CN110649100B - 具有经改进rds*cgd的ldmos晶体管及形成所述ldmos晶体管的方法 - Google Patents

具有经改进rds*cgd的ldmos晶体管及形成所述ldmos晶体管的方法 Download PDF

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CN110649100B
CN110649100B CN201910792601.3A CN201910792601A CN110649100B CN 110649100 B CN110649100 B CN 110649100B CN 201910792601 A CN201910792601 A CN 201910792601A CN 110649100 B CN110649100 B CN 110649100B
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CN110649100A (zh
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蔡军
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
CN201910792601.3A 2014-03-06 2015-03-06 具有经改进rds*cgd的ldmos晶体管及形成所述ldmos晶体管的方法 Active CN110649100B (zh)

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Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201461948853P 2014-03-06 2014-03-06
US61/948,853 2014-03-06
US14/556,185 US9455332B2 (en) 2014-03-06 2014-11-30 LDMOS transistor and method of forming the LDMOS transistor with improved Rds*Cgd
US14/556,185 2014-11-30
CN201910792601.3A CN110649100B (zh) 2014-03-06 2015-03-06 具有经改进rds*cgd的ldmos晶体管及形成所述ldmos晶体管的方法
CN201580010177.2A CN106030820B (zh) 2014-03-06 2015-03-06 具有经改进rds＊cgd的ldmos晶体管及形成所述ldmos晶体管的方法
PCT/US2015/019258 WO2015134909A1 (en) 2014-03-06 2015-03-06 Ldmos transistor and method of forming the ldmos transistor with improved rds*cgd

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CN201580010177.2A Active CN106030820B (zh) 2014-03-06 2015-03-06 具有经改进rds＊cgd的ldmos晶体管及形成所述ldmos晶体管的方法

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US (4) US9455332B2 (enExample)
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WO (1) WO2015134909A1 (enExample)

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US20160035822A1 (en) * 2014-07-30 2016-02-04 Freescale Semiconductor, Inc. High Voltage Semiconductor Devices and Methods for their Fabrication
US9893146B1 (en) * 2016-10-04 2018-02-13 Monolithic Power Systems, Inc. Lateral DMOS and the method for forming thereof
US9865729B1 (en) 2016-12-20 2018-01-09 Texas Instruments Incorporated Laterally diffused metal oxide semiconductor with segmented gate oxide
US10103258B2 (en) 2016-12-29 2018-10-16 Texas Instruments Incorporated Laterally diffused metal oxide semiconductor with gate poly contact within source window
US10529804B2 (en) * 2017-08-21 2020-01-07 Texas Instruments Incorporated Integrated circuit, LDMOS with trapezoid JFET, bottom gate and ballast drift and fabrication method
US10103233B1 (en) 2017-09-29 2018-10-16 Nxp Usa, Inc. Transistor die with drain via arrangement, and methods of manufacture thereof
CN116759455A (zh) * 2018-05-25 2023-09-15 矽力杰半导体技术(杭州)有限公司 横向扩散金属氧化物半导体器件和其制造方法
US10672903B2 (en) * 2018-07-25 2020-06-02 Nxp Usa, Inc. Semiconductor device with drain active area
CN114256131B (zh) * 2020-09-23 2025-08-19 无锡华润上华科技有限公司 半导体结构的制备方法及半导体结构
US11658240B2 (en) 2020-10-04 2023-05-23 Globalfoundries Singapore Pte. Ltd. Semiconductor transistors on multi-layered substrates
CN114122113B (zh) * 2022-01-27 2022-05-03 江苏游隼微电子有限公司 一种高可靠的mosfet功率半导体器件结构
US12336220B2 (en) 2022-02-24 2025-06-17 Globalfoundries Singapore Pte. Ltd. Extended-drain metal-oxide-semiconductor devices with a gap between the drain and body wells
CN121001375A (zh) * 2025-10-21 2025-11-21 合肥晶合集成电路股份有限公司 一种ldmos器件的制备方法及ldmos器件

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CN106030820B (zh) 2019-09-24
US11610968B2 (en) 2023-03-21
US20230215918A1 (en) 2023-07-06
US20150255596A1 (en) 2015-09-10
US9455332B2 (en) 2016-09-27
CN106030820A (zh) 2016-10-12
CN110649100A (zh) 2020-01-03
WO2015134909A1 (en) 2015-09-11
US20160365412A1 (en) 2016-12-15
JP2017507502A (ja) 2017-03-16
US10461156B2 (en) 2019-10-29
US20200066842A1 (en) 2020-02-27
JP6574792B2 (ja) 2019-09-11

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