CN1109924C - 光掩模及其制造方法 - Google Patents

光掩模及其制造方法 Download PDF

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Publication number
CN1109924C
CN1109924C CN95107777A CN95107777A CN1109924C CN 1109924 C CN1109924 C CN 1109924C CN 95107777 A CN95107777 A CN 95107777A CN 95107777 A CN95107777 A CN 95107777A CN 1109924 C CN1109924 C CN 1109924C
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CN
China
Prior art keywords
mentioned
pattern
photomask
auxiliary
main
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN95107777A
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English (en)
Chinese (zh)
Other versions
CN1118457A (zh
Inventor
长谷川升雄
寺泽恒男
福田宏
早野胜也
今井彰
茂庭明美
冈崎信次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP17508894A external-priority patent/JP3387224B2/ja
Priority claimed from JP21978694A external-priority patent/JP3413984B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN1118457A publication Critical patent/CN1118457A/zh
Application granted granted Critical
Publication of CN1109924C publication Critical patent/CN1109924C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN95107777A 1994-06-29 1995-06-28 光掩模及其制造方法 Expired - Fee Related CN1109924C (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP146890/94 1994-06-29
JP14689094 1994-06-29
JP146890/1994 1994-06-29
JP17508894A JP3387224B2 (ja) 1994-07-27 1994-07-27 ホトマスク及びパタン形成方法
JP175088/94 1994-07-27
JP175088/1994 1994-07-27
JP21978694A JP3413984B2 (ja) 1994-09-14 1994-09-14 ホトマスクの製造方法
JP219786/94 1994-09-14
JP219786/1994 1994-09-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNB021499330A Division CN1251020C (zh) 1994-06-29 2002-11-08 光掩模及其应用

Publications (2)

Publication Number Publication Date
CN1118457A CN1118457A (zh) 1996-03-13
CN1109924C true CN1109924C (zh) 2003-05-28

Family

ID=27319251

Family Applications (2)

Application Number Title Priority Date Filing Date
CN95107777A Expired - Fee Related CN1109924C (zh) 1994-06-29 1995-06-28 光掩模及其制造方法
CNB021499330A Expired - Fee Related CN1251020C (zh) 1994-06-29 2002-11-08 光掩模及其应用

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB021499330A Expired - Fee Related CN1251020C (zh) 1994-06-29 2002-11-08 光掩模及其应用

Country Status (3)

Country Link
US (2) US5700601A (https=)
KR (1) KR960002536A (https=)
CN (2) CN1109924C (https=)

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JP3409493B2 (ja) * 1995-03-13 2003-05-26 ソニー株式会社 マスクパターンの補正方法および補正装置
JP3431387B2 (ja) * 1996-03-14 2003-07-28 株式会社東芝 露光強度分布表示方法とマスクパターン編集装置
JP3551660B2 (ja) * 1996-10-29 2004-08-11 ソニー株式会社 露光パターンの補正方法および露光パターンの補正装置および露光方法
DE10017767A1 (de) 2000-04-10 2001-10-18 Infineon Technologies Ag Verfahren zur Herstellung von Masken für die Fertigung von Halbleiterstrukturen
US6472123B1 (en) * 2000-05-15 2002-10-29 Micron Technology, Inc. Multiple pass write method and reticle
TWI285295B (en) * 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
EP1612606A3 (en) * 2001-02-23 2009-03-25 ASML Netherlands B.V. Illumination optimization for specific mask patterns
US6703167B2 (en) * 2001-04-18 2004-03-09 Lacour Patrick Joseph Prioritizing the application of resolution enhancement techniques
JP3927003B2 (ja) * 2001-06-27 2007-06-06 株式会社東芝 露光方法
KR100816340B1 (ko) * 2001-08-27 2008-03-24 삼성전자주식회사 액정 표시 장치 제조용 노광 마스크와 이를 이용한 액정표시 장치 제조에서의 기판의 노광 방법
JP2003177506A (ja) * 2001-12-13 2003-06-27 Sony Corp フォトリソグラフィ用マスク、薄膜形成方法、並びに液晶表示装置及び液晶表示装置の製造方法
US6906305B2 (en) * 2002-01-08 2005-06-14 Brion Technologies, Inc. System and method for aerial image sensing
US6787272B2 (en) * 2002-03-01 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd Assist feature for random, isolated, semi-dense, and other non-dense contacts
JP2004012722A (ja) * 2002-06-05 2004-01-15 Seiko Epson Corp フォトマスク及びパターン作製方法及び半導体装置
US6828542B2 (en) * 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
DE10230532B4 (de) * 2002-07-05 2007-03-08 Infineon Technologies Ag Verfahren zum Bestimmen des Aufbaus einer Maske zum Mikrostrukturieren von Halbleitersubstraten mittels Fotolithographie
US6807503B2 (en) * 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication
SG125109A1 (en) * 2003-01-14 2006-09-29 Asml Masktools Bv Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography
SG139530A1 (en) * 2003-01-14 2008-02-29 Asml Masktools Bv Method of optical proximity correction design for contact hole mask
CN1688934B (zh) * 2003-02-27 2010-05-26 富士通微电子株式会社 半导体器件的制造方法
US6759297B1 (en) 2003-02-28 2004-07-06 Union Semiconductor Technology Corporatin Low temperature deposition of dielectric materials in magnetoresistive random access memory devices
US7053355B2 (en) 2003-03-18 2006-05-30 Brion Technologies, Inc. System and method for lithography process monitoring and control
US20040248016A1 (en) * 2003-06-06 2004-12-09 Lucas Kevin D. Method of designing a reticle and forming a semiconductor device therewith
US7276315B2 (en) * 2003-06-27 2007-10-02 Micron Technology, Inc. Methods for generating or designing sidelobe inhibitors for radiation patterning tools
JP4520787B2 (ja) * 2003-06-30 2010-08-11 エーエスエムエル マスクツールズ ビー．ブイ． 半波長以下リソグラフィ模様付けの改良型散乱バーｏｐｃ適用方法
SG144723A1 (en) * 2003-06-30 2008-08-28 Asml Masktools Bv A method, program product and apparatus for generating assist features utilizing an image field map
US7550235B2 (en) * 2003-09-05 2009-06-23 Asml Masktools B.V. Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography
KR100927454B1 (ko) * 2003-10-31 2009-11-19 에이에스엠엘 마스크툴즈 비.브이. 개선된 간섭 매핑 리소그래피를 이용하는 피처 최적화
US7506299B2 (en) * 2003-12-19 2009-03-17 Asml Holding N.V. Feature optimization using interference mapping lithography
US7620930B2 (en) * 2004-08-24 2009-11-17 Asml Masktools B.V. Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography
KR101143005B1 (ko) 2004-12-14 2012-05-08 삼성전자주식회사 마스크 및 이를 이용한 반도체 소자의 제조 방법 및 박막트랜지스터 표시판의 제조 방법
CN100573317C (zh) * 2005-03-29 2009-12-23 中国科学院光电技术研究所 连续面形掩模移动光刻曝光装置
JP4499616B2 (ja) * 2005-05-31 2010-07-07 富士通マイクロエレクトロニクス株式会社 露光用マスクとその製造方法、及び半導体装置の製造方法
US7784015B2 (en) * 2005-07-05 2010-08-24 Texas Instruments Incorporated Method for generating a mask layout and constructing an integrated circuit
US7952803B2 (en) * 2006-05-15 2011-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009231769A (ja) * 2008-03-25 2009-10-08 Toshiba Corp 投影露光方法
KR101087874B1 (ko) * 2009-06-29 2011-11-30 주식회사 하이닉스반도체 광학 근접 효과 보상 방법
JP5409238B2 (ja) * 2009-09-29 2014-02-05 Ｈｏｙａ株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置用画素電極の製造方法
JP5677076B2 (ja) * 2010-01-07 2015-02-25 キヤノン株式会社 フォトマスクデータの生成方法、その作製方法、そのためのプログラム、固体撮像装置の製造方法、および、マイクロレンズアレイの製造方法
CN102193307B (zh) * 2010-03-15 2013-07-31 中芯国际集成电路制造(上海)有限公司 用于增强待量测图案的可辨认度的方法
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
CN103998985B (zh) * 2011-12-21 2018-04-03 大日本印刷株式会社 大型相移掩膜及大型相移掩膜的制造方法
CN113608406A (zh) * 2021-05-27 2021-11-05 联芯集成电路制造(厦门)有限公司 光掩模结构
KR20240020746A (ko) * 2022-08-08 2024-02-16 삼성디스플레이 주식회사 포토 마스크 및 이를 이용한 표시장치 제조방법
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JP3279758B2 (ja) * 1992-12-18 2002-04-30 株式会社日立製作所 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
US5700601A (en) 1997-12-23
CN1251020C (zh) 2006-04-12
US5895741A (en) 1999-04-20
CN1423168A (zh) 2003-06-11
KR960002536A (https=) 1996-01-26
CN1118457A (zh) 1996-03-13

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