CN106533367A - High-gain CMOS low-noise amplifier for TD-LTE (Time Division Long Term Evolution) - Google Patents
High-gain CMOS low-noise amplifier for TD-LTE (Time Division Long Term Evolution) Download PDFInfo
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- CN106533367A CN106533367A CN201610973417.5A CN201610973417A CN106533367A CN 106533367 A CN106533367 A CN 106533367A CN 201610973417 A CN201610973417 A CN 201610973417A CN 106533367 A CN106533367 A CN 106533367A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/307—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in push-pull amplifiers
- H03F1/308—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in push-pull amplifiers using MOSFET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Abstract
The invention discloses a high-gain CMOS low-noise amplifier for TD-LTE (Time Division Long Term Evolution). The high-gain CMOS low-noise amplifier is of a fully-integrated two-stage cascaded structure, a first stage of amplification circuit adopts a source inductive feedback-type cascode structure of a shunt capacitor, and a second stage of amplification circuit adopts an inductance peaking cascode structure, wherein a single-ended radio frequency signal is fed into the second stage of amplification circuit by an inter-stage matching unit after being subjected to input matching and amplification by the first stage of amplification circuit, then secondary amplification and output matching of the single-ended radio frequency signal are completed, and finally, a radio frequency signal is output. The low-noise amplifier is high in integration of a chip and low in cost; compared with a conventional source inductive feedback-type cascode structure, the structure adopted by the high-gain CMOS low-noise amplifier obtains an ultra-low noise coefficient and improves system sensitivity; according to the high-gain CMOS low-noise amplifier disclosed by the invention, when a gain of the low-noise amplifier is improved, isolation is improved so as to inhibit interference of an output signal to an input and benefit for inhibiting noise of a post frequency mixer; and crosstalk of a power supply to an input signal is eliminated.
Description
Technical field
The present invention relates to the technical field of radio frequency low-noise amplifier, more particularly to a kind of TD-LTE system Band38 (D frequencies
Section, 2570～2620MHz) and Band40 (E frequency ranges, 2300-2400MHz) CMOS low-noise amplifiers.
Background technology
As developing rapidly for the communication technology, and user are improved constantly to the performance requirement of wireless communication terminal, with
WCDMA cannot meet demand of the user to mass data for the 3G communications of core.From International Telecommunication Union's channel radio in 2010
Since letter department establishes the TD-LTE (time-division long term evolution) with China's independent intellectual property right as 4G international standards, domestic nothing
The research emphasis of line communication are progressively transferred in 4G mobile communication.As one kind with OFDM (orthogonal frequency division multiplexi) and
4G mobile communication solution of MIMO (multiple-input and multiple-output) technology for core, TD-LTE have higher than WCDMA system
Traffic rate (downlink peak rates are 100Mbps, upper behavior 50Mbps), and the availability of frequency spectrum is high, network delay is little, cover model
Enclose wide, thus there is broader practice market.
Used as the active module embedded therein in receives link foremost, the performance of low-noise amplifier directly affects TD-LTE system and connects
The parameter index of receiving end.To ensure the overall performance of receives link, usually require that low-noise amplifier has high gain, low
Power consumption and the big linearity.For this purpose, researcher is energetically explored in terms of technique realization and circuit structure etc..Due to
Low noiseproof feature and fast frequency response, are partly led using compounds such as GaAs HBT, HEMT more than the low-noise amplifier of early stage
Body technology design is realized.Although this kind of low-noise amplifier has excellent performance, process costs are high, integrated level is low, it is difficult to
With baseband chip single-chip integration, thus it is unfavorable for device miniaturization.With the continual reductions of characteristic size, deep-submicron CMOS device
The cut-off frequency of part has been close to hundred GHz.Therefore, can be designed that suitable for TD-LTE system completely using conventional CMOS technology
The low-noise amplifier of requirement.
In recent years, researcher has carried out numerous studies in terms of the circuit structure of CMOS low-noise amplifiers, noise,
Carry out in terms of gain and bandwidth compromise well.For example, lower noise is obtained using difference channel structure, but this is to technique
Precision and design tactics propose harsh requirement, and increased design complexities, and obtain the gain same with single-ended structure needs
Want the power consumption and chip area of twice.
Additionally, also there is the list that some adopt cascode structure and common source configuration respectively as first and second grade of amplifying circuit
The report of end low-noise amplifier design, although certain gain can be obtained, and is easily achieved output impedance matching, adopts
The first order circuit of traditional cascode structure is difficult to noise resistance matching and high gain.
The content of the invention
The invention provides a kind of high-gain CMOS low-noise amplifier for TD-LTE, the present invention is in existing research
On the basis of, using the source inductive feedback type cascode structure of shunt capacitance, devise it is a be applied to TD-LTE system, while
The CMOS low-noise amplifiers of low-noise factor and high-gain are realized, it is described below：
A kind of high-gain CMOS low-noise amplifier for TD-LTE, the low-noise amplifier is fully integrated two-stage
Cascade structure, the low-noise amplifier include：First order amplifying circuit, second level amplifying circuit, also including interstage matched list
Unit and biasing circuit；
Source inductive feedback type cascode structure of the first order amplifying circuit using shunt capacitance, the second level is put
Cascode structure of the big circuit using inductor peaking；
Wherein, after single-ended radio frequency signal first order amplifying circuit described in is realized input matching and amplified, by the level
Between matching unit send into the second level amplifying circuit, complete secondary amplification and output matching, finally export radiofrequency signal.
Wherein, the first order amplifying circuit includes：Input pipe M1, inductance LS, inductance LG, shunt capacitance Ct, amplifier tube M2
And inductance LD1, for realizing the noise resistance in bandwidth of operation and input impedance while matching.
Wherein, the second level amplifying circuit employs the cascode structure of inductor peaking, including：Input pipe M3, put
Big pipe M4, inductance LD2With electric capacity CB2, for improving the entire gain and reverse isolation degree of low-noise amplifier.
Wherein, the interstage matched of first and second grade of amplifying circuit is realized using capacitive coupling.
Further, the biasing circuit, by the way of the metal-oxide-semiconductor that diode connects is in series with a resistor, is that two-stage is amplified
Circuit provides direct current biasing.
Further, the low-noise amplifier realizes using the silicon base CMOS technique compatible with digital processing element
It is integrated on the piece of one-level amplifying circuit, second level amplifying circuit, interstage matched unit and biasing circuit.
Compared with the low-noise amplifier for being currently used for TD-LTE system, the invention has the advantages that：
1st, the silicon base CMOS technique compatible with digital processing element is adopted, realizes amplifying circuit, matching unit and biasing
It is integrated on the piece of circuit.Compared with the compound semiconductor process such as existing HBT, HEMT, designed the low noise amplifier chip
Integrated level is high, low cost.
2nd, source inductive feedback type cascode structure of the first order amplifying circuit using shunt capacitance, with traditional source inductance
Feedback-type cascode structure is compared, and is obtained extremely low noise coefficient, is improve system sensitivity.
3rd, cascode structure of the second level amplifying circuit using inductor peaking, is improving the same of low-noise amplifier gain
When increased isolation, so as to suppress output signal to be input into interference, be conducive to suppress rear class frequency mixer noise.
4th, biasing circuit eliminates crosstalk of the power supply to input signal using the mode of bias point series capacitance to ground.
Description of the drawings
Fig. 1 gives the circuit theory diagrams of low-noise amplifier designed by the present invention；
Fig. 2 gives the schematic diagram of the small-signal equivalent circuit of first order amplifying circuit；
Fig. 3 gives the schematic diagram of the noise equivalent circuit of first order amplifying circuit；
Fig. 4 gives the schematic diagram of the simulation result of S parameter；
Fig. 5 gives the schematic diagram of the simulation result of noise coefficient NF；
Fig. 6 gives stability coefficient KfSimulation result schematic diagram.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, further is made to embodiment of the present invention below
Ground is described in detail.
Embodiment 1
A kind of high-gain CMOS low-noise amplifier for TD-LTE, referring to Fig. 1, the high-gain CMOS low noise amplification
Device is the CMOS low-noise amplifiers of fully integrated two-stage cascade structure.
Wherein, source inductive feedback type cascode structure of the first order amplifying circuit using shunt capacitance, the second level is amplified
Cascode structure of the circuit using inductor peaking, also including interstage matched unit and biasing circuit.
Single-ended radio frequency signal VinJing after first order amplifying circuit is realized input matching and amplified, sent by interstage matched unit
Enter second level amplifying circuit, complete secondary amplification and output matching, finally export radiofrequency signal Vout。
Wherein, source inductive feedback type cascode structure of the first order amplifying circuit using shunt capacitance, including：Input pipe
M1, inductance LS, inductance LG, shunt capacitance Ct, amplifier tube M2And inductance LD1, for realize the noise resistance in bandwidth of operation and
Input impedance is matched simultaneously.
Wherein, second level amplifying circuit employs the cascode structure of inductor peaking, including：Input pipe M3, amplifier tube
M4, inductance LD2With electric capacity CB2, for improving the entire gain and reverse isolation degree of low-noise amplifier.
Further, the interstage matched of first and second grade of amplifying circuit is realized using capacitive coupling；Biasing circuit is adopted
The mode that the metal-oxide-semiconductor of diode connection is in series with a resistor provides direct current biasing for two-stage amplifying circuit.
In sum, the low-noise amplifier of embodiment of the present invention design can be used for the D frequency ranges and E frequency of TD-LTE system
Section.The centre frequency of the low-noise amplifier is 2.4GHz, can obtain low noise coefficient and high gain simultaneously.
To the model of each device in addition to specified otherwise is done, the model of other devices is not limited the embodiment of the present invention,
As long as the device of above-mentioned functions can be completed.
Embodiment 2
The scheme in embodiment 1 is described in detail with reference to specific accompanying drawing, it is described below：
Referring to accompanying drawing 1, the embodiment of the present invention is based on standard CMOS process, it is proposed that one kind can be used for TD-LTE system D frequency
The low-noise amplifier of section (2570～2620MHz) and E frequency ranges (2300-2400MHz).Circuit integrated connection is as follows：
The metal-oxide-semiconductor M of diode connection5With resistance R1Series connection, M5Grid leak pole connection resistance R2To metal-oxide-semiconductor M1Grid, MOS
Pipe M5Grid connect a bulky capacitor C5To ground wire.Metal-oxide-semiconductor M2Grid be directly connected to VDD.Power supply VinConnection electric capacity CB1, electricity
Sense LGTo metal-oxide-semiconductor M1Grid, metal-oxide-semiconductor M1Source series inductance LSTo ground wire, drain electrode connection metal-oxide-semiconductor M2Source electrode, metal-oxide-semiconductor M2
Grid connection VDD, drain series inductance LD1To VDD.Metal-oxide-semiconductor M2Drain electrode serial capacitance CB2To input pipe M3Grid, two poles
The metal-oxide-semiconductor M of pipe connection6Series resistance R3To VDD, metal-oxide-semiconductor M6Grid connection electric capacity C6To ground wire, while connecting resistance R4It is extremely defeated
Enter pipe M3Grid；Metal-oxide-semiconductor M3Source electrode connection ground wire, drain electrode be connected to metal-oxide-semiconductor M4Source electrode；Metal-oxide-semiconductor M4Grid be connected to
Resistance R5、R6Tie point；Metal-oxide-semiconductor M4Drain electrode connection inductance LD2To VDD, metal-oxide-semiconductor M4Drain electrode and inductance LD2Junction connect
Meet electric capacity CB3To Vout.Resistance R5、R6Series connection, resistance R5One end is connected to VDD, and the other end is connected to resistance R6It is then attached to ground
Line, in resistance R5And R6Tie point connection electric capacity C7To ground wire, separately draw a wire and be connected to metal-oxide-semiconductor M4Grid.
In order to weaken Miller effect to frequency response and the impact of bandwidth, while higher gain is obtained, to suppress rear class
The noise of circuit, source inductive feedback type cascode structure of the first order amplifying circuit using shunt capacitance, as shown in Figure 1.To the greatest extent
Pipe introduces inductance in the source electrode of cascode amplifier and can reduce gain, but noise resistance and input impedance can be made with source impedance while
Matching.In addition, the introducing of shunt capacitance can also increase design freedom so that the selection of transistor grid width is more flexible.Pass through
The small signal equivalent circuit model of the first order amplifying circuit shown in analysis Fig. 2, can obtain source impedance is：
ZS=RS (3)
Input impedance is：
Zin=s (LS+LG)+1/(sCt+sCgs1)+gm1LS/(Ct+Cgs1) (4)
Wherein, RSFor source impedance；S is complex frequency domain；gm1For metal-oxide-semiconductor M1Mutual conductance, Cgs1For metal-oxide-semiconductor M1Gate-source capacitance.
By the size for adjusting input inductance and electric capacity so as to resonance occurs near 2.4GHz.Now, before formula (4)
Two sums are zero, and,
ZS=RS=gm1LS/(Ct+Cgs1) (5)
So, you can realize the matching of centre frequency input impedance.Due to input impedance ZinImaginary part it is attached in centre frequency
Near change will not produce large effect to input resistant matching, therefore can ensure the input resistant matching in certain bandwidth.
Fig. 3 show the noise equivalent circuit of first order amplifying circuit.Theory analysis shows that its minimum that can be reached is made an uproar
The sound factor：
When low-noise amplifier meets the minimal noise factor, corresponding noise resistance is optimum noise impedance：
Wherein, c is correlation factor, and α, γ, δ are technological parameter；ω is operating frequency；ωTFor cut-off frequency.
From formula (7) as can be seen that optimum noise impedance Z will be madeopt=ZS, then the imaginary part of formula (7) should be zero.From formula (5) and
(7) as can be seen that shunt capacitance CtIntroduce, and metal-oxide-semiconductor M1's
Selection of dimension is more flexible, better controls over circuit power consumption.Additionally, in the case where ensureing that matching performance is constant, shunt capacitance
CtBe introduced intoGAnd LSInductance value, so as to reduce chip area, reduces cost.
In order to further improve gain and the isolation of low-noise amplifier, the embodiment of the present invention is total to using inductor peaking
Source common gate structure is used as second level amplifying circuit.The structure is in metal-oxide-semiconductor M4Drain electrode introduce a larger inductance value inductance LD2, make
Which is high resistant to high-frequency signal, improves output impedance, thus obtains higher circuit gain.Because second level amplifying circuit is to low
The noise contribution of noise amplifier integrated circuit is relatively small, thus without the need for carrying out extra noise matching to which.In order that defeated
Go out power and be transferred to next stage module in maximum efficiency, the embodiment of the present invention is using drain electrode inductance LD2, metal-oxide-semiconductor M4Parasitic capacitance
And electric capacity CB3Output impedance is matched 50 Ω by the L-type matching network of composition.
By series capacitance C between first and second grade of amplifying circuitB2, separate influencing each other for two-stage circuit direct current biasing, and
Series capacitance CB2With inductance LD1, metal-oxide-semiconductor M2Gate leakage capacitance Cgd2And metal-oxide-semiconductor M3Gate-source capacitance Cgs3Composition interstage matched net
Network, realizes interstage matched.
Because the grid voltage of first and second grade of amplifying circuit input pipe is provided by active bias circuit, therefore below only to the first order
The biasing circuit of amplifying circuit is analyzed.Metal-oxide-semiconductor M of the biasing circuit using diode connection5With resistance R1Series connection point
Pressure, using resistance connection biasing circuit and the metal-oxide-semiconductor M of up to 5K Ω1Grid level, give metal-oxide-semiconductor M1Suitable bias voltage is provided.
High value resistor R2Can effectively prevent input radio frequency signal from entering biasing circuit, affect offset capability, while reducing biasing circuit pair
The contribution of overall noise coefficient.
In order to reduce biasing circuit power consumption, metal-oxide-semiconductor M5Size as little as possible should be selected.
Further, to prevent the impact of high-frequency noise and non-ideal power supply to main circuit performance, in metal-oxide-semiconductor M5Source,
One big decoupling capacitor C of parallel connection between drain electrode5。
In sum, the low-noise amplifier of embodiment of the present invention design can be used for the D frequency ranges and E frequency of TD-LTE system
Section.The centre frequency of the low-noise amplifier is 2.4GHz, can obtain low noise coefficient and high gain simultaneously.
To the model of each device in addition to specified otherwise is done, the model of other devices is not limited the embodiment of the present invention,
As long as the device of above-mentioned functions can be completed.
Embodiment 3
The embodiment of the present invention using 0.18 μm of CMOS technology of UMC to designed low-noise amplifier be optimized design and
Layout drawing.Under Cadance environment, the parasitic parameter in domain is extracted using Calibre softwares, version is carried out with Spectre
Figure post-simulation, simulation result is as Figure 4-Figure 6.
Fig. 4 gives S parameter simulation result.As seen from the figure, the three dB bandwidth of the low-noise amplifier is 2.1GHz-
2.7GHz, S21It is 21.5dB at 2.4GHz to obtain maximum, illustrates that circuit designed by the embodiment of the present invention has sufficiently large
Gain.S11<- 11dB and S22<- 11dB, shows that the input and output end of circuit designed by the embodiment of the present invention are realized well
Impedance matching, with good reflecting properties.
Fig. 5 gives noise coefficient NF simulation results.In 2.1GHz-2.7GHz frequency ranges, noise coefficient NF<2dB, and become
Change amount only has 0.02dB, illustrates that amplifier designed by the embodiment of the present invention is obtained in that extremely low noise.
Fig. 6 gives the stability analysis curve of low-noise amplifier.As seen from the figure, it is in whole working frequency range, stable
Property coefficient Kf>1, i.e., designed low-noise amplifier is in absolute stability state.
In sum, the embodiment of the present invention adopts 0.18 μm of CMOS technology of UMC, devises and a can be used for TD-LTE systems
The low-noise amplifier of system D frequency ranges (2570～2620MHz) and E frequency ranges (2300-2400MHz).Two-stage cascade structure is employed,
Low-noise amplifier is made while noise resistance and input resistant matching is realized, low noise coefficient and high increasing is obtained
Benefit.Low-noise amplifier described in the embodiment of the present invention can meet TD-LTE system D frequency range well and the application of E frequency ranges will
Ask.
It will be appreciated by those skilled in the art that accompanying drawing is the schematic diagram of a preferred embodiment, the embodiments of the present invention
Sequence number is for illustration only, does not represent the quality of embodiment.
The foregoing is only presently preferred embodiments of the present invention, not to limit the present invention, all spirit in the present invention and
Within principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (6)
1. a kind of high-gain CMOS low-noise amplifier for TD-LTE, the low-noise amplifier is fully integrated two-stage level
It is coupled structure, it is characterised in that the low-noise amplifier includes：First order amplifying circuit, second level amplifying circuit, also including level
Between matching unit and biasing circuit；
Source inductive feedback type cascode structure of the first order amplifying circuit using shunt capacitance, electricity is amplified in the second level
Cascode structure of the road using inductor peaking；
Wherein, after single-ended radio frequency signal first order amplifying circuit described in is realized input matching and amplified, by between the level
The second level amplifying circuit is sent into unit, secondary amplification and output matching is completed, is finally exported radiofrequency signal.
2. a kind of high-gain CMOS low-noise amplifier for TD-LTE according to claim 1, it is characterised in that institute
Stating first order amplifying circuit includes：Input pipe M1, inductance LS, inductance LG, shunt capacitance Ct, amplifier tube M2And inductance LD1, it is used for
The noise resistance in bandwidth of operation and input impedance are realized while matching.
3. a kind of high-gain CMOS low-noise amplifier for TD-LTE according to claim 1, it is characterised in that institute
The cascode structure that second level amplifying circuit employs inductor peaking is stated, including：Input pipe M3, amplifier tube M4, inductance LD2With
Electric capacity CB2, for improving the entire gain and reverse isolation degree of low-noise amplifier.
4. a kind of high-gain CMOS low-noise amplifier for TD-LTE according to claim 1, it is characterised in that adopt
The interstage matched of first and second grade of amplifying circuit is realized with capacitive coupling.
5. a kind of high-gain CMOS low-noise amplifier for TD-LTE according to claim 1, it is characterised in that institute
Biasing circuit is stated by the way of the metal-oxide-semiconductor that diode connects is in series with a resistor, direct current biasing is provided for two-stage amplifying circuit.
6. a kind of high-gain CMOS low-noise amplifier for TD-LTE according to claim 1, it is characterised in that institute
Low-noise amplifier is stated using the silicon base CMOS technique compatible with digital processing element, first order amplifying circuit, the second level is realized
It is integrated on the piece of amplifying circuit, interstage matched unit and biasing circuit.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107508562A (en) * | 2017-07-21 | 2017-12-22 | 天津大学 | L-band wideband low noise amplifier for Global electrical circuiti |
| CN107733375A (en) * | 2017-11-03 | 2018-02-23 | 西安电子科技大学 | Ultra-wideband low-noise amplifier |
| CN107994872A (en) * | 2017-11-07 | 2018-05-04 | 天津大学 | Big Dipper ground receiver high-gain broadband CMOS low-noise amplifiers |
| CN108563881A (en) * | 2018-04-20 | 2018-09-21 | 重庆邮电大学 | A kind of high-gain V-band power amplifier based on genetic algorithm optimization |
| CN111384984A (en) * | 2018-12-31 | 2020-07-07 | 华为技术有限公司 | Receiver and low noise amplifier |
| CN111504347A (en) * | 2020-04-28 | 2020-08-07 | 中国电子科技集团公司第二十八研究所 | Low-noise signal detection system |
| CN113676145A (en) * | 2021-07-27 | 2021-11-19 | 电子科技大学 | Broadband low-noise amplifier with reconfigurable frequency band |
| CN114793094A (en) * | 2022-06-20 | 2022-07-26 | 华南理工大学 | Adjustable gain low noise amplifier and receiver |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020084855A1 (en) * | 2000-12-28 | 2002-07-04 | Kwon Ick Jin | Low power low noise amplifier |
| CN101282110A (en) * | 2008-04-25 | 2008-10-08 | 北京大学 | Low-power consumption single-ended input difference output low-noise amplifier |
| CN102361435A (en) * | 2011-10-28 | 2012-02-22 | 电子科技大学 | Variable gain broadband low-noise amplifier |
| CN103051291A (en) * | 2012-12-31 | 2013-04-17 | 中国科学院上海微系统与信息技术研究所 | Stage-matching-adjustable CMOS (complementary metal oxide semiconductor) ultra-wideband low-noise amplifier circuit |
| CN103117710A (en) * | 2012-12-27 | 2013-05-22 | 中国矿业大学 | Differential type low-noise parallel multifrequency amplifier |
-
2016
- 2016-10-26 CN CN201610973417.5A patent/CN106533367A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020084855A1 (en) * | 2000-12-28 | 2002-07-04 | Kwon Ick Jin | Low power low noise amplifier |
| CN101282110A (en) * | 2008-04-25 | 2008-10-08 | 北京大学 | Low-power consumption single-ended input difference output low-noise amplifier |
| CN102361435A (en) * | 2011-10-28 | 2012-02-22 | 电子科技大学 | Variable gain broadband low-noise amplifier |
| CN103117710A (en) * | 2012-12-27 | 2013-05-22 | 中国矿业大学 | Differential type low-noise parallel multifrequency amplifier |
| CN103051291A (en) * | 2012-12-31 | 2013-04-17 | 中国科学院上海微系统与信息技术研究所 | Stage-matching-adjustable CMOS (complementary metal oxide semiconductor) ultra-wideband low-noise amplifier circuit |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107508562A (en) * | 2017-07-21 | 2017-12-22 | 天津大学 | L-band wideband low noise amplifier for Global electrical circuiti |
| CN107733375B (en) * | 2017-11-03 | 2020-08-11 | 西安电子科技大学 | Ultra-wideband low-noise amplifier |
| CN107733375A (en) * | 2017-11-03 | 2018-02-23 | 西安电子科技大学 | Ultra-wideband low-noise amplifier |
| CN107994872A (en) * | 2017-11-07 | 2018-05-04 | 天津大学 | Big Dipper ground receiver high-gain broadband CMOS low-noise amplifiers |
| CN108563881A (en) * | 2018-04-20 | 2018-09-21 | 重庆邮电大学 | A kind of high-gain V-band power amplifier based on genetic algorithm optimization |
| CN111384984A (en) * | 2018-12-31 | 2020-07-07 | 华为技术有限公司 | Receiver and low noise amplifier |
| CN111384984B (en) * | 2018-12-31 | 2021-06-29 | 华为技术有限公司 | Receiver and low noise amplifier |
| CN111504347A (en) * | 2020-04-28 | 2020-08-07 | 中国电子科技集团公司第二十八研究所 | Low-noise signal detection system |
| CN111504347B (en) * | 2020-04-28 | 2021-12-17 | 中国电子科技集团公司第二十八研究所 | Low-noise signal detection system |
| CN113676145A (en) * | 2021-07-27 | 2021-11-19 | 电子科技大学 | Broadband low-noise amplifier with reconfigurable frequency band |
| CN113676145B (en) * | 2021-07-27 | 2023-07-21 | 电子科技大学 | Broadband low-noise amplifier with reconfigurable frequency band |
| CN114793094A (en) * | 2022-06-20 | 2022-07-26 | 华南理工大学 | Adjustable gain low noise amplifier and receiver |
| CN114793094B (en) * | 2022-06-20 | 2022-10-25 | 华南理工大学 | Adjustable gain low noise amplifier and receiver |
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