CN111106217A - Preparation method of full-spectrum white light LED light-emitting device - Google Patents
Preparation method of full-spectrum white light LED light-emitting device Download PDFInfo
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- CN111106217A CN111106217A CN201811247999.4A CN201811247999A CN111106217A CN 111106217 A CN111106217 A CN 111106217A CN 201811247999 A CN201811247999 A CN 201811247999A CN 111106217 A CN111106217 A CN 111106217A
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- 238000001228 spectrum Methods 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 82
- 239000000843 powder Substances 0.000 claims abstract description 48
- 238000004806 packaging method and process Methods 0.000 claims abstract description 14
- 108010043121 Green Fluorescent Proteins Proteins 0.000 claims abstract description 12
- 238000005520 cutting process Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000009877 rendering Methods 0.000 abstract description 6
- 230000005284 excitation Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 description 5
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- 238000012858 packaging process Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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Abstract
The invention provides a preparation method of a full-spectrum white light LED light-emitting device, which comprises the following steps: preparing a purple light LED chip; sequentially preparing a red fluorescent powder film, a green fluorescent powder film and a blue fluorescent powder film; cutting according to the size of the light-emitting surface of the purple light LED chip to obtain a red phosphor film, a green phosphor film and a blue phosphor film with corresponding sizes; three purple light LED chips are taken as a light-emitting unit and are arranged according to a preset rule; in a light emitting unit, a red phosphor film, a green phosphor film and a blue phosphor film are respectively stuck on the surfaces of corresponding purple light LED chips; and carrying out RGB (red, green and blue) packaging on the light-emitting unit to obtain the full-spectrum white light LED light-emitting device. The problems of high and narrow blue light excitation peak and low CRI (color rendering index) index generated by single blue light excited fluorescent powder are effectively solved, and the CRI of the white light LED light-emitting device prepared by the preparation method is improved to 95% from the existing 80%.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of an LED chip.
Background
An led (light Emitting diode) lamp is a solid semiconductor device that can directly convert electricity into light. The light emission of the LED is based on the recombination of electrons and holes in the semiconductor material under the action of current, and the excess energy carried by the electrons needs to be released.
At present, white light is generally formed by matching a blue light technology and fluorescent powder, and the white light is obtained by two methods, one method is to coat yellow fluorescent powder which can be excited by the blue light on a blue LED chip with the wavelength of 460-470 nm, and the blue light emitted by the chip and the yellow light emitted by the fluorescent powder are complemented to form the white light. However, since the phosphor is easy to precipitate, the problems of uneven glue distribution, inaccurate glue distribution control and the like are easy to occur, so that the phenomena of poor light-emitting uniformity, poor tone consistency, easy color temperature deviation, unsatisfactory color rendering property and the like of the LED chip are caused, and the phenomena of high and uneven color temperature can also occur due to the fact that blue light occupies most of a light-emitting spectrum. The other method is to coat green and red fluorescent powder on a blue LED chip, and obtain white light by compounding blue light emitted by the chip with green light and red light emitted by the fluorescent powder. Furthermore, both methods have the disadvantages of poor consistency and color temperature variation with angle.
Although the method for forming white light by exciting mixed tricolor fluorescent powder by the UV-LED can effectively improve the color rendering of the light source, and can avoid high and narrow blue light excitation peaks, the white light LED has wide application prospect. However, at present, the problems of poor color rendering controllability, low target yield, large packaging volume, inconvenience for high-density packaging, use for micro led display and the like exist.
Disclosure of Invention
In order to overcome the defects, the invention provides a preparation method of a full-spectrum white light LED light-emitting device, which effectively solves the technical problems that the existing white light LED has poor color rendering index controllability and is not beneficial to high-density packaging and the like.
A preparation method of a full-spectrum white light LED light-emitting device comprises the following steps:
preparing a purple light LED chip;
sequentially preparing a red fluorescent powder film, a green fluorescent powder film and a blue fluorescent powder film;
respectively cutting the red phosphor film, the green phosphor film and the blue phosphor film according to the size of the light-emitting surface of the purple light LED chip to obtain red phosphor films, green phosphor films and blue phosphor films with corresponding sizes;
three purple light LED chips are taken as a light-emitting unit and are arranged according to a preset rule;
in a light emitting unit, a red phosphor film, a green phosphor film and a blue phosphor film are respectively stuck on the surfaces of corresponding purple light LED chips;
and carrying out RGB (red, green and blue) packaging on the light-emitting unit to obtain the full-spectrum white light LED light-emitting device.
Further preferably, the violet LED chip has a wavelength of less than 430nm, and is a transparent substrate co-planar two-electrode chip or a vertical structure chip.
Further preferably, in the process of manufacturing the violet LED chip, a silicon substrate or a sapphire substrate or a SiC substrate is used.
Further preferably, in the process of preparing the red phosphor film/the green phosphor film/the blue phosphor film, further comprising:
mixing red fluorescent powder/green fluorescent powder/blue fluorescent powder and silica gel according to the mass ratio of less than 2:1, and pressing to obtain a red fluorescent powder film/green fluorescent powder film/blue fluorescent powder film with the thickness of 10-200 mu m.
Further preferably, the red phosphor film, the green phosphor film and the blue phosphor film are respectively cut according to the size of the light emitting surface of the violet LED chip to obtain a red phosphor film, a green phosphor film and a blue phosphor film of corresponding sizes, further comprising:
according to the pattern of an electrode bonding pad in the purple light LED chip, a red fluorescent powder film, a green fluorescent powder film and a blue fluorescent powder film which are exposed out of the shape of the electrode bonding pad are obtained by a high-speed punching method.
The preparation method of the full-spectrum white light LED light-emitting device has the advantages that:
1. the white light LED light-emitting device prepared by the preparation method has the advantages that the CRI is improved to 95% from the existing 80%, the emitted white light is closer to the sunlight, the requirements of human illumination health and the requirements of certain special industries (such as military affairs, medicine, museums and the like) on the color rendering of a light source can be well met, and the application field is greatly expanded;
2. the content of the fluorescent powder in the red/green/blue fluorescent powder film and the thickness of the film are easy to control, the matched red/green/blue fluorescent powder film can be prepared according to the requirement and the wave band of the purple light LED chip, the CRI of the white light LED light-emitting device is improved, and meanwhile, the yield is greatly improved;
3. the size of the red/green/blue fluorescent powder film is matched and prepared according to the size of the purple light LED chip, so that the extra volume is not increased basically in the packaging process, and the high-density packaging and Micro LED display are facilitated.
Drawings
FIG. 1 is a schematic flow chart of a method for manufacturing a full spectrum white light LED light emitting device according to the present invention;
FIG. 2 is a schematic diagram of a purple LED chip according to an embodiment of the present invention;
FIG. 3 is a schematic view of a red/green/blue phosphor film corresponding to the purple LED chip shown in FIG. 2 according to the present invention;
fig. 4 is a schematic diagram of packaging using the violet LED chip and the red/green/blue phosphor film shown in fig. 2 and 3 according to the present invention.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will be made with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
Based on the problems of the white light LED preparation method in the prior art, the present invention provides a preparation method of a full spectrum white light LED light emitting device, as shown in fig. 1, the preparation method comprises:
s10, preparing a purple light LED chip;
s20 preparing a red phosphor film, a green phosphor film and a blue phosphor film in sequence;
s30, cutting the red phosphor film, the green phosphor film and the blue phosphor film respectively according to the size of the light-emitting surface of the purple light LED chip to obtain red phosphor films, green phosphor films and blue phosphor films with corresponding sizes;
s40, taking three purple light LED chips as a light emitting unit, and arranging the chips according to a preset rule;
s50 respectively sticking a red phosphor film, a green phosphor film and a blue phosphor film on the surface of the corresponding purple LED chip in a light emitting unit;
s60, RGB packaging is carried out on the light-emitting unit to obtain the full-spectrum white-light LED light-emitting device.
Specifically, the wavelength of the prepared purple light LED chip is less than 430nm (nanometer), and the prepared purple light LED chip can be a transparent substrate same-face double-electrode chip or a vertical structure chip. In the preparation process, a buffer layer, an n-type GaN layer, an active layer and a p-type GaN layer are sequentially grown on a growth substrate to obtain a GaN-based semiconductor multilayer structure; and then, preparing a P electrode and an N electrode on the semiconductor multilayer structure to obtain the purple light LED chip, wherein the used growth substrate can be a silicon substrate or a sapphire substrate or a SiC substrate.
After preparing the purple light LED chip, sequentially preparing a red fluorescent powder film, a green fluorescent powder film and a blue fluorescent powder film, specifically, mixing red fluorescent powder/green fluorescent powder/blue fluorescent powder and silica gel according to a mass ratio of less than 2:1, and according to the requirements of color areas, forming, baking and pressing to obtain the red fluorescent powder film/green fluorescent powder film/blue fluorescent powder film with the thickness of 10-200 microns. In the process, the CRI of the white light LED light-emitting device can be improved to a great extent due to the fact that the content of the fluorescent powder in the film and the thickness of the film are easy to control.
After preparing a red phosphor film, a green phosphor film and a blue phosphor film, the red phosphor film (which generates red under the excitation of violet light), the green phosphor film (which generates green under the excitation of violet light) and the blue phosphor film (which generates blue under the excitation of violet light) are respectively cut according to the size of the light emitting surface of the violet LED chip to obtain a red phosphor film, a green phosphor film and a blue phosphor film with corresponding sizes, and the red phosphor film, the green phosphor film and the blue phosphor film with the shapes of exposed electrode pads are obtained by a high-speed punching method according to the pattern of the electrode pads in the violet LED chip.
After arranging three ultraviolet chips in a light-emitting unit, the prepared red phosphor film, green phosphor film and blue phosphor film are attached to the surface of the violet LED chip by using a high-precision film attaching device, and fixing, wire bonding and RGB packaging operations (the violet LED chip with the phosphor film is fixed on a base by a heat-conducting or conductive adhesive, and wire bonding and plastic packaging operations are performed). In the process of RGB packaging, the N poles of the three purple light LED chips are shared to obtain the full-spectrum white light LED light-emitting device, so that the hit yield of a white area is improved, and high-density packaging is facilitated.
In an example, a purple light LED chip with a vertical structure is prepared as shown in fig. 2, and a red phosphor film, a green phosphor film and a blue phosphor film cut according to the structure of the purple light LED chip are matched with the light emitting side surface of the purple light LED chip as shown in fig. 3; then, the red phosphor film, the green phosphor film, and the blue phosphor film are sequentially attached to the surfaces of the corresponding violet LED chips, and RGB packaging is performed to obtain a white LED lighting device, as shown in fig. 4, where R denotes the violet LED chip to which the red phosphor film is attached, G denotes the violet LED chip to which the green phosphor film is attached, and B denotes the violet LED chip to which the blue phosphor film is attached, and in addition, as seen from the drawing, three violet LED chips are arranged in a line in one lighting unit.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (5)
1. A preparation method of a full-spectrum white light LED light-emitting device is characterized by comprising the following steps:
preparing a purple light LED chip;
sequentially preparing a red fluorescent powder film, a green fluorescent powder film and a blue fluorescent powder film;
respectively cutting the red phosphor film, the green phosphor film and the blue phosphor film according to the size of the light-emitting surface of the purple light LED chip to obtain red phosphor films, green phosphor films and blue phosphor films with corresponding sizes;
three purple light LED chips are taken as a light-emitting unit and are arranged according to a preset rule;
in a light emitting unit, a red phosphor film, a green phosphor film and a blue phosphor film are respectively stuck on the surfaces of corresponding purple light LED chips;
and carrying out RGB (red, green and blue) packaging on the light-emitting unit to obtain the full-spectrum white light LED light-emitting device.
2. The method of claim 1, wherein the violet LED chip has a wavelength of less than 430nm and is a transparent substrate co-planar two-electrode chip or a vertical structure chip.
3. The production method according to claim 1 or 2, wherein a silicon substrate or a sapphire substrate or a SiC substrate is used in the production of the violet LED chip.
4. The method of claim 1, wherein in the process of preparing the red phosphor film/the green phosphor film/the blue phosphor film, further comprising:
mixing red fluorescent powder/green fluorescent powder/blue fluorescent powder and silica gel according to the mass ratio of less than 2:1, and pressing to obtain a red fluorescent powder film/green fluorescent powder film/blue fluorescent powder film with the thickness of 10-200 mu m.
5. The method according to claim 1 or 4, wherein the red phosphor film, the green phosphor film and the blue phosphor film are cut to obtain red phosphor films, green phosphor films and blue phosphor films of corresponding sizes according to the size of the light emitting surface of the violet LED chip, respectively, and further comprising:
according to the pattern of an electrode bonding pad in the purple light LED chip, a red fluorescent powder film, a green fluorescent powder film and a blue fluorescent powder film which are exposed out of the shape of the electrode bonding pad are obtained by a high-speed punching method.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811247999.4A CN111106217A (en) | 2018-10-25 | 2018-10-25 | Preparation method of full-spectrum white light LED light-emitting device |
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| CN201811247999.4A CN111106217A (en) | 2018-10-25 | 2018-10-25 | Preparation method of full-spectrum white light LED light-emitting device |
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| CN111106217A true CN111106217A (en) | 2020-05-05 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012054492A (en) * | 2010-09-03 | 2012-03-15 | Nk Works Kk | Semiconductor ultraviolet light-emitting element |
| CN204648124U (en) * | 2015-04-08 | 2015-09-16 | 绍兴欧柏斯光电科技有限公司 | A kind of ultraviolet LED lamp |
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2018
- 2018-10-25 CN CN201811247999.4A patent/CN111106217A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012054492A (en) * | 2010-09-03 | 2012-03-15 | Nk Works Kk | Semiconductor ultraviolet light-emitting element |
| CN204648124U (en) * | 2015-04-08 | 2015-09-16 | 绍兴欧柏斯光电科技有限公司 | A kind of ultraviolet LED lamp |
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