CN110546759A - 用于扩散焊接的焊料成型件、制造焊料成型件的方法和装配焊料成型件的方法 - Google Patents

用于扩散焊接的焊料成型件、制造焊料成型件的方法和装配焊料成型件的方法 Download PDF

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Publication number
CN110546759A
CN110546759A CN201880026907.1A CN201880026907A CN110546759A CN 110546759 A CN110546759 A CN 110546759A CN 201880026907 A CN201880026907 A CN 201880026907A CN 110546759 A CN110546759 A CN 110546759A
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CN
China
Prior art keywords
solder
diffusion
molding
layer
paste
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CN201880026907.1A
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English (en)
Inventor
C.谢伦伯格
J.斯特罗吉斯
K.威尔克
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Siemens AG
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Siemens AG
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Publication of CN110546759A publication Critical patent/CN110546759A/zh
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244Powders, particles or spheres; Preforms made therefrom
    • B23K35/025Pastes, creams, slurries
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/19Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0233Sheets, foils
    • B23K35/0238Sheets, foils layered
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244Powders, particles or spheres; Preforms made therefrom
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262Sn as the principal constituent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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    • B23K35/302Cu as the principal constituent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/16Layered products comprising a layer of metal next to a particulate layer
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    • BPERFORMING OPERATIONS; TRANSPORTING
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    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

本发明涉及一种用于扩散焊接的焊料成型件(11)。所述焊料成型件由金属箔(12)组成,具有颗粒(15)的膏料(16)保持在所述箔之间。颗粒例如可以由焊接材料组成,而箔(12)例如由铜构成。由此在形成焊接连接时,在扩散区中产生扩散焊接连接的金属间化合物。使用膏料制备焊料成型件(11)中的夹层结构的优点在于,简化了制造并且膏料(16)可以在一定程度上确保公差补偿。本发明除了焊料成型件(11)之外也涉及用于制造这种焊料成型件的方法和用于与所述焊料成型件形成扩散焊接连接的方法。

Description

用于扩散焊接的焊料成型件、制造焊料成型件的方法和装配 焊料成型件的方法
本发明涉及一种用于扩散焊接的具有夹层结构(以下简称为夹层)的焊料成型件(Lotformteil),所述夹层结构由第一种材料的第一层和第二种材料的第二层组成,其中,第一层和第二层在夹层中相互交替。此外,本发明涉及一种用于制造焊料成型件的方法,在所述方法中,第一种材料的第一层和第二种材料的第二层分层地堆叠成夹层,其中,第一层和第二层在夹层中相互交替。最后,本发明也涉及一种用于接合扩散焊接连接的方法,在所述方法中,将焊料成型件放置在第一接合配对体与第二接合配对体之间并且在使焊料成型件熔化以形成扩散焊接连接。
由DE 10 2013 219 642 A1例如已知将扩散焊接连接用于装配两个接合配对体。当在接合配对体之间形成扩散焊接连接时,由于扩散过程而形成焊接连接,所述焊接连接具有金属间相,所述金属间相具有比其余的由焊接合金构成的焊接连接更高的熔点。由此能够在热学和机械上稳定接合配对体之间的连接。
接合配对体例如可以提供由铜制成的接触材料。扩散焊料可以是包含锡的焊接材料。通过铜在形成焊接连接期间扩散到焊接材料中而形成扩散区,所述扩散区由铜与锡之间的金属间化合物构成。所述金属间化合物具有约420°的熔点,因此所述熔点明显地处于基于锡的焊接材料的熔点之上。由于必要的扩散过程,扩散区不能任意深地进入焊接材料中。因此,待形成的焊接连接被限制在确定的厚度上。因此按照DE 10 2013 219 642 A1建议,至少一个接合配对体这样设计,使得在接合配对体之间的接合缝隙的区域中形成空腔。所述空腔例如可以通过在接合配对体之一的装配面中设置凹处而形成。所述空腔在接合时用作缓冲腔,多余的焊接材料可以逃逸到所述空腔中,由此即使在出现量的公差时也能够在接合配对体之间确保缝隙宽度,所述缝隙宽度保证在接合缝的整个宽度上可靠地形成扩散区。
此外,按照D.Feil的“Fügekonzepte für Leistungsmodule an(用于冷却体上的功率模块的接合方案)”,Elektronische Baugruppen und Leiterplatten(电子构件和电路板),60–64页,Berlin,Offenbach,2016已知,在形成扩散焊接连接时,如果将柔性的成型件、例如铜网置入接合缝隙中,也可以在接合配对体之间跨接较大的接合缝隙。在接合缝隙上可以放置焊接箔,其中,焊接材料在液化时填充柔性成型件之间的间隙。在此,成型件提供了能够扩散到焊接材料中的物质。由于扩散的物质不只通过接合配对体的边界面提供,而且也在焊接连接内部提供,所以即使在接合缝隙较大时也能够在接合配对体之间形成连续的扩散区。
Feil也描述了形成扩散焊接连接的另一可能性,其中取代柔性的成型件使用金属粉末,例如铜粉末。所述铜粉末被掺入焊接材料中并且在焊接材料中分布开地提供了能够扩散到焊接连接中以形成扩散区的材料。由此也能够在焊接连接中产生跨接两个接合配对体之间的缝隙的扩散区。
按照US 2009/004500A1已知,两个接合配对体之间的扩散焊接连接可以通过组成部分在焊接期间从液相扩散到固相中产生。在此,在接合配对体之间使用包含双组分的焊接材料。为了能够建立焊接连接,将焊料成型件放置在接合配对体之间,所述焊料成型件由第一组分和第二组分的层组成的夹层构成。由此能够将用于扩散的元素的扩散路径保持得尽可能短,从而在接合配对体之间形成机械稳定的连接。
焊料成型件的使用在建立焊接连接时要求较高精确度,因为所述焊接连接必须接触两个接合配对体以形成可靠的触点接通并且正在形成的焊接连接中的扩散路径不能过大。这种精确度与一定的制造耗费(例如与待接合表面的较高平行性)和由此产生的成本相关联。
本发明所要解决的技术问题在于,提供用于扩散焊接的焊料成型件(或称为焊料预成型件或焊料预制件)、用于制造焊料成型件的方法和用于在两个接合配对体之间装配焊料成型件的方法,其中,通过所述焊料成型件能够成本低廉地并且以改善的过程能力建立焊接连接。
该技术问题按本发明通过本文开头所述的成型件由此解决,即第一种材料设计为金属箔(或称为金属膜),所述第一层由所述金属箔组成。第二种材料由金属颗粒组成,所述金属颗粒与粘合剂形成膏料,其中,第二层由所述膏料组成。由此能够由第一种材料和第二种材料在当焊接时形成的焊接连接内产生扩散区,其优选由金属间化合物组成。在此,膏料可以有利地用作公差补偿,因为膏料可以在焊接之前变形并且因此焊料成型件可以作为整体沿接合方向被压缩。在此,膏料部分地从处于两个相邻的箔之间的间隙中被挤出。此外,膏料在焊接过程期间经历一定程度的体积收缩,因为粘合剂在焊接过程期间从焊接连接中逸出。然而,体积收缩有助于补偿制造公差和装配公差,因为体积收缩在一定限度内是可变的。
按照本发明的一种有利的设计方案规定,所述第一种材料是焊接材料(或称为焊料)并且第二种材料具有比第一种材料更高的熔点。第一种材料例如可以是基于锡的焊接材料(尤其是锡银铜焊料,例如SAC305,其具有合金组成SN96.5Ag3Cu0.5;或者锡铜焊料,例如具有合金组成Sn99.3Cu0.7),而第二种材料是金属,其溶解在锡材料中并且可以扩散到锡材料中,优选是铜。铜材料随即借助粘合剂例如通过丝网印刷方法固定在由第一种材料制成的箔之间,其中,颗粒材料的扩散路径通过由焊接材料制成的箔的厚度确定。
按照本发明的另一设计方案也可以规定,所述第二种材料是焊接材料并且第一种材料具有比第二种材料更高的熔点。在此例如可以将由第一种材料制成的箔设计得非常薄,其中,将以焊接材料形式的第二种材料涂覆到箔上。尤其能够使用本身已知的丝网印刷方法。
本文开头所述的技术问题按照本发明也通过用于制造焊料成型件的方法由此解决,即,第一种材料设计为金属箔,所述第一层由所述金属箔制成,并且第二种材料由金属颗粒组成,所述金属颗粒与粘合剂被加工成膏料(Paste),其中,第二层由膏料制成。在实施该方法时的益处已经提及。有利地可以将由膏料组成的第二种材料轻易地涂覆到形式为金属箔的第一种材料上,其中,例如使用丝网印刷方法。由此涂层的箔随即可以有利地分层堆叠成夹层结构或者说多层结构。涂层的箔的数量确定夹层结构的厚度,其中,可以在考虑到待形成的焊接连接的缝隙尺寸的情况下确定所述厚度。在此如已经阐述的那样,需要考虑到在形成焊接连接时的收缩尺寸,夹层结构的高度必须比待跨接的缝隙尺寸多出所述收缩尺寸。
特别有利的是,同时制造多个焊料成型件,方式为制造具有比焊料成型件更大的面积的夹层结构并且从所述夹层结构中分离出焊料成型件。换而言之,制造大面积的半成品,所述半成品尤其能够通过丝网印刷方法特别简单地制造。接下来将所述半成品分割为焊料成型件。这例如可以通过冲压或者激光切割实现。焊料成型件可以大量地制造并且例如可以在用于电子器件装配的生产线上提供用于电路载体上的装载。
就此而言,所述技术问题通过本文开头所述的用于接合扩散焊接连接的方法由此解决,即,使用已经阐述的类型的焊料成型件。特别有利的是,使用的焊料成型件具有考虑到焊接材料的收缩的过量。此外,可以规定考虑到扩散焊接连接的公差的过量,所述过量尤其被叠加在所述考虑到焊接材料的收缩的过量上。由此能够有利地以较高的可靠性制造具有公差的扩散焊接连接,其中,为此目的可以使用能够成本低廉地制造并且能够大量地在装配过程中提前加工出的焊料成型件。尤其能够以对于电子器件装配普遍适用的公差要求来产生扩散焊接连接的接合,因此可以将扩散焊接连接的产生集成到电子器件装配的正常的过程中。由此能够有利地实现特别经济的技术解决方案。
本发明的其它细节在以下根据附图描述。相同或者相应的附图元素分别配设有相同的附图标记并且只在各个单独附图之间的区别方面多次阐述。在附图中:
图1和图2以横截面示意性地示出按照本发明的焊料成型件的实施例,
图3至图5以剖视图示出按照本发明的用于制造焊料成型件的方法的实施例的选取的方法步骤,并且
图6和图7以剖视图或者侧视图示出按照本发明的用于接合扩散焊接连接的方法的实施例的选取的方法步骤。
按照图1的焊料成型件11由多个第一层12和多个第二层13组成,所述第一层和第二层交替地布置(显示在分隔线17的左侧)。第一层12由金属箔14组成,所述金属箔按照图1由焊接材料、例如锡银铜合金(或者其它基于锡的合金)制成。第二层13由膏料组成,其中,颗粒15分布在粘合剂16中。颗粒15由铜构成。备选地,颗粒也可以由镍构成。
在图1中,在分隔线17的右侧示出在焊料成型件11的成功进行焊接过程之后的扩散焊接连接。在图1中没有示出连接在上部接合面18和下部接合面19上的接合配对体。然而可以看出的是,第二层13只由金属铜构成并且具有相对于分隔线17左侧的第二层13更小的厚度,因为不再存在粘合剂16。由此总体上形成收缩量Δz,所述收缩量确定待形成的扩散焊接连接的高度。在确定焊料成型件11的所需厚度时必须考虑所述收缩量Δz。
然而,第二层13的厚度的减小还有其它的原因。也就是一部分铜扩散到第一层12中,从而在此形成扩散区。所述扩散区至少部分由金属间相组成,所述金属间相一方面包含焊接材料的材料并且另一方面包含所述颗粒的材料并且在机械和热学上稳定了焊接连接。在图1中,第一层12完全由金属间化合物构成。
按照图2示出焊料成型件11的夹层结构的另一实施例。第一层12在此由铜制的箔14构成,而第二层13由膏料形成,所述膏料由含锡的焊接材料颗粒15和粘合剂16组成。对于图1和图2适用的是,分别形成上部接合面18和下部接合面19的最上层和最下层分别由焊接材料构成,从而能够实现与邻接的接合配对体的连接(参见图6)。
在图3至图5中示出用于制造按照图1的焊料成型件11的选取的方法步骤。但按照图2的焊料成型件也能够以相同方式制造。
在图3中示出,为了更简单地制造焊料成型件11(也可以参见图5),通过掩膜20和刮板21以丝网印刷技术用膏料为箔14涂层,所述膏料由颗粒15和粘合剂16组成。以此方式形成半成品28,所述半成品可以在按照图4的下个步骤中分层地堆叠,直至达到半成品28的所需厚度d(参见图5)。为了确保按照图1的第一层12和第二层13的结构,最后还需要将一层不具有膏料的箔14放置在最上部的半成品28上。
由按照图4的夹层结构可以按照图5地制造多个焊接半成品11,方式为例如通过锯、冲压工具或者刀22将焊接半成品分隔开。所述刀22(或者冲压工具或者锯)沿着所示的点划线将按照图4的夹层结构切割为具有所要求的尺寸的焊接半成品11。
在图6中示出如何能够由焊料成型件建立扩散焊接连接23,所述扩散焊接连接将第一接合配对体24与第二接合配对体25以及第三接合配对体26连接。按照图6的第一接合配对体24指的是功率半导体构件,它们通过扩散焊接连接23固定在电路板的第二接合配对体25上。此外,第一接合配对体24在对置的上侧同样具有扩散焊接连接23,所述扩散焊接连接与第三接合配对体26、即形式为盖的陶瓷构件电连接。在图6中还示出,第一接合配对体的高度可能由于公差t而变化。因此,按照图6的扩散焊接连接23厚度不同,其中,可以分别通过第二层(在图6中没有显示)实现公差补偿,所述第二层可以在接合配对体接合时与公差相关地更强烈地或者不太强烈地被压缩。
在图7中以更高的细节化程度示出形式为构件的第一接合配对体24如何能够通过扩散焊接连接与形式为电路板的第二接合配对体25连接。第一接合配对体24和第二接合配对体25均具有由铜构成的金属化结构27,焊料成型件11与所述金属化结构邻接(交界)。在焊接时,金属化结构27的材料扩散到正在形成的扩散焊接连接中并且在该处参与金属间相在扩散区中的形成(未示出)。
在焊接过程期间,焊料成型件11熔化,其中,出现收缩量Δz。在此,第一接合配对体24降低了量Δz。然而,没有在图7中详细示出的第二层允许最多降低smax,因此在建立扩散焊接连接时可以附加地补偿由于制造和装配公差产生的公差范围t。在此需要考虑的是,由于存在公差t,第一接合配对体24也可能降低小于Δz的值,其中,在这种情况下也还形成了具有足够品质的扩散焊接连接。

Claims (9)

1.一种用于扩散焊接的焊料成型件,具有夹层结构,所述夹层结构由第一种材料的第一层(12)和第二种材料的第二层(13)组成,其中,第一层(12)和第二层(13)在夹层结构中相互交替,其特征在于,第一种材料设计为金属箔(14),所述第一层(12)由所述金属箔组成,并且第二种材料由金属颗粒(15)组成,所述颗粒与粘合剂(16)形成膏料,其中,第二层由所述膏料组成。
2.按权利要求1所述的焊料成型件,其特征在于,所述第一种材料是焊接材料并且第二种材料具有比第一种材料更高的熔点。
3.按权利要求1所述的焊料成型件,其特征在于,所述第二种材料是焊接材料并且第一种材料具有比第二种材料更高的熔点。
4.一种用于制造焊料成型件(11)的方法,在所述方法中,第一种材料的第一层(12)和第二种材料的第二层(13)分层地堆叠成夹层结构,其中,第一层(12)和第二层(13)在夹层结构中相互交替,其特征在于,第一种材料设计为金属箔(14),所述第一层由所述金属箔制成,并且第二种材料由金属颗粒(15)组成,所述颗粒与粘合剂(16)被加工成膏料,其中,第二层(13)由所述膏料制成。
5.按权利要求4所述的方法,其特征在于,用所述膏料对箔(14)进行涂层,之后将这样涂层的箔(14)分层地堆叠成夹层结构。
6.按权利要求4或5所述的方法,其特征在于,同时制造多个焊料成型件(11),方式为制造具有比焊料成型件(11)更大的面积的夹层结构并且从所述夹层结构中分离出焊料成型件(11)。
7.一种用于接合扩散焊接连接(23)的方法,在所述方法中,将焊料成型件(11)放置在第一接合配对体(24)与第二接合配对体(25)之间并且使焊料成型件(11)熔化以形成扩散焊接连接(23),其特征在于,使用按权利要求1至3之一所述的焊料成型件(11)。
8.按权利要求7所述的方法,其特征在于,使用具有考虑到焊接材料的收缩(Δz)的过量的焊料成型件(11)。
9.按权利要求7所述的方法,其特征在于,使用具有考虑到扩散焊接连接的公差的过量(t)的焊料成型件(11)。
CN201880026907.1A 2017-04-25 2018-04-19 用于扩散焊接的焊料成型件、制造焊料成型件的方法和装配焊料成型件的方法 Pending CN110546759A (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03184694A (ja) * 1989-12-11 1991-08-12 Tdk Corp 半田シート並びにその貼着方法
CN1907635A (zh) * 2005-08-05 2007-02-07 富士电机电子设备技术株式会社 无铅焊料
US20110304985A1 (en) * 2008-12-23 2011-12-15 Martin Rittner Electrical or electronic composite component and method for producing an electrical or electronic composite component
JP2013013933A (ja) * 2011-06-30 2013-01-24 Rohm Co Ltd 積層化高融点半田層およびその形成方法、および半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19930190C2 (de) * 1999-06-30 2001-12-13 Infineon Technologies Ag Lötmittel zur Verwendung bei Diffusionslötprozessen
JP2001085832A (ja) * 1999-09-13 2001-03-30 Omron Corp 電子部品実装構造とその実装方法
DE20320259U1 (de) * 2002-02-06 2004-04-01 Endress + Hauser Gmbh + Co. Kg Lot und Lotverbindung
US7565996B2 (en) * 2004-10-04 2009-07-28 United Technologies Corp. Transient liquid phase bonding using sandwich interlayers
US20090004500A1 (en) 2007-06-26 2009-01-01 Daewoong Suh Multilayer preform for fast transient liquid phase bonding
AT10735U1 (de) * 2008-05-21 2009-09-15 Austria Tech & System Tech Verfahren zur herstellung einer leiterplatte sowie verwendung und leiterplatte
DE102010013610B4 (de) * 2010-03-22 2013-04-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum stoffschlüssigen Verbinden von elektronischen Bauelementen oder Kontaktelementen und Substraten
US8431445B2 (en) * 2011-06-01 2013-04-30 Toyota Motor Engineering & Manufacturing North America, Inc. Multi-component power structures and methods for forming the same
DE102011083926A1 (de) * 2011-09-30 2013-04-04 Robert Bosch Gmbh Schichtverbund aus einer Trägerfolie und einer Schichtanordnung umfassend eine sinterbare Schicht aus mindestens einem Metallpulver und eine Lotschicht
DE102013219642A1 (de) 2013-09-27 2015-04-02 Siemens Aktiengesellschaft Verfahren zum Diffusionslöten unter Ausbildung einer Diffusionszone als Lötverbindung und elektronische Baugruppe mit einer solchen Lötverbindung
WO2017134974A1 (ja) * 2016-02-01 2017-08-10 株式会社村田製作所 接合材、それを用いた接合方法及び接合構造

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03184694A (ja) * 1989-12-11 1991-08-12 Tdk Corp 半田シート並びにその貼着方法
CN1907635A (zh) * 2005-08-05 2007-02-07 富士电机电子设备技术株式会社 无铅焊料
US20110304985A1 (en) * 2008-12-23 2011-12-15 Martin Rittner Electrical or electronic composite component and method for producing an electrical or electronic composite component
JP2013013933A (ja) * 2011-06-30 2013-01-24 Rohm Co Ltd 積層化高融点半田層およびその形成方法、および半導体装置

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