CN110494976B - 包含电感器的堆叠半导体裸片及相关的方法 - Google Patents

包含电感器的堆叠半导体裸片及相关的方法 Download PDF

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CN110494976B
CN110494976B CN201880024131.XA CN201880024131A CN110494976B CN 110494976 B CN110494976 B CN 110494976B CN 201880024131 A CN201880024131 A CN 201880024131A CN 110494976 B CN110494976 B CN 110494976B
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die
substrate
inductor
inductors
pads
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CN110494976A (zh
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仲野英一
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Micron Technology Inc
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Micron Technology Inc
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Abstract

本发明技术的若干实施例涉及半导体装置、包含半导体装置的系统以及制造及操作半导体装置的方法。在一些实施例中，一种半导体装置包括：衬底；第一裸片，其安装到所述衬底且包含第一电感器；及第二裸片，其在偏移位置中安装到所述第一裸片且包含第二电感器。所述第一电感器在所述第一裸片的作用侧处，且所述第二电感器在所述第二裸片的作用侧处。所述第一电感器的至少一部分接近且电感耦合到所述第二电感器。所述半导体装置进一步包括：第一多个互连件，其将所述衬底电耦合到所述第一裸片；及第二多个互连件，其将所述第二裸片电耦合到所述衬底。所述第一多个互连件从所述衬底的上表面延伸到所述第一裸片的所述作用侧，且所述第二多个互连件从所述第二裸片的所述作用侧延伸到所述衬底的下表面。

Description

包含电感器的堆叠半导体裸片及相关的方法
技术领域
本发明大体上涉及半导体装置，且更特定地说，涉及包含电感器的半导体裸片。
背景技术
半导体装置通常提供于具有多个已连接裸片的封装中，其中各种裸片的电路元件以各种方式连接。举例来说，多裸片封装可利用从每一裸片到插入件的焊线在不同裸片中的元件之间提供连接。虽然有时需要不同裸片中的电路元件之间的直接电连接，但在其它状况下，可能需要无线地(例如，经由电感耦合、电容耦合或其类似方法)连接来自不同裸片的元件。为了促进不同裸片中的电路元件之间的无线通信，线圈可设置于裸片上，使得多裸片堆叠中的邻近裸片可具有无线地通信的接近线圈。
提供用于无线通信的线圈的一种方法涉及以堆叠的面对背布置将两个裸片封装于半导体封装中，使得每一裸片上的线圈分离个别裸片的厚度。此方法通常涉及充分薄化裸片以减小一个裸片上的线圈与邻近裸片上的对应线圈之间的距离。然而，通过此方法，线圈之间的距离仍相对较大，这是因为裸片仍需要足够厚以维持最小强度以供在制造工艺期间处置。为了补偿此厚度且确保裸片之间的足够数据传输，线圈的大小趋向于增大，这进而增加封装中的裸片的成本且需要在裸片上占据额外空间。另外，因为裸片经薄化，因此其相对较弱且较易于破裂或破碎，进而降低总制造良率且增加不必要的成本。因此，需要提供具有用于无线通信的线圈的半导体装置的其它方法。
附图说明
图1A为根据本发明技术的实施例的具有电感器的半导体装置的横截面示意图。
图1B为根据本发明技术的实施例的沿图1A的线1B-1B截取的图1A中所展示的半导体装置的示意性顶部平面图。
图1C为根据本发明技术的实施例的图1A中所展示的半导体装置的放大部分的示意性横截面图。
图1D为根据本发明技术的实施例的沿图1C的线1D-1D截取的图1A中所展示的半导体装置的电感器的示意性俯视图。
图2A到2D为根据本发明技术的实施例的形成半导体装置的方法的示意性横截面图。
图3及4为根据本发明技术的其它实施例的具有电感器的半导体装置的示意性横截面图。
图5为包含根据本发明技术的实施例配置的半导体裸片总成的系统的示意图。
具体实施方式
在以下描述中，论述众多具体细节以提供对本发明技术的实施例的透彻及能够实现的描述。然而，所属领域的技术人员将认识到，本发明可在无此些具体细节中的一或多个的情况下实践。在其它情况下，未展示或未详细描述通常与半导体装置相关联的熟知结构或操作，以免混淆技术的其它方面。一般来说，应理解，除了本文中所揭示的那些具体实施例之外，各种其它装置、系统及方法也可在本发明技术的范围内。
如上文所论述，由于对半导体封装中的裸片之间的无线通信的需要越来越高，半导体装置被不断地设计。因此，根据本发明技术的半导体装置的若干实施例可将前侧线圈设置于以面对面布置来布置的邻近半导体裸片上，所述前侧线圈可将无线通信提供到邻近裸片，同时仅消耗半导体装置的相对较小面积。在一些实施例中，一种半导体装置包括：衬底；第一裸片，其安装到衬底且包含第一电感器；及第二裸片，其在偏移位置中安装到第一裸片且包含第二电感器。第一电感器在第一裸片的作用侧处，且第二电感器在第二裸片的作用侧处。第一电感器的至少一部分电感耦合到第二电感器。半导体装置进一步包括：第一多个互连件，其将衬底电耦合到第一裸片；及第二多个互连件，其将第二裸片电耦合到衬底。第一多个互连件从衬底的上表面延伸到第一裸片的作用侧，且第二多个互连件从第二裸片的作用侧延伸到衬底的下表面。
图1A为沿图1B的线1A-1A截取的半导体装置100(“装置100”)的示意性横截面图，且图1B为沿图1A的线1B-1B截取的装置100的示意性顶部平面图。一同参考图1A及1B，装置100包含具有上表面112a及与上表面112a相对的下表面112b的封装衬底110(“衬底110”)，及附接到衬底110的上表面112a的裸片的堆叠。衬底110可包含重布结构、插入件、印刷电路板、介电隔片、另一半导体裸片(例如，逻辑裸片)或相关技术中已知的另一合适衬底。衬底110可由适用于半导体处理方法的数种衬底材料中的任一种形成，所述衬底材料包含硅、玻璃、砷化镓、氮化镓、有机积层板及其类似物。另外，用于存储器、控制器、处理器及其类似者的集成电路可形成于衬底110上及/或形成于衬底110中。在所说明的实施例中，衬底包含上表面112a处的第一多个衬底焊垫158及下表面112b处的第二多个衬底焊垫154。裸片的堆叠可包含安装于衬底110上方的第一裸片120a及安装于第一裸片120a上方的第二裸片120b。
第一裸片120a及第二裸片120b是以面对面布置来布置，使得第一裸片120a的作用侧面朝第二裸片120b的作用侧。另外，第二裸片120b在偏移位置中安装于第一裸片120a上方，使得第二裸片120b的侧向边缘144延伸超出第一裸片120a的侧向边缘143达第一宽度(W1)。因而，第二裸片120b的部分129a(例如，第一周边部分)突出于第一裸片120a之上。类似地，在第一裸片120a及第二裸片120b的相对端部处，第一裸片120a的部分129b(例如，第二周边部分)延伸超出第二裸片120b达第二宽度(W2)。在一些实施例中，第一宽度(W1)与第二宽度(W2)可为相等的。第一裸片120a及第二裸片120b可各自具有集成电路或组件、数据存储元件、处理组件及/或制造于半导体衬底上的其它特征。举例来说，第一裸片120a及第二裸片120b可包含集成式存储器电路及/或逻辑电路，且可包含各种类型的半导体组件及功能性特征，例如动态随机存取存储器(DRAM)、静态随机存取存储器(SRAM)、快闪存储器、其它形式的集成电路存储器、处理电路、成像组件及/或其它半导体特征。在一些实施例中，第一裸片120a及第二裸片120b可为均质或相同的(例如，制造为具有相同设计及规格的存储器裸片)，而在其它实施例中，半导体裸片120a到120b可彼此不同(例如，不同类型的存储器裸片或控制器、逻辑及/或存储器裸片的组合)。
第一裸片120a包含第一侧121a(例如，前侧或作用侧)及与第一侧121a相对的第二侧121b(例如，背侧)。类似地，第二裸片120b包含面向第一裸片120a的第一侧121a的第一侧122a(例如，前侧或作用侧)及与第二裸片120b的第一侧122a相对的第二侧122b(例如，背侧)。第二裸片120b的第一周边部分129a及第一裸片120a的第二周边部分129b经暴露以使得其可由焊线存取。第一裸片120a进一步包含在第一侧121a的第二周边部分129b处的第一多个裸片焊垫156，且第二裸片120b进一步包含在第一侧122a的第一周边部分129a处的第二多个裸片焊垫155。在一些实施例中，除了先前所描述的焊垫之外或作为所述焊垫的替代，第一裸片120a及/或第二裸片120b可包含在其前侧及/或背侧上的金属迹线。
装置100可进一步包含(a)至少部分地形成于第一裸片120a的第二侧121b与衬底110的上表面112a之间的第一裸片附接材料140，及(b)至少部分地形成于第一裸片120a的第一侧121a与第二裸片120b的第一侧122a之间的第二裸片附接材料142。第一裸片附接材料140及第二裸片附接材料142可为(例如)粘着膜(例如，裸片附接膜)、环氧树脂、胶带、糊状物或其它合适材料。在一些实施例中，第一裸片附接材料140及第二裸片附接材料142为相同材料及/或具有基本上相同的厚度。如图1A的实施例中所展示，第二裸片附接材料142延伸到第一裸片120a的侧向边缘143，且因此不延伸到第二裸片120b的第一周边部分129a上。然而，在其它实施例中，第二裸片附接材料142可至少部分地在第一周边部分129a上方延伸。同样，在第一裸片120a及第二裸片120b的相对端部处，第二裸片附接材料142可延伸到第二裸片120b的边缘，或至少部分地延伸到第一裸片120a的第二周边部分129b上。
装置100进一步包含多个电感器(例如，线圈)。第一裸片120a包含在第一裸片120a的第一侧121a处的多个第一电感器125a，且第二裸片120b包含在第二裸片120b的第一侧121a处的多个第二电感器125b。在图1A的所说明实施例中，第一裸片120a及第二裸片120b是以面对面布置来布置，且因此第一电感器125a及第二电感器125b定位成彼此接近。第一裸片120a上的第一电感器125a的至少一部分大体上与第二裸片120b上的第二电感器125b对准。在一些实施例中，第一电感器125a可包含与第二电感器125b对准的电感器(例如，作用电感器)的第一部分及不与第二电感器125b对准的电感器(例如，非作用或孤立电感器)的第二部分。在图1A的所说明实施例中，举例来说，第一裸片120a的最外第一电感器125a中的一个不与对应第二电感器125b对准，且第二裸片120b的最外第二电感器125b中的一个不与对应第一电感器125a对准。对准的第一电感器125a及第二电感器125b经电感耦合(示意性地展示为130)且能够无线地在彼此之间且因此在第一裸片120a与第二裸片120b之间传达数据。
衬底110、第一裸片120a及第二裸片120b经由多个互连件(例如，焊线、导电链路、贯穿衬底通孔(TSV)等等)电耦合到彼此。装置100包含将衬底110电耦合到第一裸片120a的第一多个互连件150及将衬底110电耦合到第二裸片120b的第二多个互连件152。第一多个互连件150在第一侧121a处在衬底110的上表面112a处的第一多个衬底焊垫158与第一裸片110a的第二周边部分129b处的对应第一多个裸片焊垫156之间延伸。在一些实施例中，第一多个互连件150可在衬底110与第一裸片120a及/或第二裸片120b之间递送功率及/或数据信号。在图1A的所说明实施例中，衬底110(或例如第一裸片120a的上表面)上方的第一多个互连件150(例如，焊线)的最大高度不大于衬底110上方的第二裸片120b的高度。也就是说，第一多个互连件150不向上延伸超出与第二裸片120b的上表面共面的平面。第二多个互连件152在第一侧122a处在衬底110的下表面112b处的第二多个衬底焊垫154与第二裸片110b的第一周边部分129a处的对应第二多个裸片焊垫158之间延伸。在一些实施例中，第二多个互连件152可在衬底110与第二裸片120b及/或第一裸片120a之间递送功率及/或数据信号。虽然图1A的所说明实施例展示了在衬底110的端部处在侧向边缘145上方延伸的第二多个互连件152，但在一些实施例中，第二多个互连件152可至少部分地延伸穿过衬底110。在此类实施例中，衬底110的侧向边缘145将至少延伸超出第一裸片120a的侧向边缘143，且第二多个互连件152将延伸穿过衬底110的窗(例如，孔)。
尽管图1B的所说明实施例展示了第一多个衬底焊垫158中的每一个与对应第一多个裸片焊垫之间的个别焊线，但在一些实施例中，个别焊线也可在个别衬底焊垫158之间及/或在个别裸片焊垫156之间延伸。举例来说，个别衬底焊垫158可经由焊线直接地电耦合到彼此，且个别裸片焊垫156可经由焊线直接地电耦合到彼此。类似地，个别焊线也可在个别衬底焊垫154及/或个别裸片焊垫158之间延伸。举例来说，个别衬底焊垫154可经由焊线直接地电耦合到彼此，且个别裸片焊垫156可经由焊线直接地电耦合到彼此。另外，在一些实施例中，并非每一衬底焊垫158皆可直接地电耦合到裸片焊垫156。
装置100可进一步包含囊封(例如，密封)衬底110的至少一部分、第一裸片120a及/或第二裸片120b且保护此些组件中的一或多个免受污染及/或物理损坏的囊封体170(例如，模制材料)。第一多个互连件150及第二多个互连件152至少部分地由囊封体170囊封。在图1A的所说明实施例中，第一多个互连件150被完全囊封，且第二多个互连件152仅被部分地囊封。然而，在一些实施例中，装置100的高度(例如，厚度)及在装置100中使用的囊封体170的总量可减少。举例来说，囊封体170可仅延伸到裸片的最上结构的仅略微上方，或延伸到最外裸片(例如，第二裸片120b)的最外表面，借此暴露最外裸片的上部分(例如，第二裸片120b的第二侧122b)。减少装置100中的囊封体170的量可降低装置100响应于改变的温度而变形的倾向。详细地说，囊封体大体上具有高于硅半导体裸片的热膨胀系数(CTE)。因此，通过减小囊封体170的高度来减小囊封体170的体积可减小装置100的总平均CTE(例如，通过增大由第一裸片120a及第二裸片120b占据的相对体积)。
此外，在一些实施例中，囊封体170可至少部分地填充从第一裸片120a突出的第二裸片120b的第一周边部分129a下方的空间。囊封体170可因此支撑第一周边部分129a以防止第二半导体裸片120b由于外力而造成的变形或其它损坏。此外，在衬底110为不包含预成型衬底的重布结构的实施例中，囊封体也可为装置100提供所要结构强度。举例来说，囊封体170可经选择以在外力被施加到装置100时防止装置100变形、弯曲等等。因此，在一些实施例中，重布结构可制成极薄的(例如，小于50μm)，这是由于重布结构无需提供具有极大结构强度的装置100。因此，装置100的总高度(例如，厚度)可进一步减小。
装置100可进一步包含经配置以将装置电耦合到外部封装部位的电连接器160(例如，焊球、导电凸块、导电柱、导电环氧树脂及/或其它合适导电元件)。在一些实施例中，电连接器160在衬底110的下表面112b上形成球栅阵列。在某些实施例中，可省略电连接器160，且下表面112b可直接连接到外部装置或电路。
图1C为沿图1D的线1C-1C截取的装置100的放大部分的示意性横截面图，且图1D为沿图1C的线1D-1D截取的装置100的电感器的示意性俯视图。一同参考图1C及1D，第一电感器125a及第二电感器125b可各自包括一或多个线圈，所述一或多个线圈包含收发器线圈133及接收器线圈135。收发器线圈133及接收器线圈135可为平坦的或彼此垂直偏移，且可包含与标准半导体金属化工艺兼容的数种导电材料中的任一种，包含铜、金、钨或其合金。第一电感器125a及第二电感器125b是由导体(例如，导电迹线)形成。如图1D的所说明实施例中所展示，第一电感器125a的收发器线圈133包含沿扭曲路径连接的第一端部134a及第二端部134b。类似地，第一电感器125a的接收器线圈135包含沿类似扭曲路径连接的第一端部136a及第二端部136b。收发器线圈133的第一端部134a及第二端部134b中的每一个及接收器线圈135的第一端部136a及第二端部136b中的每一个可连接到第一裸片120a的电路。收发器线圈133及接收器线圈135各自包含约一又四分之三匝(例如，路径围绕第一端部134a、136a旋转约540°)。第一电感器125a及第二电感器125b各自包含线圈直径
Figure GDA0002227111660000061
且分别与个别第一裸片120a及第二裸片120b的作用表面分离。举例来说，第一电感器125a在第一侧121a处与第一裸片120a的作用表面127a分离第一距离(D1)，且第二电感器125b在第一侧122a处与第二裸片120b的作用表面128a分离第二距离(D2)。因而，第一电感器125a及第二电感器125b分别嵌入于第一裸片120a及第二裸片120b中，且彼此分离第一距离(D1)、第二距离(D2)及第一裸片附接材料140的厚度。如下文更详细地解释，第一距离(D1)及第二距离(D2)可取决于装置100的特定设计需要及/或线圈直径
Figure GDA0002227111660000062
而变化。
尽管图1D的所说明实施例中的第一电感器125a包含约二又二分之一匝，但在其它实施例中，线圈的匝数可变化。举例来说，两个线圈之间的电感耦合的效率可取决于电感器的匝数，使得增加匝数可准许在第一电感器125a与第二电感器125b之间进行较高效的无线通信(例如，借此增大线圈可通信的距离)。然而，如所属领域的技术人员将易于理解的，增加匝数一般会(例如，在减小迹线的大小及间隔不可行的情况下)增大由电感器消耗的面积，使得可基于线圈间隔、无线通信效率及电路面积之间的所要平衡而选择线圈的匝数。
另外，尽管图1C的实例中的第一电感器125a及第二电感器125b中的每一个已说明为具有相同直径
Figure GDA0002227111660000071
但在其它实施例中，邻近裸片(例如，电感耦合的面对面裸片)中的无线通信电感器无需具有相同大小(例如，或形状)。举例来说，第一裸片上的电感器可具有任何大小，包含约80与600微米之间，且第二裸片上的电感器可具有选自同一范围的不同大小。尽管匹配无线通信线圈的线圈大小可实现空间的最高效使用及最小材料成本，但在一些实施例中，一侧上的空间限制可能使得需要具有不同大小的线圈。举例来说，可能需要在第一裸片(或第一裸片的作用侧)上提供较大电感器，这是因为第一裸片(或第一裸片的作用侧)上的空间限制并不与相关联紧密置放(例如)电路元件的第二裸片(或第二裸片的作用侧)上的空间限制一样苛刻。这可促进较容易对准或实现略微较佳耦合，而不增大对应第一电感器125a及/或第二电感器125b的大小。
本发明技术的一个优点为，第一裸片120a及第二裸片120b的厚度并非数据传输的限制因素。不同于裸片厚度需要相对较薄以确保足够数据传输的以面对背布置在裸片之间进行无线通信的传统方法，本文中所揭示的面对面布置将第一电感器125a及第二电感器125b安置成接近彼此接近，使得其不分离第一裸片125a及/或第二裸片125b的厚度。因此，很大程度上避免了与传统使用的薄裸片相关联的问题，包含破裂或破碎。
本发明技术的另一优点为，可基于线圈直径而设计裸片。如先前所提及，用于电感耦合的传统系统及方法(例如，面对背布置)的缺陷为每一裸片上的线圈的大小必须相对较大，这是因为邻近裸片上的线圈至少分离裸片中的一个的厚度。因此，需要增大线圈的大小，这增加了材料成本、制造时间及裸片上由线圈占据的空间。本发明技术通过以下操作来解决此问题：以面对面布置置放线圈，借此减小线圈的大小(例如，直径或厚度)，以及材料成本、制造时间及裸片上的占据空间。
图2A到2D为说明形成半导体装置200(“装置200”)的方法的示意性横截面图。大体而言，半导体装置(例如，装置100)可制造(例如)为离散元件或较大晶片或面板。在晶片级或面板级制造中，较大半导体装置在经单体化以形成多个个别装置之前形成。为了易于解释及理解，图2A到2D说明单一装置的制造。然而，所属领域的技术人员将理解，半导体装置的制造可按比例调整成晶片级及/或面板级，也就是说，包含更多组件以便能够单体化成多于一个半导体装置，同时包含类似特征且使用如本文中所描述的类似工艺。
首先参考图2A，装置200包含第一裸片120a，第一裸片120a安置于衬底110上，使得第一裸片120a的侧向边缘142与衬底110的对应侧向边缘对准。如先前描述，衬底110包含上表面112a处的第一多个衬底焊垫158及下表面112b处的第二多个衬底焊垫154。第一裸片120a包含第一侧121a处的第一多个裸片焊垫156及第一侧121a处的第一多个电感器125a。第一裸片120a通过基本上覆盖第一裸片120a的第二侧121b的第一裸片附接材料140附接到衬底110。在第一裸片120a安置到衬底110上之前，第一裸片附接材料140可形成于第一裸片120a的第二侧121b上方。替代地，在第一裸片120a安置到衬底110上之前，第一裸片附接材料140可形成于衬底的上表面112a上方。
图2B展示在(a)第二裸片120b已安置于第一裸片120a上方及(b)衬底110已经由第一多个互连件150电耦合到第一裸片120a之后的装置200。将第二裸片120b安置于第一裸片120a上方包含将第二裸片120b与第一裸片120a对准，使得第一裸片120a上的第一电感器125a的至少一部分与第二裸片120b上的对应第二电感器125b对准。在一些实施例中，第一裸片120a可包含第一侧121a处的多个对准标记(未图示)以确保第一电感器125a与对应第二电感器125b的至少一部分对准。第二裸片120b可包含第一侧122a处的类似或相同对准标记。
第二裸片120b可经由第二裸片附接材料142附接到第一裸片120a的至少一部分。第二裸片附接材料144可大体上类似于或等同于第一裸片附接材料140。在图2B的所说明实施例中，第二裸片附接材料142不在第二裸片120b的第一周边部分129a上方延伸，或从所述第一周边部分129a移除。在一些实施例中，第二裸片附接材料142的确在第一周边部分129a上方延伸。在此类实施例中，在将第二多个裸片焊垫155电耦合到第二多个裸片焊垫154之前，第二裸片附接材料142从第二裸片120b的第二多个裸片焊垫155剥落或以其它方式从所述第二多个裸片焊垫155移除，或被阻止覆盖所述第二多个裸片焊垫155(图2C)。
制造装置200进一步包含经由第一多个互连件150将第一多个衬底焊垫158电耦合到第一多个裸片焊垫156。在第二裸片120b安置于第一裸片120a上方之后，或在一些实施例中在第二裸片120b安置之前，第一多个互连件150可直接地耦合到第一多个衬底焊垫158及第一多个裸片焊垫156。如先前描述，第一多个互连件150可将功率提供到第一裸片120a，且经由第一电感器125a及第二电感器125b间接地将功率提供到第二裸片120b。
如图2C中所展示，制造装置200包含(a)翻转装置，及(b)将第二裸片120b电耦合到衬底110。将第二裸片120b电耦合到衬底110可包含将第二多个互连件152在衬底110的下表面112b处的第二多个衬底焊垫154与第二裸片120b的第一侧122a处的第二多个裸片焊垫155之间延伸。如先前参考图1A所描述，衬底110的侧向边缘145可延伸超出第一裸片120a的侧向边缘143，且第二多个互连件152可延伸穿过衬底110中的窗而非围绕衬底110的侧向边缘，如图2C中所展示。第二多个互连件152可将数据信号提供到衬底110及第二裸片120b/从衬底110及第二裸片120b提供数据信号，且间接地将数据信号提供到衬底110及第一裸片120a/从衬底110及第一裸片120a提供数据信号。在一些实施例中，在翻转装置200以保护第二裸片120b及装置200上的其它组件免受在半导体制造工艺期间可能发生的损坏(例如，物理损坏)之前，保护膜(未图示)可安置于第二裸片120b的第二侧122b上方。
图2D展示在(a)再次翻转装置200及(b)将囊封体170安置于衬底110的上表面112a上方且至少部分地围绕第一裸片120a及第二裸片120b、第一多个互连件150及第二多个互连件152之后的装置200。囊封体170可由树脂、环氧树脂、基于硅酮的材料、聚酰亚胺及/或在相关技术中使用或已知的其它合适树脂形成。在沉积后，囊封体170可由UV光、化学硬化剂、热或在相关技术中已知的其它合适烘烤方法烘烤。尽管在图2D的所说明实施例中，囊封体170包含大体上与衬底110的上表面112a共面从而暴露多个互连件152的下表面171b，但在其它实施例中，囊封体170的下表面171b可大体上与衬底110的下表面112b共面，且借此至少部分地囊封多个互连件152。在又其它实施例中，囊封体170可具有完全不同的形状(例如，圆角轮廓、不规则边缘形状等等)。可在单一步骤中，或在其中沉积囊封体且接着研磨以按需要平坦化的多个步骤中形成囊封体170。
图3为根据本发明技术的另一实施例的半导体装置300(“装置300”)的示意性横截面图。更具体来说，此实施例说明为具有多于两个堆叠的半导体裸片。装置300包含大体上类似于先前所描述的装置100的特征。举例来说，装置300包含衬底110、安置于衬底110上方的第一裸片120a、以侧向偏移的面对面布置安置于第一裸片120上方的第二裸片120b、将衬底110电耦合到第一裸片120a的第一多个互连件150及将衬底110电耦合到第二裸片120b的第二多个互连件152。
装置300进一步包含第三半导体裸片320a(“第三裸片320a”)及在侧向偏移位置中安置于第三裸片320a上方的第四半导体裸片320b(“第四裸片320b”)。第三裸片320a及第四裸片320b的结构、功能及空间定向可大体上类似于或等同于先前所描述的第一裸片120a及第二裸片120b的那些结构、功能及空间定向。举例来说，第三裸片320a及第四裸片320b是以面对面布置来布置，使得第三裸片320a的作用侧面朝第四裸片320b的作用侧。另外，第四裸片320b在偏移位置中安装于第三裸片320a上方，使得第四裸片320b的侧向边缘在第二裸片120b延伸超出第一裸片120a的相同方向上延伸超出第三裸片320a的侧向边缘达第三宽度(W3)。因而，第四裸片320b的部分329a(例如，第三周边部分)从第三裸片320a突出。类似地，在第三裸片320a及第四裸片320b的相对端部处，第三裸片320a的部分329b(例如，第四周边部分)延伸超出第四裸片320b达第四宽度(W4)。第三宽度(W3)及第四宽度(W4)可彼此相等，及/或等于第一宽度(W1)及第二宽度(W2)。
第三裸片320a包含第一侧321a(例如，前侧或作用侧)及与第一侧321a相对的第二侧321b(例如，背侧)。类似地，第四裸片320b包含面向第三裸片320a的第一侧322a的第一侧322a(例如，前侧或作用侧)及与第四裸片320b的第一侧322a相对的第二侧322b(例如，背侧)。在第四裸片320b的第一侧322b处的第四裸片320b的第三周边部分329a被暴露，且第三裸片320a的第四周边部分329b被暴露。第三裸片320a进一步包含在第一侧321a的第四周边部分329b处的第三多个裸片焊垫356，且第四裸片320b进一步包含在第一侧322a的第三周边部分329a处的第四多个裸片焊垫358。在一些实施例中，除了先前所描述的焊垫之外或作为所述焊垫的替代，第三裸片320a及/或第四裸片320b可包含在其前侧及/或背侧上的金属迹线。
装置300可进一步包含至少部分地形成于第三裸片320a的第二侧321b与第二裸片120b的第二侧122b之间的第三裸片附接材料340，及至少部分地形成于第三裸片320a的第一侧321a与第四裸片320b的第一侧322a之间的第四裸片附接材料342。第三裸片附接材料340及第四裸片附接材料342可为(例如)粘着膜(例如，裸片附接膜)、环氧树脂、胶带、糊状物或其它合适材料。在一些实施例中，第三裸片附接材料340及第四裸片附接材料342为相同材料及/或具有基本上相同的厚度，且可类似于或等同于先前所描述的第一裸片附接材料140及第二裸片附接材料142。如图3的实施例中所展示，第四裸片附接材料342可仅在第三裸片320a与第四裸片320b之间延伸。在其它实施例中，第四裸片附接材料342可至少部分地延伸到第四裸片320的第三周边部分329a及/或第三裸片320a的第四周边部分329b上。
装置300进一步包含多个电感器(例如，线圈)。第三裸片320a包含在第三裸片320a的第一侧321a处的多个第三电感器325a，且第四裸片320b包含在第四裸片320b的第一侧321a处的多个第四电感器325b。在图3的所说明实施例中，第三裸片320a及第四裸片320b是以面对面布置来布置，且因此多个第三电感器325a及第四电感器325b定位成彼此接近。第三裸片320a上的第三电感器325a的至少一部分大体上与第四裸片320b上的第四电感器325b对准。在一些实施例中，第三电感器325a可包含与第四电感器325b对准的电感器(例如，作用电感器)的第一部分及不与第四电感器325b对准的电感器(例如，非作用或孤立电感器)的第二部分。在图3的所说明实施例中，举例来说，第三裸片320a的最外第三电感器325a中的一个不与对应第四电感器325b对准，且第四裸片320b的最外第四电感器325b中的一个不与对应第三电感器325a对准。对准的第三电感器325a及第四电感器325b经电感耦合(示意性地展示为330)且能够无线地在彼此之间且因此在第三裸片320a与第四裸片320b之间传达数据。
衬底110以及第一裸片120a、第二裸片120b、第三裸片320a及第四裸片320b经由多个互连件电耦合到彼此。除了第一多个互连件150及第二多个互连件152之外，装置300也包含(a)将第一裸片120a电耦合到第三裸片320a且间接地电耦合到衬底110的第三多个互连件350，及(b)将第四裸片320b电耦合到第二裸片120b且间接地电耦合到衬底110的第四多个互连件352。第三多个互连件350在第一裸片120a的第二周边部分129b处的第一多个裸片焊垫156与第三裸片310a的第四周边部分329b处的对应第三多个裸片焊垫356之间延伸。除了第三多个互连件之外或作为其替代，第三裸片320a可经由另外多个互连件直接地电耦合到衬底110。在一些实施例中，第三多个互连件350可在第一裸片120a与(a)第三裸片320a及/或(b)第四裸片320b之间递送功率及/或数据信号。在图3的所说明实施例中，第三多个互连件350不向上延伸超出与第四裸片320b的上表面共面的平面。第四多个互连件352在第二裸片120b的第一周边部分129a处的第二多个裸片焊垫158与第四裸片310b的第三周边部分329a处的对应第四多个裸片焊垫358之间延伸。在一些实施例中，第四多个互连件352可在第四裸片320b与(a)第二裸片320b及/或(b)衬底110之间递送功率及/或数据信号。除了第四多个互连件之外或作为其替代，第四裸片320b可经由另外多个互连件直接地电耦合到衬底110。
如先前描述，第一多个衬底焊垫158及第二多个衬底焊垫154及/或第一多个裸片焊垫156及第二多个裸片焊垫158可在多个配置中电耦合到彼此。类似地，第三多个裸片焊垫356及第四多个裸片焊垫358可在多个配置中电耦合到第一多个衬底焊垫158及第二多个衬底焊垫154及/或第一多个裸片焊垫156及第二多个裸片焊垫158。举例来说，个别衬底焊垫356可经由焊线直接地电耦合到彼此，且个别裸片焊垫358可经由焊线直接地电耦合到彼此。另外，在一些实施例中，并非每一个别裸片焊垫356皆可直接地电耦合到对应裸片焊垫156，而是可经由另一裸片焊垫356间接地耦合到裸片焊垫156。类似地，并非每一个别裸片焊垫358皆可直接地电耦合到对应裸片焊垫158，而是可经由另一裸片焊垫358间接地耦合到裸片焊垫158。
尽管图3的所说明实施例仅展示四个裸片的堆叠(例如，120a到120b及320a到320b)，但所属领域的一般技术人员将理解，在类似配置中可安装额外裸片。举例来说，可包含六个裸片、八个裸片、十个裸片等等的堆叠。因而，本发明技术的优点为能够将多个裸片并入初始双裸片堆叠上方的双裸片堆叠中，而无需更改初始双裸片堆叠的配置。
装置300可进一步包含囊封(例如，密封)衬底110的至少一部分、第一裸片120a、第二裸片120b、第三裸片320a及/或第四裸片320b的囊封体370(例如，模制材料)。在
图3的所说明实施例中，第一多个互连件150、第三多个互连件350及第四多个互连件352由囊封体370囊封，且第二多个互连件152仅部分地由囊封体370囊封。囊封体370可大体上类似于先前所描述的囊封体170。
图4为根据本发明技术的另一实施例的半导体装置400(“装置400”)的示意性横截面图。更具体来说，装置400包含与第一堆叠配置405a间隔开的第二堆叠配置405b。第一堆叠配置405a可对应于先前所描述的装置100，且第二堆叠配置405b可对应于在结构、功能及空间定向上大体类似于装置100的装置。在所说明实施例中，第二堆叠配置405b绕跨越第一堆叠配置405a与第二堆叠配置405b之间的垂直轴线490反射地等同于第一堆叠配置。第二堆叠配置405b包含衬底410、安置于衬底410上方的第三裸片420a及以偏移面对面布置安置于第三裸片420上方的第四裸片420b。第四裸片420b从第三裸片420a偏移，使得部分(例如，第五周边部分)429a朝向第一堆叠布置405b延伸。第三裸片420a包含多个第三电感器425a，且第四裸片420b包含多个第四电感器425b。第三电感器425a的至少一部分电感耦合到第四电感器425b。装置300进一步包含将衬底410电耦合到第三裸片420a的第三多个互连件450，及将第三裸片420b电耦合到第五周边部分429a处的衬底410的第四多个互连件452。
上文参考图1A到4所描述的半导体装置中的任一个可并入到多种较大及/或较复杂系统中的任一个中，其代表性实例为在图5中示意性地展示的系统590。系统590可包含半导体装置500(“装置500”)、电源592、驱动器594、处理器596及/或其它子系统或组件598。装置500可包含大体上类似于上文所描述的那些装置的特征。所得系统590可执行广泛多种功能中的任一个，例如存储器存储、数据处理及/或其它合适功能。因此，代表性系统590可包含但不限于手持型装置(例如，移动电话、平板计算机、数字阅读器及数字音频播放器)、计算机及器具。系统590的组件可容纳于单一单元中或遍及多个互连单元(例如，经由通信网络)而分布。系统590的组件也可包含远程装置及广泛多种计算机可读媒体中的任一个。
本发明并不意欲为穷尽性的或将本发明技术限制为本文中所揭示的精确形式。尽管本文出于说明的目的揭示了具体实施例，但如所属领域的一般技术人员将认识到，可在不背离本发明技术的情况下进行各种等效修改。在一些状况下，未展示或详细地描述熟知结构及功能以避免不必要地混淆本发明技术的实施例的描述。尽管本文中可以特定次序呈现方法的步骤，但替代实施例可以不同次序执行所述步骤。类似地，在其它实施例中，可合并或消除在特定实施例的情形下揭示的本发明技术的某些方面。此外，虽然可在那些实施例的情形下揭示与本发明技术的某些实施例相关联的优点，但其它实施例也可展现此类优点，且并非全部实施例皆必须展现此类优点或本文中所揭示的其它优点以落入技术的范围内。因此，本发明及相关联技术可涵盖本文未明确展示或描述的其它实施例，且本发明只受随附权利要求书限制。
除非上下文以其它方式明确指示，否则在本发明中，单数术语“一(a/an)”及“所述(the)”包含复数参照物。类似地，在提及两项或多于两项的列表时，除非明确地限制字语“或”仅意谓排除其它项的单个项，否则所述列表中使用“或”应解释为包含(a)所述列表中的任何单个项，(b)所述列表中的所有项，或(c)所述列表中各项的任何组合。另外，通篇使用术语“包括”、“包含”及“具有”意谓至少包含所叙述特征，使得不排除任何较多数目个相同特征及/或额外类型的其它特征。本文中对“一个实施例”、“实施例”或类似表述的提及意谓结合实施例描述的特定特征、结构、操作或特性可包含于本发明技术的至少一个实施例中。因此，此些片语或表述在本文中的出现未必皆指同一实施例。此外，在一或多个实施例中，各种特定特征、结构、操作或特性可以任何合适方式组合。

Claims (18)

1.一种半导体装置，其包括：
封装衬底，其具有上表面及下表面，其中所述上表面是连续的以及所述下表面经配置以电性连接至外部设备或电路；
裸片的堆叠，其附接到所述衬底的所述上表面，其中所述堆叠包含-
第一裸片，其包含前侧及在所述前侧处的一或多个第一电感器；及
第二裸片，其安置于所述第一裸片上方且从所述第一裸片偏移，所述第二裸片包含面向所述第一裸片的前侧及在所述第二裸片的所述前侧处的一或多个第二电感器，其中所述第二电感器中的一或多个电感耦合到一或多个第一电感器；
第一多个焊线，其将所述衬底的所述上表面上的第一多个衬底焊垫电耦合到所述第一裸片的所述前侧上的第一多个裸片焊垫，其中在制造所述半导体装置之后，所述衬底的所述上表面在所述第一多个衬底焊垫与裸片的所述堆叠之间保持连续；及
第二多个焊线，其将所述衬底的所述下表面上的第二多个衬底焊垫电耦合到所述第二裸片的所述前侧上的第二多个裸片焊垫。
2.根据权利要求1所述的装置，其中所述第二多个裸片焊垫位于突出于所述第一裸片之上的所述第二裸片的周边部分中。
3.根据权利要求1所述的装置，其进一步包括在所述衬底与所述第一裸片之间的第一裸片附接膜及在所述第一裸片与所述第二裸片之间的第二裸片附接膜。
4.根据权利要求1所述的装置，其中所述第一电感器包含至少一个作用电感器及至少一个孤立电感器，其中所述作用电感器与对应第二电感器对准，且所述孤立电感器不与第二电感器对准。
5.根据权利要求1所述的装置，其中所述第一裸片及所述第二裸片为均质的。
6.根据权利要求1所述的装置，其中所述第一裸片及所述第二裸片经配置以经由所述第一电感器及所述第二电感器无线地通信。
7.根据权利要求1所述的装置，其中所述第一电感器及所述第二电感器中的一或多个各自包含收发器线圈及接收器线圈，其中所述接收器线圈与所述收发器线圈分离且大体上与所述收发器线圈共面。
8.根据权利要求1所述的装置，其中所述第一裸片包含硅，且其中所述第一电感器嵌入于所述第一裸片中，使得每一第一电感链路与所述第一裸片的作用表面分离所述硅的一部分。
9.根据权利要求1所述的装置，其进一步包括在所述衬底的所述下表面上且经配置以将所述衬底电耦合到所述外部设备或电路的多个电连接器。
10.根据权利要求1所述的装置，其中所述堆叠进一步包括：
第三裸片，其安置于所述第二裸片上方，所述第三裸片包含前侧及在所述第三裸片的所述前侧处的一或多个第三电感器；及
第四裸片，其安置于所述第三裸片上方且从所述第三裸片偏移，所述第四裸片包含面向所述第三裸片的前侧及在所述第四裸片的所述前侧处的一或多个第四电感器，其中所述第四电感器中的一或多个电感耦合到所述第三电感器中的所述一或多个。
11.根据权利要求10所述的装置，其进一步包括：
第三多个焊线，其将所述第四裸片电耦合到所述第二裸片；及
第四多个焊线，其将所述第二裸片的所述前侧上的所述第二多个裸片焊垫电耦合到所述第四裸片的所述前侧上的第三多个裸片焊垫。
12.根据权利要求10所述的装置，其中-
所述第二裸片在第一方向上从所述第一裸片偏移，
所述第四裸片在所述第一方向上从所述第三裸片偏移，且
所述第三裸片沿垂直于所述衬底的所述上表面的轴线与所述第二裸片对准。
13.一种半导体装置，其包括：
衬底，其具有上表面及下表面；
第一裸片，其安装到所述衬底且包含第一作用侧及在所述第一作用侧处的第一电感器；
第二裸片，其在偏移位置中安装到所述第一裸片，使得所述第二裸片的一部分延伸超出所述第一裸片，其中所述第二裸片包含面向所述第一裸片的第二作用侧及在所述第二裸片的所述第二作用侧处的第二电感器，且其中所述第一电感器中的一或多个电感耦合到一或多个对应第二电感器；
第一多个互连件，其将所述衬底电耦合到所述第一裸片；及
第二多个互连件，其将所述第二裸片的所述第二作用侧电耦合到衬底的所述下表面且从所述第二裸片的所述第二作用侧延伸到衬底的所述下表面；及
模制材料，其仅囊封所述第二多个互连件的一部分。
14.根据权利要求13所述的装置，其中所述第二多个互连件将所述衬底的所述下表面处的第一衬底焊垫电耦合到所述第二裸片的延伸超出所述第一裸片的所述部分处的第一裸片焊垫。
15.根据权利要求13所述的装置，其中所述第一裸片及所述第二裸片为均质的。
16.根据权利要求13所述的装置，其中所述第一裸片包含硅，且其中所述第一电感器嵌入于所述第一裸片中，使得所述第一电感器中的每一个与所述第一裸片的第一表面分离所述硅的一部分。
17.根据权利要求13所述的装置，其中所述衬底为第一衬底，且其中所述第一衬底、所述第一裸片、所述第二裸片、所述第一多个互连件及所述第二多个互连件一起包括第一堆叠封装，所述装置进一步包括与所述第一堆叠封装间隔开的第二堆叠封装且包含：
第二衬底，其具有上表面及下表面；
第三裸片，其安装到所述第二衬底的所述上表面且包含作用侧及在所述第三裸片的所述作用侧处的多个第三电感器；
第四裸片，其在偏移位置中安装到所述第三裸片，使得所述第四裸片的边缘延伸超出所述第三裸片的对应边缘，其中所述第四裸片包含作用侧及在所述第四裸片的所述作用侧处的多个第四电感器，且其中所述第三电感器中的一或多个电感耦合到一或多个对应第四电感器；
第三多个互连件，其将所述第二衬底电耦合到所述第三裸片；及
第四多个互连件，其将所述第四裸片的所述作用侧电耦合到第二衬底的所述下表面且从所述第四裸片的所述作用侧延伸到第二衬底的所述下表面。
18.根据权利要求17所述的装置，其进一步包括至少部分地囊封第一堆叠配置及第二堆叠配置的模制材料。
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