CN110573662A - 热屏蔽部件、单晶提拉装置及单晶硅锭的制造方法 - Google Patents

热屏蔽部件、单晶提拉装置及单晶硅锭的制造方法 Download PDF

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Publication number
CN110573662A
CN110573662A CN201880022285.5A CN201880022285A CN110573662A CN 110573662 A CN110573662 A CN 110573662A CN 201880022285 A CN201880022285 A CN 201880022285A CN 110573662 A CN110573662 A CN 110573662A
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CN
China
Prior art keywords
single crystal
heat shield
shield member
silicon
ingot
Prior art date
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Pending
Application number
CN201880022285.5A
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English (en)
Chinese (zh)
Inventor
梶原薰
末若良太
仓垣俊二
田边一美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenggao Co Ltd
Sumco Corp
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Shenggao Co Ltd
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Filing date
Publication date
Application filed by Shenggao Co Ltd filed Critical Shenggao Co Ltd
Publication of CN110573662A publication Critical patent/CN110573662A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201880022285.5A 2017-04-05 2018-03-16 热屏蔽部件、单晶提拉装置及单晶硅锭的制造方法 Pending CN110573662A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017075534A JP6304424B1 (ja) 2017-04-05 2017-04-05 熱遮蔽部材、単結晶引き上げ装置および単結晶シリコンインゴットの製造方法
JP2017-075534 2017-04-05
PCT/JP2018/010519 WO2018186150A1 (ja) 2017-04-05 2018-03-16 熱遮蔽部材、単結晶引き上げ装置および単結晶シリコンインゴットの製造方法

Publications (1)

Publication Number Publication Date
CN110573662A true CN110573662A (zh) 2019-12-13

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880022285.5A Pending CN110573662A (zh) 2017-04-05 2018-03-16 热屏蔽部件、单晶提拉装置及单晶硅锭的制造方法

Country Status (7)

Country Link
US (1) US11473210B2 (ja)
JP (1) JP6304424B1 (ja)
KR (1) KR102253607B1 (ja)
CN (1) CN110573662A (ja)
DE (1) DE112018001896T5 (ja)
TW (1) TWI664326B (ja)
WO (1) WO2018186150A1 (ja)

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CN110965118A (zh) * 2019-12-25 2020-04-07 西安奕斯伟硅片技术有限公司 一种导流筒装置和拉晶炉
US11618971B2 (en) 2020-09-29 2023-04-04 Sumco Corporation Method and apparatus for manufacturing defect-free monocrystalline silicon crystal

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CN112680788B (zh) * 2019-10-17 2022-02-01 上海新昇半导体科技有限公司 一种半导体晶体生长装置
US11873575B2 (en) * 2020-11-30 2024-01-16 Globalwafers Co., Ltd. Ingot puller apparatus having heat shields with voids therein

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JP2000327479A (ja) * 1999-05-26 2000-11-28 Komatsu Electronic Metals Co Ltd 単結晶製造装置及び単結晶製造方法
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TW200404922A (en) * 2002-09-18 2004-04-01 Sumitomo Mitsubishi Silicon Thermal shield device in apparatus for pulling silicon monocrystal
JP2004123516A (ja) * 2002-09-13 2004-04-22 Toshiba Ceramics Co Ltd 単結晶引上装置
JP2013075785A (ja) * 2011-09-30 2013-04-25 Globalwafers Japan Co Ltd 単結晶引上装置の輻射シールド
CN204277217U (zh) * 2014-08-08 2015-04-22 位元奈米科技股份有限公司 一字激光光源的蚀刻装置
CN105239150A (zh) * 2015-09-10 2016-01-13 上海超硅半导体有限公司 单晶硅生长炉用导流筒及其应用

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SG64470A1 (en) * 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
JP2000032747A (ja) * 1998-07-09 2000-01-28 Canon Inc スイッチング電源装置
KR100358029B1 (ko) 2000-08-16 2002-10-25 미쯔비시 마테리알 실리콘 가부시끼가이샤 열 차폐 부재 및 이를 이용한 실리콘 단결정 인상 장치
US7077905B2 (en) 2002-09-13 2006-07-18 Toshiba Ceramics Co., Ltd. Apparatus for pulling a single crystal
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JP5302556B2 (ja) 2008-03-11 2013-10-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置及びシリコン単結晶の製造方法
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CN1341168A (zh) * 1999-02-26 2002-03-20 Memc电子材料有限公司 拉晶机用的热屏蔽装置
JP2000327479A (ja) * 1999-05-26 2000-11-28 Komatsu Electronic Metals Co Ltd 単結晶製造装置及び単結晶製造方法
JP2004123516A (ja) * 2002-09-13 2004-04-22 Toshiba Ceramics Co Ltd 単結晶引上装置
TW200404922A (en) * 2002-09-18 2004-04-01 Sumitomo Mitsubishi Silicon Thermal shield device in apparatus for pulling silicon monocrystal
JP2013075785A (ja) * 2011-09-30 2013-04-25 Globalwafers Japan Co Ltd 単結晶引上装置の輻射シールド
CN204277217U (zh) * 2014-08-08 2015-04-22 位元奈米科技股份有限公司 一字激光光源的蚀刻装置
CN105239150A (zh) * 2015-09-10 2016-01-13 上海超硅半导体有限公司 单晶硅生长炉用导流筒及其应用

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110965118A (zh) * 2019-12-25 2020-04-07 西安奕斯伟硅片技术有限公司 一种导流筒装置和拉晶炉
CN110965118B (zh) * 2019-12-25 2022-04-15 西安奕斯伟材料科技有限公司 一种导流筒装置和拉晶炉
US11618971B2 (en) 2020-09-29 2023-04-04 Sumco Corporation Method and apparatus for manufacturing defect-free monocrystalline silicon crystal
TWI802023B (zh) * 2020-09-29 2023-05-11 日商Ｓｕｍｃｏ股份有限公司 製造無缺陷單晶矽結晶的方法和裝置

Also Published As

Publication number Publication date
KR102253607B1 (ko) 2021-05-18
DE112018001896T5 (de) 2019-12-19
JP6304424B1 (ja) 2018-04-04
TW201837246A (zh) 2018-10-16
WO2018186150A1 (ja) 2018-10-11
US11473210B2 (en) 2022-10-18
KR20190120316A (ko) 2019-10-23
US20200224327A1 (en) 2020-07-16
TWI664326B (zh) 2019-07-01
JP2018177560A (ja) 2018-11-15

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