CN110642287B - 一种立方相In2O3微纳米球结构合成方法 - Google Patents
一种立方相In2O3微纳米球结构合成方法 Download PDFInfo
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- CN110642287B CN110642287B CN201910947867.0A CN201910947867A CN110642287B CN 110642287 B CN110642287 B CN 110642287B CN 201910947867 A CN201910947867 A CN 201910947867A CN 110642287 B CN110642287 B CN 110642287B
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CN201910947867.0A CN110642287B (zh) | 2019-10-08 | 2019-10-08 | 一种立方相In2O3微纳米球结构合成方法 |
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CN111517366B (zh) * | 2020-06-05 | 2022-05-03 | 济南大学 | 一种MoO3自组装空心球结构的制备方法 |
CN111735857A (zh) * | 2020-07-07 | 2020-10-02 | 华准科技(绍兴)有限公司 | 负载Ru的In2O3纳米材料及其制备方法和应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102134092A (zh) * | 2011-02-17 | 2011-07-27 | 四川大学 | 具有次级结构的中空球和花状氧化铟的简易制备方法及应用 |
CN106186048A (zh) * | 2016-07-20 | 2016-12-07 | 济南大学 | 一种立方体组成的分级结构氧化铟微球的制备方法 |
CN109999836A (zh) * | 2019-04-28 | 2019-07-12 | 大连工业大学 | 一种氧化铟/硫化铟异质结半导体材料的制备及光催化剂用途及太阳能固氮应用 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN102134092A (zh) * | 2011-02-17 | 2011-07-27 | 四川大学 | 具有次级结构的中空球和花状氧化铟的简易制备方法及应用 |
CN106186048A (zh) * | 2016-07-20 | 2016-12-07 | 济南大学 | 一种立方体组成的分级结构氧化铟微球的制备方法 |
CN109999836A (zh) * | 2019-04-28 | 2019-07-12 | 大连工业大学 | 一种氧化铟/硫化铟异质结半导体材料的制备及光催化剂用途及太阳能固氮应用 |
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Inventor after: Ma Qian Inventor after: Chu Shushu Inventor after: Li Hui Inventor after: Li Xing Inventor after: Guo Jia Inventor after: Wang Yi Inventor after: Lin Ziqiong Inventor after: Zhang Qi Inventor after: Yang Ping Inventor before: Chu Shushu Inventor before: Li Hui Inventor before: Ma Qian Inventor before: Li Xing Inventor before: Guo Jia Inventor before: Wang Yi Inventor before: Lin Ziqiong Inventor before: Zhang Qi Inventor before: Yang Ping |
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