CN110324011A - A kind of high-power enhancement mode field effect transistor power amplifier - Google Patents
A kind of high-power enhancement mode field effect transistor power amplifier Download PDFInfo
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- CN110324011A CN110324011A CN201910726726.6A CN201910726726A CN110324011A CN 110324011 A CN110324011 A CN 110324011A CN 201910726726 A CN201910726726 A CN 201910726726A CN 110324011 A CN110324011 A CN 110324011A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
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Abstract
The invention discloses a kind of high-power enhancement mode field effect transistor power amplifiers, network is synthesized including four tunnel transformation coupled powers of input, first field-effect tube Darlington three stacks power amplification network, second field-effect tube Darlington three stacks power amplification network, third field-effect tube Darlington three stacks power amplification network, 4th field-effect tube Darlington three stacks power amplification network and four tunnel transformation coupled powers of output synthesize network, core architecture of the present invention stacks power amplification network in the high power of microwave section using effect pipe Darlington three, high gain characteristics, utilize difference amplifier in the good parasitic parameter inhibition of microwave frequency band simultaneously, it is combined with the good power combing characteristic of distribution transformer network, so that entire power amplifier obtains good high-gain, high efficiency and high-power output ability.
Description
Technical field
The present invention relates to field effect transistor radio-frequency power amplifier and integrated circuit fields, especially for frequency microwave
A kind of high-power enhancement mode field effect transistor power amplifier of the transmitting module application of transceiver end.
Background technique
With the fast development of wireless communication system and radio frequency microwave circuit, radio frequency front-end transceiver is also to high-performance, height
Integrated, low-power consumption direction is developed.Therefore the radio frequency of the urgent demand transmitter in market has high defeated with microwave power amplifier
The performances such as power, high-gain, high efficiency, low cost out, and integrated circuit is exactly the key technology for being expected to meet the market demand.
However, when realizing radio frequency and microwave power amplifier chip circuit using integrated circuit technology design, performance
Certain restriction is received with cost, major embodiment:
(1) high power, high efficiency ability are limited: conventional power amplifier uses multiway combination in parallel structure, or divides
The combined coefficient of cloth structure, both structures is limited, causes a part of power loss in synthesis network, limits Gao Gong
Rate, high efficiency ability.
(2) low-power consumption, plus and blowup ability are limited: the power amplifier of the single-ended common source transistors of tradition is by transistor
The influence of parasitic parameter, in high-frequency work, gain is lower, while power capability is significantly limited, realize the difficulty of low-power consumption compared with
Greatly.
The circuit structure of common high-gain, high power amplifier has very much, and most typically multistage, multichannel synthesizes single-ended
Power amplifier, still, conventional multi-level, multichannel synthesize single-ended power amplifier to meet simultaneously parameters requirement it is very tired
Difficulty is primarily due to:
Output impedance when 1. conventional multi-level, multichannel synthesize single-ended power amplifier using multiway combination in parallel structure compared with
It is low, therefore the impedance matching that synthesis network needs to realize high impedance conversion ratio is exported, the increasing for sacrificing amplifier is generally required in this way
Benefit reduces power, therefore limits high power, high efficiency ability.
2. amplifier unit often uses single-stage common source to amplify in amplifier of the tradition based on active transformer synthesis network
Device or Cascode amplifier, but the gain of both amplifiers is relatively limited, output power is limited by single tube also to be compared
It is lower.
It can thus be seen that high-gain, high power amplifier design difficulty based on integrated circuit technology are as follows: high power,
It is larger that high efficiency exports difficulty；The multichannel composite structure of traditional single transistor structure or Cascode transistor is based on active
There are many limitations in the amplifier of transformer synthesis network.In addition to this, often using the field effect transistor of depletion type
Additional power supply negative pressure is needed, this will also increase the complexity of circuit.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of high-power enhancement mode field effect transistor power amplifier,
The advantages of combining dual stage feedback amplifying technique, difference amplifier technology, distribution transformer synthetic technology has in Microwave Frequency
Section high power, high-gain and it is at low cost the advantages that.Enhancement mode field effect transistor is used simultaneously, and it is multiple to avoid depletion mode transistor
Miscellaneous power supply circuit.
The technical scheme to solve the above technical problems is that a kind of high-power enhancement mode field effect transistor power
Amplifier, including four tunnel transformation coupled powers of input synthesize network, the first field-effect tube Darlington three stacks power amplification network,
Second field-effect tube Darlington three stacks power amplification network, third field-effect tube Darlington three stacks power amplification network, the
Four field-effect tube Darlingtons three stack power amplification network and four tunnel transformation coupled powers of output synthesize network；
The input terminal for inputting four tunnel transformation coupled powers synthesis network is the input terminal of the entire power amplifier, the
The input terminal that one output end and the first field-effect tube Darlington three stack power amplification network connect, second output terminal and
The second field-effect tube Darlington three stacks the input terminal connection of power amplification network, third output end and the third field
Effect pipe Darlington three stacks the input terminal connection of power amplification network, and the 4th output end and the 4th field-effect tube reach woods
The input terminals that three stack power amplification networks that pause connect；
The output end that first field-effect tube Darlington three stacks power amplification network couples function with four tunnel transformations of the output
Rate synthesizes the first input end connection of network；The second field-effect tube Darlington three stack the output end of power amplification network with
The second input terminal connection of the output four tunnel transformation coupled powers synthesis network；The third field-effect tube Darlington three stacks
The output end of power amplification network is connected with the third input terminal that four tunnel transformation coupled powers of the output synthesize network；Described
The output end that four field-effect tube Darlingtons three stack power amplification network synthesizes network with four tunnel transformation coupled powers of the output
The 4th input terminal connection；
The output end for exporting four tunnel transformation coupled powers synthesis network is the output end of the entire power amplifier.
Further, the input terminal of four tunnel transformation coupled powers of input synthesis network connects inductance L1, inductance L1The other end
Connect inductance L2With ground capacity C1, inductance L2The other end connect coupling transformer T1The Same Name of Ends of primary coil, transformer T1
Primary coil non-same polarity ground connection；Transformer T1The first secondary coil Same Name of Ends connection input four tunnel transformations couple function
Rate synthesizes the first output end of network, transformer T1The first secondary coil non-same polarity input four tunnel transformation coupled powers close
At the second output terminal of network, transformer T1Second subprime coil Same Name of Ends connection input four tunnel transformation coupled powers synthesis
The third output end of network, transformer T1Second subprime coil non-same polarity connection input four tunnel transformation coupled powers synthesis
4th output end of network；Connect transformer T1The first, second secondary coil centre tap ground connection.
The beneficial effect of above-mentioned further scheme is: four tunnel transformation coupled power of the input synthesis network that the present invention uses removes
It is able to achieve outside the power distribution of input radio frequency signal, moreover it is possible to impedance matching and phase adjusted be carried out to radio-frequency input signals, together
Shi Shixian single-ended signal guarantees the phase difference of differential signal to the conversion of differential signal.
Further, the input terminal that N field-effect tube Darlington three stacks power amplification network connects capacitor Cdj, capacitor
CdjThe other end connect field effect transistor MdjGrid, resistance RgjWith ground resistance Rdj, resistance RgjThe other end connect field
Effect transistor MdjDrain electrode；Field effect transistor MdjSource electrode connect ground resistance RojWith capacitor Coj, capacitor Co1It is another
End connection capacitor Rsj, ground resistance RqjAnd field effect transistor MrjGrid, field effect transistor MrjSource electrode ground connection；Resistance
RsjThe other end connect ground capacity Coj, resistance RtjAnd field effect transistor MsjGrid, field effect transistor MsjSource electrode
Connect field effect transistor MrjDrain electrode；Resistance RtjThe other end connect ground capacity Ctj, resistance RpjAnd field effect transistor
MtjGrid, field effect transistor MtjSource electrode connect field effect transistor MsjDrain electrode；Resistance RpjThe other end connects field-effect
Transistor MtjDrain electrode, inductance LejThe output end of power amplification network, inductance L are stacked with N field-effect tube Darlington threeej's
The other end is also connected with field effect transistor MdjDrain electrode, wherein N mono-, two, three and four, j=1,2,3 and 4.
The beneficial effect of above-mentioned further scheme is: N field-effect tube Darlington three of the invention stacks power amplification network
The core circuit of middle use is the three stacking Darlington transistors based on enhancement mode field effect transistor, can be obviously improved amplifier
Gain and power capacity, while circuit structure is simpler compared to multichannel composite structure.
Further, four tunnel transformation coupled powers of output synthesis network includes transformer T2, transformer T2The first secondary wire
The non-same polarity and transformer T of circle2Second subprime coil Same Name of Ends pass through capacitor Cout1Connection, transformer T2First time
The Same Name of Ends and transformer T of grade coil2Second subprime coil non-same polarity pass through capacitor Cout2Connection, transformer T2?
The centre tap point of one secondary coil connects inductance Ld1, inductance Ld1The other end connect ground capacity Cd1With bias voltage Vd；Become
Depressor T2Second subprime coil centre tap point connect inductance Ld2, inductance Ld2The other end connect ground capacity Cd2With it is inclined
Set voltage Vd；Transformer T2Primary coil non-same polarity ground connection, transformer T2Primary coil Same Name of Ends connection output four
Road transformation coupled power synthesizes the output end of network, transformer T2The first secondary coil Same Name of Ends and non-same polarity connect respectively
Meet the first input end and the second input terminal of output four tunnel transformation coupled powers synthesis network, transformer T2Second subprime coil
Non-same polarity and Same Name of Ends be separately connected output four tunnel transformation coupled powers synthesis network third input terminal and the 4th input
End.
The beneficial effect of above-mentioned further scheme is: the four road power combing matching network of output that the present invention uses is in addition to energy
Outside the power combing for realizing four road difference radio-frequency signals, moreover it is possible to which four road differential signals are converted to single-ended signal, the Insertion Loss of introducing
It is smaller, while having ensured the output power and efficiency of the amplifier.
Detailed description of the invention
Fig. 1 is power amplifier functional block diagram of the present invention；
Fig. 2 is power amplifier circuit figure of the present invention.
Specific embodiment
Carry out detailed description of the present invention illustrative embodiments with reference to the drawings.It should be appreciated that shown in attached drawing and
The embodiment of description is only exemplary, it is intended that is illustrated the principle and spirit of the invention, and is not limited model of the invention
It encloses.
The embodiment of the invention provides a kind of high-power enhancement mode field effect transistor power amplifiers, including input four tunnels
Transformation coupled power synthesizes network, the first field-effect tube Darlington three stacks power amplification network, the second field-effect tube Darlington
Three stack power amplification network, third field-effect tube Darlington three stacks power amplification network, the 4th field-effect tube Darlington three
It stacks power amplification network and four tunnel transformation coupled powers of output synthesizes network.
As shown in Figure 1, the input terminal of input four tunnel transformation coupled powers synthesis network is the entire power amplifier
Input terminal, the first output end are connect with the input terminal that the first field-effect tube Darlington three stacks power amplification network,
Second output terminal is connect with the input terminal that the second field-effect tube Darlington three stacks power amplification network, third output end
The input terminal for stacking power amplification network with the third field-effect tube Darlington three is connect, the 4th output end and the described 4th
Field-effect tube Darlington three stacks the input terminal connection of power amplification network；
The output end that first field-effect tube Darlington three stacks power amplification network couples function with four tunnel transformations of the output
Rate synthesizes the first input end connection of network；The second field-effect tube Darlington three stack the output end of power amplification network with
The second input terminal connection of the output four tunnel transformation coupled powers synthesis network；The third field-effect tube Darlington three stacks
The output end of power amplification network is connected with the third input terminal that four tunnel transformation coupled powers of the output synthesize network；Described
The output end that four field-effect tube Darlingtons three stack power amplification network synthesizes network with four tunnel transformation coupled powers of the output
The 4th input terminal connection；
The output end for exporting four tunnel transformation coupled powers synthesis network is the output end of the entire power amplifier.
As shown in Fig. 2, the input terminal of input four tunnel transformation coupled powers synthesis network connects inductance L1, inductance L1It is another
End connection inductance L2With ground capacity C1, inductance L2The other end connect coupling transformer T1The Same Name of Ends of primary coil, transformer
T1Primary coil non-same polarity ground connection；Transformer T1The first secondary coil Same Name of Ends connection input four tunnel transformations coupling
First output end of power synthesis network, transformer T1The first secondary coil non-same polarity input four tunnel transformation coupled powers
Synthesize the second output terminal of network, transformer T1Second subprime coil Same Name of Ends connection input four tunnel transformation coupled powers close
At the third output end of network, transformer T1Second subprime coil non-same polarity connection input four tunnel transformation coupled powers close
At the 4th output end of network.Connect transformer T1The first, second secondary coil centre tap ground connection.
The input terminal that N field-effect tube Darlington three stacks power amplification network connects capacitor Cdj, capacitor CdjThe other end
Connect field effect transistor MdjGrid, resistance RgjWith ground resistance Rdj, resistance RgjThe other end connect field effect transistor
MdjDrain electrode；Field effect transistor MdjSource electrode connect ground resistance RojWith capacitor Coj, capacitor Co1The other end connect capacitor
Rsj, ground resistance RqjAnd field effect transistor MrjGrid, field effect transistor MrjSource electrode ground connection；Resistance RsjThe other end
Connect ground capacity Coj, resistance RtjAnd field effect transistor MsjGrid, field effect transistor MsjSource electrode connection field-effect it is brilliant
Body pipe MrjDrain electrode；Resistance RtjThe other end connect ground capacity Ctj, resistance RpjAnd field effect transistor MtjGrid, field effect
Answer transistor MtjSource electrode connect field effect transistor MsjDrain electrode；Resistance RpjThe other end connects field effect transistor MtjLeakage
Pole, inductance LejThe output end of power amplification network, inductance L are stacked with N field-effect tube Darlington threeejThe other end be also connected with
Field effect transistor MdjDrain electrode, wherein N mono-, two, three and four, j=1,2,3 and 4.
Exporting four tunnel transformation coupled powers synthesis network includes transformer T2Equal elements, transformer T2The first secondary coil
Non-same polarity and transformer T2Second subprime coil Same Name of Ends pass through capacitor Cout1Connection, transformer T2First grade
The Same Name of Ends and transformer T of coil2Second subprime coil non-same polarity pass through capacitor Cout2Connection, transformer T2First
The centre tap point of secondary coil connects inductance Ld1, inductance Ld1The other end connect ground capacity Cd1With bias voltage Vd；Transformation
Device T2Second subprime coil centre tap point connect inductance Ld2, inductance Ld2The other end connect ground capacity Cd2And biasing
Voltage Vd；Transformer T2Primary coil non-same polarity ground connection, transformer T2Primary coil Same Name of Ends connection output four tunnels
Transformation coupled power synthesizes the output end of network, transformer T2The first secondary coil Same Name of Ends and non-same polarity be separately connected
Export the first input end and the second input terminal of four tunnel transformation coupled powers synthesis network, transformer T2Second subprime coil
Non-same polarity and Same Name of Ends are separately connected the third input terminal and the 4th input terminal of output four tunnel transformation coupled powers synthesis network.
Concrete operating principle and process of the invention are introduced below with reference to Fig. 2:
Radio-frequency input signals passes through input terminal RFinInto circuit, by four tunnel transformation coupled powers of input synthesize network into
After row impedance Transformation Matching, enters first to fourth field-effect tube Darlington three stacking power simultaneously in the form of differential signal and put
The input terminal of big network, after carrying out power amplification by amplification network, simultaneously from first to fourth in the form of differential signal
Effect pipe Darlington three stacks the output end output of power amplification network, synthesizes network using four tunnel transformation coupled powers of output
Afterwards, by four road signals synthesize all the way single-ended signal from output end RFoutOutput.
Analyzed based on foregoing circuit, a kind of high-power enhancement mode field effect transistor power amplifier proposed by the present invention with
The previous amplifier architecture based on integrated circuit technology is the difference is that core architecture uses the enhanced of difference form
The three of field effect transistor stack Darlington transistor:
Three stacking Darlington transistors of difference form are very different in structure with traditional one-transistor, are not done herein superfluous
It states；
The three of difference form stack Darlington transistors and Cascode difference amplifier the difference is that: Cascode crystal
The piled grids compensating electric capacity of the total bank tube of pipe is the biggish capacitor of capacitance, for realizing the AC earth of grid, and difference shape
The three of formula stack the darlington structure that Darlington transistor stacks amplifier using common-source amplifier compound three, substantially increase circuit
High-frequency gain and power capacity.
In entire high-power enhancement mode field effect transistor power amplifier, the size of transistor and other resistance, electricity
The size of appearance is determined after the indices such as the gain for comprehensively considering entire circuit, bandwidth and output power, and the later period is passed through
Required indices can be better achieved in layout design and rational deployment, realize in high-power output ability, high power
Gain, good input and output matching properties.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (4)
1. a kind of high-power enhancement mode field effect transistor power amplifier, which is characterized in that including input four tunnel transformations coupling
Power synthesis network, the first field-effect tube Darlington three stack power amplification network, the second field-effect tube Darlington three stacks function
Rate amplifies network, third field-effect tube Darlington three stacks power amplification network, the 4th field-effect tube Darlington three stacks power
Amplify network and four tunnel transformation coupled powers of output synthesize network；
The input terminal of the input four tunnel transformation coupled powers synthesis network is the input terminal of the entire power amplifier, the
The input terminal that one output end and the first field-effect tube Darlington three stack power amplification network connect, second output terminal and
The second field-effect tube Darlington three stacks the input terminal connection of power amplification network, third output end and the third field
Effect pipe Darlington three stacks the input terminal connection of power amplification network, and the 4th output end and the 4th field-effect tube reach woods
The input terminals that three stack power amplification networks that pause connect；
The output end that the first field-effect tube Darlington three stacks power amplification network couples function with four tunnel transformations of the output
Rate synthesizes the first input end connection of network；The second field-effect tube Darlington three stack the output end of power amplification network with
The second input terminal connection of the output four tunnel transformation coupled powers synthesis network；The third field-effect tube Darlington three stacks
The output end of power amplification network is connected with the third input terminal that four tunnel transformation coupled powers of the output synthesize network；Described
The output end that four field-effect tube Darlingtons three stack power amplification network synthesizes network with four tunnel transformation coupled powers of the output
The 4th input terminal connection；
The output end of the output four tunnel transformation coupled powers synthesis network is the output end of the entire power amplifier.
2. a kind of high-power enhancement mode field effect transistor power amplifier according to claim 1, which is characterized in that institute
State the input terminal connection inductance L of input four tunnel transformation coupled powers synthesis network1, inductance L1The other end connect inductance L2With connect
Ground capacitor C1, inductance L2The other end connect coupling transformer T1The Same Name of Ends of primary coil, transformer T1Primary coil it is non-
Same Name of Ends ground connection；Transformer T1The first secondary coil Same Name of Ends connection input four tunnel transformation coupled powers synthesis network the
One output end, transformer T1The non-same polarity of the first secondary coil input the second defeated of four tunnel transformation coupled powers synthesis network
Outlet, transformer T1Second subprime coil Same Name of Ends connection input four tunnel transformation coupled powers synthesis network third output
End, transformer T1Second subprime coil non-same polarity connection input four tunnel transformation coupled powers synthesis network the 4th output
End；Connect transformer T1The first, second secondary coil centre tap ground connection.
3. a kind of high-power enhancement mode field effect transistor power amplifier according to claim 1, which is characterized in that institute
State the input terminal connection capacitor C that N field-effect tube Darlington three stacks power amplification networkdj, capacitor CdjThe other end connect field
Effect transistor MdjGrid, resistance RgjWith ground resistance Rdj, resistance RgjThe other end connect field effect transistor MdjLeakage
Pole；Field effect transistor MdjSource electrode connect ground resistance RojWith capacitor Coj, capacitor Co1The other end connect capacitor Rsj, ground connection
Resistance RqjAnd field effect transistor MrjGrid, field effect transistor MrjSource electrode ground connection；Resistance RsjThe other end connect ground connection
Capacitor Coj, resistance RtjAnd field effect transistor MsjGrid, field effect transistor MsjSource electrode connect field effect transistor Mrj
Drain electrode；Resistance RtjThe other end connect ground capacity Ctj, resistance RpjAnd field effect transistor MtjGrid, field effect transistor
Pipe MtjSource electrode connect field effect transistor MsjDrain electrode；Resistance RpjThe other end connects field effect transistor MtjDrain electrode, inductance
LejThe output end of power amplification network, inductance L are stacked with N field-effect tube Darlington threeejThe other end be also connected with field-effect crystalline substance
Body pipe MdjDrain electrode, wherein N mono-, two, three and four, j=1,2,3 and 4.
4. a kind of high-power enhancement mode field effect transistor power amplifier according to claim 1, which is characterized in that institute
Stating output four tunnel transformation coupled powers synthesis network includes transformer T2, transformer T2The first secondary coil non-same polarity and
Transformer T2Second subprime coil Same Name of Ends pass through capacitor Cout1Connection, transformer T2The first secondary coil Same Name of Ends
With transformer T2Second subprime coil non-same polarity pass through capacitor Cout2Connection, transformer T2The first secondary coil in
Between tapping point connect inductance Ld1, inductance Ld1The other end connect ground capacity Cd1With bias voltage Vd；Transformer T2Second
The centre tap point of grade coil connects inductance Ld2, inductance Ld2The other end connect ground capacity Cd2With bias voltage Vd；Transformer
T2Primary coil non-same polarity ground connection, transformer T2Primary coil Same Name of Ends connection four tunnel transformations of the output couple
The output end of power synthesis network, transformer T2The first secondary coil Same Name of Ends and non-same polarity be separately connected the output
Four tunnel transformation coupled powers synthesize the first input end and the second input terminal of network, transformer T2Second subprime coil it is non-same
Name end and Same Name of Ends are separately connected the third input terminal and the 4th input terminal of the output four tunnel transformation coupled powers synthesis network.
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| CN201910726726.6A CN110324011A (en) | 2019-08-07 | 2019-08-07 | A kind of high-power enhancement mode field effect transistor power amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113556092A (en) * | 2021-09-16 | 2021-10-26 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier based on transformer matching network |
| CN113556092B (en) * | 2021-09-16 | 2021-12-31 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier based on transformer matching network |
| CN114362685A (en) * | 2021-12-14 | 2022-04-15 | 成都嘉纳海威科技有限责任公司 | Power amplifier based on high Q value differential coupling technology |
| CN114362685B (en) * | 2021-12-14 | 2022-09-20 | 成都嘉纳海威科技有限责任公司 | Power amplifier based on high Q value differential coupling technology |
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Application publication date: 20191011 |