CN104603923A - 具有独立驱动的半导体裸芯层叠装置 - Google Patents

具有独立驱动的半导体裸芯层叠装置 Download PDF

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Publication number
CN104603923A
CN104603923A CN201280073634.9A CN201280073634A CN104603923A CN 104603923 A CN104603923 A CN 104603923A CN 201280073634 A CN201280073634 A CN 201280073634A CN 104603923 A CN104603923 A CN 104603923A
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Prior art keywords
substrate
stacked
bare chip
semiconductor bare
panel
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CN201280073634.9A
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CN104603923B (zh
Inventor
顾伟
吕忠
俞志明
邱进添
邰恩勇
倪敏
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SanDisk SemiConductor Shanghai Co Ltd
SanDisk Information Technology Shanghai Co Ltd
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SanDisk SemiConductor Shanghai Co Ltd
SanDisk Information Technology Shanghai Co Ltd
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Abstract

公开了一种用于将半导体裸芯(220)层叠在基板面板(200)的基板上的层叠装置(230)和方法。层叠装置(230)包括层叠单元(234、236、238、240)，它们彼此独立操作，从而成行或成列的半导体裸芯(220)可同时独立地层叠到成行或成列的基板上。

Description

具有独立驱动的半导体裸芯层叠装置
技术领域
本发明的实施方式涉及半导体装置。
背景技术
对便携式消费电子产品需求的迅猛增长推进了对高容量存储装置的需求。如闪存卡的非易失性半导体存储装置开始被广泛地使用以满足对数字信息存储和交换的日益增长的需求。这类存储装置的便携性、多功能性和朴实耐用的设计，连同其高可靠性和大容量，已使得他们可理想地用于多种多样的电子设备，包括例如数码相机、数字音乐播放器、视频游戏控制器、PDA和移动电话。
虽然已知多种多样的封装结构，但闪存卡通常可被制为系统级封装(SiP)或多裸芯模块(MCM)，其中多个裸芯以堆叠式结构安装在衬底上。现有技术的图1和图2中示出了常规半导体封装20(无模塑料)的边视图。典型的封装包括安装至衬底26的多个半导体裸芯22、24。尽管未在图1和图2中示出，该半导体裸芯可在裸芯的上表面上形成有裸芯焊盘。衬底26可形成有夹在上导电层和下导电层之间的电绝缘核。该上和/或下导电层可被刻蚀以形成包括电导线和接触垫(contact pad)的电导图案。焊线30被焊接在半导体裸芯22、24的裸芯焊盘和衬底26的接触垫之间，以将半导体裸芯电连接至衬底。衬底上的该电导线因此提供裸芯和主设备之间的电通路。一旦裸芯和衬底之间形成电连接，该组件就典型地被包封在模塑料中以提供保护性封装。
已知的是使用偏移式结构(现有技术的图1)或堆叠式结构(现有技术的图2)将半导体裸芯互相叠放起来。在图1的偏移式结构中，各裸芯有偏移地堆叠，以使得下方的下一个裸芯的焊盘露出。该偏移需要衬底上的较大覆盖区(占用区)，而衬底上的空间非常宝贵。在图2的堆叠式结构中，两个或更多个半导体裸芯以一个直接位于另一个之上的方式堆叠，从而相较于偏移式结构，在衬底上的占用区较小。然而，在堆叠式结构中，必须在相邻的半导体裸芯之间提供用于焊线30的空间。除了焊线30本身的高度之外，还必须在焊线上方留出额外的空间，因为一个裸芯的焊线30与上方的下一个裸芯的焊线如接触可能导致电短路。如图2所示，因此已知的是提供电介质隔离层34来为焊线30提供足够的空间以将焊线30焊接至下方裸芯24上的裸芯焊盘。
一旦裸芯从晶片上被切下，各裸芯被拾取且放置在基板的面板上各自的位置上，在未固化的裸芯附接粘合剂层的上部。在裸芯连接在给定的基板位置之前，使用目视检查以对准裸芯与各基板位置。如果在特定实例没有检查到恰当的对准，或者发现基板位置的某些其它问题，则跳过该基板位置且将裸芯设置在下一个基板。图3是裸芯42已经固定到各基板位置44上后基板面板40的开始两列的现有技术图。如图所示，已经跳过一个基板位置44a且该跳过的位置44a没有容纳半导体裸芯42。
在裸芯最初设在基板位置时，裸芯附接粘合剂是B-阶段粘合剂，是粘的以保持住裸芯，但是尚未完全固化。裸芯附接粘合剂可在层叠工艺中固化，在此过程中，将压力和热施加到裸芯附接粘合剂。热由其上支撑基板面板的工作站施加到基板的下侧。
压力由层叠头施加到裸芯的上表面，现有技术图4和5中示出其示例。层叠头50是包括一行层叠垫52的单体件。垫52在行中的数量可匹配一列基板面板l40中的基板位置44的数量。在所示的示例中，有四个基板位置44和四个层叠垫52。例如，如现有技术图6所示，层叠头50需要调整为与支撑基板面板40的工作站成平行关系。如果该步骤跳过或没有恰当执行，则层叠头可能相对于基板面板倾斜一定的角度。对于单体结构的层叠头50，当层叠头的一个边缘在基板面板的一个边缘接触裸芯时，层叠面板的相对边缘不可能在基板面板的相对边缘适当接触裸芯。这样，单体式层叠头50可能对在基板面板40的一个边缘上的裸芯42施加的力太大，而对在基板面板40的相对边缘上的裸芯42施加的力不足。
现在参见现有技术图7，因各种原因也可能发生某些裸芯42在面板40的表面之上延伸高出其它的裸芯42。例如，在图7中，裸芯42a高于其它的裸芯42，并且裸芯42b较低。在此情况下，单体式层叠头50在裸芯42a上施加的力大于在其它的裸芯42上施加的力，并且在裸芯42b上施加的力小于其它裸芯42上施加的力。
现在参见现有技术图8和9，其中列中的每个基板位置已经容纳半导体裸芯，可控制层叠头施加在每个裸芯上的力。例如，可希望在每个半导体裸芯42上施加30N的力F1。因此，层叠头可在该示例中施加一相反的力F2，30N x4＝120N。然而，如上所述，可能发生列中的基板位置44a不容纳半导体裸芯42的情况，如图9所示。层叠头50仍然施加向下的力120N。然而，在此情况下，仅由三个半导体裸芯42承受该力。这样，该列中每个裸芯42上的力F3就不希望地增加到了120/3＝40N。
附图说明
图1和2是现有技术的省略模塑料的两个常规半导体封装体设计的边视图。
图3是现有技术的半导体裸芯安装到基板示例的一部分基板面板的俯视图。
图4是现有技术的用于层叠半导体裸芯到基板面板的单体式层叠头的立体图。
图5是现有技术的包括层叠垫的单体式层叠头的仰视图。
图6是现有技术的单体式层叠头不与基板面板平行的边视图。
图7是现有技术的单体式层叠头试图层叠不同厚度裸芯到基板面板的边视图。
图8和9是现有技术的用常规的单体式层叠头给半导体裸芯施加力的边视图。
图10是示出根据本公开的半导体装置组装的流程图。
图11是更加详细示出根据本公开实施方式的裸芯附接步骤的流程图。
图12是根据本公开实施方式的基板面板的俯视图。
图13是来自图12的基板面板的一列基板的俯视图。
图14是来自图13的一列基板的一个基板的俯视图。
图15是来自与图13一样的基板面板的一列基板的俯视图，并且进一步包括半导体裸芯。
图16是根据本公开实施方式用于独立层叠一列半导体裸芯到基板面板上的层叠装置的立体图。
图17是根据本公开实施方式的层叠装置的层叠气缸的截面图。
图18是根据本公开实施方式用于控制层叠装置操作的控制器的模块图。
图19是根据本公开实施方式层叠不同厚度的半导体裸芯到基板面板上的层叠装置的边视图。
图20是示出根据本公开实施方式由层叠装置在一列半导体裸芯上施加力的边视图。
图21是根据本公开实施方式的其中层叠单元不与基板面板平行的将半导体裸芯层叠在基板面板上的层叠装置的边视图。
图22是根据本公开形成的半导体装置的边视图。
具体实施方式
现在参考图10至22描述实施方式，其涉及用于独立层叠一列半导体裸芯到基板面板上的层叠装置。应理解，本发明可以以很多不同的形式实施，而不应解释为限于这里阐明的实施方式。相反，提供这些实施方式以使本公开清楚和完整，并且向本领域的技术人员充分地传达本发明。当然，本发明旨在覆盖这些实施方式的选择性方案、修改和等同物，而这些包括在所附权利要求限定的本发明的范围和精神内。此外，在本发明的下面的详细描述中，阐述了大量的具体细节以便提供对本发明的更全面的理解。然而，本领域的普通技术人员清楚，本发明可在没有这样具体细节的情况下实施。
这里可能使用的“顶部”和“底部”以及“上部”和“下部”的术语仅为了便利和示例性说明的目的，而不意味着限制本发明的描述，因为所引用项可在位置上互换。
现在参考图10和11的流程图以及图12-22的俯视图、边视图和立体图说明本技术方案的实施方式。图12是包括多个基板202的基板面板200的俯视图。面板200允许同时将基板202批量处理成多个半导体装置260(图22)，以实现规模经济效益。基板面板201上基板202的行数(沿着基板面板的长度的x方向上)和列数(在基板面板的宽度上的y方向上)仅作为示例示出，并且基板202的行和/或列数可在其他实施方式中变化。
一单列基板202示出在图13中(相对于图12旋转90度)，并且单个基板202的示例示出在图14的俯视图中。基板202可为各种不同的裸芯载体介质，包括印刷电路板(PCB)、引线框或卷带式自动接合(TAB)带。如果基板202是PCB，则基板可由各种导电层形成，其每一个由电介质核或芯分开。基板202中的层数可在选择性实施方式中变化。
再参考图10的流程图，在步骤100中，基板202被钻孔，以在基板202中限定贯通过孔215。过孔215(某些在图14中编了号)提供为在基板202的不同层之间传输信号。所示的过孔215的数量和位置仅为示例，并且基板可比图示包括更多的过孔205，它们可在与图中所示的位置不同的位置。
接下来，导电图案可在步骤104中形成在核或芯(一个或多个)上提供的一个或多个导电层中。顶部和底部导电层中的导电图案可通过不同的方法形成，例如包括丝网印刷和光刻。导电图案的示例示出在图14的顶层中。应理解，一个或多个其余的导电层也可具有这里限定的导电图案。
基板202中的导电图案(一个或多个)可包括电迹线216和接触垫或焊盘218(某些在图中编了号)。迹线216和接触垫218仅以示例的方式示出，并且基板202可包括比图中所示更多的迹线和/或接触垫，它们可以以与图中所示的设置不同的方式设置。其它的结构也可提供在导电图案中，例如，测试半导体装置260运行的探针。
基板面板200还可包括在基板202轮廓外的目视检测标记206和/或208。标记206/208的形状提供为使它们可由如下说明的目视检测相机识别。然而，标记206和/或208的形状仅为示例，并且可在其它实施方式中为其它形状。目视检测标记206、208的使用将在下面进行更加详细地说明。
再一次参考图10，基板202接下来可在步骤108中在自动光学检测(AOI)中被检测。一旦检测，在步骤112中，焊接掩模层可被施加到基板202的上和/或下表面。焊接掩模层(一个或多个)由聚合物形成，其为导电图案的铜迹线提供保护层且防止焊料流过暴露的接触垫和探针，从而防止短路。
在形成阻焊膜层后，顶层和底层上的导电图案的暴露部分(例如包括接触垫218)可在步骤114中以已知的电解电镀、无电镀或薄膜沉积工艺镀以Ni/Au层等。
在步骤116中，基板202可在自动检测工艺(AVI)中被检验和测试，并且在步骤120中，基板可经受最终目视检测(FVI)以检查电操作，以及检查污染、划痕和变色。
假如基板202通过检测，一个或多个半导体裸芯接下来可在步骤122中被附接到基板202的顶表面。裸芯附接步骤122的进一步细节分别参考图11的流程图以及图15、16和17的俯视图、立体图和截面边视图进行说明。在步骤142中，裸芯附接粘合剂层被施加到基板的表面。裸芯附接粘合剂可施加为B-阶段粘合剂；粘而且半固态但尚未固化到完全固态的C-阶段。可采用的裸芯附接粘合剂的示例由汉高中国(Henkel China)制造，其总部设在中国上海，品牌名称为Ablestik。
在步骤144中，取放机器人(未示出)运载半导体裸芯220到基板面板200，并且如图15的基板列所示，将其设置在基板202上的B-阶段裸芯附接粘合剂上。取放机器人包括一个或多个定位相机，其检测相邻于每个基板202的目视检测标记206、208的位置。这使得裸芯220能够在基板上在x和y方向上适当定位。
如果目视定位相机不能检测标记206和/或208，或者对于特定实例的基板202检测到某些其它问题，取放机器人跳过该实例(这里不设置裸芯220)，并且运动到下一个基板202实例。因此，在图15的示例中，基板202的实例202a没有容纳裸芯220，而基板列中的其余实例容纳了裸芯220。
在裸芯220被放置在基板202上后，热和压力被施加到裸芯220和基板202以固化裸芯附接粘合剂到C-阶段固态。一旦裸芯附接粘合剂固化到其C-阶段，裸芯220牢固地附接到基板202。基板面板200支撑在包括加热元件的工作站(未示出)上。在步骤146中，加热基板以加热裸芯附接粘合剂。
结合步骤146，执行层叠步骤148，其中压力被施加到裸芯的顶表面以固化粘合剂，同时将裸芯压向基板。根据本技术方案，压力可通过采用包括独立层叠头的层叠装置同时独立地被施加到多个实例裸芯和基板。
现在，将参考图16至18说明根据本技术方案的层叠装置230的示例。图16示出了基板面板200的一个示例，其具有一列四个基板202实例。在该实施方式中，层叠装置230包括四个层叠单元234、236、238和240，其每一个匹配该列中基板202和裸芯220的每个实例的位置。应理解，一列基板可包括多于或少于四个的基板，并且层叠装置230可包括对应数量的更多或更少的层叠单元。在其它实施方式中，层叠装置230上的层叠单元的数量可少于面板200的一列基板中基板202的数量。
层叠单元234、236、238和240的每个可彼此相同。这样，下面描述的层叠单元234应用到层叠装置230中其它层叠单元的每一个。在所示的实施方式中，层叠单元234可由气动执行器驱动。然而，应注意，其它执行器也可用于层叠单元234的执行部分以在裸芯220的顶表面上施加压力。这样的另外的执行器包括电磁线圈(solenoid)和其它电磁电动机。
如果采用气动装置，层叠单元234可包括驱动气缸244，其包括进气端口246和排气端口248。第一软管274(图18)可连接到进气端口246，其中第一软管选择性地连接到增压气源272。第二软管276可类似地连接到排气端口248，其中第二软管选择性地连接到增压气源(其可为源272或不同的源)。
图17是驱动气缸244的内部的截面图。增压气体可供应到进气端口246，而排气端口248向环境压力敞开。在此情况下，活塞270向下驱动。活塞270进而连接到驱动轴272，驱动轴272与活塞270一起向下驱动。如下所说明，驱动轴272连接到臂252，臂252在单个裸芯220上施加向下的力。提供到进气端口246的增压气体的量控制了由臂施加到裸芯220上的力。向下的力可被保持预定的时间段，例如五秒，尽管向下的力在其它实施方式中可保持比此更长或更短的时间段。
在预定的时间段过后，进气端口246的压力可打开至环境压力，并且压力被施加到排气端口248。在此情况下，活塞270和驱动轴272可向上运动，从裸芯220去除臂。应理解，驱动气缸244在其它实施方式中可采用其它气动方案和部件，例如包括气动电磁阀(solenoid valve)。
再一次参见图16，驱动轴272从驱动气缸244延伸且连接到臂252。臂252在具有层叠头256与其固定的基部254终止。基部254和层叠头256与面板200上使用的裸芯220的足印或占用区匹配。如上所述，臂252、基部254和层叠头256在施加的增压气体到进气端口246时向下运动，从而层叠头256在其上设置有层叠垫的裸芯220上施加向下的力。在实施方式中，层叠头256可由顺从材料形成，例如但不限于橡胶。层叠头256在其它实施方式中可由其它材料形成，并且通常可宽泛地定义为位于与半导体裸芯直接接触以向半导体裸芯施加力的部件。
层叠单元234、236、238、240的每一个安装到支撑，例如支撑260。支撑260可安装为在基板面板的x-y平面中平移，以便允许层叠单元与面板200上的一列半导体裸芯220一起对准。可安装支撑260的平移台为此目的是已知的。下面更加详细地说明支撑260的平移以将每个层叠单元的层叠头与一列裸芯220对准。
图18是示出层叠单元234、236、238、240操作的模块图。控制器270可为用于对层叠单元234、236、238、240的每一个的闭环反馈系统的实施彼此独立地提供控制信号和接收反馈信号。控制器270通过每个层叠单元的线路274和276与气源272连通以设定由源272提供的气体压力到气动气缸244。层叠单元234、236、238、240的每一个彼此独立操作，并且控制器270可对不同的层叠单元提供不同的压力和/或从一个或多个气源272提供不同的时间长度。
特别是，层叠单元234、236、238、240的每一个包括压力传感器282(图18中示意性地示出)，用于感应由层叠头256施加在半导体裸芯220上的压力。该信息可传送至控制器270每秒几次(尽管在其它实施方式中压力读数可更频繁或更不频繁地传送)。
如现有技术表明的，可能某些半导体裸芯比其它的厚，或者比其它的延伸在基板面板之上更高。例如，图19示出了裸芯220a，其延伸为高于另一个裸芯220b。由于各层叠单元上的层叠头256下降且在一列裸芯中的裸芯上施加压力，较高的裸芯220a上的层叠头256a将比较低的裸芯220b上的层叠头256b更快地达到所希望的目标力。目标力例如可为30N，尽管在其它的实施方式中目标力可更高或更低。
每个层叠单元上的压力传感器280相对于其它层叠单元独立地测量压力。每个压力传感器280将压力度数返回到控制器270，并且当给定的压力传感器显示已经达到目标力时，控制器可停止该层叠单元的层叠头进一步向下运动。因此，在图19的示例中，具有层叠头256a的层叠单元236可在具有层叠头256b的层叠单元238之前停止其向下的运动。这样，控制器270彼此独立地控制各层叠单元，从而每个层叠头256在其相关的裸芯220上提供相同的目标力，既使裸芯在面板200的表面之上延伸不同的高度。
如上所述，基板面板可包括目视检测标记206和/或208。一个或多个层叠单元234、236、238、240还可包括相机282(图18中示意性示出)，用于使层叠单元234、236、238、240的列与基板面板200的x-y平面中的裸芯220的列对准。如上所述，支撑260可安装为在面板200的x-y平面中平移。相机282可检测支撑260和层叠单元234、236、238、240相对于目视检测标记206和/或208的位置，并且重新定位支撑260和层叠单元。这允许每个层叠单元的层叠头256在裸芯列中的各裸芯220上一起对准。
裸芯列中的裸芯220之间的间隔通常是固定的和已知的。这样，层叠单元可具有它们彼此相对固定的间隔，并且在支撑260上一起运动，从而当一个层叠头256在裸芯220上对准时，其余的层叠头256类似地在它们各自的裸芯220对准。应理解，每个层叠单元234、236、238、240可被安装在支撑260上，从而在其它实施方式中其每一个能相对于其它层叠臂独立地x-y定位。
尽管图18示意地示出单个相机282，但是在其它实施方式中一个或多个层叠单元可包括多于一个的相机以有助于层叠单元234、236、238、240对基板面板200上的目视检测标记206的对准。
再一次参见图11中的步骤148，目标压力由各层叠头256施加到裸芯220的每一个以预定的时间段，例如五秒(该时间在其它实施方式中可为更长或更短)。由于目标压力在一个裸芯220上相对于其它的裸芯220可更快获得，施加到一列中各裸芯的压力可不同时全部结束。然而，一旦目标压力已经施加到一列中的每个裸芯预定的时间段，则每个裸芯220和基板202之间的裸芯附接粘合剂可完全固化到C-阶段粘合剂。此时，裸芯附接粘合剂相对不能溶解和熔化，并且裸芯牢固地层叠在基板上。
在已经完成整列裸芯在面板200上的层叠后，面板可行进，从而裸芯的下一列可定位在层叠单元下。下一列的裸芯220然后在层叠头的热和压力下被层叠，如上所述。如图16所示，以允许基板面板行进的方式，基板面板可支撑在轨道264和266之间，从而一列裸芯220的每一个可顺次定位在层叠单元之下。
尽管图16示出了对应于裸芯220的整个列的单行的层叠单元234、236、238、240，但是应理解，多于一行的层叠单元可提供为使多列裸芯220同时被层叠。而且，不是使层叠单元对应于一列半导体裸芯，层叠单元可对应于一行半导体裸芯。在该实施方式中，层叠单元可层叠一行裸芯220，然后平移到下一行，并且如此直到面板200的所有行已经被层叠。还可预期行中的层叠单元的数量少于面板200上一列中的基板的数量。在该实施方式中，层叠单元234、236、238、240和/或基板面板200可配备为在x和y方向二者上平移。
如上所述，层叠装置230的特征是一列裸芯中的各裸芯220可彼此独立地层叠在它们的各基板上。这允许一列中的每个裸芯220的层叠工艺在目标压力下和彼此独立的期间得到控制。
如上所述，因为各种原因可能发生一列基板中的一个或多个基板不容纳半导体裸芯。常规而言，单体式层叠头，这导致该列中的半导体裸芯承受比希望值更大的力。然而，由于本技术方案的可独立操作的层叠头，该问题得以解决。图20示出了一列中的基板之一不容纳裸芯220的示例。然而，由于层叠头256的每一个被独立地控制，其每一个可施加希望的目标力Fl，遇到由基板202和裸芯220产生的相等和相反力F1。在图20的示例中，层叠头256a不施加任何力。一列中的所有裸芯通常可接收相同的目标力Fl。然而，如果希望，本技术方案允许不同的力可控地施加到一列中的不同裸芯220。
还如背景部分中所述，单体式层叠头通常要求配准步骤，其中单体式头平行于基板面板定向。采用本技术方案可省略该步骤，因为，既使层叠装置230不平行，每个头256也被独立地控制。因此，顶多单一层叠头可在其各自裸芯上存在略微的倾斜，如图21所示。一个层叠头256的错位不影响任何其它层叠头256的对准。由于层叠头256由顺从材料形成，层叠头可相对于裸芯220放平，甚至在层叠单元略微相对于半导体裸芯220成角度的情况下，如图21所示。
上面已经描述了用于将半导体裸芯220层叠在基板202上的层叠装置230。层叠装置230也可用于将第一半导体裸芯220层叠在第二半导体裸芯220上，并且将所有的半导体裸芯220彼此层叠成裸芯堆叠。因此，层叠装置例如可用于将单一裸芯层叠到基板，将两个裸芯彼此层叠并与基板层叠，四个裸芯彼此层叠并与基板层叠、八个裸芯彼此层叠并与基板层叠等。在示例中，这些裸芯可为闪存裸芯。控制器裸芯还可采用层叠装置230被进一步层叠到基板或到裸芯堆叠。控制器裸芯例如可为ASIC。
在如上所述的裸芯附接或连接和层叠后，在步骤126中，一个或多个半导体裸芯可被引线键合到基板202。在步骤128中，半导体装置260可经历等离子体清洗工艺以去除粒子且改善表面可湿润性，以允许用于保护半导体裸芯和焊线的模塑料的更好流动性。
在裸芯220已经安装且引线键合到基板202后，在步骤132中，裸芯220和焊线(wire bonds)可被包装在模塑料248中(图22)。在实施方式中，该模塑料可使用已知的例如来自日本的Nitto Denko Corp.(日本日东电工)的环氧树脂、由转移模塑法或由FFT(自由流动薄)压制成型工艺形成。
在包封后，在步骤134，可将半导体装置260从面板200分割出以形成如图22所示的最终的半导体装置260。在实施方式中，装置260可为闪存装置，尽管装置260在其它实施方式中可为其它半导体封装体。
可通过各种切割方法中的任意一种来分割每个装置260，包括锯切、水射流切割、激光切割、水导激光切割、干介质切割和金刚石涂层线切割。虽然直线切口将限定大致矩形或方形形状的装置260，但应理解，在本发明的其它实施方式中，装置260可具有除矩形和方形之外的形状。
一旦切割出各装置260，可在步骤138中对各装置进行测试以确定封装体是否正常工作。如本领域已知的，这类测试可包括电测试、老化测试以及其它测试。在步骤140中，各装置可以可选地被包封在盖子(lid)内。
总之，在一个实施方式中，本技术方案涉及用于将半导体裸芯层叠到基板面板上的基板上的层叠装置，该层叠装置包括：多个层叠单元，该多个层叠单元中的每个层叠单元包括执行器和层叠头，该执行器促动该层叠头在半导体裸芯上施加力，其中该多个层叠单元的所述层叠头被彼此独立地促动。
在另一个实施方式中，本技术方案涉及用于将半导体裸芯层叠到基板面板上的基板上的层叠装置，该层叠装置包括：一行层叠单元，该行层叠单元中的每个层叠单元包括执行器和层叠头，该执行器促动该层叠头以在半导体裸芯上施加预定力以预定的时间段，其中第一层叠头对第一半导体裸芯施加的该预定力和/或该预定时间与第二层叠头对第二半导体裸芯施加的预定力和/或预定时间被独立地控制。
在其它实施方式中，本技术方案涉及半导体装置的面板，包括：第一、第二和第三基板实例，该第一和第二基板实例沿着面板上的一行基板彼此相邻，并且该第一和第三基板实例沿着面板上的一列基板彼此相邻；第一、第二和第三半导体裸芯被分别层叠在第一、第二和第三基板实例上，该第一半导体裸芯以力和时间的至少一个被层叠，该力和时间与层叠该第二半导体裸芯和该第三半导体裸芯的力和时间是独立的。
在另一个实施方式中，本技术方案涉及从半导体装置的面板分割的半导体装置，该半导体装置包括：基板；和半导体裸芯，该半导体裸芯被层叠在该基板上的力与第二半导体裸芯被层叠在第二基板上的力独立地控制，该第二半导体裸芯和该第二基板设置为相邻于该面板上一行中的基板和半导体裸芯，并且该半导体裸芯被层叠在该基板上的力与第三半导体裸芯被层叠在第三基板上的力被独立地控制，该第三半导体裸芯和该第三基板设置为相邻于该面板上一列中的基板和半导体裸芯。
本发明的前述详细说明是出于例示和说明的目的而进行的。无意于穷举或将本发明限制于在此公开的精确形式。基于上述教导，可能存在许多修改和变形。所描述的实施方式是为了更好地解释本发明的原理及其实际应用从而使本领域其它技术人员能够最好地以各种实施方式利用本发明而选择的，并且可根据具体使用而设想出适用的各种修改。本发明的范围由随附于此的权利要求书限定。

Claims (20)

1.一种用于将半导体裸芯层叠到基板面板上的基板上的层叠装置，该层叠装置包括：
多个层叠单元，该多个层叠单元中的每个层叠单元包括执行器和层叠头，该执行器促动该层叠头在半导体裸芯上施加力，其中该多个层叠单元的该层叠头被彼此独立地促动。
2.如权利要求1所述的层叠装置，还包括控制器，该控制器彼此独立地控制各该层叠单元。
3.如权利要求1所述的层叠装置，其中该执行器是气动执行器。
4.如权利要求1所述的层叠装置，其中该层叠头的每一个可控制为在在半导体裸芯上施加力，第一层叠头在第一半导体裸芯上施加的力与第二层叠头在第二半导体裸芯上施加的力被独立地控制。
5.如权利要求1所述的层叠装置，其中该层叠头的每一个可控制为在半导体裸芯上施加力以预定的时间段，第一层叠头在第一半导体裸芯上施加力的第一时间段与第二层叠头在第二半导体裸芯上施加力的第二时间段被独立地控制。
6.如权利要求1所述的层叠装置，其中该基板面板包括沿着该基板面板的长度取向的多行基板和跨越该基板面板的宽度取向的多列基板，该多个层叠单元沿着一列基板取向。
7.如权利要求6所述的层叠装置，其中不是列上的所有基板都容放半导体裸芯，该层叠装置中的每个层叠头在该列基板中的该半导体裸芯上施加预定目标的力。
8.如权利要求1所述的层叠装置，其中该基板面板包括沿着该基板面板的长度取向的多行基板和跨越该基板面板的宽度取向的多列基板，该多个层叠单元沿着一行基板取向。
9.一种用于将半导体裸芯层叠在基板面板上的基板上的层叠装置，该层叠装置包括：
一行层叠单元，该行层叠单元中的每个层叠单元包括执行器和层叠头，该执行器促动该层叠头在半导体裸芯上施加预定的力以预定的时间段，其中第一层叠头对第一半导体裸芯施加的该预定力和/或该预定时间与第二层叠头对第二半导体裸芯施加的该预定力和/或预定时间被独立地控制。
10.如权利要求9所述的层叠装置，还包括在每个层叠单元上的压力传感器，第一层叠单元上的第一压力传感器独立于第二层叠单元上的第二压力传感器测量该第一层叠头施加在半导体裸芯上的压力。
11.如权利要求9所述的层叠装置，其中该基板面板包括目视检测标记，该行层叠单元包括至少一个相机，用于识别该目视检测标记以将该行层叠单元定位到多个半导体裸芯。
12.如权利要求9所述的层叠装置，其中该行层叠单元安装为平行于该基板面板的x-y平面平移。
13.如权利要求12所述的层叠装置，其中该行层叠单元安装为一起平移。
14.一种半导体装置的面板，包括：
第一、第二和第三基板实例，该第一基板实例和第二基板实例沿着该面板上的一行基板彼此相邻，并且该第一基板实例和第三基板实例沿着该面板上的一列基板彼此相邻；以及
第一、第二和第三半导体裸芯被分别层叠在该第一、第二和第三基板实例上，该第一半导体裸芯以力和时间的至少一个被层叠，该力和时间独立于第二半导体裸芯和第三半导体裸芯被层叠的力和时间。
15.如权利要求14所述的层叠装置，其中该第一、第二和第三半导体裸芯通过焊线被电连接到该第一、第二和第三基板实例。
16.如权利要求14所述的层叠装置，其中该第一、第二和第三半导体裸芯被用模塑料包封在该面板上。
17.一种从半导体装置的面板分割出的半导体装置，该半导体装置包括：
基板；和
半导体裸芯，该半导体裸芯被以一力层叠在该基板上，该力与将第二半导体裸芯层叠在第二基板上的力被独立控制，该第二半导体裸芯和第二基板设置为相邻于该面板上一行中的该基板和该半导体裸芯，并且该半导体裸芯被以一力层叠在该基板上，该力与将第三半导体裸芯层叠在第三基板上的力被独立地控制，该第三半导体裸芯和该第三基板设置为相邻于该面板上一列中的该基板和半导体裸芯。
18.如权利要求17所述的层叠装置，其中该半导体裸芯通过焊线被电连接到该基板。
19.如权利要求17所述的层叠装置，其中该半导体裸芯被用模塑料包封在该基板上。
20.如权利要求17所述的层叠装置，其中该半导体装置是闪存装置。
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