CN111066152B - 碳化硅半导体装置及其制造方法 - Google Patents

碳化硅半导体装置及其制造方法 Download PDF

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Publication number
CN111066152B
CN111066152B CN201880055698.3A CN201880055698A CN111066152B CN 111066152 B CN111066152 B CN 111066152B CN 201880055698 A CN201880055698 A CN 201880055698A CN 111066152 B CN111066152 B CN 111066152B
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layer
region
silicon carbide
current spreading
conductivity type
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CN111066152A (zh
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箕谷周平
梶爱子
海老原康裕
永冈达司
青井佐智子
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H10D62/054—Forming charge compensation regions, e.g. superjunctions by high energy implantations in bulk semiconductor bodies, e.g. forming pillars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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CN201880055698.3A 2017-08-31 2018-08-29 碳化硅半导体装置及其制造方法 Active CN111066152B (zh)

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JP2017166882A JP6729523B2 (ja) 2017-08-31 2017-08-31 炭化珪素半導体装置およびその製造方法
JP2017-166882 2017-08-31
PCT/JP2018/032004 WO2019044921A1 (ja) 2017-08-31 2018-08-29 炭化珪素半導体装置およびその製造方法

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CN111066152B true CN111066152B (zh) 2023-07-21

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JP7180402B2 (ja) 2019-01-21 2022-11-30 株式会社デンソー 半導体装置
JP7379880B2 (ja) * 2019-06-21 2023-11-15 富士電機株式会社 半導体装置
JP7425943B2 (ja) * 2019-12-12 2024-02-01 株式会社デンソー 炭化珪素半導体装置
JP7443924B2 (ja) 2020-05-14 2024-03-06 富士電機株式会社 半導体装置
JP7532921B2 (ja) 2020-06-09 2024-08-14 富士電機株式会社 半導体装置
JP7458257B2 (ja) 2020-07-09 2024-03-29 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP2022021181A (ja) 2020-07-21 2022-02-02 株式会社デンソー 半導体装置
KR102812224B1 (ko) * 2021-03-03 2025-05-22 주식회사 디비하이텍 에피택셜층의 유효 두께 차등 구조를 가지는 슈퍼정션 반도체 소자 및 제조방법
JP7476132B2 (ja) * 2021-03-23 2024-04-30 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP7521553B2 (ja) * 2021-03-24 2024-07-24 株式会社デンソー 炭化珪素半導体装置およびそれを用いたインバータ回路、炭化珪素半導体装置の製造方法
WO2022202936A1 (ja) * 2021-03-24 2022-09-29 株式会社デンソー 炭化珪素半導体装置およびそれを用いたインバータ回路、炭化珪素半導体装置の製造方法
JP7582061B2 (ja) * 2021-05-14 2024-11-13 株式会社デンソー 半導体装置
JP7593225B2 (ja) * 2021-05-14 2024-12-03 株式会社デンソー 炭化珪素半導体装置
JP7593235B2 (ja) * 2021-05-28 2024-12-03 株式会社デンソー 半導体装置
JP7619168B2 (ja) * 2021-06-01 2025-01-22 株式会社デンソー 半導体装置
JP7673513B2 (ja) * 2021-06-15 2025-05-09 株式会社デンソー 半導体装置
JP7651403B2 (ja) 2021-08-05 2025-03-26 株式会社デンソー 電界効果トランジスタとその製造方法
JP7687171B2 (ja) * 2021-09-28 2025-06-03 株式会社デンソー 半導体装置およびその製造方法
JP7704007B2 (ja) * 2021-11-09 2025-07-08 株式会社デンソー 半導体装置の製造方法
JP7683466B2 (ja) * 2021-11-17 2025-05-27 株式会社デンソー 半導体装置およびその製造方法
JP7717010B2 (ja) * 2022-03-08 2025-08-01 株式会社デンソー 半導体装置
JP7757235B2 (ja) * 2022-05-13 2025-10-21 株式会社デンソー 半導体装置とその製造方法
JP2024025440A (ja) * 2022-08-12 2024-02-26 株式会社デンソー 炭化珪素半導体装置
WO2025052689A1 (ja) * 2023-09-04 2025-03-13 株式会社 東芝 半導体装置
CN118800806B (zh) * 2024-09-11 2025-01-10 陕西半导体先导技术中心有限公司 一种带有突出p阱的umosfet器件及其制备方法

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JP5252813B2 (ja) * 2007-03-15 2013-07-31 株式会社豊田中央研究所 半導体装置の製造方法
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JP5728992B2 (ja) 2011-02-11 2015-06-03 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5812029B2 (ja) * 2012-06-13 2015-11-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法
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JP6237408B2 (ja) 2014-03-28 2017-11-29 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法

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JP2019046908A (ja) 2019-03-22
WO2019044921A1 (ja) 2019-03-07
CN111066152A (zh) 2020-04-24
US11063145B2 (en) 2021-07-13
JP6729523B2 (ja) 2020-07-22
US20200168732A1 (en) 2020-05-28

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