CN108649913A - A kind of Darlington distributed power amplifier based on linearisation Stack Technology - Google Patents
A kind of Darlington distributed power amplifier based on linearisation Stack Technology Download PDFInfo
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- CN108649913A CN108649913A CN201810817837.3A CN201810817837A CN108649913A CN 108649913 A CN108649913 A CN 108649913A CN 201810817837 A CN201810817837 A CN 201810817837A CN 108649913 A CN108649913 A CN 108649913A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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Abstract
The invention discloses a kind of Darlington distributed power amplifiers based on linearisation Stack Technology, amplify network including distributed linear stacked Darlington transistor, linearize stacked Darlington transistor input distribution network, linearize stacked Darlington transistor output synthesis network, core architecture of the present invention amplifies network using distributed linear stacked Darlington transistor, the amplification network is at least made of three distributed Darlington pipes based on linearisation Stack Technology, simultaneously, the present invention considers two-transistor linearisation stacked Darlington transistor for inputting the influence with the equivalent capacity of output artificial transmission line, substantially increase the accuracy of circuit design, reduce the difficulty of circuit later stage debugging, so that entire power amplifier obtains good broadband power fan-out capability and power gain ability, improve the Stability and dependability of circuit.
Description
Technical field
The present invention relates to hetero-junction bipolar transistor radio-frequency power amplifier and integrated circuit fields, especially for super
A kind of high efficiency of the transmitting module application of broadband transceiver end, the distributed power amplifier of high-output power, high-gain.
Background technology
As the military electronics such as electronic warfare, software radio, ultra-wideband communications, WLAN (WLAN) are fought and are led to
The fast development of letter, commercial communication market, radio frequency front-end transceiver also develop to high-performance, highly integrated, low-power consumption direction.Cause
The radio frequency of the urgent demand transmitter in this market and microwave power amplifier have ultra wide band, high-output power, high efficiency, it is low at
The performances such as this, and integrated circuit is exactly to be expected to meet the key technology of the market demand.
However, when realizing radio frequency with microwave power amplifier chip circuit using integrated circuit technology design, performance
Certain restriction, major embodiment are received with cost：
(1) high-power high-efficiency amplifying power is limited：The characteristic frequency of transistor is higher and higher in semiconductor technology, thus
Low breakdown voltage is brought to limit the power capacity of one-transistor.In order to obtain power capabilities, generally require more
Road transistor power synthesis, but since the energy loss that multichannel synthesizes network causes the efficiency of power amplifier relatively low, because
This high power, high efficiency ability are poor.
(2) ultra-wideband high power amplifying power is limited：Multiple transistor powers are just needed to synthesize to meet high power index,
But the load impedance of multichannel synthesis substantially reduces, so as to cause very high impedance transformation ratio；It is real under high impedance conversion ratio
Existing broadband character is greatly to challenge.
The circuit structure of common ultra-wideband high power amplifier has very much, most typically traditional distributed amplifier,
But the requirement that traditional distributed amplifier will meet parameters simultaneously is very difficult, is primarily due to：
1. in traditional distributed power amplifier, core amplifying circuit is that multiple single-transistors use distributed air-defense
The mode of arrangement is realized, since single-transistor is influenced by parasitic parameter, when being increased with working frequency, and power gain meeting
It significantly reduces while power characteristic etc. also can significantly deteriorate, therefore in order to obtain the flat enlarged structure of ultra wide band, it is necessary to is sacrificial
Domestic animal low-frequency gain carrys out balanced high-frequency loss, causes the ultra wide band gain of traditional distributed amplifier very low；
2. in order to improve the influence that amplifier gain improves isolation, also has and put using Cascode pair transistor distributions
Big structure, but although Cascode pair transistors increase circuit isolation, but can not gain become with what frequency significantly deteriorated
Gesture also cannot achieve the optimum impedance matching between Cascode pair transistors, to reduce characteristics of output power.
It can thus be seen that the ultra-wide band radio-frequency Designing power amplifier difficult point based on integrated circuit technology is：Ultra wide band
Lower high-power output difficulty is larger；The distributed amplification structure of traditional single transistor structure or Cascode transistors exists very
More limitations.
Invention content
Technical problem to be solved by the invention is to provide a kind of Darlington distribution work(based on linearisation Stack Technology
Rate amplifier has ultra-wide the advantages of combining based on the Darlington transistor and distributed amplifier for linearizing Stack Technology
With lower high-power output ability, high power gain, it is good input, output matching properties, and it is at low cost the advantages that.
The technical solution that the present invention solves above-mentioned technical problem is as follows：A kind of Darlington point based on linearisation Stack Technology
Cloth power amplifier, which is characterized in that including distributed linear stacked Darlington transistor amplification network, linearisation stacked
Darlington transistor input distribution network, linearisation stacked Darlington transistor output synthesis network, distributed linear stacked reach woods
The pipe amplification network that pauses is made of k linearisation stacked Darlington transistor, and wherein k is more than or equal to 3；
The input terminal of linearisation stacked Darlington transistor input distribution network is entirely reaching based on linearisation Stack Technology
The input terminal of Islington distributed power amplifier, k output end amplify with distributed linear stacked Darlington transistor respectively
The input terminal connection of k linearisation stacked Darlington transistor in network；
The output end of linearisation stacked Darlington transistor output synthesis network is entirely reaching based on linearisation Stack Technology
The output end of Islington distributed power amplifier, k input terminal amplify with distributed linear stacked Darlington transistor respectively
The output end connection of k linearisation stacked Darlington transistor in network.
The beneficial effects of the invention are as follows：Core architecture of the present invention is using the distributed linearisation based on linearisation Stack Technology
Stacked Darlington transistor amplifies network, which is at least made of three linearisation stacked Darlington transistors, linearizes heap
Stack-type Darlington transistor is constituted according to the structure of compound two stacked transistors of single common source transistors, meanwhile, the present invention considers base
In linearizing influence of the linearisation stacked Darlington transistor of Stack Technology for the equivalent capacity of artificial transmission line, electricity is improved
The accuracy of road design, reduces the difficulty of circuit later stage debugging so that entire power amplifier obtains good broadband work(
Rate fan-out capability and power gain ability avoid the low breakdown voltage characteristic of integrated circuit technology, improve the stability of circuit
With reliability.
Further, linearisation stacked Darlington transistor input distribution network includes the inductance L being sequentially connected in seriesg1、Lg2Extremely
Lgk+1, capacitance CgloadWith load resistance Rgload, load resistance RgloadOne end and capacitance CglOad connections are another simultaneously
End ground connection, inductance Lg1One end and Lg2The other end is the input for linearizing stacked Darlington transistor input distribution network simultaneously for connection
End, inductance LgjWith Lgj+1Connecting node be linearize stacked Darlington transistor input distribution network output end, wherein j=
1,2…k。
The advantageous effect of above-mentioned further scheme is：The linearisation stacked Darlington transistor input distribution net that the present invention uses
Network is other than it can realize the distributed power of input radio frequency signal and distribute, moreover it is possible to carry out impedance matching to radio-frequency input signals and carry
The stability of high circuit.
Further, distributed linear stacked Darlington transistor amplification network includes k linearisation stacked Darlington
It manages, first order common source pipe M is contained in j-th of linearisation stacked Darlington transistorij, second level stacked tubes Mdj, the third level stack
Pipe Muj, wherein j=1,2 ... k, common source pipe MijDrain electrode and stacked tubes MujDrain electrode be directly connected to, stacked tubes MdjDrain electrode and heap
Folded pipe MujSource electrode be directly connected to, j-th linearisation stacked Darlington transistor input terminal and common source pipe MijGrid by every
Straight capacitance CijConnection, common source pipe MijSource electrode and stacked tubes MdjGrid between be directly connected to, stacked tubes MdjSource electrode directly connect
Ground, the output end and stacked tubes M of j-th of linearisation stacked Darlington transistorujDrain electrode connection；First order common source pipe MijGrid
Pole and capacitance CijConnecting node, with bias voltage Vg1Between pass through biasing resistor RbjConnection, common source pipe MijGrid and
It is connected by the first series RC circuit between drain electrode, while common source pipe MijGrid and drain electrode between also pass through biasing resistor Rrj
Connection, the first series RC circuit and biasing resistor RrjFor parallel relationship, the first series RC circuit includes concatenated feedback resistance Rfj
With feedback capacity Cfj, common source pipe MijIt is connected to ground by the second series RC circuit between source electrode and ground, the second series RC circuit packet
Containing concatenated self-bias resistor RsjWith shunt capacitance Csj；Self-bias resistor R in second series RC circuitsjWith automatic biasing capacitance Csj
Tie point and bias voltage Vg2Connection.Stacked tubes MujGrid and ground between connected by third series RC circuit, third string
It includes concatenated self-bias resistor R to join RC circuitsajWith matching capacitance Caj, self-bias resistor RajWith matching capacitance CajConnection section
Point passes through biasing resistor R in sequential series with j-th of linearisation stacked Darlington transistor output endujWith biasing resistor RdjEven
It connects, biasing resistor RujWith biasing resistor RdjConnecting node pass through biasing resistor RdjIt is connected to ground.
The advantageous effect of above-mentioned further scheme is：Linearize two stacking field-effect tube structures in stacked Darlington transistor
Grid compensating electric capacity is the smaller capacitance of capacitance, for realizing the synchronous hunting of grid voltage, can improve output power, is realized
Two stack the impedance matching between field-effect tube, while obtaining good high frequency characteristics and stabilizing circuit.Simultaneously based on linearisation
Biasing networks can improve the linearisation index of two stacking Darlington transistors.
Further, linearisation stacked Darlington transistor output synthesis network includes the load resistance R being sequentially connected in seriesdload、
Capacitance Cdload, inductance Ld1、Ld2To Ldk+1, capacitance Cd, load resistance RdloadOne end and capacitance CdloadConnection is same
When the other end be grounded, capacitance CdOne end and Ldk+1The other end is linearisation stacked Darlington transistor output synthesis simultaneously for connection
The output end of network, inductance LdjWith Ldj+1Connecting node be linearize stacked Darlington transistor output synthesis network input
End, wherein j=1,2 ... k, inductance Ld1And Ld2Connecting node on be also parallel with feed inductance Ldd, feed inductance LddThe other end
Meet bias voltage Vdd。
The advantageous effect of above-mentioned further scheme is：It considers the linearisation stacked based on linearisation Stack Technology and reaches woods
The pipe that pauses synthesizes output the influence of the equivalent capacity of network, the accuracy of circuit design is substantially increased, after reducing circuit
The difficulty of phase debugging.
Description of the drawings
Fig. 1 is power amplifier functional block diagram of the present invention；
Fig. 2 is power amplifier circuit figure of the present invention.
Specific implementation mode
Carry out detailed description of the present invention illustrative embodiments with reference to the drawings.It should be appreciated that shown in attached drawing and
The embodiment of description is only exemplary, it is intended that is illustrated the principle and spirit of the invention, and is not limited the model of the present invention
It encloses.
An embodiment of the present invention provides a kind of Darlington distributed power amplifiers based on linearisation Stack Technology, such as scheme
Shown in 1, including distributed linear stacked Darlington transistor amplification network, linearisation stacked Darlington transistor input distribution net
Network, linearisation stacked Darlington transistor output synthesis network, distributed linear stacked Darlington transistor amplify network by k line
Property stacked Darlington transistor composition, wherein k be more than or equal to 3；Linearize the input of stacked Darlington transistor input distribution network
End for entirely based on linearisation Stack Technology Darlington distributed power amplifier input terminal, k output end respectively with
Distributed linear stacked Darlington transistor amplifies the input terminal connection of k linearisation stacked Darlington transistor in network；Line
Property stacked Darlington transistor output synthesis network output end be that Darlington entirely based on linearisation Stack Technology is distributed
The output end of power amplifier, k input terminal amplify k in network with distributed linear stacked Darlington transistor respectively
Linearize the output end connection of stacked Darlington transistor.
As shown in Fig. 2, linearisation stacked Darlington transistor input distribution network includes the inductance L being sequentially connected in seriesg1、Lg2Extremely
Lgk+1, capacitance CgloadWith load resistance Rgload, load resistance RgloadOne end and capacitance CgloadConnection while the other end
Ground connection, inductance Lg1One end and Lg2The other end is the input terminal for linearizing stacked Darlington transistor input distribution network simultaneously for connection,
Inductance LgjWith Lgj+1Connecting node be linearize stacked Darlington transistor input distribution network output end, wherein j=1,
2…k。
It includes k linearisation stacked Darlington transistor, j-th of line that distributed linear stacked Darlington transistor, which amplifies network,
First order common source pipe M is contained in property stacked Darlington transistorij, second level stacked tubes Mdj, third level stacked tubes Muj, wherein j
=1,2 ... k, common source pipe MijDrain electrode and stacked tubes MujDrain electrode be directly connected to, stacked tubes MdjDrain electrode and stacked tubes MujSource
Pole is directly connected to, the input terminal and common source pipe M of j-th of linearisation stacked Darlington transistorijGrid pass through capacitance CijEven
It connects, common source pipe MijSource electrode and stacked tubes MdjGrid between be directly connected to, stacked tubes MdjSource electrode be directly grounded, j-th of line
The output end and stacked tubes M of property stacked Darlington transistorujDrain electrode connection；First order common source pipe MijGrid and blocking electricity
Hold CijConnecting node, with bias voltage Vg1Between pass through biasing resistor RbjConnection, common source pipe MijGrid and drain electrode between lead to
Cross the connection of the first series RC circuit, while common source pipe MijGrid and drain electrode between also pass through biasing resistor RrjConnection, the first string
Join RC circuits and biasing resistor RrjFor parallel relationship, the first series RC circuit includes concatenated feedback resistance RfjAnd feedback capacity
Cfj, common source pipe MijBe connected to ground by the second series RC circuit between source electrode and ground, the second series RC circuit include it is concatenated from
Biasing resistor RsjWith shunt capacitance Csj；Self-bias resistor R in second series RC circuitsjWith automatic biasing capacitance CsjTie point with
Bias voltage Vg2Connection.Stacked tubes MujGrid and ground between connected by third series RC circuit, third series RC circuit packet
Containing concatenated self-bias resistor RajWith matching capacitance Caj, self-bias resistor RajWith matching capacitance CajConnecting node, with j-th
Stacked Darlington transistor output end is linearized, biasing resistor R in sequential series is passed throughujWith biasing resistor RdjConnection, biasing resistor
RujWith biasing resistor RdjConnecting node pass through biasing resistor RdjIt is connected to ground.Linearize the output synthesis of stacked Darlington transistor
Network includes the load resistance R being sequentially connected in seriesdload, capacitance Cdload, inductance Ld1、Ld2To Ldk+1, capacitance Cd, load
Resistance RdloadOne end and capacitance CdloadThe other end is grounded simultaneously for connection, capacitance CdOne end and Ldk+1Connection is another simultaneously
End is the output end of linearisation stacked Darlington transistor output synthesis network, inductance LdjWith Ldj+1Connecting node be linearisation
The input terminal of stacked Darlington transistor output synthesis network, wherein j=1,2 ... k, in the connecting node of inductance Ld1 and Ld2 also simultaneously
It is associated with feed inductance Ldd, feed inductance LddAnother termination bias voltage Vdd。
Method in circuit of the present invention for solving key circuit parameters in the power amplifier is：
(1) the equivalent transistor end input capacitance C of stacked Darlington transistor is linearizedink：
Wherein,
(2) the equivalent transistor end output capacitance C of stacked Darlington transistor is linearizedoutk：
(6) linearisation stacked Darlington transistor outputs and inputs artificial transmission line's inductance LdiAnd Lgi：
In above-mentioned formula, k is integer, k >=3；Z0For the characteristic impedance of micro-strip, stacked Darlington is linearized at k-th
Guan Zhong, CgsFor the grid source equivalent input capacitance of transistor, CdsFor the drain-source equivalent output capacitance of transistor, unit is pF, under
" ik, dk, uk " respectively represent the common source pipe M in k-th affiliated of linearisation stacked Darlington transistor to markik, stacked tubes Mdk, heap
Folded pipe Muk。
The concrete operating principle and process of the present invention are introduced with reference to Fig. 2：
Radio-frequency input signals enters circuit by input terminal IN, and grid artificial transmission line is entered in a manner of current distribution formula
Lgj、Lg(j+1), wherein j=1,2 ... k, by inputting blocking coupled capacitor CijInto common source pipe MijGrid, then with electric current point
Cloth enters the second level stacked tubes M of distributed linear stacked Darlington transistor amplification networkdjGrid, then with current distribution
Formula is from third level stacked tubes MujDrain electrode output, drain electrode artificial transmission line L is finally entered in a manner of current distribution formuladj、
Ld(j+1), pass through the blocking coupled capacitor C that drainsdIt is exported from output end OUT.
It is analyzed based on foregoing circuit, the Darlington distributed power amplification proposed by the present invention based on linearisation Stack Technology
Device is with the previous amplifier architecture based on integrated circuit technology the difference is that core architecture uses distributed linear
Stacked Darlington transistor amplifies network：
Linearisation stacked Darlington transistor has very very much not with traditional one-transistor and Cascode transistors in structure
Together, it is not repeated herein；
Stacked Darlington transistor is linearized with traditional Darlington transistor the difference is that：The second level in traditional Darlington transistor
For one-transistor either Cascode transistors, the base stage compensating electric capacity of linearisation stacked Darlington transistor is that capacitance is smaller
Capacitance, for realizing the synchronous hunting of base voltage, and the stacking base stage compensating electric capacity of Cascode transistors is that capacitance is larger
Capacitance, for realizing the AC earth of base stage.
In the distributed power amplifier circuit entirely based on linearisation Stack Technology, the size of field-effect is straight with other
Current feed resistance, compensating electric capacity size be the indices such as the gain for considering entire circuit, bandwidth and output power after
It determines, by the layout design and rational deployment in later stage, required indices can be better achieved, realize in ultra-wide
High-power output ability, high power gain, good input and output matching properties under conditional, chip area be small and cost
It is low.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (4)
1. a kind of Darlington distributed power amplifier based on linearisation Stack Technology, which is characterized in that including distributed line
Property stacked Darlington transistor amplification network, linearisation stacked Darlington transistor input distribution network and linearisation stacked reach woods
Pause pipe output synthesis network, and the distributed linear stacked Darlington transistor amplification network linearizes stacked up to woods by k
Pause pipe composition, and wherein k is more than or equal to 3；
The input terminal of the linearisation stacked Darlington transistor input distribution network is entire described based on linearisation Stack Technology
Darlington distributed power amplifier input terminal, k output end respectively with distributed linear stacked Darlington transistor
Amplify the input terminal connection of k linearisation stacked Darlington transistor in network；
The output end of the linearisation stacked Darlington transistor output synthesis network is entire described based on linearisation Stack Technology
Darlington distributed power amplifier output end, k input terminal respectively with distributed linear stacked Darlington transistor
Amplify the output end connection of k linearisation stacked Darlington transistor in network.
2. the Darlington distributed power amplifier according to claim 1 based on linearisation Stack Technology, feature exist
In the linearisation stacked Darlington transistor input distribution network includes the inductance L being sequentially connected in seriesg1、Lg2To Lgk+1, capacitance
CgloadWith load resistance Rgload, the load resistance RgloadOne end and capacitance CgloadThe other end is grounded simultaneously for connection, described
Inductance Lg1One end and Lg2The other end is the input terminal for linearizing stacked Darlington transistor input distribution network simultaneously for connection, described
Inductance LgjWith Lgj+1Between connecting node be linearize stacked Darlington transistor input distribution network output end, wherein j
=1,2 ... k.
3. the Darlington distributed power amplifier according to claim 1 based on linearisation Stack Technology, feature exist
In the distributed linear stacked Darlington transistor amplification network includes k linearisation stacked Darlington transistor；
First order common source pipe M is contained in j-th of linearisation stacked Darlington transistorij, second level stacked tubes Mdj, the third level
Stacked tubes Muj, wherein j=1,2 ... k, common source pipe MijDrain electrode and stacked tubes MujDrain electrode be directly connected to, stacked tubes MdjDrain electrode
With stacked tubes MujSource electrode be directly connected to, it is described j-th linearisation stacked Darlington transistor input terminal and common source pipe MijGrid
Pole passes through capacitance CijConnection, common source pipe MijSource electrode and stacked tubes MdjGrid between be directly connected to, stacked tubes MdjSource
Pole is directly grounded, the output end and stacked tubes M of j-th of linearisation stacked Darlington transistorujDrain electrode connection；
The first order common source pipe MijGrid and capacitance CijConnecting node, with bias voltage Vg1Between pass through biasing
Resistance RbjConnection, common source pipe MijGrid and drain electrode between connected by the first series RC circuit, while common source pipe MijGrid
Also pass through biasing resistor R between drain electroderjConnection, the first series RC circuit and biasing resistor RrjFor parallel relationship, described first
Series RC circuit includes concatenated feedback resistance RfjWith feedback capacity Cfj, common source pipe MijPass through the second series connection between source electrode and ground
RC circuits are connected to ground, and second series RC circuit includes concatenated self-bias resistor RsjWith shunt capacitance Csj；Described second
Self-bias resistor R in series RC circuitsjWith automatic biasing capacitance CsjTie point and bias voltage Vg2Connection.
The stacked tubes MujGrid and ground between connected by third series RC circuit, the third series RC circuit include string
The self-bias resistor R of connectionajWith matching capacitance Caj, self-bias resistor RajWith matching capacitance CajConnecting node, with described j-th
Stacked Darlington transistor output end is linearized, biasing resistor R in sequential series is passed throughujWith biasing resistor RdjConnection, the biasing
Resistance RujWith biasing resistor RdjConnecting node pass through biasing resistor RdjIt is connected to ground.
4. the Darlington distributed power amplifier according to claim 1 based on linearisation Stack Technology, feature exist
In the linearisation stacked Darlington transistor output synthesis network includes the load resistance R being sequentially connected in seriesdload, capacitance
Cdload, inductance Ld1、Ld2To Ldk+1, capacitance Cd, the load resistance RdloadOne end and capacitance CdloadConnection is another simultaneously
One end is grounded, the capacitance CdOne end and Ldk+1The other end is linearisation stacked Darlington transistor output synthesis simultaneously for connection
The output end of network, the inductance LdjWith Ldj+1Connecting node be linearisation stacked Darlington transistor output synthesis network
Input terminal, wherein j=1,2 ... k, the inductance Ld1And Ld2Connecting node on be also parallel with feed inductance Ldd, feed inductance Ldd
Another termination bias voltage Vdd。
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| CN110299894A (en) * | 2019-08-07 | 2019-10-01 | 青海民族大学 | A kind of high-gain and high-power transformation synthesis power amplifier |
| CN110324011A (en) * | 2019-08-07 | 2019-10-11 | 青海民族大学 | A kind of high-power enhancement mode field effect transistor power amplifier |
| CN110365298A (en) * | 2019-08-07 | 2019-10-22 | 青海民族大学 | A kind of millimeter-wave power amplifiers being distributed active transformation synthesis |
| CN112865717A (en) * | 2021-01-15 | 2021-05-28 | 青海民族大学 | High-gain power amplifier based on self-adaptive linearization technology |
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| CN110365298A (en) * | 2019-08-07 | 2019-10-22 | 青海民族大学 | A kind of millimeter-wave power amplifiers being distributed active transformation synthesis |
| CN112865717A (en) * | 2021-01-15 | 2021-05-28 | 青海民族大学 | High-gain power amplifier based on self-adaptive linearization technology |
| CN112865717B (en) * | 2021-01-15 | 2022-06-10 | 青海民族大学 | High-gain power amplifier based on self-adaptive linearization technology |
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