CN111146139A - 用于制造晶片的装置和方法 - Google Patents

用于制造晶片的装置和方法 Download PDF

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CN111146139A
CN111146139A CN201911073157.6A CN201911073157A CN111146139A CN 111146139 A CN111146139 A CN 111146139A CN 201911073157 A CN201911073157 A CN 201911073157A CN 111146139 A CN111146139 A CN 111146139A
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support
arms
frame
substrate
layer
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R·安扎隆
N·法拉泽托
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STMicroelectronics SRL
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STMicroelectronics SRL
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Abstract

本公开的各实施例涉及用于制造晶片的装置和方法。各种实施例提供了用于制造诸如SiC晶片的晶片的装置和方法。装置包括具有多个用于支撑基板的臂的支撑件。臂允许支撑件和基板之间的物理接触最小化。结果，当基板熔化时，臂和所融化的材料之间的表面张力减小，并且所融化的材料将不太可能粘附到支撑件上。

Description

用于制造晶片的装置和方法
技术领域
本公开涉及用于制造半导体晶片的装置和方法。
背景技术
半导体器件通常在硅晶片中制造。然而，至少部分地由于SiC的化学物理性质，碳化硅(SiC)晶片已经变得越来越流行。例如，SiC通常具有比硅更高的带隙。结果，即使相对薄的厚度，SiC也比硅具有更高的击穿电压。因此，SiC对于具有高电压的应用，例如电力应用是期望的。
SiC可能以多种不同的晶体结构或多型形式出现。最常见的多型是立方多型(3C多型)，六边形多型(4H和6H多型)和菱形多型(15R多型)。3C SiC晶片与其他晶片多型相比具有独特的性能。例如，与4H SiC晶片相比，3C SiC晶片通常具有较低的陷阱密度和/或较高的沟道电子迁移率。
发明内容
本公开涉及用于制造诸如碳化硅(SiC)晶片的半导体晶片的装置和方法。
根据一个实施例，该装置包括主体、加热器、输入管、输出管道、支撑件和容器。支撑件位于容器上和反应室中。支撑件包括用于支撑诸如硅基板的基板或晶片的多个臂。臂允许支撑件和基板之间的物理接触最小化。结果，当基板熔化时，臂和所熔化的材料之间的表面张力减小，并且所熔化的材料将不太可能粘附到支撑件本身。
根据一个实施例，一种方法被用于制造SiC晶片。该方法包括将硅基板放置在支撑体上，以及通过将硅基板暴露于前体流(即异质外延)中而在硅基板上形成碳化硅的第一层。硅基板具有第一熔化温度，并且碳化硅具有高于第一熔化温度的第二熔化温度。该方法还包括将反应室加热到高于第一熔化温度并且低于第二熔化温度的温度，使得硅基板开始熔化。熔化的硅基板通过支撑件中的开口并且排入容器中。维持反应室的温度，直到第一碳化硅层与硅基板基本上分离为止。在硅基板熔化的同时或之后，将第一碳化硅层暴露于前体流中以形成第二碳化硅层(即均质外延)。一旦第二碳化硅层达到期望的厚度，则通过蚀刻工艺移除与第一碳化硅层耦合的硅基板的任何剩余部分。
附图说明
图1是根据本公开的实施例的装置的截面图。
图2是根据本公开的实施例的支撑件的透视图。
图3是图2的支撑件的平面图。
图4是沿图3所示的轴线的支撑件的截面图。
图5是沿图3所示的轴线的支撑件的截面图。
图6是图2的支撑件的臂的放大透视图。
图7是图6的臂的放大平面图。
图8是臂沿图7所示的轴的放大截面图。
图9至图13是示出根据本文公开的实施例的使用图1的装置制造晶片的方法的各个阶段的截面图。
具体实施方式
在以下描述中，阐述了某些特定细节以便提供对本公开的各种实施例的透彻理解。然而，本领域技术人员将理解，可以在没有这些具体细节的情况下实践本公开。在一些情况下，未描述与例如反应室，制造工艺和/或半导体晶片相关联的众所周知的细节，以避免使本公开的实施例的描述不清楚。
在整个说明书中，对“一个(one)实施例”或“一(a)实施例”的引用意味着结合该实施例描述的特定特征，结构或特性包括在至少一个实施例中。因此，在整个说明书中各处出现的短语“在一个(one)实施例中”或“一(a)实施例中”不一定都指的是同一实施例。此外，在一个或多个实施例中，可以以任何合适的方式组合特定的特征、结构或特性。
在附图中，相同的附图标记表示相似的特征或元件。附图中特征的尺寸和相对位置不必按比例绘制。
在标题为“用于制造碳化硅晶片的装置(APPARATUS FOR MANUFACTURING ASILICON CARBIDE WAFER)”的美国专利申请号15/715,940中公开了一种用于制造碳化硅(SiC)晶片的解决方案。美国专利申请号15/715,940中公开的SiC晶片的制造包括例如将硅基板放置在具有多个条和开口的支撑件上，在硅基板上生长3C-SiC外延层，然后通过熔化硅基板将硅基板与3C-SiC外延层分离。熔化的硅通过支撑体中的多个开口排入容器中。此后，发明人发现美国专利申请号15/715,940中公开的支撑件可能不总是将熔化的硅适当地排入容器中。而是，发明人发现，由于熔化的硅与支撑件之间的表面张力，熔化的硅有时有时会粘附或粘着在支撑件本身上。
本文描述了一种用于制造诸如SiC晶片的晶片的改进的装置和方法。如美国专利申请号15/715,940中所述，该装置可以解决与制造SiC晶片相关的一个或多个问题。
图1是根据一个实施例的装置10的截面图。装置10包括主体12、加热器14、输入管道16、输出管道18、支撑件20和容器22。
主体12形成反应室24。反应室24提供用于发生各种反应的封闭空间。支撑件20和容器22位于反应室24内。在一个实施例中，主体12由绝缘材料制成，该绝缘材料使反应室24与外部环境热绝缘。
加热器14被耦合到主体12。加热器14加热反应室24和反应室24内的任何内容物(例如，支撑件20、容器22、气体、基板、晶片或其他各种物体)。加热设备14可以是任何类型的加热设备。例如，加热器14可以是包括例如多个线圈的感应式加热器；包括例如覆盖有碳化物的电阻器的电阻加热器；等等
输入管道16提供从装置10外部的环境进入反应室24的流体路径。在一个实施例中，如下面将参照图9至图13进一步详细讨论的，输入管道16用于将前体和气体输入到反应室24中。
输出管道18提供从反应室24到反应室24外部的环境的流体路径。在一个实施例中，如下面将参照图9至图13更详细地讨论的，输出管道18为用于从反应室24排出反应气体。
在一个实施例中，装置10是水平通量反应室。在该实施例中，如图1所示，输入管道16和输出管道18彼此水平对准，并且气体沿着例如支撑件20的上表面纵向流动。其他配置也是可能的。例如，在一个实施例中，装置10是竖直通量反应室。在该实施例中，输入管道16和输出管道18彼此竖直对准，并且气体横向于例如支撑件20的上表面横向流动。
支撑件20位于容器22上并且在反应室24中。支撑件20提供了一个平台，以在反应室24内接收和保持各种物体，例如基板或晶片。下面参照图9至图13更详细地描述，在制造SiC晶片期间，将硅基板放置在支撑件20上。支撑件20通常被称为基座。
如将在下面关于图2至图8更详细地讨论的，支撑件20包括框26，该框26定位在容器22上并由容器22支撑；并且框20设置在容器22上。开口28提供排水，材料可在其中流过；多个臂30支撑例如硅基板。
容器22被定位在反应室24中并且直接位于支撑件20的下面。支撑件20搁置在容器22上。容器22收集通过支撑件20的开口28排出的任何材料。容器22包括基座。底部32直接位于支撑件20的开口28和臂30的下面。侧壁34直接位于支撑件20的框26的下面。在一个实施例中，侧壁34与支撑件20的框26直接物理接触。
图2是根据本公开的一实施例的支撑件20的透视图。图3是根据本公开的实施例的支撑件20的平面图。图4是根据本公开的实施例的支撑件20沿图3所示的轴线的截面图。图5是根据本公开的实施例的支撑件20沿图3所示的轴线的截面图。一起回顾图2至5是有益的。支撑件20包括框26、开口28和臂30。
框26将多个臂30物理地耦合在一起。如先前关于图1所论述，框26搁置在容器22的侧壁34上。框26可具有任何形状。例如，框26的形状可以是圆形或矩形。在一个实施例中，如图3最佳所示，支撑件20具有圆形形状。
开口28被形成在框26中。换句话说，开口28被框26围绕和包围。开口28提供排水口，材料可以流过该排水口。例如，如将在下面相对于图9至图13进一步详细讨论的，硅基板被放置在支撑件20上并且被熔化并通过开口28排出。
臂30通过框26彼此物理耦合，并且从框26悬臂伸出。特别地，如图1和图2最佳所示，多个臂中的每个具有固定端，该固定端附接至框26。与固定端相对的自由端悬挂在容器22上。在一个实施例中，如图2至3最佳所示，臂30从框26朝开口28的中心延伸。臂30用于在反应室24内支撑基板或晶片。例如，如将在下面进一步详细讨论的，将硅基板放置在支撑体20上以制造SiC晶片。
在一实施例中，臂30中的所有臂也可具有相同的长度。在另一个实施例中，臂30具有变化的长度。例如，在一个实施例中，臂30包括多组臂，每组臂具有不同的长度。例如，如图2和图3最佳所示，臂30包括两组臂：第一组臂36具有第一长度L1，第二组臂38具有第二长度L2，第二长度L2小于第一长度L1。第一长度L1。通过具有多组具有不同长度的臂，支撑件20能够支撑不同尺寸的晶片。例如，参考图3，第一组臂36被构造成支撑具有轮廓的第一圆形基板40，所述第一轮廓具有第一半径，第二组臂38被构造成支撑具有轮廓42的第二圆形基板，第二半径大于第一半径。
在一个实施例中，臂30中的所有臂均位于同一平面内。例如，如图3至图5所示，第一组臂36和第二组臂38位于同一平面内。在另一个实施例中，臂30可以具有定位在不同的平行平面中的臂。例如，在一个实施例中，第一组臂36位于第一平面中，而第二组臂38位于第二平面中，该第二平面在第一平面之上并与第一平面平行。换句话说，第二组臂38位于第一组臂36的上方。具有位于不同平面中的臂使与定位在支撑件20上的基板接触的臂的数量最小化。轮廓42位于第二组臂38上，第二圆形基板将不与第一组臂36接触，因为第一组臂36位于第二组臂38下方。
在一个实施例中，多组臂中的臂以交替的方式定位。例如，如图2和3最佳所示，第一组臂36与第二组臂38围绕框26交替放置。
尽管第一组臂36和第二组臂38均包括四个臂，但是多组臂中的每组臂可包括任意数目的臂。例如，第一组臂36可以包括3、5、6或8个臂。
在一个实施例中，臂30彼此间隔开。例如，如图2至图3最佳所示，臂30通过开口28彼此间隔开。使臂30彼此间隔开确保了臂30不会阻塞或阻碍通过该开口排出的材料。28。
在一个实施例中，臂30沿着框26彼此间隔基本相等的距离。例如，参考图3，臂30沿着框26彼此间隔开距离D1。
如前所述，在一个实施例中，臂30包括多组臂，每组臂具有不同的长度。在一个实施例中，每组臂的臂沿着框26彼此间隔基本相等的距离。例如，参考图3，第一组臂36可以彼此分开第二距离D2。类似地，第二组臂38可以彼此分开第三距离D3。在一个实施例中，第二距离D2和第三距离D3基本上彼此相等。
如前所述，美国专利申请号15/715,940中公开的支撑件可能不总是将熔化的硅适当地排入容器中。而是，发明人发现，由于熔化的硅与支撑件之间的表面张力，熔化的硅有时会粘附或粘着在支撑件本身上。为了解决这个问题，在一个或多个实施例中，臂30被配置为最小化臂30与放置在臂30上的基板(例如，硅基板)之间的物理接触。通过使臂30与基板30之间的物理接触最小化。放置在臂30上的基板，当基板熔化时，臂30与熔融材料(例如，熔化的硅)之间的表面张力减小。结果，熔融材料将不太可能粘附或粘在臂30上，而是从臂30流出并流入容器22。
图6是根据本公开的实施例的支撑件20的臂30的放大透视图。图7是臂30的放大平面图，图8是臂30沿图7所示的轴线的放大剖视图。将图6至图8一起回顾是有益的。臂30包括主体部分44和凸起部分46。
主体部分44包括物理地耦合到框26的第一端和物理地耦合到凸起部分46的第二端。在一个实施例中，如图2至图3最佳所示，臂30从框26朝着臂26延伸。主体部分44用于将凸起部分46定位成远离框26。这确保了当将基板放置在凸起部分46上然后熔化时，熔化的材料不会流到开口28的中心。框26，并流入容器22。主体部分44包括上表面48和侧面50。
主体部分44的上表面48是平面。在一个实施例中，上表面48与框26的上表面52基本共面。
主体部分44的侧表面50是倾的(slanted)或倾斜的表面。侧表面50向下倾斜或平铺，使得熔化的材料可以容易地从主体部分33滑出，通过开口28滑入容器22。
凸起部分46物理地耦合至主体部分44。凸起部分46用于将基板支撑在反应室24内。凸起部分46包括上表面54和侧面56。
凸起部分46的上表面54提供了平坦的表面，以使基板搁置在其上。例如，如将在下面关于图9更详细地讨论的，在SiC晶片的制造期间，硅基板被定位在上表面54上。在一个实施例中，凸起部分46的上表面54和主体部分44的上表面48基本彼此平行。
上表面54使得支撑件20与放置在支撑件20上的基板(特别是臂30)之间的物理接触最小化。即，当将基板放置在上表面54上时，基板将物理接触上表面54，但是将不物理接触支撑件20的其余部分(例如，框26，臂30的主体部分44和凸起部分46的侧面56等)。因此，当基板熔化时，支撑件20和熔融材料(例如，熔化的硅)之间的表面张力减小。结果，熔融材料不太可能粘附或粘在臂30上，而是从臂30流出并流入容器22。
类似于主体部分44的侧面50的凸起部分46的侧面56向下斜或倾斜，使得熔化的材料可以容易地通过开口46滑出凸起部分46，穿过开口28，并且进入容器22。凸起部分46可包括任意数目的侧表面56(例如，一个、三个、四个、五个侧表面)。例如，在图6至图8所示的实施例中，凸起部分46是金字塔形的，具有四个侧面56和在金字塔的顶点处的上表面54。作为另一个示例，凸起部分46可以是锥形的，具有单个侧面56和在锥的顶点处的上表面54。
凸起部分46将放置在其上表面54上的基板升高或凸起，使其位于主体部分44和/或框26的上方。例如，如图8所示，上表面54凸起到基板46的上表面48的上方距离为D4。在一个实施例中，距离D4在0.5至3毫米之间。如将参考图13更详细地讨论的，使位于凸起部分46上的基板，特别是凸起部分46的上表面54凸起，允许蚀刻气体流动并接触基板的下表面。
支撑件20可以由多种材料制成。例如，支撑件20可以由石墨、铁、铜、铝、镍等制成。在一个实施例中，支撑件20由具有高熔化温度的材料制成，使得支撑件20在加热器14接通时不会熔化。在一个实施例中，支撑件20的熔化温度大于旨在在反应室24中熔化的基板的熔化温度。
在一个实施例中，包括框26和臂30的支撑件20是单个连续件。例如，支撑件20可以由单件材料形成。
可以使用各种制造技术来制造支撑件20。例如，可以通过使用成形压力机冲压材料的平板来制造支撑件20。
图9至图13是示出根据本文公开的实施例的使用图1的装置制造晶片的方法的各个阶段的截面图。在图9至图13所示的实施例中，制造了SiC晶片，例如3C SiC晶片。注意，为了简单起见，在图9至图13中未示出主体12、加热器14、输入导管16和输出导管18。
如图9所示，第一材料的基板放置在支撑体20上，并在反应室24中。在图9所示的实施例中，硅基板58放置在支撑体20上，并在反应室24中。硅基板58位于臂30的凸起部分46的上表面54上。在一个实施例中，硅基板58具有晶体结构。在一个实施例中，当硅基板58位于支撑件20上时，反应室24处于室温。
一旦将硅基板58放置在支撑件20上，就将反应室24密封并由加热器14加热至第一温度。在一个实施例中，第一温度在450至550摄氏度之间。反应室24也被设置为具有第一压力水平。在一个实施例中，第一压力水平在8E-5和12E-5巴之间。
在将反应室24加热到第一温度之后，通过加热器14将反应室24加热到大于第一温度的第二温度。在一个实施例中，第二温度在1050至1150摄氏度之间。反应室24也被设置为具有大于第一压力水平的第二压力水平。在一个实施例中，第二压力水平在75-125mbar之间。
在剩余的过程中，反应室24保持在第二压力水平。
在将反应室24加热到第二温度之后，将硅基板58浸入氢(H2)中。H2通过输入管道16被引入反应室24中。另外，硅基板58通过将氯化氢(HCl)通过输入管道16被引入反应室24中而经受活化操作。
然后通过加热器14将反应室10加热至大于第二温度的第三温度。在一个实施例中，第三温度在1340至1400摄氏度之间。
在将反应室24加热至第三温度时或之后，将碳前体通过输入导管16引入反应室24中。碳前体将硅基板26的表面硅原子碳化以形成例如3C SiC的SiC薄层(例如几纳米的数量级)。这通常称为斜坡碳化。如下所述，SiC薄层充当SiC生长的种子。
一旦反应室24处于第三温度，就将硅前体添加到反应室24中的碳前体中。通过将硅前体引入反应室24中，第二材料层开始生长。特别地，如图10所示，第一SiC层60开始从SiC薄层开始外延生长。这通常被称为异质外延生长。
在保持H2通过输入管道16流入反应室24中的同时，进行熔化过程。特别地，反应室24被加热器14加热到第四温度。第四温度大于硅基板58的熔化温度并且小于第一SiC层60的熔化温度。在一个实施例中，第四温度在1550至1650摄氏度之间。结果，如图11所示，硅基板58熔化并排到容器22中。也就是说，硅基板58的熔化的硅材料66从支撑件20的上侧62穿过开口28流动，硅基板58的熔化的硅材料66被收集在容器22中。
如前所述，上表面54允许支撑件20与放置在支撑件20上的基板之间的物理接触被最小化。在这种情况下，由于将硅基板58放置在臂30的凸起部分46的上表面54上，所以硅基板58将物理接触上表面54，但不会物理接触支撑件20的其余部分(例如，框26，臂30的主体部分44和凸起部分46的侧面56等)。因此，当硅基板58熔化时，支撑件20和熔化的硅材料66之间的表面张力减小。结果，熔化的硅材料66不太可能粘附或粘在臂30上，而是从臂30流出并流入容器22。
此外，如前所述，臂30的主体部分44和凸起部分46分别具有侧表面50和侧表面56，它们分别向下斜或倾斜。结果，熔化的硅材料66可以容易地从臂30滑出，穿过开口28，并滑入容器22中。
在一个实施例中，保持反应室24的第四温度，直到从第一SiC层60移除所有硅基板58为止。
在一个实施例中，保持反应室24的第四温度直到硅基板58基本上熔化并与第一SiC层60分离。例如，如图11所示，反应室24的第四温度可以是保持直到硅基板58的小的残余部分70(例如，硅材料的薄层)保留在支撑件20上。在该实施例中，如将参照图13更详细地讨论的，硅基板58的残余部分70被保留。通过随后的蚀刻工艺移除硅基板58。
如图12所示，硅和碳前驱体的流通过输入导管16被引入反应室24。通过将硅和碳前驱体引入反应室24，第一SiC层60的厚度继续增长。换句话说，第二SiC层68开始在第一SiC层60上生长。这通常被称为同质外延生长。在一个实施例中，硅与碳前驱物的流动与硅基板58的熔化同时进行。在一个实施例中，硅与碳前驱物的流动在硅基板58的熔化过程完成之后执行。
当第二SiC层68达到期望的厚度时，硅和碳前体的流动停止。此外，反应室24中的任何反应气体通过输出管道18从反应室24中移除。
如先前所论述，在一个实施例中，维持反应室24的第四温度，直到从第一SiC层60移除所有硅基板58为止。在该实施例中，在第二SiC层68达到期望的厚度之后，将反应室10关闭，排气并返回较低的温度(例如，室温)。在一个实施例中，随后将所得的SiC晶片72浸入H2或Ar中。
如前所述，在一个实施例中，保持反应室24的第四温度，直到硅基板58基本上熔化并与第一SiC层60分离为止。在该实施例中，在第二SiC层68达到期望的厚度之后，然后通过随后的蚀刻工艺移除硅基板58的残留部分70。如图13所示，通过输入管道16将诸如盐酸(HCl)之类的蚀刻气体引入反应室24中。然后，将仍耦合至第一SiC层60的硅基板58的剩余部分70。通过蚀刻气体移除。移除的硅基板58的残留部分70被收集在容器22中。一旦移除了硅基板58的残留部分70，则将反应室10关闭，排气并返回较低的温度(例如，室内温度)。在一个实施例中，随后将所得的SiC晶片72浸入H2或Ar中。
注意，由于臂30的凸起部分46升高或凸起第一SiC层60、第二SiC层68和残余部分70至主体部分44和/或框26的上方，因此可以通过随后的蚀刻工艺移除硅基板58的残余部分70。通过凸起第一SiC层60、第二SiC层68和残余部分70，蚀刻气体能够流动以接触残余部分70，它们位于第一SiC层60的下方。
尽管已经就制造SiC晶片对装置10进行了较大的讨论，但是装置10可用于第一材料层被融化以及与第二材料层分离的任何工艺中。
各个实施例提供了一种用于制造诸如SiC晶片的晶片的装置和方法。该装置包括具有用于支撑诸如硅基板的基板的多个臂的支撑件。臂被配置为最小化支撑件与基板之间的物理接触。结果，当基板熔化时，臂和所融化的材料之间的表面张力减小，并且所融化的材料将不太可能粘附或粘着到支撑件上。
可以将上述各种实施例组合以提供其他实施例。可以根据以上详细描述对实施例进行这些和其他改变。通常，在以下权利要求中，所使用的术语不应解释为将权利要求限制为说明书和权利要求中公开的特定实施例，而应解释为包括所有可能的实施例以及权利要求所限定的等同物的全部范围。因此，权利要求不受公开内容的限制。

Claims (20)

1.一种装置，包括：
腔室；
在所述腔室中的容器；
在所述腔室中和所述容器上的支撑件，所述支撑件包括：框、所述框中的开口、和多个臂，所述多个臂中的每个臂具有固定端和与所述固定端相对的自由端，所述固定端被附接到所述框，所述自由端延伸进入所述开口并且被悬挂在所述容器上。
2.根据权利要求1所述的装置，其中所述多个臂中的每个臂从所述框并且朝向所述开口的中心延伸。
3.根据权利要求1所述的装置，其中所述多个臂中的每个臂包括主体部分和凸起部分，所述主体部分具有附接到所述框的第一端和附接到所述凸起部分的第二端。
4.根据权利要求3所述的装置，其中所述凸起部分包括上表面和多个成角度的侧表面。
5.根据权利要求1所述的装置，其中所述框和所述开口具有圆形形状。
6.根据权利要求1所述的装置，还包括：
加热器，被配置为加热所述腔室；
输入管道，被配置为将气体引入到所述腔室中；和
输出管道，被配置为从所述腔室移除所述气体。
7.根据权利要求1所述的装置，其中所述容器包括侧壁，并且所述支撑件被定位在所述侧壁上。
8.一种支撑件，包括：
框；
所述框中的开口；和
延伸到所述开口中的多个臂，所述多个臂中的每个臂从所述框被悬臂伸出。
9.根据权利要求8所述的支撑件，其中所述多个臂包括具有第一长度的第一组臂、以及具有第二长度的第二组臂，所述第二长度大于所述第一长度。
10.根据权利要求8所述的支撑件，其中所述多个臂中的每个臂包括：主体部分，被耦合至所述框；以及凸起部分，被耦合至所述主体部分。
11.根据权利要求10所述的支撑件，其中所述凸起部分包括上表面和多个成角度的侧表面。
12.根据权利要求11所述的支撑件，其中所述主体部分包括上表面和多个成角度的侧表面。
13.根据权利要求12所述的支撑件，其中所述凸起部分的所述上表面被定位在所述主体部分的所述上表面之上。
14.根据权利要求12所述的支撑件，其中所述主体部分的所述上表面与所述框的表面基本共面。
15.一种方法，包括：
在第二材料的基板上形成第一材料的层，所述第一材料的所述层具有第一厚度；
在所述第一材料的所述层被形成之后，通过熔化所述基板的第一部分来将所述基板的所述第一部分从所述第一材料的所述层分离；
继续形成所述第一材料的所述层，直到所述第一材料的所述层具有大于所述第一厚度的第二厚度；和
在所述第一材料的所述层具有所述第二厚度之后，通过蚀刻所述基板的第二部分来将所述基板的所述第二部分从所述第一材料的所述层分离。
16.根据权利要求15所述的方法，其中将所述基板的所述第一部分从所述第一材料的所述层分离包括：将所述第一材料的所述层和所述基板的所述第一部分加热到低于所述第一材料的熔化温度的、并且高于所述第二材料的熔化温度的温度。
17.根据权利要求15所述的方法，其中所述第一材料包括碳化硅，并且所述第二材料包括硅。
18.根据权利要求15所述的方法，其中所述基板被定位在支撑件上，所述支撑件包括框、所述框中的开口以及延伸到所述开口中的多个臂，并且所述多个臂中的每个壁从所述框被悬臂伸出。
19.根据权利要求18所述的方法，其中将所述基板的所述第一部分从所述第一材料的所述层分离包括：通过所述框中的所述开口排出所融化的材料。
20.根据权利要求15所述的方法，其中在所述基板的所述第一部分从所述第一材料的所述层被分离的同时，所述第一材料的所述层被继续形成。
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