CN110854028A - 倒装芯片接合方法 - Google Patents

倒装芯片接合方法 Download PDF

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Publication number
CN110854028A
CN110854028A CN201910752106.XA CN201910752106A CN110854028A CN 110854028 A CN110854028 A CN 110854028A CN 201910752106 A CN201910752106 A CN 201910752106A CN 110854028 A CN110854028 A CN 110854028A
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China
Prior art keywords
substrate
adhesive layer
die
dies
heating
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CN201910752106.XA
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English (en)
Inventor
陈华日
崔容元
姜明成
金永锡
金沅槿
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN110854028A publication Critical patent/CN110854028A/zh
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    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
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Abstract

一种倒装芯片接合方法，包括：获得裸片，其包括第一衬底和位于第一衬底上的粘合层；将裸片接合至不同于第一衬底的第二衬底；以及，固化粘合层。固化粘合层包括：加热第二衬底以熔化粘合层，以及向粘合层和第二衬底提供压强大于大气压强的空气。

Description

倒装芯片接合方法
相关申请的交叉引用
本申请要求于2018年8月20日在韩国知识产权局提交的韩国专利申请No.10-2018-0096743的优先权，其全部内容通过引用方式并入本文。
技术领域
本文的发明构思涉及制造半导体装置的方法，更具体地，涉及倒装芯片接合方法。
背景技术
在电子产品中使用的半导体封装件中，当前趋势是趋向小的尺寸和厚度。因此，对通过倒装芯片接合将半导体芯片互连至封装基板的方法感兴趣，以便提供高密度和高容量的半导体封装件，并且可以在最小化半导体封装件的安装面积和厚度的同时，以高速组装半导体封装件。
发明内容
本发明构思的实施例提供一种倒装芯片接合方法，其能够减少诸如空隙和倒角(fillet)之类的缺陷。
本发明构思的实施例提供一种倒装芯片接合方法，包括：获得裸片，所述裸片包括第一衬底和位于第一衬底上的粘合层；将裸片接合至不同于第一衬底的第二衬底；以及，固化粘合层。固化粘合层包括：加热第二衬底以熔化粘合层，以及向粘合层和第二衬底提供压强大于大气压强的空气。
本发明构思的实施例还提供一种倒装芯片接合方法，包括：获得多个裸片，所述多个裸片中的每一个裸片包括第一衬底和位于第一衬底上的粘合层；将所述多个裸片提供到第二衬底上；将所述多个裸片和粘合层加热至第一温度，以熔化所述多个裸片的凸块和粘合层；将所述多个裸片靠着第二衬底按压；确定所述多个裸片中的响应于按压而接合至第二衬底的裸片的数量是否大于参考数量；在确定接合至第二衬底的所述裸片的数量大于参考数量时，将第二衬底加热至第二温度以重新熔化粘合层，第二温度小于第一温度；以及，通过向粘合层和第二衬底提供压强等于或大于大气压强的空气来从粘合层去除空隙。
本发明构思的实施例还提供一种倒装芯片接合方法，包括：将裸片置于第二衬底上，所述裸片包括具有金属凸块的第一衬底和位于第一衬底上的粘合层；将裸片加热至第一温度；在加热之后将裸片靠着第二衬底按压，以将裸片接合至第二衬底；在按压之后在烤炉中将第二衬底加热至第二温度，以熔化粘合层；以及，通过将烤炉中的空气压强增加至大于大气压强来去除熔化的粘合层中的空隙。
附图说明
图1示出了根据本发明构思的示例实施例的倒装芯片接合方法的流程图。
图2、图3、图4、图5、图6、图7、图8、图9和图10示出了描述图1的倒装芯片接合方法的截面示图。
图11示出了图1的流程图中的获得裸片的步骤的流程图。
图12示出了图1的流程图中的接合裸片的步骤的流程图。
图13示出了图1的流程图中的固化粘合层的步骤的流程图。
图14示出了示出空隙去除率如何依赖于图9中所示的壳体中的空气压强的曲线图。
图15示出了典型真空压强下粘合层的倒角的截面图。
具体实施方式
图1示出了根据本发明构思的示例实施例的倒装芯片接合方法的流程图。图2、图3、图4、图5、图6、图7、图8、图9和图10示出了描述图1的倒装芯片接合方法的截面示图。
参照图1至图10，根据本发明构思的倒装芯片接合方法包括：获得裸片40的步骤S10；接合裸片40的步骤S20；确定是否接合了给定数量的裸片(即，多个裸片)40的步骤S30；以及固化粘合层30的步骤S40。下文中，裸片40可以指单个裸片或多个裸片二者。在步骤S10，可以从第一衬底10制备裸片40。在步骤S20，可以使用粘合层30来将裸片40附接至第二衬底50(即，将裸片40接合至不同于第一衬底10的第二衬底50)。在步骤S30，进行是否将给定数量的裸片40接合至了第二衬底50的确定。在步骤S40，可以从粘合层30去除缺陷。
图11示出了如图1的流程图中所示的获得裸片40的步骤S10的示例。
参照图2至图4和图11，获得裸片40的步骤S10可以包括形成凸块20的步骤S12、形成粘合层30的步骤S14和切割粘合层30和第一衬底10的步骤S16。
参照图2和图11，球附接设备(未示出)可以在第一衬底10上或上方形成凸块20(S12)。例如，第一衬底10可以包括硅晶圆。第一衬底10可以在其上主表面上或上方具有多个第一焊盘12。第一焊盘12可以为导电的。可以在第一焊盘12上形成凸块20。凸块20中的每一个可以包括焊球。凸块20中的每一个可以为金属的。
参照图3和图11，粘合剂涂覆设备(未示出)可以在第一衬底和凸块20上或上方形成粘合层30(S14)。粘合层30可以涂覆在第一衬底10的整个主表面上。粘合层30可以包括非导电膜(NCF)或非导电膏(NCP)。例如，粘合层30可以包含热固性树脂、硬化剂和还原剂。热固性树脂可包括例如双酚A环氧树脂、双酚F环氧树脂、酚醛清漆环氧树脂、脂族环氧树脂或缩水甘油胺环氧树脂等。硬化剂可以使热固性树脂固化。硬化剂可包括例如胺或聚酰亚胺。热固性树脂和硬化剂可以具有例如约100焦耳/克(J/g)至约150J/g的每单位质量的卡路里值的当量比。热固性树脂和硬化剂可以具有例如约10:1至约15:1的混合比。还原剂可以在约100℃至约150℃或更高的温度下反应，以从第一焊盘12和凸块20去除原生氧化物。例如，可以在还原剂的一个分子中包括一种或多种醇羟基(例如，二甲醇、二乙二醇、丁三醇或三乙醇胺)、一种或多种酚羟基(例如，萘酚、羟基氢醌或三羟基苯并菲酮)、一种或多种羧酸(例如，草酸、琥珀酸、丙二酸、含氧酸或羧酸衍生物)、具有未共用电子对的含氮化合物(例如，咪唑或胺)、或它们的组合。
粘合层30还可以包含例如羧酸水合物、羟基水合物或酚水合物等的助熔剂。还原剂可以在约150℃下与原生氧化物反应。
参照图4和图11，切割设备42可以将粘合层30和第一衬底10切割为多个裸片40(S16)。切割设备42可以为例如晶圆锯床或激光锯床。裸片40可以包括例如存储器芯片、逻辑芯片、或应用处理器(AP)等。当从平面图中观察时，裸片40可以具有矩形形状。
图12示出了如图1的流程图中所示的接合裸片40的步骤S20的示例。
参照图5至图7和图12，在步骤S20，对裸片40和粘合层30执行热压处理。例如，接合裸片40的步骤S20可以包括提供裸片40的步骤S22、加热裸片40的步骤S24和按压裸片40的步骤S26。
参照图5和图12，接合头60可以将裸片40提供(即，放置)在第二衬底50上(S22)。第二衬底50可以在上主表面上具有多个第二焊盘52。第二焊盘52可以为导电的。凸块20可以与第二焊盘52对准。第一焊盘12也可以与第二焊盘52对准。接合头60可以在约0.5秒或更短时间内将第一焊盘12与第二焊盘52对准。接合头60可以具有第一加热器62。第一加热器62可以与第一电源64和第一开关66串联连接。第一电源64可以向第一加热器62供应第一加热功率。第一开关66可以控制第一加热功率。
参照图6和图12，当第一开关66闭合时，由第一加热功率供电的第一加热器62可以加热裸片40并且熔化裸片40的凸块20和粘合层30(S24)。第一加热器62可以例如将裸片40加热至约150℃至约300℃的温度(即，第一温度)。
参照图7和图12，如箭头所示，接合头60可以将裸片40靠着第二衬底50按压(S26)。凸块20可以将第一焊盘12连接至第二焊盘52。接合头60可以高速地将裸片40接合至第二衬底50。例如，接合头60可以将裸片40靠着第二衬底50按压约3秒至约4秒，以将裸片40接合至第二衬底50。然而，如果如上所述地将裸片40迅速地按压特定时间或持续时间以进行接合，则粘合层30热固性树脂和硬化剂之间的固化反应可能不牢固或不完整。此外，如所述地迅速接合裸片40可在粘合层30中生成大量的空隙32。空隙32可以为粘合层30的缺陷。空隙32可以靠近第二衬底50的顶表面生成，并且可占据粘合层30的总体积的约4％。
当随后断开第一开关66时，凸块20和粘合层30可以冷却。随后，凸块20和粘合层30可以凝固。
作为替代，可以在第二衬底50上形成粘合层30，并且可以随后将裸片40提供至粘合层30上。然而，在这种情况下，粘合层30可污染第二衬底50的侧表面和底表面，并且还可能出现裸片40的对准误差。相反，当粘合层30形成在裸片40上，并且随后将其上具有粘合层30的裸片40接合至第二衬底50时，可以防止裸片40的对准误差。
参照图1和图8，在步骤S30，控制器100可以确定给定数量的裸片40是否接合至了第二衬底50。控制器100可以例如执行公知的裸片40的测试和/或检查，以确定裸片40是否成功地接合至第二衬底50。例如，控制器100可以确定在步骤S20中成功地接合至第二衬底50的裸片的数量是否大于参考数量。在给定数量的裸片40未接合至第二衬底50的情况下(或换言之，成功地接合至第二衬底50的裸片40的数量不大于参考数量(S30中的否))，则所述倒装芯片接合方法返回至步骤S20，并且接合头60可以额外地和/或重复地执行将至少一个裸片40接合至第二衬底50(S20)。结果，可以将给定数量的裸片40接合至第二衬底50(或换言之，成功地接合至第二衬底50的裸片40的数量大于参考数量(S30中的是))，并且所述倒装芯片接合方法可以前进至步骤S40。
在第二衬底50是印刷电路板的情况下，可以将约200个至约500个裸片40接合至第二衬底50，并且裸片40的接合(S20)的持续时间可以为例如约6分钟至约25分钟。在第二衬底50是硅晶圆的情况下，可以将约1000个裸片40接合至第二衬底50，并且裸片40的接合(S20)的持续时间可以为例如约50分钟至约1小时。
图13示出了如图1的流程图中所示的固化粘合层30的步骤S40的示例。
参照图9、图10和图13，可以在固化粘合层30的步骤S40处对粘合层30执行回流焊接处理。例如，可以在约10分钟至约60分钟内将粘合层30成功地固化。固化粘合层30的步骤S40可以包括加热第二衬底50的步骤S42和提供空气82的步骤S44。
参照图9和图13，当将给定数量的裸片40接合至第二衬底50时(或换言之，成功地接合至第二衬底50的裸片40的数量大于参考数量(图1的S30中的是))，可以在烤炉70中加热第二衬底50(S42)。在烤炉70中，可以加热第二衬底50以重新熔化粘合层30和/或凸块20。例如，烤炉70可以包括壳体72、板74、第二加热器76和第二电源78。其中放置有第二衬底50的壳体72可以提供气密密闭的空间。板74可以属于壳体72的地板侧(floor side)或者可以存在于在壳体72的地板侧上。第二衬底50可以装载或保持在板74上。第二加热器76可以安装或布置在板74中。当第二电源78向第二加热器76供应第二加热功率时，第二加热器76可以加热第二衬底50。第二加热器76可以将第二衬底50加热至例如约100℃至约150℃的温度(即，第二温度)。第二温度可以低于第一温度。当将第二衬底50加热至约100℃至约150℃的温度时，粘合层30和/或凸块20可熔化，并且熔化的粘合层30可具有约2000帕斯卡-秒(Pa·s)至约3000Pa·s的粘度。替代性地，可以将第二衬底50加热至约50℃至约200℃的温度，以熔化粘合层30，并且熔化的粘合层30可具有约500Pa·s至约4000Pa·s的粘度。壳体72可以与空气供应部80接合。
参照图10和图13，空气供应部80可以将空气82提供至壳体72中的粘合层30和第二衬底50，从而从粘合层30去除空隙32(S44)。空气82可以包括例如氮气、氦气、氧气、二氧化碳气体、或氩气、或它们的组合。空气供应部80可以包括空气泵。当空气供应部80将空气82提供至壳体72中时，可以增大壳体72中的空气82的压强。当壳体72中的空气82的压强增大时，粘合层30的内聚力和/或表面张力可以增大。当粘合层30的内聚力和/或表面张力增大时，可以从粘合层30排出或去除空隙32。
图14示出了示出空隙32的去除率如何依赖于壳体72中的空气82的压强的曲线图。水平轴示出了空气压强(兆帕)，并且垂直轴示出了空隙去除率。
参照图14，当壳体72中的空气82的压强等于或大于约3巴(或0.3Mpa)时，空隙32的去除率可以等于或大于约97％。当壳体72中的空气82的压强为约7巴(或0.7Mpa)至约10巴(或1.0Mpa)时，空隙32的去除率可以为几乎约100％。当壳体72中的空气82的压强等于或大于约4巴(或0.4Mpa)时，空隙32的去除率可以为几乎约98％。当壳体72中的空气82的压强为约1巴(或0.1Mpa)至约2巴(或0.2Mpa)时，空隙32的去除率可以等于或小于约95％。
图15示出了典型真空压强下粘合层30的倒角34的截面图。
参照图15，当壳体72中的空气82的压强降低至真空压强时，可以迅速地去除或减少粘合层30中的空隙32。壳体72可以与排气部90接合以将空气82从壳体72中抽出或泵出。排气部90可以包括空气泵。壳体72中的空气82的压强可以降低至真空压强。然而，当空气82的压强降低至真空压强时，可以生成和/或增加粘合层30的倒角34。倒角34是当粘合层30的一部分向外突出到裸片40的外部时形成的一种缺陷。换言之，粘合层30的倒角34突出于裸片40的上主表面上方。
可期望将封装件布置在裸片40上。当倒角34比裸片40高或厚时(或换言之，当倒角34凸出于裸片40的上主表面上方时)，封装件可不良地层叠在裸片40上。
返回参照图9和图10，空气供应部80可以将壳体72内的空气82提供为具有等于或大于大气压强(或1巴)的压强。因此，可以从粘合层30减少或去除诸如空隙32和倒角34之类的缺陷。
在根据本发明构思的倒装芯片接合方法中，可以将压强大于大气压强的空气提供至衬底和裸片之间的粘合层，这可使得粘合层的诸如空隙和倒角之类的缺陷减少。
虽然已经参照示例实施例描述了本发明构思，但是对于本领域技术人员而言，应当理解可以在不脱离本发明构思的技术精神和特征的情况下做出各种改变和修改。因此，应当理解上述实施例是说明性的而非限制性的。

Claims (23)

1.一种倒装芯片接合方法，包括：
获得裸片，所述裸片包括第一衬底和位于所述第一衬底上的粘合层；
将所述裸片接合至不同于所述第一衬底的第二衬底；以及
固化所述粘合层，
其中，所述固化所述粘合层包括：
加热所述第二衬底以熔化所述粘合层，以及
向所述粘合层和所述第二衬底提供具有比大气压强大的压强的空气。
2.根据权利要求1所述的方法，其中，以等于或大于3巴的压强提供所述空气。
3.根据权利要求1所述的方法，其中，所述粘合层包括：
环氧树脂；和
使所述环氧树脂固化的硬化剂，
其中，所述环氧树脂和所述硬化剂具有100焦耳/克至150焦耳/克的每单位质量的卡路里值的当量比。
4.根据权利要求3所述的方法，其中，所述粘合层还包括还原剂。
5.根据权利要求4所述的方法，其中，所述还原剂包括醇羟基、酚羟基、羧酸和含氮化合物中的一种或多种，其中
所述醇羟基包括二甲醇、二乙二醇、丁三醇或三乙醇胺，
所述酚羟基包括萘酚、羟基氢醌、或三羟基苯并菲酮，
所述羧酸包括草酸、琥珀酸、丙二酸、含氧酸或羧酸衍生物，并且
所述含氮化合物包括咪唑或胺。
6.根据权利要求1所述的方法，其中，加热所述第二衬底包括：将所述第二衬底加热至50℃至200℃以使得所述粘合层具有500Pa·s至4000Pa·s的粘度。
7.根据权利要求1所述的方法，其中，固化所述粘合层包括执行回流焊接处理。
8.根据权利要求1所述的方法，其中，接合所述裸片包括执行热压处理。
9.根据权利要求1所述的方法，其中，接合所述裸片包括：
将所述裸片提供到所述第二衬底上；
加热所述裸片；以及
将所述裸片靠着所述第二衬底按压。
10.根据权利要求9所述的方法，其中，所述加热所述裸片包括将所述裸片加热至150℃至300℃。
11.一种倒装芯片接合方法，包括：
获得多个裸片，所述多个裸片中的每一个包括第一衬底和位于所述第一衬底上的粘合层；
将所述多个裸片提供到第二衬底上；
将所述多个裸片和所述粘合层加热至第一温度，以熔化所述多个裸片的凸块和所述粘合层；
将所述多个裸片靠着所述第二衬底按压；
确定所述多个裸片中的响应于所述按压而接合至所述第二衬底的裸片的数量是否大于参考数量；
在确定接合至所述第二衬底的所述裸片的数量大于所述参考数量时，将所述第二衬底加热至第二温度以重新熔化所述粘合层，所述第二温度小于所述第一温度；以及
通过向所述粘合层和所述第二衬底提供压强等于或大于大气压强的空气来从所述粘合层去除空隙。
12.根据权利要求11所述的方法，其中，
所述第一温度是150℃至300℃，并且
所述第二温度是100℃至150℃。
13.根据权利要求11所述的方法，其中，
在烤炉中加热所述第二衬底，并且
通过与所述烤炉接合的空气供应部来提供所述空气。
14.根据权利要求13所述的方法，其中，所述烤炉包括：
壳体；
板，其设置在所述壳体中并且配置为保持所述第二衬底；以及
加热器，其布置在所述板中并且配置为加热所述第二衬底。
15.根据权利要求11所述的方法，其中，所述获得多个裸片包括：
在衬底的多个第一焊盘上形成所述凸块；
在所述凸块和所述衬底上形成粘合剂；以及
切割所述粘合剂和所述衬底以提供所述多个裸片，所述多个裸片各自包括分别作为所述第一衬底和所述粘合层的切割的粘合剂和切割的衬底。
16.根据权利要求11所述的方法，其中，以等于或大于3巴的压强提供所述空气。
17.根据权利要求11所述的方法，其中，所述粘合层包括：
环氧树脂；以及
使所述环氧树脂固化的硬化剂，
其中，所述环氧树脂和所述硬化剂具有10:1至15:1的混合比。
18.根据权利要求17所述的方法，其中，所述环氧树脂包括双酚A环氧树脂、双酚F环氧树脂、酚醛清漆环氧树脂、脂族环氧树脂、或缩水甘油胺环氧树脂。
19.根据权利要求17所述的方法，其中，所述硬化剂包括胺或聚酰亚胺。
20.根据权利要求17所述的方法，其中，所述粘合层还包括还原剂，
其中，所述还原剂在所述第二温度或更高温度下与所述凸块上的原生氧化物反应。
21.一种倒装芯片接合方法，包括：
将裸片放置在第二衬底上，所述裸片包括具有金属凸块的第一衬底和位于所述第一衬底上的粘合层；
将所述裸片加热至第一温度；
在加热之后将所述裸片靠着所述第二衬底按压，以将所述裸片接合至所述第二衬底；
在按压之后在烤炉中将所述第二衬底加热至第二温度，以熔化所述粘合层；以及
通过将所述烤炉中的空气压强增加至大于大气压强来去除熔化的粘合层中的空隙。
22.根据权利要求21所述的方法，其中，所述第一温度是150℃至300℃，并且所述第二温度是100℃至150℃。
23.根据权利要求21所述的方法，其中，去除所述空隙包括将所述空气压强增加至3巴或更大。
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