JP4453756B2 - 結晶育成方法 - Google Patents
結晶育成方法 Download PDFInfo
- Publication number
- JP4453756B2 JP4453756B2 JP2007335974A JP2007335974A JP4453756B2 JP 4453756 B2 JP4453756 B2 JP 4453756B2 JP 2007335974 A JP2007335974 A JP 2007335974A JP 2007335974 A JP2007335974 A JP 2007335974A JP 4453756 B2 JP4453756 B2 JP 4453756B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- carbon
- raw material
- pulling
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Crystals, And After-Treatments Of Crystals (AREA)
Description
2 プルチャンバ
3 坩堝
4 ヒータ
5 保温筒
6 支持軸
7 引き上げ軸
8 種結晶
10 炭素粉末
11 多結晶原料
12 原料融液
13 単結晶
Claims (1)
- CZ法を用いてシリコン単結晶を育成する結晶育成方法において、育成結晶中の炭素濃度が1×1016atoms/cm3以上となるように炭素がドープされたシリコン融液より単結晶を引き上げる結晶育成方法であって、坩堝内でシリコンの多結晶原料を溶解してシリコン融液を生成する際に、坩堝の内底面上に炭素粉末を投入し、その後に多結晶原料を装填することを特徴とする結晶育成方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007335974A JP4453756B2 (ja) | 2007-12-27 | 2007-12-27 | 結晶育成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007335974A JP4453756B2 (ja) | 2007-12-27 | 2007-12-27 | 結晶育成方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP36770297A Division JP4688984B2 (ja) | 1997-12-26 | 1997-12-26 | シリコンウエーハ及び結晶育成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008088056A JP2008088056A (ja) | 2008-04-17 |
JP4453756B2 true JP4453756B2 (ja) | 2010-04-21 |
Family
ID=39372575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007335974A Expired - Fee Related JP4453756B2 (ja) | 2007-12-27 | 2007-12-27 | 結晶育成方法 |
Country Status (1)
Country | Link |
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JP (1) | JP4453756B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7306536B1 (ja) | 2022-06-14 | 2023-07-11 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
-
2007
- 2007-12-27 JP JP2007335974A patent/JP4453756B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2008088056A (ja) | 2008-04-17 |
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