CN111133558B - 用钴填充基板特征的方法与设备 - Google Patents
用钴填充基板特征的方法与设备 Download PDFInfo
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- CN111133558B CN111133558B CN201880061451.2A CN201880061451A CN111133558B CN 111133558 B CN111133558 B CN 111133558B CN 201880061451 A CN201880061451 A CN 201880061451A CN 111133558 B CN111133558 B CN 111133558B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/711,169 US10304732B2 (en) | 2017-09-21 | 2017-09-21 | Methods and apparatus for filling substrate features with cobalt |
| US15/711,169 | 2017-09-21 | ||
| PCT/US2018/051509 WO2019060296A1 (en) | 2017-09-21 | 2018-09-18 | METHODS AND APPARATUS USED TO FILL SUBSTRATE CHARACTERISTICS WITH COBALT |
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| Publication Number | Publication Date |
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| CN111133558A CN111133558A (zh) | 2020-05-08 |
| CN111133558B true CN111133558B (zh) | 2024-04-02 |
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| CN201880061451.2A Active CN111133558B (zh) | 2017-09-21 | 2018-09-18 | 用钴填充基板特征的方法与设备 |
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| US11410891B2 (en) | 2019-08-26 | 2022-08-09 | International Business Machines Corporation | Anomaly detection and remedial recommendation |
| US11164815B2 (en) | 2019-09-28 | 2021-11-02 | International Business Machines Corporation | Bottom barrier free interconnects without voids |
| US11776980B2 (en) * | 2020-03-13 | 2023-10-03 | Applied Materials, Inc. | Methods for reflector film growth |
| CN211879343U (zh) * | 2020-04-10 | 2020-11-06 | 北京北方华创微电子装备有限公司 | 一种半导体加工设备 |
| US11527437B2 (en) | 2020-09-15 | 2022-12-13 | Applied Materials, Inc. | Methods and apparatus for intermixing layer for enhanced metal reflow |
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| CN105518827A (zh) * | 2013-09-27 | 2016-04-20 | 应用材料公司 | 实现无缝钴间隙填充的方法 |
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| US9051641B2 (en) * | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
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| US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| WO2003030224A2 (en) * | 2001-07-25 | 2003-04-10 | Applied Materials, Inc. | Barrier formation using novel sputter-deposition method |
| US20070184652A1 (en) | 2006-02-07 | 2007-08-09 | Texas Instruments, Incorporated | Method for preparing a metal feature surface prior to electroless metal deposition |
| TW200746268A (en) * | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
| JP2008141050A (ja) | 2006-12-04 | 2008-06-19 | Ulvac Japan Ltd | 半導体装置の製造方法及び半導体装置の製造装置 |
| US20080132050A1 (en) * | 2006-12-05 | 2008-06-05 | Lavoie Adrien R | Deposition process for graded cobalt barrier layers |
| KR20090103058A (ko) | 2008-03-27 | 2009-10-01 | 주식회사 하이닉스반도체 | 반도체 소자 및 이의 제조 방법 |
| US20090246952A1 (en) | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | Method of forming a cobalt metal nitride barrier film |
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| US9218980B2 (en) * | 2013-09-13 | 2015-12-22 | Applied Materials, Inc. | Surface treatment to improve CCTBA based CVD co nucleation on dielectric substrate |
| US9741577B2 (en) * | 2015-12-02 | 2017-08-22 | International Business Machines Corporation | Metal reflow for middle of line contacts |
| US10128151B2 (en) * | 2016-12-16 | 2018-11-13 | Globalfoundries Inc. | Devices and methods of cobalt fill metallization |
| TWI809712B (zh) * | 2017-01-24 | 2023-07-21 | 美商應用材料股份有限公司 | 用於在基板上形成鈷層的方法 |
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- 2017-09-21 US US15/711,169 patent/US10304732B2/en active Active
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- 2018-09-18 JP JP2020516638A patent/JP7309697B2/ja active Active
- 2018-09-18 KR KR1020207010834A patent/KR102572732B1/ko active Active
- 2018-09-18 CN CN201880061451.2A patent/CN111133558B/zh active Active
- 2018-09-21 TW TW107133304A patent/TWI782094B/zh active
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| US20190088540A1 (en) | 2019-03-21 |
| TW201925532A (zh) | 2019-07-01 |
| JP2020534702A (ja) | 2020-11-26 |
| KR20200045563A (ko) | 2020-05-04 |
| KR102572732B1 (ko) | 2023-08-29 |
| WO2019060296A1 (en) | 2019-03-28 |
| JP7309697B2 (ja) | 2023-07-18 |
| TWI782094B (zh) | 2022-11-01 |
| US10304732B2 (en) | 2019-05-28 |
| CN111133558A (zh) | 2020-05-08 |
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