CN111033628B - 具有分布式扇区的行冗余 - Google Patents

具有分布式扇区的行冗余 Download PDF

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Publication number
CN111033628B
CN111033628B CN201880052387.1A CN201880052387A CN111033628B CN 111033628 B CN111033628 B CN 111033628B CN 201880052387 A CN201880052387 A CN 201880052387A CN 111033628 B CN111033628 B CN 111033628B
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China
Prior art keywords
sectors
erase
memory
sector
physical
Prior art date
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CN201880052387.1A
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English (en)
Chinese (zh)
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CN111033628A (zh
Inventor
科比·达农
约拉姆·比特森
乌里·科特利茨基
阿里耶·费尔德曼
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Infineon Technology Co ltd
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Cypress Semiconductor Corp
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Publication of CN111033628A publication Critical patent/CN111033628A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G11C29/4401—Indication or identification of errors, e.g. for repair for self repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/806—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout by reducing size of decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/814—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for optimized yield
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
CN201880052387.1A 2017-08-29 2018-08-03 具有分布式扇区的行冗余 Active CN111033628B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762551314P 2017-08-29 2017-08-29
US62/551,314 2017-08-29
US15/850,779 US10141065B1 (en) 2017-08-29 2017-12-21 Row redundancy with distributed sectors
US15/850,779 2017-12-21
PCT/US2018/045223 WO2019045951A1 (en) 2017-08-29 2018-08-03 RANK REDUNDANCY WITH DISTRIBUTED SECTORS

Publications (2)

Publication Number Publication Date
CN111033628A CN111033628A (zh) 2020-04-17
CN111033628B true CN111033628B (zh) 2022-01-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880052387.1A Active CN111033628B (zh) 2017-08-29 2018-08-03 具有分布式扇区的行冗余

Country Status (6)

Country Link
US (1) US10141065B1 (enExample)
JP (2) JP6768173B1 (enExample)
CN (1) CN111033628B (enExample)
DE (1) DE112018004795T5 (enExample)
TW (1) TWI676177B (enExample)
WO (1) WO2019045951A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI802971B (zh) * 2021-08-23 2023-05-21 旺宏電子股份有限公司 記憶體晶胞，記憶體裝置之製造方法及其操作方法
US12069857B2 (en) 2021-08-23 2024-08-20 Macronix International Co., Ltd. Memory cell, memory device manufacturing method and memory device operation method thereof

Family Cites Families (24)

* Cited by examiner, † Cited by third party
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WO1996036050A1 (en) 1995-05-12 1996-11-14 Advanced Micro Devices, Inc. Sector architecture for flash memory device
US6081878A (en) * 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US5881003A (en) * 1997-07-16 1999-03-09 International Business Machines Corporation Method of making a memory device fault tolerant using a variable domain redundancy replacement configuration
US6553510B1 (en) * 1999-09-02 2003-04-22 Micron Technology, Inc. Memory device including redundancy routine for correcting random errors
US6397313B1 (en) * 1999-10-19 2002-05-28 Advanced Micro Devices, Inc. Redundant dual bank architecture for a simultaneous operation flash memory
JP2001291395A (ja) * 2000-04-10 2001-10-19 Hitachi Ltd 半導体記憶装置
US6496425B1 (en) * 2000-08-21 2002-12-17 Micron Technology, Inc Multiple bit line column redundancy
KR100375998B1 (ko) 2000-11-17 2003-03-15 (주)실리콘세븐 자동 테스트 및 리페어 기능을 내장하는 반도체 메모리장치 및 그 방법
ITRM20010516A1 (it) 2001-08-29 2003-02-28 Micron Technology Inc Architettura a schiera di memorie flash.
US7093156B1 (en) 2002-05-13 2006-08-15 Virage Logic Corp. Embedded test and repair scheme and interface for compiling a memory assembly with redundancy implementation
EP1365419B1 (en) 2002-05-21 2008-12-31 STMicroelectronics S.r.l. Self-repair method for non volatile memory device with erasing/programming failure detection, and non volatile memory device therefor
US6891752B1 (en) * 2002-07-31 2005-05-10 Advanced Micro Devices System and method for erase voltage control during multiple sector erase of a flash memory device
JP2004103143A (ja) * 2002-09-11 2004-04-02 Fujitsu Ltd 冗長構成を有するメモリ回路
WO2005081260A1 (ja) 2004-02-20 2005-09-01 Spansion Llc 半導体記憶装置および半導体記憶装置の冗長方法
US8339865B2 (en) 2007-11-01 2012-12-25 Spansion Israel Ltd Non binary flash array architecture and method of operation
US7613042B2 (en) 2007-11-05 2009-11-03 Spansion Llc Decoding system capable of reducing sector select area overhead for flash memory
US7609569B2 (en) 2007-11-19 2009-10-27 International Busines Machines Corporation System and method for implementing row redundancy with reduced access time and reduced device area
US7590001B2 (en) * 2007-12-18 2009-09-15 Saifun Semiconductors Ltd. Flash memory with optimized write sector spares
US8730729B2 (en) * 2009-10-15 2014-05-20 Densbits Technologies Ltd. Systems and methods for averaging error rates in non-volatile devices and storage systems
CN103631671B (zh) * 2013-11-19 2016-05-04 无锡众志和达数据计算股份有限公司 一种ssd存储器的数据保护方法及控制器
TWI545580B (zh) 2014-01-07 2016-08-11 群聯電子股份有限公司 隨機數產生方法、記憶體儲存裝置及控制電路
TWI529721B (zh) 2014-05-06 2016-04-11 群聯電子股份有限公司 記憶體儲存裝置、記憶體控制電路單元及電源供應方法
KR20170047447A (ko) 2015-10-22 2017-05-08 에스케이하이닉스 주식회사 반도체 메모리 장치
US9741421B1 (en) 2016-04-05 2017-08-22 Micron Technology, Inc. Refresh circuitry

Also Published As

Publication number Publication date
TWI676177B (zh) 2019-11-01
JP7157785B2 (ja) 2022-10-20
JP6768173B1 (ja) 2020-10-14
WO2019045951A1 (en) 2019-03-07
DE112018004795T5 (de) 2020-06-18
US10141065B1 (en) 2018-11-27
JP2020532036A (ja) 2020-11-05
CN111033628A (zh) 2020-04-17
JP2021007062A (ja) 2021-01-21
TW201921365A (zh) 2019-06-01

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Effective date of registration: 20220622

Address after: California, USA

Patentee after: Infineon Technology Co.,Ltd.

Address before: California, USA

Patentee before: CYPRESS SEMICONDUCTOR Corp.