an embodiment of the present invention.
  • Referring to FIG. 2, in the array substrate for the LCD, a buffer layer 111 is formed on a substrate 110. Alternatively, the buffer layer 111 may be eliminated.
  • An active layer 124 as a semiconductor layer is formed on the buffer layer 111 and includes a channel region 124 a and source and drain regions 124 b and 124 c at both sides, and a first insulating layer 115 a is formed on the channel region 124 a and covers a part of the channel region 124 a.
  • A gate electrode 121 is formed on the first insulating layer 115 a. An oxide layer 126 covers the gate electrode 121, substantially corresponding to the channel region 124 a.
  • Second source and drain patterns 122 b and 123 b cover and contact the source and drain regions 124 b and 124 c, respectively. First source and drain patterns 122 a and 123 a are formed on and substantially have the same pattern as the second source and drain patterns 122 b and 123 b, respectively. The first and second source patterns 122 a and 122 b form a source electrode 122, and the first and second drain patterns 123 a and 123 b form a drain electrode 123.
  • The active layer 124, the gate electrode 121, and the source and drain electrodes 122 and 123 as described above form a coplanar type TFT.
  • A second insulating layer 115 b is formed entirely on the second substrate 110 having the source and drain electrodes 122 and 123, and includes a contact hole exposing a part of the drain electrode 123. A pixel electrode 118 is formed on the second insulating layer 115 b and contacts the drain electrode 123 via the contact hole of the second insulating layer 115 b.
  • The active layer 124 is formed of a ZnO based semiconductor material, for example, IGZO. ZnO is a material that can have a conductor property, a semiconductor property, or a nonconductor property according to a content of oxygen. Accordingly, the active layer 124 using ZnO is applicable to a large-sized display, for example, LCD or OLED.
  • In the embodiment, by adjusting a concentration of oxygen in a reaction gas during the sputtering process, a concentration of carrier in the active layer 124 can be adjusted, and thus properties of the TFT can be adjusted.
  • Since the active layer 124 is made of the ZnO based semiconductor material, it has a high mobility and meets a constant current test condition, and thus is applicable to a large-sized display.
  • The active layer 124 is covered by the source and drain electrodes 122 and 123 and the oxide layer 126.
  • The oxide layer 126 is formed by oxidizing a material that is used to form the second source and drain patterns 122 b and 123 b and is located at a region corresponding to the channel region 124 a. Accordingly, the oxide layer 126 covers the channel region 124 a, and the source and drain electrodes 122 and 123 cover the source and drain regions 124 b and 124 c, respectively. Accordingly, the second insulating layer (15 b of FIG. 1) of the related art is eliminated. Thus, a number of mask processes can be reduced, and production cost can be reduced and productivity can be improved.
  • The oxide layer 126 contacts the second source and drain patterns 122 b and 123 b at both sides.
  • The oxide layer 126 may extend such that it covers a part of the source and drain regions 124 b and 124 c.
  • FIGS. 3A to 3H are cross-sectional views illustrating a method for manufacturing an array substrate of an LCD according to an embodiment of the present invention.
  • Referring to FIG. 3A, the ZnO based semiconductor material is deposited on the buffer layer 111 to form the active layer 124, and then the first insulating layer 115 a and the gate electrode 121 are sequentially formed on the active layer 124.
  • In more detail, the ZnO bsed semicondutor material is patterned in a first mask process to form the active layer 124.
  • The ZnO bsed semicodncutor material may be formed , for example, using a complex target of Ga2O3, In2O3 and ZnO in a sputtering method, and alternatively, in a CVD (chemical vapor deposition) method, or ALD (atomic layer deposition) method.
  • The first insulating layer 115 a may be formed of an inorganic insulating material, for example, SiNx or SiO2, or a high dielectric constant oxide material, for example, hafnium oxide or aluminum oxide.
  • The first insulating material 115 a may be formed in a CVD method, or PECVD (plasma enhanced CVD) method.
  • The gate electrode 121 may be formed of a conductive material having a low resistance and being opaque, for example, Al, Al alloy, W, Cu, Ni, Cr, Mo, Ti, Pt or Ta, or a transparent conductive material, for example, ITO or IZO. Alternatively, the gate electrode 121 may have a multiple-layered structure using at least two of the above materials.
  • The first gate insulating material and the gate electrode material are deposited entirely on the substrate 110 and patterned in a second mask process to form the first insulating layer 115 a and the gate electrode 121.
  • The first insulating layer 115 a and the gate electrode 121 may be formed using a dry etching process.
  • Then, referring to FIG. 3B, a first metal layer 113 and a second metal layer 114 are sequentially formed on the substrate 110 having the gate electrode 121.
  • The first metal layer 113 may be formed of a metal having a low contact resistance for a conductor to meet a high mobility and a constant current test condition, for example, Al, Al alloy, Cu, Ni, Cr, Ti, Pt, Ta, Ti alloy, Mo or Mo alloy. For example, the first metal layer 113 may have a contact resistance less than the second metal layer 114 in connection with the source and drain regions 124 b and 124 c.
  • Because the second metal layer 114 may not be in direct contact with the source and drain regions 124 b and 124 c, a contact resistance of the second metal layer 114 may not be considered. Accordingly, the second metal layer 114 may be formed of a metal having a specific resistance less than the first metal layer 113, for example, Cu, Au or Mo.
  • The first metal layer 113 may have a thickness of about 200 angstroms or less to meet a high mobility and a constant current test condition, and preferably has about 100 angstroms to about 200 angstroms.
  • A photoresist layer 128 is formed entirely on the substrate 110 having the first and second metal layers 113 and 114.
  • Then, referring to FIG. 3C, in a third mask process, exposing the photoresist layer 128 selectively to light is conducted.
  • The light exposure may be conducted using a single photo mask or a halftone mask 130. In the embodiment, the halftone mask 130 is preferably used to reduce a number of mask processes.
  • The halftone mask 130 includes a transmissive portion I transmitting, a semi-transmissive portion II, and a blocking portion III.
  • Referring to FIG. 3D, after the light exposure using the halftone mask 130, a developing process of the photoresist layer 128 is conducted. Accordingly, a portion of the photoresist layer 128 corresponding to the transmissive portion I is removed, a portion of the photoresist layer 128 corresponding to the semi-transmissive portion II is partially removed to become a first photoresist pattern 128 a, and a portion of the photoresist layer 128 corresponding to the blocking portion III remains and becomes a second photoresist pattern 128 b that is thicker than the first photoresist pattern 128 a. The second photoresist pattern 128 b is located at each of both sides of the first photoresist pattern 128 a. In other words, the second photo resist patterns 128 b are located corresponding to the source and drain regions 124 b and 124 c.
  • The first and second metal layers 113 and 114 are patterned using the first and second photoresist patterns 128 a and 128 b.
  • In other words, referring to FIG. 3E, the first and second metal layers 113 and 114 are etched using the first and second photoresist patterns 128 a and 128 b to form the first and second metal patterns 113 a and 114 a. This etching process may be a wet etching process. The first and second metal patterns 113 a and 114 a are formed continuously over the active layer 124.
  • Then, an ashing process is conducted to remove the first photoresist pattern 128 a and partially remove the second photoresist patterns 128 b by a thickness of the first photoresist pattern 128 a. The ashed second photoresist patterns 128 b corresponding to the source and drain regions 124 b and 124 c become third and fourth photoresist patterns 128 c and 128 d.
  • Then, referring to FIG. 3F, the second metal pattern 114 a is etched using the third and fourth photoresist patterns 128 c and 128 d. This etching process may be a dry etching process. Accordingly, the first source and drain patterns 122 a and 123 a spaced apart from each other are formed.
  • Then, a portion of the first metal pattern 113 a exposed between the third and fourth photoresist patterns 128 c and 128 d is oxidized. For example, an oxygen plasma treatment or a thermal treatment under oxygen atmosphere for a predetermined time is conducted to oxidize the exposed portion of the first metal pattern 113 a. Accordingly, the exposed portion of the first metal pattern 113 a becomes the oxide layer 126.
  • The oxide layer 126 may be made of at least one of AlxOx, AlxOx alloy, CuxOx, NixOx, CrxOx, TixOx, PtxOx, TaxOx, TixOx alloy, MoxOx and MoxOx alloy.
  • The oxide layer 126 is a nonconductor and functions as an insulator. Accordingly, the first metal pattern 113 a is modified into the second source and drain patterns 122 b and 123 b and the oxide layer 126 between the second source and drain patterns 122 b and 123 b.
  • After forming the oxide layer 126, the third and fourth photoresist patterns 128 c and 128 d are stripped using an ashing process.
  • Accordingly, the source electrode 122 including the first and second source patterns 122 a and 122 b, and the drain electrode 123 including the first and second drain patterns 123 a and 123 b are formed.
  • Then, referring to FIG. 3G, the second insulating layer 115 b is formed entirely on the substrate 110 having the source and drain electrodes 122 and 123. Then, the second insulating layer 115 b is patterned in a fourth mask process to form a contact hole exposing a part of the drain electrode 123.
  • Then, referring to FIG. 3H, a third conductive layer is formed entirely on the second insulating layer 115 b and is patterned in a fifth mask process to form a pixel electrode 118 contacting the drain electrode 123 through the contact hole of the second insulating layer 115 b.
  • Through the above-described processes, an array substrate of an LCD according to an embodiment is manufactured.
  • In the array substrate, the active layer 124 is made of the ZnO based material, and thus the TFT has a high mobility and meets a constant current test condition. The LCD is applicable to a large-sized display.
  • Further, during the manufacturing process, the first metal pattern 113 a is used to form the source and drain electrodes 122 and 123 and cover the active layer 124, and a portion of the first metal pattern 113 a corresponding to the channel region 124 a is oxidized and covers the channel region 124 a. Accordingly, the second insulating layer (15 b of FIG. 1) according to the related art is eliminated, and thus a number of mask processes can be reduced, thereby reducing production cost and improving productivity.
  • It will be apparent to those skilled in the art that various modifications and variation can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.

Claims (19)

What is claimed is:
1. An array substrate for a liquid crystal display device, comprising:
a substrate;
a semiconductor layer on the substrate;
a gate electrode on the semiconductor layer;
source and drain electrodes on and in contact with the semiconductor layer; and
an oxide layer on the gate electrode, the oxide layer including a plurality of metal atoms,
wherein each of the source and drain electrodes includes a pattern of metal substantially made of the plurality of metal atoms.
2. The array substrate of claim 1, wherein the source electrode includes a first source pattern and a second source pattern below the first source pattern, and the drain electrode includes a first drain pattern and a second drain pattern below the first drain pattern, and
wherein the oxide layer is located at the same layer as the second source and drain patterns.
3. The array substrate of claim 2, wherein the first source and drain patterns has a specific resistance less than the second source and drain patterns, and has a contact resistance for a conductor greater than the second source and drain patterns.
4. The array substrate of claim 2, wherein the first source and drain patterns are made of one of Cu, Au and Mo, and the second source and drain patterns are made of one of Al, Al alloy, Cu, Ni, Cr, Ti, Pt, Ta, Ti alloy, Mo and Mo alloy.
5. The array substrate of claim 1, wherein the oxide layer is made of one of AlxOx, AlxOx alloy, CuxOx, NixOx, CrxOx, TixOx, PtxOx, TaxOx, TixOx alloy, MoxOx and MoxOx alloy.
6. The array substrate of claim 1, wherein the semiconductor layer includes a channel region and source and drain regions at both sides, and wherein a first insulating layer is on the channel region.
7. The array substrate of claim 6, wherein the gate electrode is on the first insulating layer.
8. The array substrate of claim 1, further comprising:
a second insulating layer that is on the source and drain electrodes and includes a contact hole exposing the drain electrode; and
a pixel electrode that is on the second insulating layer and contacts the drain electrode through the contact hole.
9. A method of an array substrate for a liquid crystal display device, comprising:
forming semiconductor layer on a substrate;
forming a gate electrode on the semiconductor layer;
forming a first metal layer and a second metal layer sequentially on the gate electrode;
patterning the first metal layer and the second metal layer to form a first metal pattern and a second metal pattern, respectively;
etching the second metal pattern to expose a portion of the first metal pattern and form a first source pattern and a first drain pattern; and
oxidizing the exposed portion of the first metal pattern to form an oxide layer, a second source pattern and a second drain pattern,
wherein the first and second source patterns form a source electrode, and the first and second drain patterns form a drain electrode.
10. The method of claim 9, wherein forming the first and second metal patterns includes:
forming first and second photoresist patterns on the second metal layer; and
patterning the first and second metal layers using the first and second photoresist patterns to form the first and second metal patterns.
11. The method of claim 10, wherein the first and second photoresist patterns are formed using a halftone mask.
12. The method of claim 10, wherein forming the second source and drain patterns includes:
removing the first photoresist pattern and partially removing the second photoresist patterns through an ashing process, thereby forming third and fourth photoresist patterns; and
etching the second metal pattern using the third and fourth photoresist patterns to expose the portion of the first metal pattern and form the second source and drain patterns.
13. The method of claim 9, wherein the second metal layer has a specific resistance less than the first metal layer, and has a contact resistance for a conductor greater than the first metal layer.
14. The method of claim 9, wherein the first metal layer is made of one of Al, Al alloy, Cu, Ni, Cr, Ti, Pt, Ta, Ti alloy, Mo and Mo alloy, and the second metal layer is made of one of Cu, Au and Mo.
15. The method of claim 9, wherein oxidizing the exposed portion of the first metal pattern to form an oxide layer is conducted using an oxygen plasma treatment or a thermal treatment under oxygen atmosphere for the exposed portion of the first metal pattern.
16. The method of claim 9, wherein the semiconductor layer includes a channel region and source and drain regions at both sides.
17. The method of claim 16, further comprising forming a first insulating layer on the channel region.
18. The method of claim 17, wherein the gate electrode is on the first insulating layer.
19. The method of claim 9, further comprising:
forming a second insulating layer on the source and drain electrodes;
forming a contact hole in the second insulating layer, the contact hole exposing the drain electrode; and
forming a pixel electrode that is on the second insulating layer and contacts the drain electrode through the contact hole.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160284741A1 (en) * 2014-11-06 2016-09-29 Boe Technology Group Co., Ltd. Array substrate fabricating method
US20180286888A1 (en) * 2017-03-29 2018-10-04 Japan Display Inc. Display device
US10263092B2 (en) * 2017-06-30 2019-04-16 Boe Technology Group Co., Ltd. Thin film transistor, method for manufacturing the same, array substrate and display device
US11081501B2 (en) * 2018-09-17 2021-08-03 Hefei Xinsheng Optoelectronics Technology Co., Ltd. Thin film transistor and method of fabricating the same, array substrate and method of fabricating the same, display device
CN113327935A (en) * 2021-05-21 2021-08-31 Tcl华星光电技术有限公司 Display panel and preparation method thereof

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102188690B1 (en) * 2014-01-20 2020-12-09 삼성디스플레이 주식회사 Thin film transistor, method of manufacturing the thin film transistor and flat panel display device havint the thin film transistor
CN108288650B (en) * 2017-01-10 2021-04-23 昆山国显光电有限公司 Oxide thin film transistor and method for manufacturing the same
CN108615735B (en) 2018-05-03 2021-01-22 京东方科技集团股份有限公司 Array substrate, display device and manufacturing method of array substrate

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294799B1 (en) * 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US20060226425A1 (en) * 2005-04-07 2006-10-12 Lg Philips Lcd Co., Ltd. Thin film transistor and method of fabricating the same
US20090244424A1 (en) * 2008-03-25 2009-10-01 Kim Jang-Il Liquid crystal display, thin film transistor substrate and method thereof
US20100276688A1 (en) * 2007-12-25 2010-11-04 Idemitsu Kosan Co., Ltd. Oxide semiconductor field effect transistor and method for manufacturing the same
US20130037807A1 (en) * 2010-03-11 2013-02-14 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing the same
US20130207104A1 (en) * 2012-02-14 2013-08-15 Innolux Corporation Manufacturing method of thin film transistor and display device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3161701B2 (en) 1991-05-11 2001-04-25 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal electro-optical device
JP4790896B2 (en) * 2000-05-26 2011-10-12 エーユー オプトロニクス コーポレイション Manufacturing method and manufacturing apparatus of active matrix device including top gate type TFT
KR101229413B1 (en) * 2006-04-18 2013-02-04 엘지디스플레이 주식회사 An array substrate for In-Plane switching mode LCD and method of fabricating of the same
CN100590818C (en) * 2007-09-10 2010-02-17 中华映管股份有限公司 Thin film transistor and fabrication method thereof
KR101213708B1 (en) * 2009-06-03 2012-12-18 엘지디스플레이 주식회사 Array substrate and method of fabricating the same
JP5708910B2 (en) * 2010-03-30 2015-04-30 ソニー株式会社 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
TWI474409B (en) * 2012-02-14 2015-02-21 Innocom Tech Shenzhen Co Ltd Thin film transistor and manufacturing method thereof and display

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294799B1 (en) * 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US20060226425A1 (en) * 2005-04-07 2006-10-12 Lg Philips Lcd Co., Ltd. Thin film transistor and method of fabricating the same
US20100276688A1 (en) * 2007-12-25 2010-11-04 Idemitsu Kosan Co., Ltd. Oxide semiconductor field effect transistor and method for manufacturing the same
US20090244424A1 (en) * 2008-03-25 2009-10-01 Kim Jang-Il Liquid crystal display, thin film transistor substrate and method thereof
US20130037807A1 (en) * 2010-03-11 2013-02-14 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing the same
US20130207104A1 (en) * 2012-02-14 2013-08-15 Innolux Corporation Manufacturing method of thin film transistor and display device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160284741A1 (en) * 2014-11-06 2016-09-29 Boe Technology Group Co., Ltd. Array substrate fabricating method
US9741751B2 (en) * 2014-11-06 2017-08-22 Boe Technology Group Co., Ltd. Array substrate fabricating method
US20180286888A1 (en) * 2017-03-29 2018-10-04 Japan Display Inc. Display device
US10453965B2 (en) * 2017-03-29 2019-10-22 Japan Display Inc. Display device
US11177363B2 (en) 2017-03-29 2021-11-16 Japan Display Inc. Display device
US10263092B2 (en) * 2017-06-30 2019-04-16 Boe Technology Group Co., Ltd. Thin film transistor, method for manufacturing the same, array substrate and display device
US11081501B2 (en) * 2018-09-17 2021-08-03 Hefei Xinsheng Optoelectronics Technology Co., Ltd. Thin film transistor and method of fabricating the same, array substrate and method of fabricating the same, display device
CN113327935A (en) * 2021-05-21 2021-08-31 Tcl华星光电技术有限公司 Display panel and preparation method thereof
CN113327935B (en) * 2021-05-21 2022-07-12 Tcl华星光电技术有限公司 Display panel and preparation method thereof

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