KR102572732B1 - 기판을 프로세싱하기 위한 방법들 및 장치 - Google Patents
기판을 프로세싱하기 위한 방법들 및 장치 Download PDFInfo
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- KR102572732B1 KR102572732B1 KR1020207010834A KR20207010834A KR102572732B1 KR 102572732 B1 KR102572732 B1 KR 102572732B1 KR 1020207010834 A KR1020207010834 A KR 1020207010834A KR 20207010834 A KR20207010834 A KR 20207010834A KR 102572732 B1 KR102572732 B1 KR 102572732B1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
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- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
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| US15/711,169 | 2017-09-21 | ||
| US15/711,169 US10304732B2 (en) | 2017-09-21 | 2017-09-21 | Methods and apparatus for filling substrate features with cobalt |
| PCT/US2018/051509 WO2019060296A1 (en) | 2017-09-21 | 2018-09-18 | METHODS AND APPARATUS USED TO FILL SUBSTRATE CHARACTERISTICS WITH COBALT |
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| US11410891B2 (en) | 2019-08-26 | 2022-08-09 | International Business Machines Corporation | Anomaly detection and remedial recommendation |
| US11164815B2 (en) | 2019-09-28 | 2021-11-02 | International Business Machines Corporation | Bottom barrier free interconnects without voids |
| US11776980B2 (en) * | 2020-03-13 | 2023-10-03 | Applied Materials, Inc. | Methods for reflector film growth |
| CN211879343U (zh) * | 2020-04-10 | 2020-11-06 | 北京北方华创微电子装备有限公司 | 一种半导体加工设备 |
| US11527437B2 (en) | 2020-09-15 | 2022-12-13 | Applied Materials, Inc. | Methods and apparatus for intermixing layer for enhanced metal reflow |
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| JP2012501543A (ja) | 2008-08-29 | 2012-01-19 | アプライド マテリアルズ インコーポレイテッド | 障壁表面上のコバルト堆積 |
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| KR960015719A (ko) * | 1994-10-12 | 1996-05-22 | 이온 충돌을 이용하여 반도체 기판상에 평탄한 층을 형성하기 위한 방법 및 장치 | |
| US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
| JP2005504885A (ja) * | 2001-07-25 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | 新規なスパッタ堆積方法を使用したバリア形成 |
| US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| US20070184652A1 (en) | 2006-02-07 | 2007-08-09 | Texas Instruments, Incorporated | Method for preparing a metal feature surface prior to electroless metal deposition |
| TW200746268A (en) * | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
| JP2008141050A (ja) * | 2006-12-04 | 2008-06-19 | Ulvac Japan Ltd | 半導体装置の製造方法及び半導体装置の製造装置 |
| US20080132050A1 (en) * | 2006-12-05 | 2008-06-05 | Lavoie Adrien R | Deposition process for graded cobalt barrier layers |
| KR20090103058A (ko) | 2008-03-27 | 2009-10-01 | 주식회사 하이닉스반도체 | 반도체 소자 및 이의 제조 방법 |
| US20090246952A1 (en) | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | Method of forming a cobalt metal nitride barrier film |
| US20090269507A1 (en) * | 2008-04-29 | 2009-10-29 | Sang-Ho Yu | Selective cobalt deposition on copper surfaces |
| US8795487B2 (en) | 2010-03-31 | 2014-08-05 | Applied Materials, Inc. | Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power |
| US8524600B2 (en) * | 2011-03-31 | 2013-09-03 | Applied Materials, Inc. | Post deposition treatments for CVD cobalt films |
| US9499901B2 (en) | 2012-01-27 | 2016-11-22 | Applied Materials, Inc. | High density TiN RF/DC PVD deposition with stress tuning |
| US9330939B2 (en) * | 2012-03-28 | 2016-05-03 | Applied Materials, Inc. | Method of enabling seamless cobalt gap-fill |
| US9218980B2 (en) * | 2013-09-13 | 2015-12-22 | Applied Materials, Inc. | Surface treatment to improve CCTBA based CVD co nucleation on dielectric substrate |
| CN105518827B (zh) * | 2013-09-27 | 2019-06-14 | 应用材料公司 | 实现无缝钴间隙填充的方法 |
| US9349637B2 (en) * | 2014-08-21 | 2016-05-24 | Lam Research Corporation | Method for void-free cobalt gap fill |
| US9741577B2 (en) * | 2015-12-02 | 2017-08-22 | International Business Machines Corporation | Metal reflow for middle of line contacts |
| US10128151B2 (en) * | 2016-12-16 | 2018-11-13 | Globalfoundries Inc. | Devices and methods of cobalt fill metallization |
| TWI809712B (zh) * | 2017-01-24 | 2023-07-21 | 美商應用材料股份有限公司 | 用於在基板上形成鈷層的方法 |
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| JP2012501543A (ja) | 2008-08-29 | 2012-01-19 | アプライド マテリアルズ インコーポレイテッド | 障壁表面上のコバルト堆積 |
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| CN111133558A (zh) | 2020-05-08 |
| JP7309697B2 (ja) | 2023-07-18 |
| CN111133558B (zh) | 2024-04-02 |
| JP2020534702A (ja) | 2020-11-26 |
| US20190088540A1 (en) | 2019-03-21 |
| TWI782094B (zh) | 2022-11-01 |
| US10304732B2 (en) | 2019-05-28 |
| TW201925532A (zh) | 2019-07-01 |
| KR20200045563A (ko) | 2020-05-04 |
| WO2019060296A1 (en) | 2019-03-28 |
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