CN110546708A - 快闪存储器的编程电路、编程方法及快闪存储器 - Google Patents

快闪存储器的编程电路、编程方法及快闪存储器 Download PDF

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Publication number
CN110546708A
CN110546708A CN201780032233.1A CN201780032233A CN110546708A CN 110546708 A CN110546708 A CN 110546708A CN 201780032233 A CN201780032233 A CN 201780032233A CN 110546708 A CN110546708 A CN 110546708A
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Prior art keywords
programming
memory cell
transistor
voltage
flash memory
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CN110546708B (zh
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王井舟
倪红松
王明
王腾锋
宁丹
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Chengdu Analog Circuit Technology Inc
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Chengdu Analog Circuit Technology Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/16—Flash programming of all the cells in an array, sector or block simultaneously
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

本发明涉及一种快闪存储器的编程电路及编程方法，该编程电路包括串联的编程晶体管和存储单元，所述编程晶体管的栅极接字线，存储单元的栅极连接控制栅，所述编程晶体管的一端与位线相连，另一端与所述存储单元的一端相连，存储单元的另一端与源线相连。通过本发明编程电路和方法对快闪存储器进行编程，可以在不增加沟道电流的情况下，提高后段编程的效率，从而提高整个编程过程的效率，缩短总的编程时间，提高闪存性能。

Description

PCT国内申请，说明书已公开。

Claims (13)

  1. PCT国内申请，权利要求书已公开。
CN201780032233.1A 2017-12-15 2017-12-15 快闪存储器的编程电路、编程方法及快闪存储器 Active CN110546708B (zh)

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PCT/CN2017/116346 WO2019113921A1 (zh) 2017-12-15 2017-12-15 快闪存储器的编程电路、编程方法及快闪存储器

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CN110546708A true CN110546708A (zh) 2019-12-06
CN110546708B CN110546708B (zh) 2023-04-21

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US (1) US10964391B2 (zh)
KR (1) KR102252531B1 (zh)
CN (1) CN110546708B (zh)
TW (1) TWI697777B (zh)
WO (1) WO2019113921A1 (zh)

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CN112201295A (zh) * 2020-09-11 2021-01-08 中天弘宇集成电路有限责任公司 Nand闪存编程方法

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US10403361B2 (en) 2007-11-29 2019-09-03 Zeno Semiconductor, Inc. Memory cells, memory cell arrays, methods of using and methods of making

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CN102623049A (zh) * 2011-01-27 2012-08-01 北京兆易创新科技有限公司 一种非易失性存储单元及其数据编程、读取、擦除方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112201295A (zh) * 2020-09-11 2021-01-08 中天弘宇集成电路有限责任公司 Nand闪存编程方法

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US20190189219A1 (en) 2019-06-20
KR20190073310A (ko) 2019-06-26
KR102252531B1 (ko) 2021-05-14
WO2019113921A1 (zh) 2019-06-20
TWI697777B (zh) 2020-07-01
US10964391B2 (en) 2021-03-30
CN110546708B (zh) 2023-04-21
TW201933109A (zh) 2019-08-16

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