CN110695575A - 用于引线焊接的焊接机上的自动悬置芯片优化工具及相关方法 - Google Patents
用于引线焊接的焊接机上的自动悬置芯片优化工具及相关方法 Download PDFInfo
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Abstract
提供了一种在引线焊接操作期间提供施加到多个焊接位置的z轴力曲线的方法。该方法包括:(a)确定用于位于至少一个参考半导体器件的未受支承部分上的多个焊接位置中的每一个的z轴力曲线;以及(b)在主题半导体器件的随后焊接期间施加该z轴力曲线。同样提供了如下方法:在接头的形成期间确定施加到焊接位置的最大焊接力;以及确定用于形成接头的z轴匀速曲线。
Description
本申请是于2016年11月3日提交的申请号为201610959217.4的中国发明专利申请的分案申请,其母案的发明名称为“用于引线焊接的焊接机上的自动悬置芯片优化工具及相关方法”。
相关申请的交叉引用
本申请要求于2016年8月11日提交的美国申请No.15/234,563以及于2015年11月4日提交的美国临时申请No.62/250,745的优先权,这两篇申请的内容被通过参引结合到本文中。
技术领域
本发明涉及引线焊接(wire bonding)操作,并且更具体地涉及确定用于与悬置芯片(die)应用结合使用的引线焊接程序参数的改进方法。
背景技术
在半导体封装工业中,引线焊接继续一种在位于封装件内的两个(或多个)位置之间提供电气互连的主要方法。在常规引线焊接应用中,引线焊接工具(例如,球焊应用中的毛细管焊接工具、楔焊应用中的楔焊工具等)被用于将引线(wire)的第一端焊接到第一焊接位置以形成第一接头(bond)。随后,引线的作为第一接头的延续部分的长度被朝向第二焊接位置延伸。随后,(作为第一接头和引线的长度的延续部分的)第二接头形成于第二焊接位置处。由此,在第一焊接位置和第二焊接位置之间形成弧状连接线(wire loop)。在接头的形成期间,可结合焊接力和/或热量使用多种类型的能量(例如,超声、热超声、热压缩等)。
在某类半导体封装件中,多种半导体芯片被以“堆叠芯片”构造设置。在这种封装件中,一个或多个芯片可悬置在其它芯片(或垫片、衬底等)上。图1示出了这种封装件。在图1中,下部半导体芯片102由衬底100支承(其中,弧状连接线108在位于芯片102上的焊接位置和位于衬底100上的另一焊接位置之间提供互连)。垫片104被定位在下部半导体芯片102和上部半导体芯片106之间。上部半导体芯片106包括悬置在垫片104和下部半导体芯片102上的未受支承部分。因此,上部半导体芯片106可被称之为“悬置芯片”。
在图1中,在上部半导体芯片106和另一位置(如,衬底100)之间形成另一弧状连接线是合乎要求的。图1示出了焊接过程的开始,由于球形接头112正被使用引线焊接工具110(作为第一接头)焊接到位于上部半导体芯片106上的焊接位置(在那里,引线焊接工具110由焊头组件114承载)。因为上部半导体芯片106是悬置芯片,因此该芯片弯曲(即,芯片偏转,如图1中所示)。该芯片偏转会导致损坏该悬置芯片本身(例如,开裂等)或通过与位于该悬置芯片下方的其它结构(例如,诸如弧状连接线108)接触而受损。
由此,在悬置芯片应用中结合引线焊接控制潜在损坏的改进方法会是合乎要求的。
发明内容
根据本发明的示例性实施例,提供了一种提供在引线焊接操作期间施加到多个焊接位置的z轴力曲线的方法。该方法包括:(a)确定用于位于至少一个参考半导体器件的未受支承部分上的多个焊接位置中的每一个的z轴力曲线;以及(b)在主题半导体器件的随后焊接期间施加该z轴力曲线。
根据本发明的另一示例性实施例,提供了一种确定在接头的形成期间待施加到焊接位置的最大焊接力的方法。该方法包括:(a)提供用于至少一个参考半导体器件的最大z轴偏转值;(b)在位于至少一个参考半导体器件上的多个焊接位置处以多个焊接力值测量z轴偏转值;以及(c)确定用于焊接位置中的每一个的最大焊接力。
根据本发明的又一示例性实施例,提供了一种确定用于形成接头的z轴匀速曲线的方法。该方法包括:(a)提供用于半导体器件的最大z轴偏转值;(b)在位于至少一个参考半导体器件上的多个焊接位置处以多个z轴匀速曲线测量z轴偏转值;以及(c)确定用于焊接位置中的每一个的z轴匀速曲线。
根据本发明的又一示例性实施例,提供了一种确定最大焊球直径的方法。该方法包括:(a)确定用于形成接头的焊接位置的最大焊接力;(b)确定用于在焊接位置处形成接头的z轴匀速曲线;以及(c)在计算机上,使用在步骤(a)中确定的最大焊接力和步骤(b)中的z轴匀速曲线确定用于焊接位置的最大焊球尺寸。
附图说明
当结合附图进行阅读时,本发明通过下列详细描述得到最好地理解。所强调的是,根据一般惯例,附图的多种特征并未按照比例绘制。相反,为清楚起见,任意地扩大或缩小这多种特征的尺寸。图中所包括的是下列视图:
图1是一种包括悬置芯片的常规堆叠芯片器件的一部分的侧视简图;
图2是示出了在弧状连接线的第一接头的形成期间引线焊接机的焊头组件的一部分的z轴位置曲线的正时图,该弧状连接线的第一接头在图示本发明的多个示例性实施例中是有用的;
图3是示出了根据本发明的示例性实施例的在弧状连接线的第一接头的形成期间引线焊接机的焊头组件的一部分的z轴位置曲线的正时图;
图4是示出了在接头的形成期间通过引线焊接机的焊接工具施加的力的力曲线,该接头在图示本发明的多个示例性实施例中是有用的;
图5A是包括三个焊接位置的悬置芯片的简化俯视框图,这三个焊接位置在示出本发明的多个示例性实施例中是有用的;
图5B是示出了在根据本发明的示例性实施例的图5A的悬置芯片的多个位置处形成接头期间,引线焊接机的焊头组件的一部分的z轴位置的正时图;
图5C是示出了在根据本发明的示例性实施例的图5A的悬置芯片的多个位置处形成接头期间,由线缆焊接引线焊接机的引线焊接工具施加的焊接力的焊接力曲线;
图6是示出了在根据本发明的示例性实施例的引线焊接操作期间被施加到多个焊接位置的z轴力曲线的方法的流程图;
图7是示出了根据本发明的示例性实施例的一种在接头的形成期间被施加到焊接位置的最大焊接力的方法的流程图;
图8是示出了根据本发明的示例性实施例的一种确定用于形成接头的z轴匀速曲线的方法的流程图;以及
图9是示出了根据本发明的示例性实施例的一种确定最大焊球直径的方法的流程图。
具体实施方式
如本文中所使用的那样,术语“z轴力曲线”指的是一种在时间周期期间待结合引线焊接操作(或引线焊接操作的一部分)沿z轴施加的力。这种曲线可以多种格式提供,这些格式包括但不限于例如图形格式(例如,参见图4)、表格格式(例如,时间增量处的一系列力值)等。这种力曲线可被提供用于整个焊接周期(例如图4中的曲线),或可被提供用于焊接周期的一部分(例如,在导致升离(lift off)的力斜降(对应于图3的虚线部分)期间)。
根据本发明的某些示例性实施例,自动确定(例如,计算)引线焊接参数的系统和方法被提供用于引线焊接器(即,引线焊接机)上的悬置(悬置的)半导体器件,这些引线焊接参数例如为最佳阻尼增益(例如,在与以可预测的方式离开芯片的引线焊接工具相关的焊接之后,在力斜降期间的力曲线)、最大芯片建立时间、最大安全接触速度(例如,处于匀速模式中)和最大安全焊接力。可提供为位于悬置半导体器件(例如,悬置半导体芯片)上的每个焊接位置所特有的这种参数。
当(由引线焊接机的焊头组件承载的)引线焊接工具与位于悬置芯片(或另一悬置半导体器件)的未受支承部分上的焊盘(或其它焊接位置)接触时,芯片表面向下偏转。该偏转会在引线焊接和回路成形的情况下导致许多问题,例如当该引线焊接工具在焊接之后升离该芯片表面时由于芯片振动所导致的问题。表征和优化用于悬置芯片的引线焊接过程因此是极其困难和缓慢的。本发明的某些方面涉及自动地实施悬置芯片在引线焊接机上的就地表征和优化。例如,使用z轴编码器反馈和迭代方法,关键的悬置器件特性可被量化,这些特性例如为用于位于悬置芯片上的所有编程位置的最佳阻尼增益、最大芯片建立时间、最大安全接触速度及最大安全焊接力。
根据本发明的某些示例性实施例,利用悬置芯片上的编程焊接位置来教导焊接程序。焊接工具(例如,毛细管)反复地(例如,在将引线接合或不接合在焊接工具中的情况下)降落在带有某些参数的预先限定的初始值的每个编程焊接位置上,这些参数例如为阻尼增益、接触速度(例如,处匀速模式中)和焊接力。z轴编码器数据被用于提供随后被收集和进行分析的数据。这些数据可被与用户限定值(例如,容许芯片偏转量、预期焊接力等)相比较以确定最大芯片偏转量和最大安全焊接力。在随后的迭代中,可确定最大安全接触速度(即,处于匀速模式中)、最佳阻尼增益和最大芯片建立时间。这种过程可被自动地重复进行,直到对于(例如,参考半导体器件上的)所有编程位置均实现了到预期芯片偏转量的收敛,通常每个编程位置6到10次迭代。结果被显示和保存到焊接程序(例如,对于芯片的每个编程焊接位置),从这里,它们可在带电(live)引线焊接期间自动地使用(例如,在主题半导体器件上)。
使用这些具有创造性的技术,可向引线焊接机和用户提供关于悬置器件特性的反馈(例如,瞬时或实时反馈)。由此,对于悬置芯片上的每个焊接位置可自动地确定优化后的关键焊接参数(例如阻尼增益、最大芯片建立时间、接触速度和焊接力)。
在确定用于每个焊接位置的最佳阻尼增益时,该过程应该产生力曲线(例如,在焊接之后的力斜降期间的焊接力对时间的曲线、在焊接之前的初始接触期间的焊接力对时间的曲线等),该力曲线减少了潜在振动,而且维持了最小芯片建立时间,使得在引线焊接期间处理的UPH(即,每小时的移动速率)并不受到负面影响。
在确定(1)焊接期间的最大焊接力和/或(2)用于形成引线焊接的z轴匀速曲线时,引线焊接机的用户可键入悬置芯片的最大偏转量(例如,其中所键入的最大偏转量并不导致诸如悬置芯片撞击位于该悬置芯片下方的弧状连接线之类的问题,其中最大偏转量并不导致损坏该芯片,例如芯片开裂等)。在另一示例中,引线焊接机可自动地确定该悬置芯片的最大偏转量(例如,如由该引线焊接机所确定的并不导致损坏该芯片(例如芯片开裂)的最大偏转值)。在迭代过程期间,引线焊接器(例如,使用引线焊接机的焊头的z轴编码器)测量z轴位置并提供与所施加的焊接力和匀速(CV)曲线相关的z轴位置数据。使用该数据,可以确定最大焊接力和最大CV曲线。
图2示出了在接头(例如,弧状连接线的第一接头,例如形成有无空气球的球形接头)的形成期间引线焊接机的焊头组件的z轴位置(在那里,焊头组件承载该引线焊接工具)。如所属领域技术人员将会了解到的那样,引线焊接机的z轴是引线焊接工具沿其行进的竖直轴(或基本竖直轴)。可使用引线焊接机的z轴编码器或另一种技术来检测该z轴位置。如图2中所示,引线焊接工具沿z轴以匀速模式(图2中的“匀速”)下降。在该下降期间,与该芯片接触(图2中的“与芯片接触”)。由于该芯片的悬置特性,该下降在与芯片接触之后继续进行。随后与所呈现的(declared)该芯片接触(图2中“与所呈现的芯片接触”)并且该“焊接”过程开始。在完成该焊接过程之后,引线焊接工具被连同从焊接力斜降到降低水平的力的力(例如,图2中被示出为“z轴升离”)一起在“焊接结束”之后提升。例如,在焊接期间可施加20克的焊接力,但降低的力可能是2克。就时间而言,尽可能快地实现力斜降会是合乎要求的;然而,由于芯片的悬置特性,导致如图2中所示的芯片振动。在一段时间之后,芯片被建立好(振动停止,参见图2中的“芯片被建立好”)并且该芯片处于平衡位置。问题是芯片振动会导致损坏该悬置芯片(例如,开裂)、损坏被焊接到该悬置芯片的弧状连接线、损坏位于悬置芯片下方的弧状连接线等。
图3基本上类似于图2,不同之处在于在图3中,示出了第二曲线(虚线曲线),其中已调整了力斜降(例如,已经施加了合乎要求的z轴力曲线),使得已经基本减少了芯片振动。也就是说,代替快速移除焊接力(例如,从20克到2克,如在上述示例中那样),施加为该焊接位置所特有的z轴力曲线。例如,在力斜降阶段(在“焊接结束”之后)期间,可利用焊接力的与该实线的曲线相比的更为倾斜缓和的降低,如图3中的曲线的虚线部分中所示。应该平衡该力曲线,使得并不使用过多的时间,从而降低了UPH(每小时的移动速率)。
图4示出了一种在悬置芯片的焊接(将无空气球焊接为弧状连接线的第一接头或隆突)期间的示例性焊接力曲线。该焊接力曲线或该焊接力曲线的任何部分可被称为z轴力曲线。这种焊接力曲线产生了z轴位置曲线(例如图2-3中所示的示例)。图4的焊接力曲线以零值焊接力(未接触,在图4中被示出为“零焊接力”)开始并且在接触时增大,并且以CV(匀速)模式达到峰值撞击力。在无空气球的变形之后,该力略微降低到在图4中的“焊接时间”期间被作为基本均匀的焊接力施加的“焊接力”。随后,“升离时间(TIME TO LIFT OFF)”发生,在该升离时间期间,该力被从“焊接力”斜降到“升离力(LIFT OFF FORCE)”。该力仍保持在该低水平力,使得该悬置芯片能够建立。随后,该力被降低到零焊接力水平。根据本发明的某些示例性实施例,在图4中所示的“升离时间”时期期间(和/或在初始接触期间、在图4中所示的“CV模式期间的峰值撞击力”阶段期间和/或在引线焊接操作的其它部分期间)产生用于每个焊接位置的z轴力曲线,例如以降低如图3中的虚线中所示的振动。
根据本发明的某些示例性实施例,可独立地考虑每个焊接位置,并且产生一种用于那个唯一焊接位置的z轴力曲线(例如,包括在焊接之后的力斜降曲线或在初始撞击期间的力曲线等)。图5A示出了被定位在与悬置芯片相比具有小占地面积(footprint)的底部芯片/垫片上方的简单悬置芯片。该悬置芯片包括三个焊接位置(即,“a”、“b”和“c”)。如图5A中所示,位置“a”和“c”与底部芯片相距距离1.4x,而位置“b”与底部芯片相距较小的距离“x”。由此,该悬置芯片会在位置“b”处往往较为刚性,并且会在均匀力施加的作用下在位置“a”和“c”处偏转更多。在实际焊接期间对于所有焊接位置均施加恒定大小程度的焊接力和CV通常是合乎要求的。由此,如在图5B中的z轴位置曲线(类似于图3的z轴位置曲线)中所示,“焊接”期间的z轴位置对于位置“a”和“c”是较低的,这是因为与位置“b”相比,将相同的焊接力施加到焊接位置“a”和“c”。在图5B中以虚线示出了用于焊接位置“a”和“c”的z轴位置曲线(为简单起见,在图5B中并未示出任何不可接受程度的芯片振动)。但用于焊接位置“a”和“c”的这种较低z轴位置可能涉及不可接受程度的芯片偏转。由此,焊接力斜降(在焊接之后与升离相关的力)可被改变用于焊接位置“a”和“c”。图5C示出了用于位置“b”及位置“a”和“c”的焊接力曲线(其类似于图4中所示的z轴力曲线)。如图5C中所示,用于位置“a”和“c”的力斜降与位置“b”相比是更为倾斜缓慢的。为每个焊接位置所特有的该力斜降允许减少潜在振动。
图5A-5C对于根据本发明的示例性实施例的自动确定(1)焊接期间的最大焊接力和/或(2)用于形成接头的z轴匀速曲线同样是有益的。也就是说,因为不同的焊接位置“a”、“b”和“c”不同程度地偏转,因此对于每个位置的可接受的最大焊接力可能是不同的。在使用用户提供的最大偏转值的情况下,迭代方法被用于以不同水平的焊接力来测量每个焊接位置处的偏转量。随后可确定一种可被用于所有焊接位置的可接受的最大焊接力。可采用该相同的方法以确定可被用于所有焊接位置的可接受的z轴匀速曲线,而不会超过该用户提供的最大偏转值。
图6-9为根据本发明的某些示例性实施例的流程图。如所属领域技术人员所理解的那样,可以省略掉包括在该流程图中的某些步骤;可添加某些附加步骤;并且步骤的顺序可以从所描述的顺序发生改变。
图6是示出了提供在引线焊接操作期间施加到多个焊接位置的z轴力曲线(例如图4或图5C中所示的力曲线)的方法的流程图。在步骤600处,在位于至少一个参考半导体器件的未受支承部分上的多个焊接位置中的每一个处测量z轴振动。例如,可结合确定用于多个焊接位置中的每一个的z轴力曲线,在多个焊接位置中的每一个处以多个z轴力值(例如,使用引线焊接机的焊头的z轴编码器)测量z轴振动。在具体示例中,可结合迭代过程来测量该z轴振动,使得确定用于每个焊接位置的z轴力曲线,该z轴力曲线将导致用于每个焊接位置的合乎要求的z轴偏转曲线(例如,使得包括在z轴偏转曲线中的最大偏转值低于预定阈值)。在步骤602处,使用来自步骤600的z轴振动测量值来确定用于多个焊接位置中的每一个的z轴力曲线(例如,使用该迭代过程以确定导致可接受的z轴偏转曲线的z轴力曲线,其中,可接受的z轴偏转曲线的最大偏转值低于预定阈值)。在步骤604处,在主题半导体器件的随后焊接期间施加在步骤602中确定的z轴力曲线。也就是说,步骤600和602可被结合一个或多个参考半导体器件来实施,并可利用(或不利用)与引线焊接工具接合的引线来实施。在步骤604处,使用在步骤602中确定的z轴力曲线,结合主题半导体器件(例如,生产中的器件)来实施实际的引线焊接。
图7是示出一种确定待在接头的形成期间施加到焊接位置的最大焊接力的方法的流程图。在步骤700处,最大z轴偏转值被提供用于至少一个参考半导体器件。这种最大z轴偏转值可以多种方法提供。在某些示例中,引线焊接机的用户可提供该悬置芯片的最大偏转量,例如:用户可通过测试和实验来确定该最大偏转,使得该最大偏转并不导致诸如以下的问题:(i)该悬置芯片撞击位于该悬置芯片下方的弧状连接线和/或(ii)损坏该芯片,例如芯片开裂。在另一示例中,引线焊接机可自动地确定悬置芯片的最大偏转(例如,并不导致损坏芯片(例如芯片开裂)的最大偏转值,如由引线焊接机通过如下过程所确定的那样,其中,例如使用z轴编码器测试不同的芯片偏转程度,并且可通过该机器来识别芯片开裂,这是因为该芯片在一定量的偏转之后并不适当地恢复)。在步骤702处,在至少一个参考半导体器件上的多个焊接位置处以多个焊接力值测量z轴偏转值。例如,可使用引线焊接机的z轴编码器测量这种偏转值。可结合(或不结合)与引线焊接工具接合的引线来实施步骤702。在步骤704处,确定用于每个焊接位置的最大焊接力:也就是说,来自步骤700的最大偏转值及在步骤702处以多个焊接力值测量到的z轴偏转值被用于确定可接受的最大焊接力值。步骤704可包括将最大焊接力确定为可被施加到每个焊接位置的单个值,或可包括将该最大焊接力确定为多个值,每个焊接位置都具有包括在这多个值中的对应的最大焊接力。
图8是示出了一种确定用于形成接头的z轴匀速曲线(例如,其可以是在预定时间段期间的z轴斜率)的方法的流程图。在步骤800处,提供一种用于半导体器件的最大z轴偏转值。可如上所述结合图7的步骤700提供这种最大z轴偏转值。在步骤802处,在至少一个参考半导体器件上的多个焊接位置处以多个z轴匀速曲线来测量z轴偏转值。如上文中结合图7的步骤702提供的那样,可使用引线焊接机的z轴编码器来测量这种偏转值。在步骤804处,确定用于每个焊接位置的z轴匀速曲线:也就是说,来自步骤800的最大偏转值及在步骤802处以多个z轴匀速曲线测量到的z轴偏转值被用于在步骤804处确定可接受的z轴匀速曲线。步骤704可包括将该z轴匀速曲线确定为一种可被施加到每个焊接位置的单个曲线,或可包括将该z轴匀速曲线确定为多条曲线,每个焊接位置都具有包括在这多条曲线中的对应的z轴匀速曲线。
图9是示出了一种确定最大焊球直径的方法的流程图。在某些引线焊接应用中,无空气球被焊接到焊接位置以形成焊球。该焊球的直径是该引线焊接的重要特性,并可被用作输入以导出用于形成接头的焊接参数(参见例如美国专利申请公开文献No.2012/0074206)。由此,获知在包括悬置芯片应用的给定应用中是可能的最大焊球直径可能是重要的。在步骤900处,确定被施加到焊接位置用于形成接头的最大焊接力。例如,可使用图7中公开的方法来确定该最大焊接力。在步骤902处,确定了用于在该焊接位置处形成接头的z轴匀速曲线。例如,可使用图8中公开的方法来确定z轴匀速曲线。在步骤904处,在计算机上,利用在步骤900中确定的最大焊接力和在步骤902中的Z轴匀速曲线来确定用于该焊接位置的最大焊球尺寸。该计算机例如可以是引线焊接机上的计算机或单独的计算机系统。步骤904可包括使用可通过计算机获取的至少一个数据结构(例如,查阅表、数据库等),其中,数据结构包括与最大焊球尺寸、最大焊接力和z轴匀速曲线相关的值。可通过计算机使用这种数据结构以确定最大焊球尺寸。
尽管在本文中参照具体实施例示出和描述了本发明,但本发明并不旨在受限于所示出的细节。相反,可在权利要求书的等效方案的范围内的细节中作出多种修改,而并不背离本发明。
Claims (20)
1.一种提供于引线焊接操作期间对多个焊接位置施加的z轴力曲线的方法,所述方法包括下列步骤:
(a)确定用于至少一个参考半导体器件的未受支承部分上的多个焊接位置中的每一个的z轴力曲线;以及
(b)在主题半导体器件的随后焊接期间施加所述z轴力曲线。
2.根据权利要求1所述的方法,其中,步骤(a)包括:测量多个焊接位置中的每一个处的z轴振动,以确定用于所述多个焊接位置中的每一个的z轴力曲线。
3.根据权利要求2所述的方法,其中,步骤(a)还包括:测量在多个z轴力值条件下的所述多个焊接位置中的每一个处的z轴振动,以确定用于所述多个焊接位置中的每一个的z轴力曲线。
4.根据权利要求2所述的方法,其中,使用引线焊接机的焊头组件的z轴编码器测量所述z轴振动。
5.根据权利要求2所述的方法,其中,结合迭代过程测量所述z轴振动,使得在步骤(a)处确定的用于所述焊接位置中的每一个的z轴力曲线导致用于所述焊接位置中的每一个的可接受的z轴偏转曲线。
6.根据权利要求5所述的方法,其中,包括在所述z轴偏转曲线中的最大偏转值低于预定阈值。
7.根据权利要求1所述的方法,其中,在步骤(a)中确定的z轴力曲线包括与引线焊接周期的一部分相对应的曲线,所述引线焊接周期的一部分包括在接头形成之后焊接工具的升离。
8.根据权利要求1所述的方法,其中,在步骤(a)中确定的z轴力曲线包括与引线焊接周期的一部分相对应的曲线,所述引线焊接周期的一部分包括无空气球与半导体器件的焊接位置的初始撞击。
9.一种确定最大焊球直径的方法,所述方法包括下列步骤:
(a)确定用于形成接头的焊接位置的最大焊接力;
(b)确定用于在所述焊接位置处形成接头的z轴匀速曲线;以及
(c)在计算机上,使用在步骤(a)中确定的最大焊接力和在步骤(b)中确定的所述z轴匀速曲线,来确定用于所述焊接位置的最大焊球尺寸。
10.根据权利要求9所述的方法,其中,所述计算机是引线焊接机上的计算机。
11.根据权利要求9所述的方法,其中,步骤(c)包括使用至少一个数据结构来确定所述最大焊球尺寸,所述至少一个数据结构包括与最大焊球尺寸以及最大焊接力和z轴匀速曲线相关的值。
12.一种确定有待在引线焊接操作期间对半导体器件的多个焊接位置每个施加的焊接参数的方法,所述方法包括如下步骤:
(a)测量在多个焊接力值条件下至少一个参考半导体器件的多个焊接位置处的z轴偏转值;以及
(b)利用在步骤(a)期间测量的z轴偏转值,自动确定用于所述焊接位置中的每个的焊接参数。
13.根据权利要求12所述的方法,其中,在步骤(b)中确定的焊接参数包括最佳阻尼增益。
14.根据权利要求12所述的方法,其中,在步骤(b)中确定的焊接参数包括最大芯片建立时间。
15.根据权利要求12所述的方法,其中,在步骤(b)中确定的焊接参数包括最佳阻尼增益、最大芯片建立时间、最大安全接触速度和最大安全焊接力中的至少一项。
16.根据权利要求12所述的方法,其中,在步骤(b)中确定的焊接参数包括最佳阻尼增益、最大芯片建立时间、最大安全接触速度和最大安全焊接力中的每一项。
17.根据权利要求12所述的方法,在步骤(a)之前还包括如下步骤:设置对于所述半导体器件的最大z轴偏转值。
18.根据权利要求17所述的方法,其中,设置最大z轴偏转值的步骤包括用户设置最大z轴偏转值。
19.根据权利要求17所述的方法,其中,设置最大z轴偏转值的步骤包括自动确定所述最大z轴偏转值为不会引起半导体器件损伤的值。
20.根据权利要求12所述的方法,其中,步骤(a)包括测量在所述至少一个参考半导体器件的未受支承部分处的多个焊接位置处的z轴偏转值。
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US10665564B2 (en) | 2020-05-26 |
US20170125311A1 (en) | 2017-05-04 |
US20190027463A1 (en) | 2019-01-24 |
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SG10201608922TA (en) | 2017-06-29 |
KR102593242B1 (ko) | 2023-10-25 |
TWI731734B (zh) | 2021-06-21 |
JP6971012B2 (ja) | 2021-11-24 |
CN110695575B (zh) | 2022-06-17 |
KR20170052484A (ko) | 2017-05-12 |
CN107030415A (zh) | 2017-08-11 |
US10121759B2 (en) | 2018-11-06 |
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CN107030415B (zh) | 2020-06-05 |
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TW201727791A (zh) | 2017-08-01 |
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