CN111211074B - 具有空间分布的气体通道的气流控制衬垫 - Google Patents

具有空间分布的气体通道的气流控制衬垫 Download PDF

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Publication number
CN111211074B
CN111211074B CN202010034452.7A CN202010034452A CN111211074B CN 111211074 B CN111211074 B CN 111211074B CN 202010034452 A CN202010034452 A CN 202010034452A CN 111211074 B CN111211074 B CN 111211074B
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annular body
gas
channels
liner assembly
substrate
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CN111211074A (zh
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穆罕默德·图格鲁利·萨米尔
刘树坤
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87265—Dividing into parallel flow paths with recombining

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
CN202010034452.7A 2013-04-30 2014-04-21 具有空间分布的气体通道的气流控制衬垫 Active CN111211074B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010034452.7A CN111211074B (zh) 2013-04-30 2014-04-21 具有空间分布的气体通道的气流控制衬垫

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US201361817691P 2013-04-30 2013-04-30
US61/817,691 2013-04-30
CN202010034452.7A CN111211074B (zh) 2013-04-30 2014-04-21 具有空间分布的气体通道的气流控制衬垫
PCT/US2014/034785 WO2014179093A1 (en) 2013-04-30 2014-04-21 Flow controlled liner having spatially distributed gas passages
CN201480024290.1A CN105164788B (zh) 2013-04-30 2014-04-21 具有空间分布的气体通道的气流控制衬垫

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CN201710953411.6A Active CN107833848B (zh) 2013-04-30 2014-04-21 具有空间分布的气体通道的气流控制衬垫

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US (3) US9553002B2 (enExample)
JP (1) JP6368773B2 (enExample)
KR (2) KR102291460B1 (enExample)
CN (3) CN105164788B (enExample)
TW (2) TWI679299B (enExample)
WO (1) WO2014179093A1 (enExample)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5837178B2 (ja) * 2011-03-22 2015-12-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 化学気相堆積チャンバ用のライナアセンブリ
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
US20140116336A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Substrate process chamber exhaust
KR102291460B1 (ko) 2013-04-30 2021-08-19 어플라이드 머티어리얼스, 인코포레이티드 공간적으로 분포된 가스 통로들을 갖는 유동 제어 라이너
US11414759B2 (en) * 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
US20150184292A1 (en) * 2013-12-30 2015-07-02 Lam Research Corporation Systems and methods for preventing mixing of two gas streams in a processing chamber
CN107431033B (zh) * 2015-03-20 2021-10-22 应用材料公司 用于3d共形处理的原子层处理腔室
US10203604B2 (en) 2015-11-30 2019-02-12 Applied Materials, Inc. Method and apparatus for post exposure processing of photoresist wafers
US11150140B2 (en) * 2016-02-02 2021-10-19 Kla Corporation Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
US10260149B2 (en) * 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
US10788764B2 (en) 2016-06-17 2020-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield
US11397385B2 (en) 2016-06-17 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and a method of forming a particle shield
US10168626B2 (en) * 2016-06-17 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield
US9958782B2 (en) * 2016-06-29 2018-05-01 Applied Materials, Inc. Apparatus for post exposure bake
USD838681S1 (en) 2017-04-28 2019-01-22 Applied Materials, Inc. Plasma chamber liner
USD837754S1 (en) 2017-04-28 2019-01-08 Applied Materials, Inc. Plasma chamber liner
USD875054S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD842259S1 (en) 2017-04-28 2019-03-05 Applied Materials, Inc. Plasma chamber liner
USD875055S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875053S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
KR20190137935A (ko) * 2017-05-01 2019-12-11 어플라이드 머티어리얼스, 인코포레이티드 진공 격리 및 사전-프로세싱 환경을 갖는 고압 어닐링 챔버
JP6837911B2 (ja) * 2017-05-17 2021-03-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US11004722B2 (en) * 2017-07-20 2021-05-11 Applied Materials, Inc. Lift pin assembly
KR102081704B1 (ko) * 2018-02-05 2020-02-27 세메스 주식회사 기판 처리 장치
CN214848503U (zh) * 2018-08-29 2021-11-23 应用材料公司 注入器设备、基板处理设备及在机器可读介质中实现的结构
JP2022515081A (ja) * 2018-12-20 2022-02-17 アプライド マテリアルズ インコーポレイテッド 処理チャンバの処理空間に改善されたガス流を供給するための方法および装置
US11486038B2 (en) 2019-01-30 2022-11-01 Applied Materials, Inc. Asymmetric injection for better wafer uniformity
US10995419B2 (en) * 2019-04-16 2021-05-04 Applied Materials, Inc. Methods and apparatus for gallium nitride deposition
CN113994023A (zh) * 2019-05-15 2022-01-28 应用材料公司 减少腔室残留物的方法
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
US11952660B2 (en) * 2019-07-29 2024-04-09 Applied Materials, Inc. Semiconductor processing chambers and methods for cleaning the same
TWI861210B (zh) 2019-09-09 2024-11-11 美商應用材料股份有限公司 輸送反應氣體之處理系統與方法
CN115244671A (zh) * 2020-03-02 2022-10-25 朗姆研究公司 将涡轮泵连接到处理模块的转接板
WO2021216260A1 (en) * 2020-04-20 2021-10-28 Applied Materials, Inc. Multi-thermal cvd chambers with shared gas delivery and exhaust system
CN112002660B (zh) * 2020-08-27 2024-01-19 南京国盛电子有限公司 一种半导体处理装置、处理方法及应用
CN116368269A (zh) 2020-10-13 2023-06-30 周星工程股份有限公司 基板处理设备
US12188148B2 (en) * 2020-12-22 2025-01-07 Applied Materials, Inc. Multi-layer EPI chamber body
CN112768384B (zh) * 2021-01-26 2024-02-27 西安奕斯伟材料科技股份有限公司 预热环及晶圆外延生长设备
US11781212B2 (en) * 2021-04-07 2023-10-10 Applied Material, Inc. Overlap susceptor and preheat ring
US12060651B2 (en) 2021-05-11 2024-08-13 Applied Materials, Inc. Chamber architecture for epitaxial deposition and advanced epitaxial film applications
US12018372B2 (en) 2021-05-11 2024-06-25 Applied Materials, Inc. Gas injector for epitaxy and CVD chamber
JP7622237B2 (ja) * 2021-05-11 2025-01-27 アプライド マテリアルズ インコーポレイテッド エピタキシチャンバ及びｃｖｄチャンバのためのガスインジェクタ
US12091749B2 (en) 2021-05-11 2024-09-17 Applied Materials, Inc. Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet
US12221696B2 (en) * 2022-05-27 2025-02-11 Applied Materials, Inc. Process kits and related methods for processing chambers to facilitate deposition process adjustability
US20240112931A1 (en) * 2022-10-03 2024-04-04 Applied Materials, Inc. Cassette structures and related methods for batch processing in epitaxial deposition operations
CN117904601A (zh) * 2022-10-10 2024-04-19 中微半导体设备(上海)股份有限公司 一种衬底处理设备及方法
US20240254627A1 (en) * 2023-01-27 2024-08-01 Applied Materials, Inc. Injectors, liners, process kits, processing chambers, and related methods for gas flow in batch processing of semiconductor manufacturing
US20250191897A1 (en) * 2023-12-07 2025-06-12 Applied Materials, Inc. Cross flow gas delivery for particle reduction
US12497693B2 (en) * 2024-03-27 2025-12-16 Applied Materials, Inc. Modular flow chamber kits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing
CN119297121B (zh) * 2024-11-15 2025-04-18 深圳市新凯来工业机器有限公司 半导体工艺腔室和半导体工艺设备

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002001100A (ja) * 2000-06-22 2002-01-08 Mitsubishi Heavy Ind Ltd プラズマ処理装置
JP2002100570A (ja) * 2000-09-22 2002-04-05 Komatsu Electronic Metals Co Ltd 枚葉式気相成長装置
US6500734B2 (en) * 1993-07-30 2002-12-31 Applied Materials, Inc. Gas inlets for wafer processing chamber
JP2003133298A (ja) * 2001-10-19 2003-05-09 Tokyo Electron Ltd マイクロ波プラズマ基板処理装置
JP2004134625A (ja) * 2002-10-11 2004-04-30 Toshiba Corp 半導体装置の製造方法と製造装置
JP2005183510A (ja) * 2003-12-17 2005-07-07 Shin Etsu Handotai Co Ltd 気相成長装置およびエピタキシャルウェーハの製造方法
KR100659964B1 (ko) * 1999-07-09 2006-12-22 오또꿈뿌 오와이제이 구멍을 막기 위한 방법 및 이 방법에 의해 제조되는 냉각요소
JP2007324286A (ja) * 2006-05-31 2007-12-13 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 成膜反応装置及び同方法
JP2007324285A (ja) * 2006-05-31 2007-12-13 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 成膜反応装置
JP2008235830A (ja) * 2007-03-23 2008-10-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 気相成長装置
CN101730921A (zh) * 2007-05-30 2010-06-09 应用材料股份有限公司 基板清洁腔室与其部件
JP2010263112A (ja) * 2009-05-08 2010-11-18 Sumco Corp エピタキシャル成長装置及びシリコンエピタキシャルウェーハの製造方法
JP2012509575A (ja) * 2008-11-19 2012-04-19 アプライド マテリアルズ インコーポレイテッド 基板処理のための高温測定法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142004A (en) * 1976-01-22 1979-02-27 Bell Telephone Laboratories, Incorporated Method of coating semiconductor substrates
US4223048A (en) * 1978-08-07 1980-09-16 Pacific Western Systems Plasma enhanced chemical vapor processing of semiconductive wafers
US5269847A (en) * 1990-08-23 1993-12-14 Applied Materials, Inc. Variable rate distribution gas flow reaction chamber
US5433780A (en) * 1992-11-20 1995-07-18 Tokyo Electron Limited Vacuum processing apparatus and exhaust system that prevents particle contamination
US5916369A (en) 1995-06-07 1999-06-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
JP3243125B2 (ja) * 1994-06-27 2002-01-07 東京エレクトロン株式会社 処理装置
KR19990002605A (ko) 1997-06-20 1999-01-15 이형도 브러쉬레스 모터용 연성 회로판의 단속 구조
KR19990002605U (ko) * 1997-06-27 1999-01-25 김영환 챔버 내벽 보호용 실린더
US6486081B1 (en) * 1998-11-13 2002-11-26 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
JP4588894B2 (ja) * 2001-01-31 2010-12-01 信越半導体株式会社 気相成長装置及びエピタキシャルウェーハの製造方法
JP2002231614A (ja) 2001-02-05 2002-08-16 Canon Inc 剥離用当て板、剥離装置及び方法
US20030198754A1 (en) * 2001-07-16 2003-10-23 Ming Xi Aluminum oxide chamber and process
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7253084B2 (en) * 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
KR20060059305A (ko) * 2004-11-26 2006-06-01 삼성전자주식회사 반도체 공정 장비
JP4854317B2 (ja) * 2006-01-31 2012-01-18 東京エレクトロン株式会社 基板処理方法
KR100978407B1 (ko) * 2006-03-06 2010-08-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP5074741B2 (ja) * 2006-11-10 2012-11-14 株式会社日立ハイテクノロジーズ 真空処理装置
US7976634B2 (en) 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
KR20080073840A (ko) * 2007-02-07 2008-08-12 세메스 주식회사 내벽 보호체를 구비하는 반도체 제조 설비
US20080220150A1 (en) * 2007-03-05 2008-09-11 Applied Materials, Inc. Microbatch deposition chamber with radiant heating
JP2010524225A (ja) * 2007-04-02 2010-07-15 ソースル シーオー エルティディー 基板支持装置及びこれを備えるプラズマエッチング装置
JP5096047B2 (ja) * 2007-06-14 2012-12-12 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波透過板
US20100081284A1 (en) * 2008-09-29 2010-04-01 Applied Materials, Inc. Methods and apparatus for improving flow uniformity in a process chamber
KR101603176B1 (ko) * 2010-02-12 2016-03-14 어플라이드 머티어리얼스, 인코포레이티드 프로세스 챔버 가스 유동 개선들
KR101092122B1 (ko) * 2010-02-23 2011-12-12 주식회사 디엠에스 에칭 프로파일 제어를 위한 가스 인젝션 시스템
US8597462B2 (en) * 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
JP5837178B2 (ja) * 2011-03-22 2015-12-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 化学気相堆積チャンバ用のライナアセンブリ
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
KR102291460B1 (ko) 2013-04-30 2021-08-19 어플라이드 머티어리얼스, 인코포레이티드 공간적으로 분포된 가스 통로들을 갖는 유동 제어 라이너

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6500734B2 (en) * 1993-07-30 2002-12-31 Applied Materials, Inc. Gas inlets for wafer processing chamber
KR100659964B1 (ko) * 1999-07-09 2006-12-22 오또꿈뿌 오와이제이 구멍을 막기 위한 방법 및 이 방법에 의해 제조되는 냉각요소
JP2002001100A (ja) * 2000-06-22 2002-01-08 Mitsubishi Heavy Ind Ltd プラズマ処理装置
JP2002100570A (ja) * 2000-09-22 2002-04-05 Komatsu Electronic Metals Co Ltd 枚葉式気相成長装置
JP2003133298A (ja) * 2001-10-19 2003-05-09 Tokyo Electron Ltd マイクロ波プラズマ基板処理装置
JP2004134625A (ja) * 2002-10-11 2004-04-30 Toshiba Corp 半導体装置の製造方法と製造装置
JP2005183510A (ja) * 2003-12-17 2005-07-07 Shin Etsu Handotai Co Ltd 気相成長装置およびエピタキシャルウェーハの製造方法
JP2007324286A (ja) * 2006-05-31 2007-12-13 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 成膜反応装置及び同方法
JP2007324285A (ja) * 2006-05-31 2007-12-13 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 成膜反応装置
JP2008235830A (ja) * 2007-03-23 2008-10-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 気相成長装置
CN101730921A (zh) * 2007-05-30 2010-06-09 应用材料股份有限公司 基板清洁腔室与其部件
JP2012509575A (ja) * 2008-11-19 2012-04-19 アプライド マテリアルズ インコーポレイテッド 基板処理のための高温測定法
JP2010263112A (ja) * 2009-05-08 2010-11-18 Sumco Corp エピタキシャル成長装置及びシリコンエピタキシャルウェーハの製造方法

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