CN111081559A - 裸芯接合装置和方法以及基板接合装置和方法 - Google Patents
裸芯接合装置和方法以及基板接合装置和方法 Download PDFInfo
- Publication number
- CN111081559A CN111081559A CN201911001477.0A CN201911001477A CN111081559A CN 111081559 A CN111081559 A CN 111081559A CN 201911001477 A CN201911001477 A CN 201911001477A CN 111081559 A CN111081559 A CN 111081559A
- Authority
- CN
- China
- Prior art keywords
- bonding
- substrate
- die
- plasma
- atmospheric plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 264
- 238000000034 method Methods 0.000 title claims abstract description 78
- 239000007788 liquid Substances 0.000 claims abstract description 73
- 230000008569 process Effects 0.000 claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910000679 solder Inorganic materials 0.000 claims abstract description 19
- 238000009832 plasma treatment Methods 0.000 claims abstract description 14
- 239000002313 adhesive film Substances 0.000 claims abstract description 12
- 238000009736 wetting Methods 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 238000005304 joining Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000007906 compression Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000005660 hydrophilic surface Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 238000007669 thermal treatment Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/031—Manufacture and pre-treatment of the bonding area preform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/033—Manufacturing methods by local deposition of the material of the bonding area
- H01L2224/0331—Manufacturing methods by local deposition of the material of the bonding area in liquid form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/038—Post-treatment of the bonding area
- H01L2224/03848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7501—Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7565—Means for transporting the components to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/80003—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/80004—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving a temporary auxiliary member not forming part of the bonding apparatus being a removable or sacrificial coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/80009—Pre-treatment of the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/80009—Pre-treatment of the bonding area
- H01L2224/8001—Cleaning the bonding area, e.g. oxide removal step, desmearing
- H01L2224/80013—Plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/80053—Bonding environment
- H01L2224/80091—Under pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/80053—Bonding environment
- H01L2224/80095—Temperature settings
- H01L2224/80096—Transient conditions
- H01L2224/80097—Heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/8012—Aligning
- H01L2224/80143—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/808—Bonding techniques
- H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/80895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/808—Bonding techniques
- H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/80896—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically insulating surfaces, e.g. oxide or nitride layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/80986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Die Bonding (AREA)
Abstract
公开了一种能够在不使用诸如粘附膜和焊料凸点的接合介质的情况下,将裸芯接合至基板或将多个基板接合在一起的裸芯接合装置、基板接合装置、裸芯接合方法以及基板接合方法。裸芯接合方法包括通过等离子体处理使裸芯的接合表面亲水化;通过将包括水的液体供应至基板的接合区域而在基板的接合区域上形成液膜;通过使裸芯与液膜接触而将裸芯预接合至基板;以及通过在一个或多个裸芯预接合至基板的状态下执行热处理而将一个或多个裸芯同时后接合至基板。
Description
相关技术的交叉引用
本申请要求申请号为10-2018-0125032、2018年10月19日提交韩国专利申请的权益和优先权,其全部内容通过引用合并于此。
技术领域
本文描述的发明构思的实施方案涉及一种裸芯接合(die bonding)装置、基板接合装置、裸芯接合方法以及基板接合方法,更具体地,涉及一种能够在不使用包括粘附膜和焊料凸点(solder bump)的接合介质的情况下,将裸芯接合至基板或将多个基板接合在一起的裸芯接合装置和方法、以及基板接合装置和方法。
背景技术
最近,因为提高半导体元件的集成度存在限制,所以用于在三维中堆叠半导体元件的3D封装技术引起了很多关注。代表性地,已经研究了通过使用硅通孔(TSV)将3D集成电路商业化的技术。3D半导体可以通过堆叠和接合TSV裸芯的裸芯接合工艺来制造。
图1至3为示出了相关技术中的裸芯接合工艺的视图。参照图1,作为接合介质的粘附膜3b和焊料凸点3c设置在TSV芯片3a的下接合表面上,以将TSV裸芯3接合至主晶圆1。包括粘附膜3b和焊料凸点3c的TSV裸芯3通过接合头10(bonding head)传送到主晶圆1上方,并对准在接合位置。然后,将TSV裸芯3放置在主晶圆1的上表面上或放置在接合至主晶圆1的TSV裸芯2的上表面上。
用于TSV裸芯3的接合工艺包括预接合工艺和后接合工艺。参照图2,首先通过将TSV裸芯3通过接合头10压靠在主晶圆1上并加热TSV裸芯3的预接合工艺将TSV裸芯3接合至主晶圆1。为了TSV裸芯3的预接合,接合头10包括用于将TSV裸芯3压靠在主晶圆1上并加热TSV裸芯3的装置。在TSV裸芯3预接合至主晶圆1后,执行通过在TSV裸芯3上在高温下执行热处理并按压TSV裸芯3来固化粘附膜3b和焊料凸点3c的后接合工艺,并在粘附膜3b和焊料凸点3c用作介质的情况下,通过热压缩将TSV裸芯3完全地接合至主晶圆1。
参照图3,TSV裸芯2、3和4通过逐个顺序地经受堆叠、预接合和后接合而逐个地接合至主晶圆1。在相关技术中的裸芯接合方法中,每次裸芯逐个接合时,裸芯必须通过使用接合头10来按压和加热,且必须执行通过高温热处理来热熔裸芯的后接合工艺。因此,执行后接合工艺所花费的时间与接合至主晶圆1的裸芯的数量成比例地增加。
此外,由于I/O间距(即TSV之间的间隙)的缩小,当执行高温/高负载接合以将堆叠的TSV裸芯完全接合时,焊料凸点可能会被扫掠(sweep),并与周围焊料凸点连接,从而引起短路。因此,很难使用接合介质。为了解决该问题,焊料凸点必须在尺寸上更小。然而,由于物理限制,这无法成为一个完备的对策。此外,相关技术中的裸芯接合方法存在的问题在于,随着主晶圆和TSV芯片做得更薄,在高温/高负载的后接合工艺中,在TSV芯片和主晶圆中引起诸如裂纹的损伤。
发明内容
本发明构思的实施方案提供一种能够在不使用诸如粘附膜和焊料凸点的接合介质的情况下,将裸芯接合至基板或将多个基板接合在一起的裸芯接合装置、基板接合装置、裸芯接合方法以及基板接合方法。
本发明构思的实施方案提供一种能够有效地将裸芯接合至基板或有效地将多个基板接合在一起并能够减少预接合和后接合裸芯或基板所花费的工艺时间的裸芯接合装置、基板接合装置、裸芯接合方法以及基板接合方法。
根据一示例性实施方案,用于将裸芯接合至基板的裸芯接合方法包括通过等离子体处理使待接合至所述基板的所述裸芯的接合表面亲水化;通过将包括水的液体供应所述基板的接合区域在待与所述裸芯接合的所述基板的所述接合区域上形成液膜;通过使所述裸芯与所述液膜接触、通过所述裸芯的所述亲水化接合表面和所述液膜之间的接合力将所述裸芯预接合至所述基板;和通过在一个或多个裸芯预接合至所述基板的状态下执行热处理将所述一个或多个裸芯同时后接合至所述基板。
在使接合表面亲水化中,可以通过大气等离子体设备使裸芯的接合表面亲水化。
裸芯接合方法还可包括通过接合头拾取支承在支承单元上的裸芯,并将裸芯传送到支承在接合台上的基板的上方。
在使接合表面亲水化中,可以在裸芯通过接合头从支承单元传送到接合台的情况下,通过设置在支承单元和接合台之间的大气等离子体设备使裸芯的接合表面亲水化。
在使接合表面亲水化中,可以在裸芯在大气等离子体设备的等离子体处理区间内移动的情况下,使裸芯的接合表面亲水化。
接合表面的亲水化可包括在大气等离子体设备的顶部形成包含亲水基团的等离子体区、以及传送裸芯以使裸芯的接合表面穿过大气等离子体设备的等离子体处理区间中的等离子体区。
接合表面的亲水化可包括检测裸芯是否位于等离子体处理区间内、当裸芯没有位于等离子体处理区间内时停止大气等离子体设备的操作、以及当裸芯位于等离子体处理区间内时操作大气等离子体设备以产生等离子体。
裸芯接合方法还可包括通过设置在支承单元和大气等离子体设备之间的清洁单元来清洁裸芯的接合表面。
液体可包括去离子水。
在形成液膜中,液膜可局部地形成在待与裸芯接合的基板的接合区域上。
在形成液膜中,可通过具有压电元件应用至其上的喷射型构图设备来形成液膜。
具有硅通孔(TSV)的多个裸芯可在亲水化后堆叠在基板上并预接合至基板。多个裸芯可在不使用通过包括粘附膜和焊料凸点的接合介质的热压缩接合的情况下预接合至基板。
根据示例性实施方案,用于将第二基板接合至第一基板的基板接合方法包括通过接合头拾取支承在支承单元上的所述第二基板并将所述第二基板传送到支承在接合台上的所述第一基板的上方;在通过所述接合头将所述第二基板从所述支承单元传送到所述接合台的情况下,通过设置在所述支承单元和所述接合台之间的大气等离子体设备使所述第二基板的下表面亲水化;通过将包括水的液体供应至所述第一基板的上表面在所述第一基板上形成液膜;通过使所述第二基板的所述下表面与所述液膜接触、通过所述第二基板的所述亲水化下表面和所述液膜之间的接合力将所述第二基板预接合至所述第一基板;和通过在所述第二基板预接合至所述第一基板的状态下执行热处理将所述第二基板后接合至所述第一基板。
第二基板的下表面的亲水化可包括在所述大气等离子体设备的顶部形成包含亲水基团的等离子体区;使所述第二基板的所述下表面穿过所述大气等离子体设备的等离子体处理区间中的所述等离子体区;检测所述第二基板是否位于所述等离子体处理区间内;当所述第二基板没有位于所述等离子体处理区间内时停止所述大气等离子体设备的操作;和当所述第二基板位于所述等离子体处理区间内时操作所述大气等离子体设备以产生等离子体。
根据一示例性实施方案,用于将裸芯接合至基板的裸芯接合装置包括支承单元,其支承所述裸芯;接合台,其支承所述基板;接合头,其设置在所述支承单元和所述接合台之间以便为可移动的,并拾取所述裸芯并将所述裸芯传送到所述基板上的接合区域;等离子体设备,其通过等离子体处理使待接合至所述基板的所述裸芯的接合表面亲水化;和润湿设备,其通过将包括水的液体供应至所述基板的所述接合区域在待与所述裸芯接合的所述基板的所述接合区域上形成液膜。
接合头可通过使裸芯的接合表面与液膜接触、通过裸芯的亲水化接合表面和液膜之间的接合力而将裸芯预接合至基板。
裸芯接合装置还可包括热处理单元,该热处理单元通过在一个或多个裸芯预接合至基板的状态下执行热处理而将一个或多个裸芯同时后接合至基板。
等离子体设备可包括设置在支承单元和接合台之间的大气等离子体设备。
裸芯接合方法还可包括清洁单元,其设置在支承单元和大气等离子体设备之间,并清洁通过接合头拾取的裸芯的接合表面。
大气等离子体设备可在大气等离子体设备的顶部形成包含亲水基团的等离子体区,且等离子体区可与裸芯的传送路径重叠。
裸芯接合装置还可包括检测器和控制器,检测器检测裸芯是否位于大气等离子体设备的等离子体处理区间内;控制器在裸芯没有位于等离子体处理区间内时停止大气等离子体设备的操作、并在裸芯位于等离子体处理区间内时操作大气等离子体设备以产生等离子体。
裸芯接合装置还可包括沿裸芯的传送方向移动大气等离子体设备的传送设备。
在裸芯在等离子体处理区间中移动的情况下,传送设备可以以等于或低于裸芯传送速度的速度移动大气等离子体设备。
润湿设备可在待与裸芯接合的基板的接合区域上局部地形成液膜。
裸芯接合装置还可包括沿裸芯传送方向设置的传送轨道,且润湿设备可沿传送轨道在接合台上方的区域和远离接合台的退回区域之间传送。
根据一示例性实施方案,用于将第二基板接合至第一基板的基板接合装置包括支承单元,其支承所述第二基板;接合台,其支承所述第一基板;接合头,其设置在所述支承单元和所述接合台之间以便为可移动的,并拾取所述第二基板并将所述第二基板传送到所述第一基板的上方;大气等离子体设备,其通过等离子体处理使所述第二基板的下表面亲水化;和润湿设备,其通过将包括水的液体供应至所述第一基板的上表面形成液膜。
接合头可通过使第二基板的下表面与液膜接触、通过第二基板的亲水化下表面和液膜之间的接合力而将第二基板预接合至第一基板。
基板接合装置还可包括热处理单元,其通过在第二基板预接合至第一基板的状态下执行热处理而将第二基板后接合至第一基板。
大气等离子体设备可在大气等离子体设备的顶部形成包含亲水基团的等离子体区,且等离子体区可与第二基板的传送路径重叠。
基板接合装置还可包括检测器和控制器,检测器检测第二基板是否位于大气等离子体设备的等离子体处理区间内;控制器在第二基板没有位于等离子体处理间隔内时停止大气等离子体设备的操作、并在第二基板位于等离子体处理区间内时操作大气等离子体设备以产生等离子体。
基板接合装置还可包括沿第二基板传送方向设置的传送轨道,且润湿设备可沿传送轨道在接合台上方的区域和远离接合台的退回区域之间传送。
附图说明
参照以下附图,从以下描述中,上述和其他目的及特征将变得显而易见,其中除非另有说明,否则在各个附图中,相同的附图标记表示相同部件,并且其中:
图1至图3为示出了相关技术中的裸芯接合工艺的视图;
图4为示出了根据本发明构思的实施方案的裸芯接合方法的流程图;
图5为示出了根据本发明构思的实施方案的裸芯接合装置的示意性侧视图;
图6为示出了根据本发明构思的实施方案的裸芯接合装置的示意性平面图;
图7为示出了构成根据本发明构思的实施方案的裸芯接合装置的支承单元、大气等离子体设备和接合台的布置的示意性平面图;
图8为示出了构成根据本发明构思的实施方案的裸芯接合装置的大气等离子体设备的示意性立体图;
图9为示出了构成根据本发明构思的实施方案的裸芯接合装置的大气等离子体设备的示意性截面图;
图10为示出了构成根据本发明构思的实施方案的裸芯接合装置的大气等离子体设备的操作的视图;
图11至图13为示出了构成根据本发明构思的实施方案的裸芯接合装置的润湿设备的操作的视图;
图14为示出了根据本发明构思的实施方案的具有预接合至其上的多个裸芯的基板的视图;
图15至图19为示出了根据本发明构思的实施方案的裸芯接合方法的示意性视图;
图20为示出了根据本发明构思的另一实施方案的裸芯接合装置的示意性侧视图;和
图21为示出了根据图20的实施方案的裸芯接合装置的操作的视图。
具体实施方式
以下,将参照附图更加详细地描述本发明构思的实施方式。然而,本发明构思可以以不同的形式呈现,并且不应该被构造成受限于本文所陈述的实施方式。相反,提供这些实施方案将使得本公开为彻底的和完整的,并将本发明构思的范围完全传达给本领域技术人员。在附图中,为了清楚说明,放大了部件的尺寸。
根据本发明构思的实施方案的裸芯接合方法包括在裸芯通过接合头传送至接合台的情况下,通过飞行型的大气等离子体处理使裸芯的下表面(接合表面)亲水化,以及通过将包括水的液体(例如,DI水)供应至支承在接合台上的基板的接合区域而形成液膜。当通过接合头使裸芯的亲水化接合表面与基板上的液膜接触时,裸芯通过裸芯的接合表面和液膜之间的接合力预接合至基板。在一个或多个裸芯预接合至基板后,裸芯通过高温/高压热处理而后接合至基板。
根据本发明构思的实施方案,基板和裸芯(例如,TSV裸芯)、或多个基板可在不使用诸如粘附膜和焊料凸点的接合介质的情况下接合在一起。因此,在制造具有精细I/O间距的半导体时,可防止诸如焊料凸点的扫掠和短路等的缺陷。此外,后接合工艺可在逐个基板(substrate-by-substrate)的基础上而不是逐个裸芯(die-by-die basis)的基础上执行。因此,可以减少执行接合工艺所花费的时间。
此外,根据本发明构思的实施方案,可在裸芯传送至接合台的情况下,通过飞行型的大气等离子体处理使裸芯的下表面(接合表面)亲水化,这可以减少执行用于裸芯的预接合的亲水化(大气等离子体处理)所花费的时间。此外,在裸芯的传送期间执行可在基板上形成液膜的润湿工艺,并因此可提高半导体生产率。
在本公开中,将裸芯接合至基板不仅包括将裸芯直接接合至基板的上表面,还包括将裸芯接合至预接合至基板的裸芯的上表面,或将裸芯接合至在基板上多层堆叠的并预接合至基板的裸芯中的最上面的裸芯的上表面。此外,通过将诸如DI水的液体喷射至基板形成液膜包括在基板的上表面上直接形成液膜,或在基板上堆叠的一个或多个裸芯的上表面上形成液膜。
图4为示出了根据本发明构思的实施方案的裸芯接合方法的流程图。参照图4,执行将半导体晶圆切割成裸芯的切割工艺,接合头拾取裸芯并向在其上支承基板(主晶圆)的接合台传送裸芯(S10)。
在裸芯通过接合头向接合台传送的情况下,裸芯的接合表面(下表面)通过大气等离子体而亲水化(S20)。在裸芯朝向接合台传送的情况下,裸芯的接合表面通过大气等离子体设备形成的亲水基团而亲水化。大气等离子体设备可以用例如大气氧/氩等离子体设备、或大气水蒸气等离子体设备等来实现。对于飞行型的大气等离子体处理,大气等离子体设备可在裸芯的传送路径上形成等离子体区。亲水基团可包括氢基团或羟基基团。
在裸芯传送至接合台的情况下,润湿设备移动到接合台上方,并将包括水的液体供应至支承在接合台上的基板的裸芯接合区域,以在基板的接合区域形成液膜(S30)。供应至基板上的接合区域的液体可以例如是去离子水(DIW)。在基板的接合区域上形成液膜后,润湿设备从接合台上方区域退回至待机位置,以允许接合头将裸芯放置在基板的接合区域上。
在基板的接合区域上形成液膜后,接合头移动到接合台上方并降下裸芯,使得裸芯的接合表面与基板上的液膜接触。当裸芯的接合表面与液膜接触时,即使裸芯未被按压或加热,裸芯也通过裸芯的亲水化接合表面与液膜之间的接合力(氢接合力)而预接合至基板(S40)。
接合头返回到切割的半导体晶圆上方的区域,拾取待接合的新裸芯,并重复上述工艺。在裸芯预接合至基板之后,具有预接合至其上的裸芯的基板被传送到热处理腔室中,并经受高温热处理(退火)以在逐个基板的基础上同时后接合裸芯(S50)。
图5为示出了根据本发明构思的实施方案的裸芯接合装置的示意性侧视图。图6为示出了根据本发明构思的实施方案的裸芯接合装置的示意性平面图。参照图5和图6,根据本发明构思的实施方案的裸芯接合装置100包括支承单元110、接合台120、接合头140、大气等离子体设备170、润湿设备180和热处理单元(未示出)。
支承单元110支承切割成裸芯的半导体晶圆W。接合台120支承基板MW。支承单元110和接合台120可包括分别用于支承半导体晶圆W和基板MW的卡盘。接合头140配置为拾取支承在支承单元110上的裸芯,并将裸芯传送至基板MW上的接合区域。
接合头140可在支承单元110上方的区域和接合台120上方的区域之间沿一对传送轨道132往复运动。传送轨道132可设置在由支承件134支承的框架130上。以下,从支承单元110朝向接合台120的方向称为第一方向X,在支承半导体晶圆W和基板MW的平面上垂直于第一方向X的方向称为第二方向Y,且与第一方向X和第二方向Y都垂直的垂直方向称为第三方向Z。
传送轨道132沿第一方向X布置。接合头140可通过滑架142在第一方向X上移动,该滑架142耦合至传送轨道132以便为可移动性的而。用于传送接合头140的通道136可形成在框架130中。接合头140可在由一对传送轨道132支承的状态下沿第一方向X稳定地移动,该传送轨道132设置在形成于框架130中的通道136的相对侧上。
接合头140可通过安装在滑架142中的升降单元140a在第三方向Z上提升或下降。接合头在其下端处包括接地板144。接合头140可以以诸如真空抽吸的方式从半导体晶圆W中拾取裸芯。当接合头140拾取裸芯时,安装在框架130上的检查单元150检查由接合头140拾取的裸芯的位置。检查单元150可基于视觉检查裸芯的位置。
安装在框架130上的清洁单元160清洁由接合头140拾取的裸芯的下表面(接合表面)。清洁单元160可设置在支承单元110和大气等离子体设备170之间。清洁单元160可以是在其中结合有空气喷射单元、真空抽吸单元和离子发生器的清洁设备。为了提高处理速度,清洁单元160在由接合头140拾取的裸芯移动的情况下执行清洁工艺。
图7为示出了构成根据本发明构思的实施方案的裸芯接合装置的支承单元、大气等离子体设备和接合台的布置的示意性平面图。图8为示出了构成根据本发明构思的实施方案的裸芯接合装置的大气等离子体设备的示意性立体图。图9为示出了构成根据本发明构思的实施方案的裸芯接合装置的大气等离子体设备的示意性截面图。
参照图7至图9,大气等离子体设备170可设置在裸芯D的传送路径DP上的支承单元110和接合头120之间。大气等离子体设备170执行大气等离子体处理以使由接合头140传送的裸芯D的接合表面亲水化。大气等离子体设备170在其顶部上形成包含亲水基团的等离子体区P。等离子体区P可形成为与裸芯D的传送路径DP重叠。
大气等离子体设备170可包括主体172、用于将工艺气体引入到主体172中的气体供应单元174、以及用于通过激发工艺气体而形成等离子体的RF功率施加单元176。主体172具有形成于其中的输送通道172a,通过该输送通道172a,从气体供应单元174供应的工艺气体向上输送。通过RF功率施加单元176,将RF电源176b供应的RF功率施加至由绝缘体178绝缘的电极176a。
在主体172的顶部处形成开口172b,以用于在等离子体区P中形成由RF功率激发的等离子体气体。开口172b可具有等于或大于裸芯D在第二方向Y上的宽度的长度,以允许在裸芯D在第二方向Y上的整个宽度上执行亲水化。
图10为示出了构成根据本发明构思的实施方案的裸芯接合装置的大气等离子体设备的操作的视图。参照图7至图10,检测器178a检测裸芯D是否位于大气等离子体设备170的等离子体处理区间P2内。当裸芯D位于等离子体处理区间P2之前的区间P1中或等离子体处理区间P2后的区间P3中时,控制器178b可停止大气等离子体设备170的操作,并且当裸芯D位于等离子体处理区间P2内时,控制器178b可操作大气等离子体设备170的RF电源176b和气体供应单元174,以产生等离子体。
当裸芯D进入等离子体处理区间P2的等离子体开始位置P21时,大气等离子体设备170的操作可通过控制器178b启动,并等离子体区P可形成在裸芯D的传送路径上。当裸芯D穿过等离子体处理区间P2的等离子体结束位置P22时,大气等离子体设备170的操作停止。
为了允许裸芯D的下表面(接合表面)穿过等离子体区P,裸芯D的传送高度和大气等离子体设备170的位置可确定为使得裸芯D和大气等离子体设备170之间的垂直间隙G小于暴露在大气等离子体设备170的顶部上的等离子体区P的厚度T。等离子体区P可形成为几毫米的厚度。在这种情况下,裸芯D和大气等离子体设备170之间的垂直间隙G可设置成小于等离子体区P的厚度T的几毫米。
等离子体开始位置P21和等离子体结束位置P22可设置成使得在接合头140中不会由等离子体引起电弧放电,且裸芯D的接合表面全部亲水化。如果等离子体处理区间P2被设置得太宽,则可能增加接合头140中发生电弧放电的风险,且大气等离子体设备170可能会运行比所需时间更长的时间,导致工艺成本增加。此外,等离子体处理间隔P2被设置得太窄,则裸芯D的接合表面的前角和后角可能不会部分地亲水化,或亲水状态可能不均匀。
在一实施方案中,等离子体开始位置P21可设置为接地板144的前端开始进入等离子体区P的位置,且等离子体结束位置P22可设置为接地板144的后端开始离开等离子体区P的位置。裸芯D在等离子体处理区间P2中的传送速度可设置为等于或低于裸芯D在等离子体处理区间P2之前和之后的传送速度。
在裸芯D的接合表面充分亲水化的情况下,即使没有降低裸芯D在等离子体处理区间P2中的传送速度,裸芯D也可在等离子体处理区间P2内没有速度变化的情况下传送以提高生产率。在裸芯D的接合表面没有获得充分的亲水效果的情况下,如果裸芯D在等离子体处理区间P2中的传送速度没有降低,则可降低接合头140在等离子体处理区间P2中的移动速度。在降低裸芯D的传送速度的情况下,接合头140的移动速度可以与等离子体处理区间P2同步地控制,且可在等离子体处理间隔P2之前的设定距离的位置处开始提前降低接合头140的传送速度。
图11至图13为示出了构成根据本发明构思的实施方案的裸芯接合装置的润湿设备的操作的视图。图11示出了润湿设备180位于退回区域中的状态,且图12示出了润湿设备180位于基板MW上的接合区域BA上方以在接合区域BA上执行润湿工艺的状态。参照图5、图6和图11至图13,润湿设备180通过将包括水的液体DIW供应至裸芯D将要接合至的基板MW上的接合区域BA,在接合区域BA上形成液膜(水膜)。在一实施方案中,润湿设备180可用喷射型构图设备来实现,该喷射型构图设备具有应用至其上的压电元件,并通过喷射DI水在接合区域BA上形成液膜。在裸芯D从支承单元110传送至接合台120的情况下,润湿设备180可执行在基板MW的接合区域BA上局部地形成液膜的润湿工艺。
润湿设备180可在接合台120上方的区域和远离接合台120的退回区域之间沿传送轨道132传送。润湿设备180可通过移动单元182沿第一方向X移动,该移动单元耦合至传送轨道132以便为可移动性的。润湿设备180可通过安装在移动单元182中的升降单元180a在第三方向Z上提升或下降。
在通过润湿设备180在基板MW的接合区域BA上形成液膜DL后,如图13所示,润湿设备180在基板MW的接合区域BA上执行润湿工艺后移动至退回区域,并且接合头140将裸芯D移动到基板MW的接合区域BA上。当接合头140在裸芯D与接合区域BA接触的状态下释放裸芯D时,裸芯D堆叠在基板MW上,并通过裸芯D的亲水化接合表面和液膜DL之间的接合力(氢接合力)预接合至基板MW。
再次参照图5和图6,为了对准裸芯D和基板MW,对准检查单元190基于视觉识别裸芯D和基板MW的位置,并确定基板MW上的接合区域BA。对准检查单元190可设置为以便沿传送轨道132在第一方向X上为可移动的,或可固定地安装在框架130上。润湿设备180的DIW施加位置、以及裸芯D和基板MW的对准位置可基于裸芯D和基板MW的位置来控制。接合台120可设置为以便沿沿第二方向Y设置的导轨122为可移动的。基板MW的位置能够通过接合台120在左/右方向(第二方向Y)上调节。
图14为示出了根据本发明构思的实施方案的具有预接合至其上的多个裸芯的基板的视图。在通过在多个裸芯D上顺序地并重复地执行上述工艺而将多个裸芯D预接合至基板MW后,具有预接合至其上的多个裸芯D的基板MW通过传送设备(未示出)传送到热处理单元(未示出)中。热处理单元在高压和高温气氛下、在具有预接合至其上的多个裸芯D的基板MW上执行热处理,以同时将多个裸芯D后接合至基板MW。在一实施方案中,为了通过有效地固化基板MW和裸芯D之间或多个裸芯D之间的接合界面来后接合裸芯D,热处理单元可在诸如氮气的惰性气体气氛下、在300℃to 350℃的温度和1.9MPa至2.5MPa的压力下执行热处理约一小时。
图15至图19为示出了根据本发明构思的实施方案的裸芯接合方法的示意性视图。首先,参照图15,通过在基板MW的上表面上形成等离子体区P,基板MW的上表面变成亲水表面PS1。通过等离子体处理而具有亲水表面PS1的基板MW可通过传送单元(未示出)传送至接合台120。在一实施方案中,基板MW可以是TSV基板,其包括硅基板14、穿过硅基板14形成的硅通孔(TSV)16、以及在除了TSV16之外形成在硅基板14的上表面和下表面上的绝缘膜12和18。
参照图16,通过执行将诸如DI水的液体供应至由等离子体亲水化的基板MW的接合区域的润湿工艺形成液膜DL。参照图17,裸芯D的下表面通过大气等离子体设备170变成亲水表面PS2,该裸芯D堆叠在基板MW的接合区域上。裸芯D可以是TSV裸芯,其包括硅基板24、穿过硅基板24形成的硅通孔(TSV)26、以及在除了TSV26之外形成在硅基板24的上表面和下表面上的绝缘膜22和28。
参照图15至图18,在裸芯D预接合至基板MW之后,通过在高温和高压气氛下在基板MW上执行热处理,形成在基板MW和裸芯D之间的界面处的亲水表面PS1、液膜DL和亲水表面PS2被加热和固化,因此裸芯D通过接合界面BL而完全地接合至基板MW。图19为示出了根据本发明构思的实施方案的多个裸芯堆叠在基板上并接合至基板的状态的视图。参照图19,三维半导体可通过顺序地将多个裸芯D堆叠并预接合至基板MW且然后在基板和多个裸芯D上同时执行后接合来制造。
根据本发明构思的实施方案,该裸芯接合方法可通过大气等离子体工艺和DIW喷射工艺、而不使用诸如粘附膜或焊料凸点的单独的接合介质的情况下来接合TSV裸芯。因此,该裸芯接合方法可解决由焊料凸点引起的扫掠、因与周围焊料凸点的连接导致的短路和电流中的缺陷的问题,从而提高半导体的质量,并且确保TSV裸芯的接合,而不考虑I/O间距的缩小。此外,该裸芯接合方法可通过大气等离子体处理、而不停止传送裸芯的情况下使裸芯的接合表面亲水化,并可在传送裸芯的情况下、同时执行将DI水滴到基板的接合区域的润湿工艺,从而在裸芯上快速地执行预接合工艺。
图20为示出了根据本发明构思的另一实施方案的裸芯接合装置的示意性侧视图。图21为示出了根据图20的实施方案的裸芯接合装置的操作的视图。参照图20和图21,裸芯接合装置100还可包括传送设备210,其沿设置在裸芯D的传送方向上(第一方向X上)的轨道200移动大气等离子体设备170。
在裸芯D在等离子体处理区间中移动的情况下,传送设备210可以以等于或低于裸芯D的传送速度V1(或接合头140的移动速度)的速度移动大气等离子体设备170。当接合头140的移动速度V1等于大气等离子体设备170的移动速度V2时,裸芯D和大气等离子体设备170之间的相对速度等于零,即使裸芯D在朝向接合台120移动,也可获得与在停止状态下对裸芯D执行等离子体处理相同的高亲水效果。
当大气等离子体设备170以低于裸芯D的移动速度V1的速度移动时,在快速传送裸芯D的情况下,可以获得与裸芯D以低于实际传送速度V1的速度V1-V2经过大气等离子体设备170的等离子体区P相同的亲水效果。因此,根据图20和图21的实施方案,在以高速传送裸芯D的情况下,通过大气等离子体设备170可以获得裸芯D的接合表面充分亲水化的效果。
诸如驱动电机、液压缸和气压缸等的各种驱动装置可用作用于接合台120、接合头140、润湿设备180、对准检查单元190和传送设备210等的电源。此外,在驱动方案中,不限于所示出的那些,可以使用诸如传送带、齿条/小齿轮、螺旋齿轮等的各种驱动机构。
尽管已经描述了用于将裸芯接合至基板的裸芯接合装置,但是裸芯接合装置可用作将多个基板接合在一起的基板接合装置。在将多个基板接合在一起的基板接合装置中,上部基板可由接合头140从支承单元110传送至支承在接合台120上的下部基板上方的区域。在上部基板从支承单元110传送至接合台120的情况下,上部基板的下表面可通过飞行型的大气等离子体设备170亲水化。由大气等离子体设备170形成的等离子体区优选地在第二方向上具有等于或大于上部基板的直径的长度。
根据本发明构思的实施方案的装置和方法可在不使用诸如粘附膜和焊料凸点的接合介质的情况下将裸芯接合至基板、或将多个基板接合在一起。
此外,根据本发明构思的实施方案的装置和方法可有效地将裸芯接合至基板、或有效地将多个基板接合在一起,并可减少预接合和后接合裸芯或基板所花费的工艺时间。
本发明构思的效果不限于上述的效果。本发明构思所属领域的技术人员从说明书和附图中可清楚地理解本文中没有提及的任何其他效果。
以上描述例证了本发明构思。此外,上述内容描述了本发明构思的示例性实施方案,并且本发明构思可以用于各种其他的组合、变化和环境中。也就是说,在不脱离本说明书中公开的本发明构思的范围、与书面公开的等同范围、和/或本领域技术人员的技术或知识范围的情况下,可以对本发明构思进行变化或修改。书面实施方案描述了实现本发明构思的技术精神的最佳状态,且可以进行本发明构思的特定应用和目的所需的各种改变。因此,本发明构思的详细描述并非旨在将发明构思限制在所公开的实施方案状态中。另外,应当理解的是,所附权利要求包括其他的实施方案。
虽然已经参照示例性实施方案描述了本发明构思,但对于本领域的技术人员来说将显而易见的是,在不脱离本发明构思的精神和范围的情况下,可以进行各种改变和修改。因此,应当理解的是,上述实施方案并非限制性的,而是说明性的。
Claims (31)
1.一种用于将裸芯接合至基板的裸芯接合方法,所述裸芯接合方法包括:
通过等离子体处理使待接合至所述基板的所述裸芯的接合表面亲水化;
通过将包括水的液体供应所述基板的接合区域在待与所述裸芯接合的所述基板的所述接合区域上形成液膜;
通过使所述裸芯与所述液膜接触、通过所述裸芯的所述亲水化接合表面和所述液膜之间的接合力将所述裸芯预接合至所述基板;和
通过在一个或多个裸芯预接合至所述基板的状态下执行热处理将所述一个或多个裸芯同时后接合至所述基板。
2.根据权利要求1所述的裸芯接合方法,其中,在使所述接合表面亲水化中,通过大气等离子体设备使所述裸芯的所述接合表面亲水化。
3.根据权利要求2所述的裸芯接合方法,所述裸芯接合方法还包括:
通过接合头拾取支承在支承单元上的所述裸芯,并将所述裸芯传送到支承在接合台上的所述基板的上方,
其中,在使所述接合表面亲水化中,在所述裸芯通过所述接合头从所述支承单元传送到所述接合台的情况下,通过设置在所述支承单元和所述接合台之间的所述大气等离子体设备使所述裸芯的所述接合表面亲水化。
4.根据权利要求3所述的裸芯接合方法,其中,在使所述接合表面亲水化中,在所述裸芯在所述大气等离子体设备的等离子体处理区间内移动的情况下,所述裸芯的所述接合表面亲水化。
5.根据权利要求3所述的裸芯接合方法,其中,所述接合表面的亲水化包括:
在所述大气等离子体设备的顶部形成包含亲水基团的等离子体区;和
传送所述裸芯以使所述裸芯的所述接合表面穿过所述大气等离子体设备的所述等离子体处理区间中的所述等离子体区。
6.根据权利要求4所述的裸芯接合方法,其中,所述接合表面的亲水化包括:
检测所述裸芯是否位于所述等离子体处理区间内;
当所述裸芯没有位于所述等离子体处理区间内时停止所述大气等离子体设备的操作;和
当所述裸芯位于所述等离子体处理区间内时操作所述大气等离子体设备以产生等离子体。
7.根据权利要求3所述的裸芯接合方法,所述裸芯接合方法还包括:
通过设置在所述支承单元和所述大气等离子体设备之间的清洁单元来清洁所述裸芯的所述接合表面。
8.根据权利要求1所述的裸芯接合方法,其中,所述液体包括去离子水。
9.根据权利要求1所述的裸芯接合方法,其中,在形成所述液膜中,所述液膜局部地形成在待与所述裸芯接合的所述基板的所述接合区域上。
10.根据权利要求1所述的裸芯接合方法,其中,在形成所述液膜中,所述液膜通过具有压电元件应用至其上的喷射型构图设备来形成。
11.根据权利要求1所述的裸芯接合方法,其中,具有硅通孔的多个裸芯被亲水化,并随后堆叠在所述基板上并预接合至所述基板,所述多个裸芯在不使用通过包括粘附膜和焊料凸点的接合介质的热压缩接合的情况下,预接合至所述基板。
12.一种用于将第二基板接合至第一基板的基板接合方法,所述基板接合方法包括:
通过接合头拾取支承在支承单元上的所述第二基板并将所述第二基板传送到支承在接合台上的所述第一基板的上方;
在通过所述接合头将所述第二基板从所述支承单元传送到所述接合台的情况下,通过设置在所述支承单元和所述接合台之间的大气等离子体设备使所述第二基板的下表面亲水化;
通过将包括水的液体供应至所述第一基板的上表面在所述第一基板上形成液膜;
通过使所述第二基板的所述下表面与所述液膜接触、通过所述第二基板的所述亲水化下表面和所述液膜之间的接合力将所述第二基板预接合至所述第一基板;和
通过在所述第二基板预接合至所述第一基板的状态下执行热处理将所述第二基板后接合至所述第一基板。
13.根据权利要求12所述的基板接合方法,其中,所述第二基板的所述下表面的亲水化包括:
在所述大气等离子体设备的顶部形成包含亲水基团的等离子体区;
使所述第二基板的所述下表面穿过所述大气等离子体设备的等离子体处理区间中的所述等离子体区;
检测所述第二基板是否位于所述等离子体处理区间内;
当所述第二基板没有位于所述等离子体处理区间内时停止所述大气等离子体设备的操作;和
当所述第二基板位于所述等离子体处理区间内时操作所述大气等离子体设备以产生等离子体。
14.一种用于将裸芯接合至基板的裸芯接合装置,所述裸芯接合装置包括:
支承单元,其配置为支承所述裸芯;
接合台,其配置为支承所述基板;
接合头,其设置在所述支承单元和所述接合台之间以便为可移动性的,并配置为拾取所述裸芯并将所述裸芯传送到所述基板上的接合区域;
等离子体设备,其配置为通过等离子体处理使待接合至所述基板的所述裸芯的接合表面亲水化;和
润湿设备,其配置为通过将包括水的液体供应至所述基板的所述接合区域在待与所述裸芯接合的所述基板的所述接合区域上形成液膜。
15.根据权利要求14所述的裸芯接合装置,其中,所述接合头通过使所述裸芯的所述接合表面与所述液膜接触、通过所述裸芯的所述亲水化接合表面和所述液膜之间的接合力而将所述裸芯预接合至所述基板。
16.根据权利要求14所述的裸芯接合装置,所述裸芯接合装置还包括:
热处理单元,其配置为通过在一个或多个裸芯预接合至所述基板的状态下执行热处理而将所述一个或多个裸芯同时后接合至所述基板。
17.根据权利要求14所述的裸芯接合装置,其中,所述等离子体设备包括设置在所述支承单元和所述接合台之间的大气等离子体设备。
18.根据权利要求17所述的裸芯接合装置,所述裸芯接合装置还包括:
清洁单元,其设置在所述支承单元和所述大气等离子体设备之间,并配置为清洁通过所述接合头拾取的所述裸芯的所述接合表面。
19.根据权利要求17所述的裸芯接合装置,其中,所述大气等离子体设备在所述大气等离子体设备的顶部形成包含亲水基团的等离子体区,且所述等离子体区与所述裸芯的传送路径重叠。
20.根据权利要求19所述的裸芯接合装置,所述裸芯接合装置还包括:
检测器,其配置为检测所述裸芯是否位于所述大气等离子体设备的等离子体处理区间内;和
控制器,其配置为在所述裸芯没有位于所述等离子体处理区间内时停止所述大气等离子体设备的操作,并配置为在所述裸芯位于所述等离子体处理区间内时操作所述大气等离子体设备以产生等离子体。
21.根据权利要求17所述的裸芯接合装置,所述裸芯接合装置还包括:
传送设备,其配置为沿所述裸芯的传送方向移动所述大气等离子体设备。
22.根据权利要求21所述的裸芯接合装置,其中,在所述裸芯在所述等离子体处理区间中移动的情况下,所述传送设备以等于或低于所述裸芯的传送速度的速度移动所述大气等离子体设备。
23.根据权利要求14所述的裸芯接合装置,其中,所述润湿设备在待与所述裸芯接合的所述基板的所述接合区域上局部地形成所述液膜。
24.根据权利要求14所述的裸芯接合装置,所述裸芯接合装置还包括:
传送轨道,其沿所述裸芯的传送方向设置,
其中,所述润湿设备沿所述传送轨道在所述接合台上方的区域和远离所述接合台的退回区域之间传送。
25.一种用于将第二基板接合至第一基板的基板接合装置,所述基板接合装置包括:
支承单元,其配置为支承所述第二基板;
接合台,其配置为支承所述第一基板;
接合头,其设置在所述支承单元和所述接合台之间以便为可移动的,并配置为拾取所述第二基板并将所述第二基板传送到所述第一基板的上方;
大气等离子体设备,其配置为通过等离子体处理使所述第二基板的下表面亲水化;和
润湿设备,其配置为通过将包括水的液体供应至所述第一基板的上表面形成液膜。
26.根据权利要求25所述的基板接合装置,其中,所述接合头通过使所述第二基板的下表面与所述液膜接触、通过所述第二基板的所述亲水化下表面和所述液膜之间的接合力而将所述第二基板预接合至所述第一基板。
27.根据权利要求26所述的基板接合装置,所述基板接合装置还包括:
热处理单元,其配置为通过在所述第二基板预接合至所述第一基板的状态下执行热处理而将所述第二基板后接合至所述第一基板。
28.根据权利要求27所述的基板接合装置,其中所述大气等离子体设备设置在所述支承单元和所述接合台之间。
29.根据权利要求28所述的基板接合装置,其中,所述大气等离子体设备在所述大气等离子体设备的所述顶部形成包含亲水基团的等离子体区,且所述等离子体区与所述第二基板的传送路径重叠。
30.根据权利要求29所述的基板接合装置,所述基板接合装置还包括:
检测器,其配置为检测所述第二基板是否位于所述大气等离子体设备的等离子体处理区间内;和
控制器,其配置为在所述第二基板没有位于所述等离子体处理间隔内时停止所述大气等离子体设备的操作,并配置为在所述第二基板位于所述等离子体处理区间内时操作所述大气等离子体设备以产生等离子体。
31.根据权利要求30所述的基板接合装置,所述基板接合装置还包括:
传送轨道,其沿所述第二基板的传送方向设置,
其中,所述润湿设备沿所述传送轨道在所述接合台上方的区域和远离所述接合台的退回区域之间传送。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2018-0125032 | 2018-10-19 | ||
KR1020180125032A KR102225956B1 (ko) | 2018-10-19 | 2018-10-19 | 다이 본딩 장치, 기판 본딩 장치, 다이 본딩 방법 및 기판 본딩 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111081559A true CN111081559A (zh) | 2020-04-28 |
CN111081559B CN111081559B (zh) | 2024-01-16 |
Family
ID=70279969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911001477.0A Active CN111081559B (zh) | 2018-10-19 | 2019-10-21 | 裸芯接合装置和方法以及基板接合装置和方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11600593B2 (zh) |
KR (1) | KR102225956B1 (zh) |
CN (1) | CN111081559B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114074429B (zh) * | 2020-08-12 | 2024-01-12 | 重庆康佳光电技术研究院有限公司 | 弱化结构的制造方法及制造系统 |
KR102552467B1 (ko) * | 2020-10-15 | 2023-07-05 | 세메스 주식회사 | 다이 표면 처리 장치 및 이를 구비하는 다이 본딩 시스템 |
Citations (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04174514A (ja) * | 1990-06-25 | 1992-06-22 | Fuji Electric Co Ltd | プラズマ処理装置 |
US5421953A (en) * | 1993-02-16 | 1995-06-06 | Nippondenso Co., Ltd. | Method and apparatus for direct bonding two bodies |
JP2005302319A (ja) * | 2004-04-06 | 2005-10-27 | Seiko Epson Corp | プラズマ処理装置およびプラズマ処理方法 |
CN1757101A (zh) * | 2003-02-28 | 2006-04-05 | 东京毅力科创株式会社 | 基板处理方法 |
US20060169672A1 (en) * | 2005-02-01 | 2006-08-03 | Seiko Epson Corporation | Film pattern forming method, film pattern, resist film, insulation film, circuit board, semiconductor device, surface elastic wave device, surface elastic wave oscillation device, electro-optic device, and electronic device |
US20060266792A1 (en) * | 2005-05-30 | 2006-11-30 | Youn-Sung Ko | Multi-chip die bonder and method |
WO2007043152A1 (ja) * | 2005-10-06 | 2007-04-19 | Fujitsu Limited | 半導体装置及びその製造方法 |
JP2007177258A (ja) * | 2005-12-26 | 2007-07-12 | Seiko Epson Corp | プラズマ処理装置 |
JP2007250444A (ja) * | 2006-03-17 | 2007-09-27 | Seiko Epson Corp | プラズマ装置 |
JP2008091641A (ja) * | 2006-10-02 | 2008-04-17 | Seiko Epson Corp | プラズマ処理装置 |
JP2008227108A (ja) * | 2007-03-12 | 2008-09-25 | Seiko Epson Corp | プラズマ処理装置 |
JP2009260206A (ja) * | 2008-03-26 | 2009-11-05 | Seiko Epson Corp | 放電プラズマ処理装置の表面加工方法、印加電極、及び、放電プラズマ処理装置 |
JP2010050426A (ja) * | 2008-08-22 | 2010-03-04 | Steco Ltd | 半導体チップボンディング方法及び半導体チップボンディング装置 |
US20130140713A1 (en) * | 2011-12-01 | 2013-06-06 | Taiwan Semiconductro Manufacturing Co., Ltd. | Interposer Wafer Bonding Method and Apparatus |
FR2987626A1 (fr) * | 2012-03-05 | 2013-09-06 | Commissariat Energie Atomique | Procede de collage direct utilisant une couche poreuse compressible |
JP2013182972A (ja) * | 2012-03-01 | 2013-09-12 | Tokyo Electron Ltd | 基板の接合方法及び半導体装置 |
US20130256911A1 (en) * | 2010-12-21 | 2013-10-03 | Korea Institute Of Machinery & Materials | Semiconductor chip stack package and manufacturing method thereof |
CN104160487A (zh) * | 2012-03-05 | 2014-11-19 | 富士胶片株式会社 | 图案形成方法 |
CN104160790A (zh) * | 2011-08-11 | 2014-11-19 | 韩国机械研究院 | 等离子体发生器、用于等离子体发生器的旋转电极的制造方法、执行基板的等离子体处理的方法、以及采用等离子体形成具有混合结构的薄膜的方法 |
US20150096651A1 (en) * | 2012-05-23 | 2015-04-09 | Panasonic Intellectual Property Management Co., Ltd. | Auxiliary joining agent and method for producing the same |
CN104603923A (zh) * | 2012-05-07 | 2015-05-06 | 晟碟半导体(上海)有限公司 | 具有独立驱动的半导体裸芯层叠装置 |
US20150129135A1 (en) * | 2013-11-13 | 2015-05-14 | Semes Co., Ltd. | Bonding head and die bonding apparatus having the same |
US20150189204A1 (en) * | 2013-12-27 | 2015-07-02 | Optiz, Inc. | Semiconductor Device On Cover Substrate And Method Of Making Same |
CN104769713A (zh) * | 2013-01-09 | 2015-07-08 | 晟碟半导体(上海)有限公司 | 包括用于嵌入和/或隔开半导体裸芯的独立膜层的半导体器件 |
US20160372305A1 (en) * | 2015-06-17 | 2016-12-22 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
US20170200711A1 (en) * | 2016-01-13 | 2017-07-13 | Ziptronix, Inc. | Systems and methods for efficient transfer of semiconductor elements |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006294571A (ja) | 2005-04-14 | 2006-10-26 | Uinzu:Kk | 大気圧プラズマ処理装置及び大気圧プラズマ処理方法 |
JP2006339363A (ja) | 2005-06-01 | 2006-12-14 | Bondtech Inc | 表面活性化方法および表面活性化装置 |
JP4697066B2 (ja) * | 2006-06-22 | 2011-06-08 | パナソニック株式会社 | 電極接合方法及び部品実装装置 |
JP6382769B2 (ja) | 2014-08-07 | 2018-08-29 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
-
2018
- 2018-10-19 KR KR1020180125032A patent/KR102225956B1/ko active IP Right Grant
-
2019
- 2019-10-21 US US16/658,469 patent/US11600593B2/en active Active
- 2019-10-21 CN CN201911001477.0A patent/CN111081559B/zh active Active
Patent Citations (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04174514A (ja) * | 1990-06-25 | 1992-06-22 | Fuji Electric Co Ltd | プラズマ処理装置 |
US5421953A (en) * | 1993-02-16 | 1995-06-06 | Nippondenso Co., Ltd. | Method and apparatus for direct bonding two bodies |
CN1757101A (zh) * | 2003-02-28 | 2006-04-05 | 东京毅力科创株式会社 | 基板处理方法 |
JP2005302319A (ja) * | 2004-04-06 | 2005-10-27 | Seiko Epson Corp | プラズマ処理装置およびプラズマ処理方法 |
US20060169672A1 (en) * | 2005-02-01 | 2006-08-03 | Seiko Epson Corporation | Film pattern forming method, film pattern, resist film, insulation film, circuit board, semiconductor device, surface elastic wave device, surface elastic wave oscillation device, electro-optic device, and electronic device |
US20060266792A1 (en) * | 2005-05-30 | 2006-11-30 | Youn-Sung Ko | Multi-chip die bonder and method |
WO2007043152A1 (ja) * | 2005-10-06 | 2007-04-19 | Fujitsu Limited | 半導体装置及びその製造方法 |
JP2007177258A (ja) * | 2005-12-26 | 2007-07-12 | Seiko Epson Corp | プラズマ処理装置 |
JP2007250444A (ja) * | 2006-03-17 | 2007-09-27 | Seiko Epson Corp | プラズマ装置 |
JP2008091641A (ja) * | 2006-10-02 | 2008-04-17 | Seiko Epson Corp | プラズマ処理装置 |
JP2008227108A (ja) * | 2007-03-12 | 2008-09-25 | Seiko Epson Corp | プラズマ処理装置 |
JP2009260206A (ja) * | 2008-03-26 | 2009-11-05 | Seiko Epson Corp | 放電プラズマ処理装置の表面加工方法、印加電極、及び、放電プラズマ処理装置 |
JP2010050426A (ja) * | 2008-08-22 | 2010-03-04 | Steco Ltd | 半導体チップボンディング方法及び半導体チップボンディング装置 |
US20130256911A1 (en) * | 2010-12-21 | 2013-10-03 | Korea Institute Of Machinery & Materials | Semiconductor chip stack package and manufacturing method thereof |
CN104160790A (zh) * | 2011-08-11 | 2014-11-19 | 韩国机械研究院 | 等离子体发生器、用于等离子体发生器的旋转电极的制造方法、执行基板的等离子体处理的方法、以及采用等离子体形成具有混合结构的薄膜的方法 |
US20130140713A1 (en) * | 2011-12-01 | 2013-06-06 | Taiwan Semiconductro Manufacturing Co., Ltd. | Interposer Wafer Bonding Method and Apparatus |
JP2013182972A (ja) * | 2012-03-01 | 2013-09-12 | Tokyo Electron Ltd | 基板の接合方法及び半導体装置 |
FR2987626A1 (fr) * | 2012-03-05 | 2013-09-06 | Commissariat Energie Atomique | Procede de collage direct utilisant une couche poreuse compressible |
CN104160487A (zh) * | 2012-03-05 | 2014-11-19 | 富士胶片株式会社 | 图案形成方法 |
CN104603923A (zh) * | 2012-05-07 | 2015-05-06 | 晟碟半导体(上海)有限公司 | 具有独立驱动的半导体裸芯层叠装置 |
US20150096651A1 (en) * | 2012-05-23 | 2015-04-09 | Panasonic Intellectual Property Management Co., Ltd. | Auxiliary joining agent and method for producing the same |
CN104769713A (zh) * | 2013-01-09 | 2015-07-08 | 晟碟半导体(上海)有限公司 | 包括用于嵌入和/或隔开半导体裸芯的独立膜层的半导体器件 |
US20150129135A1 (en) * | 2013-11-13 | 2015-05-14 | Semes Co., Ltd. | Bonding head and die bonding apparatus having the same |
US20150189204A1 (en) * | 2013-12-27 | 2015-07-02 | Optiz, Inc. | Semiconductor Device On Cover Substrate And Method Of Making Same |
US20160372305A1 (en) * | 2015-06-17 | 2016-12-22 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
US20170200711A1 (en) * | 2016-01-13 | 2017-07-13 | Ziptronix, Inc. | Systems and methods for efficient transfer of semiconductor elements |
Also Published As
Publication number | Publication date |
---|---|
US11600593B2 (en) | 2023-03-07 |
CN111081559B (zh) | 2024-01-16 |
KR20200045579A (ko) | 2020-05-06 |
KR102225956B1 (ko) | 2021-03-12 |
US20200126948A1 (en) | 2020-04-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102103811B1 (ko) | 칩 온 웨이퍼 접합 방법 및 접합 장치, 및 칩과 웨이퍼를 포함하는 구조체 | |
KR100979472B1 (ko) | 본딩 장치 및 본딩 방법 | |
JP2008218474A5 (zh) | ||
CN111081559B (zh) | 裸芯接合装置和方法以及基板接合装置和方法 | |
KR102081703B1 (ko) | 본딩 장치 및 본딩 방법 | |
CN111199892B (zh) | 键合装置及键合方法 | |
CN111696876B (zh) | 键合装置以及键合方法 | |
KR102201889B1 (ko) | 본딩 장치 및 본딩 방법 | |
KR102211818B1 (ko) | 다이 또는 기판의 본딩 장치 및 본딩 방법 | |
KR102242197B1 (ko) | 본딩 장치 및 본딩 방법 | |
KR102630226B1 (ko) | 하이브리드 본딩 장치 및 이를 이용하는 하이브리드 본딩 방법 | |
TWI715296B (zh) | 接合裝置及接合方法 | |
KR102178872B1 (ko) | 다이 또는 기판의 본딩 장치, 본딩 방법, 액적 토출 헤드 구동 장치 및 방법 | |
JP4369528B2 (ja) | ボンディング装置及び方法 | |
KR20200052080A (ko) | 본딩 장치 및 본딩 방법 | |
KR102306763B1 (ko) | 친수성 계측 장치, 친수성 계측 방법, 본딩 장치 및 본딩 방법 | |
JP7268931B2 (ja) | 接合方法、基板接合装置および基板接合システム | |
CN114582749A (zh) | 清洁和处置微电子装置的方法以及相关工装和组件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |