CN110938867B - 一种高效制备二维黑磷晶体的方法 - Google Patents
一种高效制备二维黑磷晶体的方法 Download PDFInfo
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- CN110938867B CN110938867B CN201911244505.1A CN201911244505A CN110938867B CN 110938867 B CN110938867 B CN 110938867B CN 201911244505 A CN201911244505 A CN 201911244505A CN 110938867 B CN110938867 B CN 110938867B
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- Prior art keywords
- red phosphorus
- raw material
- quartz tube
- black phosphorus
- temperature
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 237
- 239000013078 crystal Substances 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 73
- 239000002994 raw material Substances 0.000 claims abstract description 113
- 239000010453 quartz Substances 0.000 claims abstract description 75
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 75
- 238000006243 chemical reaction Methods 0.000 claims abstract description 58
- 238000001816 cooling Methods 0.000 claims abstract description 53
- 238000007789 sealing Methods 0.000 claims abstract description 52
- 239000002245 particle Substances 0.000 claims abstract description 43
- 239000003054 catalyst Substances 0.000 claims abstract description 26
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 238000005303 weighing Methods 0.000 claims abstract description 8
- 229910052718 tin Inorganic materials 0.000 claims description 15
- 238000004321 preservation Methods 0.000 claims description 11
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 claims description 10
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- JTDNNCYXCFHBGG-UHFFFAOYSA-L tin(ii) iodide Chemical compound I[Sn]I JTDNNCYXCFHBGG-UHFFFAOYSA-L 0.000 claims description 6
- 229910052745 lead Inorganic materials 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 claims description 3
- KOECRLKKXSXCPB-UHFFFAOYSA-K triiodobismuthane Chemical compound I[Bi](I)I KOECRLKKXSXCPB-UHFFFAOYSA-K 0.000 claims description 3
- ZSUXOVNWDZTCFN-UHFFFAOYSA-L Tin(II) bromide Inorganic materials Br[Sn]Br ZSUXOVNWDZTCFN-UHFFFAOYSA-L 0.000 claims description 2
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims description 2
- UKFWSNCTAHXBQN-UHFFFAOYSA-N ammonium iodide Chemical compound [NH4+].[I-] UKFWSNCTAHXBQN-UHFFFAOYSA-N 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims description 2
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 27
- 238000004880 explosion Methods 0.000 abstract description 7
- 230000006911 nucleation Effects 0.000 abstract description 4
- 238000010899 nucleation Methods 0.000 abstract description 4
- 230000002349 favourable effect Effects 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000843 powder Substances 0.000 description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 230000000630 rising effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 6
- 229910052740 iodine Inorganic materials 0.000 description 6
- 239000011630 iodine Substances 0.000 description 6
- 230000035484 reaction time Effects 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229940124447 delivery agent Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000000713 high-energy ball milling Methods 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN110938867A CN110938867A (zh) | 2020-03-31 |
CN110938867B true CN110938867B (zh) | 2020-10-20 |
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CN112095146B (zh) * | 2020-07-24 | 2022-03-22 | 深圳市中科墨磷科技有限公司 | 一种用于黑磷晶体放大制备的反应器及其应用 |
CN114293146A (zh) * | 2022-03-07 | 2022-04-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | 黑磷及其制备方法和应用 |
CN115449898B (zh) * | 2022-09-01 | 2023-11-24 | 湖北兴发化工集团股份有限公司 | 黑磷晶体的制备方法 |
CN115491760B (zh) * | 2022-09-05 | 2024-01-05 | 陕西科技大学 | 一种单晶Hittorf’s磷材料的制备方法 |
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JPS638293A (ja) * | 1986-06-27 | 1988-01-14 | Nippon Chem Ind Co Ltd:The | 黒リン単結晶の製造方法 |
JPS638292A (ja) * | 1986-06-27 | 1988-01-14 | Nippon Chem Ind Co Ltd:The | 黒リン単結晶の製造方法 |
US6110438A (en) * | 1999-03-17 | 2000-08-29 | Lucent Technologies Inc. | Method of making black phosphorus from red phosphorus |
KR100788487B1 (ko) * | 2006-08-08 | 2007-12-24 | 재단법인서울대학교산학협력재단 | 흑린 및 흑린 탄소 복합체의 제조 방법, 제조된 흑린 및 흑린 탄소 복합체 및 이를 포함하는 리튬 이차 전지와 그 이용 방법 |
US10167196B1 (en) * | 2016-02-09 | 2019-01-01 | The Florida State University Research Foundation, Inc. | Method of conversion of red phosphorous to soluble polyphosphides |
CN106185849B (zh) * | 2016-07-08 | 2017-11-10 | 深圳先进技术研究院 | 一种纳米级黑磷及其制备方法与应用 |
CN106744754A (zh) * | 2016-11-14 | 2017-05-31 | 深圳大学 | 一种用于黑磷制备的红磷预处理方法 |
CN107117590B (zh) * | 2017-06-14 | 2019-01-29 | 合肥工业大学 | 一种梯度球磨制备二维黑磷的方法 |
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