CN110416061B - 形成低k层的方法和形成半导体装置的方法 - Google Patents
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- CN110416061B CN110416061B CN201910292773.4A CN201910292773A CN110416061B CN 110416061 B CN110416061 B CN 110416061B CN 201910292773 A CN201910292773 A CN 201910292773A CN 110416061 B CN110416061 B CN 110416061B
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- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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Applications Claiming Priority (2)
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| KR1020180048568A KR102541454B1 (ko) | 2018-04-26 | 2018-04-26 | 저유전막의 형성 방법, 및 반도체 소자의 형성방법 |
| KR10-2018-0048568 | 2018-04-26 |
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| CN110416061A CN110416061A (zh) | 2019-11-05 |
| CN110416061B true CN110416061B (zh) | 2024-04-30 |
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| EP (1) | EP3561860A1 (enExample) |
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| CN (1) | CN110416061B (enExample) |
| SG (1) | SG10201903205RA (enExample) |
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| CN118007094A (zh) * | 2015-06-16 | 2024-05-10 | 弗萨姆材料美国有限责任公司 | 卤硅烷化合物和组合物以及用于使用其沉积含硅膜的方法 |
| KR102830540B1 (ko) * | 2021-07-29 | 2025-07-07 | 삼성전자주식회사 | 반도체 장치 |
| JP7437362B2 (ja) * | 2021-09-28 | 2024-02-22 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、基板処理方法及びプログラム |
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| CN103187268A (zh) * | 2011-12-27 | 2013-07-03 | 东京毅力科创株式会社 | 碳氮氧化硅膜的形成方法 |
| CN105493248A (zh) * | 2013-09-30 | 2016-04-13 | 株式会社日立国际电气 | 半导体器件的制造方法、衬底处理装置、衬底处理系统及记录介质 |
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| JP2007043147A (ja) | 2005-07-29 | 2007-02-15 | Samsung Electronics Co Ltd | 原子層蒸着工程を用いたシリコンリッチナノクリスタル構造物の形成方法及びこれを用いた不揮発性半導体装置の製造方法 |
| US7795089B2 (en) * | 2007-02-28 | 2010-09-14 | Freescale Semiconductor, Inc. | Forming a semiconductor device having epitaxially grown source and drain regions |
| JP5151260B2 (ja) * | 2007-06-11 | 2013-02-27 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US8647722B2 (en) | 2008-11-14 | 2014-02-11 | Asm Japan K.K. | Method of forming insulation film using plasma treatment cycles |
| KR101074291B1 (ko) | 2009-09-11 | 2011-10-18 | 한국철강 주식회사 | 광기전력 장치 및 광기전력의 제조 방법 |
| KR101378478B1 (ko) * | 2011-03-23 | 2014-03-27 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치 |
| US9165761B2 (en) | 2011-08-25 | 2015-10-20 | Hitachi Kokusai Electric Inc. | Method for manufacturing semiconductor device, method for processing substrate, substrate processing apparatus and recording medium |
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| JP6022274B2 (ja) | 2012-09-18 | 2016-11-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP6024484B2 (ja) | 2013-01-29 | 2016-11-16 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| JP6199570B2 (ja) * | 2013-02-07 | 2017-09-20 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| JP6035166B2 (ja) | 2013-02-26 | 2016-11-30 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
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| JP5864637B2 (ja) * | 2013-03-19 | 2016-02-17 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
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2018
- 2018-04-26 KR KR1020180048568A patent/KR102541454B1/ko active Active
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2019
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- 2019-04-17 JP JP2019078428A patent/JP7256675B2/ja active Active
- 2019-04-25 EP EP19171041.7A patent/EP3561860A1/en not_active Withdrawn
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| US6486082B1 (en) * | 2001-06-18 | 2002-11-26 | Applied Materials, Inc. | CVD plasma assisted lower dielectric constant sicoh film |
| CN103187268A (zh) * | 2011-12-27 | 2013-07-03 | 东京毅力科创株式会社 | 碳氮氧化硅膜的形成方法 |
| CN105493248A (zh) * | 2013-09-30 | 2016-04-13 | 株式会社日立国际电气 | 半导体器件的制造方法、衬底处理装置、衬底处理系统及记录介质 |
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| US10861695B2 (en) | 2020-12-08 |
| EP3561860A1 (en) | 2019-10-30 |
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| CN110416061A (zh) | 2019-11-05 |
| JP7256675B2 (ja) | 2023-04-12 |
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| US20190333754A1 (en) | 2019-10-31 |
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