CN113676145B - Broadband low-noise amplifier with reconfigurable frequency band - Google Patents

Broadband low-noise amplifier with reconfigurable frequency band Download PDF

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CN113676145B
CN113676145B CN202110850197.8A CN202110850197A CN113676145B CN 113676145 B CN113676145 B CN 113676145B CN 202110850197 A CN202110850197 A CN 202110850197A CN 113676145 B CN113676145 B CN 113676145B
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frequency band
broadband
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low
signal
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CN113676145A (en
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王勇
陈满健
王振宇
杨涛
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The invention provides a broadband low-noise amplifier with a reconfigurable frequency band, and belongs to the technical field of radio frequency integrated circuits. The amplifier divides a broadband signal into two frequency band signals through the coupling line structure, so that the circuit can optimally design the performances of noise, gain and the like of each section of signal, and the frequency is reconfigurable through single-pole double-throw switch switching, and the amplifier has the advantages of low noise, high gain and broadband reconfigurability. Meanwhile, the invention improves the flexibility of circuit design, is more beneficial to miniaturization and integration of a communication system, is easy to realize and has good practical value.

Description

Broadband low-noise amplifier with reconfigurable frequency band
Technical Field
The invention belongs to the technical field of radio frequency integrated circuits, and particularly relates to a broadband low-noise amplifier with a reconfigurable frequency band.
Background
At present, wireless communication technology rapidly develops, and industries such as mobile phones, wireless local area networks, internet of things, digital high-definition televisions and the like bring great changes to daily life modes of people and simultaneously bring higher requirements to radio frequency chip design technology. Many application devices have increasingly high integration of functionality, and a system often integrates multiple functional subsystems. Taking a civil mobile phone as an example, the system integrates functions of GSM, W-CDMA, 5G, WIFI, bluetooth, navigation and the like. Each sub-functional system at the front end of the receiver of the traditional multifunctional integrated equipment works as a single link, and a large number of common modules such as a low-noise amplifier, a power amplifier and the like are reused (sub-functional systems with different frequency bands corresponding to different applications), so that the volume and the cost of the equipment are greatly improved, and meanwhile, the reliability and the maneuverability are obviously reduced.
To solve the problem of multiple low noise amplifiers in a multifunctional integrated device receiver, researchers have turned to ultra wideband low noise amplifiers that can cover more network formats. An ideal low noise amplifier has low noise, high gain and good input-output matching in a desired frequency band, but the optimal noise matching to achieve low noise and the conjugate matching to achieve high gain cannot be satisfied at the same time, and matching can only be performed over a relatively narrow bandwidth, so that some special structures are often required for the design of an ultra wideband low noise amplifier.
Currently, the ultra wideband low noise amplifier has been proposed to have a structure of a balanced amplifier, a distributed amplifier, and a parallel-series feedback amplifier. The balanced amplifier can work in the optimal noise or maximum gain state, but has the problems of large circuit size and high power consumption due to the need of two mixing networks and two separate amplifiers; the bandwidth of the distributed amplifier is very wide, and the cut-off frequency of the transistor can be realized theoretically, but the chip area is large and the power consumption is high due to the fact that a plurality of spiral inductors or transmission lines are used; the parallel-series feedback structure can provide good wideband matching and gain over the entire wideband, but it is difficult to satisfy the balance between noise and gain.
Therefore, it is necessary to design a band reconfigurable low noise amplifier with bandwidth adjusting function, low noise, high gain, and wide band combination.
Disclosure of Invention
In view of the problems existing in the background art, an object of the present invention is to provide a wideband low noise amplifier with reconfigurable frequency band. The amplifier divides a broadband signal into two frequency band signals through the coupling end and the direct-current end of the coupling line structure of the termination inductance and the termination capacitance, and the frequency band selection is carried out through the single-pole double-throw switch, so that the frequency band can be reconstructed, and the performances of noise coefficient, gain and the like in the frequency band are all in the optimal state.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a broadband low noise amplifier with a reconfigurable frequency band comprises a broadband low noise amplifying stage, a coupling line, a through end termination inductor, a through end termination capacitor, an isolation end termination capacitor, a high frequency band amplifying stage and a single-pole double-throw switch;
the output end of the broadband low-noise amplification stage is connected with the input end of the coupling line, the through end of the coupling line is connected with the first rotating end of the single-pole double-throw switch, one end of the through end is connected with the inductor, one end of the through end is connected with the capacitor, the coupling end of the coupling line is connected with the input end of the high-frequency band amplification stage, the output end of the high-frequency band amplification stage is connected with the second rotating end of the single-pole double-throw switch, the isolation end of the coupling line is connected with one end of the isolation end connected with the capacitor, the other ends of the through end connected with the inductor, the through end connected with the capacitor and the isolation end connected with the capacitor are grounded, the input end of the broadband low-noise amplification stage is used as the input end of the frequency band reconfigurable broadband low-noise amplifier, and the fixed end of the single-pole double-throw switch is used as the output end of the frequency band reconfigurable broadband low-noise amplifier;
the broadband low noise amplifying stage is used for amplifying the input broadband signal and inputting the broadband signal to the input end of the coupling line, the coupling end and the through end of the coupling line divide the amplified input broadband signal into a high-frequency band signal and a low-frequency band signal,
and the high-frequency band signal is amplified by the high-frequency band amplifying stage and then is selectively output with the low-frequency band signal through the single-pole double-throw switch.
Furthermore, the broadband low-noise amplification stage is mainly used for low-noise amplification of an input broadband signal, and is characterized by very low noise, and gain fluctuation of the broadband low-noise amplification stage can be reduced in a mode of compensating a post-stage amplifier.
Further, the broadband low-noise amplification stage consists of two inductive peaking cascode structure sub-amplification stages based on resistance negative feedback and inductive negative feedback, wherein the single inductive peaking cascode structure sub-amplification stage comprises a common-gate transistor, a common-source transistor, an inductor, a capacitor and a resistor; the grid electrode of the common grid electrode transistor is connected with a grid electrode inductor, an intermediate inductor is connected between the source electrode of the common grid electrode transistor and the drain electrode of the common source electrode transistor, a load inductor is connected between the drain electrode of the common grid electrode transistor and the power supply, and the drain electrode of the common grid electrode transistor and the grid electrode of the common source electrode transistor are connected through a negative feedback network formed by serially connecting resistors and capacitors.
Furthermore, the coupling line, the direct-through end termination inductor and the direct-through end termination capacitor form frequency band coupling, and the frequency of signals passing through the direct-through port and the coupling port is determined by adjusting the length, the width, the line spacing, the termination inductor and the termination capacitor, so that frequency band reconstruction is realized.
Furthermore, the high-frequency band amplifying stage is mainly used for improving the gain of the high-frequency band signal, compensating gain attenuation caused by coupling of the broadband signal through the coupling line, and reducing in-band gain fluctuation.
Furthermore, the high-frequency band amplifying stage comprises two sub amplifying stage structures, the first sub amplifying stage is identical to the sub amplifying stage of the broadband low-noise amplifying stage and is of an inductive peaking common-source common-gate structure based on resistance negative feedback and inductive negative feedback, the second sub amplifying stage is of a common-source amplifying structure, a load inductor is connected between a drain electrode and a power supply of a common-source transistor, a negative feedback network formed by connecting a resistor and a capacitor in series is connected between the drain electrode and a grid electrode, and the source electrode is connected to the ground.
Furthermore, if the gain of the low-frequency signal obtained by amplifying the signal through the broadband low-noise amplifying stage and then passing through the coupling line through end is smaller than that of the high-frequency signal, the low-frequency amplifying stage can be arranged between the first rotating end of the single-pole double-throw switch and the coupling line through end so as to reduce in-band gain fluctuation.
Further, the low-band amplifying stage may employ the same circuit configuration as the high-band amplifying stage.
Further, the single pole double throw switch is preferably formed by connecting 4 switching transistors and a matching inductance, but is not limited to this structure.
The mechanism of the invention is as follows: the broadband signal amplified by the broadband low-noise amplifying stage is divided into two frequency band signals by the coupling end and the through end of the coupling line structure by utilizing the coupling line structure comprising the terminating inductor and the terminating capacitor, the two frequency band signals are respectively connected to a single-pole double-throw switch for output after being amplified by a rear gain stage, and the switching of the high-frequency band signal output and the low-frequency band signal output is realized by the switch, so that the reconstruction of the low-noise amplifying frequency band is realized. In addition, the invention utilizes the high isolation characteristic of the single-pole double-throw switch, avoids the direct interference of signals of two frequency bands, improves the stability of the amplifier, and ensures that the performances of noise coefficient, gain, stability and the like in the reconstructed frequency band are in the optimal state.
In summary, due to the adoption of the technical scheme, the beneficial effects of the invention are as follows:
the broadband low-noise amplifier with the reconfigurable frequency band provided by the invention divides the broadband signal into two frequency band signals through the coupling line structure, so that the circuit can be optimally designed according to the performances of noise, gain and the like of each section of signal, such as gain improvement, gain fluctuation reduction and the like, and the frequency reconfiguration is realized through single-pole double-throw switch switching, and the broadband low-noise high-gain broadband low-noise amplifier has the advantages of low noise, high gain and broadband reconfiguration. Meanwhile, the invention improves the flexibility of circuit design, is more beneficial to miniaturization and integration of a communication system, is easy to realize and has good practical value.
Drawings
Fig. 1 is a schematic diagram of a wideband low noise amplifier architecture with band reconfigurable according to embodiment 1 of the present invention.
Fig. 2 is a circuit implementation structure diagram of a wideband low noise amplifier with reconfigurable frequency band according to embodiment 1 of the present invention.
Fig. 3 is a schematic diagram of a wideband low noise amplifier architecture with band reconfigurable according to embodiment 2 of the present invention.
Fig. 4 is a noise performance diagram of a wideband low noise amplifier with band reconfigurable according to embodiment 1 of the present invention.
Fig. 5 is a gain performance diagram of a wideband low noise amplifier with band reconfigurable according to embodiment 1 of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the embodiments and the accompanying drawings, for the purpose of making the objects, technical solutions and advantages of the present invention more apparent.
Example 1
The architecture diagram of the broadband low-noise amplifier with the reconfigurable frequency band is shown in figure 1, and the broadband low-noise amplifier comprises a broadband low-noise amplifying stage, a coupling line, a through end termination inductor, a through end termination capacitor, an isolation end termination capacitor, a high-frequency band amplifying stage and a single-pole double-throw switch; the output end of the broadband low noise amplification stage is connected with the input end 1 of the coupling line, the through end 2 of the coupling line is connected with the first rotating end of the single pole double throw switch, one end of the through end termination inductance Lc and one end of the through end termination capacitance Cc1, the coupling end 4 of the coupling line is connected with the input end of the high frequency band amplifier, the output end of the high frequency band amplifier is connected with the second rotating end of the single pole double throw switch, the isolation end 3 of the coupling line is connected with one end of the isolation end termination capacitance Cc2, the other ends of the coupling line termination inductance, the coupling line termination capacitance and the isolation end termination capacitance are all grounded, the input end of the broadband low noise amplification stage is used as the input end of the broadband low noise amplifier, and the fixed end of the single pole double throw switch is used as the output end of the broadband low noise amplifier.
The broadband low-noise amplifying stage is a first-stage amplifier and is responsible for amplifying an input broadband signal with low noise, and the broadband low-noise amplifying stage has the characteristics of very low noise and certain gain, and the gain fluctuation can be reduced in a mode of compensating a later-stage amplifier. The direct port 2 of the coupling line is connected with a termination inductor Lc and a termination capacitor Cc1 and mainly used for transmitting low-frequency signals; the coupling end 4 mainly routes the coupled high-frequency band signals; the high-frequency end amplifying stage is a high-frequency end second amplifying stage and is used for mainly amplifying the coupled high-frequency signals, and amplifying the gain of the high-frequency band to be approximately the same as the gain of the low-frequency band; the single pole double throw switch connects the high frequency band signal and the low frequency band signal and the signal output port.
The circuit structure diagram of the embodiment is shown in fig. 2, and the broadband low-noise amplifier with the reconfigurable frequency band comprises a broadband low-noise amplifying stage, a coupling line termination inductor, a coupling line termination capacitor, a high-frequency band amplifier and a single-pole double-throw switch;
the broadband low-noise amplification stage comprises two sub-amplification stages with the same structure, and each sub-amplification stage adopts an inductive peaking cascode structure based on resistance negative feedback and inductive negative feedback; the first sub-amplifying stage comprises transistors M1 and M2, a gate inductance Lg1, a source degeneration inductance Ls1, a source-drain intermediate inductance L1, a drain inductance Ld1, a feedback resistance Rf1, gate resistances Rg1 and Rg2 and blocking capacitors Cf1 and C1; the second sub-amplifying stage is composed of transistors M3 and M4, a gate inductance Lg2, a source degeneration inductance Ls2, a source-drain intermediate inductance L2, a drain inductance Ld2, a feedback resistance Rf2, gate resistances Rg3 and Rg4, and blocking capacitors Cf2 and C2, and the overall structure is the same as that of the first sub-stage.
The gate of the first transistor M1 in the first sub-amplifying stage is connected to one end of the inductance Lg1, one end of the capacitance Cf1 and one end of the resistance Rg1, the drain is connected to one end of the inductance L1, the source is connected to one end of the inductance Ls1, the source of the second transistor M2 is connected to the other end of the inductance L1, the gate is connected to one end of the resistance Rg2, and the drain is connected to one end of the inductance Ld1, one end of the resistance Rf1 and one end of the capacitance C1; the other end of the inductor Lg1 is used as an input end of a broadband input signal, the other end of the resistor Rg1 is connected with the first bias voltage Vbias1, and the other end of the resistor Rg2 is connected with the second bias voltage Vbias2; the other end of the inductor Ld1 is connected with a power supply Vdd1, the other end of the inductor Ls1 is grounded, and the other end of the capacitor C1 is connected with one end of an inductor Lg2 in the second sub-amplifying stage;
the gate of the third transistor M3 in the second sub-amplifying stage is connected to the other end of the inductance Lg2, one end of the capacitance Cf2 and one end of the resistance Rg3, the drain is connected to one end of the inductance L2, the source is connected to one end of the inductance Ls2, the source of the fourth transistor M4 is connected to the other end of the inductance L2, the gate is connected to one end of the resistance Rg4, and the drain is connected to one end of the inductance Ld2, one end of the resistance Rf2 and one end of the capacitance C2; the other end of the resistor Rg3 is connected with the first bias voltage Vbias1, and the other end of the resistor Rg4 is connected with the second bias voltage Vbias2; the other end of the inductor Ld2 is connected with a power supply Vdd1, the other end of the inductor Ls2 is grounded, and the other end of the capacitor C1 is connected with the input end 1 of the coupling line.
Transistors M1 and M2 in the first sub-amplification stage and inductors L1 and Ld1 form an inductive peaking cascode structure so as to ensure that the broadband low-noise amplification stage has a certain gain; the negative feedback network formed by the resistor Rf1 and the capacitor Cf1, the grid inductance Lg1 and the source degeneration inductance Ls1 form an input matching network together, so that radio frequency low noise input matching is completed; the grid resistances Rg1 and Rg2 are large resistances in kiloohm magnitude, so that signal leakage to the bias power supply end is prevented, and the capacitor C1 mainly acts as blocking and interstage matching. The connections and roles between the elements of the second sub-amplification stage are identical to those of the first sub-amplification stage.
The coupled line ports comprise four ports 1, 2, 3 and 4. The port 1 is a broadband signal input end and is connected with the output end (the other end of the capacitor C2) of the broadband low-noise amplifying stage; the port 2 is a through port, and is connected with one end of the inductor Lc, one end of the capacitor Cc1 and a first rotating end (drain end of the transistor M11) of the single-pole double-throw switch in a terminating manner, and mainly transmits low-frequency signals; the port 3 is connected with one end of the termination capacitor Cc2 and is an isolation port; the port 4 is a coupling end, and is mainly used for transmitting the coupled high-frequency band signal, and is connected with the input end (one end of the inductor Lg 3) of the high-frequency band amplifying stage.
The line width of the coupling line determines the size of parasitic capacitance Cp1 between the coupling line and the ground, and the line width is in direct proportion to Cp 1; the line spacing of the coupled lines determines the parasitic capacitance Cp2 between the coupled lines, the line spacing being inversely proportional to Cp 2. The coupling factor K of the coupled lines is related to Cp1 and Cp2 as follows:
the signal enters from the coupling line input end, most of the high-frequency signal can be coupled to the coupling end, the residual signal can flow out from the through end, and the residual signal can flow out from the coupling end in a very small part. The voltage transmission equation of the signal from the input terminal to the coupling terminal is:
where θ is the electrical length of the coupled line, is the ratio of the mechanical length (or geometric length) of the transmission line to the wavelength of the transmitted electromagnetic wave on the line, C is the coupling transmission coefficient, j is the imaginary unit, vin is the voltage signal input to the input terminal, and Vcoupled is the voltage signal flowing out from the coupling terminal. The voltage transmission equation of the signal from the input terminal to the through terminal is:
wherein T is a through transmission coefficient, vthrough is a voltage signal output from the through terminal. The voltage transmission equation from the input end to the coupling end and the through end is adjusted by adjusting the line width, the length and the line interval of the coupling line, so that the frequency range of signals flowing out from the coupling end and the through end is changed.
Since the reactance of the capacitor is inversely proportional to the frequency, the reactance of Cc1 and Cc2 is very small at high frequencies. After bypass capacitors Cc1 and Cc2 are respectively added to the through end and the isolation end of the coupling line, the through end and the isolation end of the coupling line are equivalent to short-circuited to ground at high frequency. At this time, a part of the high-frequency signal of the signal input end of the coupling line is coupled to the coupling port, and the remaining part of the high-frequency signal and the low-frequency signal flow into the through end. The high-frequency signal is reflected because the through end is short-circuited to the ground, the reflected high-frequency signal is coupled to the isolation end, and the high-frequency signal is reflected again because the isolation end is short-circuited to the capacitor, and finally flows out of the coupling section. As can be seen from the above procedure, the input signal can be divided into high frequency and low frequency signals by adding bypass capacitors at the through and isolation ends of the coupled lines to reflect the high frequency signals. Increasing the capacitance of Cc1 and Cc2, the boundary point between the high frequency and low frequency signals will shift to lower frequencies.
In summary, the line width, length, line interval and capacitance Cc1 and Cc2 of the coupling line are adjusted, so that the frequency range of the signals which enter through the 1 port and are directly connected and coupled out from the 2 port and the 4 port can be adjusted, and the frequency range reconstruction is realized.
The high-frequency band amplifying stage provides a certain gain for the high-frequency band signal, so that the gain of the high-frequency band after the signal passes through the high-frequency band amplifying stage is consistent with the gain of the low-frequency band, and the gain fluctuation between the high-frequency band amplifying stage and the low-frequency band signal is balanced and consists of two sub amplifying stages. The first sub-amplification stage consists of transistors M5, M6, inductances Lg3, ls3, L3, ld3, resistances Rf3, rg5, rg6 and a capacitance Cf3, and has the same overall structure as the first sub-amplification stage of the broadband low-noise amplification stage. The second sub-amplifying stage consists of a transistor M5, an inductor Ld4, a capacitor Cf4, resistors Rf4 and Rg7, wherein the resistor Rf4 and the capacitor Cf4 are in negative feedback network, and the load inductor Ld4 and the common source transistor M5 are combined to amplify the broadband signal.
A gate of the fifth transistor M5 in the first sub-amplifying stage is connected to one end of the inductor Lg3, one end of the capacitor Cf3 and one end of the resistor Rg5, a drain is connected to one end of the inductor L3, and a source is connected to one end of the inductor Ls 3; the source electrode of the sixth transistor M6 is connected to the other end of the inductor L3, the gate electrode is connected to one end of the resistor Rg5, and the drain electrode is connected to one end of the inductor Ld3, one end of the resistor Rf3, and one end of the capacitor C3; the other end of the inductor Lg3 is used as an input end of a high-frequency band signal, the other end of the resistor Rg5 is connected with the first bias voltage Vbias1, and the other end of the resistor Rg6 is connected with the second bias voltage Vbias2; the other end of the inductor Ld3 is connected with an input power supply Vdd1, the other end of the inductor Ls3 is grounded, and the other end of the capacitor C3 is connected with the grid electrode of a seventh transistor M7 in the second sub-amplifying stage;
the grid electrode of the seventh transistor M7 in the second sub-amplifying stage is connected with the other end of the capacitor C3, one end of the resistor Rg7 and one end of the capacitor Cf4 in the first sub-amplifying stage, the source electrode is grounded, the drain electrode is connected with one end of the capacitor C4, one end of the resistor Rf4 and one end of the inductor Ld4, the other end of the resistor Rf4 is connected with the other end of the capacitor Cf4, the other end of the inductor Ld4 is connected with the power supply Vdd2, and the other end of the capacitor C4 is connected with the second rotating end of the single-pole double-throw switch.
The low-frequency band signal from the direct connection of the port of the coupling line 2 has higher gain compared with the high-frequency band signal coupled by the port 4, so that a low-frequency band amplifying stage is not arranged, and the signal is directly connected with the first rotating end of the single-pole double-throw switch.
The two rotating ends of the single-pole double-throw switch are respectively connected with the output end (the other end of the capacitor C4) of the high-frequency-band amplifying stage and the direct-current end 2 of the coupling line, and the single-pole double-throw switch consists of four transistors M8, M9, M10 and M11, a matching inductor L4, grid resistors Rg8, rg9, rg10 and Rg 11. The grid electrode of the eighth transistor M8 is connected with one end of a grid electrode resistor Rg8, the source electrode is connected with the other end of the capacitor C4 and the source electrode of the tenth transistor M10, and the drain electrode is grounded; the grid electrode of the ninth transistor M9 is connected with one end of a grid electrode resistor Rg9, the source electrode is grounded, and the drain electrode is connected with the through end 2 of the coupling line and the drain electrode of the eleventh transistor M11; a gate of the tenth transistor M10 is connected to one end of the gate resistor Rg10 and the other end of the gate resistor Rg9, and a drain is connected to one end of the matching inductance L4 and the source of the eleventh transistor M11; the gate of the eleventh transistor M11 is connected to the other end of the gate resistor Rg8 and one end of the gate resistor Rg11, the other end of the gate resistor Rg11 is connected to the voltage Vswith2, the other end of the gate resistor Rg10 is connected to the voltage Vswith1, and the other end of the matching inductance L4 is the output end of the wideband low noise amplifier.
The matching inductance L4 mainly plays a role in matching. When the Vswitch1 is set at high level and the Vswitch2 is set at low level, the branch circuit with the high frequency band is conducted, otherwise, the branch circuit with the low frequency band is conducted.
Example 2
If the gain of the low-frequency band signal amplified by the broadband low-noise amplifying stage and then passed through the direct-pass end of the coupling line is smaller than that of the high-frequency band signal, a low-frequency band amplifying stage can be added between the single-pole double-throw switch and the coupling line structure to reduce gain fluctuation, and the architecture diagram is shown in fig. 3.
The direct-pass end of the coupling line inputs the low-frequency-band signal into the low-frequency-band amplifying stage, the circuit structure of the low-frequency-band amplifying stage can be the same as that of the high-frequency-band amplifying stage, and the high-frequency-band signal output by the high-frequency-band amplifying stage of the low-frequency-band signal amplified and output by the low-frequency-band amplifying stage is output through single-pole double-throw switch selection.
Fig. 4 and fig. 5 are a reconstructed noise diagram and a reconstructed gain performance diagram, which are implemented by the circuit structure shown in fig. 2 based on GaAs technology in embodiment 1 of the present invention, the full frequency band implemented by the circuit is 2-18GHz, the bandwidth is 16GHz, and the reconstructed frequency bands are respectively 2-5GHz low frequency band and 5-18GHz high frequency band. In fig. 4, the dotted line is a noise curve of a low frequency band, the noise of 2-5GHz is 1dB, the solid line is a noise curve of a high frequency band, the noise of 5-18GHz is 1.1-1.2dB, and it can be seen from the figure that the noise in a wide frequency band range of 2-18GHz after reconstruction is 1-1.2dB, so that very excellent noise performance is realized. In FIG. 5, the broken line shows a gain curve of a low frequency band, a gain of 2-5GHz is 24-25dB, the solid line shows a gain curve of a high frequency band, a gain of 5-18GHz is 24-26dB, and the gain of the reconstructed structure in a wide frequency band range of 2-18GHz is 24-26dB, so that the reconstructed structure has the characteristics of high gain and good flatness. In general, the frequency band reconfigurable low-noise amplifier has the advantages of wide bandwidth, low noise, high gain, good gain flatness and good flexibility, and has good practical value.
While the invention has been described in terms of specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the equivalent or similar purpose, unless expressly stated otherwise; all of the features disclosed, or all of the steps in a method or process, except for mutually exclusive features and/or steps, may be combined in any manner.

Claims (8)

1. The broadband low-noise amplifier with the reconfigurable frequency band is characterized by comprising a broadband low-noise amplifying stage, a coupling line, a through end termination inductor, a through end termination capacitor, an isolation end termination capacitor, a high-frequency band amplifying stage and a single-pole double-throw switch;
the output end of the broadband low-noise amplification stage is connected with the input end of the coupling line, the through end of the coupling line is connected with the first rotating end of the single-pole double-throw switch, one end of the through end is connected with the inductor, one end of the through end is connected with the capacitor, the coupling end of the coupling line is connected with the input end of the high-frequency band amplification stage, the output end of the high-frequency band amplification stage is connected with the second rotating end of the single-pole double-throw switch, the isolation end of the coupling line is connected with one end of the isolation end connected with the capacitor, the other ends of the through end connected with the inductor, the through end connected with the capacitor and the isolation end connected with the capacitor are grounded, the input end of the broadband low-noise amplification stage is used as the input end of the frequency band reconfigurable broadband low-noise amplifier, and the fixed end of the single-pole double-throw switch is used as the output end of the frequency band reconfigurable broadband low-noise amplifier;
the broadband low-noise amplification stage is used for amplifying an input broadband signal and inputting the broadband signal to the input end of the coupling line, and the coupling end and the through end of the coupling line divide the amplified input broadband signal into a high-frequency band signal and a low-frequency band signal; the broadband low-noise amplification stage consists of two inductive peaking cascode structure sub-amplification stages based on resistance negative feedback and inductive negative feedback, wherein the single inductive peaking cascode structure sub-amplification stage comprises a common gate transistor, a common source transistor, an inductor, a capacitor and a resistor; the grid electrode of the common grid electrode transistor is connected with a grid electrode inductor, an intermediate inductor is connected between the source electrode of the common grid electrode transistor and the drain electrode of the common source electrode transistor, a load inductor is connected between the drain electrode of the common grid electrode transistor and a power supply, and the drain electrode of the common grid electrode transistor and the grid electrode of the common source electrode transistor are connected through a negative feedback network formed by serially connecting resistors and capacitors;
and the high-frequency band signal is amplified by the high-frequency band amplifying stage and then is selectively output with the low-frequency band signal through the single-pole double-throw switch.
2. The broadband low noise amplifier of claim 1, wherein the broadband low noise amplification stage is mainly used for low noise amplification of an input broadband signal, and gain fluctuation thereof is reduced by means of compensation of a post-stage amplification stage.
3. The broadband low noise amplifier of claim 1, wherein the coupled line, the through-terminal termination inductor and the through-terminal termination capacitor form band coupling, and the frequency of signals passing through the through-port and the coupled port is determined by adjusting the length, width, line spacing, and values of the termination inductor and the termination capacitor of the coupled line, so as to realize band reconstruction.
4. The broadband low noise amplifier of claim 1, wherein said high band amplification stage is configured to primarily increase gain of the high band signal while compensating for gain attenuation of the broadband signal due to coupling via the coupled line to reduce in-band gain fluctuations.
5. The broadband low noise amplifier according to claim 4, wherein the high frequency band amplifying stage comprises two sub amplifying stage structures, the first sub amplifying stage is identical to the sub amplifying stage of the broadband low noise amplifying stage and is an inductive peaking cascode structure based on resistance negative feedback and inductive negative feedback, the second sub amplifying stage is a common source amplifying structure, a load inductance is connected between a drain electrode and a power supply of the common source transistor, a negative feedback network formed by connecting a resistor and a capacitor in series is connected between the drain electrode and a grid electrode, and the source electrode is connected to the ground.
6. The broadband low noise amplifier of claim 1, wherein if the gain of the low frequency band signal obtained by amplifying the signal through the broadband low noise amplifier stage and then through the coupling line pass-through terminal is smaller than the gain of the high frequency band signal, the low frequency band amplifier stage is disposed between the first rotating terminal of the single pole double throw switch and the coupling line pass-through terminal to reduce in-band gain fluctuation.
7. The broadband low noise amplifier of claim 6, wherein said low band amplification stage employs the same circuit configuration as the high band amplification stage.
8. The broadband low noise amplifier of claim 1, wherein said single pole double throw switch comprises 4 switching transistors and a matching inductance.
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Publication number Priority date Publication date Assignee Title
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101621282A (en) * 2009-03-06 2010-01-06 电子科技大学 Millimeter-wave single-chip integrated low-noise amplifier (LNA)
CN105281675A (en) * 2015-11-20 2016-01-27 中国电子科技集团公司第三十八研究所 Down-conversion module with ultra-wide and large instantaneous bandwidth and frequency conversion method thereof
CN106533367A (en) * 2016-10-26 2017-03-22 天津大学 High-gain CMOS low-noise amplifier for TD-LTE (Time Division Long Term Evolution)
US9716475B1 (en) * 2016-01-21 2017-07-25 Peregrine Semiconductor Corporation Programmable low noise amplifier
CN111082831A (en) * 2019-12-30 2020-04-28 中国科学院电子学研究所 Satellite-borne synchronous transmitting and receiving device and signal processing method
CN111865221A (en) * 2020-08-18 2020-10-30 成都信息工程大学 Silicon-based millimeter wave receiving front-end circuit
CN112491438A (en) * 2020-10-30 2021-03-12 西安科锐盛创新科技有限公司 Radio frequency front end integrated chip
CN112583369A (en) * 2019-09-27 2021-03-30 天津大学 Dual-frequency millimeter wave low-noise amplifier

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI509985B (en) * 2013-08-15 2015-11-21 Univ Nat Chi Nan Ultra - Wideband Low Noise Low Power Loss Amplifier Circuit
CN114024512B (en) * 2021-10-11 2023-07-21 电子科技大学 Ultra-wideband low noise amplifier of frequency division duplex

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101621282A (en) * 2009-03-06 2010-01-06 电子科技大学 Millimeter-wave single-chip integrated low-noise amplifier (LNA)
CN105281675A (en) * 2015-11-20 2016-01-27 中国电子科技集团公司第三十八研究所 Down-conversion module with ultra-wide and large instantaneous bandwidth and frequency conversion method thereof
US9716475B1 (en) * 2016-01-21 2017-07-25 Peregrine Semiconductor Corporation Programmable low noise amplifier
CN106533367A (en) * 2016-10-26 2017-03-22 天津大学 High-gain CMOS low-noise amplifier for TD-LTE (Time Division Long Term Evolution)
CN112583369A (en) * 2019-09-27 2021-03-30 天津大学 Dual-frequency millimeter wave low-noise amplifier
CN111082831A (en) * 2019-12-30 2020-04-28 中国科学院电子学研究所 Satellite-borne synchronous transmitting and receiving device and signal processing method
CN111865221A (en) * 2020-08-18 2020-10-30 成都信息工程大学 Silicon-based millimeter wave receiving front-end circuit
CN112491438A (en) * 2020-10-30 2021-03-12 西安科锐盛创新科技有限公司 Radio frequency front end integrated chip

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
An X/Ku dual-band switch-free reconfigurable GaAs LNA MMIC based on coupled line;Xie C等;《IEEEAccess》(第8期);说明书第[0027]段，图1 *
宽带可重构低噪声放大器研究与设计;陈满健;《中国优秀硕士学位论文全文数据库信息科技辑》(第01期);I135-1119 *
超宽带CMOS低噪声放大器设计;高阳;《中国优秀硕士学位论文全文数据库信息科技辑》(第12期);I135-295 *

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