CN1109258A - 微波电路的封装结构 - Google Patents

微波电路的封装结构 Download PDF

Info

Publication number
CN1109258A
CN1109258A CN94115784A CN94115784A CN1109258A CN 1109258 A CN1109258 A CN 1109258A CN 94115784 A CN94115784 A CN 94115784A CN 94115784 A CN94115784 A CN 94115784A CN 1109258 A CN1109258 A CN 1109258A
Authority
CN
China
Prior art keywords
ground connection
encapsulating structure
circuit unit
circuit
connection conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN94115784A
Other languages
English (en)
Other versions
CN1047717C (zh
Inventor
小杉勇平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of CN1109258A publication Critical patent/CN1109258A/zh
Application granted granted Critical
Publication of CN1047717C publication Critical patent/CN1047717C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
    • H05K7/20436—Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing
    • H05K7/20445—Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing the coupling element being an additional piece, e.g. thermal standoff
    • H05K7/20472—Sheet interfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
    • H05K7/20436—Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing
    • H05K7/2049—Pressing means used to urge contact, e.g. springs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19106—Disposition of discrete passive components in a mirrored arrangement on two different side of a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

一种微波电路封装结构，包括内部容纳半导体元 件和母片的电路组件；电路组件有二个接地导体层， 夹在其中间的中央导体层，与中央导体层连接的中央 导体电极，设置在中央导体附近的接地导体电极；上 述部分在电路组件的一个表面上；以及连至另一个表 面上的散热板；母片有二个接地导体层，夹于其中间 的中央导体、中央导体电极、设置在母片的一个表面 上的接地电极；导热弹性物夹在散热板和热辐射板之 间。

Description

本发明涉及微波电路的封装结构，尤其是含有微波电路组件或微波集成电路组件的封装结构。
众所周知，微波或毫米波范围的波长是短的，因此，设计包括传输线路的电路配置同时将传输线路上的不均匀性抑制到低水平并确保电路或线路之间隔离，是困难的。所以微波电路封装必定是又复杂又昂贵。近些年来，微波单片式集成电路（以下简称MMIC）逐渐适合于作为高频带的半导体集成电路。然而，MMIC有许多短处，比如易产生裂缝，使得存在许多封装限制。尤其不适合于集成化分布怛定电路，这将导致大型化。
参照图8，该图展示了传统微波电路的封装结构，上述电路包括具有电路元件103、微波引线102和偏压供给端107的MMIC、MIC组件101，各组件排列在主板100上。这里通过形成在主板100内的外侧导电孔109，将微波引线102和偏压供给端107引至主板100的后面。通过印刷电路板等，钎焊偏压供给端107。并且借助印刷电路板104作钎焊，把微波引线102电连接到另一组件或绝缘体108。把微波引线102的连接部分用盖子106与外部隔离开而屏蔽起来。
如图8所示，由于MMIC不适合于主要由无源元件组成的分布恒定电路的集成化，有源元件被封入气密性外壳内，并且由微波带状线路和钎焊形成这些有源元件和外侧无源元件之间的连接。因此，把MMIC封入气密性外壳是昂贵的。而且要求具有精细分隔开小室的复杂和昂贵的屏蔽外壳，以防止单元电路之间不应有的电连接，这样进一步导致组装成本的提高。
所以上述已有的封装结构存在如下缺点：
（1）为把为MMIC组装到称之为头的气密性外壳中，必须花费相当大的费用，这是因为头本身很贵，而且装配费用也高;
（2）细分成小室的复杂和大型屏蔽外壳相当昂贵;
（3）把头装到屏蔽外壳，装配印刷电路板、焊接端子等，所有这一切必须手工操作，导致高的组装成本;
（4）该结构即大又重，这不利于通迅设备的小型化和减轻重量。
本发明目的在于提供一种小型低成本的微波电路封装结构;本发明的另一个目的在于提供一种具有优异热辐射效率的微波电路封装结构;本发明的进一步目的在于提供一种由电路组件单元可作互换的微波电路封装结构;本发明还有一个目的是提供一种利用上述封装结构包封微波电路。
根据本发明所提供的微波电路封装结构包括：含半导体电路的电路组件;在上面容纳电路组件的母片;接受来自电路组件热量安装在电路组件上的散热板;接受来自散热板用于辐射该热量的辐射器;装在散热板和辐射器之间的热传导弹性物;以及沿辐射器方向推压母片的弹簧装置。
图1是本发明第一实施例的剖视图;
图2（A）和2（B）是在图1中所展示实施例中分别表示母片和电路组件上的电极排布;
图3表示图1所示封装结构应用于包封微波电路器件的剖视图;
图4是第二个实施例中应用的另一个包封微波电路器件的剖视图;
图5是第三个实施例中应用的又一个包封微波电路器件的剖视图;
图6是根据第四个实施例的封装结构剖视图;
图7是根据第五个实施例的封装结构剖视图;
图8是微波电路的通常的封装结构。
参照图1显示根据本发明第一实施微波电路封装结构的剖视图。叙述将从各个部分的构成到总体构成进行。在图1，电路组件1在其内部空间至少装有一个备置了微波电路的半导体元件。电路组件1还具有通过层叠介质层和导体层获得的多层结构14。在本实施例中，结构14包含有中央导体层11c，介质层和一对在介质层上的接地导体层12c1和12c2。这二个接地导体层12c1和12c2借助接地导体通路（层间连接导体）6c被相互连接。在中央导体上形成的电路图形周围设置大量接地导体通路6c，在中央导体上通路6c的配置间距设计成小于相应于在电路组件1所处理的频率的波长的8分之一。利用中央导体通路5c把信号引出到电路组件1的表面，并且连通至具有凸台30的表面电极图形。设置接地导体通路6c，围绕中央导体通路5c，而且其顶端被连在表面上的接地电极6a（见图2）。设置热传导通路8，以释放由半导体元件4产生的热。通过具体有极佳热传导性的通路8，使所产生的热量排放到散热板3。热传导通路8是由Cu/W或Ag组合材料制成。半导体元件4容装在电路组件1内的空间里，并且用良导电体作的盖子7盖住。散热板3用粘结材料2固定在电路组件表面，上述表面还装着半导体元件4。
下面将描述母片10。母片10是由柔性有机材料构成，并且利用带多个电路组件1的大型基片10可形成较大规模电路单元。母片10至少有2个接地导体层12m1和12m2，以及在上述两层间有中央导体层11m。为了把微波信号限制在基片10里面，所以在中央导体11m的周围设置大量接地导体通路6m，该通路6m与上、下外部导体连接，接地导体通路6m需设置在至少围绕中央导体11m的电路图形，理想的是将其设置在所有看不到中央导体图形的那部分表面，使之完全封闭微波信号，通过这种方法，把微波信号的能量封闭在中央导体层11m的范围内。
对于电路组件1，与母片10的情况相类似。连接接地导体层12c1和12c2的大量接地导体通种6c设置在中央导体层11c的电路图形四周，若可能的话，以及其他所有不存在中央导体层11c的电路图形的部分。
接着将说明母片10和电路组件1的电极布局。图2（A）表示了母片10的电极排列，接地导体层12m2具有特殊的非接地导电部分，即分别为用于输入/输出信号以及DC偏压/低频信号的电极5a和9a。除了接地电极6a和电极5a及9a，所有表面皆为保护层。电极6a、5a和9a与各自的通路连接。和通路6m一样，不仅使接地电极6a围绕中央导体层电极5a排列，而且至少是在电路组件1的周围。在该图中，虚线11和13分别表明输入/输出信号线和偏压/低频信号线。如图2（B）所示，电路组件1的表面有接地电极6a和信号电极5a及9a，通过凸台30（图1）使上述电极与母片10上各自的导电电极6a、5a和9a连接。用这种连接，可以在母片10的电极上设置凸台30，而不是在电路组件1的电极上制备。因此，由于微波信号被限制在如上所述的电路组件1和母片10内部，因此，无需象传统微波电路那样要求提供复杂的屏蔽外壳，并且能实现结构紧凑的大规模微波电路。
接着将描述根据本发明的微波电路结构的冷却构成。在图1中，半导体元件4产生的热量必须有效地排放到装置的外面。为此目的通常使用的方法是利用辐射片。这样的辐射结构已被公开，如日本公开的专利申请号为No.60-21611（1985）和No.60-64503（1985）。
然而，不可能应用该辐射结构来封装微波电路器件。并且，该方法仅可用于外部空气引入型冷却系统，而不能用于封闭类型设备。如若热辐射板被直接连在散热板上，那末热量可通过散热板直接被引至外部。但是，不可能使多个电路组件紧密地机械连接到散热板上。这里因为由于在钎焊等尺寸方面的区别，难以为所有电路组件制造高精度（同一板上）散热板平面的顶表面。但是，如果热辐射板固定到散热板，由于母片和热辐射板的热膨胀系数的不同，当应力作用到电路组件和母片的粘结电极部分时，会引起粘结部分的损坏。
在本发明的该实施例中，导热弹性物21被夹在散热板3和热辐射板20之间，并且利用弹簧40对母片10施加压力，以使散热板3和导热弹性物21紧紧接触。采用这种结构，即使散热板3的顶面与装在该处的多个电路组件的高度不一致，也可以利用导热弹性物21使这样的不平整度得到缓解。导热弹性物21是由如硅树脂和AIN制成。目前导热弹性物的热导率一般并不高于金属的，尽管如此，导热弹性物的热导率低的缺点在实践中不会产生问题，因为由半导体元件产生的热量用热扩散板扩展到宽阔的面积上。图3展示了使用本发明封装结构所包封的微波电路装置。在该图中，含有三个电路组件1，并且，辐射板20直接装在装置主体上。主体和盖子51组成气密性外壳50。通过接线端子52提供或获得输入/输出信号以及DC电源。数字53表示与母片10上的导线连接的接线端子;数字54表示一个0形环。在盖子51上，通过支撑器51安装多个弹簧40。把盖子51装到主体上，使弹簧40压住母片10，结果散热板3经导热弹性物21被压到辐射板。因此，通过散热板3、导热弹性物21和辐射板20，产生于电路组件1的热量被高效地释放，元件没有受到任何应力影响。在这种情况下，接线端子53具有弹性，所以当弹簧40挤压母片10时，接线端子53和导线间的连接变得完备了。
可给每个电路元件提供一个弹簧40，并且根据需要可增加。当电路规模小时，弹簧40数量可减少。有关弹簧类型没有限制，可以从能对母片加压的螺旋簧、片簧、塑料泡沫等之中适当选择。
图4展示另一个利用具有弹簧功能的塑料海绵结构55的封装微波电路装置，替代图3的螺旋40。图5展示了利用多个片簧57的又一个封装微波电路装置。数字56表示基板，在此情况下，这会有利于用塑料模压、将片簧57与基片56作在一起。由于施压的目的是使散热板与导热导弹性物紧密接触，所以可利用母片的弹性施加压力，甚至不用弹簧。这时，与分别设置弹簧装置的情况相比较，其结构可得到简化。但是，这要求精确地设计有关母片的变形（翅曲）总量。
由于弹性特征对于母片是必不可少的，所以母片由有机材料如环氧玻璃板制成。在该连接中，电路组件可用与母片同样的有机材料制成。另一方面，当然可以应用陶瓷材料生产电路组件。这种应用陶瓷材料的情况下必须考虑到有机材料（母片）和陶瓷材料（电路组件）之间的热膨胀的差别。由于有机和陶瓷材料之间热膨胀系数的不同，所以由温度变化产生的剪切应力施加于凸台，当应力超过容限时凸台就会被损坏。容限取决于电路组件的大小。因此，当电路组件尺寸很大，并且温度在大范围内变化时，最好在电路组件和母片之间注入树脂材料，以避免应力集中在凸台上。图6展示了提供树脂60的这种结构。
可以考虑到对根据本发明的微波电路的封装结构作各种改型。当需要在电路组件内设置大容量的外部容器或低频半导体基片时，这些元件装入与表面封装系统相应的电路组件表面。作为第五个实施例的图7展示了上述情况下的封装方式，散热板3仅限制在电路组件2的表面部分，而电路组件1装在上述部分背后，在这里装入半导体元件4。而芯片有源元件41和芯片无源元件42被装在上述表面的余下部分。这时应该注意尽量不减少散热板3的面积。
如上所述，在根据本发明微波电路封装结构中，微波信号被限制在电路组件和母片内部而无须复杂、庞大且昂贵的屏蔽外壳;另外由电路组件构成整个电路主要容纳了由半导体集成电路组成的有源元件;母片装着多个电路组件，其主要功能是相互连接或集成化，使电路组件做为一个单元的标准化变为可行;并且组件批量生产的效益导致可靠性的改善和生产成本的降低。此外，甚至发现不良电路组件时，由于可用组件单元进行替换，所以还使产量得到提高。
进而根据本发明，利用散热板来扩散装在电路组件内半导体元件产生的热量，并且经导热弹性物直接把热传递到装置的热辐射板向外放出。因此，可降低半导体元件的温度，并可延长寿命。或者相反，能从半导体元件获得最有效的输出。对于母片上有多个电路组件的情况下，甚至当难以获得散热板顶面理想平直度（同一块板）时，导致出现不均匀性，这时导热弹性物可使微小误差得以缓冲，以确保优异的导热性。
如上所述，本发明的构形可被简化如此大的程度，以致于与公知的封装结构比较，其成本可大大减少。

Claims (10)

1、一种微波电路的封装结构，其特征包括：
具有半导体元件的电路组件；
其上容纳所述电路组件的母片；
装在所述组件上，接收来自所述电路组件热量的散热板；
接收来自所述散热装置，辐射所述热量的辐射装置；
设置在所述热扩散装置和所述辐射装置之间的导热弹性物；
沿所述辐射装置方向压住所述母片的装置。
2、按权利要求1所述封装结构，其特征是所述电路组件包括：
其上容纳所述半导体元件的多层基片;所述多层基片有二个第一接地导电层和在二个第一接地导电层之间的第一中央导电层;所述第一中央导电层具有第一连接线路图形;
把所述第一连接线路图形引至所述电路组件表面的第一中央导电通路;
连接所述二个第一接地导电层的多个第一接地导电通路;所述多个第一接地导电通路围绕所述第一中央导电通路和围绕所述半导体元件设置。
3、按权利要求2所述封装结构，其特征是所述母片包括：
二个第二接地导电层和在二个所述第二接地导电层之间的第二中央导电层;所述第二中央导电层具有第二连接线路图形;
以及连接所述二个第二接地导电层的多个第二接地导电通路;所述多个第二接地导电通路围绕所述第二连接线路图形并在与所述第一接地导电通路相关区域配置。
4、按权利要求2所述封装结构，其特征是所述多层基片具有导热通路，把由所述半导体元件产生的热量传导至所述散热装置。
5、按权利要求1所述封装结构，其特征是所述顶压装置包括螺旋弹簧。
6、按权利要求1所述封装结构，其特征是所述顶压装置包括片弹簧。
7、按权利要求1所述封装结构，其特征是所述顶压装置包括塑料泡沫结构。
8、按权利要求3所述封装结构，其特征是进一步包括凸台装置，把所述第一中央导电通路和所述第一接地导电通路分别连接到所述第二中央导电通路和所述第二接地导电通路。
9、按权利要求8所述封装结构，其特征是进一步包括注入所述电路组件和所述母片之间的树脂材料。
10、按权利要求1所述封装结构，其特征是进一步包括电路元件，所述电路元件与所述散热装置一起安装在所述电路组件上。
CN94115784A 1993-07-12 1994-07-12 微波电路的封装结构 Expired - Fee Related CN1047717C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17172593 1993-07-12
JP171725/93 1993-07-12

Publications (2)

Publication Number Publication Date
CN1109258A true CN1109258A (zh) 1995-09-27
CN1047717C CN1047717C (zh) 1999-12-22

Family

ID=15928522

Family Applications (1)

Application Number Title Priority Date Filing Date
CN94115784A Expired - Fee Related CN1047717C (zh) 1993-07-12 1994-07-12 微波电路的封装结构

Country Status (7)

Country Link
US (1) US5500556A (zh)
EP (1) EP0634890B1 (zh)
CN (1) CN1047717C (zh)
AU (1) AU676324B2 (zh)
CA (1) CA2127736C (zh)
DE (1) DE69401040T2 (zh)
TW (1) TW256982B (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105451514A (zh) * 2014-09-19 2016-03-30 滨特尔技术解决方案有限责任公司 热量传递设备
CN108702853A (zh) * 2015-12-31 2018-10-23 迪讯技术有限责任公司 用于机顶盒组合件的自调整散热器系统
WO2020037467A1 (zh) * 2018-08-20 2020-02-27 海能达通信股份有限公司 散热组件及电子设备
KR20220167036A (ko) * 2021-06-11 2022-12-20 제엠제코(주) 반도체칩을 구비한 반도체 부품과 쿨링장치가 결합된 쿨링시스템
US11908766B2 (en) 2021-04-05 2024-02-20 Jmj Korea Co., Ltd. Cooling system where semiconductor component comprising semiconductor chip and cooling apparatus are joined

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2130498C (en) * 1993-08-26 2000-02-22 Yoshiyuki Imanaka Ink jet recording head and recording apparatus using same
JPH0846098A (ja) * 1994-07-22 1996-02-16 Internatl Business Mach Corp <Ibm> 直接的熱伝導路を形成する装置および方法
US5517753A (en) * 1995-04-06 1996-05-21 International Business Machines Corporation Adjustable spacer for flat plate cooling applications
US5892245A (en) * 1996-11-11 1999-04-06 Emulation Technology, Inc. Ball grid array package emulator
FR2758908B1 (fr) * 1997-01-24 1999-04-16 Thomson Csf Boitier d'encapsulation hyperfrequences bas cout
US6075703A (en) * 1997-03-26 2000-06-13 Samsung Electronics Co., Ltd. Heat sink assembly
DE19752797A1 (de) * 1997-11-28 1999-06-10 Bosch Gmbh Robert Kühlvorrichtung für ein auf einer Leiterplatte angeordnetes, wärmeerzeugendes Bauelement
US5965937A (en) * 1997-12-15 1999-10-12 Intel Corporation Thermal interface attach mechanism for electrical packages
US5920120A (en) * 1997-12-19 1999-07-06 Intel Corporation Assembly for dissipatating heat from a semiconductor chip wherein a stress on the semiconductor chip due to a thermally conductive member is partially relieved
FR2773942B1 (fr) * 1998-01-19 2000-04-21 Ferraz Composant electronique de puissance et son procede de fabrication
US6456100B1 (en) 1998-01-20 2002-09-24 Micron Technology, Inc. Apparatus for attaching to a semiconductor
US6703640B1 (en) * 1998-01-20 2004-03-09 Micron Technology, Inc. Spring element for use in an apparatus for attaching to a semiconductor and a method of attaching
JP3496752B2 (ja) * 1998-02-19 2004-02-16 シャープ株式会社 マイクロ波・ミリ波装置
JP3609935B2 (ja) * 1998-03-10 2005-01-12 シャープ株式会社 高周波半導体装置
FR2776435B1 (fr) * 1998-03-19 2000-04-28 Alsthom Cge Alcatel Amplificateur a grand gain
US5912804A (en) * 1998-05-08 1999-06-15 Schumacher Electric Corporation Diode holder with spring clamped heat sink
US6566879B1 (en) * 2000-02-29 2003-05-20 Koninklijke Philips Electronics, N.V. Apparatus for effecting heat transfer from power semiconductors
JP4060510B2 (ja) * 2000-03-02 2008-03-12 カルソニックカンセイ株式会社 パワー素子の放熱部材への取付構造
US6903541B2 (en) * 2001-05-25 2005-06-07 Tyco Electronics Corporation Film-based microwave and millimeter-wave circuits and sensors
DE10343429B4 (de) * 2002-10-14 2007-08-16 Heidelberger Druckmaschinen Ag Anordnung zum Kühlen eines auf einer Leiterplatte angeordneten elektrischen Bauelementes
US6700195B1 (en) * 2003-03-26 2004-03-02 Delphi Technologies, Inc. Electronic assembly for removing heat from a flip chip
GB0308305D0 (en) * 2003-04-10 2003-05-14 Hewlett Packard Development Co Digital message encryption and authentication
US7068510B2 (en) * 2003-12-04 2006-06-27 International Business Machines Corporation Dissipating heat reliably in computer systems
DE102007052593B4 (de) * 2007-01-09 2011-02-03 Sew-Eurodrive Gmbh & Co. Kg Kühlanordnung und elektrisches Gerät mit einer solchen
US20110164381A1 (en) * 2008-10-31 2011-07-07 Jeffrey A Lev Assembly-supporting Spring Between Rigid Connectors
EP2440005B1 (de) * 2010-10-08 2015-12-23 Eberspächer catem GmbH & Co. KG Elektrische Heizvorrichtung und Verfahren zur Herstellung
US8355255B2 (en) * 2010-12-22 2013-01-15 Raytheon Company Cooling of coplanar active circuits
US8363411B2 (en) * 2011-03-18 2013-01-29 Eldon Technology Limited Passive, low-profile heat transferring system
US8619427B2 (en) 2011-03-21 2013-12-31 Eldon Technology Limited Media content device chassis with internal extension members
US8681495B2 (en) 2011-03-29 2014-03-25 Eldon Technology Limited Media device having a piezoelectric fan
JP5821954B2 (ja) * 2011-06-10 2015-11-24 日本電気株式会社 電子機器、構造体、及び、ヒートシンク
US8866291B2 (en) * 2012-02-10 2014-10-21 Raytheon Company Flip-chip mounted microstrip monolithic microwave integrated circuits (MMICs)
DE102012218932A1 (de) * 2012-10-17 2014-04-17 Robert Bosch Gmbh Elektronisches Bauteil zur Entwärmung von Slug-up-Komponenten
JP5686127B2 (ja) * 2012-11-16 2015-03-18 日立金属株式会社 信号伝送装置
US9049811B2 (en) 2012-11-29 2015-06-02 Bose Corporation Circuit cooling
US20140254100A1 (en) * 2013-03-07 2014-09-11 Barracuda Networks, Inc Cooling Apparatus for Fanless Desktop Enclosure of an Elastomericly Suspended Circuit Board
CN103779313B (zh) * 2014-01-24 2017-02-01 嘉兴斯达微电子有限公司 一种带电极压力装置的功率半导体模块
US9698041B2 (en) 2014-06-09 2017-07-04 Applied Materials, Inc. Substrate temperature control apparatus including optical fiber heating, substrate temperature control systems, electronic device processing systems, and methods
KR102164611B1 (ko) * 2014-07-02 2020-10-12 어플라이드 머티어리얼스, 인코포레이티드 매립형 광섬유들 및 에폭시 광학 확산기들을 사용하는 기판들의 온도 제어를 위한 장치, 시스템들, 및 방법들
JP6608923B2 (ja) 2014-07-02 2019-11-20 アプライド マテリアルズ インコーポレイテッド 溝に経路指定された光ファイバーによる加熱を含む温度制御装置、基板温度制御システム、電子デバイス処理システム、及び処理方法
JP6421491B2 (ja) * 2014-08-13 2018-11-14 富士通株式会社 電子機器
JP6373130B2 (ja) * 2014-09-01 2018-08-15 株式会社エンプラス 電気部品用ソケット
DE102014220127A1 (de) * 2014-10-06 2016-04-07 Robert Bosch Gmbh Halbleiteranordnung mit einer Wärmesenke und einem Andruckelement
GB2543549B (en) * 2015-10-21 2020-04-15 Andor Tech Limited Thermoelectric Heat pump system
WO2017098741A1 (ja) * 2015-12-07 2017-06-15 三菱電機株式会社 マイクロ波モジュール
US10973088B2 (en) 2016-04-18 2021-04-06 Applied Materials, Inc. Optically heated substrate support assembly with removable optical fibers
DE102018000961A1 (de) * 2017-02-20 2018-08-23 Sew-Eurodrive Gmbh & Co Kg Elektronische Anordnung mit Leistungsmodul, Leiterplatte und Kühlkörper
US10966008B1 (en) * 2020-01-13 2021-03-30 Bose Corporation Electronic device with force element
TWI718873B (zh) * 2020-02-18 2021-02-11 四零四科技股份有限公司 具有可活動導熱組件的電子裝置及其相關的散熱模組
CN114567960B (zh) * 2020-11-27 2024-06-11 华为技术有限公司 具有浮动支撑结构的电子设备
EP4043154A1 (de) * 2021-02-16 2022-08-17 Hilti Aktiengesellschaft Vorspanneinrichtung für eine platine
CN113453418A (zh) * 2021-06-28 2021-09-28 浙江挚领科技有限公司 导热装置及其制造方法
DE102021129117A1 (de) * 2021-11-09 2023-05-11 Rolls-Royce Deutschland Ltd & Co Kg Leiterplattenanordnung
FR3138977A1 (fr) * 2022-08-16 2024-02-23 VALEO EQUIPEMENTS ELECTRIQUES MOTEUR - Sce PI Un élément élastique pour convertisseur de puissance électrique

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021611A (ja) * 1983-07-15 1985-02-04 Matsushita Electric Ind Co Ltd マイクロ波電力増幅モジユ−ル
JPS6064503A (ja) * 1983-09-19 1985-04-13 Matsushita Electric Ind Co Ltd マイクロ波回路
JPS60160149A (ja) * 1984-01-26 1985-08-21 Fujitsu Ltd 集積回路装置の冷却方式
JPS6174356A (ja) * 1984-09-19 1986-04-16 Hitachi Comput Eng Corp Ltd 半導体装置
US5345107A (en) * 1989-09-25 1994-09-06 Hitachi, Ltd. Cooling apparatus for electronic device
US5065280A (en) * 1990-08-30 1991-11-12 Hewlett-Packard Company Flex interconnect module
EP0532244B1 (en) * 1991-09-13 1996-12-18 Fuji Electric Co. Ltd. Semiconductor device
KR100485801B1 (ko) * 2002-03-07 2005-04-28 삼성전자주식회사 서로 다른 사설망에 존재하는 네트워크장치들 간의직접접속을 제공하는 망접속장치 및 방법

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105451514A (zh) * 2014-09-19 2016-03-30 滨特尔技术解决方案有限责任公司 热量传递设备
CN105451514B (zh) * 2014-09-19 2018-05-08 滨特尔技术解决方案有限责任公司 热量传递设备
CN108702853A (zh) * 2015-12-31 2018-10-23 迪讯技术有限责任公司 用于机顶盒组合件的自调整散热器系统
CN108702853B (zh) * 2015-12-31 2020-06-02 迪讯技术有限责任公司 自调整散热器系统、电子装置及其组装方法
WO2020037467A1 (zh) * 2018-08-20 2020-02-27 海能达通信股份有限公司 散热组件及电子设备
US11908766B2 (en) 2021-04-05 2024-02-20 Jmj Korea Co., Ltd. Cooling system where semiconductor component comprising semiconductor chip and cooling apparatus are joined
KR20220167036A (ko) * 2021-06-11 2022-12-20 제엠제코(주) 반도체칩을 구비한 반도체 부품과 쿨링장치가 결합된 쿨링시스템
KR102569184B1 (ko) * 2021-06-11 2023-08-23 제엠제코(주) 반도체칩을 구비한 반도체 부품과 쿨링장치가 결합된 쿨링시스템

Also Published As

Publication number Publication date
CN1047717C (zh) 1999-12-22
CA2127736C (en) 1999-03-23
CA2127736A1 (en) 1995-01-13
AU676324B2 (en) 1997-03-06
DE69401040D1 (de) 1997-01-16
TW256982B (zh) 1995-09-11
US5500556A (en) 1996-03-19
DE69401040T2 (de) 1997-06-05
AU6738194A (en) 1995-01-19
EP0634890B1 (en) 1996-12-04
EP0634890A1 (en) 1995-01-18

Similar Documents

Publication Publication Date Title
CN1047717C (zh) 微波电路的封装结构
US5943213A (en) Three-dimensional electronic module
US4103318A (en) Electronic multichip module
KR970005707B1 (ko) 다층 배선 기판, 이 기판을 이용한 반도체 장치 및 다층 배선 기판의 제조방법
US6320257B1 (en) Chip packaging technique
US4873615A (en) Semiconductor chip carrier system
US5484959A (en) High density lead-on-package fabrication method and apparatus
US5014161A (en) System for detachably mounting semiconductors on conductor substrate
US6078501A (en) Power semiconductor module
US4763188A (en) Packaging system for multiple semiconductor devices
US5025306A (en) Assembly of semiconductor chips
US3780352A (en) Semiconductor interconnecting system using conductive patterns bonded to thin flexible insulating films
KR950006439B1 (ko) 반도체장치 및 그 제조방법
EP0478188A2 (en) Integrated circuit package and compact assemblies thereof
US5227583A (en) Ceramic package and method for making same
JPH03502986A (ja) マイクロ波およびミリメータ波砒化ガリウム集積回路用の低温度共焼成セラミックパッケージ
US3662230A (en) A semiconductor interconnecting system using conductive patterns bonded to thin flexible insulating films
EP0245179B1 (en) System for detachably mounting semiconductors on conductor substrate.
JP2001085602A (ja) 多重チップ半導体モジュールとその製造方法
US3673309A (en) Integrated semiconductor circuit package and method
KR20010041593A (ko) 다수의 반도체 칩을 포함하는 반도체 소자
USRE37416E1 (en) Method for manufacturing a modular semiconductor power device
EP0924845A2 (en) Power semiconductor module
US5359488A (en) Packaging system for a standard electronic module
WO2022170775A1 (zh) 一种功率结构体和制备方法以及设备

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 19991222

Termination date: 20100712