JP3161701B2 - Method for manufacturing liquid crystal electro-optical device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor, and more particularly, to a thin film transistor which can be applied to a liquid crystal electro-optical device, a perfect contact type image sensor device and the like.

[0002]

2. Description of the Related Art Conventionally known insulated gate field effect semiconductor devices are widely used in various fields. This semiconductor device is formed on a silicon substrate, and is used as an IC or LSI by functionally integrating a large number of semiconductor elements.

On the other hand, a thin-film insulated-gate field-effect semiconductor device (hereinafter referred to as a TFT) formed by laminating a thin film on a non-silicon substrate such as on an insulating substrate is similar to a similar insulated-gate field-effect semiconductor device. It has begun to be actively used for a switching element portion of a pixel of an optical device, a driving circuit portion, a reading circuit portion of a contact image sensor, and the like.

Since this TFT is formed by laminating a thin film on an insulating substrate by a vapor phase method as described above, it can be formed at a temperature as low as 500 ° C. at the highest, and can be made of inexpensive soda glass or borosilicate. Acid glass or the like can be used as the substrate.

As described above, a transistor can be formed on an inexpensive substrate, and the maximum dimension to be formed is limited only to the size of an apparatus for forming a thin film by a vapor phase method. It has the advantage of being able to be formed, and is therefore expected to be used for a liquid crystal electro-optical device having a matrix structure having a large number of pixels or a one-dimensional or two-dimensional image sensor, and has been partially realized.

FIG. 2 schematically shows a typical structure of this conventional TFT. In FIG. 2, 1 is an insulating substrate made of glass, 2 is a thin film semiconductor made of an amorphous semiconductor,
3 is a source and drain region, 7 is a source and drain electrode, and 11 is a gate electrode.

In general, such a TFT is formed by first forming a semiconductor film on a substrate and patterning the semiconductor region 2 in an island shape at a required portion using a first mask. Next, the gate insulating film 6 is formed, a gate electrode material is formed thereon, and the gate electrode 11 and the gate insulating film 6 are patterned using a second mask.

Thereafter, source and drain regions 3 are formed in the semiconductor region 2 in a self-aligned manner using the photoresist mask formed by the third mask and the gate electrode 11 as masks. Thereafter, an interlayer insulating film 4 is formed. A contact hole is formed in this interlayer insulating film for connecting electrodes to the source and drain regions 3 using a fourth mask. After the formation of the electrode material, the electrode material is patterned by the fifth mask to form the electrode 7, thereby completing the TFT.

[0009]

As described above, a general TFT uses five masks, and a complementary TFT requires six masks. Naturally, in the case of a complicated integrated circuit, more masks than this number are required. The use of such a large number of masks requires complicated steps in the process of manufacturing a TFT element, and naturally increases the number of times of mask alignment. They are,
This causes a decrease in the yield and productivity of TFT element production. Furthermore, an increase in the size of an electronic device using a TFT element, a reduction in the size of the TFT element itself, and a miniaturization of a pattern have been factors that further reduce these. TFT for that
In the fabrication process, a process that does not require complicated steps, a novel T that reduces the number of masks required for TFT fabrication
An FT structure was desired.

Therefore, the present invention relates to a novel structure and a simple manufacturing process of an insulated gate field effect semiconductor device.
T can be manufactured.

[0011]

An anodized film of a material constituting the gate electrode is provided around the gate electrode of the TFT of the present invention, and the electrodes connected to the source and drain regions are formed on the upper surfaces of the source and drain regions. The electrode connected to the source and the drain extends to above the oxide film provided around the gate electrode.

That is, as shown in the schematic sectional view of the TFT of the present invention shown in FIG. 1, an anodic oxide film 10 is provided at least around the gate electrode 8, and a source and a drain are formed from the end face of the anodic oxide film. The upper surface and the side surface of the region 3 slightly protrude, and the protruding portion connects the electrode 7 to the source and drain regions, thereby increasing the connection area. Further, the electrode 7 extends above the anodic oxide film 10, and is patterned at this portion to be separated into individual electrodes.

The steps of fabricating the TFT having the structure as shown in FIG. 1 are schematically shown in FIGS. In the drawings described in this specification, dimensions are merely different from actual dimensions and shapes because they are merely schematic for explanation. Hereinafter, an example of a manufacturing process of the TFT of the present invention will be described with reference to FIGS.

First, as shown in FIG. 3A, a semiconductor layer 2 is formed on a glass substrate, for example, a crystallized glass 1 having heat resistance. As the silicon semiconductor layer, a wide variety of semiconductors such as an amorphous semiconductor and a polycrystalline semiconductor can be used. Further, as a forming method, a plasma CVD method, a sputtering method, a thermal CV
Method D or the like can be selected. Here, the following steps will be described using a polycrystalline silicon semiconductor as an example.

Next, a silicon oxide film 6 serving as a gate insulating film is formed on the semiconductor layer 2. Further, on this, aluminum is formed as an electrode material to be a gate electrode, here as an electrode material. Thereafter, the gate electrode 8 is patterned using the first mask. Thereafter, the periphery of the gate electrode 8 is anodized in an electrolytic solution for anodic oxidation, and nonporous aluminum oxide 10 is placed at least around the gate electrode near the channel region as shown in FIG.
It is formed as follows.

As the solution used for the anodic oxidation, a strong acid solution such as sulfuric acid, nitric acid or phosphoric acid, or a mixed acid obtained by mixing tartaric acid or citric acid with ethylene glycol or propylene glycol can be used. Also, if necessary,
In order to adjust the pH of this solution, a salt or an alkaline solution can be mixed.

First, 9% of a 3% aqueous solution of tartaric acid is added.
The substrate was immersed in an AGW electrolytic solution to which propylene glycol was added at a ratio of 1. The aluminum gate electrode was connected to the anode of a power supply, and DC power was applied using platinum as the cathode.

The conditions of the anodic oxidation are as follows. First, a current is applied at a current density of 3 mA / cm ² for 20 minutes in a constant current mode, and then a treatment is performed for 5 minutes in a constant voltage mode. Formed. When the insulating property of this aluminum oxide was examined using a sample manufactured under the same conditions as the oxidation treatment, an aluminum oxide film having a specific resistance of 10 ¹⁵ Ω and a withstand voltage of 3 × 10 ⁶ V / cm was obtained. Met.

When the surface of this sample was observed with a scanning electron microscope, it was possible to observe irregularities on the surface at a magnification of about 10,000 times, but no fine holes were observed.
It was a good insulating film.

Next, after a silicon oxide film 12 is formed on the upper surface by a plasma CVD method, anisotropic etching is performed on the substrate in a direction substantially perpendicular to the substrate from this state, as shown in FIG.
As shown in (D), the silicon oxide 13 is left at the side wall position of the convex portion composed of the gate electrode and the anodic oxide film. Next, using the remaining silicon oxide 13 and the gate electrode 8 and the anodic oxide film 10 of the convex portion as a mask, the semiconductor layer 2 thereunder is etched and removed by self-alignment. The state at this time is shown in FIG. FIG. 5A shows the state of the upper surface at this time.
Shown in FIG. 4 shows a cross section taken along the line AA ′ in FIG.

Next, from this state, the silicon oxide film 13 and the gate insulating film are selectively etched away using only the gate electrode 8 and the anodic oxide film 10 as a mask, and only the silicon oxide is removed, as shown in FIGS. 4B and 5B. 2), a part of the semiconductor layer 2 is exposed from the end of the gate electrode.

Next, the exposed portions are doped with impurities so as to become source and drain regions. As shown in FIG. 4B, the gate anodic oxide film 10
Is used as a mask, and phosphorus ions are ion-implanted from the upper surface of the substrate. Thus, the source and drain regions 3 are formed. Thereafter, a laser is irradiated to this portion for activation of the region, and the source and drain regions are activated by laser annealing. As the activation process, a thermal annealing process or the like can be employed.

Next, aluminum serving as source and drain electrodes is formed on the upper surface, and the source and drain electrodes are etched in a predetermined pattern using a second mask to divide the source and drain electrodes. . This state is shown in FIG. Finally, using the source and drain electrodes 7 and the anodic oxide film 10 of the gate electrode as a mask, the semiconductor layer 2 protruding from the periphery is removed by etching to obtain a TFT as shown in FIGS. 4C and 6B. To complete.

As described above, according to the present invention, a TFT can be manufactured using only two masks.

When the TFT has a complementary structure, it can be achieved by adding one or two more masks.

An external connection to the gate electrode may be made by forming an anodic oxide film so that a part of the gate electrode is not brought into contact with the anodizing electrolytic solution during the anodic oxidation treatment, or by forming the last unnecessary semiconductor. After the layer is etched, the connection can be made by removing the anodic oxide film exposed outside by selective etching of the source and drain electrodes and the anodic oxide film. Of course, it is also possible to connect a specific anodic oxide film by making a contact hole by using a third mask.

In the above description, the manufacturing process of the TFT described above is an example, and the present invention is not limited to the manufacturing process shown in this description. For example, the impurity doping process of the source and drain regions may be performed as described above. In the description, as shown in FIG. 4B, the patterning is performed after the patterning of the semiconductor layer 2. However, in the state of FIG. 3B, the ion implantation can be performed using the gate anodic oxide film 10 as a mask. .

In a step after the formation of the semiconductor layer 2 and before the formation of the gate electrode, a new photomask is used to
When the semiconductor layer is patterned in an island shape only in the vicinity of the TFT region, as shown in FIG. 7, the semiconductor layer 2 does not exist under the lead wiring portion of the gate electrode, and only the substrate or the insulating film on the substrate exists. In this portion, the gate electrode wiring and the capacitor can be prevented from being formed. With this configuration, it is possible to make a TFT that can respond faster by using three masks. This situation is shown in FIG.
7A shows a top view thereof, and FIG. 7B shows a BB ′ cross section of the top view.

[0029]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 This embodiment shows an example in which the TFT of the present invention is applied to an active matrix type liquid crystal electro-optical device having a circuit configuration as shown in FIG. As is clear from FIG. 8, the active element of this embodiment has a complementary structure, and PTFT and NTFT are applied to one pixel electrode.
Are provided.

FIG. 11 shows an actual arrangement of electrodes and the like corresponding to this circuit configuration. For simplicity of description, only portions corresponding to 2 × 2 are described.

First, a method of manufacturing a substrate for a liquid crystal electro-optical device used in this embodiment will be described with reference to FIGS. In FIG. 9A, a non-expensive 7 such as quartz glass is used.
Using a magnetron RF (high frequency) sputtering method, a silicon oxide film as a blocking layer 51 is formed on a glass 50 capable of withstanding heat treatment at a temperature of 00 ° C. or less, for example, about 600 ° C.
It is made to a thickness of 3000 mm. Process condition is oxygen 1
00% atmosphere, film formation temperature 15 ° C, output 400 to 800
W, pressure 0.5 Pa. The film formation rate using quartz or single crystal silicon as a target was 30 to 100 ° / min.

On this, a silicon film 52 was formed by LPCVD (low pressure gas phase), sputtering or plasma CVD. When formed by the reduced pressure gas phase method, 450 to 550 ° C. lower by 100 to 200 ° C. than the crystallization temperature, for example, 53
At 0 ° C disilane (Si ₂ H ₆ ) or trisilane (Si ₃ H ₈ )
The film was supplied to a VD device to form a film. Reactor pressure is 30 ~ 3
00 Pa. The deposition rate was 50-250 ° / min. In order to control the threshold voltage (Vth) of the PTFT and NTFT substantially the same, boron may be added during the film formation at a concentration of 1 × 10 ¹⁵ to 1 × 10 ¹⁸ cm ⁻³ using diborane. .

When the sputtering method is used, the back pressure before the sputtering is set to 1 × 10 ⁻⁵ Pa or less, and single crystal silicon is used as a target in an atmosphere in which hydrogen is mixed with 20 to 80% of argon. For example, argon was 20% and hydrogen was 80%.
The film formation temperature was 150 ° C., the frequency was 13.56 MHz, the sputter output was 400 to 800 W, and the pressure was 0.5 Pa.

When a silicon film is formed by the plasma CVD method, the temperature is, for example, 300 ° C., and monosilane (SiH ₄ ) or disilane (Si ₂ H ₆ ) is used. These were introduced into a PCVD apparatus, and a high-frequency power of 13.56 MHz was applied to form a film.

The coatings formed by these methods are:
It is preferable that oxygen is 5 × 10 ²¹ cm ⁻³ or less. If the oxygen concentration is high, it is difficult to crystallize, and the heat annealing temperature must be increased or the heat annealing time must be increased.
If the amount is too small, the lamp is turned off by the backlight.
Current increases. Therefore, 4 × 10 ¹⁹ to 4 × 10 ²¹
The range was cm ⁻³ . Hydrogen is 4 × 10 ²⁰ cm ^-3 and silicon 4
It was 1 atomic% when compared with × 10 ²² cm ⁻³ . Also,
In order to promote crystallization of the source and the drain, the oxygen concentration is set to 7 × 10 ¹⁹ cm ⁻³ or less, preferably 1 × 10 ¹⁹ cm ^−3.
cm ⁻³ or less, and oxygen is ion-implanted only in a channel formation region of a TFT constituting a pixel to form 5 × 10 ^{20 to} 5 × 10
You may add so that it may be set to ²¹ cm- ³ . At this time, since light is not irradiated to the TFTs constituting the peripheral circuit, it is effective to reduce the mixing of oxygen and to have a higher carrier mobility for high-frequency operation.

After forming an amorphous silicon film to a thickness of 500 to 3000 °, for example, 1500 ° by the above method, heat treatment is performed at 450 to 700 ° C. for 12 to 70 hours in a non-oxide atmosphere at a medium temperature. For example, it was kept at a temperature of 600 ° C. in a hydrogen atmosphere. Since a silicon oxide film having an amorphous structure is formed on the surface of the substrate under the silicon film, no specific nucleus is present in this heat treatment, and the whole is annealed uniformly. That is, it has an amorphous structure at the time of film formation, and hydrogen is simply mixed therein.

Due to the annealing, the silicon film shifts from an amorphous structure to a highly ordered state, and a part of the carrier exhibits a crystalline state, and the mobility of carriers obtained is a hole mobility (μh) = 1.
0 to 200 cm ² / VSec, electron mobility (μe) = 15
３００300 cm ² / VSec are obtained.

In FIG. 9A, a silicon film is subjected to photoetching using a first photomask, and a PTFT region 30 (channel width 20 μm) is placed on the left side of the drawing in the NTFT.
Region 40 was formed on the right side.

On this, a silicon oxide film was formed as a gate insulating film 53 to a thickness of 500 to 2000 {for example, 700}. This was performed under the same conditions as those for forming the silicon oxide film 51 as the blocking layer. During this film formation, a small amount of fluorine is added,
Sodium ions may be immobilized. In this embodiment, a silicon nitride film 54 having a thickness of 50 to 200 (for example, 100) is formed on the silicon oxide film as a blocking layer having a function of suppressing the reaction between the gate electrode and the gate insulating film formed on the upper surface.

After this, aluminum is deposited on the upper side of this as a material for a gate electrode by a known sputtering method.
It was formed to a thickness of 00 to 1.5 μm, for example, 1 μm. As the gate electrode material, besides aluminum, molybdenum (Mo), tungsten (W), titanium (Ti), tantalum (Ta), an alloy in which silicon is mixed with these materials, a laminated wiring of silicon and a metal film, and the like are used. can do.

When a metal material is used as the gate electrode as in the present embodiment, particularly in the case of a low-resistance material such as aluminum, the gate delay (the voltage propagating through the gate wiring) generated due to the large area and high definition of the substrate. (Delay of the pulse and distortion of the waveform) can be suppressed, and the area of the substrate can be easily increased.

This was patterned using a second photomask to obtain FIG. 9B. Gate electrode 5 for PTFT
5. A gate electrode 56 for NTFT was formed. The gate electrodes are all connected to the same gate wiring 57.

Next, this substrate was prepared by adding AG in which propylene glycol was added at a ratio of 9 to 1% of a 3% aqueous solution of tartaric acid.
It was immersed in a W electrolytic solution, an aluminum gate electrode was connected to the anode of the power supply, and DC power was applied using platinum as the cathode. At this time, the gate electrode is connected for each gate wiring, but connection terminals are provided near the end of the substrate so that all the gate wirings are inserted and connected, and anodic oxidation is performed as shown in FIG. 9C. Anodized films 58 and 59 were formed around the gate electrode.

The conditions of the anodic oxidation are as follows. First, a current is applied at a current density of 4 mA / cm ² for 20 minutes in a constant current mode, and then a treatment is performed for 15 minutes in a constant voltage mode. Formed. This anodic oxide film is preferably formed as thick as possible, and is formed as thick as process conditions permit.

Next, after the nitride film 54 and the silicon oxide film 53 on the semiconductor are removed by etching as shown in FIG.
It was added by ion implantation at a dose of × 10 ¹⁵ cm ^-2 . The doping concentration is set to about 10 ¹⁹ cm ⁻³ to form the source 60 and the drain 61 of the PTFT. In this embodiment,
Although the ion doping was performed after removing the insulating film on the surface, the doping can be performed through the insulating films 53 and 54 on the semiconductor film if the conditions of ion implantation are changed.

Next, as shown in FIG.
Is formed using a third photomask, and after covering the PTFT region, phosphorus is ion-implanted into the source 62 drain 63 for the NTFT at a dose of 1 to 5 × 10 ¹⁵ cm ^−2. The doping concentration was ^adjusted so as to be about 10 ²⁰ cm ⁻³ . In the above ion doping process, the direction of ion implantation is oblique to the substrate,
The ends of the source and drain regions were made to substantially coincide with the ends of the gate electrode so that the impurities flowed in the direction below the anodic oxide film around the gate electrode. As a result, the anodic oxide film has a sufficient insulating effect on the electrode wiring formed in a later step, and it is not necessary to form a new insulating film.

Next, annealing was performed again at 600 ° C. for 10 to 50 hours to activate the impurity region. P
The source 60 and the drain 61 of the TFT and the source 62 and the drain 63 of the NTFT were formed as P ⁺ and N ⁺ by activating impurities. Channel formation regions 64 and 65 are formed below the gate electrodes 55 and 56. In this embodiment, annealing by heat is employed as the activation process. However, other than this method, a method of irradiating the source and drain regions with laser light to perform the activation process can also be employed. In this case, since the activation process is performed instantaneously, there is no need to consider the diffusion of the metal material used for the gate electrode, and the function for blocking on the gate insulating film employed in the present embodiment is employed. The silicon nitride film 54 can be omitted.

Next, an insulating film was formed as a silicon oxide film on the upper surface by the above-mentioned sputtering method. The thickness of this film is as large as possible, for example, 0.5 to 2.0 μm. In this embodiment, the film is formed to a thickness of 1.2 μm, and then anisotropically etched from the upper surface to form a gate electrode and an anodic oxide film. The remaining region 66 is formed near the side wall of the convex portion to be formed. This is shown in FIG.

Next, unnecessary portions of the semiconductor film 52 are removed by etching using the convex portions and the remaining regions 66 as a mask, and the remaining regions 66 around the convex portions are removed. A semiconductor film 52 serving as a source / drain region of each TFT was exposed outside. This state is shown in FIG.
Shown in

Further, aluminum is formed on the entire surface by sputtering, and leads 67, 68 and contact portions 69, 70 are patterned by a fourth mask, and then electrodes 67, 68, 69, 70 and a gate electrode are formed. The semiconductor films which are off the anodic oxide films 58 and 59 and the surrounding anodic oxide films 58 and 59 are removed by etching to complete the element isolation and complete the TFT. According to such a manufacturing method, a TFT having a complementary structure can be manufactured using four masks. This state is shown in FIG.

In this TFT, the periphery of the gate electrode is wrapped with an anodic oxide film, and the source and drain regions protrude only from the gate electrode portion to the electrode connection portion, but all other portions exist below the gate electrode. Also source,
The drain electrode has two top and side surfaces of the source and drain regions.
The contacts are in place and a sufficient ohmic connection is guaranteed.

In this way, a C / TFT can be manufactured without applying a temperature to 700 ° C. or more in all the steps even though the self-alignment method is used. Therefore, it is not necessary to use an expensive substrate such as quartz as a substrate material, and this is a process very suitable for the large-pixel liquid crystal electro-optical device of the present invention.

In this embodiment, the thermal annealing is performed as shown in FIG.
(E) was performed twice. However, the annealing in FIG. 9A may be omitted depending on the required characteristics, and both may be replaced by the annealing in FIG. 9E to shorten the manufacturing time. In this embodiment, aluminum is used as the gate electrode. However, since the silicon nitride film 54 is provided under the gate electrode, aluminum does not react with the underlying gate insulating film, thereby realizing good interface characteristics. Was completed.

Next, as shown in FIG.
In order to connect the output terminal of the liquid crystal device to an electrode of one pixel of the liquid crystal device as a transparent electrode, an ITO (indium tin oxide film) was formed by a sputtering method. It was etched with a fifth photomask to form the pixel electrode 71. This ITO is between room temperature and 1
Films were formed at 50 ° C. and achieved with oxygen at 200-400 ° C. or annealing in air. Like this, PTFT
30, NTFT 40 and transparent conductive electrode 71 were formed on the same glass substrate 50. The electrical characteristics of the obtained TFT are PTFT, the mobility is 20 (cm ² / Vs), and Vth is −
5.9 (V), NTFT mobility is 40 (cm ² / Vs),
Vth was 5.0 (V).

FIG. 11 shows the arrangement of the electrodes and the like of the liquid crystal electro-optical device. The cross section taken along the line CC ′ of FIG. 11 corresponds to the cross section of the manufacturing process of FIGS. The PTFT 30 is provided at the intersection of the first signal line 72 and the third signal line 57, and the PTFT for another pixel is also provided at the intersection of the first signal line 72 and the third signal line 76 on the right. Are similarly provided. On the other hand, NTFT has a second signal line 75 and a third signal line 5.
7 is provided at the intersection. Further, a PTFT for another pixel is provided at the intersection of the adjacent first signal line 74 and third signal line 57. Such C /
It has a matrix configuration using TFTs. PTFT
Reference numeral 30 denotes an electrode of a drain 61 connected to a first signal line 72, and gate 55 is connected to a signal line 57. Saw
The output terminal of the switch 60 is connected to the pixel electrode 71 via a contact.

On the other hand, the NTFT 40 is connected to the second signal line 73 by the electrode of the source 62, and the gate 56 is connected to the signal line 57.
The output terminal of the drain 63 is connected to the PTF through a contact.
Like T, it is connected to the pixel electrode 71. Also, another C connected to the same third signal line and provided next to it.
The PTFT 31 is connected to the first signal line 74 by the NTFT.
41 is connected to the second signal line 75. Thus, between the pair of signal lines 72 and 73 (inside), one pixel 80 was constituted by the pixel electrode 71 made of a transparent conductive film and the C / TFT. By repeating such a structure horizontally and vertically, a liquid crystal electro-optical device having a large pixel of 640 × 480 or 1280 × 960 obtained by enlarging a 2 × 2 matrix can be obtained. It is to be noted that the impurity regions of the TFT are referred to as a source and a drain here for the purpose of explanation, and may have a function different from that of the name when actually driven.

In this embodiment, the semiconductor film 52 is
Using a photomask of
Element isolation of each TFT is performed. As a result, there is no semiconductor film below the gate wiring other than the TFT area, and the substrate or the insulating film on the substrate is located below the gate wiring, and this portion forms the gate input side capacitance. Because there is no response, high-speed response is possible.

A liquid crystal electro-optical device is obtained by using the substrate provided with the active elements manufactured as described above. First, on the substrate, a resin having an ultraviolet curing property, in which 50% by weight of nematic liquid crystal was dispersed in an epoxy-modified acrylic resin, was formed by a screen method.

The screen used had a mesh density of 125 meshes per inch and an emulsion thickness of 15 μm.
And The squeegee pressure was 1.5 kg / cm ² .

Next, after 10 minutes of leveling, 236 nm
With a high-pressure mercury lamp having an emission wavelength centered on
2,000 mJ of energy to cure the resin, 12
A light control layer having a thickness of μm was formed.

After that, Mo sputtering is performed using a DC sputtering method.
(Molybdenum) was deposited at 2500 ° to form a second electrode.

Thereafter, a black epoxy resin is printed by a screen method, and after pre-baking at 50 ° C. for 30 minutes,
Main firing was performed at 180 ° C. for 30 minutes to form a 50 μm protective film.

A TAB-shaped drive IC was connected to the leads on the substrate, and a reflection type liquid crystal display device composed of only one substrate was completed.

In this embodiment, one set of complementary TFTs is provided for each pixel as an active element. However, the present invention is not particularly limited to this configuration. A plurality of sets of complementary TFs are provided.
T may be provided, and a plurality of complementary TFTs
May be provided for a plurality of divided pixel electrodes.

In this way, a liquid crystal electro-optical device in which active elements were provided in a dispersion type liquid crystal was completed. Since the dispersion type liquid crystal of this embodiment requires only one substrate, a light and thin liquid crystal electro-optical device can be realized at a low cost, without using a polarizing plate and without requiring an alignment film. Since the liquid crystal electro-optical effect can be realized with only the substrate, a very bright liquid crystal electro-optical device can be realized.

Embodiment 2 In this embodiment, as shown in FIG. 12, the present invention is applied to a liquid crystal electro-optical device in which a modified transfer gate TFT having a complementary structure is provided for one pixel. The fabrication of the TFT in this embodiment is basically the same as that in the first embodiment, and the process proceeds in substantially the same manner as in FIGS. However, in this embodiment, since the C / TFT of the modified transfer gate is adopted, the arrangement is different from that of FIG. 11, and the actual arrangement is such that the TFTs are arranged and connected at positions as shown in FIG.

As shown in FIG. 12, the common gate wiring 9
1 has a PTFT 95 and an NTFT 96 connected to a gate. These connect the source and drain regions and are connected to the other signal line 93. The other source and drain regions are also commonly connected to the pixel electrode. I have.

The process proceeds to the step of FIG. 10B in the same steps as in the first embodiment. Next, silicon nitride film 100 is formed on these upper surfaces to a thickness of 500 to 2000 °. Next, the silicon nitride film 100 is anisotropically etched in a direction perpendicular to the substrate,
This silicon nitride film is left on the side wall of the anodic oxide film 101 of the gate. At this time, the silicon nitride film 100 does not need to be left uniformly on the side wall, but only needs to be left at least in the gate insulating film portion where the gate electrode 107 and the semiconductor come close. When the gate insulating film 102 is formed, the metal wiring 102 and the source / drain regions 104 and 105 are prevented from being short-circuited near the end of the gate insulating film 103.

Next, an interlayer insulating film and a silicon oxide film 1
06 is formed at 1000 ° to 2 μm, here 6000 °. After a photoresist is formed on this upper surface, light is exposed from the substrate, a mask is formed on the gate electrode 107 using the gate electrode as a mask, and an etching process is performed to form an interlayer insulating film 106 on the gate electrode.

Thereafter, the steps shown in FIGS. 10C and 10D are advanced to complete a modified transfer gate TFT having the arrangement and structure shown in FIGS. 13A, 13B and 13C. . An interphase insulating film 106 is formed. FIG. 13 (B),
As is clear from FIG. 4C, the interlayer insulating film 106 always exists on the gate electrode 107, and the lead portion of the gate wiring 107 and the lead portion of the source / drain wiring 102 as shown in FIG. A sufficient interlayer insulating function was exerted at the intersection of, and the generation of wiring capacitance at this intersection could be suppressed.

As described above, in this embodiment, the first embodiment is used.
With the same number of masks, the capacitance near the wiring is less,
Less possibility of short circuit near gate insulating film,
An active element substrate having a TFT having an element structure was completed.

Using this substrate as a first substrate, an STN-type liquid crystal is injected between the substrates by a well-known technique using a second substrate having a counter electrode and an alignment treatment layer formed on the counter substrate. Thus, an active matrix type STN liquid crystal electro-optical device was completed. In each of the above examples, an example in which the present invention is applied to a liquid crystal electro-optical device is described. However, the present invention is not limited to this example, and it is needless to say that the present invention can be applied to other devices and three-dimensional integrated circuit elements.

[0073]

According to the structure of the present invention, it is possible to manufacture a TFT element using a very small number of masks as compared with the conventional case. When a semiconductor product is manufactured by applying an element having this structure, the number of masks can be reduced, thereby simplifying the manufacturing process and improving the manufacturing yield.
As a result, a semiconductor application device with a low manufacturing cost can be provided.

According to the present invention, a metal material is used as a gate electrode material, and an oxide film of this metal material is formed on the surface by anodic oxidation, and a three-dimensional wiring having a three-dimensional intersection is provided thereon. It is characterized by. In addition, by providing the gate electrode and the oxide film around the electrode so that only the source / drain contact portions are exposed from the gate electrode and the feeding point is brought close to the channel, the frequency characteristics of the device are reduced and the ON resistance is increased. Could be prevented.

Further, in the present invention, when aluminum is used for the gate electrode, the hydrogen in the gate oxide film can be further reduced from H _{2 to} H by the catalytic effect of aluminum when annealing is performed during the element forming step. As a result, the interface state density (Q _SS ) can be reduced as compared with the case where a silicon gate is used, and the device characteristics can be improved.

Further, since the source and drain regions of the TFT are self-aligned and the contact portions of the electrodes for supplying power to the source and drain regions are also self-aligned, the area of the element required for the TFT is reduced, and the integration degree is reduced. Can be improved. When used as an active element of a liquid crystal electro-optical device, the aperture ratio of the liquid crystal panel could be increased.

Further, a TFT having a characteristic structure is proposed by positively utilizing the anodic oxide film around the gate electrode, and the number of masks for manufacturing the TFT is reduced to a minimum of two and a very small number of masks. We were able to.

[Brief description of the drawings]

FIG. 1 shows an example of an element structure of a TFT of the present invention.

FIG. 2 shows an element structure of a conventional TFT.

FIG. 3 is a schematic sectional view of a manufacturing process of the TFT of the present invention.

FIG. 4 is a schematic sectional view of a manufacturing process of the TFT of the present invention.

FIG. 5 is a top view of a manufacturing process of the TFT of the present invention.

FIG. 6 is a top view of a manufacturing process of the TFT of the present invention.

FIG. 7 shows another example of the TFT of the present invention.

FIG. 8 is a schematic diagram of a circuit when applied to a liquid crystal electro-optical device as a complementary type of the TFT of the present invention.

FIG. 9 is a schematic cross-sectional view of a manufacturing process when the TFT of the present invention is applied to a liquid crystal electro-optical device as a complementary type.

FIG. 10 is a schematic diagram of a manufacturing process when a TFT of the present invention is applied to a liquid crystal electro-optical device as a complementary type.

FIG. 11 is a schematic view showing an arrangement on a substrate when a TFT of the present invention is applied to a liquid crystal electro-optical device as a complementary type.

FIG. 12 is a schematic diagram of a circuit when the TFT of the present invention is applied to a liquid crystal electro-optical device as a complementary type.

FIG. 13 is a schematic diagram showing an arrangement on a substrate when a TFT of the present invention is applied to a liquid crystal electro-optical device as a complementary type.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Semiconductor layer 3 Source and drain region 6 Gate insulating film 7 Source and drain electrode 8 Gate electrode 10 Anodized film 13 Residual region 55 Gate electrode 56 Gate electrode 60 Source 61 Drain 62 Source 63 Drain 66 Remaining region 71 Pixel electrode

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁷ , DB name) G02F 1/1368 H01L 21/336 H01L 29/786

Claims (3)

(57) [Claims] A semiconductor film is formed on a glass substrate; a silicon oxide film is formed in contact with the semiconductor film; a silicon nitride film is formed in contact with the silicon oxide film; contact to form the gate sites electrode and the gate wiring, the gate electrode and oxidizing the periphery of the gate line to form an oxide film around the gate electrode, the gate electrode and the semiconductor layer using the oxide film as a mask Adding an impurity to a part thereof to form a source region and a drain region; heating the semiconductor film to activate the impurity; forming an interlayer insulating film on the oxide film; a method for manufacturing a liquid crystal electro-optical device for forming an electrical connection with the signal line, the silicon nitride film is thinner than the silicon oxide film, the gate electrode and the gate wiring molybdenum, data
Gusten, titanium or tantalum metal source
Element, an alloy of the metal element and silicon, or silicon and
A method of manufacturing a liquid crystal electro-optical device , wherein the signal line is made of any one of a material laminated with a metal film, and the signal line intersects with the gate wiring via the oxide film and the interlayer insulating film. 2. A semiconductor film is formed on a glass substrate; a silicon oxide film to which fluorine is added is formed in contact with the semiconductor film; a silicon nitride film is formed in contact with the silicon oxide film; in contact with the silicon film to form a gate site electrode and gate wiring, the gate electrode and oxidizing the periphery of the gate lines an oxide film is formed around the gate electrode, the gate electrode and the oxide film as a mask Adding an impurity to a part of the semiconductor film to form a source region and a drain region; heating the semiconductor film to activate the impurity; forming an interlayer insulating film on the oxide film; a method for manufacturing a liquid crystal electro-optical device for forming a signal line electrically connected to said drain region, said silicon nitride film is thinner than the silicon oxide film, the gate electrode and the gate wiring Ribuden, Tan
Gusten, titanium or tantalum metal source
Element, an alloy of the metal element and silicon, or silicon and
A method of manufacturing a liquid crystal electro-optical device , wherein the signal line is made of any one of a material laminated with a metal film, and the signal line intersects with the gate wiring via the oxide film and the interlayer insulating film. 3. The silicon oxide film according to claim 1, wherein the thickness of the silicon oxide film is 500 to 2000 °.
The method for manufacturing a liquid crystal electro-optical device, wherein the thickness of the silicon nitride film is 50 to 200 °.