CN110491794A - 用于将导电元件键合到键合对象的方法 - Google Patents

用于将导电元件键合到键合对象的方法 Download PDF

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Publication number
CN110491794A
CN110491794A CN201910397497.8A CN201910397497A CN110491794A CN 110491794 A CN110491794 A CN 110491794A CN 201910397497 A CN201910397497 A CN 201910397497A CN 110491794 A CN110491794 A CN 110491794A
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CN
China
Prior art keywords
bonded portion
supersonic generator
bonding
pressing force
bonded
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CN201910397497.8A
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English (en)
Inventor
F·伊科克
G·施特罗特曼
A·塔卡克
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Infineon Technologies AG
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Infineon Technologies AG
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Publication of CN110491794A publication Critical patent/CN110491794A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/02—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections
    • H01R43/0207—Ultrasonic-, H.F.-, cold- or impact welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • B23K20/106—Features related to sonotrodes
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Abstract

一个方面涉及一种方法，该方法包括通过以下方式将导电元件(1)键合到键合对象(2)的键合表面(2t)：通过使电加热电流(IH)穿过键合部分(1s)，将导电元件(1)的键合部分(1s)的温度从初始温度(T0)增加到升高的温度(T1)；使用超声波发生器(3)用按压力(F)按压键合部分(1s)抵靠键合表面(2t)，并经由超声波发生器(3)将超声波振动引入到键合部分(1s)中，使得键合部分(1s)的升高的温度(T1)、键合部分(1s)中的超声波信号和按压力(F)同时存在，并且导致在键合部分(1s)和键合表面(2t)之间形成紧密且直接的键合。

Description

用于将导电元件键合到键合对象的方法
技术领域
本公开涉及键合技术。
背景技术
键合技术被广泛用于各种电子领域。例如，在许多传统应用中，铝线被用于电接触电子部件，例如半导体芯片、电路板等。通常，使用引线键合，将一根或多根铝线附接到电子部件的金属化部分。然而，铝线表现出有限的载流容量并且可能导致显著的欧姆功率损耗。考虑到现代电子部件的永久地增加的功率密度，键合线的高载流容量和低欧姆功率损耗是期望的。原则上，这可以通过增加键合线的直径和/或通过使用所具有的电阻率低于铝的键合线来解决。对于具有低电阻率的材料，有希望的候选者将是金、银和铜。由于其高昂的价格，至少对于大规模生产的产品而言，金和银是不可能的。因此，铜或铜基材料将是首选材料。
然而，增加键合线的直径和/或从铝移动到铜或铜基材料导致更加刚性的键合线，这又在引线键合工艺期间需要更高的按压力，并且因此包含在刚性线被键合到的电子部件中可能出现破裂的风险。
需要一种方法，该方法不排他地而且适用于将刚性导电元件键合到对压力敏感的键合对象上。
发明内容
一个方面涉及一种方法，其中导电元件通过以下方式被键合到键合对象的键合表面：通过使电加热电流穿过导电元件的键合部分，将键合部分的温度从初始温度增加到升高的温度；使用超声波发生器用按压力按压键合部分抵靠键合表面，并经由超声波发生器将超声波振动引入到键合部分中，使得键合部分的升高的温度、键合部分中的超声波信号和按压力同时存在，并且导致在键合部分和键合表面之间形成紧密且直接的键合。
参考以下附图和描述，本发明可以被更好地理解。附图中的部件不一定按比例绘制，而是将重点放在说明本发明的原理上。此外，在附图中，相同的附图标记在不同视图中表示对应的部分。
附图说明
图1图示了根据第一示例的用于将导电元件键合到键合对象的键合表面的设置的不同视图。
图2图示了根据第二示例的用于将导电元件键合到键合对象的键合表面的设置的不同视图。
图3图示了根据第三示例的用于将导电元件键合到键合对象的键合表面的设置的不同视图。
图4图示了根据第四示例的用于将导电元件键合到键合对象的键合表面的设置的不同视图。
图5图示了根据第五示例的用于将导电元件键合到键合对象的键合表面的设置的示例。
图6图示了根据第六示例的用于将导电元件键合到键合对象的键合表面的设置的示例。
图7图示了根据第七示例的用于将导电元件键合到键合对象的键合表面的设置的示例。
图8图示了用于将导电元件键合到键合对象的键合表面的示例方法的流程图。
具体实施方式
在以下详细描述中，参考附图。附图示出了本发明可以被实践的具体示例。此外，附图用于说明某些原理，因此仅示出了用于理解这些原理的方面。应当理解，除非另有特别说明，否则关于各种示例描述的特征和原理可以被彼此组合。与权利要求书一样，作为“第一元件”、“第二元件”、“第三元件”等的某些元件的指定不应被理解为列举。相反，这种指定仅用于提出不同的“元件”。也就是说，例如，“第三元件”的存在不需要存在“第一元件”和“第二元件”。
图1示出了用于将导电元件1直接键合到键合对象2的键合表面2t的第一示例性设置的不同视图(a)、(b)、(c)和(d)。为简单起见，不同的视图(a)、(b)、(c)和(d)也分别被指定为图1(a)、1(b)、1(c)和(1d)。类似地，对于包括不同视图的其他附图也是如此。在本说明书的意义上，“直接键合”及其变体旨在表示导电元件1在键合工艺结束时与键合对象2的键合表面2t物理接触。图1(a)图示了剖面图，说明如何使用增强的引线键合技术在导电元件1和键合对象2的键合表面2t之间创建直接连接。图1(a)的放大的部分被图示于图1(b)中。导电元件1和键合表面2t(其可选地可以是金属表面)之间的直接连接被形成在导电元件1的键合部分1s和键合对象2的键合部分2s之间。即，在键合工艺结束时，键合部分1s和键合部分2s彼此物理接触。
与传统的引线键合技术不同，本文所描述的增强键合技术可以采用电加热电流IH，该电加热电流IH穿过导电元件1的键合部分1s。由电源8提供的电加热电流IH用于将能量引入到键合部分1s中。结果，键合部分1s的温度从初始温度T0(例如室温)增加到升高的温度T1(例如，至少80摄氏度)。
至少在加热状态下(即，至少在升高的温度T1处)，使用超声波发生器3用按压力F按压键合部分1s抵靠键合表面2t。超声波发生器3被机械地耦合到超声波换能器5。当超声波发生器3按压键合部分1s抵靠键合表面2t时，超声波信号(即在超声波频率f处的超声波振动，例如在约20kHz至约120kHz的范围内)经由超声波发生器3从超声波换能器5被转移到键合部分1s中。由此，超声波能量从超声波发生器3被转移到键合部分1s。超声波换能器5的振荡方向(由粗双箭头和超声波频率的参考符号“f”表示)以及，相应地，超声波发生器3的振荡方向可以与键合表面2t在键合部分2s的区域具有的方向平行。发生经由超声波发生器3将超声波振动引入到键合部分1s中，使得键合部分1s的升高的温度T1、键合部分1s中的超声波信号和影响键合部分1s的按压力F同时存在并且导致在键合部分1s和键合表面2t之间形成紧密且直接的键合。升高的温度T1降低了键合部分1s的机械稳定性(例如拉伸屈服强度、极限拉伸强度)，并且，因此，与从超声波振动转移的能量和按压力F一起，促进键合部分1s和键合表面2t之间的键合连接的形成。
与在电子电路中形成引线键合连接中使用的传统引线键合技术相比，除了超声波振动的转移和按压力F之外，本文所述的实施例还可以使用如上面所描述的电加热电流IH。由电加热电流IH引起的升高的温度T1可以允许将硬(例如铜基)导电元件1和/或与传统导电元件相比也具有增大的直径(和/或增大的截面)的导电元件1键合到压力敏感的键合对象2。
根据一个示例，按压力F可以大于最小按压力Fmin和/或小于最大按压力Fmax。例如，最小按压力Fmin可以是1N(牛顿)。备选地或另外地，最大按压力Fmax可以是2500N(牛顿)。然而，原则上，小于1N的最小按压力Fmin和/或大于2500N的最大按压力Fmax也是可能的。如果按压力F太低，则存在(已经键合的)导电元件1随后从键合表面2t抬起的风险，这当然是不希望的。
根据另一示例，与传统的键合技术相比，其中与导电元件1相同的导电元件被键合到与键合对象2相同的键合对象的键合表面，考虑到由加热电流IH引起的升高的温度T1，采用的按压力F可以(但不一定需要)被减小。
因为由键合部分1s中的加热电流IH引起的热耗散随着加热电流IH基本上呈二次方增加，所以升高的温度T1随着加热电流IH而正向增加。因此，增加加热电流IH可有助于促进导电元件1与键合对象2之间的键合连接的形成，使得更刚性的导电元件1(例如具有大的截面，基于铜的)可以成功地被键合到键合表面2t。例如，加热电流IH可以被调节，使得升高的温度T1至少为80℃，例如，在80℃和1200℃之间。
超声波键合工艺可以(例如，通过适当地调节加热电流IH)被执行，使得在整个键合工艺期间，升高的温度T1保持在键合部分1s的熔点以下。备选地，超声波键合工艺(例如，通过适当地调节加热电流IH)可以被执行，使得升高的温度T1大于或等于键合部分1s的熔点(这样的超声波键合工艺也可以被称为超声波焊接工艺)。
用于加热键合部分1s的电加热电流IH由电源8提供。从图1(a)和1(b)可以看出，使用超声波发生器3作为第一电源电极以及使用附加接触电极30作为第二电源电极，电加热电流IH可以被提供给键合部分1s。为了将电加热电流IH提供给键合部分1s，超声波发生器3可以在第一接触位置P1处与键合部分1s电接触，并且接触电极30可以在与第一接触位置P1(参见图1(b))不同的第二接触位置P2处与键合部分1s电接触，使得电加热电流IH可以经由第一和第二接触位置P1、P2被提供到键合部分s1中。与超声波发生器3不同，接触电极30仅用于将电加热电流IH提供给键合部分1s，而不是像超声波发生器3那样向键合部分1s上施加大的按压力。例如，可以用接触力F30将接触电极30按压抵靠键合部分1s，接触力F30例如小于由超声波发生器3施加的按压力的20％。低接触力F30可以例如通过弹簧状接触电极30来实现。
如图1(a)中示例性地图示的，除了超声波发生器3之外，接触电极30可以机械地被附接到超声波换能器5。当然，需要电介质隔离件51以防止超声波换能器5与接触电极30和超声波发生器3短路。这可以从图1(d)的俯视图和图1(a)中最好地看出。在图1(d)的示例中，电介质隔离件51将超声波发生器3与超声波换能器5电隔离。备选地或另外地，该(或另外的)电介质隔离件51可被用于将接触电极30与超声波换能器5电隔离。图1(d)还示出了可以使用夹紧螺钉50将超声波发生器3安装到超声波换能器5。电介质隔离件51还使夹紧螺钉50与超声波换能器5电绝缘。接触电极30可以与超声波发生器3以相同或相似的方式被安装到超声波换能器5。
图1(c)是从超声波换能器5的前侧以超声波换能器5的尖端为视角示出图1(a)的布置的示意图示。然而，为了说明键合部分1s的截面面积，导电元件1以截面被图示。
图2图示了图1的布置的修改。原则上，图2(a)、2(b)和2(c)分别对应于图1(a)、1(b)和1(c)。除了随后解释的差异之外，图1的示例的以上描述以相同或类似的方式应用于图2的示例。
在图1的示例中，接触电极30被机械地附接到超声波换能器5，而在图2的示例中，接触电极30被机械地附接到超声波发生器3(但是与超声波发生器3电绝缘)。
例如，超声波发生器3可以被引入接触电极30的环形部分30r(开环或闭环)中，并且接触电极30可以被夹紧(例如，使用夹紧螺钉60)到超声波发生器3。这可以从图1(a)和1(d)中最好地看出，图1(d)是水平截面图，其中截面贯穿图1(a)图示的环形部分30r并与键合面2t平行。
当然，需要电介质隔离件61以防止接触电极30和超声波发生器3之间的短路。这可以从图2(d)中最好地看出。在图2(d)的示例中，电介质隔离件61将接触电极30与超声波发生器3电隔离。图2(a)和2(d)还示出可以使用夹紧螺钉60将超声波发生器3安装到超声波发生器3。电介质隔离件61还使夹紧螺钉60与超声波发生器3电绝缘。
图3图示了图1和图2的布置的修改。原则上，图3(a)、3(b)和3(c)分别对应于图1(a)、1(b)和1(c)和2(a)、2(b)和2(c)。除了随后解释的差异之外，图1和图2的示例的以上描述以相同或类似的方式应用于图3的示例。
在图3的示例中，超声波发生器3包括第一局部超声波发生器31和第二局部超声波发生器32。在键合工艺期间，使用由第一局部超声波发生器31施加的第一按压力F1和由第二局部超声波发生器32施加的第二按压力F2，将键合部分1s按压抵靠键合表面2t。
从图3(a)和3(b)可以看出，使用第一局部超声波发生器31作为第一电源电极以及使用第二局部超声波发生器32作为第二电源电极，电加热电流IH可以被提供给键合部分1s。为了将电加热电流IH提供给键合部分1s，第一局部超声波发生器31可以在第一接触位置P1处与键合部分1s电接触，并且第二局部电极32可以在不同于第一接触位置P1(参见图3(b))的第二接触位置P2处电接触键合部分1s，以便可以经由第一和第二接触位置P1、P2将电加热电流IH提供到键合部分1s中。
第一局部超声波发生器31和第二超声波发生器32都不仅用于将电加热电流IH提供给键合部分1s，而且在键合工艺期间还分别向键合部分1s施加大的第一和第二按压力F1和F2。
例如，由第一局部超声波发生器31实施的第一按压力F1和由第二局部超声波发生器32同时实施的第二按压力F2可以是基本相同的。然而，第一和第二按压力F1、F2之间可以存在一定的差异。例如，在键合工艺期间的某个时间点或键合工艺的每个时间点，第二按压力F2可以是第一按压力F1的至少50％。
如图3(a)所示，第一局部超声波发生器31和第二局部超声波发生器32都可以被机械地附接到超声波换能器5。当然，需要一个或多个电介质隔离件71、72以防止超声波换能器5与第一局部超声波发生器31和第二局部超声波发生器32短路。这可以从图3(d)的截面图以及图3(a)中最好地看出。在图3(d)的示例中，第一电介质隔离件71将第一局部超声波发生器31与超声波换能器5电隔离，并且第二电介质隔离件72将第二局部超声波发生器32与超声波换能器5电隔离，并且第一电介质隔离件71和第二电介质隔离件72中的至少一个将第一局部超声波发生器31与第二局部超声波发生器32电隔离。
图3(a)和3(d)还示出了可以使用夹紧螺钉70将第一局部超声波发生器31和第二局部电极32安装到超声波换能器5，夹紧螺钉70将第一局部超声波发生器31和第二局部电极32两者夹紧到超声波换能器5。
图4中图示了可以与使用第一局部超声波发生器31和第二局部电极32结合使用的另一选择。如图所示，第一局部超声波发生器31和第二局部电极32可以几乎在其整个长度上经由电介质隔离件73被附接到彼此，电介质隔离件73在第一局部超声波发生器31和第二局部电极32之间延伸并且与它们机械接触。如图所示，电介质隔离件73可以在第一局部超声波发生器31和第二局部电极32之间连续地从超声波换能器5或从靠近超声波换能器5的地方延伸，几乎一直到第一局部超声波发生器31和第二局部电极32的底端，局部超声波发生器31、32在该底端处(在相应的接触位置P1和P2处)与键合部分1s接触。因此，第一和第二局部超声波发生器31、32之间的紧密耦合可以被实现，使得第一和第二局部超声波发生器31、32的底端之间的距离是明确限定的。也就是说，对于特定类型的导电元件1，接触位置P1和P2之间的距离(其影响键合部分1s的电阻，并且因此影响由穿过键合部分1s的加热电流IH引起的所耗散的热)被很好地限定，以便适合于实现期望的升高的温度T1的加热电流IH可以被容易地调节和/或预先选择。
原则上，可以使用本文所述的方法将任何导电元件1键合到键合对象2的键合表面2t。例如，导电元件1可以是键合线，其具有(被键合的键合部分1s的外部，例如在键合那个键合部分之前的键合部分1s中)基本上圆形或基本上矩形且恒定的截面。具有(被键合的键合部分1s的外部)平坦的、基本上矩形和恒定的截面的键合线通常被称为“带”。然而，在本说明书和权利要求的意义上，“带”被认为是特殊类型的键合线。
根据图5中所图示的示例，导电元件1可以是(平坦的或如图所示弯曲的)金属片。通常，导电元件1可以被用作例如电子设备的不同电子部分之间的(内部)电互连件，或者被用作用于电连接电子设备的(外部)电端子。
在图1至图5的示例中，键合对象2和键合表面2t仅被示意性地图示。通常，键合对象2可以是具有表面2t(例如，金属表面)的任何元件，导电元件1可以被键合到该表面2t上。图6和图7图示了如下示例，其中相应的键合对象2包括在键合表面2t下面的其键合部分2s处的脆性层(图6中的半导体本体10和图7中的陶瓷层90)，其在传统的键合工艺期间可能容易破裂(即在不使用加热电流的键合工艺期间)。然而，利用升高的温度T1(特别地是由加热电流IH引起)的上面描述的键合工艺允许将(不仅而且)刚性导电元件1(例如，具有键合部分1s的导电元件1，该键合部分具有大的截面面积A和/或包括铜)键合到键合表面2t，而在下面的脆性层10、90中没有意外破裂的发生。
在图6的示例中，键合对象2是半导体芯片15，其包括半导体本体10(例如，包括如硅、碳化硅等的任意半导体材料)，第一芯片金属化层11和第二芯片金属化层11。如图所示，第一和第二芯片金属化层11、12可以被设置在半导体本体10的相对侧。可选地，半导体芯片1可以在键合工艺之前被预先安装在电路载体9上(例如，使用连接层，例如焊料层，粘合剂层或烧结金属粉末层，被设置在半导体芯片1和电路载体4之间并与两者邻接)。在先前示例中描述的键合表面2t可以是第一芯片金属化层11的表面，例如，第一芯片金属化层11的背向半导体本体10的表面。
半导体芯片15(例如，二极管、晶体管或任何其他半导体部件)可以在第一和第二芯片金属化层11、12之间表现出一定的电压阻挡能力。对于半导体本体10的特定材料，电压阻挡能力取决于半导体本体10的厚度d10(垂直于键合表面2t被测量)。也就是说，对于低电压阻挡能力，半导体本体10的小厚度d10是足够的，但是使半导体本体10对高按压力敏感。利用加热电流IH的所描述的方法允许降低破裂的风险，特别是当将“刚性”导电元件键合到具有小厚度d10的半导体芯片15时。
“刚性”导电元件1被键合到第一芯片金属化层11的一些传统键合方法采用具有大厚度d11的第一芯片金属化层11，以保护在下面的脆性半导体本体10免遭在键合工艺期间可能发生的破裂。然而，一方面，增加的厚度d11也增加了所涉及的成本。另一方面，第一芯片金属化层11的增加的厚度d11仅适用于具有厚半导体本体10的半导体芯片15，因为当半导体本体10仍然是具有大直径的(尚未被切割)半导体晶片的一部分时，第一芯片金属化层11被形成在半导体本体10上。然而，当温度变化时，这样的具有设置在其上的厚金属化层(其中一部分将在晶片被切割之后形成第一芯片金属化层11)的薄半导体晶片将显示出显著的弯曲(“晶片翘曲”)。因此，由于晶片翘曲，在传统晶片制造厂中，具有设置在其上的厚金属化层的薄半导体晶片不能被适当地处理。
因此，将“刚性”导电元件1键合到第一芯片金属化层11的传统键合方法采用仅用于具有相对厚的半导体本体10的半导体芯片15的、具有大厚度d11的第一芯片金属化层11。然而，通过电加热键合部分1s产生的键合部分1s的升高的温度T1的键合方法的当前描述的方面还允许将“刚性”导电元件1键合到形成在薄半导体本体10上的薄的第一芯片金属化层11。
根据图7图示的另一示例，键合对象2可以是电路载体9(也被称为“基板”)，其包括脆性陶瓷层90、第一基板金属化层91和可选的第二基板金属化层92。如图所示，第一和第二基板金属化层91、92可以被设置在陶瓷层90的相对侧。第一基板金属化层91的层厚度可以例如在2μm(微米)至30μm的范围内。
第一和第二(如果被提供)基板金属化层91、92中的每一个可以但不限于由以下材料中的一种组成或包括以下材料中的一种：铜；铜合金；铝；铝合金；在半导体组件的操作期间保持固态的任何其他金属或合金。根据一个实例，陶瓷可以但不限于由以下材料中的一种组成或包括以下材料中的一种：氧化铝；氮化铝；氧化锆；氮化硅；氮化硼；任何其他电介质陶瓷。例如，电路板2可以是例如直接铜键合(DCB)基板，直接铝键合(DAB)基板或活性金属钎焊(AMB)基板。然而，电路载体9还可以是具有非陶瓷电介质绝缘层90的传统印刷电路板(PCB)。例如，非陶瓷电介质绝缘层可以由固化树脂组成或包括固化树脂。
图8图示了用于将导电元件键合到键合对象的键合表面的示例方法100的流程图。在步骤102中，通过使电加热电流IH穿过键合部分1s，将导电元件1的键合部分1s的温度从初始温度T0增加到升高的温度T1。根据步骤104，使用超声波发生器3(31、32)用大于最小按压力Fmin的按压力F按压键合部分1s抵靠键合表面2t。根据步骤106，经由超声波发生器3(31、32)将超声波振动引入到键合部分1s中，使得键合部分1s的升高的温度T1、键合部分1s中的超声波信号和按压力F同时存在，并且导致在键合部分1s和键合表面2t之间形成紧密和直接的键合。
在将电加热电流IH供应到键合部分1s之前，超声波发生器3(或31、32)可以可选地被按压抵靠键合部分1s并被激活(即以超声频率振动)，以局部地去除键合部分1s的电介质表面层(例如氧化物层)，以便允许超声波发生器3(或31、32)与键合部分1s之间更好的电接触。也就是说，可以在电加热电流IH之前和/或在电加热电流IH期间，将压力F施加到键合部分1s。然而，在其他实施例中，可以在按压力F之前和/或在按压力F期间将电加热电流IH施加到键合部分1s。
导电元件1的尺寸在导电元件1的键合部分1s处可以是截面面积A，其是具有在125μm(微米)的范围内的直径的圆，或者基本上为矩形的面积，具有在400μm至6000μm范围内的长度，以及在30μm至2000μm范围内的高度。例如，截面面积A可以是至少0.3mm2(这大约是具有直径为125μm的导电元件线的截面)。然而，原则上，任何其他截面面积A和/或几何形状也可以被使用。
根据另一种选择，键合工艺可以在惰性或还原性气氛(例如Ar、SF6、H2)中进行，以防止由升高的温度T1引起的导电元件1和键合表面2t的表面氧化。

Claims (14)

1.一种用于将导电元件键合到键合对象的键合表面的方法，所述方法包括：
通过使电加热电流穿过所述导电元件的键合部分，将所述键合部分的温度从初始温度增加到升高的温度；
使用超声波发生器用按压力按压所述键合部分抵靠所述键合表面，并经由所述超声波发生器将超声波振动引入到所述键合部分中，使得所述键合部分的所述升高的温度，所述键合部分中的所述超声波信号和所述按压力同时存在并导致在所述键合部分和所述键合表面之间形成紧密且直接的键合。
2.根据权利要求1所述的方法，其中所述升高的温度是以下之一：
大于80℃且小于所述键合部分的熔点；或者
大于80℃且大于或等于所述键合部分的熔点。
3.根据权利要求1或2所述的方法，其中所述电加热电流经由所述超声波发生器被提供给所述键合部分。
4.根据前述权利要求中任一项所述的方法，其中：
所述超声波发生器包括第一局部超声波发生器和第二局部超声波发生器；
用所述按压力按压所述键合部分抵靠所述键合表面包括：使用所述第一局部超声波发生器用第一按压力按压所述键合部分抵靠所述键合表面，以及使用所述第二局部超声波发生器用第二按压力按压所述键合部分抵靠所述键合表面，所述第二按压力是所述第一按压力的至少50％；以及
所述电加热电流经由所述第一局部超声波发生器和所述第二局部超声波发生器二者被提供给所述键合部分。
5.根据权利要求4所述的方法，其中使所述电加热电流穿过所述键合部分包括：
通过所述第一局部超声波发生器在第一接触位置电接触所述键合部分；以及
通过所述第二局部超声波发生器在第二接触位置电接触所述键合部分。
6.根据权利要求1至3中的一项所述的方法，包括：
用小于所述按压力的20％的接触力按压接触电极抵靠所述键合部分；
其中所述电加热电流经由所述超声波发生器和所述接触电极二者被提供给所述键合部分。
7.根据权利要求6所述的方法，其中使所述电加热电流穿过所述键合部分包括：
通过所述超声波发生器在第一接触位置电接触所述键合部分；以及
通过所述接触电极在第二接触位置电接触所述键合部分。
8.根据前述权利要求中任一项所述的方法，其中：
所述键合对象是半导体芯片；以及
所述键合表面是所述半导体芯片的金属化层的表面。
9.根据权利要求8所述的方法，其中所述半导体芯片的所述金属化层是铜层，所述铜层包括小于或等于20μm的层厚度。
10.根据权利要求1至7中任一项所述的方法，其中：
所述键合对象是包括陶瓷层的电路载体；以及
所述键合表面是所述电路载体的金属化层的表面。
11.根据前述权利要求中任一项所述的方法，其中所述导电元件是以下之一：
键合线；
键合带；
金属片。
12.根据前述权利要求中任一项所述的方法，其中，所述导电元件在所述键合部分中包括至少0.3mm2的截面面积。
13.根据前述权利要求中任一项所述的方法，其中，所述按压力大于1N的最小按压力。
14.根据前述权利要求中任一项所述的方法，其中，所述按压力小于2500N的最大按压力。
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